All-fiber isolated SiC mosfet gate driver for euv and applications

Abstract

The application relates to the field of power electronic devices, in particular to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage and application, which comprises a transmitting side, a fiber group and a receiving side connected in sequence, the transmitting side comprises a constant-current laser driver, a semiconductor fiber-coupled laser, a fiber coupler of an FC joint, a high-speed optical transmitter driver and an optical transmitter, the fiber group comprises quartz power optical fibers and plastic signal optical fibers of the FC joint, and the receiving side comprises a beam expander, a laser cell, a 5V voltage-lifting IC, a 25V voltage-lifting IC, an optical receiver, a non-isolated driving IC and a push-pull current expansion circuit; the application adopts power optical fibers and signal optical fibers to transmit power and signals, has the great advantage that the isolation voltage is theoretically infinitely high, and common-mode interference caused by coupling capacitance is eliminated; meanwhile, the device efficiency is reasonably calculated, high-efficiency voltage-lifting ICs are matched, 0.8W driving power is realized, and the driving power is sufficient to drive a 6.5kV 25A high-voltage SiC MOSFET module to work at a switching frequency of 100kHz or above.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of power electronics, in particular to a full-optical fiber isolated SiC MOSFET gate driver suitable for ultra-high voltage and application. BACKGROUND

[0002] In the medium voltage (MV) field such as rail transit, ship traction, photovoltaic power generation, in order to pursue higher power level, the voltage level is also improved to reach several kV to several tens of kV. Under such voltage level, using high-voltage SiC MOSFET multi-chip series module or high-voltage multi-level topology has become a promising solution. However, the extremely high isolation voltage requirement, large dv / dt during switching and higher driving waveform accuracy requirement of these application fields bring difficulties to the design of the isolated driver.

[0003] The high isolation voltage puts high requirements on the insulation performance of the isolated driver. The traditional magnetic coupling isolation structure needs to increase the insulation distance to improve the insulation voltage. However, increasing the insulation distance will greatly increase the volume of the core, reduce the coupling degree, increase the leakage inductance, and cause the efficiency of the traditional isolated SiC MOSFET gate driver to decrease and the cost to increase. Moreover, electric field concentration may occur at the insulation interface, causing partial discharge, which greatly affects the insulation reliability of the traditional isolated SiC MOSFET gate driver.

[0004] The extremely high dv / dt during switching also brings great difficulties to the design of the traditional isolated SiC MOSFET gate driver. Due to the inherent coupling capacitance of the traditional isolation structure becomes the transmission channel of common-mode interference, and the extremely high dv / dt will generate a large common-mode current through the coupling capacitance This current directly flows to the voltage control side, and in serious cases, the common-mode current will damage the low-voltage control system, causing serious loss. In the field of multi-chip series module or high-voltage multi-level topology, dv / dt is multiplied, and dv / dt can reach several hundred V / ns, making the traditional gate isolation structure unsuitable, and a new isolation structure is needed.

[0005] In addition, since the precision requirement of the driving waveform in the field of multi-chip series module or high-voltage multi-level topology is very high, if the switching time error of 10ns is caused due to the distortion of the driving waveform, the voltage division unevenness of 1kV will be generated in the case of 100V / ns of dt / dt, which will affect the insulation reliability of the device, and in a serious case, the module may be burnt out due to breakdown. However, the parasitic parameters of the driving, including the parasitic parameters of the power supply (the internal resistance of the power supply, the parasitic inductance), the parasitic inductance of the driving wire, etc., will cause the distortion of the driving waveform, so the gate isolation driving facing the field of multi-chip series module or high-voltage multi-level topology should be optimized for the driving parasitic parameters to reduce their influence. SUMMARY

[0006] In view of the problems that the traditional isolation structure in the field of multi-chip series module or high-voltage multi-level topology in the prior art cannot meet the use requirement, and the driving waveform is distorted due to the driving parasitic parameters, the application provides a full-fiber isolation SiC MOSFET gate driver suitable for ultrahigh voltage and application.

