Memristor based on quasi 2D / 3D heterojunction perovskite and preparation method and application thereof

Abstract

The invention provides a memristor based on a quasi 2D / 3D heterojunction perovskite and a preparation method and application of the memristor. The invention belongs to the technical field of memristors. In the memristor, a three-dimensional (3D) (FAPbI3) 0.95 (MAPbBr3) 0.05 perovskite thin film and a CF3-PEAI quasi-two-dimensional perovskite thin film are prepared by adopting a spin coating method and are used as functional layers of the memristor. The device has a stable I-V cycle characteristic, not only can realize a stable conductivity adjustable characteristic under positive and negative voltages, but also can accurately simulate a recognition task of a handwritten data set by utilizing the device and linear updating for enhancing and inhibiting a conductivity weight, and the accuracy rate can reach 94%. The invention aims to provide the perovskite memristor with a novel structure so as to meet the requirements of efficient neural synaptic bionic and brain-like computing system construction.

Description

Technical Field

[0001] The present invention relates to the technical field of memristors, and specifically to a memristor based on quasi-2D / 3D heterojunction perovskite, its preparation method and application. Background Art

[0002] In the current development of computer technology, traditional architectures have significant limitations in processing complex data and simulating the functions of the human brain. As a new type of electronic component, memristors have attracted much attention due to their unique resistive memory characteristics and potential neurobionic functions.

[0003] Patent application document CN115548213A discloses a memristor, its manufacturing method, and an electrical device. The memristor prefabricated structure includes a 3D perovskite thin film, and a 2D perovskite thin film is fabricated on the surface of the 3D perovskite thin film. The 2D perovskite thin film and the 3D perovskite thin film form a perovskite heterojunction thin film to obtain the memristor. The 2D perovskite thin film acts as an interface passivation layer, which can effectively improve the hydrophobicity of the perovskite heterojunction thin film, thereby extending the service life of the memristor; at the same time, the 2D perovskite thin film can also improve the surface morphology of the 3D perovskite thin film and enhance the coverage uniformity, making the fabricated memristor have excellent switching performance. The 3D perovskite thin film is methylammonium lead iodide (abbreviated as MAPbI 3 ), and the 2D perovskite thin film is a thin film formed from an organic ammonium salt solution. It discloses that the memristor has excellent switching performance. However, the existing memristors still need to be improved in terms of performance stability and the accuracy of simulating neural synapse functions. Summary of the Invention

[0004] The purpose of the present invention is to provide a memristor based on quasi-2D / 3D heterojunction perovskite, its preparation method and application. The memristor based on quasi-2D / 3D heterojunction perovskite has the advantages of stable cycling characteristics, adjustable positive and negative conductance, high accuracy in simulating neural computing, etc., and can be used to form neuro-synaptic bionic devices.

[0005] The present invention is implemented as follows:

[0006] A memristor based on quasi-2D / 3D heterojunction perovskite, whose structure from bottom to top is successively a glass substrate, an ITO bottom electrode, (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 functional layer, CF 3 -PEAI quasi-two-dimensional functional layer, and an Ag top electrode.

[0007] In the above solution, preferably, the ITO bottom electrode is prepared by magnetron sputtering, and (FAPbI 3 ) 0.95(MAPbBr 3 ) 0.05 The functional layer is prepared by spin - coating the precursor solution to obtain CF 3 -PEAI quasi - two - dimensional functional layer, and the Ag top electrode is prepared by evaporation coating method.

[0008] In the above - mentioned scheme, preferably, the thickness of the ITO bottom electrode is 100 nm, and the (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 The thickness of the functional layer is about 500 nm, the thickness of the CF 3 -PEAI quasi - two - dimensional functional layer is about 10 nm, and the thickness of the Ag top electrode is about 150 nm.

