Power generation device for irradiating photovoltaic silicon wafer with specific lamplight
By using specific light in photovoltaic power generation devices to illuminate photovoltaic silicon wafers, combined with the design of light-guiding film and light-transmitting plates, the problem that existing photovoltaic power generation devices are limited by sunlight and weather conditions is solved, and efficient power generation is achieved under any time and condition.
Patent Information
- Application Number
- CN202411300692.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-18
- Publication Date
- 2025-06-10
AI Technical Summary
The existing photovoltaic power generation devices are limited by direct sunlight and weather conditions. The power generation efficiency will decrease on cloudy days or nights, and there is no effective technological breakthrough yet.
Design a power generation device to irradiate a photovoltaic silicon wafer through specific lights (such as ultraviolet lamps, infrared lamps, incandescent lamps), and uniformly introduce light energy using a light guide film and light transmitting plate, generate electron-hole pairs and use a built-in electric field to separate them to realize the conversion of light energy to electrical energy.
The device can generate electricity at any time and weather conditions, without being restricted by direct sunlight, and through the double-layer photovoltaic silicon wafer design, it can generate double current voltage, improving power generation efficiency and flexibility.
Smart Images

Figure CN120129309A_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the technical field of power generation, and in particular relates to a power generation device that irradiates a photovoltaic silicon wafer with specific light. Background Art
[0002] The future development of energy should follow the path of sustainable development. The society's demand for renewable energy is increasing continuously. As a clean energy technology, photovoltaic power generation has gradually attracted wide attention.
[0003] Current photovoltaic power generation devices mostly use solar photovoltaic power generation. However, this power generation method requires direct sunlight, and photovoltaic power generation is affected by weather conditions. For example, on cloudy days or at night, with insufficient light, the power generation efficiency will decrease.
[0004] Regarding the technology of generating electricity through light energy, so far, there has been no technology that can solve this technical problem. Summary of the Invention
[0005] The technical problem to be solved by the present invention is: to solve the deficiency that the existing power generation method depends on the presence of sunlight, and thus provide a power generation device that irradiates a photovoltaic silicon wafer with specific light.
[0006] The technical solution adopted by the present invention to solve its technical problems is:
[0007] A power generation device that irradiates a photovoltaic silicon wafer with specific light, including a first conductive strip, a first photovoltaic silicon wafer, a first light guide film, a first light-transmitting plate, a second light guide film, a second photovoltaic silicon wafer, and a second conductive strip arranged in sequence. The outer side of the first light-transmitting plate is provided with a light source that can cooperate to generate the photovoltaic effect. It can be that light sources one are provided on all four sides, or one side / two sides / three sides have light sources one.
[0008] Further, the first light guide film and the second light guide film are respectively deposited on the outer surfaces of the first photovoltaic silicon wafer and the second photovoltaic silicon wafer by physical vapor deposition technology.
[0009] Further, the light source one is one or a combination of ultraviolet lamps, infrared lamps, and incandescent lamps.
[0010] Further, the specific light irradiates the photovoltaic silicon wafer through a light guide plate and a light guide film, causing the silicon wafer to generate electron-hole pairs. Using the built-in electric field, the electrons and holes are separated to generate current and a potential difference, realizing the conversion of light energy into electrical energy.
[0011] Further, both the first conductive strip and the second conductive strip are composed of a plurality of conductive strips, and one of the plurality of conductive strips is used to connect the other conductive strips for conduction.
[0012] The beneficial effects of the present invention are:
[0013] 1. The product of the present invention supplies light source through ultraviolet lamp or infrared lamp or incandescent lamp, replacing direct sunlight, not restricted by weather, enabling the photovoltaic silicon wafer to generate electricity, and finally forming current and voltage after connecting the conducting bar to the wire.
[0014] 2. Moreover, it is set to generate electricity with double - layer photovoltaic silicon wafers, and the same light source can generate double current and voltage, with high - efficiency power generation.
[0015] 3. The structure of the product of the present invention is exquisitely designed. Since the structure is not restricted by direct sunlight, the position is not restricted, and its size can also be adjusted arbitrarily. It can be placed in some relatively casual spaces, saving resources. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The technical solutions of the present application will be further described below in conjunction with the drawings and embodiments.
