Thin film and preparation method thereof, photoelectric device and display device

Abstract

The invention discloses a thin film and a preparation method thereof, a photoelectric device and a display device, the material of the thin film comprises a main body material and a first material, and the relative magnetic susceptibility of the first material is less than-1.0 * 10 <-5 > cm. The invention provides a thin film which has the characteristics of conductivity and magnetic interference resistance, not only has carrier transport performance, but also can reduce or eliminate the possibility that the thin film is magnetized in the long-term action process of an electromagnetic field, reduces attenuation of a thin film material caused by magnetization, and is beneficial to prolonging the service life of the thin film. And the performance stability is maintained.

Description

Technical Field

[0001] The present application relates to the field of semiconductors, and in particular to a thin film and a preparation method thereof, an optoelectronic device and a display device. Background Art

[0002] Semiconductor materials refer to materials with semiconductor properties. Thin films made of semiconductor materials have the ability to transport carriers.

[0003] However, under the long-term action of external electric or magnetic fields, such films will gradually become magnetized, causing the movement direction of the carriers flowing inside to deviate, thereby causing the carrier transport performance of the film to attenuate. Summary of the invention

[0004] In view of this, the present application provides a thin film and a method for preparing the same, an optoelectronic device and a display device.

[0005] The embodiment of the present application is implemented as follows:

[0006] In a first aspect, the present application provides a thin film, wherein the material of the thin film comprises a main material and a first material, wherein the relative magnetic susceptibility of the first material is less than -1.0×10 -5 cm, the main material includes N-type semiconductor material or P-type semiconductor material.

[0007] In a second aspect, the present application provides a method for preparing a thin film, comprising the following steps:

[0008] Provide a main material and a first material, wherein the relative magnetic susceptibility of the first material is less than -1.0×10 -5 cm;

[0009] Depositing the main material and the first material to obtain a thin film;

[0010] Wherein, the main material includes N-type semiconductor material or P-type semiconductor material.

[0011] In a third aspect, the present application provides a photoelectric device, comprising an anode, at least one carrier functional layer and a cathode, wherein the carrier functional layer comprises the film, or comprises a film produced by the preparation method.

[0012] In a fourth aspect, the present application provides a display device, comprising the optoelectronic device.

[0013] The present application provides a film having electrical conductivity and anti-magnetic interference properties. The film not only has carrier transport performance, but also can reduce or eliminate the possibility of the film being magnetized during the long-term action of the electromagnetic field, reduce the attenuation of the film material caused by magnetization, and help to extend the service life of the film and maintain its performance stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0015] Figure 1 It is a schematic diagram of the structure of a film proposed in one embodiment of the present application;

[0016] Figure 2 is a schematic structural diagram of a film proposed in another embodiment of the present application;

[0017] Figure 3 is a schematic structural diagram of an optoelectronic device proposed in one embodiment of the present application;

[0018] Figure 4 is a schematic structural diagram of a photoelectric device proposed in another embodiment of the present application;

[0019] Figure 5 It is a schematic flow chart of a method for preparing a thin film proposed in one embodiment of the present application;

[0020] Reference numerals:

[0021] 100-thin film; 1-base film; 21-first anti-magnetic film; 22-second anti-magnetic film; 200-photoelectric device; 10-anode; 20-electron transport layer; 30-light-emitting layer; 40-cathode; 50-hole injection layer; 60-hole transport layer. DETAILED DESCRIPTION

[0022] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0023] In this application, unless otherwise specified, the directional words used, such as "upper" and "lower", refer specifically to the directions of the drawings in the accompanying drawings. In addition, in the description of the specification of this application, the term "including" means "including but not limited to".

[0024] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0025] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0026] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0027] In the first aspect, the present application embodiment provides a film 100, see Figure 1 and 2 The material of the film 100 includes a main material and a first material, and the relative magnetic susceptibility of the first material is less than -1.0×10 -5 cm.

[0028] The present application provides a film 100, in which the first material contained in the film 100 has anti-magnetic properties. The film 100 has electrical conductivity and anti-magnetic interference properties. It not only has carrier transmission performance, but also can reduce or eliminate the possibility of the film 100 being magnetized during the long-term action of the electromagnetic field, reduce the attenuation of the film 100 material caused by magnetization, help to extend the service life of the film 100, and maintain its performance stability.

[0029] The film 100 has carrier transport properties and can be used to prepare a carrier functional layer, such as a hole functional layer or an electron functional layer, of the optoelectronic device 200. Specifically, based on different host materials, the film 100 has different properties and is thus suitable for different carrier functional layers.

[0030] In some embodiments, the main material includes an N-type semiconductor material, which is also called an electron transport material, and refers to a semiconductor material with electron transport properties; the N-type semiconductor material may include but is not limited to at least one of metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials, and the metal oxide is selected from ZnO, TiO 2 SnO 2 、ITO、Fe 2 O 3 CrO 3 , WO 3 , CdO, CuO, MoO 2 At least one of the following; the metal oxide in the doped metal oxide is selected from ZnO, TiO 2 SnO 2 、ITO、Fe 2 O 3 CrO 3 , WO 3 , CdO, CuO, MoO 2 At least one of the doping elements is selected from at least one of Al, Mg, Li, In, and Ga; the II-VI semiconductor material is selected from at least one of ZnS, ZnSe, and CdS; the III-V semiconductor material is selected from at least one of InP and GaP; the I-III-VI semiconductor material is selected from at least one of CuInS and CuGaS. When the main material is selected from an N-type semiconductor material, the film 100 can be used to prepare an electronic functional layer of an optoelectronic device 200.

