Radiation-resistant reinforcing structure of beta-Ga2O3 Schottky barrier diode

Abstract

The invention relates to the technical field of diodes, in particular to a beta-Ga2O3 Schottky barrier diode anti-radiation reinforcing structure, and solves the problems that an existing Schottky diode is affected by radiation when being applied to an electronic system, the single event effect of the Schottky diode is likely to occur, the device performance is seriously degraded and even burnt down, and the service life of the Schottky diode is prolonged. The device comprises two assembly protection mechanisms, a positioning connection mechanism and a radiation monitoring mechanism, the inner sides of the two assembly protection mechanisms are provided with a diode main body, and the outer sides of the two assembly protection mechanisms are provided with a positioning connection mechanism. And a radiation monitoring mechanism is mounted on one side of the positioning connecting mechanism. The Schottky barrier diode is subjected to radiation shielding and coating reinforcement, the situation that application is unstable due to the fact that the Schottky barrier diode is affected by radiation in an electronic system can be effectively avoided, and the radiation quantity before and after shielding can be conveniently monitored and displayed in real time.

Description

Technical Field

[0001] The invention relates to the technical field of diodes, in particular to a radiation-resistant reinforcement structure of a beta-Ga2O3 Schottky barrier diode. Background Art

[0002] A Schottky diode, also known as a Schottky barrier diode or a hot carrier diode, is a device with rectification characteristics formed by the contact between metal and semiconductor. Compared with traditional PN junction diodes, Schottky diodes have lower forward voltage drop and faster switching speed, making them widely used in high-frequency and low-power fields. The forward voltage drop of a Schottky diode is usually only about 0.2V, which is much lower than the 0.7V of a PN junction diode. This makes Schottky diodes have significant advantages in situations where low power consumption is required. Schottky diodes have extremely fast switching speeds and are suitable for high-frequency circuits. Schottky diodes have high high-temperature resistance.

[0003] Existing Schottky diodes are affected by radiation when used in electronic systems. Schottky diodes are prone to single particle effects, which can cause serious degradation or even burnout of device performance, ultimately causing the electronic system to fail to work properly. Therefore, it does not meet existing needs. In this regard, we propose a β-Ga2O3 Schottky barrier diode with anti-radiation reinforcement structure. Summary of the invention

[0004] The purpose of the present invention is to provide a β-Ga2O3 Schottky barrier diode anti-radiation reinforcement structure to solve the problem mentioned in the above background technology that the existing Schottky diodes are affected by radiation when used in electronic systems, the Schottky diodes are prone to single particle effects, and the device performance is severely degraded or even burned, which eventually causes the electronic system to fail to work normally.

[0005] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a β-Ga2O3 Schottky barrier diode radiation-resistant reinforcement structure, comprising two assembly protection mechanisms, a positioning connection mechanism and a radiation monitoring mechanism, wherein a diode body is installed on the inner side of the two assembly protection mechanisms, a positioning connection mechanism is installed on the outer side of the two assembly protection mechanisms, a radiation monitoring mechanism is installed on one side of the positioning connection mechanism, the assembly protection mechanism comprises a covering cover, slots are provided on the sides of both sides of the covering cover, a plurality of positioning protrusions are provided on one side of the slot, and an insulating shielding layer is installed on the inner wall of the covering cover;

[0006] The positioning connection mechanism comprises a connecting splint, two covering strips are installed on the upper end of the connecting splint, a plurality of elastic retreat grooves are arranged on the inner side of the covering strip, and a card joint is installed on the inner side of the elastic retreat groove;

[0007] The radiation monitoring mechanism includes a first connecting bar, a sealing sleeve is provided on the outer side of the upper end of the first connecting bar, a mounting cover is installed at the bottom end of the first connecting bar, an indicator light is installed in the middle of one side of the mounting cover, and a second connecting bar is installed at the bottom end of the mounting cover.

[0008] Preferably, the diode body includes a resin shell, a positioning hole is provided on one side of the bottom end of the resin shell, a protective limit plate is installed on the inner side of the upper end of the resin shell, a positioning metal block is installed on the lower end face of the protective limit plate, three metal pins are installed on the inner side of the positioning metal block, a cathode metal layer is installed on the lower end face of the positioning metal block, a silicon oxide layer is installed between the cathode metal layer and the positioning metal block, and an isolation locking strip is installed on the lower end face of the cathode metal layer.

