Wafer heating and etching equipment

Abstract

The present invention provides a wafer heating and etching device, comprising: a driving mechanism, a heating and etching mechanism, and a wafer supporting device for clamping a wafer, wherein the heating and etching mechanism is arranged above the wafer supporting device, and the driving mechanism drives the heating and etching mechanism to rise and fall in a direction coaxial with the wafer supporting device; the heating and etching mechanism comprises a mounting seat and a heating plate, the driving mechanism is respectively connected to a plurality of connecting parts, the heating plate is assembled on the side of the mounting seat facing the wafer supporting device, and the mounting seat and the heating plate enclose a receiving chamber, in which an etching liquid path is installed; the driving mechanism drives the heating plate to move closer to or farther from the wafer, and the heating plate has a liquid outlet connected to the etching liquid path, and a reagent is introduced into the etching liquid path and sprayed onto the wafer surface through the liquid outlet. The present invention is used to solve the problem of difficulty in controlling the heating temperature of the wafer surface in the prior art, and effectively ensures the effect of wafer surface heating and etching efficiency by directly heating the upper surface of the wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor etching, and in particular to a wafer heating etching device. Background Art

[0002] The purpose of semiconductor etching is to transfer the photoresist pattern obtained by lithography to the thin film on the surface of the wafer, that is, to use the covering and protective effect of the photoresist film to remove the thin film without photoresist protection by chemical reaction or physical action to achieve the purpose of pattern transfer.

[0003] During the wafer etching process, commonly used etchants such as phosphoric acid, hydrofluoric acid, buffered oxide etchants, etc. need to react effectively with the thin film on the wafer surface under certain temperature conditions. Furthermore, heating can provide additional heat to intensify the molecular thermal motion of the etchant, thereby increasing its reaction rate with the wafer surface material. The heating plate in the existing wafer etching equipment is usually located below the wafer, spraying the etching agent onto the front of the wafer, thereby achieving the purpose of etching the wafer at a suitable temperature. In the above-mentioned prior art, since the heating plate is arranged below the wafer and is usually integrated with the wafer support and clamping mechanism, the distance between the heating plate and the wafer remains constant, and it is difficult to adjust the relative distance between the heating plate and the wafer according to the heating needs of the wafer, resulting in the problem that the heating effect of the wafer is difficult to properly control, and the heat needs to be transferred from the lower surface of the wafer to the upper surface, there is a certain degree of heat loss, which affects the heating and etching efficiency of the wafer.

[0004] In view of this, it is necessary to improve the wafer heating and etching equipment in the prior art to solve the above problems. It should be noted that the above introduction to the background technology is only for the convenience of providing a clear and complete description of the technical solutions of this application and facilitating the understanding of those skilled in the art. It cannot be assumed that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of this application. Summary of the Invention

[0005] The purpose of the present invention is to disclose a wafer heating and etching device to solve the problem in the prior art that the heating plate is arranged under the wafer and is integrated with the wafer support and clamping device, which makes it difficult to adjust the distance between the heating plate and the wafer, resulting in difficulty in controlling the heating temperature of the wafer surface. By directly heating the upper surface of the wafer, the heating and etching efficiency of the wafer surface can be effectively guaranteed.

[0006] To achieve the above-mentioned object, the present invention provides a wafer heating and etching device, comprising: a driving mechanism, a heating and etching mechanism, and a wafer supporting device for clamping a wafer, wherein the heating and etching device is arranged above the wafer supporting device, and the driving mechanism drives the heating and etching mechanism to rise and fall in a direction coaxial with the wafer supporting device;

[0007] The heating etching mechanism includes a mounting seat and a heating plate, the mounting seat having no less than three connecting parts, the driving mechanism being connected to the plurality of connecting parts respectively, the heating plate being mounted on a side of the mounting seat facing the wafer supporting device, and the mounting seat and the heating plate enclose a receiving cavity, in which an etching liquid path is installed;

[0008] The heating plate is arranged parallel to the plane where the wafer is located, and the driving mechanism drives the heating plate to move closer to or away from the wafer. The heating plate has a liquid outlet connected to the etching liquid path, and the agent is introduced into the etching liquid path and sprayed onto the wafer surface through the liquid outlet.