[0031] In some other embodiments, the main material includes a P-type semiconductor material, which is also called a hole transport material, and refers to a semiconductor material with hole transport properties; the P-type semiconductor material may include but is not limited to 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), N,N'-diphenyl-N, N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), tris(3 -methylphenylphenylamino)-triphenylamine (m-MTDATA), poly(p-phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N '-Tetraarylbenzidine, poly(N-vinylcarbazole) (PVK) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB), spiro-NPB, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO 3 When the host material is selected from a P-type semiconductor material, the film 100 can be used to prepare a hole functional layer of an optoelectronic device 200.

[0032] In some embodiments, the first material includes one or more of pyrolytic graphite, bismuth, mercury, diamond, lead, graphite, and copper. The relative magnetic susceptibility of pyrolytic graphite is about -40.9×10 -5 cm, the relative magnetic susceptibility of bismuth is about -16.6×10 -5 cm, the relative magnetic susceptibility of mercury is about -2.9×10 -5 cm, the relative magnetic susceptibility of diamond is about -2.1×10 -5 cm, the relative magnetic susceptibility of lead is about -1.8×10 -5cm, the relative magnetic susceptibility of graphite is about -1.6×10 -5 cm, the relative magnetic susceptibility of copper is about -1.0×10 -5 cm, these materials not only have high anti-magnetism, but also have good electrical conductivity, which helps to improve the anti-magnetism of the film 100, while ensuring that the film 100 has good carrier transport performance. In other embodiments, the first material is selected from one or more of pyrolytic graphite, bismuth, and mercury. These materials have both high electrical conductivity and anti-magnetism, which helps to better improve the anti-magnetism and carrier transport performance of the film 100.

[0033] The film 100 can be implemented in various forms. Figure 1 As shown, in the first embodiment, the film 100 is a single-layer film made of a film material. For ease of description, the film 100 of this embodiment is named as a first film. Specifically, the material of the first film includes a first mixture formed by mixing the main material and the first material. After the first material and the main material are evenly mixed, the main material and the first material are evenly distributed, so that at least a portion of the main material is in a space where the first material is dispersed all around. Since the portion of the main material is surrounded by the first material, it is in an anti-magnetic field environment, which effectively avoids interference from external electromagnetic fields and helps to improve the anti-magnetic properties of the film 100.

[0034] In some embodiments, the material of the first film, that is, the first mixture of the main material and the first material, has a molar ratio of the main material to the first material of 100:(1-10); for example, it can be 100:1, 100:2, 100:3, 100:4, 100:5, 100:6, 100:7, 100:8, 100:9, 100:10 and values ​​between any two of the above values. Controlling the doping amount of the first material in the first film within this range helps to improve the anti-magnetic properties and electrical conductivity of the film 100 in a balanced manner.

[0035] like Figure 2 As shown, the film 100 is a composite film layer composed of multiple film layers stacked together. The film 100 includes a first anti-magnetic film 21, a base film 1, and a second anti-magnetic film 22 stacked together. The material of the first anti-magnetic film 21 includes the first material, and the material of the second anti-magnetic film 22 includes the first material. The materials of the two anti-magnetic films can be the same or different. The base film 1 is wrapped by the anti-magnetic films on both sides, so as to effectively avoid the interference of the external electromagnetic field and reduce or eliminate the possibility of the film 100 being magnetized during the long-term action of the electromagnetic field.

[0036] Based on the above-mentioned solution of the composite film layer, a second film of the second embodiment is proposed. In the second film, the material of the base film 1 includes the main material.

[0037] Based on the above-mentioned scheme of the composite film layer, a third film of the third embodiment can also be proposed, in which the material of the base film 1 includes a second mixture formed by mixing the main material and the first material. In some embodiments, the material of the base film, that is, the second mixture of the main material and the first material, the molar ratio of the main material to the first material is 100: (1-10); for example, it can be 100:1, 100:2, 100:3, 100:4, 100:5, 100:6, 100:7, 100:8, 100:9, 100:10 and values ​​between any two of the above values. Controlling the doping amount of the first material in the base film within this range helps to improve the anti-magnetic properties and electrical conductivity of the third film in a balanced manner.

[0038] In some embodiments, the total thickness of the first anti-magnetic film 21 and the second anti-magnetic film 22 accounts for 18% to 55% of the total thickness of the film 100; for example, it can be 18%, 20%, 30%, 32%, 35%, 36%, 37%, 40%, 45%, 50%, 55% and any value between the above two values. Controlling the thickness of the anti-magnetic film within this range helps to improve the anti-magnetic properties and electrical conductivity of the film 100 in a balanced manner. In other embodiments, the percentage is 30% to 40%.

[0039] In some embodiments, the thickness of the first anti-magnetic film 21 is 10-30 nm; for example, it can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, and any value between the above two values. Controlling the thickness of the first anti-magnetic film 21 within this range helps to improve the anti-magnetic property of the film 100 as much as possible while ensuring the light transmittance and carrier transport performance of the film 100.

[0040] In some embodiments, the thickness of the second anti-magnetic film 22 is 10-30 nm; for example, it can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, and any value between the above two values. Controlling the thickness of the second anti-magnetic film 22 within this range helps to improve the anti-magnetic property of the film 100 as much as possible while ensuring the light transmittance and carrier transport performance of the film 100.

[0041] In some embodiments, the thickness of the base film 1 is 5-55 nm; for example, it can be 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, and any value between the above two values. Controlling the thickness of the base film 1 within this range helps to improve the carrier transport performance of the film 100.

[0042] In some embodiments, the thickness of the base film 1 is 5 to 55 nm, and the thickness of the first anti-magnetic film 21 and the second anti-magnetic film are both 10 to 30 nm, and the total thickness of the first anti-magnetic film 21 and the second anti-magnetic film 22 accounts for 18% to 55% of the total thickness of the film 100; the film 100 at this thickness has a suitable thickness, and when used to prepare the optoelectronic device 200, it can reduce the influence of magnetization and extend the life of the device while maintaining or improving the photoelectric efficiency of the device.

