Semiconductor device and semiconductor device package including same

Abstract

Embodiments relate to a semiconductor device and a semiconductor device package. The semiconductor device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, an intermediate layer disposed between the first conductive semiconductor layer and the active layer or disposed inside the first conductive semiconductor layer. The first conductive semiconductor layer, the intermediate layer, the active layer and the second conductive semiconductor layer comprise aluminum; the intermediate layer includes a first intermediate layer having an aluminum composition lower than that of the first conductive semiconductor layer and a second intermediate layer having an aluminum composition higher than that of the first intermediate layer. By arranging the middle layer, damage of laser to the active layer can be reduced, optical power, electrical characteristics and reliability are improved, lattice defects are reduced, and crystallinity is improved.

Description

[0001] This application is a divisional application of the patent application (first-generation divisional) with the application number 202210649550.0, titled "Semiconductor Device and

[0002] Semiconductor Device Package Including Semiconductor Device", filed on June 10, 2022. The above patent application (first-generation divisional) is a divisional application of the invention patent application with the international filing date of "June 23, 2017", international application number "PCT / KR2017 / 006661", the application number for entering the Chinese national phase of "201780039190.X", and the invention title of "Semiconductor Device and Semiconductor Device Package Including Semiconductor Device".

[0003] Cross-reference to Related Applications

[0004] This application claims the priority of Korean Patent Application No. 10-2016-0079489 filed in Korea on June 24, 2016, and Korean Patent Application No. 10-2016-0112146 filed in Korea on August 31, 2016. The entire contents of the above applications are incorporated herein by reference. Technical Field

[0005] Embodiments relate to semiconductor devices and semiconductor device packages including semiconductor devices. Background Art

[0006] Semiconductor devices including compounds such as GaN, AlGaN, etc. have many advantages, such as a wide and easily adjustable bandgap energy, etc., and can be used differently as light-emitting devices, light-receiving devices, various diodes, etc.

[0007] Specifically, due to the development of thin-film growth technology and device materials, light-emitting devices such as light-emitting diodes or laser diodes using III-V or II-VI compound semiconductor materials can achieve various colors, such as red, green, blue, ultraviolet, etc., and use phosphors or achieve high-efficiency white light by combining colors, and have the advantages of low power consumption, semi-permanent life, fast response time, safety, and environmental friendliness compared with traditional light sources such as fluorescent lamps and incandescent lamps.

[0008] In addition, when manufacturing light-receiving devices such as photodetectors or solar cells using III-V or II-VI compound semiconductor materials, due to the development of component materials, the light-receiving elements absorb light in various wavelength regions to generate photocurrent, so that light in various wavelength regions from gamma rays to radio wavelength regions can be used. In addition, taking advantage of the fast response speed, safety, environmental friendliness, and easy control of device materials, the lamp device can also be easily used for power control, microwave circuits, or communication modules.

[0009] Therefore, the applications of semiconductor devices have been extended to transmission modules of optical communication devices, light-emitting diode (LED) backlights that replace cold cathode fluorescent lamps (CCFLs) for backlighting liquid crystal display (LCD) devices, white LED lighting devices that can replace fluorescent lamps or incandescent lamps, headlights of vehicles, traffic lights, sensors for detecting gases or fires, etc. In addition, the applications of semiconductor devices can be extended to high-frequency application circuits, another power control device, and communication modules.

[0010] In particular, light-emitting devices that emit light in the ultraviolet wavelength region can be used in hardening processes and for curing, medical, and sterilization applications due to their bactericidal effects.

[0011] Recently, research on ultraviolet light-emitting devices has been actively conducted, but there are problems in that it is difficult to implement vertical ultraviolet light-emitting devices and the crystallinity decreases in the process of separating substrates.

[0012] In conventional semiconductor devices, due to lattice mismatch and differences in the thermal expansion coefficients between semiconductor layers, strain can be changed in each semiconductor layer. Strain changes may cause dislocations or defects in the semiconductor layer. Dislocations or defects may cause V-pits or cracks, and V-pits or cracks may generate leakage current. SUMMARY OF THE INVENTION

[0013] TECHNICAL PROBLEM

[0014] Exemplary embodiments relate to providing a vertical ultraviolet semiconductor device.

[0015] In addition, exemplary embodiments relate to providing a semiconductor device having high crystallinity.

[0016] In addition, exemplary embodiments relate to providing a semiconductor device having improved optical power.

[0017] In addition, exemplary embodiments relate to providing a semiconductor device capable of improving the light extraction efficiency by enhancing the reverse diffusion of p-type dopants.

[0018] The problems to be solved in the embodiments are not limited to the above problems, and also include objectives and effects that can be determined from the solutions and embodiments of the problems described below.

[0019] TECHNICAL SOLUTION

[0020] One aspect of the present invention provides a semiconductor device, which includes: a light-emitting structure including a first-conductivity semiconductor layer, a second-conductivity semiconductor layer, an active layer, and an intermediate layer, the active layer being disposed between the first-conductivity semiconductor layer and the second-conductivity semiconductor layer, and the intermediate layer being disposed between the first-conductivity semiconductor layer and the active layer or inside the first-conductivity semiconductor layer, wherein the first-conductivity semiconductor layer, the intermediate layer, the active layer, and the second-conductivity semiconductor layer may include aluminum, and the intermediate layer may include a first intermediate layer having an aluminum composition lower than that of the first-conductivity semiconductor layer.

[0021] The intermediate layer may include a first intermediate layer and a second intermediate layer, and the second intermediate layer has an aluminum composition higher than that of the first intermediate layer.

[0022] The aluminum composition of the second intermediate layer may be higher than that of the first-conductivity semiconductor layer.

[0023] A plurality of first intermediate layers and a plurality of second intermediate layers may be alternately stacked.

[0024] The thickness of the first intermediate layer may be greater than that of the second intermediate layer.

[0025] The thickness ratio of the first intermediate layer to the second intermediate layer may be in the range of 2:1 to 6:1.

[0026] The total thickness of the intermediate layer may be in the range of 50 nm to 1000 nm.

[0027] The aluminum composition of the first intermediate layer may be in the range of 30% to 60%.

[0028] The aluminum composition of the second intermediate layer may be in the range of 60% to 100%.

[0029] The first-conductivity semiconductor layer may include a first-first-conductivity semiconductor layer and a first-second-conductivity semiconductor layer, and the intermediate layer may be disposed between the first-first-conductivity semiconductor layer and the first-second-conductivity semiconductor layer.

[0030] The first-second-conductivity semiconductor layer may be disposed closer to the active layer than the first-first-conductivity semiconductor layer.

[0031] The aluminum composition of the first-second-conductivity semiconductor layer may be lower than that of the first-first-conductivity semiconductor layer.

[0032] The thickness of the first-first-conductivity semiconductor layer may be greater than that of the first-second-conductivity semiconductor layer.

[0033] The light-emitting structure may include a plurality of grooves, and the plurality of grooves are arranged to directly reach a certain area of the first-second-conductivity semiconductor layer by passing through the second-conductivity semiconductor layer and the active layer.

[0034] The semiconductor device may further include a first conductive layer disposed in each of the plurality of grooves and having a connection electrode electrically connected to the first-second conductive semiconductor layer.

[0035] An intermediate layer may be disposed between the first conductive semiconductor layer and the active layer.

[0036] The light-emitting structure may include a plurality of grooves that are arranged through the second conductive semiconductor layer, the active layer, and the intermediate layer up to a certain region of the first conductive semiconductor layer.

[0037] The semiconductor device may further include a first conductive layer disposed in each of the plurality of grooves and having a connection electrode electrically connected to the first conductive semiconductor layer.

[0038] Another aspect of the present invention provides a semiconductor device package including a body and a semiconductor device disposed on the body, wherein the semiconductor device may include a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an intermediate layer disposed between the first conductive semiconductor layer and the active layer or inside the first conductive semiconductor layer. The first conductive semiconductor layer, the intermediate layer, the active layer, and the second conductive semiconductor layer may include aluminum, and the intermediate layer may include a first intermediate layer having an aluminum component lower than that of the first conductive semiconductor layer.

[0039] Another aspect of the present invention provides a method for manufacturing a semiconductor device, the method including sequentially forming a light absorption layer and the above-described light-emitting structure on a substrate; and separating the light absorption layer from the first conductive semiconductor layer by irradiating the substrate with a laser, wherein during the separation, the light absorption layer and the intermediate layer may absorb the laser.

[0040] Advantageous Effects

[0041] According to an exemplary embodiment, a vertical ultraviolet light-emitting device can be manufactured.

[0042] In addition, the crystallinity of the ultraviolet light-emitting device can be improved.

[0043] In addition, the optical power can be improved.

[0044] In addition, the propagation of dislocations is improved, so that the threading dislocation density (TDD) of the final semiconductor layer can be reduced to improve the light-emitting efficiency.

[0045] In addition, since the doping concentrations of the second-conductive-type dopants in each of the second conductive semiconductor layer and the electron blocking layer (EBL) are kept constant, the light extraction efficiency can be improved by improving the back-diffusion of the p-type dopants from the EBL to the active layer.

[0046] In addition, by improving dislocations or defects, the degradation of electrical characteristics due to leakage current can be improved.

[0047] Furthermore, full transverse electric (TE) polarization of the ultraviolet light-emitting device can be achieved by resolving dislocations or defects.

[0048] The various beneficial advantages and effects of the present invention are not limited by the detailed description and should be easily understood through the description of the detailed embodiments of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Figure 1 is a conceptual diagram of a light-emitting structure according to an embodiment of the present invention.

[0050] Figure 2 is a conceptual diagram of a light-emitting structure according to another embodiment of the present invention.

[0051] Figure 3 is a conceptual diagram of a semiconductor device according to an embodiment of the present invention.

[0052] Figure 4 is a conceptual diagram of a semiconductor device according to another embodiment of the present invention.

[0053] Figure 5a is a conceptual diagram of a semiconductor device according to still another embodiment of the present invention.

[0054] Figure 5b is Figure 5a a modified embodiment of

[0055] Figure 6a and 6b are plan views of semiconductor devices according to embodiments of the present invention.

[0056] Figure 7 is a conceptual diagram of a light-emitting structure having a light absorption layer and an intermediate layer formed therein.

[0057] Figure 8 is a cross-sectional photograph of a light absorption layer having a bulk structure.

[0058] Figure 9 is a cross-sectional photograph of a light absorption layer having a superlattice structure.

[0059] Figure 10 is a diagram for describing a process of separating a substrate.

[0060] Figure 11 It is a figure for describing the process of etching a light-emitting structure.

[0061] Figure 12 It is a figure showing a manufactured semiconductor device.

