Diamond microwave millimeter wave power load

Abstract

The invention provides a diamond microwave and millimeter wave power load, and relates to the technical field of semiconductor materials, the diamond microwave and millimeter wave power load comprises a diamond wafer using diamond as a substrate material, and the surface of the diamond wafer is provided with a groove and a hole for loading through a laser processing technology. The surface of the diamond wafer is provided with a bottom layer metal, a back electrode and a matching electrode which are made of alloy through a magnetron sputtering technology. The invention has the advantages that a high-quality diamond semiconductor material is combined with a microwave thin film process and is applied to the field of microwave and millimeter wave power loads, the surface-mounted and chip-based power load is made, the effects of miniaturization, serialization and high power are achieved, the frequency range and the power range are expanded, and the cost is reduced. A load terminal is provided for radar, satellite communication, 5G / 6G communication and measurement system miniaturization, compared with BeO and ceramic chip products of the same type, the power of the BeO and ceramic chip products is improved to 150W from 2W, the frequency is expanded to DC-40GHz from DC-6GHz, and the size is reduced to one fifth of that of the like products.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor materials, in particular to a diamond microwave millimeter wave power load. Background Art

[0002] The size of the matching load designed by foreign research is generally 4mm×2.54mm×1.5mm (including the lead of the load) and above, with an operating frequency of DC-40GHz, a minimum return loss of 18dB, an average carrying power of 1.25W, and a peak power of 200W (peak power is defined as a 200W pulse lasting 5μs and accounting for 0.1% of the entire bandwidth). Research on miniaturized power loads has begun, and its power continuous wave can reach more than 50W, and the volume is equivalent to the size of 0603 resistors. The overall status of domestic matching loads is concentrated on microwave power loads below 5W, with a size generally larger than 5.08mm×2.54mm and a voltage standing wave ratio of less than 1.5. At present, it is mainly used in homemade modules, and has not yet formed productization, serialization, and miniaturization.

[0003] Moreover, under the condition of small-size structure, the carrying power of the matching load in the microwave and millimeter-wave frequency bands is relatively low. The highest frequency is 18GHz, and the load power is only 20W. Moreover, the price is expensive, which does not meet the requirements of some high-power and high-frequency matching loads. Small-size thin-film loads are currently basically at the 2W level. Combining the methods of designing thin-film matching loads at home and abroad, there is still a lack of a simple and effective method to quickly obtain the model structure diagram of the matching load.

[0004] Therefore, in order to solve the above problems, a simple and effective method for designing thin film matching loads is studied, and a series of thin film microwave and millimeter wave matching loads with high frequency and large load power are designed, which has significant economic value. Summary of the invention

[0005] 1. Technical issues to be resolved In view of the deficiencies in the prior art, the present invention provides a diamond microwave millimeter wave power load, which has the advantages of miniaturization, serialization, high power, expanded frequency range and power range, and solves the problem of small load and low power.

[0006] (II) Technical solution To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a diamond microwave millimeter wave power load, comprising a diamond wafer using diamond as a substrate material, wherein grooves and holes for loading are opened on the surface of the diamond wafer by laser processing technology, and an underlying metal, a back electrode and a matching electrode made of an alloy are provided on the surface of the diamond wafer by magnetron sputtering technology, and a tantalum nitride (TaN) film is provided on the surfaces of the underlying metal, the back electrode and the matching electrode by radio frequency magnetron sputtering and mask patterning technology.

[0007] Preferably, the diamond wafer is polished and ground, and grooves and holes are processed on the surface of the diamond wafer by using laser processing technology.

[0008] Preferably, the bottom metal, back electrode and matching electrode are processed on both sides of the diamond wafer by magnetron sputtering technology, and the alloy material of the bottom metal, back electrode and matching electrode is nickel-tungsten alloy.

[0009] Preferably, the bottom metal, back electrode and matching electrode are processed on both sides of the diamond wafer by magnetron sputtering technology, and the alloy material of the bottom metal, back electrode and matching electrode can also be titanium-tungsten alloy.

[0010] Preferably, the TaN film is prepared on a diamond wafer by radio frequency magnetron sputtering and mask patterning technology, and the TaN film covers the bottom metal, the back electrode and the matching electrode.

