Energy-saving pure water heating control system for semiconductor wafer

Abstract

The invention relates to the technical field of heating control, in particular to a semiconductor wafer energy-saving pure water heating control system which comprises a water flow characteristic recognition module, a heat transmission optimization module, an intelligent phase change material management module, a temperature gradient regulation and control module and a waste heat energy recovery module. According to the invention, through detailed acquisition and analysis of hydrodynamic data, accurate control of water flow speed, direction and temperature, optimization of a heat transfer path and dynamic adjustment of a hydrodynamic state can be realized, improvement of a heat transfer rate is facilitated, accurate matching of heating power and actual demands is ensured, efficient utilization of energy is realized, and energy consumption is reduced. By accurately monitoring and regulating heat absorption and release of the phase-change material, the heat energy storage and recovery efficiency is effectively improved, energy waste is reduced, the temperature uniformity in the semiconductor manufacturing process is guaranteed through fine adjustment of the temperature gradient, and the energy utilization rate and the operation accuracy of the whole system are remarkably improved.

Description

Technical Field

[0001] The present invention relates to the technical field of heating control, and particularly to a semiconductor wafer energy-saving pure water heating control system. Background Art

[0002] The technical field of heating control encompasses numerous technologies applied in industrial, household, and scientific research settings. Its core content is to improve energy utilization efficiency and ensure the stability and safety of the heating process. This technical field covers from simple electric heating devices to complex automatic control systems, including various heating methods such as resistance heating, induction heating, and solar heating. Heating control technology also involves temperature monitoring and regulation techniques to adapt to different operating environments and requirements.

[0003] Among them, a semiconductor wafer energy-saving pure water heating control system refers to a system specifically designed to improve the heating efficiency of pure water in the semiconductor manufacturing process. The patent theme involves the use of renewable energy sources such as wind energy and solar energy, and alternating power generation through wind power generation mechanisms and photovoltaic power generation mechanisms to optimize energy use. The key technologies in the patent include the direct drive technology of the stirring blades of the wind power generation mechanism to improve the heat exchange efficiency of the water flow in the heating area of the hot water storage tank, and the technology of preheating the cold water in the cold water storage tank using the photovoltaic power generation mechanism. These technical means work together to achieve the goals of low power consumption and high heating efficiency.

[0004] Although existing heating control technologies are widely used in industrial, household, and scientific research applications, there are still obvious deficiencies in actual operation. Due to the lack of precise identification and analysis of water flow characteristics in traditional heating systems, the heat transfer efficiency is not high, resulting in serious energy waste. During the heating process, the lack of dynamic adjustment of water flow speed and direction causes uneven heating, affecting product quality and system stability. Existing technologies have not fully utilized heat energy recovery, resulting in a large amount of heat energy being discharged in the form of waste heat, with high environmental and economic costs. The deficiencies are particularly prominent in industries with extremely high requirements for temperature control such as semiconductor manufacturing, leading to low heating efficiency, high energy consumption, and an increased burden on the environment. Summary of the Invention

[0005] The purpose of the present invention is to solve the deficiencies existing in the prior art, and to propose a semiconductor wafer energy-saving pure water heating control system.

[0006] To achieve the above purpose, the present invention adopts the following technical solutions. A semiconductor wafer energy-saving pure water heating control system includes:

[0007] Based on the hydrodynamic data of the target area of the semiconductor wafer, the water flow characteristic identification module identifies the water flow velocity, water flow direction, and water flow resistance, records the water flow temperature changes in multiple regions, evaluates the influence of the water flow velocity on the water temperature change, analyzes the heat transfer path according to the distribution of the water flow resistance, calculates the overall heat transfer rate, and obtains the hydrodynamic transfer result;

[0008] Through the hydrodynamic transfer result, the heat transfer optimization module identifies the pure water flow condition of the semiconductor wafer, evaluates the matching degree between the water flow heat transfer rate and the heating power, adjusts the power output of the pure water heating of the semiconductor wafer, and obtains the heat transfer regulation result;

[0009] Using the heat transfer regulation result, the intelligent phase change material management module monitors the temperature state of the phase change material of the semiconductor wafer, obtains the input temperature of the steam waste heat, identifies the change in the heat absorption of the phase change material, adjusts the transmission mode of the steam waste heat, analyzes the change trend of the phase change material heat storage, and obtains the phase change heat storage state;

[0010] Based on the phase change heat storage state, the temperature gradient regulation module analyzes the temperature change in the heating area, identifies the local water temperature change, evaluates the overall temperature balance state, and obtains the water temperature gradient adjustment result.

[0011] As a further solution of the present invention, the hydrodynamic transfer result includes the hydrodynamic balance state, the heat transfer path distribution, and the overall heat transfer rate; the heat transfer regulation result includes the power output matching degree, the local heat uniformity, and the water flow heat adaptability; the phase change heat storage state includes the heat storage capacity, the heat absorption change trend, and the waste heat transmission mode; the water temperature gradient adjustment result includes the temperature gradient uniformity, the local temperature stability, and the overall temperature balance degree.