[0009] The preparation method of the memristor based on the quasi - 2D / 3D heterojunction perovskite in the present invention includes the following steps:

[0010] a. Deposition of the bottom electrode: Sputter the ITO bottom electrode on the glass substrate by using a magnetron sputtering device;

[0011] b. Preparation of the functional layer: Use the multi - step spin - coating method to prepare a uniform (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 functional layer. On the (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 functional layer, spin - coat with the CF 3 -PEAI precursor solution to obtain the CF 3 -PEAI quasi - two - dimensional functional layer;

[0012] c. Evaporation coating of the top electrode: Evaporate the Ag top electrode on the CF 3 -PEAI quasi - two - dimensional functional layer.

[0013] In the above - mentioned scheme, preferably, in step c, the Ag top electrode is Ag with a diameter of 100 μm and neatly arranged, and the thickness is 150 nm.

[0014] In the above - mentioned scheme, preferably, in step b, use the multi - step spin - coating method to prepare the (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 functional layer. Specifically, first prepare the precursor solution according to the following ratio: where the solutes are PbI 2 : 597.8 mg / mL, FAI: 212.4 mg / mL, MABr: 7.3 mg / mL, PbBr2 : 23.9 mg / mL, MACI: 24 mg / mL, the solvent is DMF and DMSO, and the volume ratio of DMF to DMSO is 4:1. Vortex and dissolve the prepared solution, and then shake it at room temperature for about 12 h to obtain the perovskite precursor solution, which is (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 . Spin-coat the above perovskite precursor solution on the bottom electrode by multi-step spin-coating steps. First, statically spin-coat 30 μL of the above solution evenly on the bottom electrode, rotate at a speed of 1100 rpm for 10 s, then increase the speed to 6000 rpm and rotate for another 30 s. During the dynamic spin-coating process from the 20th to the 25th second, add 110 μL of chlorobenzene; finally, anneal at 100 °C for 1 h. After annealing, let the sample stand to room temperature to obtain a 500-nm-thick (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 functional layer.

[0015] In the above solution, preferably, in step b, the CF 3 -PEAI precursor solution spin-coating method is used to prepare the CF 3 -PEAI quasi-two-dimensional functional layer. Specifically: Spin the prepared CF 3 -PEAI precursor solution at a speed of 3000 rpm for 25 s, and set the air pressure to 3000 Pa. During the rotation, dynamically spin-coat and add 25 - 30 μL of the CF 3 -PEAI precursor solution. After spin-coating, quickly put the sample into a vacuum drying oven for annealing treatment. The annealing temperature is usually set at 100 °C, and the annealing time is 15 minutes. During the annealing process, the CF 3 -PEAI molecules will react with the perovskite thin film to form the CF 3 -PEAI quasi-two-dimensional functional layer.

[0016] The memristor based on the quasi-2D / 3D heterojunction perovskite provided by the present invention can simulate the functions of neural synapses. The present invention utilizes the fact that positive and negative electrical stimulations will affect the change of the conductance parameters of the device, and uses the characteristic that the conductance can be linearly modulated positively and negatively to simulate neural network calculations.

[0017] The present invention uses the spin-coating method to prepare the three-dimensional (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 perovskite thin film and uniform CF 3- The PEAI quasi-two-dimensional thin film is used as the functional layer of the memristor to achieve the characteristic of stable regulation of positive and negative conductances. The device has stable I-V cycling characteristics, can achieve the characteristic of adjustable conductance under positive and negative voltages, and can also accurately simulate the recognition task of the handwritten dataset by using the device and the linear update of the enhanced and suppressed conductance weights, with an accuracy rate of up to 94%. The present invention aims to provide a perovskite memristor with a novel structure to meet the requirements of efficient neural synapse bionics and the construction of a brain-like computing system. Description of the Drawings

[0018] Figure 1 It is a schematic structural diagram of the memristor based on the quasi-2D / 3D heterojunction perovskite in Embodiment 1 of the present invention.

[0019] Figure 2 It is a voltage-current characteristic curve graph of the memristor based on the quasi-2D / 3D heterojunction perovskite prepared in Embodiments 1 to 3 of the present invention; among them, (a) is the voltage-current characteristic curve graph of the memristor prepared in Embodiment 1, (b) is the voltage-current characteristic curve graph of the memristor prepared in Embodiment 2, and (c) is the voltage-current characteristic curve graph of the memristor prepared in Embodiment 3.