[0011] Specifically, by using diamond’s high heat dissipation coefficient and low dielectric constant as an excellent RF microwave dielectric material substrate, a DC-40GHz microwave millimeter wave power load was designed and manufactured, and nickel / titanium tungsten alloy was used as the base material to increase the stability of the product and the reliability of the process. The method for preparing the diamond microwave millimeter wave power load according to claim 1 comprises the following steps: 1) Manufacture and prepare substrates of standard thickness, cut and polish diamonds into required surface-mount diamond wafers according to required standards; 2) Substrate polishing and grinding: polishing and grinding the polished diamond wafer; 3) Cleaning: Clean and dry the ground diamond wafer; 4) Design graphics. According to the design requirements, use computer-aided design and other technologies to draw the graphics required by the load; 5) Mask plate manufacturing: the designed load pattern is placed on the original mask image, and the mask plate is made by microphotography, electron beam exposure and other means; 6) Laser grooving / drilling: using laser processing technology to groove or drill diamond wafers according to the pattern of the mask plate 7) Cleaning: Clean and dry the diamond wafer after laser processing; 8) Magnetron sputtering of the bottom metal 1000 angstroms of nickel / titanium tungsten, using magnetron sputtering technology to cover 1000 angstroms of nickel / titanium tungsten on both sides of the diamond wafer after grooves / holes are engraved; 9) Cleaning: Clean and dry the diamond wafer after sputtering; 10) Design the mask plate, draw the original mask image using computer-aided design and other technologies, and then make the mask plate through microphotography, electron beam exposure and other means; 11) Sputtering TaN film: using radio frequency magnetron sputtering technology to form TaN film on both sides of the diamond after sputtering according to the mask pattern; 12) Photolithography: Laser photolithography resistance trimming technology is used to process diamond wafers with TaN film according to actual needs; 13) Design the mask plate, draw the original mask image using computer-aided design and other technologies, and then make the mask plate through microphotography, electron beam exposure and other means; 14) Sputtering Au thin film: using radio frequency magnetron sputtering technology to form Au thin film on both sides of the diamond after the first photolithography according to the mask pattern; 15) Photolithography: Laser photolithography resistance trimming technology is used to process diamond wafers with Au thin films according to actual needs; 16) Design the mask plate, use computer-aided design and other technologies to draw the original mask image, and then make the mask plate through microphotography, electron beam exposure and other means 17) Sputtering to thicken the Au layer. According to the mask pattern, the radio frequency magnetron sputtering technology is used to increase the thickness of the Au film on both sides of the diamond after the second photolithography; 18) Etching adjustment: according to actual needs, the diamond wafer with thickened Au film is processed by laser lithography resistance adjustment technology, and vacuum annealing is performed at a temperature of 500 degrees Celsius to eliminate defects in the film and improve the stability of the device; 19) Cleaning: cleaning and drying the annealed diamond wafer; 20) Testing: Performing performance tests on the processed diamond wafers; 21) Packaging: Diamond wafers that meet the test requirements are packaged, and diamond wafers that do not meet the test requirements are recycled for processing.

[0012] (III) Beneficial effects Compared with the prior art, the present invention provides a diamond microwave millimeter wave power load, which has the following beneficial effects: The diamond microwave millimeter wave power load combines high-quality diamond semiconductor materials with microwave thin film technology and applies them to the field of microwave millimeter wave power loads. It is made into a patch type and chip type, achieving the effects of miniaturization, serialization and high power, expanding the frequency range and power range, and providing a load terminal for radar, satellite communications, 5G / 6G communications and miniaturization of measurement systems. Compared with the same type of BeO and ceramic sheet products, its power is increased from 2W to 150W, and the frequency is extended from DC-6GHz to DC-40GHz. It also has excellent heat dissipation, reducing its size to one-fifth of similar products, or even smaller. It is very convenient to integrate into various RF microwave products, as well as military, aerospace and other products. Its improved volume and heat dissipation characteristics reduce the requirements for heat dissipation and power supply in system design and application, thereby improving system performance and reducing energy consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 A schematic diagram of the structure proposed by the present invention; Figure 2 The process flow chart proposed by the present invention. DETAILED DESCRIPTION

[0014] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0015] See also Figure 1-2 Embodiment 1, diamond microwave millimeter wave power load, including a diamond wafer using diamond as a substrate material, the surface of the diamond wafer is opened with grooves and holes for loading by laser processing technology, the surface of the diamond wafer is provided with a bottom metal, a back electrode and a matching electrode made of alloy by magnetron sputtering technology, and the surfaces of the bottom metal, the back electrode and the matching electrode are provided with a tantalum nitride (TaN) film by radio frequency magnetron sputtering and mask patterning technology.

