SiC umosfet super junction four-terminal device against single event radiation effects and method of fabrication

Abstract

The present disclosure provides a SiC UMOSFET super junction four-terminal device and a preparation method against single particle radiation effects, which can be applied to the technical field of semiconductor devices. The device comprises: a substrate; a drain at the lower surface of the substrate; an N-type epitaxial layer at the upper surface of the substrate; a P column inside the N-type epitaxial layer, the thickness of the P column in the vertical direction being not more than the thickness of the N-type epitaxial layer in the vertical direction; a P base region at one side close to the upper surface of the N-type epitaxial layer and the upper surface of the P column; a source region at one side close to the upper surface of the P base region; a gate trench at one side close to the upper surface of the N-type epitaxial layer; a P+ injection region below the bottom of the gate trench; an N+ injection region inside the P+ injection region; a control electrode formed by a control electrode trench inside the N+ injection region; a gate dielectric layer at the sidewall of the gate trench; a gate at the upper surface of the gate dielectric layer; an interlayer dielectric at the upper surface of the gate; and a source at the upper surface of the interlayer dielectric and part of the source region.

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