Light emitting diode and preparation method thereof

Abstract

The invention provides a light emitting diode and a preparation method thereof. The light-emitting diode comprises an epitaxial structure and a transparent conductive layer, the transparent conductive layer is arranged on the surface of the epitaxial structure, the transparent conductive layer comprises a first transparent conductive sub-layer, a second transparent conductive sub-layer and a third transparent conductive sub-layer which are sequentially stacked on the epitaxial structure, the first transparent conductive sub-layer is an ITO layer, the second transparent conductive sub-layer is a hydrogen and fluorine doped indium oxide layer, and the third transparent conductive sub-layer is an ITO layer. According to the double-ITO transparent conductive layer, the production cost is reduced, and good light transmission and conductivity are provided.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting devices, and particularly to a light-emitting diode and a method for manufacturing the same. Background Art

[0002] A light-emitting diode (LED) is a semiconductor device that can emit light, and has advantages such as energy saving, high brightness, high durability, long life, and light weight, and has been widely used in fields such as lighting and display.

[0003] Related technologies provide a light-emitting diode, and the structure of the light-emitting diode includes an epitaxial structure and a transparent conductive layer, wherein the transparent conductive layer is disposed on the surface of the epitaxial structure.

[0004] The transparent conductive layer is usually a transparent conductive oxide (TCO) film layer, such as an indium tin oxide (ITO) thin film. However, the currently prepared ITO has problems of high cost, and the need to improve both light transmittance and conductivity. Summary of the Invention

[0005] Embodiments of the present disclosure provide a light-emitting diode and a method for manufacturing the same, which can improve the light extraction efficiency of the light-emitting diode and improve the anti-EOS ability. The technical solutions are as follows:

[0006] On the one hand, a light-emitting diode is provided, and the light-emitting diode includes:

[0007] an epitaxial structure and a transparent conductive layer;

[0008] The transparent conductive layer is on the surface of the epitaxial structure, and the transparent conductive layer includes a first transparent electron-conducting layer, a second transparent electron-conducting layer, and a third transparent electron-conducting layer that are sequentially stacked on the epitaxial structure. The first transparent electron-conducting layer is an ITO layer, the second transparent electron-conducting layer is an indium oxide layer doped with hydrogen and fluorine, and the third transparent electron-conducting layer is an ITO layer.

[0009] Optionally, the thickness of the first transparent electron-conducting layer is 5 to 10 nm, the thickness of the second transparent electron-conducting layer is 20 to 40 nm, and the thickness of the third transparent electron-conducting layer is 20 to 70 nm.

[0010] Optionally, the first transparent electron-conducting layer, the second transparent electron-conducting layer, and the third transparent electron-conducting layer are all sputtered layers, and the sputtering power of the first transparent electron-conducting layer is less than the sputtering powers of the second transparent electron-conducting layer and the third transparent electron-conducting layer.

[0011] Optionally, In in the second transparent electron-conducting layer2 O 3 The mass ratio of O to F is from 97:3 to 99:1.

[0012] Optionally, the mass fraction of In in the first transparent conductive electron layer and the third transparent conductive electron layer is 85-95%, and the mass fraction of SnO in the first transparent conductive electron layer and the third transparent conductive electron layer is 5-15%. 2 O 3 The mass fraction of In in the first transparent conductive electron layer and the third transparent conductive electron layer is 85-95%, and the mass fraction of SnO in the first transparent conductive electron layer and the third transparent conductive electron layer is 5-15%. 2 The mass fraction of SnO is 5-15%.

[0013] Optionally, the first transparent conductive electron layer is an annealed layer, and the second transparent conductive electron layer and the third transparent conductive electron layer are non-annealed layers.

[0014] On the other hand, a method for manufacturing a light-emitting diode, the method comprising:

[0015] Fabricating an epitaxial structure;

[0016] Fabricating a transparent conductive layer on the surface of the epitaxial structure, the transparent conductive layer comprising a first transparent conductive electron layer, a second transparent conductive electron layer, and a third transparent conductive electron layer sequentially stacked on the epitaxial structure, the first transparent conductive electron layer being an ITO layer, the second transparent conductive electron layer being an indium oxide layer doped with hydrogen and fluorine, and the third transparent conductive electron layer being an ITO layer.