[0009] As a further improvement of the present invention, the driving mechanism includes a driving motor, a driving wheel and a plurality of driven wheels, the driving end of the driving motor is coaxially arranged with the driving wheel, and the driving wheel drives the plurality of driven wheels to rotate synchronously through a transmission belt;

[0010] The driving mechanism also includes a lifting mechanism having the same number as the connecting parts, the lifting mechanism driving rod and a lifting seat, the bottom end of the driving rod is coaxially fixed to the driven wheel, the lifting seat is threadedly engaged with the driving rod and displaced along the height direction of the driving rod, and the top end of the lifting seat is fixed to the connecting part.

[0011] As a further improvement of the present invention, it also includes: a cleaning mechanism, the cleaning mechanism has a swing arm mechanism, the liquid outlet nozzle of the cleaning mechanism is assembled on the top of the swing arm mechanism, the liquid outlet nozzle has no less than two nozzles, and the swing arm mechanism is driven to swing back and forth by a driving device so that the cleaning agent sprayed by the liquid outlet nozzle covers the surface of the wafer.

[0012] As a further improvement of the present invention, the etching liquid circuit includes a first liquid inlet valve and a phosphoric acid pipeline, the first liquid inlet valve is fixedly connected to the mounting seat, one end of the phosphoric acid pipeline is connected to the first liquid inlet valve, and the other end is connected to the liquid outlet through an interface of a first three-way connector, and a heating wire is provided around the phosphoric acid pipeline;

[0013] A cleaning liquid circuit is also provided in the accommodating chamber, and the cleaning liquid circuit includes a second liquid inlet valve and a deionized water pipeline. The second liquid inlet valve is fixedly connected to the mounting seat. One end of the deionized water pipeline is connected to the second liquid inlet valve, and the other end is connected to the liquid outlet through another interface of the first three-way joint.

[0014] As a further improvement of the present invention, the etching liquid circuit also has a connecting tube and a second three-way joint, one end of the connecting tube is connected to the third interface of the first three-way joint, the other end of the connecting tube is connected to an interface of the second three-way joint, the second interface of the second three-way joint is connected to the second tube body, and the third interface of the second three-way joint is connected to the liquid outlet.

[0015] As a further improvement of the present invention, the heating plate includes a mounting plate, several heating lamp rings and a transparent lamp cover. The mounting plate covers the opening of the mounting seat and forms an accommodating cavity with the mounting seat. Several heating lamp rings are coaxially assembled on the side of the mounting plate away from the accommodating cavity. The transparent lamp cover forms a liquid outlet pipe, and the liquid outlet is formed as an axial hollow part of the liquid outlet pipe. The liquid outlet pipe extends into the accommodating cavity after passing through the mounting plate and is connected to the third interface of the second three-way joint through the first adapter.

[0016] As a further improvement of the present invention, a second liquid circuit is provided in the accommodating cavity, the second liquid circuit has a liquid inlet pipe and a second adapter, the transparent lampshade has two liquid outlet pipes, and the two liquid outlet pipes are respectively connected to the first adapter and the second adapter.

[0017] As a further improvement of the present invention, it also includes: a frame, the driving mechanism, the heating and etching mechanism and the wafer supporting device are all arranged in the frame, the side wall of the frame is provided with a clearance opening for wafer taking and placing, and the opening and closing of the clearance opening is controlled by a lifting door.

[0018] As a further improvement of the present invention, a ventilation opening is formed on the top wall of the frame, and a filter fan is connected to the ventilation opening.

[0019] As a further improvement of the present invention, the driving mechanism further includes a plurality of sets of tensioning control wheels, and the plurality of sets of tensioning control wheels cooperate with the plurality of driven wheels to tension the transmission belt.

