Photoelectric device, preparation method thereof and display device

Abstract

The invention belongs to the technical field of display, and relates to a photoelectric device, a preparation method thereof and a display device. According to the preparation method of the photoelectric device, a prefabricated member of the photoelectric device is provided, the prefabricated member of the photoelectric device comprises a bottom electrode and a carrier transport layer which are stacked, and the carrier transport layer comprises an inorganic nano material; forming a top electrode on the carrier transport layer to form a photoelectric device precursor; and carrying out reduction treatment on the photoelectric device precursor to obtain the photoelectric device. According to the invention, the precursor of the photoelectric device is subjected to reduction treatment, so that a metal oxide influencing the carrier transmission efficiency is prevented from existing in an interface between the carrier transmission layer and the electrode, and the carrier transmission efficiency and the optical display effect are further improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an optoelectronic device and a method for preparing the same, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). OLEDs have become the mainstream technology in the field of display technology due to their excellent display performance, such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLEDs have the advantages of saturated color of emitted light, adjustable wavelength, low start-up voltage, good solution processability, easy fine control of quantum dots, and high quantum yield of photoluminescence and electroluminescence. In recent years, they have become a strong competitor to OLEDs.

[0003] In the prior art, a carrier functional layer is provided in a photoelectric device, which is usually made of inorganic nanomaterials. When the inorganic nanomaterials come into contact with electrodes, the electron injection efficiency decreases, thereby causing the device efficiency of the photoelectric device to decrease. Summary of the invention

[0004] Based on this, the embodiments of the present application provide an optoelectronic device and a method for manufacturing the same, and a display device.

[0005] In order to solve the above technical problems, the present application provides a method for preparing a photoelectric device. The method for preparing a photoelectric device adopts the following technical solution:

[0006] A method for preparing a photoelectric device, the method comprising:

[0007] Providing an optoelectronic device preform, the optoelectronic device preform comprising a bottom electrode and a carrier transport layer stacked, the carrier transport layer comprising an inorganic nanomaterial;

[0008] forming a top electrode on the carrier transport layer to form a photoelectric device precursor;

[0009] The photoelectric device precursor is subjected to reduction treatment to obtain the photoelectric device.

[0010] Correspondingly, the present application also provides a photoelectric device, which includes a bottom electrode, a carrier transport layer and a top electrode, wherein the carrier transport layer includes an inorganic nanomaterial; the top electrode includes a second sub-electrode, and a first electrode material obtained by reduction treatment is provided between the second sub-electrode and the carrier transport layer.

[0011] Correspondingly, the present application also provides a display device, which includes the optoelectronic device as described above.

[0012] Compared with the prior art, the embodiments of the present application have the following beneficial effects:

[0013] The photoelectric device precursor is subjected to reduction treatment to avoid the presence of metal oxides that affect the carrier transport efficiency at the interface between the carrier transport layer and the electrode, thereby improving the carrier transport efficiency and the optical display effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the solutions in the present application or the prior art, a brief introduction is given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0015] Figure 1 is a flow chart of a method for preparing a photoelectric device according to an embodiment of the present application;

[0016] Figure 2 It is a graph showing the relationship between etching cycles and atomic concentration changes of each element in an optoelectronic device;

[0017] Figure 3 is the X-ray photon spectrum of Ag in optoelectronic devices;

[0018] Figures 4 to 6 is a structural diagram of a photoelectric device in the method for preparing a photoelectric device in Example 1 of the present application;

[0019] Figures 7 and 8 is a structural diagram of a photoelectric device in the method for preparing a photoelectric device in Comparative Example 2 of the present application;

[0020] Figures 9 and 10 is a structural diagram of a photoelectric device in the method for preparing a photoelectric device in Comparative Example 3 of the present application;

[0021] Fig.11 It is the Ag3d test spectrum of Comparative Example 1 and Example 1 of the present application.