[0017] Optionally, fabricating the first transparent conductive electron layer includes:

[0018] Under the condition that the oxygen flow rate is 1-3 mL / min, an ITO layer with a thickness of 5-10 nm is fabricated by using a magnetron sputtering process;

[0019] Annealing the ITO layer to obtain the first transparent conductive electron layer.

[0020] Optionally, fabricating the second transparent conductive electron layer includes:

[0021] Under the conditions that the water vapor flow rate is 4 sccm - 10 sccm, the temperature is 100 - 150 °C, the Ar flow rate is 50 sccm - 60 sccm, the air pressure is 0.3 - 0.8 Pa, and the sputtering power density is 1 - 3 W / cm -2 An indium oxide layer doped with hydrogen and fluorine with a thickness of 20 - 40 nm is fabricated by using a magnetron sputtering process to obtain the second transparent conductive electron layer.

[0022] Optionally, fabricating the third transparent conductive electron layer includes:

[0023] Under the conditions that the power frequency is 12 - 15 MHz and the atmosphere is O 2Under the conditions of a mixed gas of [gas name] and Ar, a gas flow rate of 5 to 15 sccm, a gas pressure of 0.2 to 0.8 Pa, and a sputtering power of 400 to 600 W, a 20- to 70-nm ITO layer is fabricated by using a magnetron sputtering process to obtain the third transparent conductive electron layer.

[0024] The beneficial effects brought by the technical solutions provided by the embodiments of the present disclosure are as follows:

[0025] In the embodiments of the present disclosure, the transparent conductive layer includes a first transparent conductive electron layer, a second transparent conductive electron layer, and a third transparent conductive electron layer. The first transparent conductive electron layer is an ITO layer. The first transparent conductive electron layer formed by ITO contacts the epitaxial structure, improving the current spreading ability. The second transparent conductive electron layer is an indium oxide layer doped with hydrogen and fluorine. The second transparent conductive electron layer formed by indium oxide doped with hydrogen and fluorine can increase the ability of the transparent conductive layer to transport carriers, improve the light transmittance, increase the conductivity, reduce the defect states at the interface, and inhibit the recombination of carriers; moreover, indium oxide doped with hydrogen and fluorine is cheaper than ITO in terms of cost, saving the manufacturing cost. The third transparent conductive electron layer is an ITO layer, which is beneficial to the light emission. The transparent conductive layer with the above three-layer structure reduces the cost and improves the light transmittance and conductivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0027] Figure 1 is a schematic structural diagram of a light-emitting diode provided by an embodiment of the present disclosure;

[0028] Figure 2 is a schematic structural diagram of another light-emitting diode provided by an embodiment of the present disclosure;

[0029] Figure 3 is a flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure;

[0030] Figure 4 is a flowchart of another method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure;

[0031] Figure 5 is a schematic structural diagram during the manufacturing process of a light-emitting diode provided by an embodiment of the present disclosure;

[0032] Figure 6 is a schematic structural diagram during the manufacturing process of a light-emitting diode provided by an embodiment of the present disclosure;

[0033] Figure 7 It is a schematic structural diagram in the manufacturing process of a light-emitting diode provided by an embodiment of the present disclosure;

[0034] Figure 8 It is a schematic structural diagram in the manufacturing process of a light-emitting diode provided by an embodiment of the present disclosure.

[0035] The reference numerals are as follows:

[0036] 100: epitaxial structure; 200: transparent conductive layer; 300: current blocking layer; 400: electrode structure; 500: passivation layer; 600: substrate;

[0037] 101: first semiconductor layer; 102: active layer; 103: second semiconductor layer; 401: first electrode; 402: second electrode;

[0038] 201: first transparent conductive electron layer; 202: second transparent conductive electron layer; 203: third transparent conductive electron layer;

[0039] 401: first electrode; 402: second electrode;

[0040] 1001: step structure. Detailed implementation manners

[0041] To make the objectives, technical solutions, and advantages of the present disclosure clearer, the following will further describe the embodiments of the present disclosure in detail with reference to the accompanying drawings.

