Integrated depletion device and cascade structure

Abstract

The invention discloses an integrated depletion type device and a cascade structure. The integrated depletion type device comprises a high-voltage depletion type transistor and an adjusting module. The first end of the adjusting module is electrically connected with the source electrode of the high-voltage depletion type transistor, the second end of the adjusting module is electrically connected with the grid electrode of the high-voltage depletion type transistor, and the adjusting module is used for discharging charges of the source electrode of the high-voltage depletion type transistor. According to the invention, the adaptability of the integrated depletion type device can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and particularly to an integrated depletion-type device and a cascade structure. Background Art

[0002] The third-generation semiconductors, namely wide-bandgap semiconductors, are represented by silicon carbide devices and gallium nitride devices. Compared with traditional silicon devices, the third-generation semiconductor devices have superior performance such as high frequency, high efficiency, high power, high voltage resistance, high temperature resistance, and strong radiation resistance. They are the key core materials and electronic components that support the independent innovation development and transformation and upgrading of industries such as new-generation mobile communication, new energy vehicles, high-speed rail trains, and energy Internet, and have become the focus of global semiconductor technology and industrial competition.

[0003] In related technologies, when using third-generation semiconductors to prepare normally-off devices, the commonly used method is to cascade two transistors, that is, to cascade a high-voltage depletion-type transistor and a low-voltage enhancement-type transistor to achieve the normally-off function. However, although the cascading scheme is simple, due to the mismatch of parameters such as switching speed, parasitic capacitance, and leakage between the low-voltage device and the high-voltage device, the potential at the cascade midpoint is too high. In some high-voltage working environments, the low-voltage device may be broken down, affecting the working stability of the normally-off device. Therefore, the adaptability between the high-voltage depletion-type transistor and the low-voltage enhancement-type transistor is low, and there is a problem of difficult device selection when making normally-off devices. Summary of the Invention

[0004] The present invention provides an integrated depletion-type device and a cascade structure to improve the adaptability of the integrated depletion-type device.

[0005] According to one aspect of the present invention, an integrated depletion-type device is provided, and the integrated depletion-type device includes a high-voltage depletion-type transistor and an adjustment module;

[0006] The first end of the adjustment module is electrically connected to the source electrode of the high-voltage depletion-type transistor, the second end of the adjustment module is electrically connected to the gate electrode of the high-voltage depletion-type transistor, and the adjustment module is used to discharge the charge of the source electrode of the high-voltage depletion-type transistor.

[0007] Optionally, the adjustment module includes a first adjustment unit, the first end of the first adjustment unit is electrically connected to the first end of the adjustment module, and the second end of the first adjustment unit is electrically connected to the second end of the adjustment module; the first adjustment unit is used to discharge the charge of the source electrode of the high-voltage depletion-type transistor when the source voltage of the high-voltage depletion-type transistor exceeds a preset value; and / or,

[0008] The adjustment module includes a second adjustment unit. The first end of the second adjustment unit is electrically connected to the first end of the adjustment module, and the second end of the second adjustment unit is electrically connected to the second end of the adjustment module. The second adjustment unit is configured to adjust the magnitude of its current according to the source voltage of the high-voltage depletion-type transistor.

[0009] Optionally, the adjustment module includes the first adjustment unit;

[0010] The first adjustment unit includes a first diode. The cathode of the first diode is electrically connected to the first end of the first adjustment unit, and the anode of the first diode is electrically connected to the second end of the first adjustment unit; and / or,

[0011] The first adjustment unit includes a varistor. The first end of the varistor is electrically connected to the first end of the first adjustment unit, and the second end of the varistor is electrically connected to the second end of the first adjustment unit.

[0012] Optionally, the adjustment module includes the second adjustment unit;

[0013] The second adjustment unit includes a discharge resistor. The first end of the discharge resistor is electrically connected to the first end of the second adjustment unit, and the second end of the discharge resistor is electrically connected to the second end of the second adjustment unit.