[0022] Reference numerals:

[0023] Optoelectronic device 10 , substrate 100 , anode 200 , hole functional layer 300 , light emitting layer 400 , electron functional layer 500 , cathode 600 , first cathode 610 , second cathode 620 , metal oxide 630 , CPL layer 700 . DETAILED DESCRIPTION

[0024] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0025] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0026] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0027] In the present application, "at least one" means one or more, and "plurality" means two or more. "One or more", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of A, b, or c", or "at least one of A, b, and c" can all mean: A, b, c, A-b (i.e. A and b), A-c, b-c, or A-b-c, where A, b, and c can be single or multiple, respectively.

[0028] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0029] See also Figure 2 and Figure 3In actual work, the inventors conducted XPS (full name: X-ray Photoelectron Spectroscopy) test on QLED devices and found that the half-width of the Ag3d peak at the ZnMgO / Ag interface is larger than the half-width of the single Ag (about 1eV), indicating that the Ag at the ZnMgO / Ag interface is in an oxidized state.

[0030] The above test results show that the surface of the material of the carrier transport layer in the prior art (such as zinc oxide) usually has more defects and active sites. Therefore, after the carrier transport layer contacts the top electrode (such as silver), the part of the top electrode or the bottom electrode that contacts the electronic functional layer will be oxidized. At this time, the contact surface of the top electrode and the carrier transport layer will generate metal oxide (such as silver oxide), which will hinder the injection and transmission of electrons, resulting in degradation of the performance of the optoelectronic device and poor optical display effect. If a film layer is simply added between the carrier transport layer and the top electrode, although the film layer can isolate the carrier transport layer and the electrode, it will also block the transmission of carriers, making the carrier transmission efficiency even lower than that of the prior art.

[0031] To solve the above problems, please refer to Figure 1 , the present application embodiment provides a method for preparing a photoelectric device, the method comprising:

[0032] S100, providing an optoelectronic device preform, wherein the optoelectronic device preform comprises a bottom electrode and a carrier transport layer which are stacked, and the carrier transport layer comprises an inorganic nanomaterial;

[0033] S200, forming a top electrode on the carrier transport layer to form a photoelectric device precursor;

[0034] S300, performing a reduction treatment on the photoelectric device precursor to obtain the photoelectric device.

[0035] It is understandable that in step S100, the top electrode is in contact with the carrier transport layer, and the portion of the top electrode in contact with the carrier transport layer will be oxidized to form a metal oxide that blocks carrier transport, which is not conducive to the performance of the optoelectronic device. Therefore, the present application performs a reduction treatment on the optoelectronic device precursor in step S300 to reduce the metal oxide to an electrode material, thereby preventing it from hindering the injection and transport of carriers, thereby improving the electronic display efficiency of the optoelectronic device.

[0036] For example, the carrier transport layer is an electronic functional layer, the top electrode is a metal electrode, and the interface between the top electrode and the electronic functional layer reacts to form a metal oxide (such as Ag). 2 O、Al 2 O 3 、MoO 3、Au 2 O 3 , CaO, MgO, BaO, etc.), and the photoelectric device precursor is reduced, so that the metal oxide is reduced to the electrode material again, avoiding its influence on the electron transmission efficiency, thereby improving the electron transmission efficiency and the optical display effect.

[0037] It is understood that the method of forming the top electrode includes but is not limited to evaporation, deposition, and solution method. The reduction treatment includes but is not limited to electrochemical reduction, thermal reduction, gas phase reduction, plasma reduction, solution reduction, etc. Step S300 can also be performed after the optoelectronic device is packaged.