[0007] The application is realized by the following technical scheme:

[0008] A full-fiber isolation SiC MOSFET gate driver suitable for ultrahigh voltage, comprising a transmitting side, a fiber group and a receiving side connected in sequence, the transmitting side comprising a constant-current laser driver, a semiconductor fiber-coupled laser, a fiber coupler of an FC connector, a high-speed optical transmitter driver and an optical transmitter, the input end of the constant-current laser driver and the input end of the high-speed optical transmitter driver are connected with an external output voltage, the output end of the constant-current laser driver is connected with the input end of the semiconductor fiber-coupled laser, the output end of the semiconductor fiber-coupled laser is connected with the input end of the fiber coupler of the FC connector, and the output end of the high-speed optical transmitter driver is connected with the input end of the optical transmitter.

[0009] The fiber group comprises a quartz power fiber of the FC connector and a plastic signal fiber, the input end of the quartz power fiber is connected with the output end of the fiber coupler of the FC connector, and the input end of the plastic signal fiber is connected with the output end of the optical transmitter.

[0010] The receiving side comprises a beam expander, a laser cell, a 5V boost IC, a 25V boost IC, a light receiver, a non-isolated drive IC and a push-pull current expansion circuit, the output end of the quartz power optical fiber is connected with the laser cell through the beam expander, the output end of the laser cell is connected with the 5V boost IC and the 25V boost IC in sequence, and the output ends of the 5V boost IC and the 25V boost IC are connected with the input end of the push-pull current expansion circuit; the output end of the plastic signal optical fiber is connected with the input end of the light receiver, the output end of the light receiver is connected with the input end of the non-isolated drive IC, the output end of the non-isolated drive IC is connected with the input end of the push-pull current expansion circuit, and the push-pull current expansion circuit is provided with three output ports for outputting power drive signals.

[0011] Preferably, the maximum output current of the constant current laser driver is 5A.

[0012] Preferably, the driving wavelength of the semiconductor optical fiber coupled laser is 808nm, and the optical power is 2.65W.

[0013] Preferably, the output current of the high-speed optical transmitter driver is 400mA.

[0014] Preferably, the laser cell adopts a gallium arsenide laser cell, and the normal working output voltage is 2V.

[0015] Preferably, the push-pull current expansion circuit comprises a push-pull circuit, a decoupling capacitor group and a low parasitic inductance wire, the push-pull circuit comprises three pairs of triodes, the decoupling capacitor group comprises 18 MLCC capacitors, and the 18 MLCC capacitors are distributed on the three ports of the push-pull current expansion circuit in a ratio of 1:1:1.

[0016] Preferably, the triode has a continuous current output capacity of 7A and an extremely low time delay of 30ns.

[0017] Preferably, the capacity of the MLCC capacitor is 10uF.

[0018] Preferably, the inductance of the low parasitic inductance wire is 1.17nH.

[0019] An application of the full optical fiber isolation SiC MOSFET gate driver suitable for super high voltage in a multi-chip series module or a high-voltage multi-level topology.

[0020] Compared with the prior art, the application has the following beneficial effects:

[0021] The application is a full-fiber isolated SiC MOSFET gate driver suitable for ultrahigh voltage, which uses insulated power optical fiber and signal optical fiber to transmit power and signal, has theoretically infinite isolation voltage, eliminates common-mode interference caused by coupling capacitance, optimizes parasitic parameters, improves driving waveform accuracy, and can be used in ultrahigh voltage fields such as multi-chip series connection and high-voltage multi-level topology. At the same time, the device efficiency is reasonably calculated, and a high-efficiency boost IC is matched to realize a driving power of 0.8W, which is sufficient to drive a 6.5kV 25A high-voltage SiC MOSFET module to work at a switching frequency of 100kHz or more, and has considerable driving capacity.