[0014] Optionally, the second adjustment unit further includes a capacitor. The first end of the capacitor is electrically connected to the first end of the second adjustment unit, and the second end of the capacitor is electrically connected to the second end of the second adjustment unit.

[0015] Optionally, the adjustment module includes the second adjustment unit. The second adjustment unit includes a voltage division sub-unit and a control transistor;

[0016] The first end of the voltage division sub-unit is electrically connected to the first end of the second adjustment unit, the second end of the voltage division sub-unit is electrically connected to the second end of the second adjustment unit, and the voltage division end of the voltage division sub-unit is electrically connected to the control end of the control transistor. The first end of the control transistor is electrically connected to the first end of the second adjustment unit, and the second end of the control transistor is electrically connected to the second end of the second adjustment unit.

[0017] Optionally, the adjustment module includes the second adjustment unit. The second adjustment unit includes a voltage division sub-unit and a second diode;

[0018] The first end of the voltage dividing sub-unit is electrically connected to the first end of the second adjusting unit, the second end of the voltage dividing sub-unit is electrically connected to the second end of the second adjusting unit, the voltage dividing end of the voltage dividing sub-unit is electrically connected to the cathode of the second diode, and the second end of the voltage dividing sub-unit is electrically connected to the anode of the second diode.

[0019] Optionally, the voltage dividing sub-unit includes a first voltage dividing resistor and a second voltage dividing resistor;

[0020] The first end of the first voltage dividing resistor is electrically connected to the first end of the voltage dividing sub-unit, and the second end of the first voltage dividing resistor is electrically connected to the voltage dividing end of the voltage dividing sub-unit; the first end of the second voltage dividing resistor is electrically connected to the voltage dividing end of the voltage dividing sub-unit, and the second end of the second voltage dividing resistor is electrically connected to the second end of the voltage dividing sub-unit.

[0021] Optionally, the integrated depletion device further includes a packaging structure, and the high-voltage depletion transistor and the adjustment module are packaged in the packaging structure.

[0022] According to another aspect of the present invention, a cascade structure is provided. The cascade structure includes the integrated depletion device and an enhancement-mode silicon transistor as described above. Among them, the drain of the enhancement-mode silicon transistor is electrically connected to the source of the high-voltage depletion transistor, and the source of the enhancement-mode silicon transistor is electrically connected to the gate of the high-voltage depletion transistor.

[0023] The technical solution of the embodiment of the present invention uses an integrated depletion device including a high-voltage depletion transistor and an adjustment module; the first end of the adjustment module is electrically connected to the source of the high-voltage depletion transistor, the second end of the adjustment module is electrically connected to the gate of the high-voltage depletion transistor, and the adjustment module is used to discharge the charge of the source of the high-voltage depletion transistor. When the high-voltage depletion transistor forms a cascade structure, due to the charge discharge effect of the adjustment module, the midpoint of the cascade structure will not have too high a potential due to the matching problem of the enhancement-mode silicon transistor. Therefore, the integrated depletion device of this embodiment can be adapted to more types of enhancement-mode silicon transistors, and the adaptability of the integrated depletion device is higher.

[0024] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. Description of the Drawings

[0025] To more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0026] Figure 1 Schematic diagram of the circuit structure of an integrated depletion-type device provided by an embodiment of the present invention;

[0027] Figure 2 Schematic diagram of the circuit structure of another integrated depletion-type device provided by an embodiment of the present invention;

[0028] Figure 3 Schematic diagram of the circuit structure of another integrated depletion-type device provided by an embodiment of the present invention;

[0029] Figure 4 Schematic diagram of the circuit structure of another integrated depletion-type device provided by an embodiment of the present invention;

[0030] Figure 5 Schematic diagram of the circuit structure of another integrated depletion-type device provided by an embodiment of the present invention;

[0031] Figure 6 Schematic diagram of the circuit structure of another integrated depletion-type device provided by an embodiment of the present invention;

[0032] Figure 7 Schematic diagram of the circuit structure of another integrated depletion-type device provided by an embodiment of the present invention;