[0043] The present application also provides a method for preparing the film 100. Figure 5 , the preparation method comprises the following steps:

[0044] S10, providing a main material and a first material, wherein the relative magnetic susceptibility of the first material is less than -1.0×10 -5 cm;

[0045] S20 , depositing the main material and the first material to obtain a thin film 100 .

[0046] Wherein, the main material includes N-type semiconductor material or P-type semiconductor material.

[0047] The film 100 prepared based on the above preparation method comprises a main material and a first material. The film 100 has anti-magnetic properties, which can effectively reduce or eliminate the possibility of the film 100 being magnetized during the long-term action of the electromagnetic field, reduce the attenuation of the film 100 material caused by magnetization, and has a long service life and high performance stability.

[0048] In step S10, the first material may include but is not limited to one or more of pyrolytic graphite, bismuth, mercury, diamond, lead, graphite, and copper. The main material may be the N-type semiconductor material as described above, or the P-type semiconductor material as described above, which will not be described in detail here.

[0049] The film 100 has multiple implementation forms, such as the first film, the second film or the third film as described above. In some embodiments, the film 100 is a first film, that is, the material of the first film includes a mixture of the main material and the first material. Accordingly, in the method for preparing the film 100 of this embodiment, step S20 can be implemented as follows:

[0050] S20a, mixing the main material and the first material into a first mixed material, depositing the first mixed material to obtain a thin film 100.

[0051] In some embodiments, the first mixed material may be deposited by physical vapor deposition.

[0052] In some embodiments, the film 100 is a second film or a third film, that is, the film 100 includes a base film 1, a first anti-magnetic film 21, and a second anti-magnetic film 22. The material of the base film 1 includes the main material or a mixture of the main material and the first material, and the materials of the first anti-magnetic film 21 and the second anti-magnetic film 22 include the first material. Accordingly, in the method for preparing the film 100 of this embodiment, step S20 can be implemented as follows:

[0053] S20b, the first material includes a first material a, a first material b and a first material c; the first material a is deposited to obtain a first anti-magnetic film 21; a base film material is deposited on the first anti-magnetic film 21 to obtain a base film 1; the first material b is deposited on the side of the base film 1 away from the first anti-magnetic film 21 to obtain a second anti-magnetic film 22, and the base film 1, the first anti-magnetic film 21 and the second anti-magnetic film 22 together constitute a thin film; wherein the base film material includes a mixture of the main material and the first material c, or the main material.

[0054] In some embodiments, in S20b, the first material a and the first material b may be deposited by physical vapor deposition, respectively.

[0055] In steps S20a and S20b, when the film is prepared by physical vapor deposition, the following steps can be specifically implemented: the corresponding film material is used as a target material, and the target material is evaporated to obtain the film. The evaporation conditions can be: vacuum degree: 10 -6 ~10 -4 Pa, the evaporation rate is The output power is 20% to 30%, and the evaporation temperature is greater than or equal to the boiling point temperature of the film material.

[0056] The present application also provides an optoelectronic device 200, which may be, for example, a quantum dot light emitting diode (QLED), an organic light emitting diode (OLED), etc. Figure 3 and Figure 4 The optoelectronic device 200 includes an anode 10, at least one carrier functional layer and a cathode 40, wherein the carrier functional layer includes the thin film 100 described above, or includes the thin film 100 prepared by the preparation method described above.

[0057] At least one functional layer may be provided between the anode 10 and the cathode 40 of the photoelectric device 200. The at least one functional layer is distinguished from the performance: in some embodiments, in at least one functional layer, there is a unit with hole transport or injection performance, which can be defined as a hole functional layer; in other embodiments, in at least one functional layer, there is a unit with electron transport or injection performance, which can be defined as an electron functional layer. Generally speaking, the hole functional layer is provided close to the anode 10, and the electron functional layer is provided close to the cathode 40. When the electron functional layer and the hole functional layer exist at the same time, the stacking order of the film layers in the photoelectric device 200 is: anode 10, hole functional layer, electron functional layer, cathode 40.

[0058] In addition, in some embodiments, the photoelectric device 200 also includes a light-emitting layer 30, and the light-emitting layer 30 is located between the anode 10 and the cathode 40; when the device has both a hole functional layer and a light-emitting layer 30, the light-emitting layer 30 is arranged between the hole functional layer and the cathode 40; when the device has both an electronic functional layer and a light-emitting layer 30, the light-emitting layer 30 is arranged between the electronic functional layer and the anode 10; when the device has both an electronic functional layer, a hole functional layer and a light-emitting layer 30, the light-emitting layer 30 is arranged between the hole functional layer and the electronic functional layer; the stacking order of the film layers in the photoelectric device 200 is: anode 10, hole functional layer, light-emitting layer 30, electronic functional layer, cathode 40.

[0059] The hole functional layer includes one or two layers of a hole injection layer 50 and a hole transport layer 60. When the hole functional layer includes the hole injection layer 50 and the hole transport layer 60, the hole injection layer 50 is arranged between the anode 10 and the hole transport layer 60; the electron functional layer includes one or two layers of an electron injection layer and an electron transport layer 20. When the electron functional layer includes the electron injection layer and the electron transport layer 20, the electron injection layer is arranged between the anode 10 and the electron transport layer 20.

[0060] The optoelectronic device 200 proposed in the embodiment of the present application includes at least one carrier functional layer, and the at least one carrier functional layer is selected from at least one of a hole functional layer and an electron functional layer. That is, in at least one functional layer of the optoelectronic device 200, there is at least one film layer, whose material includes the corresponding main material and the first material, and the film layer is named as the carrier functional layer. The carrier functional layer has anti-magnetism, which can reduce or eliminate the possibility of the carrier functional layer being magnetized during the long-term action of the electromagnetic field, reduce the attenuation of the film material caused by magnetization, and help to extend the service life of the device and maintain its performance stability.

