Luminescence and detection integrated device with multiple working modes and working and preparation method thereof

Abstract

The invention discloses a light-emitting detection integrated device with multiple working modes and a working method and a preparation method of the light-emitting detection integrated device. According to the invention, two thin film transistors (TFT) and a diode are integrated in a monolithic manner, so that a light-emitting detection integrated device capable of being used in multiple working modes is realized. The working methods of the device comprise a light emitting working method, a partial pressure detection working method, a light current detection working method, a photovoltaic detection working method and a multiband detection working method. The luminescence and detection integrated device provided by the invention has luminescence and photoelectric detection functions, and various working methods such as luminescence, photovoltaic detection, photocurrent detection, partial voltage detection and multi-band detection can be carried out by changing voltage application logic. Display equipment applying the device has the photoelectric detection capability, the integration level is increased, and available device scenes are increased.

Description

Technical Field

[0001] The present invention relates to the technical field of photosensitive detection, and particularly to an integrated device for light emission and detection with multiple working modes and its working and preparation methods. Background Art

[0002] Light-emitting devices and photodetector devices are important components in electronic and optical systems and are an indispensable part of many electronic devices. With the continuous in-depth research on optoelectronic materials, device structures, and preparation processes, the performance of current light-emitting devices and photodetector devices has been greatly improved.

[0003] With the continuous improvement of the requirements for device integration, discrete light-emitting devices and photodetectors cannot meet the design requirements in many scenarios. More integrated design requirements are put forward for light-emitting devices and photodetector devices, hoping that they can simultaneously meet the requirements of high integration, diverse functions, miniaturization, applicability to multiple scenarios, high performance, etc., and realize multi-functional light emission and detection. Summary of the Invention

[0004] In view of this, embodiments of the present invention provide an integrated device for light emission and detection with multiple working modes and its working and preparation methods.

[0005] In the first aspect of the present invention, there is provided an integrated device for light emission and detection with multiple working modes, including a substrate, a first insulating layer, a second insulating layer, a third insulating layer, a diode, a first semiconductor layer, a second semiconductor layer, and first electrode 111, second electrode 112, third electrode 120, fourth electrode 313, fifth electrode 211, sixth electrode 212, seventh electrode 311, and eighth electrode 312; wherein, the substrate, the first insulating layer, the second insulating layer, the third insulating layer, the second electrode 112, the diode, and the first electrode 111 are arranged in sequence from bottom to top; the third electrode 120 and the fourth electrode 313 are deposited on the second insulating layer; the fifth electrode 211, the sixth electrode 212, the seventh electrode 311, and the eighth electrode 312 and the first semiconductor layer and the second semiconductor layer are deposited on the first insulating layer; and the second electrode 112 establishes an electrical connection relationship with the third electrode 120 and the seventh electrode 311.

[0006] Further, the diode includes an electron transport layer, a photosensitive layer, and a hole transport layer arranged in sequence from top to bottom; the first electrode 111, the electron transport layer, the photosensitive layer, the hole transport layer, and the second electrode 112 form a photodiode.

[0007] Further, in the third electrode 120, the fifth electrode 211, the sixth electrode 212, and the first semiconductor layer, with the second insulating layer as the dielectric layer, the first semiconductor layer as the active layer, the fifth electrode 211 as the drain, the sixth electrode 212 as the source, and the third electrode 120 as the gate, a first TFT transistor is formed;

[0008] In the fourth electrode 313, the seventh electrode 311, the eighth electrode 312, and the second semiconductor layer, with the second insulating layer as the dielectric layer, the second semiconductor layer as the active layer, the seventh electrode 311 as the drain, the eighth electrode 312 as the source, and the fourth electrode 313 as the gate, a second TFT transistor is formed.

[0009] Further, the substrate is made of an insulating material; the first insulating layer, the second insulating layer, and the third insulating layer are made of an organic polymer, a metal oxide, or a non-metal oxide; the first semiconductor layer and the second semiconductor layer are made of an inorganic semiconductor, an organic semiconductor, or an organic-inorganic hybrid semiconductor; the electron transport layer and the hole transport layer are made of a conductive organic polymer, a conductive organic small molecule, a metal oxide, and an inorganic semiconductor material; the photosensitive layer is made of an organic light-emitting material, a quantum dot, and a nanocrystal material, an inorganic material, and an organic-inorganic hybrid material.