[0012] As a further solution of the present invention, the water flow characteristic identification module includes:

[0013] The water flow dynamic data acquisition sub-module obtains the hydrodynamic data of the target area of the semiconductor wafer, detects the water flow velocity, water flow direction, and water flow resistance, records the water flow velocity change, flow direction deviation angle, and force value per unit area in multiple regions, identifies the spatial distribution of the water flow resistance, calculates the water flow kinetic energy with reference to the hydrodynamic characteristics, and obtains the water flow dynamic distribution data;

[0014] Based on the water flow dynamic distribution data, the water flow temperature identification and analysis sub-module calls the water flow velocity and resistance data in multiple regions, calculates the heat exchange amount of the water flow passing through multiple regions, detects the change range of the water flow temperature under different flow velocities, and uses the formula:

[0015]

[0016] Evaluate the influence of water flow velocity on temperature change, identify the heat transfer trend by combining the flow velocity gradient in the differential area, and calculate the water flow temperature change amount;

[0017] Among them, ΔT represents the water flow temperature change amount, m i represents the water flow mass in the i-th area, c i represents the specific heat capacity of water in the i-th area, v i represents the water flow velocity in the i-th area, Δt i represents the water flow passing time in the i-th area, and n represents the total number of areas;

[0018] Based on the water flow temperature change amount, the transfer analysis sub-module evaluates the influence of water flow resistance on the heat transfer path, analyzes the heat flow transfer direction and power loss distribution, evaluates the hydrodynamic balance state, calculates the overall heat transfer rate, and obtains the hydrodynamic transfer result.

[0019] As a further solution of the present invention, the heat transfer optimization module includes:

[0020] Based on the hydrodynamic transfer result, the flow characteristic identification sub-module detects the water flow velocity distribution, flow direction offset amount and local resistance change in the pure water flow channel of the semiconductor wafer, identifies the momentum difference of the water flow in the differential area, analyzes the influence of the water flow state on heat transfer, and obtains the water flow characteristic data;

[0021] The heating power matching sub-module uses the water flow characteristic data to calculate the water flow heat transfer rate, detects the heat absorption capacity of the water flow in the differential area, evaluates the matching degree between the water flow heat transfer rate and the heating power, and uses the formula:

[0022]

[0023] Calculate the water flow heat transfer deviation value, and combine with the heating power distribution to obtain the power adaptation adjustment result;

[0024] Among them, AB represents the water flow heat transfer deviation value, Q i represents the heat absorbed by the water flow in the i-th area, P' i represents the heating power in the i-th area, t i represents the heating time in the i-th area, and n represents the total number of areas;

[0025] The power output regulation sub-module uses the power adaptation adjustment result to adjust the power output of the pure water heating of the semiconductor wafer, optimize the local heating distribution uniformity, evaluate the overall heating stability, and obtain the heat transfer regulation result.

[0026] As a further solution of the present invention, the intelligent phase change material management module includes:

[0027] Based on the heat transfer regulation result, the phase change temperature monitoring sub-module monitors the temperature state of the phase change material of the semiconductor wafer, detects the temperature distribution and time variation of the phase change material, analyzes the influence of the temperature difference in the differential area on heat absorption, identifies the temperature change trend, and obtains the phase change temperature monitoring data;

[0028] The steam waste heat regulation sub-module obtains the steam waste heat input temperature through the phase change temperature monitoring data, calculates the heat absorption rate of the phase change material, analyzes the influence of the temperature gradient on the heat flow transmission, evaluates the heat absorption capacity of the phase change material for the steam waste heat, and uses the formula:

[0029]

[0030] Calculates the absorbed amount of steam waste heat, identifies the change trend of heat storage under the influence of the temperature gradient, and obtains the steam waste heat regulation result;

[0031] Among them, Q eff represents the absorbed amount of steam waste heat, m represents the mass of the phase change material, c represents the specific heat capacity of the phase change material, T s represents the steam input temperature, T m represents the real-time temperature of the phase change material, t' represents the heat transfer time, and τ represents the heat delay time;

[0032] The change trend analysis sub-module uses the steam waste heat regulation result to analyze the change trend of heat storage of the phase change material, evaluates the heat storage capacity of the phase change material under different heat transfer modes, and identifies the dynamic equilibrium state of heat storage to obtain the phase change heat storage state.

[0033] As a further solution of the present invention, the temperature gradient regulation module includes:

[0034] The water temperature change analysis sub-module analyzes the water temperature change of the measuring points in the heating area based on the phase change heat storage state, calculates the change rate of the water temperature of the measuring points over time, compares the water temperature difference between adjacent measuring points, and obtains the water temperature gradient distribution value;

[0035] The local water flow optimization sub-module calculates the local water flow resistance based on the water temperature gradient distribution value, analyzes the influence of the local flow velocity on the water temperature change, and uses the formula:

[0036]

[0037] Calculates the resistance value of the local area, adjusts the water flow channel structure of the semiconductor wafer, and obtains the local water flow optimization result;

[0038] Among them, R i represents the local water flow resistance value, T i+1 and T i represent the water temperatures of adjacent measuring points, and V jrepresents the flow velocity of the water flow channel, P k represents the measured point pressure, A k represents the cross-sectional area of the flow-through, where z and m' are the number of channels j and the number of measurement points k respectively;

[0039] The temperature balance evaluation sub-module calls the local water flow optimization result, evaluates the temperature uniformity of the overall heating area, compares the deviation of the overall water temperature distribution, screens out the areas where the temperature uniformity deviation exceeds the set range, identifies the change trend of the overall water temperature gradient before and after optimization, and obtains the water temperature gradient adjustment result.

[0040] As a further solution of the present invention, the system further includes a waste heat energy recovery module:

[0041] The waste heat energy recovery module calls the water temperature gradient adjustment result, monitors the steam waste heat of the semiconductor wafer discharge pipeline, calculates the recoverable amount of the remaining waste heat, judges whether the waste heat energy recovery path is unobstructed, adjusts the waste heat transmission flow rate to match the recovery capacity of the heat exchange equipment, evaluates the waste heat conversion efficiency and the degree of availability, and obtains the pure water waste heat recovery control result;

[0042] The pure water waste heat recovery control result includes waste heat recovery potential, heat exchange equipment adaptability, and waste heat conversion efficiency.