[0042] Figure 1 It is a schematic structural diagram of a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 1 , the light-emitting diode includes: an epitaxial structure 100 and a transparent conductive layer 200.

[0043] Among them, the transparent conductive layer 200 is on the surface of the epitaxial structure 100. The transparent conductive layer 200 includes a first transparent conductive electron layer 201, a second transparent conductive electron layer 202, and a third transparent conductive electron layer 203 that are sequentially stacked on the epitaxial structure 100. The first transparent conductive electron layer 201 is an ITO layer, the second transparent conductive electron layer 202 is an indium oxide layer doped with hydrogen and fluorine, and the third transparent conductive electron layer 203 is an ITO layer.

[0044] In the embodiments of the present disclosure, the transparent conductive layer includes a first transparent conductive electron layer, a second transparent conductive electron layer, and a third transparent conductive electron layer. The first transparent conductive electron layer is an ITO layer. The first transparent conductive electron layer formed by ITO contacts the epitaxial structure, improving the current spreading ability. The second transparent conductive electron layer is an indium oxide layer doped with hydrogen and fluorine. The second transparent conductive electron layer formed by indium oxide doped with hydrogen and fluorine can increase the ability of the transparent conductive layer to transport carriers, improve the light transmittance, increase the conductivity, reduce the defect states at the interface, and inhibit the recombination of carriers; moreover, indium oxide doped with hydrogen and fluorine is cheaper than ITO in terms of cost, saving the manufacturing cost. The third transparent conductive electron layer is an ITO layer, which is beneficial to the light emission. The transparent conductive layer with the above three-layer structure reduces the cost and improves the light transmittance and conductivity.

[0045] In the embodiments of the present disclosure, the thickness of the first transparent conductive electron layer 201 can be 5 - 10 nm. The first transparent conductive electron layer with this thickness can ensure the current spreading ability, and on the other hand, it will not cause the overall size of the chip to be large due to being too thick.

[0046] Exemplarily, the thickness of the first transparent conductive electron layer 201 is 8 nm.

[0047] In the embodiments of the present disclosure, the thickness of the second transparent conductive electron layer 202 can be 20 - 40 nm. If the thickness is too thin, it is not conducive to improving the carrier transport ability; if it is too thick, it is not conducive to increasing the light transmittance. Adopting the above thickness can better balance between improving the carrier transport ability and increasing the light transmittance.

[0048] Exemplarily, the thickness of the second transparent conductive electron layer 202 is 30 nm.

[0049] In the embodiments of the present disclosure, the thickness of the third transparent conductive electron layer 203 can be 20 - 70 nm. With this thickness, the third transparent conductive electron layer can ensure the anti-EOS ability, and on the other hand, it will not cause the manufacturing cost of the light-emitting diode to increase due to being too thick.

[0050] Exemplarily, the thickness of the third transparent conductive electron layer 203 is 40 nm.

[0051] In the embodiments of the present disclosure, In 2 O 3 in the first transparent conductive electron layer 201 and the third transparent conductive electron layer 203 can have a mass fraction of 85 - 95%, and SnO 2 in the first transparent conductive electron layer 201 and the third transparent conductive electron layer 203 can have a mass fraction of 5 - 15%. This mass fraction distribution is beneficial to improving the light transmittance and conductivity of the transparent conductive layer and enhancing the current spreading ability.

[0052] Exemplarily, In2 O 3 The mass fraction of can be 90%, and the mass fraction of SnO in the first transparent conductive electron layer 201 and the third transparent conductive electron layer 203 can be 10%. 2

[0053] In the embodiments of the present disclosure, the first transparent conductive electron layer 201 is an annealed layer, and the second transparent conductive electron layer 202 and the third transparent conductive electron layer 203 are non-annealed layers. The first transparent conductive electron layer is an annealed layer. Annealing can repair the lattice damage introduced during sputtering and reduce interface defects, prevent damage to the underlying GaN layer caused by sputtering, and provide a basis for subsequent film layer sputtering.