[0017] Figure 1 is a three - dimensional structural schematic diagram of Embodiment 1 of the present application;
[0018] Figure 2 is a front - view structural schematic diagram of Embodiment 1 of the present application;
[0019] Figure 3 is of Embodiment 1 of the present application Figure 2 A - A sectional structural schematic diagram;
[0020] The reference numerals in the drawings are:
[0021] 100, the first conducting bar; 200, the first photovoltaic silicon wafer; 300, the first light - guiding film; 400, the first light - transmissive plate; 500, the second light - guiding film; 600, the second photovoltaic silicon wafer; 700, the second conducting bar; 800, the first light source. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0022] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.
[0023] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the protection scope of the present application. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "a plurality" is two or more.
[0024] In the description of the present application, it should be noted that unless otherwise clearly specified and limited, the terms "installed", "connected", "connected" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood through specific circumstances.
[0025] The technical solution of the present application will be described in detail below with reference to the drawings and in conjunction with embodiments. Embodiment
[0026] Embodiment 1
[0027] Combined with Figures 1-3 , this embodiment provides a power generation device that irradiates a photovoltaic silicon wafer with specific light, including a first conductive strip 100, a first photovoltaic silicon wafer 200, a first light guide film 300, a first light transmissive plate 400, a second light guide film 500, a second photovoltaic silicon wafer 600, and a second conductive strip 700 arranged in sequence. Light sources 800 capable of cooperating to generate the photovoltaic effect are provided around the first light transmissive plate 400.
[0028] The first light transmissive plate 400 can be glass, which is used to guide the light of the light source 800. The light sources 800 are arranged around it, so that the first light transmissive plate 400 guides the light evenly and transmits the light evenly to the first photovoltaic silicon wafer 200 and the second photovoltaic silicon wafer 600 on both sides. Of course, the light sources 800 can also be arranged on only one side, or two sides, or three sides; both the first light guide film 300 and the second light guide film 500 are respectively deposited on the outer surfaces of the first photovoltaic silicon wafer 200 and the second photovoltaic silicon wafer 600 by physical vapor deposition technology. Of course, other connection processes that do not affect light guiding can also be selected.
[0029] The light source 800 is one or a combination of an ultraviolet lamp, an infrared lamp, and an incandescent lamp. Both the first conductive strip 100 and the second conductive strip 700 are composed of a plurality of conductive strips, and one of them is used to connect the other conductive strips. The conductive strips are evenly arranged on the outer surfaces of the first photovoltaic silicon wafer 200 and the second photovoltaic silicon wafer 600.
[0030] The first photovoltaic silicon wafer 200 and the second photovoltaic silicon wafer 600 can be made of main materials such as silicon + boron, or can also be silicon + phosphorus, silicon + boron + tellurium, or silicon + phosphorus + tellurium.
[0031] When the present invention is specifically used:
[0032] The ultraviolet lamp, infrared lamp, or incandescent lamp located outside the light-transmitting plate supplies the light source. The photovoltaic silicon wafer absorbs light energy through the light-transmitting plate, causing electron-hole pairs to be generated in the silicon wafer. Using the built-in electric field to generate a potential difference, current is thus generated, and the current is conducted out through the conductive strip connecting the wire.
[0033] Enlightened by the above ideal embodiments according to the present application, through the above description, relevant staff can completely make various changes and modifications without departing from the technical idea of this application. The technical scope of this application is not limited to the content in the specification, and its technical scope must be determined according to the scope of the claims.
Claims
1. A power generation device that uses a specific light to illuminate a photovoltaic silicon wafer, characterized in that: It comprises a first conductive strip, a first photovoltaic silicon wafer, a first light-guiding film, a light-transmitting plate, a second light-guiding film, a second photovoltaic silicon wafer and a second conductive strip arranged in sequence. A light source capable of cooperating to produce a photovoltaic effect is arranged on a circumferential outer side of the light-transmitting plate.
2. The power generation device according to claim 1, wherein the power generation device is characterized in that: The first light guide film and the second light guide film are respectively deposited on the outer surfaces of the first photovoltaic silicon wafer and the second photovoltaic silicon wafer by using physical vapor deposition technology.
3. The power generation device according to claim 2, wherein the power generation device is characterized in that: The light source 1 is one or a combination of ultraviolet lamp, infrared lamp and incandescent lamp.
4. The power generation device according to claim 3, wherein: The first conductive strip and the second conductive strip are both composed of a plurality of conductive strips, and one of the conductive strips is used to connect other conductive strips.