[0062] Figure 13 It is a conceptual diagram of a semiconductor device package according to an embodiment of the present invention.

[0063] Figure 14 It is a cross-sectional view showing a semiconductor device according to an embodiment.

[0064] Figure 15 It shows Figure 1 a cross-sectional view of region A of the semiconductor device.

[0065] Figure 16 It is a figure showing the dopant concentrations of a second-second conductive semiconductor layer and a second-third conductive semiconductor layer analyzed by secondary ion mass spectrometry (SIMS).

[0066] Figure 17 and 18 It is a figure comparing the response surface method (RSM) data of a comparative example and an example.

[0067] Figure 19 It is a photograph showing the surface of a second to third conductive semiconductor layer according to an embodiment.

[0068] Figures 20 to 23 It is a cross-sectional view showing a method of manufacturing a semiconductor device according to an embodiment.

[0069] Figure 24 It is a cross-sectional view showing a light-emitting device package according to an embodiment. Detailed Description

[0070] This embodiment can be modified in other forms, or various embodiments can be combined with each other, and thus the scope of the present disclosure is not limited to each embodiment described below.

[0071] Although an item described in a specific embodiment is not described in another embodiment, unless it is otherwise described in other embodiments or as long as there is no conflicting description therein, the item can be understood to be related to another embodiment.

[0072] For example, when the features of configuration A are described in a specific embodiment and the features of configuration B are described in another embodiment, even when an embodiment combining configuration A and configuration B is not explicitly described, unless otherwise stated in other embodiments or as long as there is no conflicting interpretation therein, it should be understood that they will fall within the scope of the present disclosure.

[0073] In the description of the embodiments, when an element is described as being "on" or "under" another element, the terms "on" or "under" include the meaning that the two elements are in direct contact with each other and the meaning that one or more other components are arranged and formed between the two components (indirectly). Further, when described as "above (on) or below (under), or on top or underneath", the direction can include not only the upward direction but also the downward direction with respect to an element.

[0074] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, which are suitable for implementation by those skilled in the art to which the present invention pertains.

[0075] A light-emitting structure according to an exemplary embodiment of the present invention can output light in the ultraviolet (UV) wavelength range. For example, the light-emitting structure can emit light in the near-UV wavelength range (UV-A), the far-UV wavelength range (UV-B), or the deep-UV wavelength range (UV-C). The wavelength range can be determined by the aluminum (Al) composition ratio of the light-emitting structure 120.

[0076] For example, light in the near-UV wavelength range (UV-A) can have a wavelength in the range of 320 nm to 420 nm, light in the far-UV wavelength range (UV-B) can have a wavelength in the range of 280 nm to 320 nm, and light in the deep-UV wavelength range (UV-C) can have a wavelength in the range of 100 nm to 280 nm.

[0077] Figure 1 is a conceptual diagram of a light-emitting structure according to an embodiment of the present invention.

[0078] The light-emitting structure 120A according to the present embodiment includes a first conductive semiconductor layer 124, a second conductive semiconductor layer 127, an active layer 126, and an intermediate layer 125 disposed between the first conductive semiconductor layer 124 and the active layer 126.

[0079] The first conductive semiconductor layer 124, the intermediate layer 125, the active layer 126, and the second conductive semiconductor layer 127 include Al. The Al composition can be controlled according to the desired UV wavelength range.

[0080] The first conductive semiconductor layer 124 may be formed of a III-IV or II-V compound semiconductor and may be doped with a first dopant. The first conductive semiconductor layer 124 may be formed of a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0 ≤ x1 ≤ 1, 0 ≤ y1 ≤ 1, and 0 ≤ x1 + y1 ≤ 1), for example, a semiconductor material selected from among GaN, AlGaN, InGaN, InAlGaN, etc. In addition, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 124 doped with the first dopant may be an n-type semiconductor layer.

[0081] The active layer 126 is disposed between the first conductive semiconductor layer 124 and the second conductive semiconductor layer 127. The active layer 126 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 124 and holes (or electrons) injected through the second semiconductor layer 127 meet. In the active layer 126, electrons and holes may transition to a lower energy level due to their recombination, and the active layer 126 may emit light having a UV wavelength.

[0082] The active layer 126 may have any one of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, but the structure of the active layer 126 is not limited thereto.

[0083] The intermediate layer 125 may be disposed between the first conductive semiconductor layer 124 and the active layer 126. The intermediate layer 125 includes a first intermediate layer 125a having an Al component lower than that of the first conductive semiconductor layer 124, and a second intermediate layer 125b having an Al component higher than that of the first conductive semiconductor layer 124. A plurality of first intermediate layers 125a and a plurality of second intermediate layers 125b may be alternately disposed.

[0084] The Al component of the first intermediate layer 125a may be lower than the Al component of the first conductive semiconductor layer 124. During a laser lift-off (LLO) process, the first intermediate layer 125a may absorb light irradiated onto the light-emitting structure 120 to prevent damage to the active layer 126. Accordingly, the semiconductor device according to the present embodiment may reduce damage to the active layer, thereby improving optical power, electrical characteristics, and reliability.

[0085] The thickness and Al component of the first intermediate layer 125a may be appropriately adjusted to absorb the laser irradiated onto the light-emitting structure 120 during the LLO process. The Al component of the first intermediate layer 125a may be in the range of 30% to 60%, and its thickness may be in the range of 1 nm to 10 nm. For example, the first intermediate layer 125a may be formed of AlGaN, but the present invention is not particularly limited thereto.

[0086] The Al component of the second intermediate layer 125b can be higher than that of the first conductive semiconductor layer 124. The second intermediate layer 125b increases the Al component reduced by the first intermediate layer 125a, so that the propagation direction of the lattice defects transmitted from the lower part of the intermediate layer 125 can be changed at the interface between the first intermediate layer 125a and the second intermediate layer 125b. A plurality of lattice defects can merge with each other at the interface, so that the lattice defects propagating above the intermediate layer 125 can be reduced. Therefore, the lattice defects of the epitaxial layer grown on the intermediate layer 125 can be reduced, and the crystallinity can be improved. In addition, due to the refractive index difference caused by the difference in the Al content of the first conductive semiconductor layer 124, the light extraction efficiency can be improved.

[0087] For example, the Al component of the second intermediate layer 125b can be in the range of 60% to 100%, and its thickness can be in the range of 0.1 nm to 2.0 nm. The second intermediate layer 125b can be made of AlGaN or AlN, but the present invention is not particularly limited thereto.

[0088] For example, in order to absorb the laser with a wavelength of 246 nm, the thickness of the first intermediate layer 125a can be greater than that of the second intermediate layer 125b. The thickness of the first intermediate layer 125a can be in the range of 1.0 nm to 10.0 nm, and the thickness of the second intermediate layer 125b can be in the range of 0.5 nm to 2.0 nm.

[0089] The thickness ratio of the first intermediate layer 125a to the second intermediate layer 125b (first intermediate layer: second intermediate layer) can be in the range of 2:1 to 6:1. When the thickness ratio is greater than 2:1, the thickness of the first intermediate layer capable of sufficiently absorbing the laser can be ensured, and when the thickness ratio is less than 6:1, the thickness of the second intermediate layer can be ensured to control the Al components of the first and second intermediate layers.

[0090] When the thickness ratio is less than 2:1, the first intermediate layer 125a becomes thinner and it is difficult to sufficiently absorb the laser. However, when the thickness ratio is greater than 6:1, the second intermediate layer 125b becomes too thin and the Al components of the first and second intermediate layers become lower.

[0091] The total thickness of the intermediate layer 125 can be in the range of 50 nm to less than 1000 nm. When such a range is satisfied, the crystallinity can be maintained when the laser is sufficiently absorbed. When the total thickness is less than 50 nm, the thickness of the first intermediate layer 125a becomes thinner, and thus it is difficult to sufficiently absorb the 246 nm laser. However, when the total thickness is greater than 1000 nm, the Al component of the intermediate layer becomes lower, and thus the crystallinity decreases.

[0092] The second conductive semiconductor layer 127 may be formed on the active layer 126, may be formed of a group III-V or II-VI compound semiconductor, and may be doped with a second dopant. The second conductive semiconductor layer 127 may be formed of a material having a composition formula of Inx5Aly2Ga1-x5-y2N (0 ≤ x5 ≤ 1, 0 ≤ y2 ≤ 1, and 0 ≤ x5 + y2 ≤ 1), or may be formed of a material selected from among AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductive semiconductor layer 127 doped with the second dopant may be a p-type semiconductor layer.

[0093] When the second conductive semiconductor layer 127 is made of AlGaN, hole injection may not be smooth due to the low conductivity of AlGaN. Accordingly, GaN having a relatively high conductivity and a polarity the same as that of the second conductive semiconductor layer 126 may be disposed on the lower surface of the second conductive semiconductor layer 127. However, the present invention is not particularly limited thereto, and the Al component of the second conductive semiconductor layer 127 may be reduced to a range of 1% to 10% such that an ohmic contact may be formed between the second electrode and the second conductive semiconductor layer 127.

[0094] Figure 2 is a conceptual diagram of a light-emitting structure according to another embodiment of the present invention.

[0095] The light-emitting structure 120B according to the present embodiment includes first conductive semiconductor layers 124a and 124b, a second conductive semiconductor layer 127, an active layer 126 disposed between the first conductive semiconductor layers 124a and 124b and the second conductive semiconductor layer 127, and an intermediate layer 125 disposed between the first conductive semiconductor layers 124a and 124b.

[0096] The first conductive semiconductor layers 124a and 124b include a first-first conductive semiconductor layer 124a and a first-second conductive semiconductor layer 124b, and the intermediate layer 125 may be disposed between the first-first conductive semiconductor layer 124a and the first-second conductive semiconductor layer 124b.

[0097] The first-second conductive semiconductor layer 124b may be disposed closer to the active layer 126 than the first-first conductive semiconductor layer 124a. The Al component of the first-second conductive semiconductor layer 124b may be lower than the Al component of the first-first conductive semiconductor layer 124a. The Al component of the first-second conductive semiconductor layer 124b may be in the range of 40% to 70%, and the Al component of the first-first conductive semiconductor layer 124a may be in the range of 50% to 80%.

[0098] The thickness of the first-second conductive semiconductor layer 124b can be thinner than the thickness of the first-first conductive semiconductor layer 124a. The first-first conductive semiconductor layer 124a can have a thickness that is 130% or more of the thickness of the first-second conductive semiconductor layer 124b. According to this structure, since the intermediate layer 125 is formed after the first-first conductive semiconductor layer 124a with a high Al component is sufficiently grown, the overall crystallinity of the light-emitting structure 120 can be improved.