[0033] Figure 8 Schematic diagram of the circuit structure of a cascade structure provided by an embodiment of the present invention. Detailed implementation manners

[0034] To enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0035] It should be noted that the terms "first", "second", etc. in the description, claims and above-mentioned drawings of the present invention are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present invention described here can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0036] Figure 1 Schematic diagram of the circuit structure of an integrated depletion-type device provided by an embodiment of the present invention. Refer to Figure 1 , the integrated depletion-type device includes a high-voltage depletion-type transistor 101 and an adjustment module 102; the first end of the adjustment module 102 is electrically connected to the source electrode of the high-voltage depletion-type transistor 101, and the second end of the adjustment module 102 is electrically connected to the gate electrode of the high-voltage depletion-type transistor 101. The adjustment module 102 is used to discharge the charge of the source electrode of the high-voltage depletion-type transistor 101.

[0037] Specifically, a high-voltage depletion-type transistor, such as a GaN transistor, conducts electricity through a two-dimensional electron gas formed by the piezoelectric effect at the interface of two different bandgap materials (which can be AlGaN and GaN). Since only high-concentration electrons conduct electricity in the two-dimensional electron gas, there is no problem of body diode reverse recovery in silicon transistors. This means that between the drain and source of the gallium nitride transistor without applying any voltage between the gate and source, that is, it is a normally-on device. This does not conform to the general usage rules of power devices, so it is necessary to change from normally-on to normally-closed. In the related art, a GaN transistor can be cascaded with an enhancement-mode silicon transistor to form a cascode structure. However, as described in the background art, there will be a problem of too high a potential at the cascode midpoint in the cascode structure.

[0038] In this embodiment, the integrated depletion-type device has a source electrode S, a drain electrode D, and a gate electrode G. Among them, the source electrode of the high-voltage depletion-type transistor is electrically connected to the source electrode S of the integrated depletion-type device 100, the drain electrode of the high-voltage depletion-type transistor is electrically connected to the drain electrode D of the integrated depletion-type device 100, and the gate electrode of the high-voltage depletion-type transistor is electrically connected to the gate electrode G of the integrated depletion-type device 100. The source electrode of the high-voltage depletion-type transistor 101 is used to cascade an enhancement-type transistor, that is, the source electrode of the high-voltage depletion-type transistor 101 will subsequently serve as the midpoint of the cascade structure. In this embodiment, by providing an adjustment module 102, the adjustment module 102 can automatically detect the source electrode potential of the high-voltage depletion-type transistor 101 and discharge the charge of the source electrode of the high-voltage depletion-type transistor 101. After being fabricated into a cascade structure, the adjustment module 102 can reduce the voltage amplitude and voltage change rate of the source electrode of the high-voltage depletion-type transistor 101. On the one hand, when the cascade structure is in a stable off state, the drain electrode of the integrated depletion-type device is connected to a high-voltage bus. Since the integrated depletion-type device is a normally open device, without the adjustment module, the midpoint voltage of the cascade structure is relatively high. By providing the adjustment module, the potential in the off state can be reduced. On the other hand, during the process of the cascade structure switching from on to off, the voltage at the midpoint of the cascade structure changes relatively fast. By providing the adjustment module, the switching speed of the cascade structure can be controlled, preventing the potential of the source electrode of the high-voltage depletion-type transistor 101 from being too high, that is, it can avoid the problem that it is difficult to select an enhancement-type device due to the matching problem between the depletion-type device and the enhancement-type device in the cascade structure. Therefore, by adopting the cascade structure of the integrated depletion-type device in this embodiment, more types of enhancement-type silicon transistors can be selected, that is, the adaptability of the integrated depletion-type device is relatively high. Of course, it should be noted that when a user uses the integrated depletion-type device to fabricate a normally off device, a cascade structure can be adopted, that is, cascade the corresponding enhancement-type silicon transistors. The integrated depletion-type device can also be used to fabricate other devices.

