Electrostatic chuck structure for semiconductor processing

Abstract

The present invention provides an electrostatic chuck structure for semiconductor processing, comprising a base, an adsorption electrode layer, and a ceramic dielectric layer, wherein the adsorption electrode layer is arranged between the base and the ceramic dielectric layer; further comprising: a retaining ring, which is fixedly mounted on the top edge of the ceramic dielectric layer; an air chamber, which is arranged inside the ceramic dielectric layer, and is connected to a plurality of air outlets at the top of the air chamber, wherein the plurality of air outlets are evenly distributed on the top surface of the ceramic dielectric layer, and each of the plurality of air outlets is connected to a boss, which extends to the top of the ceramic dielectric layer and is used to support a wafer; and a lifting mechanism, wherein the lifting mechanism is connected to the boss. Through the air chamber and the plurality of evenly distributed air outlets arranged on the ceramic dielectric layer, after the wafer is electrostatically adsorbed, gas for heat dissipation and cooling is introduced into the air chamber through an air inlet pipe, and the gas is diverted from the air chamber to the plurality of air outlets, and air is directly blown to the bottom surface of the wafer through the air outlets, thereby ensuring a heat dissipation effect.

Description

Technical Field

[0001] The present invention relates to the field of electrostatic chucks, and in particular to an electrostatic chuck structure used for semiconductor processing. Background Art

[0002] An electrostatic chuck is a fixture that uses the principle of electrostatic adsorption to secure an object. It is used to hold ultra-clean thin wafers (such as wafers) and maintain a high degree of flatness, thereby preventing deformation during processing. Due to its unique advantages, it has become the most widely used wafer clamping tool in semiconductor manufacturing and a core component of equipment used in etching, thin film deposition, and ion implantation.

[0003] Electrostatic chucks are crucial in semiconductor processing. They have advantages such as uniform adsorption force, low pollution, and can be used in vacuum environments.

[0004] The key and challenge of electrostatic chucks is temperature control. For example, dry etching requires maintaining a specific wafer temperature between 100°C and -70°C to maintain certain etching characteristics. Temperature control relies primarily on two methods: 1) increasing gas convection between the wafer surface and the electrostatic chuck surface to dissipate heat (helium is typically used as a cooling gas in semiconductor processes); and 2) dissipating heat through thermal conduction from the electrostatic chuck surface.

[0005] Conventional electrostatic chucks, such as those described in patent document CN218498043U (An Electrostatic Adsorption Plate), utilize air ducts within the base, with air supply holes at their lower ends. These ducts facilitate rapid cooling. This prior art utilizes air ducts to circulate gas within the ducts, preventing direct contact between the gas and the wafer. Consequently, the cooling gas cannot directly transfer heat to the wafer, resulting in poor heat dissipation and cooling. Summary of the Invention

[0006] The present invention provides an electrostatic chuck structure for semiconductor processing in order to solve the technical problem that heat dissipation gas cannot directly contact the wafer, resulting in poor heat dissipation effect.

[0007] The present invention solves the above technical problems through the following technical solutions:

[0008] The present invention provides an electrostatic chuck structure for semiconductor processing, comprising a base, an adsorption electrode layer, and a ceramic dielectric layer, wherein the adsorption electrode layer is disposed between the base and the ceramic dielectric layer; a retaining ring fixedly mounted on the top edge of the ceramic dielectric layer; an air chamber disposed within the ceramic dielectric layer, wherein a plurality of air outlets are connected to the top of the air chamber, the plurality of air outlets being evenly distributed on the top surface of the ceramic dielectric layer, and each of the plurality of air outlets is cooperatively connected to a boss extending above the ceramic dielectric layer, the boss being used to support a wafer; a lifting mechanism connected to the boss, wherein the lifting mechanism switches between two states: a top of the boss being flush with or higher than the top surface of the retaining ring; an air inlet pipe communicating with the air chamber; the lifting mechanism having a driving portion disposed within the air inlet pipe, wherein the driving portion provides driving force through the pressure of gas entering the air inlet pipe port; and an exhaust pipe, wherein a port of the exhaust pipe extends into the retaining ring.