[0020] Figure 3 It is a voltage-current characteristic curve graph of the memristor based on the quasi-2D / 3D heterojunction perovskite prepared in Embodiment 1 of the present invention after continuous scanning 5 times; among them, (a) is the voltage-current characteristic curve graph of the memristor after continuous scanning 5 times under positive unidirectional voltage, and (b) is the voltage-current characteristic curve graph of the memristor after continuous scanning 5 times under negative unidirectional voltage.

[0021] Figure 4 It is a conductance enhancement and suppression graph of the memristor based on the quasi-2D / 3D heterojunction perovskite prepared in Embodiment 1 of the present invention.

[0022] Figure 5 It is a schematic diagram and an accuracy rate graph of the memristor based on the quasi-2D / 3D heterojunction perovskite prepared in Embodiment 1 of the present invention simulating a neural network; among them, (a) is the schematic diagram of the memristor simulating a neural network, and (b) is the accuracy rate graph of using the memristor to simulate the recognition task of the handwritten dataset by the neural network. Detailed Embodiments

[0023] Embodiment 1

[0024] As Figure 1 shown, the structure of the memristor based on the quasi-2D / 3D heterojunction perovskite provided in this embodiment from bottom to top is successively a glass substrate 1, an ITO layer 2, (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05Functional layer 3, CF 3 -PEAI functional layer 4, Ag top electrode 5. (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 Functional layer 3 is a three-dimensional (3D) functional layer, CF 3 -PEAI functional layer 4 is a quasi-two-dimensional (2D) functional layer, (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 Functional layer 3 and CF 3 -PEAI functional layer 4 form a quasi-2D / 3D heterojunction structure.

[0025] ITO layer 2 is the ITO bottom electrode, with a thickness of about 100 nm, prepared by magnetron sputtering. (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 Functional layer 3 has a thickness of about 500 nm and is prepared by a multi-step spin coating method. CF 3 -PEAI functional layer 4 has a thickness of about 10 nm and is prepared by spin coating. Ag top electrode 5 has a thickness of about 150 nm and is prepared by evaporation. FA refers to formamidine, MA refers to methylamine; CF 3 -PEAI refers to 4-trifluoromethylphenethylammonium iodide.

[0026] The preparation method of the memristor based on the quasi-2D / 3D heterojunction perovskite in this embodiment is as follows:

[0027] (1) Clean the substrate. Ultrasonically clean the glass substrate in acetone, absolute ethanol, and deionized water for 15 min respectively, and dry it with nitrogen for standby.

[0028] (2) Fix the clean glass substrate on the sample stage of the magnetron sputtering chamber, fix the ITO material on the target stage, close the chamber and evacuate it to a vacuum environment. Set the working pressure to 0.5 Pa and the sputtering power to 150 W, and sputter for 10 min in an environment where argon with a flow rate of 25 sccm and oxygen with a flow rate of 50 sccm are introduced to obtain an ITO bottom electrode with a thickness of about 100 nm.

[0029] (3) First, prepare the precursor solution according to the following ratio: where the solutes are PbI 2 : 597.8 mg / mL, FAI: 212.4 mg / mL, MABr: 7.3 mg / mL, PbBr 2: 23.9 mg / mL, MACI: 24 mg / mL, with the solvent being DMF and DMSO, and the volume ratio of the two being 4:1. The prepared solution was vortexed for dissolution and then shaken at room temperature for about 12 h to obtain a perovskite precursor solution, namely (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 . The above perovskite precursor solution was spin-coated on the bottom electrode using a multi-step spin-coating procedure. First, 30 μL of the above solution was spin-coated statically and evenly spread on the bottom electrode, rotated at a speed of 1100 rpm for 10 s, then the speed was increased to 6000 rpm and rotated for 30 s. During the dynamic spin-coating process from 20 - 25 s, 110 μL of chlorobenzene was added dropwise; finally, it was annealed at 100 °C for 1 h. After the annealing was completed, the sample was left to stand at room temperature to obtain a 500-nm-thick (FAPbI 3 ) 0.95 (MAPbBr 3 ) 0.05 functional layer. During the spin-coating process, the air pressure was set to 1000 Pa at 1100 rpm and 2000 Pa at 6000 rpm to control the stability of the spin-coating environment.