[0038] Furthermore, the step of reducing the photoelectric device precursor includes: placing the photoelectric device precursor in a reducing agent atmosphere for a reduction reaction. Compared with the solution reduction method and other methods, the thermal reduction method can prevent the film layer from being immersed in the reducing agent solution and reacting with the electronic functional layer, the light-emitting layer, the hole functional layer, the anode and other film layers, resulting in degradation of the film layer. At the same time, the high temperature of the heat treatment can promote the reduction reaction, so that the reducing agent in the reducing agent atmosphere reacts more quickly with the metal oxide formed at the contact interface between the carrier transport layer and the top electrode, thereby improving production efficiency; moreover, the heat treatment can ensure that the top electrode is reduced to the same degree by controlling the temperature of each part of the top electrode.

[0039] Furthermore, in the step of placing the photoelectric device precursor in a reducing agent atmosphere for reduction reaction, the photoelectric device precursor is also subjected to heat treatment, the heating temperature is 100°C to 200°C; and / or the heating time is 5min to 30min; and / or the humidity of the reducing agent atmosphere is 50%RH to 99.5%RH. During the heating treatment, the temperature will affect the properties of the reduction product, the humidity of the reducing agent atmosphere will affect the degree of competitive reaction between oxygen and the reducing agent, and the heating time will affect the uniformity of the reduction reaction and the life of the device. The heating temperature of 100°C to 200°C in the embodiment of the present application can make the oxide reduction more thorough. The heating time of 5min to 30min can completely reduce the metal oxide formed at the contact interface between the carrier transport layer and the top electrode. It is understood that the heating temperature can be any one of 100° C., 110° C., 120° C., 130° C., 140° C., 150° C., 160° C., 170° C., 180° C., 190° C., and 200° C., or a range formed between any two of the values. The heating time can be any one of 5 min, 10 min, 15 min, 20 min, 25 min, and 30 min, or a range formed between any two of the values.

[0040] Furthermore, the reducing agent includes H 2 , CO, HCHO, H2 O 2 , H 2 O、N 2 Any one or a combination thereof. It is understandable that the type of reducing agent will affect the effect and cost of reduction. Therefore, in the actual production process, the above reducing agent can be selected to reduce the top electrode according to the top electrode material, process conditions, and production cycle requirements. Taking the top electrode as Ag as an example, H 2 O is used to reduce it. The heating temperature is 100-150°C and the heating time is 10-60 minutes. The reduction reaction formula is: Ag 2 O+H 2 O→2Ag + +2OH - Under this condition, it can be ensured that Ag is completely reduced. Finally, the AgO at the junction of the top electrode and the carrier transport layer is reduced to Ag.

[0041] For example, when the reducing agent is H 2 When the reduction reaction is: 2Ag 2 O+H 2 →4Ag+H 2 O; when the reducing agent is CO, the reduction reaction formula is: 2Ag 2 O+CO→4Ag+CO2; when the reducing agent is HCHO, the reduction reaction formula is: HCHO+2Ag 2 O→H 2 O+CO 2 +4Ag; when the reducing agent is H 2 O 2 When the reduction reaction is: Ag 2 O+H 2 O 2 →4Ag+2H 2 O+O 2 ; When the reducing agent is Ag, the reduction reaction formula is: 2Ag 2 O→4Ag+O 2 (Silver oxide decomposes by heating in a nitrogen environment).

[0042] Further, the reducing agent atmosphere includes reducing gas; and / or the reducing agent atmosphere includes reducing gas and protective gas; the reducing gas includes H 2 , CO, HCHO, H 2 O 2 , H 2 O、N 2Any one or a combination thereof; and / or the protective gas includes any one or a combination of He, Ne, Ar, Kr, Xe, and Rn; and / or the volume ratio of the reducing gas to the protective gas is (1 to 9): 10. In the actual production process, the reducing gas can be directly introduced to form a reducing atmosphere so that the metal oxide is reduced. It is also possible to increase the protective gas and adjust the volume ratio of the protective gas to the reducing gas while introducing the reducing gas to control the content of the reducing gas in the reducing agent atmosphere, thereby controlling the reduction degree and reduction speed of the metal oxide. It is understandable that the volume ratio of the reducing gas to the protective gas can be any one of 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, and 0.9, or a range formed between any two values.