[0010] A second aspect of the present invention provides a light-emitting working method, which is applied to the multi-working-mode light-emitting detection integrated device described in the first aspect, and includes the following steps:

[0011] Apply a first voltage to the fourth electrode 313 to turn on the first TFT transistor;

[0012] When a first working voltage is applied to the first electrode 111 and the eighth electrode 312, the diode is in a light-emitting state, and at this time, the first TFT transistor is used as a capacitor;

[0013] When a first working voltage is applied to the first electrode 111 and a second voltage is applied to the eighth electrode 312, the diode is in a non-light-emitting state.

[0014] A third aspect of the present invention provides a voltage-dividing detection working method, which is applied to the light-emitting detection integrated device described in the first aspect, and includes the following steps:

[0015] Apply a second working voltage to the first electrode 111 and the eighth electrode 312, and apply a third working voltage to the fourth electrode 313 to cause a photovoltaic effect in the diode;

[0016] Apply a first working voltage to the fifth electrode 211 and the sixth electrode 212, and reflect the current ambient light information through the voltage division at the third electrode 120 terminal.

[0017] In the fourth aspect of the present invention, a method for detecting photocurrent is provided, which is applied to the integrated light-emitting and detecting device described in the first aspect, and includes the following steps:

[0018] Apply a third working voltage to the first electrode 111 and the eighth electrode 312, and apply a first voltage to the fourth electrode 313 to turn on the second TFT transistor;

[0019] The current value between the first electrode 111 and the eighth electrode 312 reflects the current ambient light information.

[0020] In the fifth aspect of the present invention, a method for detecting photovoltaic is provided, which is applied to the integrated light-emitting and detecting device described in the first aspect, and includes the following steps:

[0021] Apply a second voltage to the fourth electrode 313 to turn off the second TFT transistor;

[0022] Apply a fourth working voltage to the first electrode 111 to cause the diode to generate a photovoltaic effect;

[0023] When the second TFT transistor is turned off, the voltage at the third electrode 120 terminal and the working state of the first TFT transistor change with the ambient light information;

[0024] Apply a first working voltage to the fifth electrode 211 and the sixth electrode 212, and the current value between the fifth electrode 211 and the sixth electrode 212 reflects the current ambient light information.

[0025] In the sixth aspect of the present invention, a method for multi-band detection is provided, which is applied to the integrated light-emitting and detecting device described in the first aspect, and includes the following steps:

[0026] Array multiple of the integrated light-emitting and detecting devices to form a light-emitting array;

[0027] Use the light-emitting array to receive ambient light information, so that some of the integrated light-emitting and detecting devices emit light;

[0028] Use the integrated light-emitting and detecting devices that are not in the light-emitting mode for voltage division detection or photocurrent detection to obtain ambient light information.

[0029] In the seventh aspect of the present invention, a preparation method for the integrated light-emitting and detecting device is provided, which is used to prepare the integrated light-emitting and detecting device described in the first aspect, and includes the following steps:

[0030] Obtain a substrate and clean it to serve as the substrate of the integrated light-emitting and detecting device;

[0031] Deposit a first insulating layer by chemical vapor deposition;

[0032] Deposit a first semiconductor layer and a second semiconductor layer on the first insulating layer by magnetron sputtering;

[0033] Deposit a fifth electrode 211, a sixth electrode 212, a seventh electrode 311, and an eighth electrode 312 on the first semiconductor layer and the second semiconductor layer by magnetron sputtering and photolithography processes;

[0034] Deposit a second insulating layer by chemical vapor deposition;

[0035] Deposit a third electrode 120 and a fourth electrode 313 on the second insulating layer by magnetron sputtering and photolithography processes;

[0036] Spin-coat a third insulating layer by spin-coating and photolithography processes;

[0037] Deposit a second electrode 112 on the third insulating layer by magnetron sputtering and photolithography processes;

[0038] Spin-coat a hole transport layer and a photosensitive layer on the second electrode in sequence by spin-coating processes;

[0039] Deposit an electron transport layer and a first electrode 111 on the photosensitive layer in sequence by thermal evaporation.