[0054] In the embodiments of the present disclosure, the mass ratio of In 2 O 3 to F in the second transparent conductive electron layer 202 is 97:3 to 99:1. This mass ratio is beneficial to increasing the ability of the transparent conductive layer to transport carriers and improving the light transmittance.

[0055] Exemplarily, the mass ratio of In 2 O 3 to F in the second transparent conductive electron layer 202 is 99:1.

[0056] Among them, the content of hydrogen in the second transparent conductive electron layer is related to the target, and it is not limited in the embodiments of the present disclosure.

[0057] Figure 2 is a schematic structural diagram of another light-emitting diode provided by the embodiments of the present disclosure. Refer to Figure 2 , the epitaxial structure 100 has a stepped structure 1001, and the stepped structure 1001 includes a stepped top surface and a stepped bottom surface.

[0058] This light-emitting diode further includes a current blocking layer 300, an electrode structure 400, and a passivation layer 500. The current blocking layer 300 is located on the stepped top surface, the transparent conductive layer 200 covers the current blocking layer 300, and the passivation layer 500 covers the transparent conductive layer 200, the stepped bottom surface, and the stepped top surface. The electrode structure 400 is electrically connected to the transparent conductive layer 200 and the stepped bottom surface.

[0059] In the embodiments of the present disclosure, the epitaxial structure 100 includes a stacked first semiconductor layer 101, an active layer 102, and a second semiconductor layer 103. The stepped top surface is located on the second semiconductor layer 103, and the stepped bottom surface is located on the first semiconductor layer 101.

[0060] In the embodiments of the present disclosure, the electrode structure 400 includes a first electrode 401 and a second electrode 402. The first electrode 401 is connected to the transparent conductive layer 200, and the second electrode 402 is connected to the stepped bottom surface.

[0061] In​Figure 2 In the structure shown, the electrode structure 400 does not protrude from the passivation layer 500, and the passivation layer 500 is provided with a through hole corresponding to the electrode structure 400. In other embodiments, the electrode structure 400 may also protrude from the passivation layer 500.

[0062] Optionally, the light-emitting diode further includes a substrate 600, and the epitaxial structure 100 is located on the substrate 600.

[0063] In the embodiments of the present disclosure, the substrate 600 may be any one of substrates such as a sapphire substrate, an Si substrate, and an SiC substrate, and the embodiments of the present disclosure do not limit the material of the substrate 600.

[0064] Exemplarily, the substrate 600 is a sapphire substrate.

[0065] In the embodiments of the present disclosure, the first semiconductor layer 101 may be an N-type semiconductor layer, and the second semiconductor layer 103 may be a P-type semiconductor layer.

[0066] For example, the first semiconductor layer 101 may be an N-type GaN layer, and the second semiconductor layer 103 may be a P-type GaN layer.

[0067] In other embodiments, the first semiconductor layer 101 may be a P-type semiconductor layer, and the second semiconductor layer 103 may be an N-type semiconductor layer.

[0068] In the embodiments of the present disclosure, the active layer 102 may be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well structure.

[0069] In the embodiments of the present disclosure, the current blocking layer 300 may be AlGaN or SiO 2 layer.

[0070] Exemplarily, the current blocking layer 300 is an AlGaN current blocking layer.

[0071] In the embodiments of the present disclosure, the first electrode 401 and the second electrode 402 may be one or a combination of metals or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt, and Au.

[0072] Exemplarily, the first electrode 401 and the second electrode 402 are a stack of Cr, Al, AlCu, Ti, Ni, Pt, and Au.

[0073] When the first electrode and the second electrode adopt metals such as Al, the passivation layer can prevent the electrode structure from forming an alloy at high temperature, resulting in chip reliability failure, and greatly improving the stability of the internal structure of the LED device in a high-humidity environment.

[0074] In the embodiments of the present disclosure, the passivation layer 500 may be SiO2 , Si 3 N 4 , SiN x or a passivation layer made of SiON.

[0075] Exemplarily, the passivation layer 500 is a passivation layer made of SiO2.

[0076] It should be noted that in the embodiments of the present disclosure, the structure can be selectively increased or decreased on the basis of the above-mentioned light-emitting diode structure, and the present disclosure does not limit this.