[0043] For further information, please refer to Figures 4 to 6 The optoelectronic preform further includes a light-emitting layer disposed between the bottom electrode and the carrier transport layer, and / or the optoelectronic device preform further includes a hole functional layer disposed between the bottom electrode and the light-emitting layer.

[0044] Further, the material of the light-emitting layer includes any one or a combination of single structure quantum dots and core-shell structure quantum dots, the material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots are respectively selected from any one or a combination of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds, and the shell layer of the core-shell structure quantum dots includes one or more layers; II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSe One or more of CdS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and Group IV-VI compounds include One or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, III-V compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, One or more of GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, I-III-VI compounds including CuInS 2 、CuInSe 2 AgInS 2 One or more of; and / or

[0045] The materials of the hole functional layer include TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCAATAA, TCCAA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tinides, doped graphene, undoped graphene and C60, or any one or a combination thereof.

[0046] like Figures 7 and 8 As shown, taking the case where the carrier transport layer is the electronic functional layer 500 and the top electrode is the cathode 600 as an example, if a cathode of a target thickness is formed directly on the electronic functional layer 500, and then the metal oxide 630 formed between the cathode and the electronic functional layer 500 is reduced, the thickness of the cathode may be too thick, thereby affecting the reduction degree of the metal oxide 630, resulting in the metal oxide 630 not being completely reduced to the cathode 600.

[0047] Further, the step of forming a top electrode on the carrier transport layer includes: forming a first sub-electrode on the carrier transport layer;

[0048] After the step of reducing the photoelectric device precursor, the method further includes forming a second sub-electrode on the first sub-electrode.

[0049] Exemplarily, the first sub-electrode is a first cathode 610 , and the second sub-electrode is a second cathode 620 .

[0050] In the embodiment of the present application, a first cathode 610 (first sub-electrode) of a first thickness is first formed on the electronic functional layer 500, and an oxidation reaction occurs between the first cathode 610 and the electronic functional layer 500 to form a metal oxide 630. Then, the first cathode 610 is subjected to a reduction treatment to completely reduce the first cathode 610; finally, a second cathode 620 (second sub-electrode) is formed on the first cathode 610, and the sum of the thicknesses of the first cathode 610 and the second cathode 620 is the target thickness. This can further improve the reduction degree and reduction efficiency of the reduction reaction, and form a cathode of the target thickness to improve the optical display effect of the optoelectronic device.

[0051] Understandably, please refer to Figures 9 and 10 Alternatively, the cathode 600 and the CPL layer 700 of target thickness may be formed on the electronic functional layer 500, and then reduction treatment may be performed to reduce the metal oxide 630 to the cathode 600. It is understood that the materials of the first sub-electrode and the second sub-electrode layer may be the same or different.

[0052] Furthermore, the step of forming a top electrode on the carrier transport layer comprises: depositing the top electrode on the carrier functional layer at a deposition rate of Deposition methods include PVD, CVD, solution deposition, PECVE, electrochemical deposition and other methods. The deposition environment can be in a vacuum evaporation chamber, and the deposition rate can be controlled in the range of Within this deposition rate, a uniform and dense top electrode film layer can be achieved, which helps to improve the stability and reliability of optoelectronic devices; at the same time, it can shorten the preparation time and improve production efficiency.

[0053] It is understood that the deposition rate of the cathode includes any one of 0.1 0 / s, 0.5 0 / s, 1 0 / s, 1.5 0 / s, 2 0 / s, 2.5 0 / s, 3 0 / s, 3.5 0 / s, 4 0 / s, 4.5 0 / s, 50 / s, 5.5 0 / s, and 6 0 / s, or a range formed between any two values. When the cathode includes a first cathode and a second cathode, since the thickness of the second cathode and the first cathode is different and both are less than the preset thickness, and the second cathode is not prepared on the electronic functional layer, there is no need to worry about the degradation of the electronic functional layer, so the deposition speed of forming the second cathode can be faster, for example, the deposition speed of the first cathode is 0.1 0 / s, and the deposition speed of the second cathode is 0.5 0 / s.