[0020] Compared with the prior art, the beneficial effects of the present invention are as follows: through the wafer heating etching equipment composed of a driving mechanism, a heating etching mechanism and a wafer supporting device, wherein the wafer supporting device is used to clamp and position the wafer, after the wafer supporting device completes the wafer clamping and positioning, the driving mechanism controls the heating etching mechanism to approach the wafer surface, and the etching liquid path formed in the heating etching mechanism sprays the etching chemical onto the surface of the wafer, while the heating disk constituting the heating etching mechanism heats the surface of the wafer. Through the above design, the heating etching equipment can simultaneously achieve the purpose of spraying the etching chemical onto the surface of the wafer and heating the surface of the wafer. Compared with the prior art of heating the back of the wafer, the heating efficiency of the wafer surface is higher and the heating effect is better. Furthermore, the relative distance between the heating disk and the wafer can be adjusted by the driving mechanism to achieve the purpose of heating the wafer surface at a more appropriate temperature.

[0021] Secondly, the driving mechanism is composed of a driving motor, a driving wheel and a plurality of driven wheels. The driving motor is started so that the driving end of the driving motor drives the driving wheel to rotate and drives the plurality of driven wheels to rotate synchronously through the transmission belt. The driving mechanism also has a plurality of lifting mechanisms. The driving rod of the lifting mechanism is coaxially fixed with the driven wheel. The lifting seat of the lifting mechanism is engaged with the driving wheel thread and the top end is connected to the mounting seat of the heating etching mechanism. Furthermore, the wafer heating etching equipment also has a cleaning mechanism. When the wafer etching is completed, the lifting mechanism drives the heating etching mechanism to rise and stops the heating plate at the same time. At this time, the swing arm mechanism is driven by the driving device to swing, and the cleaning liquid sprayed from the liquid nozzle covers the surface of the wafer, thereby achieving the purpose of cleaning the surface of the etched wafer.

[0022] Finally, the etching liquid circuit is first composed of a first liquid inlet valve and a phosphoric acid pipeline, and a heating wire is arranged around the phosphoric acid pipeline. After the phosphoric acid is introduced into the accommodating chamber, it flows through the phosphoric acid pipeline and is heated to a suitable temperature and then sprayed onto the wafer surface through the nozzle to ensure the etching reaction effect. The etching liquid circuit also has a cleaning liquid circuit composed of a deionized water pipeline and a second liquid inlet valve. After the etching is completed, deionized water is introduced into the deionized water pipeline to rinse the wafer surface, thereby further achieving the purpose of rinsing the wafer. A second liquid circuit composed of a liquid inlet pipe and a second adapter is also provided in the accommodating chamber. By introducing other chemicals into the second liquid circuit, they can be sprayed on the wafer surface together with the phosphoric acid used for etching to adapt to different etching requirements on the wafer surface. Through the above design, the purpose of spraying at least four reagents other than phosphoric acid and deionized water onto the wafer surface can be achieved to meet various wafer processing requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic diagram of the overall structure of the wafer heating and etching equipment used in the present invention;

[0024] Figure 2This is a schematic diagram of the assembly structure of the driving mechanism, the heating and etching mechanism, and the wafer supporting device in the present invention;

[0025] Figure 3 This is a structural diagram illustrating the coordination relationship between the driving mechanism and the heating and etching mechanism in the present invention;

[0026] Figure 4 Schematic diagram of the cross-section structure of the lifting mechanism and the corresponding driven wheel in the present invention;

[0027] Figure 5 This is a schematic structural diagram of a mounting base for embodying a heating and etching mechanism in the present invention, with the connecting portion omitted and the heating disk facing upward;

[0028] Figure 6 for Figure 5 Schematic diagram of the cross section along FF direction;

[0029] Figure 7 for Figure 6 Enlarged view of part A in the middle;

[0030] Figure 8 Schematic diagram of the etching liquid path structure in the present invention. DETAILED DESCRIPTION

[0031] The present invention is described in detail below with reference to the various embodiments shown in the accompanying drawings, but it should be noted that these embodiments are not limitations of the present invention, and any equivalent transformations or substitutions in functions, methods, or structures made by ordinary technicians in this field based on these embodiments are all within the scope of protection of the present invention.