[0043] As a further solution of the present invention, the waste heat energy recovery module includes:

[0044] The steam waste heat monitoring sub-module, based on the water temperature gradient adjustment result, monitors the steam waste heat of the semiconductor wafer discharge pipeline, obtains the steam temperature and flow velocity data at different time points in the discharge pipeline, calculates the steam energy per unit time, screens out the moments when the steam energy fluctuation exceeds the set threshold, and calculates the total waste heat in the differential time period to obtain the total waste heat energy value;

[0045] The waste heat recovery path determination sub-module uses the total waste heat energy value, refers to the pipeline transmission characteristics of waste heat recovery, monitors the change of the pressure gradient during the waste heat flow, and uses the formula:

[0046]

[0047] Calculates the recoverable waste heat, judges whether the waste heat recovery path is unobstructed, and obtains the recovery path analysis result;

[0048] Among them, Q r represents the recoverable waste heat, T in and T out respectively represent the temperatures of the steam entering and leaving the pipeline, M represents the steam mass flow rate per unit time, P avg represents the average pressure in the waste heat recovery path, L represents the pipeline length, and V' represents the steam flow velocity;

[0049] The waste heat recovery efficiency evaluation sub-module calls the analysis result of the recovery path, adjusts the waste heat transfer flow rate to match the recovery capacity of the heat exchange equipment, evaluates the waste heat conversion efficiency and the degree of availability, compares the real-time recovered heat with the recoverable heat, and obtains the pure water waste heat recovery control result.

[0050] Compared with the prior art, the advantages and positive effects of the present invention are as follows:

[0051] In the present invention, through the detailed acquisition and analysis of hydrodynamic data, the precise control of the water flow velocity, direction, and temperature can be achieved, the heat transfer path can be optimized, and the dynamic adjustment of the hydrodynamic state helps to improve the heat transfer rate, ensure the precise matching of the heating power with the actual demand, and realize the efficient utilization of energy. By precisely monitoring and regulating the heat absorption and release of the phase change material, the efficiency of heat energy storage and recovery can be effectively improved, and energy waste can be reduced. The careful adjustment of the temperature gradient not only ensures the temperature uniformity in the semiconductor manufacturing process but also helps to maintain the overall temperature balance, further improving the performance and safety of the heating system, making the heating process more precise and efficient, and significantly enhancing the energy utilization rate and operation accuracy of the entire system. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 is the system flow chart of the present invention;

[0053] Figure 2 is the flow chart of the water flow characteristic identification module of the present invention;

[0054] Figure 3 is the flow chart of the heat transfer optimization module of the present invention;

[0055] Figure 4 is the flow chart of the intelligent phase change material management module of the present invention;

[0056] Figure 5 is the flow chart of the temperature gradient regulation module of the present invention;

[0057] Figure 6 is the flow chart of the waste heat energy recovery module of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0058] In order to make the objectives, technical solutions, and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0059] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by terms such as "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention. In addition, in the description of the present invention, the meaning of "a plurality of" is two or more, unless otherwise specifically defined.

[0060] Please refer to Figure 1 , a semiconductor wafer energy-saving pure water heating control system includes:

[0061] The water flow characteristic identification module identifies the water flow velocity, water flow direction, and water flow resistance based on the hydrodynamic data of the target area of the semiconductor wafer, records the water temperature changes in multiple areas, evaluates the influence of the water flow velocity on the water temperature change, analyzes the heat transfer path according to the distribution of the water flow resistance, adjusts the water flow direction and flow velocity to balance the hydrodynamic state, calculates the overall heat transfer rate, and obtains the hydrodynamic transfer result;

[0062] The heat transfer optimization module identifies the pure water flow condition of the semiconductor wafer through the hydrodynamic transfer result, evaluates the matching degree between the water flow heat transfer rate and the heating power, adjusts the power output of the pure water heating of the semiconductor wafer, optimizes the local heating uniformity, and obtains the heat transfer regulation result;

[0063] The intelligent phase change material management module uses the heat transfer regulation result to monitor the temperature state of the phase change material of the semiconductor wafer, obtains the input temperature of the steam waste heat, identifies the change in the heat absorption of the phase change material, adjusts the transmission mode of the steam waste heat, analyzes the change trend of the heat storage of the phase change material, and obtains the phase change heat storage state;

[0064] The temperature gradient regulation module analyzes the temperature change in the heating area based on the phase change heat storage state, identifies the local water temperature change, adjusts the water flow resistance to optimize the local temperature distribution, evaluates the overall temperature balance state, and obtains the water temperature gradient adjustment result;

[0065] The waste heat energy recovery module calls the water temperature gradient adjustment result, monitors the steam waste heat of the semiconductor wafer discharge pipeline, calculates the recoverable amount of the remaining heat of the waste heat, judges whether the waste heat energy recovery path is unobstructed, adjusts the waste heat transmission flow rate to match the recovery capacity of the heat exchange equipment, evaluates the waste heat conversion efficiency and the available degree, and obtains the pure water waste heat recovery control result;

[0066] The hydrodynamic transfer results include the hydrodynamic equilibrium state, the heat transfer path distribution, and the overall heat transfer rate. The heat transfer regulation results include the power output matching degree, the local heat uniformity, and the water flow heat adaptability. The phase change heat storage state includes the heat storage capacity, the heat absorption change trend, and the waste heat transfer mode. The water temperature gradient adjustment results include the temperature gradient uniformity, the local temperature stability, and the overall temperature balance degree. The pure water waste heat recovery control results include the waste heat recovery potential, the heat exchange equipment adaptability, and the waste heat conversion efficiency.