[0009] In this technical solution, after the wafer is electrostatically adsorbed, during the processing, the air inlet pipe takes in air, and gas for heat dissipation and cooling is introduced into the air chamber. The gas is discharged from several air outlets, and air is directly blown to the bottom surface of the wafer through the air outlet, thereby ensuring the heat dissipation effect.

[0010] Preferably, the boss is a truncated cone structure, and the diameter of the boss gradually decreases from top to bottom.

[0011] In this technical solution, through the design of the boss being cone-shaped and the boss diameter gradually decreasing from top to bottom, when the boss is in a high position, the boss blocks the air outlet, and when the boss is in a low position, there is a gap between the air outlet wall and the boss, thereby realizing the opening of the air outlet for blowing air.

[0012] Preferably, the bottom of the boss is fixed with a carrier plate, the carrier plate is a mesh plate, the bottom surface of the carrier plate is fixed with a plurality of positioning columns, the bottom surface of the air chamber is fixed with a positioning sleeve, the inner ring of the positioning sleeve is cooperated with the positioning column, and the positioning column and the positioning sleeve are both vertically arranged; the bottom surface of the carrier plate is fixed with a heat conductive block.

[0013] In this technical solution, the carrier plate connects all the bosses together, and the carrier plate is driven by the lifting mechanism to synchronously drive all the bosses to move together. The design of the positioning column and the positioning sleeve provides a guide for the up and down movement of the carrier plate.

[0014] Preferably, the lifting mechanism includes a connecting rod, a lower movable block and an upper movable block; the lower movable block is connected to the driving part of the lifting mechanism, the upper movable block is fixed to one end of the connecting rod, and the other end of the connecting rod is fixed to one side of the carrier plate; a first inclined surface is provided on one side of the top of the lower movable block, and a second inclined surface is provided on the bottom of the upper movable block, and the first inclined surface and the second inclined surface are in contact with each other.

[0015] In this technical solution, the lifting mechanism is used to drive the boss to move up and down.

[0016] Preferably, the driving part includes a side rod, a connecting frame, a sealing disk, a retaining ring and a gasket; the outer ring of the retaining ring is fixedly connected to the inner tube wall of the intake pipe, and a sealing disk elastically connected to the intake pipe is provided on one side of the retaining ring, and a gasket is fixed on the disk surface of the sealing disk, the sealing disk, gasket and retaining ring are coaxially arranged, and the diameter of the gasket is larger than the inner diameter of the retaining ring, the sealing disk is fixedly connected to the connecting frame, the connecting frame is fixedly connected to one end of the side rod, and the other end of the side rod is fixedly connected to the lower movable block; a reinforcing plate is fixedly installed between the connecting frame and the side wall of the sealing disk.

[0017] In this technical solution, the driving unit provides drive for the lifting mechanism, and the driving unit is designed to provide driving force through the air pressure at the air inlet pipe port, so that the driving of the lifting mechanism does not require an additional power source; after the wafer is placed on the boss, gas is introduced to make the boss descend; after processing, the ventilation is stopped, the boss moves upward, and the air outlet is automatically opened and closed.

[0018] Preferably, a guide hole seat is fixed on the inner tube wall of the air intake pipe, a hole body is opened on the guide hole seat, a guide rod is connected to the hole body, one end of the guide rod is fixed to the side wall of the closing disk, a spring is sleeved on the guide rod, one end of the spring is fixed to the closing disk, and the other end of the spring is fixed to the guide hole seat.

[0019] In this technical solution, elastic installation of the sealing disc along the length direction of the air intake pipe is achieved through the provision of the spring, the guide rod and the guide hole seat.

[0020] Preferably, the connecting rod is provided with a U-shaped portion; the bottom surface of the U-shaped portion, the bottom surface of the positioning column and the bottom surface of the heat-conducting block are flush; when the top of the boss is flush with the top surface of the retaining ring, the bottom surface of the U-shaped portion, the bottom surface of the positioning column and the bottom surface of the heat-conducting block are in contact with the bottom surface of the air chamber; a positioning stop surface is provided on the side of the U-shaped portion close to the lower movable block.