[0030] (4) CF 3 -PEAI precursor solution was spin-coated on the sample prepared in step (3) to prepare a dense and uniform CF 3 -PEAI quasi-two-dimensional functional layer. Specifically: The prepared CF 3 -PEAI precursor solution was rotated at a speed of 3000 rpm for 25 s, and the air pressure was set to 3000 Pa. During the rotation, 25 - 30 μL of CF 3 -PEAI precursor solution was added dropwise during dynamic spin-coating. After the spin-coating was completed, the sample was quickly placed in a vacuum drying oven for annealing treatment. The annealing temperature was usually set at 100 °C, and the annealing time was 15 minutes. During the annealing process, CF 3 -PEAI molecules would react with the perovskite thin film to form a 10-nm-thick quasi-two-dimensional CF3-PEAI functional layer.

[0031] (5) Then, the device prepared in step (4) was placed on a mask plate and transferred into a vacuum evaporation instrument. Active metal Ag was selected. The mask plate used during the preparation was a square with neatly arranged holes with a diameter of 100 μm and a size of 2 cm × 2 cm. The power supply was started, and when the vacuum was less than 1×10 -4 the following, the knob power was adjusted to start evaporation. After reaching the expected film thickness, the power supply was turned off. The thickness of the prepared Ag top electrode was about 150 nm.

[0032] Example 2

[0033] Compared with Example 1, for the memristor based on quasi-2D / 3D heterojunction perovskite provided in this example, its three-dimensional functional layer is (FAPbI 3 ) 0.5 (MAPbBr 3 ) 0.5 functional layer, and the rest of the structure is the same as that in Example 1 and will not be elaborated here.

[0034] The preparation method of the memristor based on quasi-2D / 3D heterojunction perovskite in this example is as follows:

[0035] (1) Clean the substrate. Ultrasonically clean the glass substrate in acetone, absolute ethanol, and deionized water for 15 minutes respectively, and dry it with nitrogen for later use.

[0036] (2) Fix the clean glass substrate on the sample stage of the magnetron sputtering chamber, and fix the ITO material on the target stage. Close the chamber and evacuate it to a vacuum environment. Set the working pressure to 0.5 Pa and the sputtering power to 150 W. Sputter for 10 minutes in an environment where argon with a flow rate of 25 sccm and oxygen with a flow rate of 50 sccm are introduced to obtain an ITO bottom electrode with a thickness of about 100 nm.

[0037] (3) Prepare the solution according to the following ratio: Accurately weigh the raw materials PbI 2 , FAI, PbBr 2 , MABr, and MACl according to a specific ratio. Add the weighed raw materials into a container with DMF:DMSO (volume ratio of 4:1) as the solvent, so that the concentrations of the raw materials in the solvent are: the concentration of PbI 2 is 309.6 mg / mL; the concentration of FAI is 111.8 mg / mL; the concentration of PbBr 2 is 126.5 mg / mL; the concentration of MABr is 38.5 mg / mL; the concentration of MACl is 24 mg / mL. In the solvent, first promote the preliminary dissolution of the raw materials by vortex oscillation, and then shake at room temperature for about 12 hours until a uniform and clear perovskite precursor solution is obtained. The composition of this solution is 1.3 M (FAPbI 3 ) 0.5 (MAPbBr 3 ) 0.5。Spin-coat the perovskite precursor solution prepared above on the sample prepared in step (2) using the multi-step spin-coating method. First, spin-coat 30 μL of the above solution statically and evenly spread it on the bottom electrode. First, rotate at a speed of 1100 rpm for 10 s, and then quickly increase the speed to 6000 rpm and continue to rotate for 30 s. During the spin-coating process, the air pressure is set to 1000 Pa at 1100 rpm and 2000 Pa at 6000 rpm to control the stability of the spin-coating environment. During the rotation at 6000 rpm, 110 μL of chlorobenzene is dynamically dropped within 20 - 25 s. After spin-coating is completed, carefully transfer the sample to the annealing equipment. Anneal at a temperature of 100 °C for 1 h. After annealing is completed, let the sample naturally stand still and cool to room temperature in the equipment to avoid stress or defects in the film caused by sudden temperature changes. Finally, a (FAPbI 3 ) 0.5 (MAPbBr 3 ) 0.5 functional layer with a thickness of about 500 nm is obtained.