[0039] The technical solution of this embodiment adopts an integrated depletion-type device including a high-voltage depletion-type transistor and an adjustment module; the first end of the adjustment module is electrically connected to the source electrode of the high-voltage depletion-type transistor, and the second end of the adjustment module is electrically connected to the gate electrode of the high-voltage depletion-type transistor. The adjustment module is used to discharge the charge of the source electrode of the high-voltage depletion-type transistor. When the high-voltage depletion-type transistor forms a cascade structure, due to the charge discharge effect of the adjustment module, the midpoint of the cascade structure will not have too high a potential due to the matching problem of the enhancement-type silicon transistor. Therefore, the integrated depletion-type device of this embodiment can be adapted to more types of enhancement-type silicon transistors, and the adaptability of the integrated depletion-type device is higher.

[0040] Optionally, Figure 2 is a schematic circuit structure diagram of another integrated depletion-type device provided by an embodiment of the present invention. Refer to Figure 2The adjustment module 102 includes a first adjustment unit 201. The first end of the first adjustment unit 201 is electrically connected to the first end of the adjustment module 102, and the second end of the first adjustment unit 201 is electrically connected to the second end of the adjustment module. The first adjustment unit 201 is configured to discharge the charge at the source of the high-voltage depletion transistor 101 when the source voltage of the high-voltage depletion transistor 101 exceeds a preset value.

[0041] Specifically, in this embodiment, the first adjustment unit 201 is in an off state when the voltage at the source of the high-voltage depletion transistor 101 is low (not exceeding the preset value). At this time, the charge of the high-voltage depletion transistor 101 is not discharged, which can reduce the leakage current and the power consumption of the cascade structure. When the voltage at the source of the high-voltage depletion transistor 101 exceeds the preset value, the first adjustment unit is turned on, so that the charge at the source of the high-voltage depletion transistor 101 is discharged through the adjustment module and the gate of the high-voltage depletion transistor 101, preventing the source voltage of the high-voltage depletion transistor 101 from being too high. Of course, it should be noted that the preset value can be set according to the specific application scenario, and this embodiment does not make specific limitations in this regard. In addition, the second end of the adjustment module is connected to the gate of the high-voltage depletion transistor 101, using the gate of the high-voltage depletion transistor 101 to provide a charge discharge path, so that the external ports of the integrated depletion device do not increase, and there is no need to additionally set connection ports for the adjustment module on the external device.

[0042] Optionally, Figure 3 is a schematic circuit diagram of another integrated depletion device provided by an embodiment of the present invention. Refer to Figure 3 The first adjustment unit includes a first diode 1021. The cathode of the first diode 1021 is electrically connected to the first end of the first adjustment unit, and the anode of the first diode is electrically connected to the second end of the first adjustment unit.

[0043] Specifically, the first diode 1021 is a zener diode. When the source potential of the high-voltage depletion transistor 101 is low, the first diode 1021 is reversely cut off, which can avoid the source leakage of the high-voltage depletion transistor 101. When the source potential of the high-voltage depletion transistor 101 is high, the first diode 1021 is reversely broken down, making the source of the high-voltage depletion transistor 101 conduct with the gate of the high-voltage depletion transistor 101, and the charge at the source of the high-voltage depletion transistor 101 is discharged, thereby reducing the source potential of the high-voltage depletion transistor 101. In this embodiment, the preset value of the first adjustment unit is also the reverse breakdown voltage of the first diode 1021.

[0044] Optionally, the first adjustment unit can also be a varistor. The first end of the varistor is electrically connected to the first end of the first adjustment unit, and the second end of the varistor is electrically connected to the second end of the first adjustment unit.

[0045] Specifically, in this embodiment, the principle of the varistor is similar to that of the first diode. When the voltage across it is relatively low, the impedance of the varistor is large, which can be understood as an open circuit. When the voltage across the varistor is relatively high, the impedance of the varistor decreases, which can be understood as a conducting path, thereby reducing the source potential of the high-voltage depletion-type transistor. Of course, the first adjustment unit can also be of other structures.