[0021] In this technical solution, the bottom surface of the U-shaped part, the bottom surface of the positioning column and the bottom surface of the heat conductive block are designed to be flush. During wafer processing, the bottom surface of the U-shaped part, the bottom surface of the positioning column and the bottom surface of the heat conductive block are in contact with the bottom surface of the air chamber to facilitate heat conduction.

[0022] Preferably, a cavity is formed between the inner wall of the retaining ring, the top surface of the ceramic dielectric layer and the bottom surface of the wafer, the cavity is connected to the exhaust pipe, the top end of the air outlet is fixedly connected to an air outlet hood, the aperture of the air outlet hood gradually decreases from top to bottom, and the top port of the air outlet hood is provided with a top edge parallel to the bottom surface of the wafer, and a narrow channel is formed between the top edge and the bottom surface of the wafer.

[0023] In this technical solution, by enclosing a cavity, the gas can be prevented from diffusing and discharging, and collected and recovered through the exhaust pipe, thereby avoiding gas waste; and the diversion of the gas outlet hood and the diversion of the narrow channel formed by the top edge and the bottom surface of the wafer improves the uniformity of the air blowing on the bottom surface of the wafer.

[0024] Preferably, the port of the exhaust pipe is connected to a connecting pipe, and one end of the connecting pipe away from the exhaust pipe is connected to the pump body.

[0025] In this technical solution, the gas discharged from the exhaust pipe is extracted by a pump body and transported to a recovery device for recovery.

[0026] Preferably, a heating electrode and a cooling water channel are provided inside the base.

[0027] In this technical solution, the heating electrodes and the cooling water channels provide temperature control for the base.

[0028] On the basis of conforming to the common sense in this field, the above-mentioned preferred conditions can be arbitrarily combined to obtain the preferred embodiments of the present invention.

[0029] The positive progress effect of the present invention is:

[0030] The electrostatic chuck structure for semiconductor processing proposed above uses an air chamber and several evenly distributed air outlets arranged on a ceramic dielectric layer. After the wafer is electrostatically adsorbed, gas for heat dissipation and cooling is introduced into the air chamber through an air inlet pipe. The gas is diverted from the air chamber to several air outlets, and air is directly blown to the bottom surface of the wafer through the air outlet, thereby ensuring the heat dissipation effect; further, an air outlet hood is provided, which provides a guide for the air flow blown from the air outlet to the bottom surface of the wafer, and the air outlet hood adopts a trumpet-shaped design with a diameter gradually decreasing from top to bottom, and the top of the air outlet hood is designed to extend outward and be parallel to the bottom surface of the wafer. A narrow channel is formed between the top edge and the bottom surface of the wafer, and the air flow blows from the top of the air outlet hood to the bottom surface of the wafer. It can be guided along the narrow channel and diffused from the narrow channel to the bottom surface of the wafer, so that the wafer located between adjacent air outlet hoods where there is no blowing area can be blown by the air flow, thereby ensuring the heat dissipation of the bottom surface of the wafer. The uniformity of air blowing is improved; further, by setting a boss and a lifting mechanism for driving the boss to move up and down, the boss provides a support for wafer placement. When the wafer is processed, the boss is driven by the lifting mechanism to move downward, which can open the air outlet. When the wafer needs to be taken out and after being taken out, the boss moves and resets to seal the air inlet, ensuring that the air chamber is closed in the non-processing state to prevent foreign matter from entering. The lifting mechanism has a driving part arranged in the air inlet pipe, and the driving part provides driving force through the air pressure of the gas entering the air inlet pipe port, so that the lifting drive of the boss is powered by air pressure, and there is no need to set up an additional power source; a retaining ring is also provided. After the wafer is adsorbed, a cavity is formed between the bottom surface of the wafer, the inner wall of the retaining ring and the top surface of the ceramic dielectric layer. At the same time, the cavity is connected to the exhaust pipe, so that the gas can only be discharged from the exhaust pipe, which is convenient for gas recovery and avoids direct diffusion to the outside world and waste. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a schematic diagram of the overall external structure of the present invention.

[0032] Figure 2 It is a cross-sectional schematic diagram of the overall structure of the present invention.

[0033] Figure 3 For the present invention Figure 2 Schematic diagram of the structure with the A part in the middle enlarged.