[0022] The application also reduces the maximum power supply voltage fluctuation during instantaneous power output to within 15mV and reduces the driving parasitic inductance to 1.17nH by optimizing the push-pull current expansion circuit structure, greatly reducing the influence of power supply impedance and wiring parasitic inductance on the driving waveform, and greatly improving the driving waveform accuracy. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 is a structural schematic diagram of the full-fiber isolated SiC MOSFET gate driver suitable for ultrahigh voltage of the application;

[0024] Figure 2 is a circuit principle diagram of the laser driver in the full-fiber isolated SiC MOSFET gate driver suitable for ultrahigh voltage of the application;

[0025] Figure 3 is a circuit principle diagram of the light emitter driver in the full-fiber isolated SiC MOSFET gate driver suitable for ultrahigh voltage of the application;

[0026] Figure 4 is a circuit principle diagram of the receiving side in the full-fiber isolated SiC MOSFET gate driver suitable for ultrahigh voltage of the application;

[0027] Figure 5 is a double-pulse test rising edge waveform of the full-fiber isolated SiC MOSFET gate driver suitable for ultrahigh voltage of the application;

[0028] Figure 6 is a double-pulse test falling edge waveform of the full-fiber isolated SiC MOSFET gate driver suitable for ultrahigh voltage of the application. DETAILED DESCRIPTION

[0029] The application will be further described in detail below in combination with specific embodiments, which are an explanation of the application rather than a limitation.

[0030] The application discloses a full-optical fiber isolated SIC MOSFET gate driver suitable for ultrahigh voltage Figure 1 , comprising a transmitting side, an optical fiber group and a receiving side connected in sequence, the transmitting side comprising a constant-current laser driver, a semiconductor optical fiber coupled laser, an optical fiber coupler of an FC joint, a high-speed optical transmitter driver and an optical transmitter, the input end of the constant-current laser driver and the input end of the high-speed optical transmitter driver are connected with an external output voltage, the output end of the constant-current laser driver is connected with the input end of the semiconductor optical fiber coupled laser, the output end of the semiconductor optical fiber coupled laser is connected with the input end of the optical fiber coupler of the FC joint, and the output end of the high-speed optical transmitter driver is connected with the input end of the optical transmitter.

[0031] The laser driver is composed of a DCDC chip adopting current detection resistance feedback to adjust output current, the circuit schematic diagram is as shown in Figure 2 , the maximum output current can reach 5A, the model is XL4501E1, the chip is matched with external elements such as capacitors C2, C4, C5, C3, inductor U5, Schottky diodes D1 and D2, 9V voltage input by the system is converted into constant current of 5A, and the semiconductor optical fiber coupled laser with a wavelength of 808nm and optical power of 2.65W is driven to work at full power.

[0032] The semiconductor optical fiber coupled laser converts electric energy into laser with a wavelength of 808nm at an efficiency of 40%.

[0033] The optical fiber coupler of the FC joint transmits optical power of 2.65W to the optical fiber group connected with the transmitting side and the receiving side.

[0034] The circuit schematic diagram is as shown in Figure 3 , the high-speed optical transmitter driver is composed of a U1 type chip TPS54202DDCR, a U4 type chip SN74LVC1G14DBVR and a U3 type chip SN75451BP and peripheral circuits thereof.The chip TPS54202DDCR is a 4.5V to 28V input, 2A output, EMI friendly synchronous step-down converter, which converts 9V voltage output by an external power supply into 5V voltage suitable for logic devices.The chip SN74LVC1G14DBV is a high-speed Schmitt trigger inverter, which is used for shaping an input driving signal and overcoming signal inversion effects of an optical transceiver.The chip SN75451BP is a high-speed high-current driving capability driver, which provides a current of up to 400mA to the optical transmitter to make the optical transmitter act quickly, and the three chips and the peripheral circuits thereof constitute the high-speed optical transmitter driver.

[0035] The optical transmitter receives the electric signal of the high-speed optical transmitter driver and converts the electric signal into an optical signal, and transmits the optical signal to the optical fiber group connected with the transmitting side and the receiving side.