[0009] Preferably, the resin shell and the protective limiting plate are integrally injection molded, the bottom ends of the three metal pins pass through the protective limiting plate and are plugged into the inner side of the upper end of the positioning metal block, and the positioning metal block and the three metal pins are fixedly connected via the protective limiting plate.

[0010] Preferably, the positioning metal block is connected to the cathode metal layer through a silicon oxide layer, and a contact is provided at the upper end of the cathode metal layer. The contact penetrates the silicon oxide layer and is in contact with the lower end surface of the protective limit plate. The cathode metal layer, silicon oxide layer and positioning metal block are arranged in sequence from bottom to top on the inner side of the isolation locking strip and the protective limit plate.

[0011] Preferably, the resin shell and two covering covers are connected via an insulating shielding layer, the covering cover and a plurality of positioning bumps are integrally injection molded, the two covering covers are in close contact and symmetrically installed relative to the resin shell, and the insulating shielding layer is made of rare earth-based material.

[0012] Preferably, the connecting splint and the plurality of clamping joints are integrally injection molded, two adjacent clamping joints are symmetrically installed relative to the axis of the covering strip, and the connecting splint and the covering cover are clamped and installed via the clamping joints and the positioning protrusions.

[0013] Preferably, the connecting splint is sleeved on the outer side of the bottom end of the resin shell and fixedly connected to the bottom ends of the two covering strips, and a slide groove is provided on one side of the connecting splint close to the covering cover, and the positioning protrusion is inserted into the inner side of the slide groove.

[0014] Preferably, the two slots form an insertion hole, the sealing sleeve is arranged on the inner side of the insertion hole, and the upper end of the first connecting strip passes through the sealing sleeve and is in close contact with the outer surface of the resin shell.

[0015] Preferably, the upper end of the first connecting strip is connected to the two covering covers via a sealing sleeve, the bottom end of the second connecting strip is fitted and fixed to the outer surface of one of the covering covers, and the first connecting strip and the second connecting strip are both plugged into the inner side of the mounting cover.

[0016] Preferably, a radiation sensor is provided on the inner side of the mounting cover, the first connecting bar and the second connecting bar are fixedly connected to the radiation sensor, and the indicator light passes through the mounting cover and is electrically connected to the radiation sensor.

[0017] Compared with the prior art, the present invention has the following beneficial effects:

[0018] 1. The present invention connects the resin housing and the two covering covers through an insulating shielding layer, and then the two covering covers can seal and cover the resin housing through the insulating shielding layer, wherein the insulating shielding layer is made of a rare earth-based material, and then the diode body can be completely shielded by the two insulating shielding layers, effectively improving the radiation resistance of the diode body. The covering strip and the covering cover are mutually clamped and installed through a clamping joint and a positioning protrusion, so that the locking installation operation of the covering strip on the two covering covers is realized, and the covering stability of the two covering covers on the diode body is improved. By performing radiation shielding and covering reinforcement on the Schottky barrier diode, it can effectively avoid the situation where the application is unstable due to the influence of radiation in the electronic system;

[0019] 2. In the present invention, the upper end of the first connecting strip is in contact with the outer surface of the resin shell, and a radiation sensor is provided on the inner side of the mounting cover, so that the radiation sensor is connected to the resin shell through the first connecting strip, and the radiation sensor is connected to the surface of the covering cover through the second connecting strip, so that the radiation sensor can monitor the shielding effect of the insulating shielding layer on the resin shell, and the indicator light is electrically connected to the radiation sensor, so that the value of the radiation sensor can be intuitively displayed through the brightness change of the indicator light. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0021] Figure 2 A front view of the present invention as a whole;

[0022] Figure 3 It is a schematic diagram of the exploded structure of the positioning connection mechanism of the present invention;

[0023] Figure 4 It is a schematic diagram of the explosion structure of the assembled protection mechanism of the present invention;

[0024] Figure 5 It is a schematic cross-sectional structure diagram of the present invention as a whole;

[0025] Figure 6It is a schematic diagram of the cross-sectional structure of the coated strip of the present invention;

[0026] Figure 7 It is a schematic diagram of the cross-sectional structure of the diode body of the present invention.