[0099] Figure 1 The configuration described in can be directly applied to the configuration (Al component, thickness, etc.) of the intermediate layer 125. The intermediate layer 125 can be doped with a first dopant as needed.

[0100] Figure 3 is a conceptual diagram of a semiconductor device according to an embodiment of the present invention, and Figure 4 is a conceptual diagram of a semiconductor device according to another embodiment of the present invention.

[0101] Figure 1 The structure described in can be directly applied to the structure of the light-emitting structure 120A. Referring to Figure 3 , the groove 128 can be arranged up to a certain area of the intermediate layer 125 by passing through the second conductive semiconductor layer 127 and the active layer 126.

[0102] The first electrode 142 can be in contact with the intermediate layer 125 to be electrically connected to the first conductive semiconductor layer 124. The intermediate layer 125 has an Al component lower than that of the first conductive semiconductor layer 124, so that the intermediate layer 125 can be beneficial for current distribution. However, the present invention is not particularly limited thereto, and the groove 128 can be provided in a certain area of the first conductive semiconductor layer 124 by passing through the intermediate layer 125.

[0103] The intermediate layer 125 can be doped with an n-type dopant. Therefore, the intermediate layer 125 can be defined as the first-third conductive semiconductor layer having a low Al component in the first conductive semiconductor layer 124.

[0104] The first conductive layer 165 includes a connection electrode 167 disposed in the groove 128 and electrically connected to the first conductive semiconductor layer 124. The first electrode 142 can be disposed between the connection electrode 167 and the first conductive semiconductor layer 124. The first electrode 142 can be an ohmic electrode.

[0105] The first groove 128 may be arranged such that the distance from the upper surface of the groove 128 to the upper surface of the light-emitting structure becomes a value within the range of 1 μm to 4 μm. When the distance from the upper surface of the light-emitting structure to the upper surface of the groove 128 is less than 1 μm, the reliability of the light-emitting device may be reduced. However, when the distance from the upper surface of the light-emitting structure to the upper surface of the groove 128 exceeds 4 μm, the light extraction efficiency may be reduced due to crystal defects or the like in the light-emitting structure.

[0106] The second conductive layer 150 may be disposed on the lower surface of the second conductive semiconductor layer 127 and electrically connected thereto. The second conductive layer 150 may be disposed in a region between the plurality of connection electrodes 167. A region of the second conductive layer 150 may be exposed to be electrically connected to the electrode pad. Although not shown in the drawings, a second electrode (ohmic electrode) may be disposed between the second conductive layer 150 and the second conductive semiconductor layer 127.

[0107] Each of the first conductive layer 165 and the second conductive layer 150 may be formed of a transparent conductive oxide (TCO) film. The TCO film may be formed of a material selected from indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (AGZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), GZO, IZO nitride (IZON), ZnO, IrOx, RuOx, NiO, etc.

[0108] The first conductive layer 165 and the second conductive layer 150 may include an opaque metal such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, etc. In addition, the first conductive layer 165 may be configured with one or more layers made of a mixture of a TCO film and an opaque metal, but the present invention is not limited thereto.

[0109] The insulating layer 130 may be formed of at least one selected from SiO2, SixOy, Si3N, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc., but the present invention is not limited thereto. The insulating layer 130 may electrically insulate the connection electrode 167 from the active layer 126 and the second conductive semiconductor layer 127.

[0110] Figure 4 is a conceptual diagram of a semiconductor device according to another embodiment of the present invention.

[0111] Figure 2 The structure described in can be directly applied to the structure of the light-emitting structure 120B. Refer to Figure 4, the first conductive semiconductor layer 124 may include a first-first conductive semiconductor layer 124a and a first-second conductive semiconductor layer 124b, as well as an intermediate layer 125, and may be disposed between the first-first conductive semiconductor layer 124a and the first-second conductive semiconductor layer 124b.

[0112] The groove 128 may be arranged through the second conductive semiconductor layer 127, the active layer 126, and the first-second conductive semiconductor layer 124b to a certain area of the intermediate layer 125. The intermediate layer 125 has an Al component lower than that of the first conductive semiconductor layer 124, such that the intermediate layer 125 is conducive to current distribution.

[0113] However, the present invention is not particularly limited thereto, and the groove 128 may be arranged in a certain area of the first-second conductive semiconductor layer 124b.

[0114] In this case, the first-second conductive semiconductor layer 124b may be arranged closer to the active layer 126 than the first-first conductive semiconductor layer 124a, and the Al component and thickness of the first-second conductive semiconductor 124b may be less than those of the first-first conductive semiconductor layer 124a.

[0115] The thickness of the second intermediate layer 125b may be in the range of 500 nm to 1000 nm. The thickness of the first intermediate layer 125a may be in the range of 600 nm to 1500 nm. The thickness of the first intermediate layer 125a may vary according to the depth of the irregular pattern.

[0116] The light-emitting structure 120 may include a plurality of grooves 128 arranged in some areas of the first-second conductive semiconductor layer 124b by passing through the second conductive semiconductor layer 127 and the active layer 126.

[0117] The first conductive layer 165 may include connection electrodes 167 disposed inside each of the plurality of grooves 128 and electrically connected to the first-second conductive semiconductor layer 124b, and a first electrode 142 disposed between the first-second conductive semiconductor layer 124b and the connection electrodes 167. The first-second conductive semiconductor layer 124b has a relatively low Al content, such that the first-second conductive semiconductor layer 124b can be conducive to current injection and distribution. However, the present invention is not particularly limited thereto, and the first-first conductive semiconductor layer 124a and the first-second conductive semiconductor layer 124b may have the same Al component, and the groove 128 may be formed to a certain area of the first-first conductive semiconductor layer 124a.

[0118] Figure 5a is a conceptual diagram of a semiconductor device according to another embodiment of the present invention, and Figure 5b isFigure 5a Modified embodiment

[0119] Figure 1 The configuration of the light-emitting structure 120 described in can be directly applied to Figure 5a the configuration of the light-emitting structure 120. By passing through the second conductive semiconductor layer 127 and the active layer 126, the groove 128 can be arranged up to a certain area of the intermediate layer 125. However, the present invention is not particularly limited thereto, and the groove 128 can be arranged in a certain area of the light-emitting structure 120A by passing through the intermediate layer 125.

[0120] Refer to Figure 5b , the groove 128 can be arranged up to a certain area of the intermediate layer 125 by passing through the second conductive semiconductor layer 127, the active layer 126, and the first-second conductive semiconductor layer 124b.

[0121] The intermediate layer 125 has an Al component lower than that of the first conductive semiconductor layer 124, so that the intermediate layer 125 is conducive to current distribution. The intermediate layer 125 can be doped with an n-type dopant. However, the present invention is not particularly limited thereto, and the groove 128 can be arranged in a certain area of the first-second conductive semiconductor layer 124b.

[0122] The first electrode 142 can be arranged on the upper surface of the groove 128 to be electrically connected to the first conductive semiconductor layer 124. The second electrode 246 can be arranged at the lower part of the second conductive semiconductor layer 127.

[0123] The first electrode 142 and the second electrode 246 can be ohmic electrodes. The first electrode 142 and the second electrode 246 can be formed of at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IZO nitride (IZON), Al-Ga ZnO (AGZO), In-GaZnO (IGZO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, and Hf, but the present invention is not limited to these materials.

[0124] The second electrode pad 166 can be arranged at the edge of one side of the semiconductor device. Press the central part of the second electrode pad 166 so that the upper surface of the second electrode pad 166 can have a recessed part and a protruding part. A wire (not shown) can be bonded to the recessed part of the upper surface. Therefore, the bonding area can be widened so that the second electrode pad 166 and the wire can be more firmly bonded.

[0125] The second electrode pad 166 can be used to reflect light so that when the second electrode pad 166 is arranged close to the light-emitting structure 120, the light extraction efficiency can be improved.

[0126] The height of the protruding portion of the second electrode pad 166 can be higher than the height of the active layer 126. Thus, the second electrode pad 166 can reflect upward the light emitted from the active layer 126 in the horizontal direction of the device, thereby improving the light extraction efficiency and controlling the directivity of the light.

[0127] The first insulating layer 131 is partially opened at the lower part of the second electrode pad 166 so that the second conductive layer 150 and the second electrode 246 can be electrically connected. The passivation layer 180 can be formed on the upper surface and the side surface of the light-emitting structure 120. The passivation layer 180 can be an area adjacent to the second electrode 246, but can be in contact with the first insulating layer 131 under the second electrode 246.

[0128] For example, the width d22 of the portion where the first insulating layer 131 is opened and thus the second electrode 246 is in contact with the second conductive layer 150 can be in the range of 40 μm to 90 μm. When the width d22 is less than 40 μm, the operating voltage may increase, while when the width d22 is greater than 90 μm, it may be difficult to ensure the process margin for not exposing the second conductive layer 150 to the outside. When the second conductive layer 150 is exposed to the outside area of the second electrode 246, the reliability of the light-emitting device may decrease. Therefore, the width d22 can preferably fall within the range of 60% to 95% with respect to the total width of the second electrode pad 166.

[0129] The first insulating layer 131 can electrically insulate the first electrode 142 from the active layer 126 and the second conductive semiconductor layer 127. In addition, the first insulating layer 131 can electrically insulate the second electrode 246 and the second conductive layer 150 from the first conductive layer 165.

[0130] The insulating layer 131 can be formed of at least one selected from SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc., but the present invention is not limited thereto. The first insulating layer 131 can be formed with a single layer or multiple layers. For example, the first insulating layer 131 can be a distributed Bragg reflector (DBR) having a multilayer structure including an AlSi oxide or a Ti compound. However, the present invention is not limited thereto, and the first insulating layer 131 can include various reflection structures.

[0131] When the first insulating layer 131 performs an insulating function, the light emitted from the active layer 126 toward its side surface can be reflected upward to improve the light extraction efficiency. As described below, in a UV semiconductor device, as the number of grooves 128 increases, the light extraction efficiency may be more effective.

[0132] The second conductive layer 150 may cover the second electrode 246. Thus, the second electrode pad 166, the second conductive layer 150, and the second electrode 246 may form an electrical channel.

[0133] The second conductive layer 150 may completely surround the second electrode 246 to contact the side surface and the upper surface of the first insulating layer 131. The second conductive layer 150 may be formed of a material having a high adhesion strength to the first insulating layer 131, formed of at least one material selected from the group consisting of Cr, Al, Ti, Ni, Au, etc. and alloys thereof, and formed of a single layer or multiple layers.

[0134] When the second conductive layer 150 contacts the side surface and the upper surface of the first insulating layer 131, the thermal and electrical reliability of the second electrode 246 can be improved. In addition, the second conductive layer 150 may have a function of reflecting upward the light emitted between the first insulating layer 131 and the second electrode 246.