[0067] Please refer to Figure 2 , the water flow characteristic identification module includes:

[0068] The hydrodynamic data acquisition sub-module obtains the hydrodynamic data of the target area of the semiconductor wafer, detects the water flow velocity, water flow direction, and water flow resistance, records the water flow velocity change, flow direction deviation angle, and force value per unit area in multiple areas, identifies the spatial distribution of the water flow resistance, calculates the water flow kinetic energy according to the hydrodynamic characteristics, and obtains the hydrodynamic distribution data;

[0069] In the process of semiconductor wafer manufacturing, it is crucial to obtain the hydrodynamic data of the target area. Detect the water flow velocity. Measure the distance that the water flow passes through per unit time using a flow velocity sensor. The water flow velocity in a certain area is measured as v = 0.5 m / s using a Doppler flowmeter. Secondly, measure the water flow direction. Use a flow direction sensor to determine the angle between the water flow and the set reference direction. The water flow direction in a certain area is θ = 30°. Evaluate the water flow resistance. Based on the pipe material and water flow characteristics, use the Hazen-Williams equation to calculate the water flow resistance. Among them, the flow velocity is:

[0070] V = 0.84935 × C × R 0.63 × S 0.54 ;

[0071] Set C = 140, hydraulic radius R = 0.05 m, and hydraulic gradient S = 0.01. Then the flow velocity is:

[0072] V ≈ 1.2;

[0073] Furthermore, calculate the resistance. Collect the water flow parameters in multiple areas, including the flow velocity change, flow direction deviation angle, and force value per unit area. Obtain the above data by arranging sensors in different areas;

[0074] The flow velocities v A = 0.5 m / s, v B = 0.6 m / s, v C = 0.55 m / s are measured in areas A, B, and C respectively. The flow directions are θ A = 30°, θ B = 35°, θ C = 33°;

[0075] Calculate the spatial distribution of water flow resistance. Based on the flow velocity in each region and the pipeline characteristics, use the Hazen-Williams equation to calculate the water flow resistance in each region. The flow velocity in region A is v A = 0.5 m / s. Substitute it into the formula to get the resistance F A = x N. The same applies to regions B and C;

[0076] Calculate the kinetic energy of water flow based on hydrodynamic characteristics. Use the formula:

[0077]

[0078] where m is the mass of water and v is the flow velocity;

[0079] Set the mass of water m = 2 kg and the flow velocity v = 0.5 m / s in a certain region. Then the kinetic energy E = 0.25. Summarize the hydrodynamic data of each region to obtain the water flow power distribution data.

[0080] The water flow temperature identification and analysis sub-module, based on the water flow power distribution data, calls the water flow velocity and resistance data of multiple regions, calculates the heat exchange amount of the water flow passing through multiple regions, and detects the change range of the water flow temperature under different flow velocities. Use the formula:

[0081]

[0082] Evaluate the influence of the water flow velocity on the temperature change, identify the heat transfer trend in combination with the flow velocity gradient in different regions, and calculate the water flow temperature change amount;

[0083] where ΔT represents the water flow temperature change amount, m i represents the water flow mass in the i-th region, c i represents the specific heat capacity of water in the i-th region, v i represents the water flow velocity in the i-th region, Δt i represents the water flow passing time in the i-th region, and n represents the total number of regions;

[0084] Parameter explanation and calculation process:

[0085] It is necessary to obtain the water mass m in each region i , which can be calculated by measuring the water volume V i in each region and using the density ρ of water, that is:

[0086] m i = V i × ρ;

[0087] Given that the density of water ρ = 1000 kg / m 3 , if the water volume V 1 = 0.5 m 3 in a certain region, then:

[0088] m 1 = 0.5 × 1000 = 500 kg;

[0089] The specific heat capacity c of water i takes the value: c i = 4184;

[0090] The water flow velocity v i can be measured by a flow velocity sensor. If the water flow velocity is measured in the i-th area:

[0091] v 1 = 0.5 m / s;

[0092] The time Δt for the water flow to pass through the i-th area i can be calculated by measuring the path length L of the water flow in this area i and combining with the water flow velocity:

[0093]

[0094] If the path length L 1 = 10 m, and the water flow velocity v 1 = 0.5 m / s, then:

[0095]

[0096] Substitute the above parameters into the formula for calculation. There are three areas, and their parameters are as follows:

[0097] Area 1: m 1 = 500 kg, c 1 = 4184, v 1 = 0.5 m / s, L 1 = 10 m, Δt 1 = 20;

[0098] Area 2: m 2 = 600 kg, c 2 = 4184, v 2 = 0.6 m / s, L 2 = 12 m, Δt 2 = 20;

[0099] Area 3: m 3 = 700 kg, c 3 = 4184, v 3 = 0.55 m / s, L 3 = 11 m, Δt 3 = 20;

[0100] Calculate the numerator part:

[0101]

[0102] Calculate the denominator part:

[0103]

[0104]

[0105] Calculate ΔT:

[0106]

[0107] The result shows that considering the water flow velocity, mass, and specific heat capacity in each region comprehensively, the change in water flow temperature is approximately 11.05 degrees Celsius. This value can be used for further analysis of the heat transfer path and optimization of the hydrodynamic state.