[0032] Ginseng Figures 1 to 8 The present invention discloses a wafer heating and etching apparatus. Compared to the prior art, the present invention comprises a drive mechanism 1, a heating and etching mechanism 2, and a wafer support device 3. The wafer support device 3 is used to clamp and position a wafer (not shown). After the wafer support device 3 completes the wafer clamping and positioning, the drive mechanism 1 controls the heating and etching mechanism 2 to approach the upper surface of the wafer. The etching liquid path 4 formed in the heating and etching mechanism 2 sprays the etching agent onto the surface of the wafer. At the same time, the heating plate 22 constituting the heating and etching mechanism 2 heats the surface of the wafer. Through the above design, the heating and etching apparatus can simultaneously achieve the purpose of spraying the etching agent on the wafer surface and heating the wafer surface, so that the wafer etching process is carried out at an appropriate temperature. Compared with the prior art method of heating the back side of the wafer, the heating efficiency and heating effect of the wafer surface are higher. Furthermore, the relative distance between the heating plate 22 and the wafer can be adjusted by the drive mechanism 1 to achieve the purpose of heating the wafer surface at a more appropriate temperature.

[0033] Ginseng Figures 1 to 8As shown, in this embodiment, the wafer heating and etching equipment includes a driving mechanism 1, a heating and etching mechanism 2 and a wafer supporting device 3 for clamping a wafer (not shown). The heating and etching mechanism 2 is arranged above the wafer supporting device 3, and the driving mechanism 1 drives the heating and etching mechanism to rise and fall in a direction coaxial with the wafer supporting device 3; the heating and etching mechanism 2 includes a mounting seat 21 and a heating disk 22, the mounting seat 21 has no less than three connecting parts 211, and the driving mechanism 1 is respectively connected to the multiple connecting parts 211. The heating disk 22 is assembled on the side of the mounting seat 21 facing the wafer supporting device 3, and the mounting seat 21 and the heating disk 22 enclose a receiving cavity 212, and the etching liquid path 4 is installed in the receiving cavity 212; the heating disk 22 is arranged parallel to the plane where the wafer is located, and the driving mechanism 1 drives the heating disk 22 to move closer to or away from the wafer. The heating disk 22 has a liquid outlet 225 connected to the etching liquid path 4, and the agent is introduced into the etching liquid path 4 and sprayed onto the surface of the wafer (not shown) through the liquid outlet 225.

[0034] Ginseng Figures 1 to 4 As shown, the driving mechanism 1 includes a driving motor 11, a driving wheel 12 and a plurality of driven wheels 13. The driving end of the driving motor 11 is coaxially arranged with the driving wheel 12. The driving wheel 12 drives the plurality of driven wheels 13 to rotate synchronously through a transmission belt 14. The driving mechanism 1 also includes a lifting mechanism 15 with the same number as the connecting portion 211. The lifting mechanism 15 includes a driving rod 151 and a lifting seat. The bottom end of the driving rod 151 is coaxially fixed with the driven wheel 13. The lifting seat is threadedly engaged with the driving rod 151 and moves along the height direction of the driving rod 151. The top end of the lifting seat is fixed to the connecting portion 211. Further, Figures 2 to 4 As shown, the lifting base includes a lifting column 152, an L-shaped plate 153, a mounting cover 154, a protective cover 155, and a screw member 156. The wafer etching and heating equipment also includes a frame 6. The aforementioned drive mechanism 1 as a whole, the heating and etching mechanism 2, and the wafer support device 3 are all disposed within the frame 6. A clearance opening 61 for wafer placement is defined in the side wall of the frame 6. The opening and closing of the clearance opening 61 are controlled by a lifting door 62. It should be noted that the lifting door 62 is driven to rise or fall to close or open the clearance opening 61 by a lifting cylinder (not labeled) fixed to the side wall of the frame 6. After the wafer is delivered from the clearance opening 61 to the wafer support device 3, the lifting door 62 is raised to maintain the sealed state inside the frame 6. Furthermore, the vent 63 formed on the top of the rack 6 and the filter fan 64 installed at the vent 63 can effectively filter and discharge the polluted gas generated during the wafer etching process inside the rack 6, thereby maintaining the air pressure balance inside the rack 6 while preventing air pollution.