[0135] The second conductive layer 150 may be disposed within a second separation distance corresponding to the region where the second conductive semiconductor layer is exposed between the first insulating layer 131 and the second electrode 246. The second conductive layer 150 may contact the side surface and the upper surface of the second electrode 246 and the side surface and the upper surface of the first insulating layer 131 within the second separation distance.

[0136] In addition, the region where the second conductive layer 150 contacts the second conductive semiconductor layer 127 may be disposed within the second separation distance to form a Schottky junction, so that current can be easily distributed.

[0137] The second insulating layer 132 electrically insulates the second electrode 246 and the second conductive layer 150 from the first conductive layer 165. The first conductive layer 165 may be electrically connected to the first electrode 142 by passing through the second insulating layer 132.

[0138] The first conductive layer 165 and the bonding layer 160 may be arranged along the topography of the lower surface of the light-emitting structure 120 and the groove 128. The first conductive layer 165 may be formed of a material having a high reflectivity. For example, the first conductive layer 165 may include Al. When the first conductive layer 165 includes Al, the first conductive layer 165 is used to reflect upward the light emitted from the active layer 126, thereby improving the light extraction efficiency.

[0139] The bonding layer 160 may include a conductive material. For example, the bonding layer 160 may include a material selected from the group consisting of gold (Au), Sn, In, Al, Si, Ag, Ni, and copper (Cu) or alloys thereof.

[0140] The substrate 170 may be formed of a conductive material. For example, the substrate 170 may include a metal or a semiconductor material. The substrate 170 may be a metal having a high electrical conductivity and / or a high thermal conductivity. In this case, the heat generated when the semiconductor device operates can be quickly discharged to the outside.

[0141] The substrate 170 may include a material selected from the group consisting of Si, molybdenum (Mo), Si, tungsten (W), Cu, and Al, or an alloy thereof.

[0142] Irregularities may be formed on the upper surface of the light-emitting structure 120. The irregularities may improve the extraction efficiency of the light emitted from the light-emitting structure 120. Depending on the UV wavelength, the irregularities may have different average heights, and in the case of UV-C, when the height of each of the irregularities is in the range of 300 nm to 800 nm and their respective average height is in the range of 500 nm to 600 nm, the extraction efficiency of the light may be improved.

[0143] Figure 6a and 6b is a plan view of a semiconductor device according to an embodiment of the present invention.

[0144] When the Al component of the light-emitting structure 120 increases, the current diffusion characteristics inside the light-emitting structure 120 may deteriorate. In addition, compared with a GaN-based blue light-emitting device, the active layer 126 increases the amount of light emitted to its side surface (i.e., the transverse magnetic (TM) mode). The TM mode can be generated in a UV semiconductor device.

[0145] According to the present embodiment, when compared with a GaN semiconductor that emits blue light, a relatively large number of grooves 128 may be formed in a GaN semiconductor that emits light in the UV wavelength region for current diffusion, and the first electrode 142 may be disposed at each of the large number of grooves 128.

[0146] Reference Figure 6a , when the Al component increases, the current distribution characteristics may decrease. Therefore, the current is only distributed to the positions adjacent to each first electrode 142, such that the current density may sharply decrease at positions far from each first electrode 142. Therefore, the effective light-emitting region P2 may become narrower. The effective light-emitting region P2 may be defined as a boundary position having a current density of 40% or less with respect to the position P1 near the first electrode having the highest current density. For example, the effective light-emitting region P2 may be adjusted according to the level of the injected current and the Al component in the region within 40 μm from the center of the groove 128.

[0147] Specifically, the low current density region P3 between adjacent first electrodes 142 has a low current density and thus hardly contributes to light emission. Therefore, in the present embodiment, the first electrodes 142 are arranged more in the low current density region P3 having a low current density, so that the optical power can be improved.

[0148] Generally, since the GaN semiconductor layer has relatively high current diffusion characteristics, the areas of the grooves 128 and the first electrodes 142 can be preferably minimized. This is because as the areas of the grooves 128 and the first electrodes 142 become larger, the area of the active layer 126 becomes smaller. However, in the present embodiment, since the high current diffusion characteristics due to the Al component are relatively low, it is preferable that even if the area of the active region 126 increases, the low current density region P3 can be reduced by increasing the number of the first electrodes 142.

[0149] Reference Figure 6b , when the number of the grooves 128 is 48, the grooves 128 may not be arranged linearly in the horizontal and vertical directions and may be arranged in a zigzag manner. In this case, the area of the low current density region P3 becomes narrower, so that most of the active layers can participate in light emission. When the number of the grooves 128 is in the range of 70 to 110, the current can be more effectively distributed, so that the operating voltage can be further reduced and the optical power can be improved. In a semiconductor device that emits UV-C light, when the number of the grooves 128 is less than 70, the electrical and optical characteristics may deteriorate. However, when the number of the grooves 128 is greater than 110, the electrical characteristics may be improved, but the volume of the light emitting layer is reduced, so that the optical characteristics may be reduced.

[0150] The first area where a plurality of first electrodes 142 are in contact with the first conductive semiconductor layer 122 may be in the range of 7.4% to 20% or in the range of 10% to 20% of the maximum cross-sectional area of the light emitting structure 120 in the horizontal direction. The first area may be the sum of the areas where the first electrodes 142 are in contact with the first conductive semiconductor layer 122.

[0151] When the first area of the plurality of first electrodes 142 is less than 7.4%, the optical power is reduced due to insufficient current diffusion characteristics. However, when the first area exceeds 20%, the areas of the active layer and the second electrode are excessively reduced, so that the operating voltage is increased and the optical power is reduced.

[0152] In addition, with respect to the maximum cross-sectional area of the light emitting structure 120 in the horizontal direction, the total area of the plurality of grooves 128 may be in the range of 13% to 30%. When the total area of the plurality of grooves 128 does not satisfy the above conditions, it is difficult to control the total area of the first electrodes 142 within the range of 7.4% to 20%. In addition, there are problems of increased operating voltage and reduced optical power.

[0153] The second area where the second electrode 246 contacts the second conductive semiconductor layer 126 may be in the range of 35% to 70% of the maximum cross-sectional area of the light-emitting structure 120 in the horizontal direction. The second area may be the total area where the second electrode 246 contacts the second conductive semiconductor layer 126.

[0154] When the second area is less than 35%, the area of the second electrode becomes too small, resulting in problems such as an increase in the operating voltage and a decrease in the hole injection efficiency. When the second area exceeds 70%, the first area cannot be effectively widened, resulting in a problem of a decrease in the electron injection efficiency.

[0155] The first area and the second area have an inverse relationship. That is, when the number of grooves is increased to facilitate an increase in the number of first electrodes, the area of the second electrode decreases. To increase the optical power, it is important to balance the distribution characteristics of electrons and holes. Therefore, it is important to appropriately determine the ratio of the first area to the second area.

[0156] The area ratio (first area: second area) of the first area where a plurality of first electrodes contact the first conductive semiconductor layer to the second area where a plurality of second electrodes contact the second conductive semiconductor layer may be in the range of 1:3 to 1:10.

[0157] When the area ratio is greater than 1:10, the first area is relatively small, which may reduce the current distribution characteristics. In addition, when the area ratio is less than 1:3, there is a problem that the second area becomes relatively small.

[0158] Figure 7 is a conceptual diagram of a light-emitting structure having a light absorption layer and an intermediate layer formed therein, Figure 8 is a cross-sectional photograph of a light absorption layer having a bulk structure, Figure 9 is a cross-sectional photograph of a light absorption layer having a superlattice structure, Figure 10 is a diagram for describing a process of separating a substrate, Figure 11 is a diagram for describing a process of etching a light-emitting structure, and Figure 12 is a diagram illustrating a manufactured semiconductor device.

[0159] Reference Figure 7 , a buffer layer 122, a light absorption layer 123, a first-first conductive semiconductor layer 124a, an intermediate layer 125, a first-second conductive semiconductor layer 124b, an active layer 126, and a second conductive semiconductor layer 127 may be sequentially formed on a growth substrate 121.

[0160] The light absorption layer 123 includes a first light absorption layer 123a having a low Al component and a second light absorption layer 123b having a high Al component. A plurality of first light absorption layers 123a and a plurality of second light absorption layers 123b may be alternately arranged.

[0161] The Al composition of the first light absorption layer 123a can be lower than that of the first conductive semiconductor layer 124. The first light absorption layer 123a can be used as a separator by absorbing laser light during the LLO process. Thus, the growth substrate can be removed.

[0162] The thickness and Al composition of the first light absorption layer 123a can be appropriately adjusted to absorb laser light with a wavelength of 246 nm. The Al composition of the first light absorption layer 123a can be in the range of 20% to 60%, and its thickness can be in the range of 1 nm to 10 nm. For example, the first intermediate layer 125a can be formed of AlGaN, but the present invention is not particularly limited thereto. However, the present invention is not limited thereto, and the Al composition and thickness can be appropriately adjusted to absorb laser light.

[0163] The Al composition of the second light absorption layer 123b can be higher than that of the light emitting structure 120A. The second light absorption layer 123b can increase the Al composition reduced by the first light absorption layer 123a, thereby improving the crystallinity of the first conductive semiconductor layer 124 grown on the light absorption layer 123.

[0164] For example, the Al composition of the second light absorption layer 123b can be in the range of 60% to 100%, and its thickness can be in the range of 0.1 nm to 2.0 nm. The second light absorption layer 123b can be made of AlGaN or AlN.

[0165] To absorb laser light with a wavelength of 246 nm, the thickness of the first light absorption layer 123a can be greater than that of the second light absorption layer 123b. The thickness of the first light absorption layer 123a can be in the range of 1 nm to 10 nm, and the thickness of the second light absorption layer 123b can be in the range of 0.5 nm to 2.0 nm.

[0166] The thickness ratio of the first light absorption layer 123a to the second light absorption layer 123b can be in the range of 2:1 to 6:1. When the thickness ratio is less than 2:1, the first light absorption layer 123a becomes thinner, and thus it is difficult to sufficiently absorb laser light. When the thickness ratio is greater than 6:1, the second light absorption layer 123b becomes too thin, making the total Al composition of the light absorption layer lower.

[0167] The total thickness of the light absorption layer 123 can be in the range of 100 nm to 400 nm. When the total thickness is less than 100 nm, the thickness of the first light absorption layer 123a becomes thinner, and thus it is difficult to sufficiently absorb laser light with a wavelength of 246 nm. When the total thickness is greater than 400 nm, the total Al composition becomes lower, reducing the crystallinity.