[0046] Optionally, Figure 4 is a schematic circuit diagram of another integrated depletion-type device provided by an embodiment of the present invention. Refer to Figure 4 . In some other embodiments, the adjustment module 102 includes a second adjustment unit 202. The first end of the second adjustment unit 202 is electrically connected to the first end of the adjustment module 102, and the second end of the second adjustment unit 202 is electrically connected to the second end of the adjustment module 102. The second adjustment unit is used to adjust the magnitude of its current according to the source voltage of the high-voltage depletion-type transistor.

[0047] Specifically, different from the first adjustment unit, the second adjustment unit is always in a conducting state, and the higher the source voltage of the high-voltage depletion-type transistor, the greater the current flowing through the second adjustment unit, and thus the faster the voltage decreases, which can prevent the source voltage of the high-voltage depletion-type transistor from rising too fast.

[0048] Optionally, Figure 5 is a schematic circuit diagram of another integrated depletion-type device provided by an embodiment of the present invention. Refer to Figure 5 . The second adjustment unit includes a discharge resistor 1022. The first end of the discharge resistor 1022 is electrically connected to the first end of the second adjustment unit, and the second end of the discharge resistor is electrically connected to the second end of the second adjustment unit.

[0049] Specifically, since the resistance value of the discharge resistor 1022 is fixed, when the source potential of the high-voltage depletion-type transistor 101 is relatively low, the discharge current is also small, and at this time, the source potential of the high-voltage depletion-type transistor 101 decreases at a relatively slow speed. When the source potential of the high-voltage depletion-type transistor 101 is relatively high, the discharge current is also large, and at this time, the source potential of the high-voltage depletion-type transistor 101 decreases at a relatively fast speed, which can prevent the source potential of the high-voltage depletion-type transistor 101 from rising too fast during the off state of the cascade structure and the switching process from on to off.

[0050] Further, continue to refer to Figure 5, the second adjustment unit further includes a capacitor 1023. The first end of the capacitor 1023 is electrically connected to the first end of the second adjustment unit, and the second end of the capacitor 1023 is electrically connected to the second end of the second adjustment unit. During the process of the high-voltage depletion transistor 101 switching from on to off, due to the charge storage effect of the capacitor 1023, the voltage overshoot at the source of the high-voltage depletion transistor 101 can be reduced, thereby avoiding an excessively high transient voltage amplitude at the source of the high-voltage depletion transistor 101.

[0051] Optionally, Figure 6 is a schematic circuit diagram of another integrated depletion device provided by an embodiment of the present invention. Refer to Figure 6 . The second adjustment unit includes a voltage dividing sub-unit 203 and a control transistor 1026; the first end of the voltage dividing sub-unit 203 is electrically connected to the first end of the second adjustment unit, the second end of the voltage dividing sub-unit 203 is electrically connected to the second end of the second adjustment unit, and the voltage dividing end of the voltage dividing sub-unit 203 is electrically connected to the control end of the control transistor 1026; the first end of the control transistor 1026 is electrically connected to the first end of the second adjustment unit, and the second end of the control transistor is electrically connected to the second end of the second adjustment unit.

[0052] Specifically, in this embodiment, the control transistor can be an enhancement-type transistor. When the high-voltage depletion transistor 101 is in the off state, the higher the potential of its source, the greater the current flowing through the voltage dividing sub-unit 203, causing the voltage at the source to drop faster. Additionally, as the source potential of the high-voltage depletion transistor 101 increases, the voltage at the voltage dividing end of the voltage dividing sub-unit 203 reaches the conduction voltage of the control transistor 1026. At this time, the control transistor 1026 conducts, thereby directly connecting the source and gate of the high-voltage depletion transistor 101 to achieve the effect of quickly discharging charges. Moreover, during the process of the high-voltage depletion transistor switching from on to off, when its source voltage is too high, it will also cause the voltage at the voltage dividing end of the voltage dividing sub-unit 203 to be too high, causing the control transistor 1026 to conduct, thereby quickly discharging the charges at the source of the high-voltage depletion transistor 101 and preventing its voltage amplitude from rising further, that is, the source voltage of the high-voltage depletion transistor 101 can be limited below a predetermined value. Of course, this predetermined value is determined by the voltage division ratio of the voltage dividing sub-unit and the threshold voltage of the control transistor 1026, and the preset value can be adjusted by adjusting either of the above two parameters.