[0035] It should be noted that in this embodiment, the interior of the frame 6 is parallel to the plane where the wafer is located, and is provided with a first plate 65, a second plate 66, and a third plate 67 from top to bottom. Among them, the first plate 65 is arranged close to the bottom wall of the frame 6, and the drive motor 11 is mounted on the upper surface of the first plate 65, and the drive end passes downward through the first plate 65 and is coaxially arranged with the drive wheel 12. The second plate 66 is arranged above the first plate 65 in parallel, and the mounting cover 154 of the aforementioned lifting seat is invertedly mounted on the upper surface of the second plate 66. The bottom end of the drive rod 151 is coaxially mounted with the corresponding driven wheel 13, and then extends upward and passes through the first plate 65 and the second plate 66 in sequence. The L-shaped plate 153 is provided with a plurality of L-shaped plates 153. Figure 4 In the illustrated state, it is assembled within mounting cover 154. Furthermore, a connecting plate 157 is provided within the mounting cover 154, aligned with the side wall. Connecting plate 157 is positioned parallel to the axis of drive rod 151, and its top and bottom ends are rotatably engaged with drive rod 151 via bearings (not labeled). Furthermore, the top end of L-shaped plate 153 extends through the top wall of mounting cover 154. The side of L-shaped plate 153 facing away from connecting plate 157 is affixed to guide rail 1531 along its height. The aforementioned lifting column 152 is positioned parallel to guide rail 1531 and is secured to it by a threaded member 156, which is threadedly engaged with drive rod 151. The aforementioned guide rail 1531 passes through and interlocks with the threaded member 156.

[0036] When it is necessary to adjust the relative position between the heating etching mechanism 2 and the wafer supporting device 3, the driving motor 11 is started to make the several driven wheels 13 rotate synchronously. At this time, the driving rod 151 coaxially arranged with the driven wheel 13 rotates accordingly, and the threaded member 156 threadedly engaged with the driving rod 151 is lifted and lowered along the height direction of the driving rod 151 under the guidance of the guide rail 1531, so as to drive the lifting column 152 fixed to the threaded member 156 to rise and fall together with the threaded member 156. The top of the lifting column 152 is connected to the connecting portion 211 of the mounting seat 21. Specifically, in this embodiment, the mounting seat 21 has a total of three connecting portions 211. Therefore, in this embodiment, the lifting mechanism 15 including the above-mentioned structure is set to a total of three groups consistent with the connecting portion 211. The three lifting columns 152 of the three groups of lifting mechanisms 15 support the heating etching mechanism 2 evenly and stably to make its lifting process more stable.

[0037] Ginseng Figure 2 and Figure 3As shown, the wafer heating etching equipment also includes a cleaning mechanism 5, which has a swing arm mechanism 51. The liquid discharge nozzle 52 of the cleaning mechanism 5 is assembled on the top of the swing arm mechanism 51. The driving device (not shown) drives the swing arm mechanism 51 to swing back and forth so that the cleaning agent sprayed by the liquid discharge nozzle 52 covers the surface of the wafer. The driving mechanism 1 also includes a plurality of sets of tensioning control wheels 16. It should be noted that in the prior art, the wafer etching equipment usually only has an etching function. After the etching is completed, the wafer needs to be transferred to a specific cleaning station by a robot to clean the wafer surface. Since the above steps require an additional wafer transfer action, they will affect the wafer production efficiency to a certain extent. In this embodiment, the driving mechanism 1 is added to achieve the purpose of controlling the relative distance between the heating etching mechanism 2 and the wafer to ensure the wafer heating effect. At the same time, it also has the effect of controlling the heating etching mechanism 2 to rise to a state away from the wafer surface and driving the cleaning mechanism 5 to swing separately to clean the wafer surface. Specifically, refer to Figure 2 As shown, in this embodiment, the drive mechanism 1 has three driven wheels 13, each of which is connected to three sets of lifting mechanisms 15. The forward and reverse rotation of the drive motor 11 controls the forward and reverse rotation of the three driven wheels 13 connected to the lifting mechanisms 15, thereby controlling the elevation of the heated etching mechanism 2. When the three sets of lifting mechanisms 15 synchronously drive the heated etching mechanism 2 to a position away from the wafer surface, a drive device (not shown) is activated to control the reciprocating swing arm mechanism 51, and a liquid discharge nozzle 52 connected to the swing arm mechanism 51 sprays cleaning liquid onto the wafer surface. The specific operation process of the lifting mechanism 15 controlling the elevation of the heated etching mechanism 2 has been described in detail above and will not be repeated here.