[0077] Figure 3 is a flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 3 , the method steps include:

[0078] S11. Fabricate an epitaxial structure.

[0079] S12. Fabricate a transparent conductive layer on the surface of the epitaxial structure. The transparent conductive layer includes a first transparent conductive electron layer, a second transparent conductive electron layer, and a third transparent conductive electron layer that are sequentially stacked on the epitaxial structure. The first transparent conductive electron layer is an ITO layer, the second transparent conductive electron layer is an indium oxide layer doped with hydrogen and fluorine, and the third transparent conductive electron layer is an ITO layer.

[0080] In the embodiments of the present disclosure, the transparent conductive layer includes a first transparent conductive electron layer, a second transparent conductive electron layer, and a third transparent conductive electron layer. The first transparent conductive electron layer is an ITO layer. The first transparent conductive electron layer formed by ITO contacts the epitaxial structure to improve the current spreading ability. The second transparent conductive electron layer is an indium oxide layer doped with hydrogen and fluorine. The second transparent conductive electron layer formed by indium oxide doped with hydrogen and fluorine can increase the ability of the transparent conductive layer to transport carriers, improve the light transmittance, increase the conductivity, reduce the defect states at the interface, and inhibit the recombination of carriers; and indium oxide doped with hydrogen and fluorine is cheaper than ITO in terms of cost, saving the manufacturing cost. The third transparent conductive electron layer is an ITO layer, which is beneficial to the light emission. The transparent conductive layer with the above three-layer structure reduces the cost and improves the light transmittance and conductivity.

[0081] Figure 4 is another flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 4 , the method steps include:

[0082] S21. Sequentially form a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate. The second semiconductor layer, the active layer, and the first semiconductor layer constitute an epitaxial structure.

[0083] Among them, the substrate can be any one of substrates such as a sapphire substrate, a Si substrate, and a SiC substrate.

[0084] Exemplarily, the substrate is a sapphire substrate.

[0085] In one example, step S21 includes:

[0086] First step, fabricate a first semiconductor layer.

[0087] In the embodiment of the present disclosure, the first semiconductor layer is an N-type GaN layer.

[0088] Second step, fabricate an active layer.

[0089] In the embodiment of the present disclosure, the active layer is a multi-quantum well layer, such as an InGaN / GaN multi-quantum well structure.

[0090] Third step, fabricate a second semiconductor layer.

[0091] In the embodiment of the present disclosure, the second semiconductor layer is a P-type GaN layer.

[0092] In the embodiment of the present disclosure, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on the substrate.

[0093] In the embodiment of the present disclosure, the growth of the above semiconductor layers can be realized by using Veeco K465i or C4 or RB MOCVD (Metal Organic Chemical Vapor Deposition) equipment or AIXTRON metal organic chemical vapor deposition equipment. High-purity H 2 (hydrogen) or high-purity N 2 (nitrogen) or a mixed gas of high-purity H 2 and high-purity N 2 is used as the carrier gas, high-purity NH 3 is used as the N source, trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the gallium sources, trimethylindium (TMIn) is used as the indium source, silane (SiH 4 ) is used as the N-type dopant, trimethylaluminum (TMAl) is used as the aluminum source, and bis(cyclopentadienyl)magnesium (CP 2 Mg) is used as the P-type dopant.

[0094] S22. Pattern the epitaxial structure to form a stepped structure, and the stepped structure includes a stepped top surface and a stepped bottom surface.

[0095] Figure 5 is a schematic structural diagram in the manufacturing process of a light-emitting diode provided by the embodiment of the present disclosure. Refer to Figure 5The epitaxial structure 100 includes a first semiconductor layer 101, an active layer 102, and a second semiconductor layer 103. The first semiconductor layer 101, the active layer 102, and the second semiconductor layer 103 are sequentially grown on a substrate 600. The epitaxial structure 100 is provided with a step structure 1001, which includes a step top surface and a step bottom surface. The step bottom surface is located in the first semiconductor layer, and the step top surface is located in the second semiconductor layer.