[0036] The optical fiber group includes a quartz power optical fiber and a plastic signal optical fiber, both of which have FC connectors, the input end of the quartz power optical fiber is connected with the output end of the fiber coupler of the FC connector, and the input end of the plastic signal optical fiber is connected with the output end of the optical transmitter.

[0037] The quartz power optical fiber of the FC connector has the advantage of low loss, and the fiber coupler of the FC connector is used for transmitting optical power. The plastic signal optical fiber has the advantages of small size and low cost, and is used to connect the optical transmitter to transmit optical signals which are not sensitive to loss. The quartz power optical fiber and the plastic signal optical fiber of the FC connector are two insulated optical fibers, which can be arbitrarily lengthened, and can transmit energy and signals and eliminate common-mode interference, and provide infinite high voltage resistance.

[0038] The receiving side includes a beam expander, a laser cell, a 5V boost IC, a 25V boost IC, an optical receiver, a non-isolated drive IC and a push-pull current expansion circuit. The output end of the quartz power optical fiber is connected with the laser cell through the beam expander, the output end of the laser cell is connected with the 5V boost IC and the 25V boost IC in sequence, and the output ends of the 5V boost IC and the 25V boost IC are connected with the input end of the push-pull current expansion circuit. The output end of the plastic signal optical fiber is connected with the input end of the optical receiver, the output end of the optical receiver is connected with the input end of the non-isolated drive IC, the output end of the non-isolated drive IC is connected with the input end of the push-pull current expansion circuit, and the push-pull current expansion circuit is provided with three ports for outputting power drive signals. The push-pull current expansion circuit includes a push-pull circuit, a decoupling capacitor group and a low parasitic inductance wire, the push-pull circuit includes three pairs of triodes, and the decoupling capacitor group includes 18 MLCC capacitors, which are distributed on the three ports of the push-pull current expansion circuit in a ratio of 1:1:1.

[0039] The beam expander homogenizes the laser beam transmitted by the quartz power optical fiber of the FC connector and reduces the beam divergence angle to almost 0 Avoids local overheating caused by uneven light intensity.

[0040] The laser cell selects a gallium arsenide laser cell, and the photosensitive area is 1cm 2 , which converts optical energy into electrical energy with an efficiency of 38%, and the normal working output voltage is 2V.

[0041] Referring to Figure 4 The circuit schematic diagram shown in the drawing, the model of the 5V boost IC is TPS61022, which is an 8A boost converter with an ultra-low input voltage of 0.5V. Its function is to convert the output voltage of 2V of the gallium arsenide laser cell into 5V, to provide power input for the subsequent 25V boost IC and optical receiver, and to provide a gate negative bias of-5V.

[0042] 25V boost IC model is TPS61040DBVR, adjustable output voltage range up to 28V boost converter, which acts on the output voltage of 5V boost IC to 25V, for subsequent non-isolated drive IC and push-pull current expansion circuit power supply and provide 20V gate positive bias, realize 0.8W driving power, enough to drive 6.5kV 25A high-voltage SiC MOSFET module works at a switching frequency of 100kHz or more, so that the application has considerable driving ability.

[0043] The optical receiver model is HFBR-2521Z, which converts the optical signal transmitted by the plastic optical fiber into a 5V electrical signal and transmits the signal to the non-isolated drive IC.

[0044] The non-isolated drive IC model is UCC27531D, which is a single-channel high-speed gate driver with a maximum voltage of 35V and a maximum current of 5A. Its function is to convert the 5V drive electrical signal into a 25V drive electrical signal and perform current preliminary expansion to drive the push-pull current expansion circuit.