[0034] Figure 4 It is a schematic diagram of the installation structure of one side of the ceramic dielectric layer and the exhaust pipe of the present invention.

[0035] Figure 5 It is a schematic diagram of the structure of the carrier plate and the lifting mechanism when the boss is in a high position.

[0036] Figure 6 For the present invention Figure 5 Schematic diagram of the structure with the B part enlarged.

[0037] Figure 7 It is a structural schematic diagram of the carrier plate and the lifting mechanism when the boss is in a low position according to the present invention.

[0038] Figure 8 Schematic diagram of the carrier board and the structure on the carrier board of the present invention.

[0039] Figure 9 It is a schematic diagram of the connection structure between the exhaust pipe and the pump body of the present invention.

[0040] Description of Reference Numerals

[0041] In the figure: 1, base; 101, heating electrode; 102, cooling water channel; 2, adsorption electrode layer; 3, ceramic dielectric layer; 4, retaining ring; 5, air inlet pipe; 6, exhaust pipe; 7, air outlet cover; 701, top edge; 8, boss; 9, carrier plate; 901, positioning sleeve; 902, positioning column; 903, heat conducting block; 10, air chamber; 11, lifting mechanism; 1101, connecting rod; 11011, U-shaped part; 1102, lower movable part Block; 11021, first inclined surface; 1103, upper movable block; 11031, second inclined surface; 1104, side rod; 1105, connecting frame; 1106, sealing disk; 1107, retaining ring; 1108, reinforcing plate; 1109, gasket; 1110, guide hole seat; 1111, guide rod; 1112, spring; 12, air outlet; 13, cavity; 14, narrow channel; 15, pump body; 16, connecting pipe; a, wafer. DETAILED DESCRIPTION

[0042] The present invention is further described below by way of examples, but the present invention is not limited to the scope of the examples.

[0043] like Figure 1-9As shown, an electrostatic chuck structure for semiconductor processing includes a base 1, an adsorption electrode layer 2 and a ceramic dielectric layer 3, wherein the adsorption electrode layer 2 is arranged between the base 1 and the ceramic dielectric layer 3; further comprising: a retaining ring 4, wherein the retaining ring 4 is fixedly mounted on the top edge of the ceramic dielectric layer 3; an air chamber 10, wherein the air chamber 10 is arranged inside the ceramic dielectric layer 3, wherein the top of the air chamber 10 is connected to a plurality of air outlet holes 12, wherein the plurality of air outlet holes 12 are evenly distributed on the top surface of the ceramic dielectric layer 3, and each of the plurality of air outlet holes 12 is connected to a boss 8. , the boss 8 extends to the top of the ceramic dielectric layer 3, and the boss 8 is used to support the wafer a; the lifting mechanism 11, the lifting mechanism 11 is connected to the boss 8, and the lifting mechanism 11 switches the top of the boss 8 between two states: flush with or higher than the top surface of the retaining ring 4; the air inlet pipe 5, the air inlet pipe 5 is connected to the air chamber 10; the lifting mechanism 11 has a driving part arranged in the air inlet pipe 5, and the driving part provides driving force through the air pressure of the gas entering the port of the air inlet pipe 5; the exhaust pipe 6, one port of the exhaust pipe 6 extends into the retaining ring 4.

[0044] In a specific implementation, the gas chamber 10 may also be disposed inside the base 1 , and the gas outlet 12 may be disposed to penetrate the adsorption electrode layer 2 and the ceramic dielectric layer 3 .

[0045] like Figure 3-7 As shown in FIG. 1 , as a specific technical solution, the boss 8 is a truncated cone structure, and the diameter of the boss 8 gradually decreases from top to bottom. By designing the boss 8 as a truncated cone, and its diameter gradually decreases from top to bottom, and the air outlet 12 matched with the boss 8 is also a truncated cone, when the boss 8 is in a high position, that is, Figure 5 As shown, at this time, the top of the boss 8 is higher than the top surface of the retaining ring 4, and the boss 8 blocks the air outlet 12, so that the air chamber 10 is closed; when the boss 8 moves to the low position, that is, Figure 7 As shown, at this time, the top of the boss 8 is flush with the top surface of the retaining ring 4, and a gap is formed between the boss 8 and the wall of the air outlet 12, so that the air outlet 12 is open and the gas in the air chamber 10 can be discharged from the air outlet 12.