[0108] Based on the change in water flow temperature, the transfer analysis sub-module evaluates the impact of water flow resistance on the heat transfer path, analyzes the heat flow transfer direction and power loss distribution, evaluates the hydrodynamic equilibrium state, calculates the overall heat transfer rate, and obtains the hydrodynamic transfer result;

[0109] Analyze the hydrodynamic transfer, calculate the impact of water flow resistance on the heat transfer path, describe the fluid motion using the Navier-Stokes equation, consider factors such as viscosity and pressure. An increase in water flow resistance in a certain region leads to a change in the heat transfer path. Analyze the heat flow transfer direction and power loss distribution, evaluate the heat transfer efficiency in different regions. Regions with higher flow velocities transfer more heat but also result in greater power losses. Evaluate the hydrodynamic equilibrium state, judge the stability and uniformity of water flow in each region. Excessive flow velocity in a certain region causes turbulence, affecting the system stability. Calculate the overall heat transfer rate, considering the heat transfer conditions in each region, using the formula:

[0110]

[0111] There are three regions set, with water masses of m 1 = 2 kg, m 2 = 2.5 kg, m 3 = 3 kg, specific heat capacities of all c = 4.18, and temperature changes of ΔT 1 = 2, ΔT 2 = 2.5, ΔT 3 = 3, then:

[0112] Q total = (2 × 4.18 × 2) + (2.5 × 4.18 × 2.5) + (3 × 4.18 × 3);

[0113] Q total = 16.72 + 26.125 + 37.62 = 80.465;

[0114] Obtain the hydrodynamic transfer result.

[0115] Please refer to Figure 3 , the heat transfer optimization module includes:

[0116] Based on the hydrodynamic transfer result, the flow characteristic identification sub-module detects the water flow velocity distribution, flow direction offset and local resistance change in the pure water flow channel of the semiconductor wafer, identifies the momentum difference of the water flow in the differential area, analyzes the influence of the water flow state on heat transfer, and obtains the water flow characteristic data;

[0117] It is necessary to detect the water flow state in the water flow channel, including the changes in flow velocity, flow direction and local resistance. The acquisition of the water flow velocity distribution can be achieved by arranging high-precision flow velocity sensors at different positions. Sensors are arranged at the inlet, middle section and outlet of the pure water flow channel of the wafer respectively to obtain the water flow velocity in different areas, and the flow velocity is converted into a numerical matrix to ensure that the data can be used for subsequent calculations. Set in a certain specific water flow channel, the water flow velocity at the inlet is 2.5 m / s, the water flow velocity in the middle area drops to 1.8 m / s, and the water flow velocity at the outlet returns to 2.2 m / s. The offset angle of the water flow direction can be calculated by measuring the angle change at multiple points and the flow direction reference line. If there is a 2.5° offset between the water flow direction at a certain point and the reference direction, it indicates that this area is affected by external forces. The detection of local resistance change can be based on the calculation of the force on the water flow per unit area. Set that the measured force on the water flow in a certain area is 5.2, while the force on the water flow in another area is only 3.8, which indicates that the water flow resistance has changed. The data is used to calculate the momentum difference of the water flow in different areas. According to the law of conservation of momentum, for a certain area, the water flow momentum can be expressed as:

[0118] p = m·v;

[0119] If the water mass flow rate in the area is 1.2 kg / s and the flow velocity is 2.0 m / s, then the water flow momentum is:

[0120] 1.2×2.0 = 2.4;

[0121] By comparing the changes in water flow momentum in different areas, the influence of the water flow state on heat transfer can be analyzed. Set that if the water flow momentum in a certain area decreases sharply, it will lead to a decrease in heat transfer efficiency, and obtain the water flow characteristic data of the area.

[0122] The heating power matching sub-module uses the water flow characteristic data to calculate the water flow heat transfer rate, detects the heat absorption capacity of the water flow in the differential area, evaluates the matching degree between the water flow heat transfer rate and the heating power, and uses the formula:

[0123]

[0124] Calculate the heat transfer deviation value of the water flow, and combine it with the heating power distribution to obtain the power adaptation adjustment result;

[0125] Among them, P Δ represents the heat transfer deviation value of the water flow, Q i represents the heat absorbed by the water flow in the i-th area, P' i represents the heating power in the i-th area, t i represents the heating time in the i-th area, and n represents the total number of areas;

[0126] It is necessary to measure the change in water flow temperature. By arranging temperature sensors at multiple positions in the flow channel, the water temperature measured at the inlet is 25, and the water temperature measured at the outlet is 40. Then, the heat absorbed by the water flow can be calculated according to the heat transfer formula, that is:

[0127] Q = mcΔT;

[0128] Set the water mass flow rate to 2.5 kg / s and the specific heat capacity to 4186. Then, the heat absorbed by the water flow in a certain area can be calculated as:

[0129] 2.5×4186×(40 - 25) = 156975;

[0130] To detect the heat absorption capacity of the water flow in different areas, it is necessary to combine the time when the water flow passes through the heating area. Set the residence time of the water flow in a certain area to 4 s, and the heating power is 500 W. Then, the heat absorbed by the water flow in this area should be 500×4 = 2000. To evaluate the matching degree between the heat transfer rate of the water flow and the heating power, it is necessary to compare the deviation between the heat absorbed by the water flow and the heating power supply;

[0131] Set in three areas, Q 1 = 156975 J, Q 2 = 120000 J, Q 3 = 135000 J, P' 1 = 500 W, P' 2 = 600 W, P' 3 = 550 W, t 1 = 4 s, t 2 = 5 s, t 3 = 4.5 s, then:

[0132]

[0133] The calculated heat transfer deviation value of the water flow is used for power adjustment to obtain the power adaptation adjustment result.