[0168] According to this embodiment, the crystallinity can be improved by forming the light absorption layer 123 having a superlattice structure. With such a configuration, the light absorption layer 123 can be used as a buffer layer to reduce the lattice mismatch between the growth substrate 121 and the light emitting structure 120. Referring to Figure 8 , it can be seen that the crystal defects (black dots) on the surface of the light absorption layer 123 transferred to Figure 9 are relatively reduced, making the crystallinity more excellent.

[0169] The intermediate layer 125 can be disposed between the first conductive semiconductor layer 124 and the active layer 126 or within the first conductive semiconductor layer 124. The intermediate layer 125 includes a first intermediate layer 125a having an Al composition lower than that of the first conductive semiconductor layer 124, and includes a second intermediate layer 125b having an Al composition higher than that of the first conductive semiconductor layer 124.

[0170] The Al composition of the first intermediate layer 125a can be lower than that of the first conductive semiconductor layer 124. During the LLO process, the first intermediate layer 125a can absorb the laser light irradiated onto the semiconductor layer disposed on the light absorption layer 123 through the light absorption layer 123, thereby serving to prevent damage to the active layer 126. Therefore, the optical power and electrical characteristics can be improved. Figure 2 The structure described in

[0171] can be directly applied to the configuration of the intermediate layer 125. Figure 10 Referring to

[0172] , removing the growth substrate 121 may include irradiating the laser L1 from the side of the growth substrate 121 to separate the growth substrate 121. The laser L1 can have a wavelength range that can be absorbed by the first light absorption layer 123a. For example, the laser can be a KrF laser with a wavelength range of 248 nm, but the present invention is not particularly limited thereto.

[0173] The growth substrate 121 and the second light absorption layer 123b have a large band gap such that the laser L1 is not absorbed. However, the first light absorption layer 123a having a low Al composition can be decomposed by absorbing the laser L1. Therefore, the first light absorption layer 123a can be separated together with the growth substrate 121.

[0174] In this case, most of the laser is absorbed by the light absorption layer, such that there is not enough energy to separate the intermediate layer 125. Thus, even if the intermediate layer 125 absorbs the laser, the intermediate layer 125 may not be separated. In addition, the thickness of the light absorption layer 123 or the optical power of the laser can be adjusted such that the absorption of the laser and the separation of the intermediate layer 125 are prevented.

[0175] Thereafter, the light absorption layer 123-2 remaining on the first conductive semiconductor layer 124a can be removed by leveling.

[0176] Reference Figure 11 , a second conductive layer 150 can be formed on the second conductive semiconductor layer 127, and then a plurality of grooves 128 can be formed to pass through a part of the first conductive semiconductor layer 124 of the light-emitting structure 120. Then, an insulating layer 130 can be formed on the side surfaces of the grooves 128 and on the second conductive semiconductor layer 127. Thereafter, a first electrode 142 can be formed in the first conductive semiconductor layer 124b exposed by the grooves 128.

[0177] Reference Figure 12 , a first conductive layer 165 can be formed under the insulating layer 130. The first conductive layer 165 can be electrically insulated from the second conductive layer 150 through the insulating layer 130.

[0178] Then, a conductive substrate 170 can be formed under the first conductive layer 165, and a second electrode pad 166 can be formed on the second conductive layer 150 exposed by mesa etching.

[0179] The semiconductor device can be configured in a package and can be used for curing resins, resists, superoxide dismutase (SOD), or spin-on glass (SOG). Alternatively, the semiconductor device can be used for therapeutic medical care or for sterilizing air purifiers, water purifiers, etc.

[0180] Reference Figure 13 , the semiconductor device package can include: a body 2 having a groove 2a formed therein; a semiconductor device 1 disposed in the body 2; and a pair of lead frames 3 and 4 disposed in the body 2 and electrically connected to the semiconductor device 1.

[0181] The body 2 can include a material or coating that reflects UV light. In addition, the molding member 5 covering the semiconductor device 1 can include a material that allows UV light to transmit.

[0182] Figure 14 is a cross-sectional view illustrating a semiconductor device according to an embodiment, Figure 15 is an illustration Figure 1 of a cross-sectional view of region A of the semiconductor device, Figure 16is a graph showing the dopant concentrations of the second - second conductive semiconductor layer and the second - third conductive semiconductor layer analyzed by secondary ion mass spectrometry (SIMS), and Figure 17 and 18 is a graph comparing the response surface methodology (RSM) data of the comparative examples and the examples.

[0183] As Figure 14 and Figure 15 shown, the semiconductor device of the present embodiment can improve crystallinity by improving the dislocations of the semiconductor layer. The semiconductor device of the present embodiment improves dislocations due to the difference in lattice constants between the semiconductor layers, thereby maintaining the dopant concentration completely uniformly, thereby improving the light - emitting efficiency. To this end, the semiconductor device of the present embodiment may include a light - emitting structure 210 for improving dislocations.

[0184] An example of a UV light - emitting device 200 according to the present embodiment will be described, where the UV light has a wavelength in the range of 200 nm to 400 nm.

[0185] The light - emitting device 200 may include a substrate 201, a light - emitting structure 210, and a first electrode 251 and a second electrode 253.

[0186] The light - emitting structure 210 includes an AlN template 211, a first conductive semiconductor layer 212, an active layer 214, an electron blocking layer (EBL) 230, a second - first conductive semiconductor layer 216a, a second - second conductive semiconductor layer 218a, and a second - third conductive semiconductor layer 218b. In this case, the second - first conductive semiconductor layer may be referred to as a first semiconductor layer of the second conductive type, the second - second conductive semiconductor layer may be referred to as a second semiconductor layer of the second conductive type, and the second - third conductive semiconductor layer may be referred to as a third semiconductor layer of the second conductive type.

[0187] The substrate 201 may be formed of a material having a high thermal conductivity and may be a conductive substrate or an insulating substrate. For example, the substrate 201 may be formed of at least one of sapphire (Al2O3), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga2O3. An irregular structure may be formed on the substrate 201, but the present invention is not limited thereto.

[0188] The AlN template 211 may be formed on the substrate 201. The AlN template 211 may include a buffering function. The AlN template 211 may reduce the lattice mismatch between the substrate 201 and the material of the light - emitting structure 210 formed on the AlN template 211, and the AlN template 211 may be formed of a III - V group or II - VI group compound semiconductor, for example, GaN, InN, InGaN, AlGaN, InAlGaN, and AlInN other than AlN.

[0189] An AlN template 211 can be grown on a substrate 201 to solve defects caused by lattice constant differences between subsequently grown AlGaN-based semiconductor layers. The AlN template 211 can have a fully strained epitaxial structure, such that the luminescence efficiency can be improved during the growth of semiconductor layers at UV wavelengths. That is, the AlN template 211 can improve the crystallinity of subsequently grown AlGaN-based semiconductor layers, thereby improving the luminescence efficiency of the UV light-emitting device 200.

[0190] The first conductive semiconductor layer 212 can be formed of a semiconductor compound, for example, a group III-V or II-VI compound semiconductor. The first conductive semiconductor layer 212 can be formed of a single layer or multiple layers. The first conductive semiconductor layer 212 can be doped with a first conductive dopant. For example, when the first conductive semiconductor layer 212 is an n-type semiconductor layer, the first conductive semiconductor layer 212 can include an n-type dopant. For example, the n-type dopant can include Si, Ge, Sn, Se, or Te, but the present invention is not limited thereto.

[0191] The first conductive semiconductor layer 212 of the present embodiment can include a semiconductor material having a composition formula of AlxGa1-xN (0 < x < 1), but the present invention is not limited thereto. For example, the first conductive semiconductor layer 212 can be formed of one or more of AlGaP, InGaP, AlInGaP, InP, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, and GaP.

[0192] The active layer 214 can be disposed on the first conductive semiconductor layer 212. The active layer 214 can be formed of at least one of a single quantum well structure, an MQW structure, a quantum wire structure, and a quantum dot. The active layer 214 is a layer in which electrons (or holes) injected through the first conductive semiconductor layer 212 and holes (or electrons) injected through the second-first conductive semiconductor layer 216a meet to emit light due to the difference between the band gaps of the energy bands of the material forming the active layer 214.

[0193] The active layer 214 can be made of compound semiconductors. For example, the active layer 214 can be implemented with at least one of group III-V or II-VI compound semiconductors. The active layer 214 can include quantum wells and quantum barriers. When the active layer 214 is implemented with an MQW structure, the quantum wells and quantum barriers can be arranged alternately. Each of the quantum wells and quantum barriers can be formed of one or more pairs of structures among AlGaN / GaN, AlGaN / AlGaN, InGaN / GaN, InGaN / InGaN, InAlGaN / GaN, GaAs / AlGaAs, InGaAs / AlGaAs, GaP / AlGaP, InGaP, and AlGaP, but the present invention is not limited thereto.

[0194] The EBL 230 can be disposed on the active layer 214. The EBL 230 according to the present embodiment can have a single-layer structure or a multi-layer structure. The EBL 230 can be implemented with at least one of group III-V or II-VI compound semiconductors, but the present invention is not limited thereto. The EBL 230 can be doped with a second-conductivity-type dopant. For example, when the EBL 230 is a p-type semiconductor layer, the second-conductivity-type dopant can include Mg, Zn, Ca, Sr, or Ba as a p-type dopant.

[0195] The second-conductive semiconductor layers 216, 218a, and 218b can include a second-first-conductive semiconductor layer 216, a second-first-conductive semiconductor layer 218a, and a second-first-conductive semiconductor layer 218b.

[0196] The second-first-conductive semiconductor layer 216 can be disposed on the EBL 230. The second-first-conductive semiconductor layer 216 can be implemented with a group III-V or II-VI compound semiconductor. For example, the second-first-conductive semiconductor layer 216 can be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP. The second-first-conductive semiconductor layer 216 of the present embodiment can include an AlGaN-based semiconductor material. The second-first-conductive semiconductor layer 216 can be doped with a second-conductivity-type dopant. When the second-first-conductive semiconductor layer 216 is a p-type semiconductor layer, the second-conductivity-type dopant can include Mg, Zn, Ca, Sr, or Ba as a p-type dopant.

[0197] The second-second conductive semiconductor layer 218a may be disposed on the second-first conductive semiconductor layer 216. The second-second conductive semiconductor layer 218a may include a function of bending the dislocation D from the second-first conductive semiconductor layer 216. To this end, the second-second conductive semiconductor layer 218a may grow three-dimensionally. The second-second conductive semiconductor layer 218a may have a function of buffering the subsequently grown second-third conductive semiconductor layer 218b. The second-second conductive semiconductor layer 218a may solve the defect by bending the dislocation D from the second-first conductive semiconductor layer 216, thereby solving the reverse diffusion of the second-conductive type dopant from the EBL 230 to the active layer 214. Reference Figure 16 , the second-conductive type dopant Mg of the second-first conductive semiconductor layer 216 according to the present embodiment may be doped uniformly. That is, according to the present embodiment, stable doping of the second-first conductive semiconductor layer 216 may be achieved.