[0046] By designing that the boss 8 can move up and down, before the wafer a is processed, the wafer a is placed on the boss 8 by an external loading and unloading mechanism, such as Figure 5 As shown, the boss 8 is then moved downward to Figure 7 As shown, the opening of the air outlet 12 is completed to provide blowing air for the wafer a during processing to cool it down; after the wafer a is processed, the boss 8 is reset upward to the position shown in FIG. Figure 5As shown, the vent 12 is closed, and the loading and unloading mechanism then removes the processed wafer a. The aforementioned design of boss 8 allows the boss 8 to ascend after processing, pushing wafer a upward and creating a gap between the edge of wafer a and the top surface of retaining ring 4, facilitating the external loading and unloading mechanism to retrieve and place wafer a. When not processing, vent 12 is closed to prevent foreign matter from entering the air chamber 10, providing a protective barrier. For example, in the event of an unexpected power outage, the vent 12 self-seals to prevent the ingress of foreign matter and dust.

[0047] Among them, when the air outlet 12 provides air blowing, heat dissipation and cooling for the bottom surface of wafer a, the air inlet pipe 5 is connected to the external air supply equipment, and the gas used for cooling enters the air inlet pipe 5, and the cooling gas can be helium; the cooling gas enters the air chamber 10 through the air inlet pipe 5, and then is discharged through several air outlets 12 to provide air blowing for the bottom surface of wafer a.

[0048] like Figure 4-8 As shown, as a specific technical solution, the bottom of the boss 8 is fixed with a carrier plate 9, and the carrier plate 9 is a mesh plate. The bottom surface of the carrier plate 9 is fixed with multiple positioning columns 902, and the bottom surface of the air chamber 10 is fixed with a positioning sleeve 901. The inner ring of the positioning sleeve 901 is connected with the positioning column 902, and the positioning column 902 and the positioning sleeve 901 are both vertically arranged; the bottom surface of the carrier plate 9 is fixed with a heat conductive block 903.

[0049] The carrier plate 9 connects all the bosses 8 into one piece. By controlling the lifting and lowering movement of the carrier plate 9, all the bosses 8 can be raised and lowered synchronously, thereby adjusting the height of all the bosses 8. During the lifting and lowering movement of the carrier plate 9, the positioning posts 902 move along with the carrier plate 9. The vertical positioning posts 902 slide with the positioning sleeves 901, providing a guide for movement.

[0050] The carrier plate 9 is designed as a mesh plate; the mesh holes thereon will not cause any obstruction, thereby avoiding obstruction of gas flow.

[0051] like Figure 5-7As shown, as a specific technical solution, the lifting mechanism 11 includes a connecting rod 1101, a lower movable block 1102 and an upper movable block 1103; the lower movable block 1102 is connected to the driving part of the lifting mechanism 11, the upper movable block 1103 is fixed to one end of the connecting rod 1101, and the other end of the connecting rod 1101 is fixed to one side of the carrier plate 9; a first inclined surface 11021 is provided on one side of the top of the lower movable block 1102, and a second inclined surface 11031 is provided on the bottom of the upper movable block 1103, and the first inclined surface 11021 and the second inclined surface 11031 are in contact with each other. The driving part includes a side rod 1104, a connecting frame 1105, a sealing disk 1106, a retaining ring 1107 and a gasket 1109; the outer ring of the retaining ring 1107 is fixedly connected to the inner tube wall of the intake pipe 5, and a sealing disk 1106 elastically connected to the intake pipe 5 is provided on one side of the retaining ring 1107, and a gasket 1109 is fixedly connected to the disk surface of the sealing disk 1106, the sealing disk 1106, the gasket 1109 and the retaining ring 1107 are coaxially arranged, and the diameter of the gasket 1109 is larger than the inner diameter of the retaining ring 1107, the sealing disk 1106 is fixedly connected to the connecting frame 1105, the connecting frame 1105 is fixedly connected to one end of the side rod 1104, and the other end of the side rod 1104 is fixedly connected to the lower movable block 1102; a reinforcing plate 1108 is fixedly installed between the connecting frame 1105 and the side wall of the sealing disk 1106. A guide hole seat 1110 is fixedly connected to the inner tube wall of the intake pipe 5, and a hole body is opened on the guide hole seat 1110. The hole body is connected with a guide rod 1111, and one end of the guide rod 1111 is fixedly connected to the side wall of the closing disk 1106. A spring 1112 is sleeved on the guide rod 1111, and one end of the spring 1112 is fixedly connected to the closing disk 1106, and the other end of the spring 1112 is fixedly connected to the guide hole seat 1110.