[0016] The diamond wafer is polished and ground, and grooves and holes are processed on the surface of the diamond wafer using laser processing technology.

[0017] The bottom metal, back electrode and matching electrode are processed on both sides of the diamond wafer by magnetron sputtering technology, and the alloy material of the bottom metal, back electrode and matching electrode is nickel-tungsten alloy.

[0018] The TaN film is prepared on the diamond wafer using radio frequency magnetron sputtering and mask patterning technology. The TaN film covers the underlying metal, back electrode and matching electrode.

[0019] In the second embodiment, a diamond microwave millimeter wave power load, the bottom metal, the back electrode and the matching electrode are processed on both sides of the diamond wafer by magnetron sputtering technology, and the alloy material of the bottom metal, the back electrode and the matching electrode is titanium-tungsten alloy.

[0020] Specifically, by using diamond’s high heat dissipation coefficient and low dielectric constant as an excellent RF microwave dielectric material substrate, a DC-40GHz microwave millimeter wave power load was designed and manufactured, and nickel / titanium tungsten alloy was used as the base material to increase the stability of the product and the reliability of the process. The method for preparing the diamond microwave millimeter wave power load of claim 1 comprises the following steps: 1) Manufacture and prepare substrates of standard thickness, cut and polish diamonds into required surface-mount diamond wafers according to required standards; 2) Substrate polishing and grinding: polishing and grinding the polished diamond wafer; 3) Cleaning: Clean and dry the ground diamond wafer; 4) Design graphics. According to the design requirements, use computer-aided design and other technologies to draw the graphics required by the load; 5) Mask plate manufacturing: the designed load pattern is placed on the original mask image, and the mask plate is made by microphotography, electron beam exposure and other means; 6) Laser grooving / drilling: using laser processing technology to groove or drill diamond wafers according to the pattern of the mask plate 7) Cleaning: Clean and dry the diamond wafer after laser processing; 8) Magnetron sputtering of the bottom metal 1000 angstroms of nickel / titanium tungsten, using magnetron sputtering technology to cover 1000 angstroms of nickel / titanium tungsten on both sides of the diamond wafer after grooves / holes are engraved; 9) Cleaning: Clean and dry the diamond wafer after sputtering; 10) Design the mask plate, draw the original mask image using computer-aided design and other technologies, and then make the mask plate through microphotography, electron beam exposure and other means; 11) Sputtering TaN film: using radio frequency magnetron sputtering technology to form TaN film on both sides of the diamond after sputtering according to the mask pattern; 12) Photolithography: Laser photolithography resistance trimming technology is used to process diamond wafers with TaN film according to actual needs; 13) Design the mask plate, draw the original mask image using computer-aided design and other technologies, and then make the mask plate through microphotography, electron beam exposure and other means; 14) Sputtering Au thin film: using radio frequency magnetron sputtering technology to form Au thin film on both sides of the diamond after the first photolithography according to the mask pattern; 15) Photolithography: Laser photolithography resistance trimming technology is used to process diamond wafers with Au thin films according to actual needs; 16) Design the mask plate, use computer-aided design and other technologies to draw the original mask image, and then make the mask plate through microphotography, electron beam exposure and other means 17) Sputtering to thicken the Au layer. According to the mask pattern, the radio frequency magnetron sputtering technology is used to increase the thickness of the Au film on both sides of the diamond after the second photolithography; 18) Etching adjustment: according to actual needs, the diamond wafer with thickened Au film is processed by laser lithography resistance adjustment technology, and vacuum annealing is performed at a temperature of 500 degrees Celsius to eliminate defects in the film and improve the stability of the device; 19) Cleaning: cleaning and drying the annealed diamond wafer; 20) Testing: Performing performance tests on the processed diamond wafers; 21) Packaging: Diamond wafers that meet the test requirements are packaged, and diamond wafers that do not meet the test requirements are recycled for processing.

[0021] In summary, the diamond microwave millimeter wave power load combines high-quality diamond semiconductor materials with microwave thin film technology, applies it to the field of microwave millimeter wave power loads, and makes it into a patch type and chip type, achieving the effects of miniaturization, serialization, and high power, expanding the frequency range and power range, and providing a load terminal for radar, satellite communications, 5G / 6G communications, and miniaturization of measurement systems. Compared with the same type of BeO and ceramic sheet products, its power is increased from 2W to 150W, and the frequency is extended from DC-6GHz to DC-40GHz. It also has excellent heat dissipation, reducing its size to one-fifth of similar products, or even smaller. It is very convenient to integrate into various RF microwave products, as well as military, aerospace and other products. Due to the improvement of its volume and heat dissipation characteristics, the requirements for heat dissipation and power supply are reduced in system design and application, thereby improving system performance and reducing energy consumption.