[0198] In the bending of the dislocation D, the angle θ between the straight line connecting the starting point DS and the ending point DT of the dislocation D from the second-first conductive semiconductor layer 216 and the upper surface of the second-first conductive semiconductor layer 126 may be 45 degrees or less. Here, when the angle θ between the straight line and the upper surface of the second-second conductive semiconductor layer 218a exceeds 45Ω, the dislocation D may propagate from the second-second conductive semiconductor layer 218a to the second-third conductive semiconductor layer 218b.

[0199] The second-second conductive semiconductor layer 218a may be formed of GaN including a second-conductive type dopant, but the present invention is not limited thereto. The second-second conductive semiconductor layer 218a may grow three-dimensionally to bend the dislocation D from the second-first conductive semiconductor layer 216. That is, the second-second conductive semiconductor layer 218a may improve the propagation of the dislocation D toward the second conductive semiconductor layer 216 by bending the dislocation D from the second-first conductive semiconductor layer 216 from the C-plane direction to the A-plane direction and reducing the TDD at the interface with the second-third conductive semiconductor layer 218b.

[0200] Specifically, reference Figure 17 and 18 , Figure 17 illustrates the RSM data of the comparative example, in which the second-second conductive semiconductor layer 218a is omitted, and Figure 18The figure shows an example of RSM data including the second-second conductive semiconductor layer 218a. Here, the RSM data is a strain relaxation parameter, and in the comparative example, the RSM data represents the second-first conductive semiconductor layer of AlGaN and P-GaN in a two-dimensional (2D) mode, and in the example, the RSM data represents the second-first conductive semiconductor layer 216 of AlGaN and the second-second conductive semiconductor layer 218a of three-dimensional (3D) P-GaN.

[0201] Here, the x-axis is inversely proportional to the difference in the A-plane lattice constant (2 / difference in the A-plane lattice constant), and the Y-axis is inversely proportional to the difference in the C-plane lattice constant (2 / difference in the C-plane lattice constant).

[0202] When compared with the comparative example, the example can reduce the parallel mismatch between the second-first conductive semiconductor layer 216 of AlGaN and the second-second conductive semiconductor layer 218a of 3D-mode P-GaN by 10% or more in the x-axis direction. The parallel mismatch is a strain relaxation parameter that represents the degree of strain maintained when the second-first conductive semiconductor layer 216 and the second-second conductive semiconductor layer 218a of 3D-mode P-GaN are grown, and the parallel mismatch can solve dislocations D and defects. Here, because the change amount of the x-axis is small, the change in strain can be minimized, and minimizing the change amount can be defined as maintaining or not releasing the strain. Maintaining the strain can reduce the difference in the A-plane lattice constant between the second-first conductive semiconductor layer 216 of AlGaN and the second-second conductive semiconductor layer 218a of 3D-mode P-GaN.

[0203] The thickness of the second-second conductive semiconductor layer 218a can be in the range of 10 nm to 50 nm. When the thickness of the second-second conductive semiconductor layer 218a is less than 10 nm, it may be difficult to bend the dislocation D from the second-first conductive semiconductor layer 216 and the dislocation D may propagate to the second-third conductive semiconductor layer 218B. Here, the dislocation D propagating to the second-third conductive semiconductor layer 218b may cause V-shaped pits or cracks. V-shaped pits or cracks may cause leakage current. When the thickness of the second-second conductive semiconductor layer 218a exceeds 50 nm, defects may occur inside the second-second conductive semiconductor layer 218a that grows in an island-like three-dimensional manner.

[0204] The roughness (root mean square (RMS)) of the interface between the second-second conductive semiconductor layer 218a and the second-third conductive semiconductor layer 218b can be 1.0 nm or greater, for example, in the range of 1.0 nm to 5.0 nm. The second-second conductive semiconductor layer 218a of the present embodiment can grow three-dimensionally in an island shape to include a roughness (RMS) of 1.0 nm or greater at the interface between the second-second conductive semiconductor layer 218a and the second-second conductive semiconductor layer 218b.

[0205] The doping concentration of the second-second conductive semiconductor layer 218a can correspond to the doping concentration of each of the second-first conductive semiconductor layer 216 and the EBL 230. For example, the doping concentration of the second-second conductive semiconductor layer 218a can be in the range of 1E19 to 5E19. The second-second conductive semiconductor layer 218a can have a lower doping concentration than the second-third conductive semiconductor layer 218b. The doping concentration of the second-third conductive semiconductor layer 218b can be higher than the doping concentration of each of the second-second conductive semiconductor layer 218a, the second-first conductive semiconductor layer 216, and the EBL 230. For example, the doping concentration of the second-third conductive semiconductor layer 218b can be in the range of 5E19 to 1E20. The second-third conductive semiconductor layer 218b can have a doping concentration higher than each of the second-second conductive semiconductor layer 218a, the second-first conductive semiconductor layer 216, and the EBL 230, thereby achieving an ohmic contact with the second electrode 253.

[0206] The second-third conductive semiconductor layer 218b can be disposed on the second-second conductive semiconductor layer 218a. For ohmic contact with the second-first conductive semiconductor layer 216 and the second electrode 253, the second-third conductive semiconductor layer 218b can be made of GaN including a second conductive type dopant, but the present invention is not limited thereto. The second-third conductive semiconductor layer 218b can have a flat surface in direct contact with the second electrode 253. To this end, the second-third conductive semiconductor layer 218b can be formed by a 3D mode growth method. Figure 19 is a photograph showing the surface of the second-third conductive semiconductor layer 218b according to an embodiment. The second-third conductive semiconductor layer 218b of the present embodiment can have a thickness in the range of 100 nm to 300 nm.

[0207] When the thickness of the second-third conductive semiconductor layer 218b is less than 100 nm, it may be difficult for the second-third conductive semiconductor layer 218b to have an ohmic contact with the second electrode 253. However, when the thickness of the second-third conductive semiconductor layer 218b exceeds 300 nm, new defects may occur within the second-third conductive semiconductor layer 218b.

[0208] The second - third conductive semiconductor layer 218b may have a surface roughness (RMS) of 1 nm or less, for example, in the range of 0.1 nm to 1.0 nm. The second - second conductive semiconductor layer 216b of the present embodiment may have a surface roughness (RMS) of 1 nm or less to improve the contact reliability with the subsequently formed second electrode 253. Figure 1 and Figure 2 The configuration of the above - described embodiment can be directly applied to the configuration of the second - first to second - third conductive semiconductor layers.

[0209] Here, the first conductive semiconductor layer 212 is an n - type semiconductor layer, and the second - first conductive semiconductor layer 216, the second - second conductive semiconductor layer 218a, and the second - third conductive semiconductor layer 218b have been described as p - type semiconductor layers, but the present invention is not limited thereto. The light - emitting structure 210 can be implemented with any one of an n - p junction structure, a p - n junction structure, an n - p - n junction structure, and a p - n - p junction structure.

[0210] The first electrode 251 may be disposed on the first conductive semiconductor layer 212. The first electrode 251 may be electrically connected to the first conductive semiconductor layer 212. The first electrode 251 may be electrically insulated from the second electrode 253. The first electrode 251 may be made of a conductive oxide, a conductive nitride, or a metal. For example, the first electrode 251 may include at least one material among ITO, ITON, IZO, IZON, AZO, AGZO, IZTO, IAZO, IGZO, IGTO, ATO, GZO, IZON, ZnO, IrOx, RuOx, NiO, Au, Cu, Ni, Ti, Ti - W, Cr, W, Pt, V, Fe, and Mo, and may be formed as a single layer or a multi - layer.

[0211] The second electrode 253 may be disposed on the second - third conductive semiconductor layer 218b. The second electrode 253 may be in ohmic contact with the second - third conductive semiconductor layer 218b. The second electrode 253 may be made of a conductive oxide, a conductive nitride, or a metal. For example, the second electrode 253 may include at least one material among ITO, ITON, IZO, IZON, AZO, AGZO, IZTO, IAZO, IGZO, IGTO, ATO, GZO, IZON, ZnO, IrOx, RuOx, NiO, Au, Cu, Ni, Ti, Ti - W, Cr, W, Pt, V, Fe, and Mo, and may be formed as a single layer or a multi - layer.

[0212] According to this embodiment, the dislocation D from the second-first conductive semiconductor layer 216 is bent by the three-dimensionally grown second-second conductive semiconductor layer 218a so that the defect can be resolved. That is, according to this embodiment, the second-second conductive semiconductor layer 218a prevents the dislocation D from propagating to the subsequently grown second-third conductive semiconductor layer 218b, so that the TDD can be reduced at the interface between the second-second conductive semiconductor layer 218a and the second-third conductive semiconductor layer 218b.

[0213] According to this embodiment, the second-second conductive semiconductor layer 218a grown in a 3D mode is disposed on the second-first conductive semiconductor layer 216 to bend the dislocation D from the second-first conductive semiconductor layer 216 so that the crystallinity can be improved.

[0214] According to this embodiment, the propagation of the dislocation D is resolved to reduce the TDD of the final semiconductor layer, so that the light emission efficiency can be improved.

[0215] According to this embodiment, the doping concentration of the second conductive type dopant in each of the second-first conductive semiconductor layer 216 and the EBL 230 is kept constant, so that the reverse diffusion of the p-dopant from the EBL to the active layer is resolved to improve the light extraction efficiency.

[0216] According to this embodiment, the dislocation D or the defect is resolved so that the degradation of the electrical characteristics caused by the leakage current can be improved.

[0217] According to this embodiment, the dislocation D or the defect is resolved so that the TE polarization of the UV light emitting device can be fully realized.

[0218] Figures 20 to 23 is a cross-sectional view illustrating a method of manufacturing a semiconductor device according to an embodiment.

[0219] Reference Figure 20 and Figure 21 According to this embodiment, the method of manufacturing a semiconductor device may include forming an AlN template 211, a first conductive semiconductor layer 212, an active layer 214, an EBL 230, a second-first conductive semiconductor layer 216, a second-second conductive semiconductor layer 218a, and a second-third conductive semiconductor layer 218b on a substrate 201.

[0220] The materials of the substrate 201, the AlN template 211, the first conductive semiconductor layer 212, the active layer 214, the EBL 230, and the second-first conductive semiconductor layer 216 and the connection relationship therebetween may adopt Figure 14 and 15 technical features.