[0038] Specifically, in this embodiment, a drive device (not shown) is fixed to the lower surface of the first plate 65 and is optionally configured as a motor. A drive shaft (not labeled) of the swing arm mechanism 51 is connected to the drive end of the drive device and extends upward through the second plate 66 and the third plate 67 to connect to a liquid discharge nozzle 52 having three nozzles arranged side by side. After wafer etching is completed, the drive motor 11 is activated to raise the heated etching mechanism 2 to a position away from the wafer surface, thereby freeing sufficient space above the wafer for the swing arm mechanism 51 to swing. The drive device is then activated, and its drive end is periodically rotated forward and reversed to drive the liquid discharge nozzle 52 at the top of the swing arm mechanism 51 to spray cleaning chemicals onto the wafer surface. This, in conjunction with the rotation of the wafer by the wafer support 3, ensures that the cleaning chemicals are fully distributed across the wafer surface. Compared to the prior art, the overall elevation of the heated etching mechanism 2 by the drive mechanism 1 not only controls the heating effect on the wafer surface, but also provides sufficient swing space for the cleaning mechanism 5 to effectively clean the wafer surface by adjusting the relative distance between the heated etching mechanism 2 and the wafer.

[0039] Furthermore, a protective cover 155 is mounted on the upper surface of the mounting cover 154. The middle section of the protective cover 155 is configured as an accordion cover. The top of the protective cover 155 and the top of the lifting column 152 are simultaneously connected to the connection portion 211 of the mounting base 21 of the heating and etching mechanism 2. Since the heating and etching mechanism 2 has a built-in etching liquid circuit 4, and the cleaning mechanism 5 sprays a cleaning agent onto the wafer surface to clean the wafer surface, the design of the protective cover 155 provides effective protection for the various components of the lifting mechanism 15. The middle section of the protective cover 155 is configured as an accordion cover, which has sufficient elastic deformation space, and the lifting mechanism 15 is used to drive the heating and etching mechanism to move up and down. It should be noted that, in this embodiment, the wafer supporting device 3 is selected as a conventional wafer supporting device with the function of clamping and driving the wafer to rotate, which will not be elaborated here, and a liquid collecting tank (not marked) is arranged around the wafer supporting device 3 to collect etching agents and wafer cleaning agents, and the frame 6 also has a waste liquid tank (not shown) for the agents in the liquid collecting tank to flow into.

[0040] Ginseng Figures 4 to 8 As shown, the etching liquid circuit 4 includes a first liquid inlet valve 41 and a phosphoric acid pipeline 42. The first liquid inlet valve 41 is fixedly connected to the mounting base 21. One end of the phosphoric acid pipeline 42 is connected to the first liquid inlet valve 41, and the other end is connected to the liquid outlet pipe 224 through an interface of the first three-way joint 43. A heating wire 44 is provided around the phosphoric acid pipeline 42; a cleaning liquid circuit 45 is also provided in the accommodating cavity 212. The cleaning liquid circuit 45 includes a second liquid inlet valve 451 and a deionized water pipeline 452. The second liquid inlet valve 451 is fixedly connected to the mounting base 21. One end of the deionized water pipeline 452 is connected to the second liquid inlet valve 451, and the other end is connected to the liquid outlet through another interface of the first three-way joint 43.

[0041] Ginseng Figures 4 to 8 As shown, the heating plate 22 includes a mounting plate 221, a plurality of heating lamp rings 222, and a transparent lampshade 223. The mounting plate 221 covers the opening of the mounting base 21 and forms a receiving chamber 212 with the mounting base 21. The plurality of heating lamp rings 222 are coaxially mounted on the side of the mounting plate 221 away from the receiving chamber 212. The transparent lampshade 223 forms a liquid outlet pipe 224, which has a hollow liquid outlet 225 along the axial direction. The liquid outlet pipe 224 extends into the receiving chamber 212 after passing through the mounting plate 221 and connects to the third interface of the second three-way connector 46 through the first adapter 461. A second liquid path 48 is provided in the receiving chamber 212. The second liquid path 48 has a liquid inlet pipe 481 and a second adapter 482. The transparent lampshade 223 has two liquid outlet pipes 224, which respectively connect to the first adapter 461 and the second adapter 482.