[0061] In some specific embodiments, the optoelectronic device 200 includes a carrier functional layer, and the carrier functional layer is an electronic functional layer. Accordingly, the electronic functional layer includes the film 100, and the material of the electronic functional layer includes an electron transport material and a first material. Further, the electronic functional layer can be made of a mixture of the electron transport material and the first material, such as Figure 3 As shown; it can also be set as a composite film layer composed of a base film made of an electron transport material and an anti-magnetic film. Specifically, the electronic functional layer can be obtained by depositing a first material on opposite sides of the base film to form an anti-magnetic film, such as Figure 4 As shown; it can also be set as a composite film layer composed of a base film made of a mixture of an electron transport material and a first material as a film material and an anti-magnetic film. Specifically, the electronic functional layer can be prepared by depositing the first material on opposite sides of the base film to form an anti-magnetic film. Furthermore, in some embodiments, at least one functional layer of the optoelectronic device 200 also includes a hole transport layer 60. The material of the hole functional layer in the device of this embodiment is a hole transport material or a hole injection material.

[0062] In some specific embodiments, the optoelectronic device 200 includes a carrier functional layer, and the carrier functional layer is a hole functional layer. Accordingly, the hole functional layer includes the film 100, and the material of the hole functional layer includes a hole transport material and a first material. Further, the hole functional layer can be made of a mixture of a hole transport material and a first material; it can also be set as a composite film layer consisting of a base film made of a hole transport material as a film material and an anti-magnetic film. Specifically, the hole functional layer can be made by depositing the first material on opposite sides of the base film to form an anti-magnetic film; it can also be set as a composite film layer consisting of a base film made of a mixture of a hole transport material and a first material as a film material and an anti-magnetic film. Specifically, the hole functional layer can be made by depositing the first material on opposite sides of the base film to form an anti-magnetic film. Further, in some embodiments, at least one functional layer of the optoelectronic device 200 also includes an electronic functional layer. The material of the electronic functional layer in the device of this embodiment is an electron transport material or an electron injection material.

[0063] In some specific embodiments, the optoelectronic device 200 includes two carrier functional layers, namely a hole functional layer and an electron functional layer, that is, the material of the hole functional layer includes a hole transport material and a first material, and the material of the electron functional layer includes an electron transport material and a first material.

[0064] The hole transport material and the electron transport material are specifically described above and will not be elaborated herein.

[0065] The hole injection material may be a material known in the art and commonly used in the hole injection layer 50 of the optoelectronic device 200 and having hole injection properties, for example, it may include but is not limited to 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO 3 At least one of a derivative of, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

[0066] The electron injection material may be a material known in the art and commonly used in the electron injection layer of the optoelectronic device 200 and having electron injection properties, for example, may include but is not limited to at least one of cesium carbonate, cesium fluoride, cesium azide and lithium fluoride.

[0067] In some embodiments, the anode 10 may be an anode 10 for a photoelectric device 200 known in the art, for example, it may be selected from but not limited to a doped metal oxide particle electrode, a composite electrode of a metal and a metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode, the material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide, the composite electrode of the metal and the metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 、TiO 2 / Al / TiO 2 , ZnS / Ag / ZnS, ZnS / Al / ZnS, the material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba.

[0068] In some embodiments, the cathode 40 may be a cathode 40 for a photoelectric device 200 known in the art, for example, it may be selected from but not limited to a doped metal oxide particle electrode, a composite electrode of a metal and a metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode, the material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide, the composite electrode of the metal and the metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 、TiO 2 / Al / TiO 2 , ZnS / Ag / ZnS, ZnS / Al / ZnS, the material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba.

[0069] In some embodiments, the material of the light-emitting layer 30 includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, One or more of delayed fluorescence materials, TTA materials, thermally activated delay materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, and exciplex luminescent materials; the quantum dot luminescent material is selected from at least one of single structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials; the material of the single structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. One; the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe , at least one of CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe;The III-V group compound is selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound is selected from at least one of CuInS; 2 、CuInSe 2 and AgInS 2 At least one of .

[0070] As an example, the core-shell structured quantum dots may be selected from but not limited to at least one of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnS CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0071] It should be noted that, for the material of the aforementioned single structure quantum dot, or the material of the core of the core-shell structure quantum dot, or the material of the shell of the core-shell structure quantum dot, the chemical formula provided only indicates the elemental composition, but does not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements, Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0072] The perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has a general structural formula of AMX 3 , where A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , wherein B is an organic amine cation selected from CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 ] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of .

[0073] It is understandable that the optoelectronic device 200 may also be provided with some functional layers conventionally used in optoelectronic devices 200 that help improve the performance of the optoelectronic device 200, such as an electron blocking layer, a hole blocking layer, an interface modification layer, etc.

[0074] It can be understood that the materials of each layer of the optoelectronic device 200 can be adjusted according to the actual requirements of the optoelectronic device 200 .

[0075] The present application also provides a method for preparing a photoelectric device 200, which can be used to prepare the above-mentioned photoelectric device 200. The preparation method comprises the following steps:

[0076] S1, providing a first electrode;

[0077] S2, disposing at least one functional layer on the first electrode, wherein the at least one functional layer includes at least one carrier functional layer;

[0078] S3, disposing a second electrode on at least one functional layer.

[0079] In steps S1 and S3, the first electrode is selected from one of the anode 10 and the cathode 40, and the second electrode is selected from the other of the anode 10 and the cathode 40. In actual preparation, according to the film design of the optoelectronic device 200, it is determined whether to prepare the anode 10 or the cathode 40 first. For example, when the optoelectronic device 200 is designed with the anode 10 at the bottom layer and the cathode 40 at the top layer, the anode 10 is prepared first, and the first electrode is the anode 10.