[0022] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "comprise one" do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0023] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. Diamond microwave millimeter wave power load, characterized by: It includes a diamond wafer using diamond as a substrate material, wherein grooves and holes for loading are opened on the surface of the diamond wafer by laser processing technology, and an underlying metal, a back electrode and a matching electrode made of an alloy are provided on the surface of the diamond wafer by magnetron sputtering technology, and a tantalum nitride (TaN) film is provided on the surface of the underlying metal, the back electrode and the matching electrode by radio frequency magnetron sputtering and mask patterning technology.

2. The diamond microwave millimeter wave power load according to claim 1, characterized in that: The diamond wafer is polished and ground, and grooves and holes are processed on the surface of the diamond wafer by using laser processing technology.

3. The diamond microwave millimeter wave power load according to claim 1, characterized in that: The bottom metal, back electrode and matching electrode are processed on both sides of the diamond wafer by magnetron sputtering technology, and the alloy material of the bottom metal, back electrode and matching electrode is nickel-tungsten alloy.

4. The diamond microwave millimeter wave power load according to claim 1, characterized in that: The bottom metal, back electrode and matching electrode are processed on both sides of the diamond wafer by magnetron sputtering technology, and the alloy material of the bottom metal, back electrode and matching electrode can also be titanium-tungsten alloy.

5. The diamond microwave millimeter wave power load according to claim 1, characterized in that: The TaN film is prepared on a diamond wafer by using radio frequency magnetron sputtering and mask patterning technology, and the TaN film covers the bottom metal, the back electrode and the matching electrode.

6. The method for preparing the diamond microwave millimeter wave power load according to claim 1, characterized in that: The following steps are involved: 1) Manufacture and prepare substrates of standard thickness, cut and polish diamonds into required surface-mount diamond wafers according to required standards; 2) Substrate polishing and grinding: polishing and grinding the polished diamond wafer; 3) Cleaning: Clean and dry the ground diamond wafer; 4) Design graphics. According to the design requirements, use computer-aided design and other technologies to draw the graphics required by the load; 5) Mask plate manufacturing: the designed load pattern is placed on the original mask image, and the mask plate is made by microphotography, electron beam exposure and other means; 6) Laser grooving / drilling: using laser processing technology to groove or drill diamond wafers according to the pattern of the mask plate 7) Cleaning: Clean and dry the diamond wafer after laser processing; 8) Magnetron sputtering of the bottom metal 1000 angstroms of nickel / titanium tungsten, using magnetron sputtering technology to cover 1000 angstroms of nickel / titanium tungsten on both sides of the diamond wafer after grooves / holes are engraved; 9) Cleaning: Clean and dry the diamond wafer after sputtering; 10) Design the mask plate, draw the original mask image using computer-aided design and other technologies, and then make the mask plate through microphotography, electron beam exposure and other means; 11) Sputtering TaN film: using radio frequency magnetron sputtering technology to form TaN film on both sides of the diamond after sputtering according to the mask pattern; 12) Photolithography: Laser photolithography resistance trimming technology is used to process diamond wafers with TaN film according to actual needs; 13) Design the mask plate, draw the original mask image using computer-aided design and other technologies, and then make the mask plate through microphotography, electron beam exposure and other means; 14) Sputtering Au thin film: using radio frequency magnetron sputtering technology to form Au thin film on both sides of the diamond after the first photolithography according to the mask pattern; 15) Photolithography: Laser photolithography resistance trimming technology is used to process diamond wafers with Au thin films according to actual needs; 16) Design the mask plate, use computer-aided design and other technologies to draw the original mask image, and then make the mask plate through microphotography, electron beam exposure and other means 17) Sputtering to thicken the Au layer. According to the mask pattern, the radio frequency magnetron sputtering technology is used to increase the thickness of the Au film on both sides of the diamond after the second photolithography; 18) Etching adjustment: according to actual needs, the diamond wafer with thickened Au film is processed by laser photolithography resistance adjustment technology, and vacuum annealing is performed at a temperature of 500 degrees Celsius; 19) Cleaning: cleaning and drying the annealed diamond wafer; 20) Testing: Performing performance tests on the processed diamond wafers; 21) Packaging: Diamond wafers that meet the test requirements are packaged, and diamond wafers that do not meet the test requirements are recycled for processing.

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