[0027] In the figure: 1. diode body; 101. resin shell; 102. metal pin; 103. positioning hole; 104. cathode metal layer; 105. isolation locking strip; 106. protective limit plate; 107. silicon oxide layer; 108. positioning metal block; 2. assembly protection mechanism; 201. covering cover; 202. positioning bump; 203. slot; 204. insulating shielding layer; 3. positioning connection mechanism; 301. connecting splint; 302. covering strip; 303. card connector; 304. elastic concession groove; 4. radiation monitoring mechanism; 401. first connecting strip; 402. sealing sleeve; 403. installation cover; 404. indicator light; 405. second connecting strip. DETAILED DESCRIPTION

[0028] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0029] See also Figure 4 , Figure 5 and Figure 7 , an embodiment provided by the present invention: a β-Ga2O3 Schottky barrier diode radiation-resistant reinforcement structure, comprising two assembled protection mechanisms 2, a positioning connection mechanism 3 and a radiation monitoring mechanism 4, a diode body 1 is installed on the inner side of the two assembled protection mechanisms 2, the diode body 1 comprises a resin shell 101, a positioning hole 103 is provided on one side of the bottom end of the resin shell 101, a protective limiting piece 106 is installed on the inner side of the upper end of the resin shell 101, the resin shell 101 and the protective limiting piece 106 are integrally injection molded, a positioning metal block 108 is installed on the lower end surface of the protective limiting piece 106, the bottom ends of three metal pins 102 pass through the protective limiting piece 106 and are plugged into the inner side of the upper end of the positioning metal block 108, three metal pins 102 are installed on the inner side of the positioning metal block 108, the positioning metal block 108 is fixedly connected to the three metal pins 102 through the protective limiting piece 106, and the positioning metal block 108 is used to facilitate the positioning, installation and conduction of the metal pins 102;

[0030] A cathode metal layer 104 is installed on the lower end face of the positioning metal block 108, and a silicon oxide layer 107 is installed between the cathode metal layer 104 and the positioning metal block 108. The positioning metal block 108 is connected to the cathode metal layer 104 through the silicon oxide layer 107. A contact is provided at the upper end of the cathode metal layer 104, and the contact penetrates the silicon oxide layer 107 and is in contact with the lower end face of the protective limit plate 106. An isolation locking strip 105 is installed on the lower end face of the cathode metal layer 104. The cathode metal layer 104, the silicon oxide layer 107 and the positioning metal block 108 are arranged in sequence from bottom to top on the inner side of the isolation locking strip 105 and the protective limit plate 106, and the resin shell 101 and the protective limit plate 106 facilitate sealing and protection of the positioning metal block 108 and the cathode metal layer 104.

[0031] See also Figures 1 to 5 The assembled protection mechanism 2 includes a covering cover 201, and slots 203 are provided on the sides of both sides of the covering cover 201. A plurality of positioning protrusions 202 are provided on one side of the slot 203. The covering cover 201 and the plurality of positioning protrusions 202 are integrally injection molded. The two covering covers 201 are in contact with each other and are symmetrically installed relative to the resin shell 101. An insulating shielding layer 204 is installed on the inner wall of the covering cover 201. The resin shell 101 and the two covering covers 201 are connected through the insulating shielding layer 204. The material of the insulating shielding layer 204 is a rare earth-based material. The diode body 1 can be completely shielded by the two insulating shielding layers 204, thereby effectively improving the anti-radiation effect of the diode body 1.

[0032] See also Figures 2 to 6 A positioning connection mechanism 3 is installed on the outer side of the two assembled protection mechanisms 2. The positioning connection mechanism 3 includes a connecting splint 301. Two covering strips 302 are installed on the upper end of the connecting splint 301. The connecting splint 301 is sleeved on the outer side of the bottom end of the resin shell 101 and is fixedly connected to the bottom ends of the two covering strips 302. A sliding groove is provided on one side of the connecting splint 301 close to the covering cover 201. The positioning protrusion 202 is inserted into the inner side of the sliding groove. The inner side of the covering strip 302 is provided with a plurality of elastic concessions. Groove 304, a clamping joint 303 is installed on the inner side of the elastic retreat groove 304, the connecting clamp 301 and multiple clamping joints 303 are integrally injection molded, and two adjacent clamping joints 303 are symmetrically installed relative to the axis of the covering strip 302. The connecting clamp 301 and the covering cover 201 are clamped and installed through the clamping joint 303 and the positioning protrusion 202, so that the covering strip 302 can lock and install the two covering covers 201, thereby improving the stability of the two covering covers 201 covering the diode body 1.