[0080] The preparation of the carrier functional layer may refer to the preparation method of the above-mentioned film 100, which will not be described in detail here.

[0081] It can be understood that the preparation of at least one functional layer can be carried out according to the design sequence of the film layers of the optoelectronic device 200, and each functional layer can be prepared in sequence.

[0082] In actual preparation, at least one functional layer other than the carrier functional layer can be prepared by conventional techniques in the art, such as chemical methods or physical methods. Among them, chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. Physical methods include physical coating and solution methods, among which physical coating includes thermal evaporation, electron beam evaporation, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can be spin coating, printing, inkjet printing, doctor blade coating, printing, dip-coating, immersion, spraying, roller coating, casting, slit coating, and strip coating, etc.

[0083] In addition, other film layers such as the light emitting layer 30, the anode 10 and the cathode 40 can also be prepared by conventional techniques in the art, such as chemical methods or physical methods.

[0084] In some embodiments, after step S3, the step of packaging the optoelectronic device 200 is also included. The packaging process can be a common machine packaging or a manual packaging. Preferably, in the packaging process environment, the oxygen content and the water content are both less than 0.1ppm to ensure the stability of the optoelectronic device 200.

[0085] In a fourth aspect, the present application further proposes a display device, which may be a smart phone, a portable phone, a tablet computer, a personal digital assistant (PDA), a portable multimedia player (Portable Multimedia Player), a television, a game console, a watch-type electronic device, a head-mounted display, a display of a personal computer, a notebook computer, a car navigation system, a car dashboard, a digital camera, a portable camera, an external advertising board, an electro-optical board, a medical device, a detection device, a refrigerator, a washing machine, etc. The display device includes the optoelectronic device 200 as described above.

[0086] The technical scheme and technical effects of the present application are described in detail below through specific embodiments and comparative examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0087] Film Example 1

[0088] The film of this embodiment is a film made of a mixture of a main material and a first material.

[0089] (1) mixing a main material and a first material in a molar ratio of 100:5 to prepare a mixed material, wherein the main material is zinc oxide nanoparticles and the first material is pyrolytic graphite;

[0090] (2) Take a glass substrate, put it into a vacuum coating machine, use the mixed material as a target, and perform evaporation on the glass substrate. After the evaporation is completed, heat treatment is performed at 80°C for 30 minutes to obtain a film with a thickness of 55 nm. The evaporation conditions are as follows: vacuum degree is 10 -4 Pa, the evaporation temperature is 3600°C, the evaporation rate is 2 angstroms / s, the output power is 25%, and the evaporation time is 30 min.

[0091] Film Example 2

[0092] The scheme of this embodiment is basically the same as that of Embodiment 1, except that, in this embodiment, the first material is bismuth, and accordingly, the evaporation temperature in step (2) is changed to 1564°C.

[0093] Film Example 3

[0094] The scheme of this embodiment is basically the same as that of Embodiment 1, except that, in this embodiment, the first material is mercury, and accordingly, the evaporation temperature in step (2) is changed to 357°C.

[0095] Film Example 4

[0096] The scheme of this embodiment is basically the same as that of Embodiment 1, except that, in this embodiment, the first material is diamond, and accordingly, the evaporation temperature in step (2) is changed to 4827°C.

[0097] Film Example 5

[0098] The scheme of this embodiment is basically the same as that of Embodiment 1, except that, in this embodiment, the first material is graphite, and accordingly, the evaporation temperature in step (2) is changed to 4830°C.

[0099] Film Example 6

[0100] The scheme of this embodiment is basically the same as that of Embodiment 1, except that, in this embodiment, the molar ratio of the main material to the first material is changed to 100:1.

[0101] Film Example 7

[0102] The scheme of this embodiment is basically the same as that of Embodiment 1, except that, in this embodiment, the molar ratio of the main material to the first material is changed to 100:10.

[0103] Film Example 8

[0104] The solution of this embodiment is basically the same as that of Embodiment 1, except that, in this embodiment, the main material is tin dioxide nanoparticles.

[0105] Film Example 9

[0106] The scheme of this embodiment is basically the same as that of Embodiment 1, except that, in this embodiment, the main material is TFB.

[0107] Film Example 10

[0108] The scheme of this embodiment is basically the same as that of Embodiment 1, with the only difference being that, in this embodiment, the film of this embodiment is a composite film (55nm) composed of an anti-magnetic film a (10nm), a base film (35nm) and an anti-magnetic film b (10nm) stacked in sequence, and the total thickness of the anti-magnetic film a and the anti-magnetic film b accounts for 36% of the thickness of the composite film.

[0109] (1) Take a main material and a first material for later use, wherein the main material is zinc oxide nanoparticles and the first material is pyrolytic graphite.

[0110] (2) Take a glass substrate, put it into a vacuum coating machine, use the first material as a target material, and perform evaporation on the glass substrate. After the evaporation is completed, heat treatment is performed at 80°C for 30 minutes to obtain an anti-magnetic film a with a thickness of 10 nm. The evaporation conditions are set as follows: the vacuum degree is 10 -4Pa, the evaporation temperature is 3600°C, the evaporation rate is 2 angstroms / s, the output power is 25%, and the evaporation time is 15 seconds. Then, an ethanol solution of zinc oxide nanoparticles is spin-coated on the anti-magnetic film a to form a base film with a thickness of 35 nm.

[0111] (3) Put the wafer obtained in step (2) into a vacuum coating machine, use the first material as the target material, and perform evaporation on the base film. After the evaporation is completed, heat treatment is performed at 80°C for 30 minutes to obtain an anti-magnetic film b with a thickness of 10nm, and a film with a total thickness of 55nm. The evaporation conditions are set as follows: the vacuum degree is 10 -4 Pa, the evaporation temperature is 3600°C, the evaporation rate is 2 angstroms / s, the output power is 25%, and the evaporation time is 15 min.