[0040] An embodiment of the present invention also discloses a computer program product or a computer program. The computer program product or the computer program includes computer instructions, and the computer instructions are stored in a computer-readable storage medium. A processor of a computer device can read the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions, so that the computer device executes the foregoing method.

[0041] The embodiments of the present invention have the following beneficial effects: The integrated light-emitting and detecting device provided by the present invention has both light-emitting and optoelectronic detecting functions; under different working methods, multi-mode switching between light-emitting and photovoltaic, photocurrent, voltage division detection, and multi-band detection can be performed by changing the voltage application logic. The display device applying the integrated light-emitting and detecting device provided by the present invention has the ability of optoelectronic detection, which is beneficial to increasing the integration degree and increasing the available device scenarios.

[0042] Additional aspects and advantages of the present invention will be given in the following description part, some will become obvious from the following description, or be learned through the practice of the present invention. Description of the Drawings

[0043] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0044] Figure 1 It is a schematic physical structure diagram of the integrated light-emitting and detecting device of the present invention.

[0045] Figure 2 It is a schematic circuit structure diagram of the integrated light-emitting and detecting device of the present invention.

[0046] Figure 3 It is a schematic equivalent circuit structure diagram of the integrated light-emitting and detecting device in the light-emitting working method of the present invention.

[0047] Figure 4 It is a schematic equivalent circuit structure diagram of the integrated light-emitting and detecting device in the voltage-dividing detection working method of the present invention.

[0048] Figure 5 It is a schematic equivalent circuit structure diagram of the integrated light-emitting and detecting device in the photocurrent detection working method of the present invention.

[0049] Figure 6 It is a schematic equivalent circuit structure diagram of the integrated light-emitting and detecting device in the photovoltaic detection working method of the present invention.

[0050] Figure 7 It is a schematic equivalent circuit structure diagram of a single integrated light-emitting and detecting device in the multi-band detection working method of the present invention.

[0051] Figure 8 It is a schematic structure diagram of a multi-band detection array composed of multiple integrated light-emitting and detecting devices in the multi-band detection working method of the present invention.

[0052] Figure 9 It is a specific preparation structure example of the integrated light-emitting and detecting device of the present invention. Detailed implementation manners

[0053] In order to make the objectives, technical solutions and advantages of the present application more clear and understandable, the following further details the present application in combination with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0054] As Figure 1As shown in the figure, the first embodiment of the present invention provides an integrated light-emitting and detecting device with multiple working modes, which includes a substrate, a first insulating layer, a second insulating layer, a third insulating layer, a diode, a first semiconductor layer, a second semiconductor layer, and a first electrode 111, a second electrode 112, a third electrode 120, a fourth electrode 313, a fifth electrode 211, a sixth electrode 212, a seventh electrode 311, and an eighth electrode 312. Among them, the substrate, the first insulating layer, the second insulating layer, the third insulating layer, the second electrode 112, the diode, and the first electrode 111 are arranged in sequence from bottom to top. The third electrode 120 and the fourth electrode 313 are deposited on the second insulating layer. The fifth electrode 211, the sixth electrode 212, the seventh electrode 311, the eighth electrode 312, the first semiconductor layer, and the second semiconductor layer are deposited on the first insulating layer. The second electrode 112 establishes an electrical connection relationship with the third electrode 120 and the seventh electrode 311.

[0055] In the embodiment of the present invention, a top diode is formed by the first electrode 111, the diode, and the second electrode 112, and the remaining part forms a bottom transistor.

[0056] Specifically, in the embodiment of the present invention, the diode includes an electron transport layer, a photosensitive layer, and a hole transport layer arranged in sequence from top to bottom. The first electrode 111, the electron transport layer, the photosensitive layer, the hole transport layer, and the second electrode 112 form a photodiode. In the embodiment of the present invention, the photodiode can simultaneously realize the functions of light emission and absorption. In the light-emitting function, under the electric field action of the top electrode and the bottom electrode, electrons and holes are injected from both ends of the electrode. After being transported through the transport layer with appropriate energy levels, they enter the photosensitive layer to recombine and generate photons for light emission. In the light absorption function, the photodiode absorbs the incident photons through the photosensitive layer and forms electron-hole pairs. Under the action of the electric field, the electron-hole pairs are separated and transported to both electrodes to form a photocurrent.