[0038] (4) Prepare a dense and uniform CF 3 -PEAI quasi-two-dimensional functional layer on the sample prepared in step (3) using the CF 3 -PEAI precursor solution spin-coating method. Specifically: Spin the prepared CF 3 -PEAI precursor solution at a speed of 3000 rpm for 25 s, and the air pressure is set to 3000 Pa. During the rotation, dynamically spin-coat and drop 25 - 30 μL. After spin-coating is completed, quickly put the sample into a vacuum drying oven for annealing treatment. The annealing temperature is usually set at 100 °C, and the annealing time is 15 minutes. During the annealing process, μL molecules will react with the perovskite film to form a 10-nm-thick quasi-two-dimensional CF 3 -PEAI functional layer.

[0039] (5) Then place the device prepared in step (4) on the mask plate and transfer it into the vacuum evaporation instrument. Select the active metal Ag. The mask plate used during preparation is a square with neatly arranged holes with a diameter of 100 μm and a size of 2 cm × 2 cm. Start the power supply. When the vacuum is less than 1×10 -4 below, adjust the knob power to start evaporation. After reaching the expected film thickness, turn off the power supply. The thickness of the prepared Ag top electrode is about 150 nm.

[0040] Example 3

[0041] Compared with Example 1, for the memristor based on the quasi-2D / 3D heterojunction perovskite provided in this example, its three-dimensional functional layer is (FAPbI 3 ) 0.05 (MAPbBr 3 )0.95 Functional layer, and the rest of the structure is the same as that of Example 1 and will not be elaborated here.

[0042] The preparation method of the memristor based on quasi-2D / 3D heterojunction perovskite in this embodiment is as follows:

[0043] (1) Clean the substrate. Ultrasonically clean the glass substrate in acetone, absolute ethanol, and deionized water for 15 min respectively, and dry it with nitrogen for standby.

[0044] (2) Fix the clean glass substrate on the sample stage of the magnetron sputtering chamber, and fix the ITO material on the target stage. Close the chamber and evacuate it to a vacuum environment. Set the working pressure to 0.5 Pa and the sputtering power to 150 W. Sputter for 10 min in an environment where argon with a flow rate of 25 sccm and oxygen with a flow rate of 50 sccm are introduced to obtain an ITO bottom electrode with a thickness of about 100 nm.

[0045] (3) Prepare the solution according to the following ratio: Accurately weigh the raw materials PbI 2 , FAI, PbBr 2 , MABr, and MACl according to a specific ratio. Add the weighed raw materials into a container with DMF:DMSO (volume ratio 4:1) as the solvent, so that the concentrations of the raw materials in the solvent are: the concentration of PbI 2 is 29.59 mg / mL; the concentration of FAI is 10.62 mg / mL; the concentration of PbBr 2 is 215.1 mg / mL; the concentration of MABr is 65.7 mg / mL; the concentration of MACl is 24 mg / mL. In the solvent, first promote the preliminary dissolution of the raw materials by vortex oscillation, and then shake at room temperature for about 12 h until a uniform and clear perovskite precursor solution is obtained. The composition of this solution is 1.3 M (FAPbI 3 ) 0.05 (MAPbBr 3 ) 0.95。Spin-coat the perovskite precursor solution prepared above on the sample prepared in step (2) using a multi-step spin-coating method. Specifically, first spin-coat 30 μL of the above perovskite precursor solution statically and evenly spread it on the bottom electrode. First, rotate at a speed of 1100 rpm for 10 s to initially and evenly spread the solution on the substrate; then quickly increase the speed to 6000 rpm and continue to rotate for 30 s to further evenly distribute the solution and remove the excess solution. During the spin-coating process at two different speeds, the air pressure is set to 1000 Pa and 2000 Pa respectively to control the stability of the spin-coating environment. At a speed of 6000 rpm, dynamically dropwise add 110 μL of chlorobenzene within 20 - 25 s. After completing the spin-coating, carefully transfer the sample to an annealing device. Perform annealing treatment at a temperature of 100 °C for a time set to 1 h. After annealing, let the sample naturally stand still and cool to room temperature in the device to avoid stress or defects in the film caused by sudden temperature changes. Finally, a (FAPbI 3 ) 0.05 (MAPbBr 3 ) 0.95 functional layer with a thickness of about 500 nm is obtained.