[0112] Film Example 11

[0113] The scheme of this embodiment is basically the same as that of embodiment 10, with the only difference being that, in this embodiment, the first material is bismuth, and accordingly, the evaporation temperature is changed to 1564°C.

[0114] Film Example 12

[0115] The scheme of this embodiment is basically the same as that of embodiment 10, with the only difference being that, in this embodiment, the first material is mercury, and accordingly, the evaporation temperature is changed to 357°C.

[0116] Film Example 13

[0117] The scheme of this embodiment is basically the same as that of embodiment 10, with the only difference being that, in this embodiment, the percentage of the total thickness of the anti-magnetic film a and the anti-magnetic film b to the thickness of the composite film is changed to 18%, and accordingly, the thickness of the anti-magnetic film a is changed to 5nm, the thickness of the anti-magnetic film b is changed to 5nm, and the thickness of the base film is changed to 45nm.

[0118] Film Example 14

[0119] The scheme of this embodiment is basically the same as that of embodiment 10, with the only difference being that, in this embodiment, the percentage of the total thickness of the anti-magnetic film a and the anti-magnetic film b to the thickness of the composite film is changed to 55%, and accordingly, the thickness of the anti-magnetic film a is changed to 15nm, the thickness of the anti-magnetic film b is changed to 15nm, and the thickness of the base film is changed to 25nm.

[0120] Film Example 15

[0121] The scheme of this embodiment is basically the same as that of Embodiment 10, with the only difference being that, in this embodiment, the main material is TFB.

[0122] Film Example 16

[0123] The scheme of this embodiment is basically the same as that of embodiment 11, except that, in this embodiment, the material of the base film is a mixture of the main material and the first material. Accordingly, the preparation of the base film in step (2) is changed to:

[0124] The main material and the first material were mixed in a molar ratio of 100:5 to prepare a mixed material, and the mixed material was used as a target to perform vapor deposition on the antimagnetic film a to obtain a base film with a thickness of 45 nm. The vapor deposition conditions were set as follows: the vacuum degree was 10 -4 Pa, the evaporation temperature is 3600°C, the evaporation rate is 2 angstroms / s, the output power is 25%, and the evaporation time is 65 min.

[0125] Film Comparative Example 1

[0126] The zinc oxide nanoparticles mentioned in Example 1 were dispersed in ethanol to prepare a ZnO ethanol solution; the ZnO ethanol solution was spin-coated on a glass substrate to prepare a thin film with a thickness of 55 nm.

[0127] Film Comparative Example 2

[0128] The tin dioxide nanoparticles mentioned in Example 9 were dispersed in ethanol to prepare SnO 2 Ethanol solution; Spin coating SnO on glass substrate 2 Ethanol solution, made into a film with a thickness of 55nm.

[0129] Film Comparative Example 3

[0130] In this comparative example, the TFB mentioned in Example 10 was dispersed in chlorobenzene to prepare a TFB chlorobenzene solution; the TFB chlorobenzene solution was spin-coated on a glass substrate to prepare a film with a thickness of 55 nm.

[0131] Device Example 1

[0132] (1) Provide an ITO anode, wipe the ITO surface with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye, then ultrasonically clean it with deionized water, acetone, anhydrous ethanol, and deionized water for 20 minutes, and then blow dry it with nitrogen for later use.

[0133] (2) Spin coating PEDOT:PSS material on the anode and annealing at 100° C. for 10 min to obtain a hole injection layer with a thickness of 100 nm.

[0134] (3) Spin-coat the surface of the hole injection layer with TFB chlorobenzene solution and anneal at 200° C. for 30 min to obtain a hole transport layer with a thickness of 50 nm.

[0135] (4) Spin-coat CdZnSe / CdSe / CdS quantum dot material on the hole transport layer and anneal at 80°C for 30 min to obtain a light-emitting layer with a thickness of 60 nm.

[0136] (5) Referring to the thin film example 1, a thin film is prepared on the light-emitting layer as an electron transport layer.

[0137] (6) The wafer prepared in step (5) is placed into a vacuum coating machine, and an electrode is evaporated using a Ag target to obtain a cathode with a thickness of 60 nm, and then heat-treated at 120° C. for 15 min to obtain a QLED device.

[0138] Device Examples 2 to 9, Device Examples 11 to 16, and Device Example 18

[0139] The schemes of device embodiments 2 to 9 are basically the same as device embodiment 1, with the only difference being that in device embodiment n, in step (5), a thin film is prepared as an electron transport layer with reference to thin film embodiment n, where n is any integer of 2 to 9, 11 to 16 and 18.

[0140] Other parameters and steps remain unchanged.

[0141] Device Examples 10 and 17

[0142] Device Examples 10 and 17 are basically the same as Device Example 1, except that in Device Example m, the hole transport layer uses the thin film in Thin Film Example m, the electron transport layer uses the ZnO thin film, and m is 10 or 17; accordingly, steps (3) and (5) are changed to:

[0143] (3) Referring to the thin film example m, a thin film was prepared on the hole injection layer as a hole transport layer.

[0144] (5) Spin-coat a ZnO ethanol solution on the light-emitting layer to obtain an electron transport layer.

[0145] Other parameters and steps remain unchanged.

[0146] Device Comparison Example 1

[0147] This comparative example is basically the same as device embodiment 1, with the only difference being that in this comparative example, the electron transport layer adopts the ZnO thin film prepared in thin film comparative example 1, and accordingly, step (5) is changed to refer to thin film comparative example 1, and a thin film is prepared on the light-emitting layer as the electron transport layer.