[0057] On the other hand, in the bottom transistor structure, two TFT transistors are integrated in the embodiment of the present invention. Specifically, in the third electrode 120, the fifth electrode 211, the sixth electrode 212, and the first semiconductor layer, with the second insulating layer as the dielectric layer, the first semiconductor layer as the active layer, the fifth electrode 211 as the drain, the sixth electrode 212 as the source, and the third electrode 120 as the gate, a first TFT transistor is formed. In the fourth electrode 313, the seventh electrode 311, the eighth electrode 312, and the second semiconductor layer, with the second insulating layer as the dielectric layer, the second semiconductor layer as the active layer, the seventh electrode 311 as the drain, the eighth electrode 312 as the source, and the fourth electrode 313 as the gate, a second TFT transistor is formed. Through the monolithic integration of the TFT transistor and the photodiode in the embodiment of the present invention, multi-working-mode light emission and detection can be achieved.

[0058] As a preferred embodiment, the first electrode 111, the second electrode 112, the third electrode 120, the fourth electrode 313, the fifth electrode 211, the sixth electrode 212, the seventh electrode 311, and the eighth electrode 312 of the present invention can be made of materials including ultra-thin metal films, patterned metal films, metal oxides, inorganic semiconductors such as silicon and group III-V compounds; and are formed into films by means such as spin coating, blade coating, drop coating, spraying, evaporation coating, magnetron sputtering, inkjet printing, and roll-to-roll printing. The embodiments of the present invention design an electrode structure with appropriate energy levels and low resistivity, so that the carriers in the transport layer can be smoothly extracted by the electrodes and will not be blocked by the energy levels. At the same time, the low resistivity ensures that the current can pass through the electrode material smoothly, reducing energy loss and heat generation, and improving the performance and lifespan of the integrated light-emitting and detecting device of the embodiments of the present invention.

[0059] As a preferred embodiment, the photosensitive layer of the present invention can be made of materials including organic light-emitting materials, quantum dots and nanocrystal materials, inorganic materials, and organic-inorganic hybrid materials; and are formed into films by means such as spin coating, blade coating, drop coating, spraying, evaporation coating, magnetron sputtering, inkjet printing, and roll-to-roll printing. The substrate is made of an insulating material, which can be a rigid inorganic substrate or a flexible organic substrate. The first insulating layer, the second insulating layer, and the third insulating layer can be made of materials including organic polymers, metal oxides, and non-metal oxides. The first semiconductor layer and the second semiconductor layer can be made of inorganic semiconductors, organic semiconductors, or organic-inorganic hybrid semiconductors; and are formed into films by means such as spin coating, blade coating, drop coating, spraying, sputtering, CVD, ALD, mechanical peeling and transfer, evaporation coating, inkjet printing, and roll-to-roll printing.

[0060] As a preferred embodiment, the electron transport layer and the hole transport layer of the present invention can be made of materials including conductive organic polymers, conductive organic small molecules, metal oxides, and inorganic semiconductor materials. Specifically, the materials used for the electron transport layer with electron transport functions have a linear or planar large conjugated system, such as TPBi, PCBM, BCP, etc.; the materials used for the hole transport layer with hole transport functions have a linear or planar large conjugated system, such as PEDOT:PSS, poly-TPD, PVK, etc. The photosensitive layer can be made of materials including organic light-emitting materials, quantum dots and nanocrystal materials, inorganic materials, and organic-inorganic hybrid materials; and are formed into films by means such as spin coating, blade coating, drop coating, spraying, sputtering, CVD, ALD, evaporation coating, inkjet printing, and roll-to-roll printing.

[0061] The circuit structure of the integrated light-emitting and detecting device of the embodiments of the present invention is as Figure 2As shown, since the embodiment of the present invention uses a photodiode that realizes the emission and absorption functions of light at the same time, and integrates two TFT transistors in the bottom transistor, the integrated luminescence detection device of the embodiment of the present invention has multiple working methods such as luminescence working method, voltage division detection working method, photocurrent detection working method, photovoltaic detection working method and multi-band detection working method. By applying different voltage logics to different electrodes, multi-mode switching between luminescence and photovoltaic, photocurrent, voltage division detection and multi-band detection can be realized.