[0052] The specific operation of the lifting mechanism 11 is as follows: when the cooling gas is introduced into the air inlet pipe 5, the air pressure acts on the sealing disk 1106 and the gasket 1109, and the sealing disk 1106 moves under the action of the air pressure. Figure 5 Transform to Figure 7 In the state shown, during the movement of the closing disk 1106, the guide rod 1111 on the closing disk 1106 and the connecting frame 1105 move together, and the guide rod 1111 slides relative to the hole body on the guide hole seat 1110 to provide a guiding function. At the same time, the spring 1112 is compressed, and the connecting frame 1105 drives the lower movable block 1102 to move together through the side rod 1104. Figure 5 and Figure 7The first inclined surface 11021 and the second inclined surface 11031 shown are designed to always fit together. After the lower moving block moves, the upper moving block, the connecting rod 1101, the carrier plate 9, and the boss 8 move downward together due to the action of gravity; the boss 8 is driven by the air pressure of the cooling gas to move downward, and then the air outlet 12 is automatically opened for blowing.

[0053] After the intake pipe 5 stops passing cooling gas, the sealing disk 1106 loses the gas pressure, and the elastic force of the compression spring 1112 is used to provide a reset force for the sealing disk 1106, so that the sealing disk 1106 is reset, and the gasket 1109 on the sealing disk 1106 is re-covered on the retaining ring 1107, so that the intake pipe 5 is closed; when the sealing disk 1106 is reset, the connecting frame 1105 and the side rod 1104 drive the lower moving block to reset, and the lower moving block pushes the upper moving block to reset, so that it moves from Figure 7 Transform to Figure 5 In the state shown, the upper moving block is reset and moves, driving the carrier plate 9 and the boss 8 to move upward together through the connecting rod 1101, so that the boss 8 blocks the air outlet 12 again.

[0054] like Figure 7 As shown, a cavity 13 is formed between the inner wall of the retaining ring 4, the top surface of the ceramic dielectric layer 3 and the bottom surface of the wafer a, and the cavity 13 is connected to the exhaust pipe 6. The top end of the air outlet 12 is fixedly connected to the air outlet hood 7, and the aperture of the air outlet hood 7 gradually decreases from top to bottom, and the top port of the air outlet hood 7 is provided with a top edge 701 parallel to the bottom surface of the wafer a, and a narrow channel 14 is formed between the top edge 701 and the bottom surface of the wafer a.

[0055] Wafer a is placed on boss 8 and lowered to a low position, with the top of boss 8 flush with the top of retaining ring 4. The bottom of wafer a is supported by the top of boss 8 and the top of retaining ring 4. Then, the adsorption electrode layer 2 generates an electrostatic force field, adsorbing wafer a. A cavity 13 is formed between the inner wall of retaining ring 4, the top surface of ceramic dielectric layer 3, and the bottom surface of wafer a. Cooling gas from vent 12 enters cavity 13, preventing it from escaping to the outside world. The gas is discharged only through exhaust pipe 6.

[0056] The design of the gas outlet hood 7 provides a guide for the gas discharged from the gas outlet 12, wherein the top edge 701 on the gas outlet hood 7 and the bottom surface of the wafer a form a narrow channel 14, so that the gas blown to the bottom surface of the wafer a flows along the narrow channel 14 and diffuses along the bottom surface of the wafer a, so that the wafer a located at a position where there is no blowing air between adjacent gas outlet hoods 7 can be blown by the air flow, thereby ensuring the uniformity of heat dissipation and blowing of the bottom surface of the wafer a.