[0096] Exemplarily, the step S22 may include:

[0097] Form a patterned mask layer on the surface of the second semiconductor layer; under the shielding of the mask layer, etch the epitaxial structure to form a step extending to the first semiconductor layer.

[0098] S23. Fabricate a current blocking layer on the surface of the epitaxial structure.

[0099] Figure 6 It is a schematic structural diagram in the manufacturing process of a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 6 The current blocking layer 300 is located on the second semiconductor layer 103.

[0100] In the embodiment of the present disclosure, the current blocking layer may be AlGaN or SiO 2 layer.

[0101] Exemplarily, the current blocking layer is an AlGaN current blocking layer.

[0102] Exemplarily, the step S23 may include:

[0103] The first step is to deposit a current blocking layer.

[0104] Use a plasma enhanced chemical vapor deposition (PECVD) device to deposit a current blocking thin film on the surface of the second semiconductor layer of the epitaxial structure.

[0105] The second step is to pattern the current blocking thin film to obtain a current blocking layer.

[0106] In the embodiment of the present disclosure, a mask is formed by photolithography, and then the two sides of the current blocking thin film are etched by wet etching to expose the second semiconductor layer, obtaining a current blocking layer.

[0107] S24. Fabricate a transparent conductive layer on the surface of the epitaxial structure, and the transparent conductive layer covers the current blocking layer.

[0108] Figure 7 It is a schematic structural diagram in the manufacturing process of a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 7. The transparent conductive layer 200 is located on the second semiconductor layer 103 and covers the current blocking layer 300.

[0109] Exemplarily, the step S24 may include:

[0110] First step, fabricate the first transparent conductive sub-layer.

[0111] In an embodiment of the present disclosure, under the condition that the oxygen flow rate is 1 - 3 mL / min, an ITO layer with a thickness of 5 - 10 nm is fabricated by using a magnetron sputtering process.

[0112] Exemplarily, under the condition that the oxygen flow rate is 2 mL / min, an 8 - nm ITO layer is fabricated by using a magnetron sputtering process.

[0113] The first transparent conductive sub-layer formed under the above conditions contacts the epitaxial structure, which can ensure the current spreading ability and provides conditions for sputtering the second and third transparent conductive sub-layers.

[0114] Second step, anneal the ITO layer to obtain the first transparent conductive sub-layer.

[0115] In an embodiment of the present disclosure, using an annealing furnace, under a gas atmosphere with an N 2 flow rate of 150 - 250 mL / min and an O 2 flow rate of 20 - 50 mL / min, an annealing treatment is performed for 3 - 8 min.

[0116] Exemplarily, using an annealing furnace, under a gas atmosphere with an N 2 flow rate of 200 mL / min and an O 2 flow rate of 35 mL / min, an annealing treatment is performed for 5 min.

[0117] Annealing can repair the lattice damage introduced during the sputtering process and reduce interface defects, preventing damage to the underlying GaN layer caused by sputtering. Passing N 2 and O 2 for annealing can prevent oxidation of the surface of the first transparent conductive sub-layer.

[0118] In the fabrication of the first step, the oxygen flow rate can be gradually increased, enabling oxygen atoms in the ITO layer to combine with oxygen in the annealing furnace, promoting the reaction of SnO in the ITO layer to form SnO 2 , reducing the resistivity of the ITO layer and increasing its light transmittance. Moreover, increasing the oxygen flow rate can increase the carrier concentration of the ITO film layer, thereby increasing the conductivity of the ITO film layer and the good contact between the ITO and the metal electrode.

[0119] Third step, fabricate the second transparent conductive sub-layer.

[0120] In an embodiment of the present disclosure, under the conditions that the water vapor flow rate is 4 sccm to 10 sccm, the temperature is 100 to 150 °C, the Ar flow rate is 50 sccm to 60 sccm, the air pressure is 0.3 to 0.8 Pa, and the sputtering power density is 1 to 3 W / cm -2 a second transparent conductive electron layer is obtained by fabricating a 20-40 nm hydrogen- and fluorine-doped indium oxide layer using a magnetron sputtering process.

[0121] In this step, an In 2 O 3 -based SCOT target is used to sputter the hydrogen- and fluorine-doped indium oxide layer.