[0042] Phosphoric acid, an etching agent, is provided through the first liquid inlet valve 41. When the phosphoric acid flows through the phosphoric acid pipeline 42 connected to the first liquid inlet valve 41, the heating wire 44 wound around the phosphoric acid pipeline 42 heats the phosphoric acid to an appropriate temperature. Then, the phosphoric acid flows through the first three-way joint 43, the connecting pipeline 462 and the second three-way joint 46, and is sprayed onto the wafer surface through the liquid outlet pipe 224 connected to the first adapter 461, so as to achieve the purpose of heating the wafer and spraying the etching agent at the same time.

[0043] Furthermore, when it is necessary to spray other reagents on the wafer surface, the reagents are not limited to the aforementioned etching reagents, and can be other etching reagents other than phosphoric acid, or other reagents required in the wafer manufacturing process that do not require heating. The liquid supply pipe of such reagents is connected to the second tube body 47. After the reagent passes into the second tube body 47, it passes into the first adapter 461 through the second three-way joint 46, and is also sprayed onto the wafer surface through the liquid outlet pipe 224 connected to the first adapter 461. The design purpose of the second liquid path 48 in this embodiment is consistent with the aforementioned second tube body 47. The reagent that does not require heating flows into the liquid inlet pipe 481 through the liquid supply pipe and then passes through the second adapter 482 and the liquid outlet pipe 224 connected to the second adapter 482 and is sprayed onto the wafer surface. Unlike the second tube body 47, the reagent flowing into the liquid inlet pipe 481 can be sprayed onto the wafer surface together with the phosphoric acid flowing into the phosphoric acid line 42 through two liquid outlet pipes 224.

[0044] Finally, after the etching agent is sprayed, deionized water is introduced through the liquid supply (not marked) connected to the second liquid inlet valve 451. The deionized water flows through the deionized water pipeline 452, the first three-way joint 43, the connecting pipeline 462 and the second three-way joint 46, and is then sprayed onto the wafer surface through the liquid outlet pipe 224 connected to the first adapter 461, thereby achieving the purpose of rinsing the wafer surface. Through the design of the above-mentioned etching liquid path 4 as a whole and the second liquid path 48, the purpose of spraying phosphoric acid, deionized water and at least two other types of chemicals onto the wafer surface can be met. In addition to protecting the heating lamp ring 222, the transparent lamp cover 223 also has the effect of connecting the two integrally formed liquid outlet pipes 224 with the etching liquid path 4 and the second liquid path 48 to spray the chemicals, thereby achieving the purpose of separating the fluid liquid path in the heating equipment from the heating lamp ring 222 and the circuit, having a sealing and isolation effect while being beneficial to the flow of chemicals, taking into account the effects of spraying the etching chemicals and uniformly heating the wafer surface and effectively avoiding the occurrence of short circuits, thereby improving the safety and service life of the wafer heating and etching equipment while further improving the overall integration of the etching and heating equipment.

[0045] The series of detailed descriptions listed above are only specific descriptions of feasible implementation methods of the present invention. They are not intended to limit the scope of protection of the present invention. Any equivalent implementation methods or changes that do not deviate from the technical spirit of the present invention should be included in the scope of protection of the present invention.

[0046] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the invention is defined by the appended claims, not the foregoing description, and all variations within the meaning and range of equivalents of the claims are intended to be included therein. Any reference sign in a claim should not be construed as limiting the claim to which it relates.