[0057] like Figure 9As shown in the figure, as a specific technical solution, the end of the exhaust pipe 6 is connected to a connecting pipe 16, and the end of the connecting pipe 16 away from the exhaust pipe 6 is connected to a pump body 15. The gas enters the cavity 13 and is discharged through the exhaust pipe 6. The pump body 15 extracts the gas. After passing through the exhaust pipe 6, the connecting pipe 16 and the pump body 15 in sequence, the gas is transported to the recovery container equipment for recovery to avoid direct diffusion to the outside world and causing waste.

[0058] like Figure 2 As shown, as a specific technical solution, a heating electrode 101 and a cooling water channel 102 are provided inside the base 1.

[0059] The heating electrode 101 and the cooling water channel 102 provide a temperature control structure, thereby providing temperature control for the entire electrostatic chuck structure.

[0060] like Figure 7 As shown, the connecting rod 1101 is provided with a U-shaped portion 11011; the bottom surface of the U-shaped portion 11011, the bottom surface of the positioning column 902 and the bottom surface of the heat-conducting block 903 are flush; when the top of the boss 8 is flush with the top surface of the retaining ring 4, the bottom surface of the U-shaped portion 11011, the bottom surface of the positioning column 902 and the bottom surface of the heat-conducting block 903 are in contact with the bottom surface of the air chamber 10; the U-shaped portion 11011 is provided with a positioning stop surface on the side close to the lower movable block 1102.

[0061] Among them, after the boss 8 descends to the low position, the bottom surface of the U-shaped part 11011, the bottom surface of the positioning column 902 and the bottom surface of the heat conductive block 903 are fitted with the bottom surface of the air chamber 10, providing direct contact, facilitating heat transfer of the temperature control structure, and realizing cooling of the wafer a through the temperature control of the heating electrode 101 and the cooling water channel 102, and the blowing provided by the cooling gas.

[0062] The U-shaped portion 11011 of the connecting rod 1101 is designed as follows: Figure 7 As shown, the side of the U-shaped portion 11011 close to the lower movable block 1102 is a stop surface. Figure 7 In the state shown, the lower moving block is provided with a position stop by the position stop surface.

[0063] The present invention is not limited to the above-described embodiments. Any changes in shape or structure fall within the scope of the present invention. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention. Such changes and modifications fall within the scope of the present invention.

Claims

1. An electrostatic chuck structure for semiconductor processing, comprising a base (1), an adsorption electrode layer (2) and a ceramic dielectric layer (3), wherein the adsorption electrode layer (2) is arranged between the base (1) and the ceramic dielectric layer (3); characterized in that: Also includes: A retaining ring (4), the retaining ring (4) being fixedly mounted on the top edge of the ceramic dielectric layer (3); An air chamber (10), the air chamber (10) is arranged inside the ceramic dielectric layer (3), a plurality of air outlet holes (12) are arranged on the top of the air chamber (10), the plurality of air outlet holes (12) are evenly distributed on the top surface of the ceramic dielectric layer (3), and the plurality of air outlet holes (12) are all connected to a boss (8), and the boss (8) extends above the ceramic dielectric layer (3), and the boss (8) is used to support the wafer (a); A lifting mechanism (11), the lifting mechanism (11) is connected to the boss (8), and the lifting mechanism (11) switches between two states: the top of the boss (8) is flush with the top surface of the retaining ring (4) or is higher than the top surface of the retaining ring (4); An air intake pipe (5), the air intake pipe (5) being in communication with the air chamber (10); the lifting mechanism (11) having a driving portion disposed in the air intake pipe (5), the driving portion providing driving force through the air pressure of the gas entering the port of the air intake pipe (5); an exhaust pipe (6), wherein one end of the exhaust pipe (6) extends into the retaining ring (4); A cavity (13) is formed between the inner wall of the retaining ring (4), the top surface of the ceramic dielectric layer (3) and the bottom surface of the wafer (a), and the cavity (13) is connected to the exhaust pipe (6). The top end of the air outlet (12) is fixedly connected to an air outlet hood (7), the aperture of the air outlet hood (7) gradually decreases from top to bottom, and the top end of the air outlet hood (7) is provided with a top edge (701) that is flush with the bottom surface of the wafer (a), and a narrow channel (14) is formed between the top edge (701) and the bottom surface of the wafer (a).