[0221] The AlN template 211, the first conductive semiconductor layer 212, the active layer 214, the EBL 230, the second-first conductive semiconductor layer 216, and the second-second conductive semiconductor layer 218a can be formed by metal-organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), etc., but the present invention is not limited thereto.

[0222] The second-second conductive semiconductor layer 218a can be formed on the second-first conductive semiconductor layer 216. The second-second conductive semiconductor layer 218a can include a function of bending dislocations from the second-first conductive semiconductor layer 216. To this end, the second-second conductive semiconductor layer 218a can grow three-dimensionally. The second-second conductive semiconductor layer 218a can have a function of buffering the subsequently grown second-third conductive semiconductor layer 218b. The second-second conductive semiconductor layer 218a can solve defects by bending dislocations from the second-first conductive semiconductor layer 216, thereby solving the reverse diffusion of the second conductive type dopant from the EBL 230 to the active layer 214. According to this embodiment, stable doping of the second-first conductive semiconductor layer 216 can be achieved.

[0223] The second-second conductive semiconductor layer 218a can be formed of GaN including a second conductive type dopant, but the present invention is not limited thereto. The second-second conductive semiconductor layer 218a can grow three-dimensionally to bend dislocations from the second-first conductive semiconductor layer 216. That is, the second-second conductive semiconductor layer 218a can improve the propagation of dislocations toward the second-third conductive semiconductor layer 218b and reduce the TDD at the interface with the second-third conductive semiconductor layer 218b by bending dislocations from the second-first conductive semiconductor layer 216 from the C-plane direction to the A-plane direction.

[0224] The thickness of the second-second conductive semiconductor layer 218a can be in the range of 10 nm to 50 nm. When the thickness of the second-second conductive semiconductor layer 218a is less than 10 nm, it may be difficult to bend dislocations from the second-first conductive semiconductor layer 216, and the dislocations may propagate to the second-third conductive semiconductor layer 218b. Here, the dislocations propagating to the second-third conductive semiconductor layer 218b may cause V-shaped pits or cracks. The V-shaped pits or cracks may cause leakage current. When the thickness of the second-second conductive semiconductor layer 218a exceeds 50 nm, defects may occur inside the second-second conductive semiconductor layer 218a that grows three-dimensionally in an island shape.

[0225] The roughness (RMS) of the interface between the second-second conductive semiconductor layer 218a and the second-third conductive semiconductor layer 218b may be 1.0 nm or greater, for example, in the range of 1.0 nm to 5.0 nm. The second-second conductive semiconductor layer 218a of the present embodiment may grow three-dimensionally in an island shape to include an interface roughness (RMS) between the second-second conductive semiconductor layer 218a and the second-third conductive semiconductor layer 218b greater than 1.0 nm.

[0226] The doping concentration of the second-second conductive semiconductor layer 218a may correspond to the doping concentration of each of the second-first conductive semiconductor layer 216 and the EBL 230. For example, the doping concentration of the second-second conductive semiconductor layer 218a may be in the range of 1E19 to 5E19. The second-second conductive semiconductor layer 218a may have a lower doping concentration than the second-third conductive semiconductor layer 218b. The doping concentration of the second-third conductive semiconductor layer 218b may be higher than the doping concentration of each of the second-second conductive semiconductor layer 218a, the second-first conductive semiconductor layer 216, and the EBL 230. For example, the doping concentration of the second-third conductive semiconductor layer 218b may be in the range of 5E19 to 1E20. The second-third conductive semiconductor layer 218b may have a higher doping concentration than the doping concentration of each of the second-second conductive semiconductor layer 218a, the second-first conductive semiconductor layer 216, and the EBL 230, thereby achieving an ohmic contact with the second electrode 253.

[0227] The second-third conductive semiconductor layer 218b may be disposed on the second-second conductive semiconductor layer 218a. For ohmic contact with the second-first conductive semiconductor layer 216 and the second electrode 253, the second-third conductive semiconductor layer 218b may be made of GaN including a second-conductive type dopant, but the present invention is not limited thereto. The second-third conductive semiconductor layer 218b may have a flat surface in direct contact with the second electrode 253. To this end, the second-third conductive semiconductor layer 218b may be formed by a 2D growth method. Figure 19 is a photograph showing the surface of the second-third conductive semiconductor layer 218b according to an embodiment. The second-third conductive semiconductor layer 218b of the present embodiment may have a thickness in the range of 100 nm to 300 nm.

[0228] When the thickness of the second-third conductive semiconductor layer 218b is less than 100 nm, it may be difficult for the second-third conductive semiconductor layer 218b to have an ohmic contact with the second electrode 253, and when the thickness of the second-third conductive semiconductor layer 218b exceeds 300 nm, new defects may occur within the second-third conductive semiconductor layer 218b.

[0229] The second - third conductive semiconductor layer 218b may have a surface roughness (RMS) of 1 nm or less, for example, in the range of 0.1 nm to 1.0 nm. The second - second conductive semiconductor layer 216b of the present embodiment may have a surface roughness (RMS) of 1 nm or less to improve the contact reliability with the subsequently formed second electrode 253.

[0230] Here, the first conductive semiconductor layer 212 is an n - type semiconductor layer, and the second - first conductive semiconductor layer 216, the second - second conductive semiconductor layer 218a, and the second - third conductive semiconductor layer 218b have been described as p - type semiconductor layers, but the present invention is not limited thereto. The light - emitting structure 210 can be implemented with any one of an n - p junction structure, a p - n junction structure, an n - p - n junction structure, and a p - n - p junction structure.

[0231] Reference Figure 22 , the first electrode 251 and the second electrode 253 can be formed on the light - emitting structure 210. In the light - emitting structure 210, a part of the first conductive semiconductor layer 212 can be exposed from the active layer 214, the EBL 230, the second - first conductive semiconductor layer 216, the second - second conductive semiconductor layer 218a, and the second - third conductive semiconductor layer 218b by mesa etching.

[0232] The first electrode 251 can be formed on the exposed first conductive semiconductor layer 212. The first electrode 251 can be electrically connected to the first conductive semiconductor layer 212. The first electrode 251 can be electrically insulated from the second electrode 253.

[0233] The second electrode 253 can be formed on the second - first conductive semiconductor layer 216. The second electrode 253 can be electrically connected to the second - first conductive semiconductor layer 216.

[0234] Each of the first electrode 251 and the second electrode 253 can be a conductive oxide, a conductive nitride, or a metal. For example, each of the first electrode 251 and the second electrode 253 can include at least one material among ITO, ITON, IZO, IZON, AZO, AGZO, IZTO, IAZO, IGZO, IGTO, ATO, GZO, IZON, ZnO, IrOx, RuOx, NiO, Au, Cu, Ni, Ti, Ti - W, Cr, W, Pt, V, Fe, and Mo, and can be formed as a single layer or a multilayer.

[0235] Reference Figure 23, The structure according to this embodiment may be a flip-chip structure, in which the first electrode 251 and the second electrode 253 are disposed at the lower part. The first insulating layer 261 may expose a part of the lower surface of each of the first electrode 251 and the second electrode 253, and may be formed on the light-emitting structure 210. The first insulating layer 261 may be in contact with the lower part of the light-emitting structure 210 where the first and second electrodes 251 and 253 are disposed.

[0236] The first connection electrode 271 and the second connection electrode 273 may be respectively formed on the lower surfaces of the first electrode 251 and the second electrode 253 exposed from the first insulating layer 261. The first connection electrode 271 and the second connection electrode 273 may be formed by an electroplating process, but the present invention is not limited thereto. The first insulating layer 261 may be an oxide or a nitride. For example, the first insulating layer 261 may be formed of at least one selected from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc.

[0237] Each of the first connection electrode 271 and the second connection electrode 273 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. The first connection electrode 271 and the second connection electrode 273 are made to be a single layer or multiple layers formed of a metal, an alloy, or a transparent conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, etc.

[0238] The second insulating layer 263 may be formed under the first insulating layer 261 and may be in direct contact with the first insulating layer 261. The second insulating layer 263 may expose the lower parts of the first connection electrode 271 and the second connection electrode 273 and may be formed on the sides of the first connection electrode 271 and the second connection electrode 273. The second insulating layer 263 may be formed by adding a thermal diffusion agent to a resin material such as a silicone resin or an epoxy resin. The thermal diffusion agent may include at least one material among oxides, nitrides, fluorides, and sulfides containing Al, Cr, Si, Ti, Zn, or Zr. For example, a ceramic material. The thermal diffusion agent may be defined as powder particles, granules, fillers, or additives having a predetermined size. The second insulating layer 263 may be omitted.

[0239] The first and second pads 281 and 283 may be formed on the first and second connection electrodes 271 and 273 exposed from the second insulating layer 263. Each of the first and second pads 281 and 283 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. The first and second pads 281 and 283 are made to be a single layer or multiple layers formed of a metal, an alloy, or a transparent conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, etc.

[0240] This embodiment includes the substrate 201 disposed above the first conductive semiconductor layer 212, but the present invention is not limited thereto. For example, the substrate 201 may be removed by the LLO process. Here, the LLO process is a process of irradiating a laser onto the lower surface of the substrate 201 to delaminate the substrate 201 from the light-emitting structure 210.

[0241] According to this embodiment, the second-second conductive semiconductor layer 218a grown in a 3D mode is disposed on the second-first conductive semiconductor layer 216 to bend the dislocations from the second-first conductive semiconductor layer 216 so that the crystallinity can be improved.

[0242] According to this embodiment, the propagation of dislocations is solved to reduce the TDD of the final semiconductor layer, so that the light-emitting efficiency can be improved.

[0243] According to this embodiment, the doping concentration of the second conductive type dopant in each of the second-first conductive semiconductor layer 216 and the EBL 230 is kept constant, so that the reverse diffusion of the p-dopant from the EBL to the active layer is solved to improve the light extraction efficiency.

[0244] According to this embodiment, dislocations or defects are solved, so that the deterioration of the electrical characteristics caused by leakage current can be improved.

[0245] According to this embodiment, dislocations or defects are solved, so that the TE polarization of the UV light-emitting device can be fully achieved.

[0246] Figure 24 It is a cross-sectional view illustrating a light-emitting device package according to an embodiment.

[0247] As Figure 24 shown, the light-emitting device package 300 of this embodiment may include a light-emitting device 200, a package body 301, a heat dissipation frame 310, a protection element 360, and first and second lead frames 320 and 330.