[0053] Optionally, in some other embodiments, as Figure 7 shown, Figure 7Schematic diagram of the circuit structure of another integrated depletion-type device provided by an embodiment of the present invention. In this embodiment, the second adjustment unit includes a voltage-dividing subunit 203 and a second diode 1027; the first end of the voltage-dividing subunit 203 is electrically connected to the first end of the second adjustment unit, the second end of the voltage-dividing subunit 203 is electrically connected to the second end of the second adjustment unit, the voltage-dividing end of the voltage-dividing subunit 203 is electrically connected to the cathode of the second diode 1027, and the second end of the voltage-dividing subunit 203 is electrically connected to the anode of the second diode 1027.

[0054] Specifically, it is similar to the Figure 6 shown structure. In this embodiment, when the source potential of the high-voltage depletion-type transistor 101 is relatively low, the voltage at the voltage-dividing end of the voltage-dividing subunit is relatively low, and the second diode 1027 is cut off, and the charge at the source of the high-voltage depletion-type transistor is discharged through the voltage-dividing subunit. When the source potential of the high-voltage depletion-type transistor is relatively high, the voltage at the voltage-dividing end of the voltage-dividing subunit is also relatively high. At this time, the second diode 1027 is reversely broken down, so as to quickly discharge the charge, so that the source potential of the high-voltage depletion-type transistor drops below the limit value.

[0055] Optionally, referring to Figure 6 and Figure 7 , the voltage-dividing subunit includes a first voltage-dividing resistor 1024 and a second voltage-dividing resistor 1025; the first end of the first voltage-dividing resistor 1024 is electrically connected to the first end of the voltage-dividing subunit 203, and the second end of the first voltage-dividing resistor 1024 is electrically connected to the voltage-dividing end of the voltage-dividing subunit 203; the first end of the second voltage-dividing resistor 1025 is electrically connected to the voltage-dividing end of the voltage-dividing subunit 203, and the second end of the second voltage-dividing resistor 1025 is electrically connected to the second end of the voltage-dividing subunit 203. In this embodiment, the voltage-dividing function can be realized by using two voltage-dividing resistors, which has the advantages of simple structure and low cost.

[0056] Optionally, the integrated depletion-type device further includes a packaging structure, and the high-voltage depletion-type transistor and the adjustment module are packaged in the packaging structure.

[0057] An embodiment of the present invention further provides a cascade structure, as Figure 8 shown, Figure 8 Schematic diagram of the circuit structure of a cascade structure provided by an embodiment of the present invention. Referring to Figure 8, the cascade structure includes the integrated depletion-type device 100 and the enhancement-type silicon transistor 200 provided in any embodiment of the present invention. Among them, the drain of the enhancement-type silicon transistor is electrically connected to the source of the high-voltage depletion-type transistor 101, and the source of the enhancement-type silicon transistor is electrically connected to the gate of the high-voltage depletion-type transistor. The enhancement-type silicon transistor 200 can be a P-channel transistor or an N-channel transistor. As a normally-off device, since the adjustment module 102 is provided in the integrated depletion-type device 100, the midpoint potential of the cascade structure will not be too high, so the enhancement-type silicon transistor 200 can be selected more freely.

[0058] It should be understood that various forms of the processes shown above can be used, steps can be reordered, added, or deleted. For example, the steps recited in the present invention can be executed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is made herein.

[0059] The above specific embodiments do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. An integrated depletion-type device, characterized in that, the integrated depletion-type device includes a high-voltage depletion-type transistor and a regulation module; a first end of the regulation module is electrically connected to a source electrode of the high-voltage depletion-type transistor, a second end of the regulation module is electrically connected to a gate electrode of the high-voltage depletion-type transistor, and the regulation module is configured to discharge charges of the source electrode of the high-voltage depletion-type transistor.