[0148] Device Comparison Example 2

[0149] This comparative example is basically the same as device example 1, except that in this comparative example, the electron transport layer is SnO prepared in thin film comparative example 2. 2 The film, accordingly, step (5) is changed to reference film comparative example 2, and a film is prepared on the light-emitting layer as an electron transport layer.

[0150] Device Comparison Example 3

[0151] The scheme of this comparative example is basically the same as that of device embodiment 1, except that in this comparative example, the thin film used in the electron transport layer is changed to the following thin film, which is a composite thin film composed of a base film and an antimagnetic film stacked in sequence. Accordingly, preparation steps (2) and (3) are changed to:

[0152] (2) Take a glass substrate and spin-coat an ethanol solution of zinc oxide nanoparticles on the substrate to form a base film with a thickness of 35 nm.

[0153] (3) Put the wafer obtained in step (1) into a vacuum coating machine, use the first material as the target material, and perform evaporation on the base film. After the evaporation is completed, heat treatment is performed at 80° C. for 30 minutes to obtain an anti-magnetic film with a thickness of 20 nm, and a film with a total thickness of 55 nm. The evaporation conditions are set as follows: the vacuum degree is 10 -4 Pa, the evaporation temperature is 3600°C, the evaporation rate is 2 angstroms / s, the output power is 25%, and the evaporation time is 30 min.

[0154] Experimental example

[0155] (i) Take the films prepared in the film examples and the film comparison examples, and use a magnetic susceptibility tester to test the magnetic susceptibility of the films. The results are recorded in Table 1.

[0156] Table 1

[0157]

[0158]

[0159] It can be seen from the above table that compared with the film comparison example, the films prepared in each film embodiment have a lower relative magnetic susceptibility, indicating that the film containing the first material has good anti-magnetism and can reduce material attenuation caused by magnetization.

[0160] (II) The devices prepared in the above device embodiments and device comparative examples were tested, and the data are shown in Table 2. Specifically, the data include external quantum efficiency EQE, measured lifespan T95, lifespan T95@1000nit and leakage rate.

[0161] (1) The test method for external quantum efficiency EQE is:

[0162] The ratio of the number of electron-hole pairs injected into quantum dots to the number of emitted photons, expressed in %, is an important parameter for measuring the quality of electrophotoelectric devices and can be obtained by measuring with an EQE optical test instrument. The specific calculation formula is as follows:

[0163]

[0164] Where ηe is the light output coupling efficiency, ηr is the ratio of the number of recombined carriers to the number of injected carriers, χ is the ratio of the number of excitons that generate photons to the total number of excitons, and K R is the radiation process rate, K NR is the rate of the non-radiative process.

[0165] Test conditions: carried out at room temperature, air humidity is 30-60%.

[0166] (2) The test method for life span T95@1000nit is: the time required for the device to reduce its brightness to a certain proportion of the maximum brightness under constant current or voltage drive. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this life span is the measured life span. In order to shorten the test cycle, the device life span test is usually carried out at high brightness by accelerating device aging, and the life span at high brightness is obtained by fitting the extended exponential decay brightness attenuation fitting formula, for example: the life span at 1000nit is calculated as T95@1000nit. The specific calculation formula is as follows:

[0167]

[0168] Among them, T95 L For lifespan at low brightness, T95 H is the measured lifetime under high brightness, L H To accelerate the device to the highest brightness, L L is 1000nit, A is the acceleration factor, and this experiment measured the lifespan of several groups of green QLED devices at rated brightness and found that the A value was 1.7.

[0169] (3) The test method for leakage rate is: select four test points on the device, and perform leakage test on 25 devices (a total of 100 test points). Leakage rate (%) = (number of leakage test points / 100) × 100%.

[0170] Table 2

[0171]

[0172]

[0173] Electrons disturbed by the magnetic field will not enter the QD light-emitting layer in the normal path. These electrons will accumulate at the interface between the light-emitting layer and the electron transport layer or accumulate inside the electron transport layer, resulting in excessive local current density and leakage of the device. The device will not work properly due to leakage. In the above table:

[0174] In device embodiments 1 to 9 and comparative examples 1 and 2, the device embodiments have a lower leakage rate, higher external quantum efficiency EQE, measured lifetime T95, and lifetime T95@1000nit than the comparative examples, indicating that doping the electron transport layer or the hole transport layer with antimagnetic materials helps to reduce magnetic field interference and reduce the attenuation of the film material due to magnetization, thereby helping to extend the service life and luminescence performance of the device, which is macroscopically reflected in higher EQE and lifetime;

[0175] In device embodiment 10 and comparative examples 1 and 3, compared with comparative example 1, device embodiment 10 has a lower leakage rate, and higher external quantum efficiency EQE, measured life T95, and life T95@1000nit, but comparative example 3 shows a change in performance degradation, indicating that only by setting anti-magnetic films on both sides of the base film can an effective anti-magnetic interference environment be constructed to reduce the attenuation of the film material caused by magnetization. Setting the anti-magnetic film only on one side of the base film cannot construct an anti-magnetic interference environment and play an anti-magnetization role;

[0176] In device embodiments 10 to 16 and device comparison examples 1 and 2, the device embodiments have a lower leakage rate, and higher external quantum efficiency EQE, measured lifetime T95, and lifetime T95@1000nit than the comparison examples, indicating that providing an anti-magnetic film on at least one side of the electron transport layer or the hole transport layer helps to reduce magnetic field interference and reduce the attenuation of the film material due to magnetization, thereby helping to extend the service life and luminescence performance of the device, which is macroscopically reflected in higher EQE and lifetime.

[0177] The technical solutions provided by the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A film, It is characterized in that The material of the film includes a main material and a first material, and the relative magnetic susceptibility of the first material is less than -1.0×10 -5 cm, the main material includes N-type semiconductor material or P-type semiconductor material.