[0062] The second embodiment of the present invention provides a light emitting working method, which is applied to the light emitting detection integrated device with multiple working modes in the first embodiment, and includes the following steps:

[0063] Applying a first voltage to the fourth electrode 313 turns on the first TFT transistor;

[0064] When the first working voltage is applied to the first electrode 111 and the eighth electrode 312, the diode is in a light-emitting state, and the first TFT transistor is used as a capacitor;

[0065] When the first working voltage is applied to the first electrode 111 and the second voltage is applied to the eighth electrode 312, the diode is in a non-luminous state.

[0066] The equivalent circuit of the device under the light-emitting working method is as follows Figure 3 As shown. The photodiode 110 is responsible for emitting light, and the TFT transistor 310 is responsible for controlling the light emission. When the fourth electrode 313 applies a first voltage to turn on the TFT transistor 310, a first operating voltage (the first operating voltage is not necessarily the same as the first voltage) is applied to the first electrode 111 and the eighth electrode 312 to put the photodiode 110 in a light-emitting state. When the fourth electrode 313 applies a second voltage to turn off the photodiode 310 or in a subthreshold state, the photodiode 110 is in a non-light-emitting state.

[0067] The third embodiment of the present invention provides a voltage division detection working method, which is applied to the integrated light emitting detection device of the first embodiment, and includes the following steps:

[0068] Applying a second operating voltage to the first electrode 111 and the eighth electrode 312, and applying a third operating voltage to the fourth electrode 313, so that the diode generates a photovoltage effect;

[0069] The first working voltage is applied to the fifth electrode 211 and the sixth electrode 212 , and the current ambient light information is reflected through the voltage division at the third electrode 120 .

[0070] The equivalent circuit of the device under the voltage division detection working method is as follows Figure 4As shown in the figure. A second operating voltage is applied to the first electrode 111 and the eighth electrode 312, and a third operating voltage is applied to the fourth electrode 313. The photodiode 110 functions as a photosensitive diode in this operating mode, and photoelectric detection is performed using the photovoltaic effect. At this time, the voltage at the third electrode 120 is obtained by dividing the voltage between the photodiode 110 and the TFT transistor 310; a first operating voltage is applied to the fifth electrode 211 and the sixth electrode 212, and the current ambient light information is reflected by the voltage division at the third electrode 120 terminal.

[0071] The fourth embodiment of the present invention provides a method for operating a photocurrent detection, which is applied to the integrated light emission detection device of the first embodiment, and includes the following steps:

[0072] A third operating voltage is applied to the first electrode 111 and the eighth electrode 312, and a first voltage is applied to the fourth electrode 313 to turn on the second TFT transistor;

[0073] The current ambient light information is reflected by the current value between the first electrode 111 and the eighth electrode 312.

[0074] The equivalent circuit of the device under the photocurrent detection operating method is as Figure 5 As shown in the figure. A third operating voltage is applied to the first electrode 111 and the eighth electrode 312, and a first voltage is applied to the fourth electrode 313 to keep the TFT transistor 310 in an open state. At this time, the current between the first electrode 111 and the eighth electrode 312 is measured, and the current ambient light information incident on the photodiode 110 is reflected by the measured current value.

[0075] The fifth embodiment of the present invention provides a method for operating a photovoltaic detection, which is applied to the integrated light emission detection device of the first embodiment, and includes the following steps:

[0076] A fourth operating voltage is applied to the first electrode 111 to cause the diode to generate a photovoltaic effect;

[0077] A second voltage is applied to the fourth electrode 313 to turn off the second TFT transistor;

[0078] When the second TFT transistor is turned off, the voltage at the third electrode 120 terminal and the operating state of the first TFT transistor change with the ambient light information;

[0079] A first operating voltage is applied to the fifth electrode 211 and the sixth electrode 212, and the current ambient light information is reflected by the current value between the fifth electrode 211 and the sixth electrode 212.

[0080] The equivalent circuit of the device under the photovoltaic detection operating method is as Figure 6As shown in the figure. Apply the fourth working voltage to the first electrode 111. At this time, when external light is incident on the photodiode 110, a photovoltaic effect will occur. Apply the second voltage to the fourth electrode 313 to turn off the photodiode 110. The voltage of the third electrode 120 changes with the ambient light intensity, which in turn causes a change in the switching state of the TFT transistor 210. Apply the first working voltage to the fifth electrode 211 and the sixth electrode 212. At this time, measure the current between the fifth electrode 211 and the sixth electrode 212. The current value obtained through measurement reflects the ambient light information of the current incident photodiode 110.