2. The integrated depletion-type device according to claim 1, characterized in that, the regulation module includes a first regulation unit, a first end of the first regulation unit is electrically connected to the first end of the regulation module, a second end of the first regulation unit is electrically connected to the second end of the regulation module; the first regulation unit is configured to discharge charges of the source electrode of the high-voltage depletion-type transistor when a source voltage of the high-voltage depletion-type transistor exceeds a preset value; and / or, the regulation module includes a second regulation unit, a first end of the second regulation unit is electrically connected to the first end of the regulation module, a second end of the second regulation unit is electrically connected to the second end of the regulation module; the second regulation unit is configured to adjust a magnitude of its current according to the source voltage of the high-voltage depletion-type transistor.

3. The integrated depletion-type device according to claim 2, characterized in that, the regulation module includes the first regulation unit; the first regulation unit includes a first diode, a cathode of the first diode is electrically connected to the first end of the first regulation unit, an anode of the first diode is electrically connected to the second end of the first regulation unit; and / or, the first regulation unit includes a varistor, a first end of the varistor is electrically connected to the first end of the first regulation unit, a second end of the varistor is electrically connected to the second end of the first regulation unit.

4. The integrated depletion-type device according to claim 2, characterized in that, the regulation module includes the second regulation unit; the second regulation unit includes a discharge resistor, a first end of the discharge resistor is electrically connected to the first end of the second regulation unit, a second end of the discharge resistor is electrically connected to the second end of the second regulation unit.

5. The integrated depletion-type device according to claim 4, characterized in that, the second regulation unit further includes a capacitor, a first end of the capacitor is electrically connected to the first end of the second regulation unit, a second end of the capacitor is electrically connected to the second end of the second regulation unit.

6. The integrated depletion-type device according to claim 2, characterized in that, the regulation module includes the second regulation unit, and the second regulation unit includes a voltage division sub-unit and a control transistor; a first end of the voltage division sub-unit is electrically connected to the first end of the second regulation unit, a second end of the voltage division sub-unit is electrically connected to the second end of the second regulation unit, a voltage division end of the voltage division sub-unit is electrically connected to a control end of the control transistor; a first end of the control transistor is electrically connected to the first end of the second regulation unit, a second end of the control transistor is electrically connected to the second end of the second regulation unit.

7. The integrated depletion-type device according to claim 2, It is characterized in that the adjustment module includes the second adjustment unit, and the second adjustment unit includes a voltage division sub-unit and a second diode; the first end of the voltage division sub-unit is electrically connected to the first end of the second adjustment unit, the second end of the voltage division sub-unit is electrically connected to the second end of the second adjustment unit, the voltage division end of the voltage division sub-unit is electrically connected to the cathode of the second diode, and the second end of the voltage division sub-unit is electrically connected to the anode of the second diode.

8. The integrated depletion-type device according to claim 6 or 7, It is characterized in that the voltage division sub-unit includes a first voltage division resistor and a second voltage division resistor; the first end of the first voltage division resistor is electrically connected to the first end of the voltage division sub-unit, and the second end of the first voltage division resistor is electrically connected to the voltage division end of the voltage division sub-unit; the first end of the second voltage division resistor is electrically connected to the voltage division end of the voltage division sub-unit, and the second end of the second voltage division resistor is electrically connected to the second end of the voltage division sub-unit.

9. The integrated depletion-type device according to claim 1, It is characterized in that the integrated depletion-type device further includes a packaging structure, and the high-voltage depletion-type transistor and the adjustment module are packaged in the packaging structure.

10. A cascade structure, It is characterized in that the cascade structure includes the integrated depletion-type device according to any one of claims 1-9 and an enhancement-mode silicon transistor, wherein the drain of the enhancement-mode silicon transistor is electrically connected to the source of the high-voltage depletion-type transistor, and the source of the enhancement-mode silicon transistor is electrically connected to the gate of the high-voltage depletion-type transistor.

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