2. The film according to claim 1, It is characterized in that The first material includes one or more of pyrolytic graphite, bismuth, mercury, diamond, lead, graphite, and copper.

3. The film according to claim 1, It is characterized in that The material of the film includes a first mixture of the main material and the first material; or, The film includes a first anti-magnetic film, a base film and a second anti-magnetic film which are stacked, wherein the material of the base film includes a second mixture of the main material and the first material or the base film is composed of the main material, and the materials of the first anti-magnetic film and the second anti-magnetic film are independently selected from the first material.

4. The film according to claim 3, It is characterized in that In the first mixture, the molar ratio of the main material to the first material is 100:(1-10); and / or, In the second mixture, the molar ratio of the main material to the first material is 100:(1-10).

5. The film according to claim 3, It is characterized in that The thickness of the first anti-magnetic film is 10-30 nm; and / or, The thickness of the second anti-magnetic film is 10-30 nm; and / or, The thickness of the base film is 5 to 55 nm; and / or, The percentage of the total thickness of the first anti-magnetic film and the second anti-magnetic film to the total thickness of the film is 18% to 55%.

6. The film according to claim 1, It is characterized in that The N-type semiconductor material is selected from at least one of metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials, and the metal oxide is selected from ZnO, BaO, TiO 2 SnO 2 At least one of the following; the metal oxide in the doped metal oxide is selected from ZnO, TiO 2 SnO 2 At least one of the doping elements is selected from at least one of Al, Mg, Li, In, and Ga; the II-VI semiconductor material is selected from at least one of ZnS, ZnSe, and CdS; the III-V semiconductor material is selected from at least one of InP and GaP; the I-III-VI semiconductor material is selected from at least one of CuInS and CuGaS; or, The P-type semiconductor material is selected from 4,4'-N,N'-dicarbazolyl-biphenyl, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, tris(3-methylphenylamino)-triphenylamine, poly(p-)phenylenevinylene, poly(vinylene)- [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO 3 One or more of a derivative of, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, and tetracyanoquinodimethane.

7. A method for preparing a thin film, It is characterized in that The following steps are involved: Provide a main material and a first material, wherein the relative magnetic susceptibility of the first material is less than -1.0×10 -5 cm; Depositing the main material and the first material to obtain a thin film; Wherein, the main material includes N-type semiconductor material or P-type semiconductor material.

8. The preparation method according to claim 7, It is characterized in that The first material includes one or more of pyrolytic graphite, bismuth, mercury, diamond, lead, graphite, and copper; and / or, The step of depositing the main material and the first material to obtain a thin film comprises: Mixing the main material and the first material into a first mixed material, and depositing the first mixed material to obtain a thin film; or, The first material includes first material a, first material b and first material c; the first material a is deposited to obtain a first anti-magnetic film; a base film material is deposited on the first anti-magnetic film to obtain a base film; the first material b is deposited on the side of the base film away from the first anti-magnetic film to obtain a second anti-magnetic film, and the base film, the first anti-magnetic film and the second anti-magnetic film together constitute a thin film; wherein the base film material includes a mixture of the main material and the first material c, or the main material.

9. The preparation method according to claim 8, It is characterized in that In the step of depositing the first mixed material to obtain a thin film, the deposition is performed by physical vapor deposition; and / or, In the step of depositing the first material a to obtain the first anti-magnetic film, the deposition is performed by physical vapor deposition; and / or, In the step of depositing the first material b on the side of the base film facing away from the first diamagnetic film, the deposition is performed by physical vapor deposition.

10. A photoelectric device, It is characterized in that The invention comprises an anode, at least one carrier functional layer and a cathode, wherein the carrier functional layer comprises the thin film according to any one of claims 1 to 6, or comprises a thin film prepared by the preparation method according to any one of claims 7 to 9.

11. The optoelectronic device according to claim 10, It is characterized in that The cathode and the anode are independently selected from a doped metal oxide particle electrode, a composite electrode of metal and metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide. The composite electrode of metal and metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 、TiO 2 / Al / TiO 2 , ZnS / Ag / ZnS, ZnS / Al / ZnS, the material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba; and / or, The at least one carrier functional layer is selected from at least one of a hole functional layer and an electron functional layer. When the at least one carrier functional layer includes the hole functional layer, the main material in the hole functional layer includes the P-type semiconductor material. When the at least one carrier functional layer includes the electron functional layer, the main material in the electron functional layer includes the N-type semiconductor material.

12. The optoelectronic device according to claim 11, It is characterized in that The optoelectronic device further comprises a light-emitting layer; When the at least one carrier functional layer includes the hole functional layer, the light-emitting layer is arranged between the hole functional layer and the cathode; when the at least one carrier functional layer includes the electron functional layer, the light-emitting layer is arranged between the electron functional layer and the anode; when the at least one carrier functional layer includes the hole functional layer and the electron functional layer, the light-emitting layer is arranged between the hole functional layer and the electron functional layer, and the hole functional layer is arranged close to the anode.

13. The optoelectronic device according to claim 12, It is characterized in that The material of the light-emitting layer includes one or more organic light-emitting materials and quantum dot light-emitting materials, and the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, T One or more of TA materials, thermally activated delay materials, polymers containing covalent bonding of BN, hybrid localized charge transfer excited state materials, and exciplex luminescent materials; the quantum dot luminescent material is selected from at least one of single structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials; the material of the single structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds; the Group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, H gSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, C At least one of dZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe;The III-V group compound is selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound is selected from at least one of CuInS; 2 、CuInSe 2 AgInS 2 At least one of the following: the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has a general structural formula of AMX 3 , where A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , wherein B is an organic amine cation selected from CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 ] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of .

14. A display device, It is characterized in that The optoelectronic device comprises the optoelectronic device according to any one of claims 10 to 13.

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