[0054] Further, the inorganic nanomaterial includes any one or a combination of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, and barium titanate, and the doped element includes any one or a combination of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; or

[0055] The material of the carrier functional layer is an N-type inorganic semiconductor nanomaterial, and / or

[0056] The material of the top electrode includes metal, the material of the bottom electrode includes metal or a composite electrode of metal sandwiched between doped or undoped transparent metal oxides, and the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2Any one or a combination of the metal includes any one or a combination of Ag, Al, Mo, Au, Ca, Mg and Ba.

[0057] It is understood that the metal oxide formed at the contact interface between the top electrode and the carrier transport layer includes Ag 2 O、Al 2 O 3 、MoO 3 、Au 2 O 3 , CaO, MgO and BaO or any one or a combination thereof.

[0058] Correspondingly, an embodiment of the present application also provides a photoelectric device 10, which includes a bottom electrode, a carrier transport layer and a top electrode, wherein the carrier transport layer includes an inorganic nanomaterial; the top electrode includes a second sub-electrode, and a first electrode material obtained by reduction treatment is provided between the second sub-electrode and the carrier transport layer.

[0059] Furthermore, the materials of the second sub-electrode and the first electrode include metal, and the material of the bottom electrode includes metal or a composite electrode including metal sandwiched between doped or undoped transparent metal oxides.

[0060] Furthermore, the materials of the first sub-electrode and the second sub-electrode are the same or different.

[0061] Please refer to Figure 6 The optoelectronic device includes a substrate 100 and an anode 200, a hole functional layer 300, a light emitting layer 400, an electronic functional layer 500, and a cathode 600 stacked on the substrate 100 in sequence. After the top electrode (cathode 600) and the carrier transport layer (electronic functional layer 500) undergo an oxidation reaction, the cathode 600 of the optoelectronic device 10 undergoes a reduction treatment, and the metal oxide 630 between the cathode 600 and the electronic functional layer 500 is reduced, so the electron transmission efficiency and optical display effect of the optoelectronic device 10 are improved. The materials of each layer in the optoelectronic device have been listed above and will not be repeated here.

[0062] Furthermore, the top electrode further includes a first sub-electrode, the first sub-electrode includes the first electrode material, and the first sub-electrode is arranged between the carrier transport layer and the second sub-electrode; and / or

[0063] The thickness of the second sub-electrode is 10 nm to 100 nm; and / or

[0064] The thickness of the bottom electrode is 10nm to 100nm; and / or

[0065] The thickness of the first sub-electrode is 0.1 nm to 20 nm.

[0066] The thickness of the second sub-electrode and / or the bottom electrode is 10nm to 100nm, and the thickness of the first sub-electrode is 0.1nm to 20nm. Within this thickness range, the electron injection efficiency of the first sub-electrode, the second sub-electrode and / or the bottom electrode is high, and the recombination loss of carriers can be reduced, while ensuring the stability of the optoelectronic device 10. It can be understood that the thickness of the top electrode and / or the bottom electrode can be any one of 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm or a range formed between any two values, and the thickness of the first sub-electrode can be any one of 0.1nm, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm, 20nm or a range formed between any two values.

[0067] Accordingly, an embodiment of the present application also provides a display device, which includes the above-mentioned optoelectronic device. At this time, because the metal oxide formed at the contact interface between the carrier transport layer and the top electrode in the optoelectronic device is subjected to reduction treatment, its content is less or has been completely eliminated, so the electron transmission efficiency and optical display effect of the optoelectronic device are improved. It is understandable that the display device can be any electronic product with a display function, and the electronic product includes but is not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a car display, a television or an e-book reader, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0068] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0069] Example 1

[0070] Step A, providing a preform. The preform is provided with an electronic functional layer, and the material of the electronic functional layer is nickel oxide.