2. The electrostatic chuck structure for semiconductor processing according to claim 1, wherein: The boss (8) is a truncated cone-shaped structure, and the diameter of the boss (8) gradually decreases from top to bottom.

3. The electrostatic chuck structure for semiconductor processing according to claim 1, wherein: The bottom of the boss (8) is fixedly connected to a carrier plate (9), the carrier plate (9) is a mesh plate, the bottom surface of the carrier plate (9) is fixedly connected to a plurality of positioning columns (902), the bottom surface of the air chamber (10) is fixedly connected to a positioning sleeve (901), the inner ring of the positioning sleeve (901) is cooperatively connected to the positioning columns (902), and the positioning columns (902) and the positioning sleeve (901) are both vertically arranged; the bottom surface of the carrier plate (9) is fixedly connected to a heat conducting block (903).

4. The electrostatic chuck structure for semiconductor processing according to claim 3, wherein: The lifting mechanism (11) comprises a connecting rod (1101), a lower movable block (1102) and an upper movable block (1103); the lower movable block (1102) is connected to the driving part of the lifting mechanism (11), the upper movable block (1103) is fixed to one end of the connecting rod (1101), and the other end of the connecting rod (1101) is fixed to one side of the carrier plate (9); a first inclined surface (11021) is provided on one side of the top of the lower movable block (1102), and a second inclined surface (11031) is provided on the bottom of the upper movable block (1103), and the first inclined surface (11021) and the second inclined surface (11031) are in contact with each other.

5. The electrostatic chuck structure for semiconductor processing according to claim 4, wherein: The driving part comprises a side rod (1104), a connecting frame (1105), a sealing disk (1106), a retaining ring (1107) and a gasket (1109); the outer ring of the retaining ring (1107) is fixedly connected to the inner tube wall of the air inlet pipe (5); a sealing disk (1106) elastically connected to the air inlet pipe (5) is provided on one side of the retaining ring (1107), and a gasket (1109) is fixedly connected to the disk surface of the sealing disk (1106); the sealing disk (1106), the gasket (1109) ) and the retaining ring (1107) are coaxially arranged, and the diameter of the gasket (1109) is larger than the inner diameter of the retaining ring (1107), the sealing disk (1106) is fixedly connected with a connecting frame (1105), the connecting frame (1105) is fixedly connected to one end of the side rod (1104), and the other end of the side rod (1104) is fixedly connected to the lower movable block (1102); a reinforcing plate (1108) is fixedly installed between the connecting frame (1105) and the side wall of the sealing disk (1106).

6. The electrostatic chuck structure for semiconductor processing according to claim 5, wherein: A guide hole seat (1110) is fixedly connected to the inner tube wall of the air inlet pipe (5), a hole body is opened on the guide hole seat (1110), and the hole body is connected with a guide rod (1111), one end of the guide rod (1111) is fixedly connected to the side wall of the closing disk (1106), and a spring (1112) is sleeved on the guide rod (1111), one end of the spring (1112) is fixedly connected to the closing disk (1106), and the other end of the spring (1112) is fixedly connected to the guide hole seat (1110).

7. The electrostatic chuck structure for semiconductor processing according to claim 4, wherein: The connecting rod (1101) is provided with a U-shaped portion (11011); the bottom surface of the U-shaped portion (11011), the bottom surface of the positioning column (902) and the bottom surface of the heat-conducting block (903) are flush; when the top of the boss (8) is flush with the top surface of the retaining ring (4), the bottom surface of the U-shaped portion (11011), the bottom surface of the positioning column (902) and the bottom surface of the heat-conducting block (903) are in contact with the bottom surface of the air chamber (10); a stop surface is provided on the side of the U-shaped portion (11011) close to the lower movable block (1102).

8. The electrostatic chuck structure for semiconductor processing according to claim 1, wherein: The port of the exhaust pipe (6) is connected to a connecting pipe (16), and one end of the connecting pipe (16) away from the exhaust pipe (6) is connected to a pump body (15).

9. The electrostatic chuck structure for semiconductor processing according to claim 1, wherein: A heating electrode (101) and a cooling water channel (102) are provided inside the base (1).

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