[0122] Among them, the material cost of the hydrogen- and fluorine-doped indium oxide layer is lower than that of pure ITO material.

[0123] Exemplarily, under the conditions that the water vapor flow rate is 8 sccm, the temperature is 125 °C, the Ar flow rate is 55 sccm, the air pressure is 0.5 Pa, and the sputtering power density is 2 W / cm -2 a second transparent conductive electron layer is obtained by fabricating a 30 nm hydrogen- and fluorine-doped indium oxide layer using a magnetron sputtering process.

[0124] Using the above conditions to fabricate the hydrogen- and fluorine-doped indium oxide to form the second transparent conductive electron layer, the second transparent conductive electron layer replaces part of the oxygen atoms in ITO in the form of F- ions, thereby generating additional free electrons, which is beneficial to improving the conductivity of the material, extending the service life, and improving the stability. The above fabrication parameters are suitable for the fabrication of the hydrogen- and fluorine-doped indium oxide. In contrast, ITO is prone to oxidation and structural damage under these conditions, resulting in performance degradation. Therefore, the fabrication parameters of the first and third transparent conductive electron layers are quite different from those of the second transparent conductive electron layer.

[0125] Fourth step, fabricate the third transparent conductive electron layer.

[0126] In an embodiment of the present disclosure, under the conditions that the power frequency is 12 to 15 MHz, the atmosphere is a mixed gas of O 2 and Ar, the gas flow rate is 5 to 15 sccm, the air pressure is 0.2 to 0.8 Pa, and the sputtering power is 400 to 600 W, a 20-70 nm ITO layer is fabricated using a magnetron sputtering process to obtain the third transparent conductive electron layer.

[0127] Among them, the sputtering power during the fabrication of the third transparent conductive electron layer is higher than that during the fabrication of the first transparent conductive electron layer.

[0128] Exemplarily, when the power frequency is 13.56 MHz, the atmosphere is O 2Under the conditions of a mixed gas of [gas name] and Ar, a gas flow rate of 10.8 sccm, a gas pressure of 0.4 Pa, and a sputtering power of 550 W, a 40-nm third transparent conductive electron layer is fabricated by using a magnetron sputtering process.

[0129] Among them, the third transparent conductive electron layer has a high transmittance without annealing, which is beneficial to the emission of light.

[0130] The third transparent conductive electron layer fabricated under the above conditions can ensure the anti-EOS ability and, on the other hand, is beneficial to the emission of light.

[0131] Step 5: Perform patterning.

[0132] Patterning the ITO thin film may include: spin-coating photoresist; forming a mask pattern through exposure and development; and wet-etching the ITO thin film under the shielding of the mask pattern.

[0133] S25: Fabricate the electrode structure.

[0134] Figure 8 It is a schematic structural diagram in the manufacturing process of a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 8 . The first electrode 401 is connected to the transparent conductive layer 200, and the second electrode 402 is connected to the bottom surface of the step.

[0135] In the embodiment of the present disclosure, the first electrode and the second electrode can be fabricated by a sputtering process.

[0136] In the embodiment of the present disclosure, the first electrode and the second electrode can be one or a combination of multiple metal or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt, and Au.

[0137] Exemplarily, the first electrode and the second electrode are a stack of Cr, Al, AlCu, Ti, Ni, Pt, and Au.

[0138] S26: Fabricate the passivation layer.

[0139] In the embodiment of the present disclosure, the passivation layer is fabricated by PECVD.

[0140] In the embodiment of the present disclosure, the passivation layer can be a passivation layer made of SiO 2 、Si 3 N 4 、SiN x or SiON.

[0141] Exemplarily, the passivation layer is a passivation layer made of SiO 2 fabricated.

[0142] S27: Open holes corresponding to the electrode structure on the passivation layer.

[0143] In the embodiments of the present disclosure, openings are formed in the passivation sub-layer by wet etching or dry etching methods.

[0144] Openings are formed in the passivation layer corresponding to the first electrode in the electrode structure, and openings are formed in the passivation layer corresponding to the second electrode in the electrode structure.

[0145] The above are only optional embodiments of the present disclosure, and are not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included within the protection scope of the present disclosure.