[0071] Step B, forming a first cathode. The preform is transferred to a vacuum evaporation chamber for deposition to form a first cathode with a thickness of 5 nm. The deposition rate is The material of the first cathode is Ag; in this case, please refer to Figure 4 The first cathode at least partially forms a metal oxide (Ag 2 O).

[0072] Step C, restore process. Please refer to Figure 5 , transfer metal oxides to H 2 The metal oxide is heated in an O reducing agent atmosphere to reduce the metal oxide to the first cathode at a heating temperature of 150° C. for 15 min.

[0073] Step D, forming a second cathode. The first cathode is transferred to a vacuum evaporation chamber for deposition to form a second cathode with a thickness of 5 nm. The deposition rate is The material of the first cathode is Ag.

[0074] Step E: depositing a CPL layer. The second cathode is transferred to a vacuum evaporation chamber, and a CPL layer is further deposited on the second cathode.

[0075] Step F, packaging. Please refer to Figure 6 , packaged to form a complete optoelectronic device.

[0076] Example 2

[0077] Example 2 is basically the same as Example 1, except that in step B, the material of the first cathode is Al (to form Al2O3 after oxidation); in step C, the reducing agent atmosphere is H 2 .

[0078] Example 3

[0079] Example 3 is substantially the same as Example 1, except that in step B, the material of the first cathode is Ag; and in step C, the reducing agent atmosphere is HCHO.

[0080] Example 4

[0081] Example 4 is basically the same as Example 1, except that the material of the electronic functional layer is titanium oxide, in step B, the material of the first cathode is Ag, and in step C, the reducing agent atmosphere is H 2 .

[0082] Example 5

[0083] Example 5 is basically the same as Example 1, except that the material of the electronic functional layer is titanium oxide, in step B, the material of the first cathode is Mg (forming MgO after oxidation); in step C, the reducing agent atmosphere is CO.

[0084] Comparative Example 1

[0085] Comparative Example 1 is substantially the same as Example 1, except that the reduction treatment in step 3 is not performed.

[0086] Comparative Example 2

[0087] This embodiment provides a method for preparing a photoelectric device, and the preparation method is as follows:

[0088] Step 1: providing a prefabricated part. The prefabricated part is provided with an electronic functional layer, and the material of the electronic functional layer is nickel oxide.

[0089] Step 2, forming a cathode. The preform is transferred to a vacuum evaporation chamber for deposition to form a cathode with a thickness of 5 nm. The deposition rate is 0.1 A / s, and the cathode material is Ag. At this time, please refer to Figure 7 , at least a portion of the cathode in contact with the electronic functional layer forms a metal oxide.

[0090] Step 3, restore process. Please refer to Figure 8 , transfer the cathode to H 2 The heating treatment is carried out in an O reducing agent atmosphere to reduce the metal oxide to a cathode, the heating temperature is 150°C, the heating time is 15 min, and the humidity range is 80% RH.

[0091] Step 5: Depositing a CPL layer: The cathode is transferred to a vacuum evaporation chamber, and a CPL layer is further deposited on the cathode.

[0092] Step 6: Packaging: Packaging to form a complete optoelectronic device.

[0093] Comparative Example 3

[0094] This embodiment is basically the same as Comparative Example 2, except that, please refer to Fig. 9 and Fig.10 In step E, after the CPL layer is deposited, the reduction treatment in step C is performed.

[0095] XPS was used to observe Example 1 and Comparative Example 1, and the results were Fig.11 .Depend on Fig.11 It can be seen that the half-peak width of the Ag3d peak of Comparative Example 1 is much larger than that of Example 1, that is, after the reduction treatment, most of the silver oxide between the carrier transport layer and the top electrode is reduced to silver element.