[0045] The push-pull circuit of the push-pull current expansion circuit includes three pairs of transistors Q1~Q6, and the models of the transistors are 2SC5569 and 2SA2016. These two models of transistors Q1~Q6 have a continuous current output capability of 7A and an extremely low time delay of 30ns, providing sufficient current output capability to drive SiC MOSFET well. The decoupling capacitor group includes 18 10uF MLCC capacitors, model GRM21BR61H106KE43L, distributed in a ratio of 1:1:1 on the three ports of the push-pull current expansion circuit, greatly reducing the power impedance and the influence of the power impedance on the drive waveform, improving the drive waveform accuracy. Low parasitic inductance wiring, using mutual inductance cancellation technology, and reducing self-induction technology greatly reduces the inductance of the parasitic inductance of the wiring, as low as 1.17nH, reducing the influence of the parasitic inductance of the wiring on the drive waveform, improving the drive waveform accuracy. The 25V drive electrical signal output by the non-isolated drive IC is amplified by the push-pull current expansion circuit, becoming a drive signal with sufficient current driving capability and high waveform accuracy, driving SiC MOSFET to work.

[0046] The transmitting side of the certain all-optical fiber isolated SIC MOSFET gate driver suitable for ultra-high voltage is 6cm long, 6cm wide and 6cm high, and the receiving side is 6.5cm long, 4cm wide and 6cm high, with a small volume; the power fiber and the signal fiber are both 1m long, which can effectively isolate voltage and common-mode interference. Figure 4The double pulse test is used for testing the switching transient characteristics of the drive, and the load inductance used is 4 mH. During the test, the disclosed full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage is used to apply a driving signal between the gate and the source of the upper tube, the gate and the source of the lower tube are short-circuited by a tin wire, and the bus voltage is set to 4 kV. A double pulse driving signal of 7 us-3 us-3 us is output by the signal generator, the driving voltage is +20 V and-5 V, and the driving resistance is 1.1 Ω.

[0047] In the 4 kV upper tube double pulse experiment, when the disclosed full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage is used to drive a 6.5 kV silicon carbide MOSFET module, the dv / dt reaches 110 V / ns, and the driving waveform quality is excellent, the rising edge of the driving waveform is only 62 ns (as shown in Figure 5 ), the falling edge is only 78 ns (as shown in Figure 6 ), there is no gate voltage oscillation, the driving characteristics are close to ideal driving, and the driving characteristics are close to ideal driving, and the driving characteristics are close to ideal driving. It has the ability to be applied to multi-chip series modules or high-voltage multi-level topology and other high-performance application occasions.

[0048] The application also discloses an application of the full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage in a multi-chip series module or a high-voltage multi-level topology.

[0049] The above-mentioned is only the preferred embodiment of the present application, and does not use to limit the technical scheme of the present application in any way, and those skilled in the art should understand that the technical scheme can be modified and replaced in several simple ways without departing from the spirit and principles of the present application, and these modifications and replacements also belong to the protection scope covered by the claims.

Claims

1. An all-fiber isolated SiC MOSFET gate driver suitable for ultra-high voltage, characterized in that, The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage.

2. The all-fiber isolated SiC MOSFET gate driver suitable for ultra-high voltage according to claim 1, characterized in that, The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage.

3. The all-fiber isolated SiC MOSFET gate driver suitable for ultra-high voltage according to claim 1, characterized in that, The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage.

4. The all-fiber isolated SiC MOSFET gate driver suitable for ultra-high voltage according to claim 1, wherein, The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage.

5. The all-fiber isolated SiC MOSFET gate driver suitable for ultra-high voltage according to claim 1, wherein, The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage.

6. The all-fiber isolated SiC MOSFET gate driver suitable for ultra-high voltage according to claim 1, characterized in that, The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage.

7. The all-fiber isolated SiC MOSFET gate driver suitable for ultra-high voltage according to claim 6, characterized in that, The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage.

8. The all-fiber isolated SiC MOSFET gate driver suitable for ultra-high voltage according to claim 6, wherein, The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage.

9. The all-fiber isolated SiC MOSFET gate driver suitable for ultra-high voltage according to claim 6, wherein, The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. The application relates to a full-fiber isolation SiC MOSFET gate driver suitable for super-high voltage. 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