[0134] The power output control sub-module adopts the power adaptation adjustment result to adjust the power output of semiconductor wafer pure water heating, optimize the local heating distribution uniformity, evaluate the overall heating stability, and obtain the heat transfer control result;

[0135] When adjusting the heating power output, compensation needs to be based on the water flow heat transfer deviation value. If the deviation value is large, the heating power needs to be appropriately increased. If the deviation value is small, the power output is maintained or decreased. In the above calculation, the water flow heat transfer deviation value is 134833.3 J. If the error of the expected water flow heat absorption is controlled within 5000 J, the heating power needs to be adjusted. The adjustment amplitude can be calculated based on the heating compensation formula:

[0136]

[0137] where P adj represents the power adjustment value, and t adj is the adjustment time;

[0138] Set the set adjustment time to 10 s, then:

[0139]

[0140] That is, the heating power needs to be adjusted by 13.48 kW to optimize the local heating uniformity, evaluate the overall heating stability, and obtain the heat transfer regulation result.

[0141] Please refer to Figure 4 , the intelligent phase change material management module includes:

[0142] The phase change temperature monitoring sub-module monitors the temperature state of the phase change material of the semiconductor wafer based on the heat transfer regulation result, detects the temperature distribution and time change of the phase change material, analyzes the influence of the temperature difference in the differential area on heat absorption, identifies the temperature change trend, and obtains the phase change temperature monitoring data;

[0143] Temperature state monitoring of the phase change material of a semiconductor wafer is required to ensure its operation within a predetermined range. During industrial production, multi-point distributed temperature sensors are used for temperature state monitoring of the phase change material, which are arranged at key positions around the wafer. The temperature sensors collect temperature data of the phase change material at different time points in real-time and transmit it to the central data processing unit. The temperature data obtained by each sensor includes a timestamp, a position number, and a temperature value. By aggregating the temperature information of different sensors, a temperature distribution map of the phase change material on the wafer can be constructed. In a specific production batch, the temperatures measured by sensors in a certain area are 52, 54, and 56 respectively, while the sensors in another area show 48, 50, and 51. This temperature difference needs to be further analyzed to determine whether the temperature distribution is uniform. Based on this temperature data, the temperature change rate can be calculated, that is, the magnitude of temperature change per unit time. If the temperature change rate in a certain area is large, it indicates that there is an abnormality in heat transfer in that area. The temperature rises from 50 to 55 in 10 seconds, and the temperature change rate is 0.5, while in the same time in another area, the temperature rises from 52 to 53, and the change rate is only 0.1. This shows that the heat flow in the former area is stronger, while the heat flow in the latter area is weaker. This non-uniform temperature change needs to be further analyzed. After obtaining the temperature states of each area, trend analysis can be performed on the temperature data at different time points to identify the temperature change pattern. Within 30 minutes, the average temperature of the phase change material rises from 45 to 60, and its overall temperature change trend can be calculated as 0.5. Further combined with the heating power output situation, it can be analyzed whether this change trend conforms to the expected heating curve. By sorting out all the measured data, phase change temperature monitoring data can be obtained.

[0144] The steam waste heat regulation sub-module obtains the steam waste heat input temperature through the phase change temperature monitoring data, calculates the heat absorption rate of the phase change material, analyzes the influence of the temperature gradient on heat flow transmission, evaluates the absorption capacity of the phase change material for steam waste heat, and uses the formula:

[0145]

[0146] Calculate the absorption amount of steam waste heat, identify the change trend of heat storage under the influence of the temperature gradient, and obtain the steam waste heat regulation result;

[0147] Among them, Q eff represents the absorption amount of steam waste heat, m represents the mass of the phase change material, c represents the specific heat capacity of the phase change material, T s represents the steam input temperature, T m represents the real-time temperature of the phase change material, t' represents the heat transfer time, and τ represents the heat delay time;

[0148] Detailed explanation of the formula and the derivation process of formula calculation:

[0149] The mass m is calculated by multiplying the volume V of the phase change material by the density ρ. It is set that the volume of the phase change material is obtained through precise measurement as V = 0.005 cubic meters, and the density of this material is determined by retrieving the standard parameter library as ρ = 800 kilograms per cubic meter. Then the mass is calculated as follows:

[0150] m = V·ρ = 0.005 × 800 = 4;

[0151] The specific heat capacity c reflects the heat required for a unit mass of the material to absorb or release a unit temperature change. By querying the standard database, the specific heat capacity of the phase change material is c = 2.5;

[0152] Steam input temperature T s Measured by a thermocouple temperature measurement device, the monitored data is T s = 120 degrees Celsius, and the current temperature T of the phase change material m Measured by an embedded temperature sensor, the data is T m = 65 degrees Celsius;

[0153] The heat transfer time t is determined by the heat response rate of the phase change material. During the measurement period, the heat response time of this phase change material is recorded as t' = 15 seconds. The heat delay time τ is affected by the thermal conductivity and heat transfer path of the material. The measured value of the heat delay time of this phase change material is τ = 5 seconds;

[0154] Basis for setting the threshold:

[0155] The set steam waste heat absorption threshold is 100 kJ. The basis for setting this value is the average heat absorption per unit time of the phase change material in the stable working state. This threshold is determined through analysis of multiple experimental data. Under the conditions of an ambient temperature of 25, a steam temperature of 120, and a pressure of 0.5 MPa, 10 sets of heat absorption data of the phase change material are taken, and the measured heat absorption values are 95 kJ, 102 kJ, 98 kJ, 101 kJ, 99 kJ, 104 kJ, 97 kJ, 100 kJ, 103 kJ, 96 kJ respectively. Calculate the average value:

[0156]

[0157] Take 99.5 kJ as the reference value and round up to 100 kJ as the heat absorption threshold. If the calculated Q eff is higher than this value, it indicates that the steam heat transfer efficiency meets the standard. If it is lower than this value, the steam input flow rate needs to be optimized or the steam temperature needs to be increased;

[0158] Substitute all parameters into the formula for calculation:

[0159]

[0160] The results show that the phase change material absorbed 123.1 kJ of waste heat from steam within 15 seconds, which is higher than the set threshold of 100 kJ, indicating that the current heat transfer process is efficient and the phase change material still has heat storage capacity. Therefore, there is no need to adjust the way of transferring waste heat from steam. If the calculated value is lower than the set threshold, it is necessary to optimize the steam input flow rate or increase the steam temperature to increase the heat absorption rate of the phase change material and improve the thermal storage stability of the system.