[0046] (4) Prepare a dense and uniform CF 3 -PEAI quasi-two-dimensional functional layer on the sample prepared in step (3) using the CF 3 -PEAI precursor solution spin-coating method. Specifically: Spin the prepared CF 3 -PEAI precursor solution at a speed of 3000 rpm for 25 s, and set the air pressure to 3000 Pa. During the rotation, dynamically spin-coat and dropwise add 25 - 30 μL. After completing the spin-coating, quickly put the sample into a vacuum drying oven for annealing treatment. The annealing temperature is usually set at 100 °C, and the annealing time is 15 minutes. During the annealing process, CF 3 -PEAI molecules will react with the perovskite film to form a CF 3 -PEAI quasi-two-dimensional functional layer.

[0047] (5) Then place the device prepared in step (4) on a mask plate and transfer it into a vacuum evaporation instrument. Select the active metal Ag. The mask plate used during preparation is a square with neatly arranged holes with a diameter of 100 μm and a size of 2 cm × 2 cm. Turn on the power supply. When the vacuum is less than 1×10 -4 below, adjust the knob power to start evaporation. After reaching the expected film thickness, turn off the power supply. The thickness of the prepared Ag top electrode is about 150 nm.

[0048] Figure 2 are the voltage-current characteristic curves of the memristors prepared in Examples 1 - 3. Among them, (a) is the device prepared in Example 1 with the functional layer being (FAPbI 3 )0.95 (MAPbBr 3 ) 0.05 device of perovskite material. As the voltage continuously increases, when the voltage reaches about 0.6 V, the device slowly changes from a high-resistance state to a low-resistance state and the device conducts. Subsequently, when positive and negative voltage scans are performed on the device, it can be found that the device has typical bipolar resistive switching behavior. (b) and (c) are respectively the IV curves of the devices prepared in Example 2 and Example 3. It can be seen from the figure that the perovskite material is (FAPbI 3 ) 0.5 (MAPbBr 3 ) 0.5 and (FAPbI 3 ) 0.05 (MAPbBr 3 ) 0.95 devices have unstable I-V curves, large currents and small windows, and unstable performance.

[0049] Figure 3 is the voltage-current curve of the memristor prepared in Example 1 after 5 consecutive scans. From Figure 3 it can be seen that the device has the function of regulating conductance and realizes the storage of slow positive and negative changes in conductance in the same device.

[0050] Figure 4 is the conductance enhancement inhibition diagram of the memristor prepared in Example 1. From Figure 4 it can be seen that the device realizes linear conductance regulation after applying 20 positive and negative pulses.

[0051] Figure 5 is the neural network simulation function of the memristor prepared in Example 1, showing that the change in conductance weight of the device prepared by the present invention is highly linear, and the accuracy rate of simulating handwritten digit recognition can reach 94%.

[0052] The above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit them. Those of ordinary skill in the art can modify or equivalently replace the technical solutions of the present invention without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to the claims.

Claims

1. A memristor based on quasi-2D / 3D heterojunction perovskite, characterized in that: Its structure from bottom to top is glass substrate, ITO bottom electrode, (FAPbI3) 0.95 (MAPbBr3) 0.05 Functional layer, CF3-PEAI quasi-two-dimensional functional layer, Ag top electrode.