[0248] The encapsulation body 301 may include at least one of a light-transmissive material, a reflective material, and an insulating material. The encapsulation body 301 may include a material having a reflectance higher than the transmittance for light emitted from the light-emitting device 200. The encapsulation body 301 may be formed of a resin-based insulating material. For example, the encapsulation body 301 may be formed of at least one of a resin material such as polyphthalamide (PPA), an epoxy resin, or a silicone resin material, Si, a metal material, photosensitive glass (PSG), Al2O3, and a printed circuit board (PCB). For example, the encapsulation body 301 may have a square top view shape, but the present invention is not limited thereto. The top view shape of the encapsulation body 301 may have a circular or polygonal shape.

[0249] The encapsulation body 301 may be coupled to the first and second lead frames 320 and 330. The body 220 may include a cavity 303 for exposing a part of the upper surface of each of the first and second lead frames 320 and 330. The cavity 303 may expose a part of the upper surface of the first lead frame 320 and a part of the upper surface of the second lead frame 330.

[0250] The first lead frame 320 and the second lead frame 330 may be spaced apart by a predetermined distance to be coupled to the encapsulation body 301. The light-emitting device 200 and the protection element 360 may be disposed at the second lead frame 330, and the first wire 200W1 of the light-emitting device 200 and the wire 360W of the protection element 360 may be connected at the first lead frame 320, but the present invention is not limited thereto. The first lead frame 320 and the second lead frame 330 may include a conductive material. For example, each of the first lead frame 320 and the second lead frame 330 may be made of at least one of Ti, Cu, Ni, Au, Cr, tantalum (Ta), platinum (Pt), Sn, Ag, phosphorus (P), iron (Fe), Zn, and Al, and may be formed of multiple layers. For example, each of the first and second lead frames 320 and 330 in the present embodiment may include a base layer containing Cu and an antioxidant layer containing Ag covering the base layer, but the present invention is not limited thereto.

[0251] The second lead frame 330 may include a first lead portion 331a that is exposed in the central region of the cavity 303; a second lead portion 331b that is configured to correspond to the shape of the first lead frame 320 by being diagonally symmetric with the first lead frame 320; and a third lead portion 331c that is disposed in the corner region of the cavity 303 where the protection element 360 is mounted and the diagonal corner region of the cavity 303. The shape of each of the first to third lead portions 331a, 331b, and 331c including the area and width may be variously modified on the upper surface of the second lead frame 330 exposed at the lower surface of the cavity 303.

[0252] The first lead frame 320 may have a bent structure diagonally symmetric to the second lead portion 331b, but the present invention is not limited thereto.

[0253] The heat dissipation frame 310 may include a first heat dissipation electrode 311 and a second heat dissipation electrode 313. The first heat dissipation electrode 311 may include a first pad portion 311a connected to the first wire 200W1, and the second heat dissipation electrode 313 may include a second pad portion 313a connected to the second wire 200W2.

[0254] The light-emitting device 200 may be mounted on the heat dissipation frame 310. Although this embodiment limits the light-emitting device package to include the heat dissipation frame 310, the heat dissipation frame 310 may be omitted. When the heat dissipation frame 310 is omitted, the light-emitting device 200 may be disposed on the package body 301. The light-emitting device 200 may include Figures 1 to 23 technical features.

[0255] The protection element 360 may be disposed on the third lead portion 331c. The protection element 360 may be disposed on the upper surface of the second lead frame 330 exposed from the package body 301. The protection element 360 may be a Zener diode, a thyristor, a transient voltage suppressor (TVS), etc., but the present invention is not limited thereto. The protection element 360 of this embodiment will be described as an example of a Zener diode for protecting the light-emitting device 200 from electrostatic discharge (ESD). The protection element 360 may be connected to the first lead frame 310 through a wire.

[0256] The light-emitting device package of this embodiment may include a light-emitting device 200 that improves the difference in lattice constants between semiconductor layers, thereby fully realizing the TE polarization of the UV light-emitting device.

[0257] The above light-emitting device is configured in a light-emitting device package and can therefore be used as a light source for an illumination system. For example, the light-emitting device package may include a body having a cavity and lead electrodes coupled to the body, and the light-emitting device may be disposed on the body to be electrically connected to the lead electrodes.

[0258] For example, the light-emitting device may be used as a light source for an image display device or a lighting device.

[0259] When the light-emitting device is used as a backlight unit of an image display device, the light-emitting device may be used as an edge-type backlight unit or a direct-type backlight unit, and when using the light-emitting device as a light source of a lighting device, the semiconductor device may be used as a lighting device or a bulb-type device, and may also be used as a light source of a mobile terminal.

[0260] In addition to the above-mentioned light-emitting diodes, the light-emitting device further includes a laser diode.

[0261] Similar to the light-emitting device, the laser diode may include a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer having the above structure. In addition, the laser diode uses electroluminescence phenomenon, in which light is emitted when current flows after the combination of a p-type first-conductivity-type semiconductor and an n-type second-conductivity-type semiconductor. However, there are differences in the directionality and phase of the emitted light between the light-emitting device and the laser diode. That is, the laser diode can emit light with the same phase in the same direction at a specific single wavelength (i.e., a monochromatic light beam) by using the phenomenon called stimulated emission and the phenomenon of constructive interference. And, by utilizing the above characteristics, the laser diode can be used in optical communication, medical devices, semiconductor processing equipment, etc.

[0262] Examples of the light-receiving device may include a photodetector, which is a transducer that detects light and converts the intensity of the detected light into an electrical signal. Such a photodetector may include a photocell (silicon or selenium), a photoconductive element (cadmium sulfide or cadmium selenide), a photodiode (PD) (e.g., a PD having a peak wavelength in the visible-blind spectral region or the true-blind spectral region), a phototransistor, a photomultiplier tube, a phototube (vacuum or gas-filled), an infrared (IR) detector, etc., but the present invention is not limited thereto.

[0263] In addition, semiconductor devices such as photodetectors can be manufactured using direct bandgap semiconductors, which generally have excellent light conversion efficiency. Alternatively, photodetectors have various structures and include pin-type photodetectors using the pn junction of the most common structure, Schottky photodetectors using Schottky junctions, and metal-semiconductor-metal (MSM)-type photodetectors.

[0264] Similar to the light-emitting device, the PD may include a first-conductive semiconductor layer, an active layer, and a second-conductive semiconductor layer having the above structure, and may be formed by a pn junction or a pin structure. The PD operates by applying a reverse bias or a zero bias, and when light enters the photodiode, electrons and holes are generated, and thus current flows. At this time, the amount of current can be approximately proportional to the intensity of the light incident on the PD.

[0265] A photovoltaic cell or a solar cell is a PD that converts light into current. Similar to the light-emitting device, the solar cell may include a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer having the above structure.

[0266] In addition, the solar cell can be used as a rectifier of an electronic circuit by using the rectifying characteristics of an ordinary diode with a pn junction, and can be applied to an oscillation circuit, etc. for use in a microwave circuit.

[0267] In addition, the above semiconductor device is not necessarily implemented only by semiconductors, and may also include metal materials in some cases. For example, a semiconductor device such as a light receiving device can be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, and As, or using a semiconductor material doped with a p-type or n-type dopant or an intrinsic semiconductor material. Although the present invention has been mainly described with reference to exemplary embodiments, it should be understood that the present invention is for illustrative purposes only and is not limited to the disclosed exemplary embodiments, and those skilled in the art in the field to which the present invention pertains can design various modifications and applications without departing from the gist of the present invention. For example, each component specifically shown in the embodiments can be modified and implemented. It should be understood that the differences related to these modifications and applications will fall within the scope of the present invention defined by the appended claims.

Claims

1. A semiconductor device, comprising: a light-emitting structure including a first-conductive semiconductor layer, a second-conductive semiconductor layer, an active layer, and an intermediate layer, the active layer being disposed between the first-conductive semiconductor layer and the second-conductive semiconductor layer, and the intermediate layer being disposed between the first-conductive semiconductor layer and the active layer or within the first-conductive semiconductor layer, wherein the first-conductive semiconductor layer, the intermediate layer, the active layer, and the second-conductive semiconductor layer include aluminum; and the intermediate layer includes a first intermediate layer and a second intermediate layer, the first intermediate layer having an aluminum composition lower than that of the first-conductive semiconductor layer, and the second intermediate layer having an aluminum composition higher than that of the first intermediate layer.

2. The semiconductor device according to claim 1, wherein: a plurality of first intermediate layers and a plurality of second intermediate layers are alternately stacked; and the thickness of the first intermediate layer is greater than the thickness of the second intermediate layer.

3. The semiconductor device according to claim 1, wherein: the thickness ratio of the first intermediate layer to the second intermediate layer is in the range of 2:1 to 6:1; and the total thickness of the intermediate layer is in the range of 50 nm to 1000 nm.

4. The semiconductor device according to claim 1, wherein: the aluminum composition of the first intermediate layer is in the range of 30% to 60%; and the aluminum composition of the second intermediate layer is in the range of 60% to 100%.

5. The semiconductor device according to claim 1, wherein: the first-conductive semiconductor layer includes a first-first-conductive semiconductor layer and a first-second-conductive semiconductor layer; and the intermediate layer is disposed between the first-first-conductive semiconductor layer and the first-second-conductive semiconductor layer.

6. The semiconductor device according to claim 5, wherein: the first-second-conductive semiconductor layer is disposed closer to the active layer than the first-first-conductive semiconductor layer; the aluminum composition of the first-second-conductive semiconductor layer is lower than that of the first-first-conductive semiconductor layer; and the thickness of the first-first-conductive semiconductor layer is greater than the thickness of the first-second-conductive semiconductor layer.

7. The semiconductor device according to claim 1, wherein, the second-conductive semiconductor layer includes: a second-first-conductive semiconductor layer; a second-second-conductive semiconductor layer disposed on the second-first-conductive semiconductor layer; and a second-third-conductive semiconductor layer disposed on the second-second-conductive semiconductor layer, wherein the root mean square roughness (RMS) of the interface between the second-second-conductive semiconductor layer and the second-third-conductive semiconductor layer is greater than the root mean square roughness (RMS) of the second-third-conductive semiconductor layer.

8. The semiconductor device according to claim 5, wherein, the light-emitting structure includes a groove that is disposed through the second-conductive semiconductor layer and the active layer in the first-second-conductive semiconductor layer; The semiconductor device includes a first conductive layer, and the first conductive layer is disposed in the groove.

9. The semiconductor device according to claim 1, wherein, the thickness of the first intermediate layer ranges from 1 nm to 10 nm; and the thickness of the second intermediate layer ranges from 0.1 nm to 2.0 nm.

10. A semiconductor device package, comprising: a body; and the semiconductor device according to any one of claims 1-9, and the semiconductor device is disposed on the body.

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