[0047] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

Claims

1. A wafer heating and etching device, characterized in that: include: A driving mechanism, a heating and etching mechanism, and a wafer supporting device for clamping a wafer, wherein the heating and etching mechanism is arranged above the wafer supporting device, and the driving mechanism drives the heating and etching mechanism to rise and fall in a direction coaxial with the wafer supporting device; The heating etching mechanism includes a mounting seat and a heating plate, the mounting seat having no less than three connecting parts, the driving mechanism being connected to the plurality of connecting parts respectively, the heating plate being mounted on a side of the mounting seat facing the wafer supporting device, and the mounting seat and the heating plate enclose a receiving cavity, in which an etching liquid path is installed; The heating plate is arranged parallel to the plane where the wafer is located, and the driving mechanism drives the heating plate to move closer to or farther from the wafer. The heating plate has a liquid outlet connected to the etching liquid path, and the agent is introduced into the etching liquid path and sprayed onto the wafer surface through the liquid outlet; The etching liquid circuit includes a first liquid inlet valve and a phosphoric acid pipeline. The first liquid inlet valve is fixedly connected to the mounting base. One end of the phosphoric acid pipeline is connected to the first liquid inlet valve, and the other end is connected to the liquid outlet through an interface of a first three-way connector. A heating wire is provided around the phosphoric acid pipeline. A cleaning liquid circuit is also provided in the accommodating chamber, and the cleaning liquid circuit includes a second liquid inlet valve and a deionized water pipeline. The second liquid inlet valve is fixedly connected to the mounting seat. One end of the deionized water pipeline is connected to the second liquid inlet valve, and the other end is connected to the liquid outlet through the other interface of the first three-way connector. The etching liquid circuit further comprises a connecting pipe and a second three-way joint, one end of the connecting pipe is connected to the third interface of the first three-way joint, the other end of the connecting pipe is connected to one interface of the second three-way joint, the second interface of the second three-way joint is connected to the second tube body, and the third interface of the second three-way joint is connected to the liquid outlet; The heating plate includes a mounting plate and a transparent lampshade. The mounting plate covers the opening of the mounting base and forms a receiving cavity with the mounting base. The transparent lampshade forms a liquid outlet nozzle. The liquid outlet is formed as an axial hollow portion of the liquid outlet nozzle. The liquid outlet nozzle extends into the receiving cavity after passing through the mounting plate and connects to the third interface of the second three-way joint through the first adapter. A second liquid circuit is provided in the accommodating cavity. The second liquid circuit has a liquid inlet pipe and a second adapter. The transparent lampshade has two liquid outlet nozzles, which are respectively connected to the first adapter and the second adapter.

2. The wafer heating and etching equipment according to claim 1, characterized in that: The driving mechanism includes a driving motor, a driving wheel and a plurality of driven wheels. The driving end of the driving motor is coaxially arranged with the driving wheel. The driving wheel drives the plurality of driven wheels to rotate synchronously through a transmission belt. The driving mechanism also includes a lifting mechanism with the same number as the connecting parts, and the lifting mechanism includes a driving rod and a lifting seat. The bottom end of the driving rod is coaxially fixed with the driven wheel, the lifting seat is threadedly engaged with the driving rod and displaced along the height direction of the driving rod, and the top end of the lifting seat is fixed to the connecting part.

3. The wafer heating and etching equipment according to claim 2, characterized in that: Also includes: The cleaning mechanism comprises a swing arm mechanism, wherein the liquid discharge nozzle of the cleaning mechanism is assembled at the top of the swing arm mechanism, and the liquid discharge nozzle has no less than two nozzles. The swing arm mechanism is driven to swing back and forth by a driving device so that the cleaning agent sprayed by the liquid discharge nozzle covers the surface of the wafer.

4. The wafer heating and etching equipment according to claim 1, characterized in that: The heating plate includes a plurality of heating lamp rings, which are coaxially assembled on a side of the mounting plate away from the accommodating cavity.

5. The wafer heating and etching equipment according to claim 2, characterized in that: Also includes: The frame, the driving mechanism, the heating and etching mechanism and the wafer supporting device are all arranged in the frame, and the side wall of the frame is provided with a clearance opening for wafer taking and placing, and the opening and closing of the clearance opening is controlled by a lifting door.

6. The wafer heating and etching equipment according to claim 5, characterized in that: A vent is formed on the top wall of the frame, and a filter fan is connected to the vent.

7. The wafer heating and etching equipment according to claim 6, characterized in that: The driving mechanism further includes a plurality of sets of tensioning control wheels, and the plurality of sets of tensioning control wheels cooperate with the plurality of driven wheels to tension the transmission belt.

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