[0033] See also Figure 1 and Figure 2A radiation monitoring mechanism 4 is installed on one side of the positioning connection mechanism 3, and the radiation monitoring mechanism 4 includes a first connecting strip 401, a sealing sleeve 402 is provided on the outer side of the upper end of the first connecting strip 401, two slots 203 form a socket, and the sealing sleeve 402 is arranged on the inner side of the socket. The upper end of the first connecting strip 401 passes through the sealing sleeve 402 and is in contact with the outer surface of the resin housing 101. The upper end of the first connecting strip 401 is connected to the two covering covers 201 through the sealing sleeve 402. The bottom end of the first connecting strip 401 is installed with a mounting cover 403, and a radiation sensor is provided on the inner side of the mounting cover 403, so that the radiation sensor can monitor the shielding effect of the insulating shielding layer 204 on the resin housing 101;

[0034] An indicator light 404 is installed in the middle of one side of the mounting cover 403, and a second connecting strip 405 is installed at the bottom end of the mounting cover 403. The bottom end of the second connecting strip 405 is fitted and fixed to the outer surface of one of the covering covers 201. The first connecting strip 401 and the second connecting strip 405 are both plugged into the inner side of the mounting cover 403. The first connecting strip 401 and the second connecting strip 405 are fixedly connected to the radiation sensor. The indicator light 404 passes through the mounting cover 403 and is electrically connected to the radiation sensor. The brightness change of the indicator light 404 can intuitively display the value of the radiation sensor.

[0035] In summary, when the diode is used, the two covering covers 201 are inserted into the outer side of the upper end of the resin shell 101, so that the resin shell 101 and the two covering covers 201 are connected through the insulating shielding layer 204, and then the two covering covers 201 can seal and cover the resin shell 101 through the insulating shielding layer 204, wherein the material of the insulating shielding layer 204 is a rare earth-based material, and then the diode body 1 can be completely shielded by the two insulating shielding layers 204, effectively improving the anti-radiation effect of the diode body 1;

[0036] At the same time, a slide groove is provided on one side of the covering strip 302, and the connecting clamp 301 drives the two covering strips 302 to be installed to the outer side of the positioning protrusion 202, so that the positioning protrusion 202 is inserted into the inner side of the slide groove, and then the covering strip 302 and the covering cover 201 are mutually clamped and installed through the clamping joint 303 and the positioning protrusion 202, so as to realize the locking installation operation of the covering strip 302 on the two covering covers 201, and improve the covering stability of the two covering covers 201 on the diode body 1, and a positioning hole 103 is provided on one side of the bottom end of the resin shell 101, so that the screw can install the resin shell 101 through the positioning hole 103 and lock the connecting clamp 301 at the same time, so as to keep the connecting clamp 301 and the resin shell 101 fixed, and maintain the reinforcement effect of the positioning connection mechanism 3.

[0037] The two slots 203 form a socket, so that the upper end of the first connecting strip 401 is plugged into the inner side of the socket through the sealing sleeve 402 and is in contact with the outer surface of the resin shell 101, and a radiation sensor is provided on the inner side of the mounting cover 403, so that the radiation sensor is connected to the resin shell 101 through the first connecting strip 401, and the radiation sensor is connected to the surface of the covering cover 201 through the second connecting strip 405, so that the radiation sensor can monitor the shielding effect of the insulating shielding layer 204 on the resin shell 101, and the indicator light 404 is electrically connected to the radiation sensor, and the value of the radiation sensor can be intuitively displayed through the brightness change of the indicator light 404.

[0038] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

Claims

1. A β-Ga2O3 Schottky barrier diode radiation-resistant reinforcement structure, comprising two assembly protection mechanisms (2), a positioning connection mechanism (3) and a radiation monitoring mechanism (4), characterized in that: A diode body (1) is installed on the inner side of the two assembled protection mechanisms (2), a positioning connection mechanism (3) is installed on the outer side of the two assembled protection mechanisms (2), a radiation monitoring mechanism (4) is installed on one side of the positioning connection mechanism (3), the assembled protection mechanism (2) comprises a covering cover (201), slots (203) are provided on both sides of the covering cover (201), a plurality of positioning protrusions (202) are provided on one side of the slots (203), and an insulating shielding layer (204) is installed on the inner wall of the covering cover (201); The positioning connection mechanism (3) comprises a connection clamp (301), two covering strips (302) are installed on the upper end of the connection clamp (301), a plurality of elastic retreat grooves (304) are provided on the inner side of the covering strip (302), and a clamping joint (303) is installed on the inner side of the elastic retreat groove (304); The radiation monitoring mechanism (4) comprises a first connecting bar (401), a sealing sleeve (402) is provided on the outer side of the upper end of the first connecting bar (401), a mounting cover (403) is installed at the bottom end of the first connecting bar (401), an indicator light (404) is installed in the middle of one side of the mounting cover (403), and a second connecting bar (405) is installed at the bottom end of the mounting cover (403).