[0096] The service life test instrument and the brightness detection instrument measure the working life, electrical performance and brightness of the optoelectronic device at a constant current of 63.7 mA / cm2 and a brightness of 1000 nits, and the results are shown in Table 1.

[0097] Table 1:

[0098] project Voltage (V) Efficiency (cd / A) Lifespan (h) Example 1 4.5 115％ 130％ Example 2 4.4 105％ 110％ Example 3 4.5 110％ 115％ Example 4 4.5 115％ 110％ Example 5 4.2 105％ 105％ Comparative Example 1 4.8 100％ 100％ Comparative Example 2 4.5 110％ 120％ Comparative Example 3 4.5 105％ 115％

[0099] Please refer to Table 1, and take the life and efficiency of the comparative example as the reference life and reference voltage. By comparing Examples 1 to 5 and Comparative Example 1, it can be seen that by reducing the cathode, the life and luminous efficiency of the photoelectric device are improved, and the driving voltage is also reduced. At the same time, the metal oxides formed by cathodes of different materials are also different, but the metal oxides can be reduced, which ultimately improves the life and luminous efficiency of the photoelectric device and reduces the driving voltage.

[0100] By comparing Example 3 and Example 4, it can be seen that the type of reducing agent will affect the luminous efficiency and service life of the photoelectric device finally formed, that is, the type of reducing agent will affect the degree of the reduction reaction.

[0101] By comparing Example 1 and Comparative Example 2, it can be seen that the method of reducing the first cathode immediately after the first cathode is generated and then forming the second cathode on the first cathode can further improve the reduction efficiency of the cathode, thereby further improving the life and efficiency of the photoelectric device.

[0102] By comparing Example 2 and Comparative Example 3, it can be seen that if the reduction treatment is performed after the CPL layer is formed, the reduction degree of the cathode may be further reduced.

[0103] In summary, the optoelectronic device prepared by the method for preparing the optoelectronic device provided in the present application has the advantages of long life, high luminous efficiency and low driving voltage.

[0104] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

[0105] Obviously, the embodiments described above are only some embodiments of the present application, rather than all embodiments. The preferred embodiments of the present application are given in the accompanying drawings, but they do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive. Although the present application is described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions recorded in the aforementioned specific implementation methods, or to perform equivalent replacement of some of the technical features therein. Any equivalent structure made using the contents of the specification and drawings of this application, directly or indirectly used in other related technical fields, is similarly within the scope of patent protection of this application.

[0106] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, combinations, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present application, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A method for preparing a photoelectric device, It is characterized in that The method comprises: Providing an optoelectronic device preform, the optoelectronic device preform comprising a bottom electrode and a carrier transport layer stacked, the carrier transport layer comprising an inorganic nanomaterial; forming a top electrode on the carrier transport layer to form a photoelectric device precursor; The photoelectric device precursor is subjected to reduction treatment to obtain the photoelectric device.

2. The method for preparing a photoelectric device according to claim 1, It is characterized in that The step of performing reduction treatment on the photoelectric device precursor comprises: The photoelectric device precursor is placed in a reducing agent atmosphere to perform a reduction reaction.

3. The method for preparing a photoelectric device according to claim 2, It is characterized in that The step of placing the photoelectric device precursor in a reducing agent atmosphere for a reduction reaction further includes heating the photoelectric device precursor; The heating temperature of the heating treatment is 100°C to 200°C; and / or The heating treatment time is 5 min to 30 min.

4. The method for preparing a photoelectric device according to claim 2, It is characterized in that The reducing agent atmosphere comprises a reducing gas; and / or The reducing agent atmosphere includes reducing gas and protective gas; The reducing gas includes H 2 , CO, HCHO, H 2 O 2 , H 2 O、N 2 Any one or any combination of; and / or The protective gas comprises any one of He, Ne, Ar, Kr, Xe, Rn or a combination thereof; and / or The volume ratio of the reducing gas to the protective gas is (1-9):

10.