[0081] The sixth embodiment of the present invention provides a multi-band detection working method, which is applied to the light-emitting detection integrated device of the first embodiment, and includes the following steps:

[0082] Array multiple light-emitting detection integrated devices to form a light-emitting array;

[0083] Use the light-emitting array to receive ambient light information, so that some of the light-emitting detection integrated devices emit light;

[0084] Use the light-emitting detection integrated devices that are not in the light-emitting mode to perform voltage division detection or photocurrent detection to obtain ambient light information.

[0085] The equivalent circuit of a single device under the multi-band detection working method is as Figure 7 shown. Integrating multiple devices together can form a multi-band detection array as shown in Figure 8 shown. Among them, by scanning the rows (or columns) through the transmission lines 101 and 301, the incident light is converted into visible light to realize the pattern display of the light-emitting array. While the array realizes the pattern light emission display, select the modules that are not in the light-emitting mode, scan on the transmission lines 101 and 302 to generate the second working voltage, and apply the third working voltage on the 301 line to make the unlit photodiode 110 in the detection state. The whole module is in the voltage division detection mode. Apply the first working voltage on the transmission lines 201 and 202, and detect the current generated on the 202 transmission line by the current of the current module and the devices in the detection mode in the whole array, obtain the magnitude of the current passing through the current TFT transistor 210, and then the current ambient light information can be extracted.

[0086] The seventh embodiment of the present invention provides a preparation method for a light-emitting detection integrated device, which is used to prepare the light-emitting detection integrated device of the first embodiment, and includes the following steps:

[0087] Obtain a substrate and ultrasonically clean it successively with isopropyl alcohol, detergent, deionized water, and isopropyl alcohol, and then place it in an oven to dry it, as the substrate of the light-emitting detection integrated device. Before use, the glass substrate is cleaned in a plasma surface cleaner for 5 minutes.

[0088] Deposit SiO2 as the first insulating layer by plasma-enhanced chemical vapor deposition at 180 °C; for flat surfaces.

[0089] Deposit 40 nm of IGZO on the first insulating layer by magnetron sputtering as the first semiconductor layer and the second semiconductor layer; the sputtering gas is O2 and Ar.

[0090] Deposit 100 nm thick Mo on the first semiconductor layer and the second semiconductor layer by magnetron sputtering and photolithography processes as the fifth electrode 211, the sixth electrode 212, the seventh electrode 311, and the eighth electrode 312; the sputtering gas is Ar.

[0091] Deposit SiO2 as the second insulating layer by plasma-enhanced chemical vapor deposition at 180 °C; for transmitting the gate electric field.

[0092] Deposit 50 nm thick ITO on the second insulating layer by magnetron sputtering and photolithography processes as the third electrode 120 and the fourth electrode 313; the sputtering gas is Ar.

[0093] Spin-coat a 1 μm thick PI film on the device by spin-coating and photolithography processes as the third insulating layer; for flattening the device surface.

[0094] Deposit 50 nm thick ITO on the third insulating layer by magnetron sputtering and photolithography processes as the second electrode 112; the sputtering gas is Ar.

[0095] Ultrasonically clean the above device successively with isopropyl alcohol, detergent, deionized water, and isopropyl alcohol, and then place it in an oven to dry. Before use, the substrate is cleaned in a plasma surface cleaner for 5 minutes.

[0096] Obtain a PTAA thin film as the hole transport layer by spin-coating a PTAA solution (10 mg / mL, dissolved in CB) on the metal electrode Al. The spin-coating conditions are spin-coating at 4500 rpm for 30 seconds, and then annealing at 100 °C for 10 minutes in a nitrogen-protected glove box.

[0097] Obtain a perovskite layer solution as the photosensitive layer by spin-coating a 0.5 M (based on Pb2+) BA2MA2Pb3I10 solution dissolved in DMF. The spin-coating conditions are spin-coating at 6000 rpm for 30 seconds, and then annealing at 100 °C for 10 minutes.

[0098] Successively deposit C60 (20 nm) as the electron transport layer and Au (60 nm) as the first electrode 111 on the photosensitive layer by thermal evaporation.