2. The β-Ga2O3 Schottky barrier diode radiation hardening structure according to claim 1, characterized in that: The diode body (1) comprises a resin shell (101), a positioning hole (103) is provided on one side of the bottom end of the resin shell (101), a protective limiting plate (106) is installed on the inner side of the upper end of the resin shell (101), a positioning metal block (108) is installed on the lower end surface of the protective limiting plate (106), three metal pins (102) are installed on the inner side of the positioning metal block (108), a cathode metal layer (104) is installed on the lower end surface of the positioning metal block (108), a silicon oxide layer (107) is installed between the cathode metal layer (104) and the positioning metal block (108), and an isolation locking strip (105) is installed on the lower end surface of the cathode metal layer (104).

3. The β-Ga2O3 Schottky barrier diode anti-radiation reinforcement structure according to claim 2, characterized in that: The resin housing (101) and the protective limiting plate (106) are integrally injection molded, the bottom ends of the three metal pins (102) penetrate the protective limiting plate (106) and are plugged into the inner side of the upper end of the positioning metal block (108), and the positioning metal block (108) and the three metal pins (102) are fixedly connected via the protective limiting plate (106).

4. The β-Ga2O3 Schottky barrier diode anti-radiation reinforcement structure according to claim 3, characterized in that: The positioning metal block (108) is connected to the cathode metal layer (104) via the silicon oxide layer (107); a contact is provided at the upper end of the cathode metal layer (104); the contact penetrates the silicon oxide layer (107) and is in contact with the lower end surface of the protective limiting plate (106); the cathode metal layer (104), the silicon oxide layer (107) and the positioning metal block (108) are arranged in sequence from bottom to top on the inner side of the isolation locking strip (105) and the protective limiting plate (106).

5. The β-Ga2O3 Schottky barrier diode radiation hardening structure according to claim 4, characterized in that: The resin shell (101) and the two covering covers (201) are connected via an insulating shielding layer (204); the covering cover (201) and the plurality of positioning protrusions (202) are integrally injection-molded; the two covering covers (201) are in close contact and symmetrically installed relative to the resin shell (101); and the insulating shielding layer (204) is made of a rare earth-based material.

6. The β-Ga2O3 Schottky barrier diode radiation hardening structure according to claim 5, characterized in that: The connecting clamp (301) and the plurality of clamping joints (303) are integrally injection molded, and two adjacent clamping joints (303) are symmetrically installed relative to the axis of the covering strip (302). The connecting clamp (301) and the covering cover (201) are clamped and installed via the clamping joints (303) and the positioning protrusions (202).

7. The β-Ga2O3 Schottky barrier diode radiation hardening structure according to claim 6, characterized in that: The connecting clamp (301) is sleeved on the outer side of the bottom end of the resin shell (101) and fixedly connected to the bottom ends of the two covering strips (302); a sliding groove is provided on one side of the connecting clamp (301) close to the covering cover (201); and the positioning protrusion (202) is plugged into the inner side of the sliding groove.

8. The β-Ga2O3 Schottky barrier diode anti-radiation reinforcement structure according to claim 7, characterized in that: The two slots (203) form a plug hole, the sealing sleeve (402) is arranged inside the plug hole, and the upper end of the first connecting strip (401) passes through the sealing sleeve (402) and is in close contact with the outer surface of the resin housing (101).

9. The β-Ga2O3 Schottky barrier diode radiation hardening structure according to claim 8, characterized in that: The upper end of the first connecting strip (401) is connected to the two covering covers (201) via a sealing sleeve (402), the bottom end of the second connecting strip (405) is fitted and fixed to the outer surface of one of the covering covers (201), and the first connecting strip (401) and the second connecting strip (405) are both plugged into the inner side of the mounting cover (403).

10. The β-Ga2O3 Schottky barrier diode anti-radiation reinforcement structure according to claim 9, characterized in that: A radiation sensor is provided on the inner side of the installation cover (403); the first connecting bar (401) and the second connecting bar (405) are fixedly connected to the radiation sensor; and the indicator light (404) passes through the installation cover (403) and is electrically connected to the radiation sensor.

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