[0161] The change trend analysis sub-module uses the results of waste heat from steam regulation to analyze the change trend of heat storage of the phase change material, evaluate the heat storage capacity of the phase change material under different heat transfer modes, identify the dynamic equilibrium state of heat storage, and obtain the phase change heat storage state.

[0162] It is necessary to analyze the change trend of heat storage of the phase change material and evaluate its heat storage capacity under different heat transfer modes. The heat storage capacity of the phase change material can be measured through data in multiple time periods. During the experiment, different time points can be selected to measure the temperature of the phase change material. Within a 10-minute experimental cycle, the temperature is measured every 1 minute, and its changes are recorded. The initial temperature is set to 50, and the temperatures 52, 55, 58, 62, 65, 67, 69, 71, 72, and 73 are measured in sequence. The temperature increase amplitude in each time period can be calculated. The temperature increased by 15 in the first 5 minutes, and only increased by 8 in the subsequent 5 minutes, indicating that the heat storage rate is decreasing, which is related to the saturation state of the phase change material. When analyzing the heat storage trend, the heat absorption characteristics of the phase change material also need to be combined. If the phase change temperature of a certain material is 60, before reaching 60, its heating rate is relatively fast, and after exceeding 60, since the absorbed heat is used for phase change, its temperature growth rate decreases. If the temperature change range measured within 30 minutes is from 45 to 70, and the main heating stage is concentrated in the first 15 minutes, it can be analyzed that the main heat storage period of this material is concentrated in the first half and tends to be stable in the second half. Combining all the measured data, the phase change heat storage state is obtained.

[0163] Please refer to Figure 5 , the temperature gradient regulation module includes:

[0164] The water temperature change analysis sub-module analyzes the water temperature change of the measuring points in the heating area based on the phase change heat storage state, calculates the change rate of the measuring point water temperature over time, and compares the water temperature difference between adjacent measuring points to obtain the water temperature gradient distribution value.

[0165] A number of measurement points are arranged within the heating area. Each measurement point includes a temperature sensor for acquiring real-time water temperature data. In practical applications, a 10-square-meter hot water storage area is set up, and one temperature sensor is arranged per square meter to form a grid monitoring system. The collected water temperature data is stored in a database at a sampling frequency of seconds. Calculate the water temperature change rate of each measurement point at different time nodes during the phase change heat storage process. If the temperature of a certain measurement point rises from 40 to 60 within 5 minutes, then its change rate is:

[0166] (60 - 40) / 5 = 4;

[0167] To ensure data reliability, the sliding window method is used to calculate the smoothed value of the change rate, reducing the impact of sudden data on the analysis. Filter out the areas where the water temperature change rate exceeds the set threshold. This threshold is set to 3 / min and is calculated based on the standard heating rate in the water flow circulation equipment. This value changes with the heating power and water flow rate. If the heating power is increased by 50%, the threshold is adjusted to 4.5. If the water flow rate is reduced by 30%, the threshold is reduced to 2.1. An example calculation is when the water flow rate is 0.5 m / s and the standard heating power is 5 kW, the corresponding threshold calculation is: (5 × 0.6) = 3;

[0168] Filter out all measurement points with a change rate higher than this value, and record their location information and corresponding timestamps. Compare the water temperature differences between adjacent measurement points. If the temperatures of two adjacent measurement points are 55 and 50 respectively, then the temperature difference is 5. By calculating the temperature differences between different measurement points, a water temperature gradient distribution map is drawn. Calculate the temperature gradient of each measurement point. The first-order finite difference is used to calculate the gradient, that is, gradient = (adjacent measurement point temperature difference) / measurement point spacing. If the measurement point spacing is 0.5 m, then the gradient corresponding to the above temperature difference of 5 is 5 / 0.5 = 10, obtaining the water temperature gradient distribution value.

[0169] The local water flow optimization sub-module calculates the local water flow resistance based on the water temperature gradient distribution value, analyzes the influence of the local flow velocity on the water temperature change, and uses the formula:

[0170]

[0171] Calculate the resistance value of the local area, adjust the water flow channel structure of the semiconductor wafer, and obtain the local water flow optimization result;

[0172] Among them, R i represents the local water flow resistance value, T i+1 and T i represent the water temperatures of adjacent measurement points, V j represents the water flow channel flow velocity, P k represents the measurement point pressure, A k represents the flow cross-sectional area, z and m' are the number of channels j and the number of measurement points k respectively;

[0173] Parameter acquisition and value setting:

[0174] T i+1 and T i (Water temperature at adjacent measurement points): Obtained by monitoring with a water temperature sensor. In actual measurement, the water temperatures of two adjacent measurement points in a certain local area are measured as 58.3 and 55.2 respectively. Then:

[0175] |T i+1 - T i | = |58.3 - 55.2| = 3.1;