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises: an epitaxial structure (100) and a transparent conductive layer (200); The transparent conductive layer (200) is on the surface of the epitaxial structure (100), and comprises a first transparent conductive sublayer (201), a second transparent conductive sublayer (202), and a third transparent conductive sublayer (203) which are sequentially stacked on the epitaxial structure (100), the first transparent conductive sublayer (201) being an ITO layer, the second transparent conductive sublayer (202) being an indium oxide layer doped with hydrogen and fluorine, and the third transparent conductive sublayer (203) being an ITO layer.

2. The light emitting diode according to claim 1, characterized in that: The thickness of the first transparent conductive sublayer (201) is 5 to 10 nm, the thickness of the second transparent conductive sublayer (202) is 20 to 40 nm, and the thickness of the third transparent conductive sublayer (203) is 20 to 70 nm.

3. The light emitting diode according to claim 1 or 2, characterized in that: The first transparent conductive sublayer (201), the second transparent conductive sublayer (202) and the third transparent conductive sublayer (203) are all sputtered layers, and the sputtering power of the first transparent conductive sublayer (201) is less than the sputtering power of the second transparent conductive sublayer (202) and the third transparent conductive sublayer (203).

4. The light emitting diode according to claim 1 or 2, characterized in that: The mass ratio of In2O3 to F in the second transparent conductive sublayer (202) is 97:3 to 99:

1.

5. The light emitting diode according to claim 1 or 2, characterized in that: The mass fraction of In2O3 in the first transparent conductive sublayer (201) and the third transparent conductive sublayer (203) is 85-95%, and the mass fraction of SnO2 in the first transparent conductive sublayer (201) and the third transparent conductive sublayer (203) is 5-15%.

6. The light emitting diode according to claim 1 or 2, characterized in that: The first transparent conductive sublayer (201) is an annealed layer, and the second transparent conductive sublayer (202) and the third transparent conductive sublayer (203) are non-annealed layers.

7. A method for preparing a light emitting diode, characterized in that: The method comprises: fabricating epitaxial structures; A transparent conductive layer is manufactured on the surface of the epitaxial structure, wherein the transparent conductive layer comprises a first transparent conductive sublayer, a second transparent conductive sublayer and a third transparent conductive sublayer which are sequentially stacked on the epitaxial structure, wherein the first transparent conductive sublayer is an ITO layer, the second transparent conductive sublayer is an indium oxide layer doped with hydrogen and fluorine, and the third transparent conductive sublayer is an ITO layer.

8. The method for preparing a light emitting diode according to claim 7, characterized in that: The method of manufacturing the first transparent conductive sublayer comprises: Under the conditions of oxygen flow rate of 1-3 mL / min, temperature of 100-120 °C, Ar flow rate of 50 sccm-60 sccm, gas pressure of 0.3-0.8 Pa, and sputtering power density of 0.5-1.5 Wcm -2 Under the conditions of , a 5-10 nm ITO layer is produced by using a magnetron sputtering process; The ITO layer is annealed to obtain the first transparent conductive sub-layer.

9. The method for preparing a light emitting diode according to claim 7, characterized in that: The second transparent conductive sublayer is manufactured, comprising: When the water vapor flow rate is 4 sccm~10 sccm, the temperature is 100~150℃, the Ar flow rate is 50 sccm~60 sccm, the gas pressure is 0.3~0.8Pa, and the sputtering power density is 1~3Wcm -2 Under the conditions of , a 20-40 nm hydrogen and fluorine doped indium oxide layer is prepared by using a magnetron sputtering process to obtain the second transparent conductive sublayer.

10. The method for preparing a light emitting diode according to claim 7, characterized in that: The third transparent conductive sublayer is manufactured, comprising: Under the conditions of a power frequency of 12 to 15 MHz, an atmosphere of a mixed gas of O2 and Ar, a gas flow rate of 5 to 15 sccm, a gas pressure of 0.2 to 0.8 Pa, and a sputtering power of 400 to 600 W, a 20 to 70 nm ITO layer is produced by utilizing a magnetron sputtering process to obtain the third transparent conductive sub-layer.

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