5. The method for preparing a photoelectric device according to claim 1, It is characterized in that The step of forming a top electrode on the carrier transport layer includes: forming a first sub-electrode on the carrier transport layer; After the step of reducing the photoelectric device precursor, the method further includes forming a second sub-electrode on the first sub-electrode.

6. The method for preparing a photoelectric device according to claim 1, It is characterized in that The step of forming a top electrode on the carrier transport layer comprises: depositing the top electrode on the carrier functional layer at a deposition rate of 7. The method for preparing a photoelectric device according to claim 5, It is characterized in that The inorganic nanomaterials include any one or a combination of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, and barium titanate, and the doped elements include any one or a combination of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; and / or The material of the top electrode includes metal, the material of the bottom electrode includes metal or a composite electrode of metal sandwiched between doped or undoped transparent metal oxides, and the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2 Any one or a combination thereof, wherein the metal includes any one or a combination thereof of Ag, Al, Mo, Au, Ca, Mg and Ba; and / or The materials of the first sub-electrode and the second sub-electrode are the same or different; and / or The optoelectronic device preform further comprises a light-emitting layer disposed between the bottom electrode and the carrier transport layer; and / or The photoelectric device preform further comprises a hole functional layer disposed between the bottom electrode and the light emitting layer; The material of the light-emitting layer includes any one or a combination of single-structure quantum dots and core-shell structure quantum dots, the material of the single-structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots are respectively selected from any one or a combination of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds, and the shell layer of the core-shell structure quantum dots includes one or more layers; the II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, One or more of CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, wherein the Group IV-VI compound comprises Sn The III-V group compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, G One or more of aPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes CuInS 2 、CuInSe 2 AgInS 2 One or more of; and / or The material of the hole functional layer includes any one of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCAATAA, TCCAA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-Nphenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tinides, doped graphene, undoped graphene and C60 or a combination thereof.

8. A photoelectric device, It is characterized in that The optoelectronic device comprises a bottom electrode, a carrier transport layer and a top electrode, wherein the carrier transport layer comprises an inorganic nanomaterial; The top electrode includes a second sub-electrode, and a first electrode material obtained by reduction treatment is arranged between the second sub-electrode and the carrier transport layer.

9. The optoelectronic device according to claim 8, It is characterized in that The top electrode further includes a first sub-electrode, the first sub-electrode includes the first electrode material, and the first sub-electrode is disposed between the carrier transport layer and the second sub-electrode; and / or The thickness of the second sub-electrode is 10 nm to 100 nm; and / or The thickness of the bottom electrode is 10nm to 100nm; and / or The thickness of the first sub-electrode is 0.1 nm to 20 nm.

10. The optoelectronic device according to claim 9, It is characterized in that The optoelectronic device further comprises a light-emitting layer, wherein the light-emitting layer is arranged between the bottom electrode and the carrier transport layer; and / or The photoelectric device further comprises a hole functional layer, wherein the hole functional layer is arranged between the bottom electrode and the light emitting layer; and / or The inorganic nanomaterials include any one or a combination of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, lithium zinc oxide, indium tin oxide, cadmium sulfide, zinc sulfide, molybdenum sulfide, tungsten sulfide, copper sulfide, zinc tin, indium phosphide, gallium phosphide, copper indium sulfide, copper gallium sulfide, and barium titanate, and the doped elements include any one or a combination of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; and / or The materials of the second sub-electrode and the first electrode include metal, and the material of the bottom electrode includes metal or a composite electrode including metal sandwiched between doped or non-doped transparent metal oxides; and / or The first sub-electrode and the second sub-electrode may be made of the same or different materials.

11. A display device, It is characterized in that The display device comprises the optoelectronic device according to any one of claims 8 to 10.

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