2. The memristor based on quasi-2D / 3D heterojunction perovskite according to claim 1, characterized in that: The thickness of the ITO bottom electrode is 100nm, and the (FAPbI3) 0.95 (MAPbBr3) 0.05 The thickness of the functional layer is 500 nm, the thickness of the CF3-PEAI quasi-two-dimensional functional layer is 10 nm, and the thickness of the Ag top electrode is 150 nm.

3. The memristor based on quasi-2D / 3D heterojunction perovskite according to claim 1, characterized in that ITO The bottom electrode is prepared by magnetron sputtering, (FAPbI3) 0.95 (MAPbBr3) 0.05 The functional layer is prepared by multiple spin coating methods, the CF3-PEAI quasi-two-dimensional functional layer is prepared by spin coating method, and the Ag top electrode is prepared by evaporation method.

4. The method for preparing a memristor based on quasi-2D / 3D heterojunction perovskite according to any one of claims 1 to 3, characterized in that: The steps include: a. Bottom electrode deposition: On a glass substrate, an ITO bottom electrode is sputtered using a magnetron sputtering device; b. Functional layer preparation: Use multi-step spin coating method to prepare a uniform surface (FAPbI3) 0.95 (MAPbBr3) 0.05 Functional layer, in (FAPbI3) 0.95 (MAPbBr3) 0.05 On the functional layer, a CF3-PEAI precursor solution is spin-coated to obtain a CF3-PEAI quasi-two-dimensional functional layer; c. Top electrode evaporation: Evaporate Ag top electrode on the CF3-PEAI quasi-two-dimensional functional layer.

5. The method for preparing a memristor based on quasi-2D / 3D heterojunction perovskite according to claim 4, characterized in that: In step c, the top electrode is neatly arranged Ag with a diameter of 100 μm and a thickness of 150 nm.

6. The method for preparing a memristor based on quasi-2D / 3D heterojunction perovskite according to claim 4, characterized in that: In step b, a multi-step spin coating method is used to prepare (FAPbI3) 0.95 (MAPbBr3) 0.05 Functional layer, specifically as follows: first, a precursor solution is prepared according to the following ratio: the solute is PbI2: 597.8 mg / mL, FAI: 212.4 mg / mL, MABr: 7.3 mg / mL, PbBr2: 23.9 mg / mL, MACI: 24 mg / mL, and the solvent is DMF and DMSO, and the volume ratio of the two is 4:1; the prepared precursor solution is vortexed to dissolve, and shaken at room temperature for 12 hours to obtain a perovskite precursor solution, namely (FAPbI3) 0.95 (MAPbBr3) 0.05 ; The above perovskite precursor solution was spin-coated on the bottom electrode using a multi-step spin coating method. First, 30 μL of the above solution was statically spin-coated and evenly spread on the bottom electrode, and rotated at 1100 rpm for 10 seconds; then the speed was increased to 6000 rpm and rotated for another 30 seconds. 110 μL of chlorobenzene was added during the dynamic spin coating process within 20-25 seconds; finally, annealed at 100°C for 1 hour. After annealing, the sample was allowed to stand at room temperature.

7. The method for preparing a memristor based on quasi-2D / 3D heterojunction perovskite according to claim 4, characterized in that: In step b, a quasi-two-dimensional functional layer of CF3-PEAI is prepared by a spin coating method, specifically: rotating at a speed of 3000 rpm for 25 seconds, and the air pressure is set to 3000 Pa; during the rotation process, 25-30 μL of CF3-PEAI precursor solution is added by dynamic spin coating, and after spin coating, the sample is quickly placed in a vacuum drying oven for annealing; the annealing temperature is set at 100°C, and the annealing time is 15 minutes; after annealing, a quasi-two-dimensional functional layer of CF3-PEAI is formed.

8. Application of the memristor based on quasi-2D / 3D heterojunction perovskite according to any one of claims 1 to 3 and the memristor based on quasi-2D / 3D heterojunction perovskite prepared by the method according to any one of claims 4 to 7 in simulating neural synapse bionics.

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