[0099] The fabricated integrated light-emitting and detecting device is as Figure 9 shown.

[0100] In the embodiments of the present invention, by controlling the voltage application logic, the photocurrent, photovoltage, and voltage division detection modes can be switched. The photocurrent detection mode is beneficial for detecting light intensity under low light intensity, the photovoltage detection mode is beneficial for detecting light intensity under relatively high light intensity, and the voltage division detection mode is beneficial for detecting light intensity under the influence of ambient light.

[0101] The device in the embodiments of the present invention has both light-emitting and photoelectric detection functions. By changing the voltage application logic, multi-mode switching of light emission, photovoltaic, photocurrent, voltage division detection, and multi-band detection can be performed. The display device using this device has the ability of photoelectric detection, which is beneficial for increasing the integration degree and expanding the applicable device scenarios.

[0102] In the description of this specification, the descriptions with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0103] In addition, the terms such as "first" and "second" used in the embodiments of the present invention are only for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the technical features indicated in this embodiment. Thus, the features defined with terms such as "first" and "second" in the embodiments of the present invention can explicitly or implicitly indicate that at least one such feature is included in this embodiment. In the description of the present invention, the meaning of the word "plural" is at least two or more than two, such as two, three, four, etc., unless otherwise specifically defined in the embodiments.

[0104] In the embodiments of the present invention, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements not only includes those elements but also includes other elements not explicitly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, the element defined by the statement "comprising one..." does not exclude the existence of additional identical elements in the process, method, article or device comprising that element. In addition, components, features, and elements with the same name in different embodiments of the present invention may have the same meaning or different meanings, and their specific meanings need to be determined based on their explanations in the specific embodiments or further in combination with the context of the specific embodiments.

[0105] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention. After considering the specification and practicing the present invention, those skilled in the art will readily conceive of other embodiments of the present invention. This application is intended to cover any variations, uses, or adaptations of the present invention that follow the general principles of the present invention and include known common general knowledge or conventional technical means in the technical field not disclosed in the present invention. The specification and embodiments are only regarded as exemplary, and the true scope and spirit of the present invention are pointed out by the following claims.

Claims

1. A multi-working mode integrated luminescence detection device, characterized in that: The invention comprises a substrate, a first insulating layer, a second insulating layer, a third insulating layer, a diode, a first semiconductor layer, a second semiconductor layer, and a first electrode (111), a second electrode (112), a third electrode (120), a fourth electrode (313), a fifth electrode (211), a sixth electrode (212), a seventh electrode (311) and an eighth electrode (312); wherein the substrate, the first insulating layer, the second insulating layer, the third insulating layer, the second electrode (112), the diode and the first electrode (111) are arranged in sequence from bottom to top; the third electrode (120) and the fourth electrode (313) are deposited on the second insulating layer; the fifth electrode (211), the sixth electrode (212), the seventh electrode (311) and the eighth electrode (312) and the first semiconductor layer and the second semiconductor layer are deposited on the first insulating layer; and the second electrode (112) is electrically connected to the third electrode (120) and the seventh electrode (311).

2. A multi-working mode integrated luminescence detection device according to claim 1, characterized in that: The diode comprises an electron transport layer, a photosensitive layer and a hole transport layer which are arranged in sequence from top to bottom; the first electrode (111), the electron transport layer, the photosensitive layer, the hole transport layer and the second electrode (112) constitute a photodiode.

3. The multi-working mode integrated luminescence detection device according to claim 1, characterized in that: Among the third electrode (120), the fifth electrode (211), the sixth electrode (212) and the first semiconductor layer, the second insulating layer is used as a dielectric layer, the first semiconductor layer is used as an active layer, the fifth electrode (211) is used as a drain electrode, the sixth electrode (212) is used as a source electrode, and the third electrode (120) is used as a gate electrode to form a first TFT transistor; Among the fourth electrode (313), the seventh electrode (311), the eighth electrode (312) and the second semiconductor layer, the second insulating layer is used as a dielectric layer, the second semiconductor layer is used as an active layer, the seventh electrode (311) is used as a drain electrode, the eighth electrode (312) is used as a source electrode, and the fourth electrode (313) is used as a gate electrode to form a second TFT transistor.

4. The multi-working mode integrated luminescence detection device according to claim 2, characterized in that: The substrate is made of insulating material; the first insulating layer, the second insulating layer and the third insulating layer are made of organic polymers, metal oxides or non-metallic oxides; the first semiconductor layer and the second semiconductor layer are made of inorganic semiconductors, organic semiconductors or organic-inorganic hybrid semiconductors; the electron transport layer and the hole transport layer are made of conductive organic polymers, conductive organic small molecules, metal oxides and inorganic semiconductor materials; the photosensitive layer is made of organic light-emitting materials, quantum dots and nanocrystalline materials, inorganic materials and organic-inorganic hybrid materials.

5. A light emitting working method, applied to the multi-working mode light emitting detection integrated device as claimed in any one of claims 1 to 4, characterized in that: The following steps are involved: Applying a first voltage to the fourth electrode (313) so that the first TFT transistor is turned on; When a first operating voltage is applied to the first electrode (111) and the eighth electrode (312), the diode is in a light-emitting state, and at this time the first TFT transistor is used as a capacitor; When a first operating voltage is applied to the first electrode (111) and a second voltage is applied to the eighth electrode (312), the diode is in a non-luminous state.

6. A voltage division detection working method, applied to the integrated luminescence detection device according to any one of claims 1 to 4, characterized in that: The following steps are involved: Applying a second operating voltage to the first electrode (111) and the eighth electrode (312), and applying a third operating voltage to the fourth electrode (313), so that the diode generates a photovoltage effect; A first operating voltage is applied to the fifth electrode (211) and the sixth electrode (212), and current ambient light information is reflected through the voltage division at the third electrode (120).

7. A photocurrent detection working method, applied to the integrated luminescence detection device according to any one of claims 1 to 4, characterized in that: The following steps are involved: Applying a third operating voltage to the first electrode (111) and the eighth electrode (312), and applying a first voltage to the fourth electrode (313), so that the second TFT transistor is turned on; The current value between the first electrode (111) and the eighth electrode (312) reflects the current ambient light information.

8. A photovoltaic detection working method, applied to the integrated luminescence detection device according to any one of claims 1 to 4, characterized in that: The following steps are involved: Applying a fourth operating voltage to the first electrode (111) so that the diode generates a photovoltage effect; Applying a second voltage to the fourth electrode (313) so that the second TFT transistor is turned off; When the second TFT transistor is turned off, the voltage at the third electrode (120) and the working state of the first TFT transistor change according to the ambient light information; A first operating voltage is applied to the fifth electrode (211) and the sixth electrode (212), and current ambient light information is reflected through a current value between the fifth electrode (211) and the sixth electrode (212).

9. A multi-band detection working method, applied to the integrated luminescence detection device according to any one of claims 1 to 4, characterized in that: The following steps are involved: Arranging a plurality of the integrated light-emitting detection devices in an array to form a light-emitting array; Using a light-emitting array to receive ambient light information, so that part of the light-emitting detection integrated device emits light; The integrated light emitting detection device which is not in the light emitting mode is used to perform voltage division detection or photocurrent detection to obtain ambient light information.

10. A method for preparing a luminescence detection integrated device, used for preparing the luminescence detection integrated device as claimed in any one of claims 1 to 4, characterized in that: The following steps are involved: Obtaining and cleaning a substrate to serve as the substrate of the integrated luminescence and detection device; depositing a first insulating layer using chemical vapor deposition; depositing a first semiconductor layer and a second semiconductor layer on the first insulating layer by magnetron sputtering; Depositing a fifth electrode (211), a sixth electrode (212), a seventh electrode (311) and an eighth electrode (312) on the first semiconductor layer and the second semiconductor layer by magnetron sputtering and photolithography processes; depositing a second insulating layer using chemical vapor deposition; Depositing a third electrode (120) and a fourth electrode (313) on the second insulating layer by magnetron sputtering and photolithography; Spin coating a third insulating layer by spin coating and photolithography process; Depositing a second electrode (112) on the third insulating layer by magnetron sputtering and photolithography; Spin coating a hole transport layer and a photosensitive layer on the second electrode in sequence by a spin coating process; An electron transport layer and a first electrode (111) are sequentially deposited on the photosensitive layer by thermal evaporation.

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