[0176] V j (Flow velocity of the jth water flow channel): The flow velocity data of each water flow channel is measured by an ultrasonic flowmeter. There are 5 channels in a certain area, and the measured flow velocities of each channel are 0.42 m / s, 0.38 m / s, 0.45 m / s, 0.40 m / s, and 0.41 m / s respectively. Then the total flow velocity is:

[0177]

[0178] P k (Pressure at the kth measurement point): Data is obtained through a pressure sensor. At 5 measurement points in the same area, the measured pressures are 1025 Pa, 1010 Pa, 1030 Pa, 1005 Pa, and 1020 Pa respectively. Then the total pressure is calculated as follows:

[0179]

[0180] A k (Flow cross-sectional area of the measurement point): The pipe cross-section in this area is 0.6 for all. Then:

[0181]

[0182] Derivation process of formula calculation

[0183] Substitute the above parameters into the formula:

[0184]

[0185] Calculate the first part:

[0186]

[0187] Calculate the second part:

[0188]

[0189] Calculate the local water flow resistance value:

[0190] R i≈1.5049×92.14 = 138.6;

[0191] The result is used to determine whether the water flow resistance in this area exceeds the optimized set value. The set reference value range for resistance optimization is 120 to 150. If the calculated value is higher than 150, the structure of the water flow channel needs to be optimized to reduce the uneven local flow distribution. If the calculated value is lower than 120, it means that the resistance is low, which affects the formation of the overall temperature gradient. Since the current calculated value of 138.6 is within the range, there is no need to adjust the channel structure, and the current flow rate and pressure distribution are maintained.

[0192] The temperature balance evaluation sub-module calls the local water flow optimization result to evaluate the temperature uniformity of the overall heating area, compares the deviation of the overall water temperature distribution, screens the areas where the temperature uniformity deviation exceeds the set range, identifies the change trend of the overall water temperature gradient before and after optimization, and obtains the water temperature gradient adjustment result;

[0193] Evaluate the temperature uniformity of the overall heating area, recalculate the water temperature change rate at each measurement point, and draw the water temperature gradient distribution curves before and after optimization. Set the maximum water temperature gradient before optimization to 12 / m, which is reduced to 8 / m after optimization. Compare the deviation of the overall water temperature distribution, calculate the variance of the temperature distribution within the area. Set the average temperature of different measurement points before optimization to 55, and the standard deviation to 4.5. The average value remains 55 after optimization, but the standard deviation is reduced to 2.8. Screen the areas where the temperature uniformity deviation exceeds the set range threshold, which is set to 3. According to the standard of water temperature fluctuation uniformity measured by experiments, this value changes with the water flow stability and the regional expansion range. If the water flow rate decreases by 20%, the threshold needs to be increased to 3.6. If the monitored area increases by 50%, the threshold is adjusted to 4.2. The example calculation is that when the flow rate is 0.4m / s and the standard area size is 10㎡, the corresponding threshold calculation is:

[0194] (3×1.2) = 3.6;

[0195] Calculate the change trend of the overall water temperature gradient before and after optimization. By calculating the standard deviation of the temperature gradient, the standard deviation decreases after optimization, indicating that the temperature uniformity has improved, and the water temperature gradient adjustment result is obtained.

[0196] Please refer to Figure 6 , the waste heat energy recovery module includes:

[0197] Based on the water temperature gradient adjustment result, the steam waste heat monitoring sub-module monitors the steam waste heat of the semiconductor wafer discharge pipeline, obtains the steam temperature and flow rate data at different time points in the discharge pipeline, calculates the steam energy per unit time, screens the moments when the steam energy fluctuation exceeds the set threshold, and calculates the total waste heat in the differential time period to obtain the total waste heat energy value;

[0198] Monitor the waste heat of the steam in the semiconductor wafer emission pipeline, call the temperature sensor to collect the steam temperature data, record the temperature change within the time interval, and at the same time measure the flow rate of the steam in the emission pipeline. Use a flow meter to measure the volume flow rate of the steam passing through the cross-section, and convert the mass flow rate according to the density of the steam. Compare the data changes in different time periods, and screen out the time periods with a relatively large temperature change rate. For the screened time periods, calculate the steam energy per unit time, and use the specific heat capacity formula to calculate the heat carried by the steam, that is, calculate the energy transfer amount of the steam per unit time based on the steam temperature, specific heat capacity and mass flow rate. Further divide the pipeline area, and count the total waste heat in different time periods and different pipeline areas. The screening criterion for a large temperature change rate is set as the temperature change rate exceeding 5. This value is statistically obtained based on the measured temperature fluctuation range in the semiconductor wafer steam emission system. Under the steady-state emission condition, the temperature change rate is below 2 / min. Therefore, 5 is set as the high fluctuation threshold. If it exceeds this value, it is determined that the waste heat fluctuation in this time period is relatively large, and the total waste heat energy value is calculated by summarization.

[0199] The waste heat recovery path determination sub-module uses the total waste heat energy value, and refers to the pipeline transmission characteristics of waste heat recovery, monitors the change of the pressure gradient during the waste heat flow process, and uses the formula:

[0200]

[0201] Calculate the recoverable waste heat quantity, judge whether the waste heat recovery path is unobstructed, and obtain the recovery path analysis result;

[0202] Among them, Q r represents the recoverable waste heat quantity, T in and T out respectively represent the temperatures of the steam entering and leaving the pipeline, M represents the steam mass flow rate per unit time, P avg represents the average pressure in the waste heat recovery path, L represents the pipeline length, and V' represents the steam flow rate;

[0203] The acquisition method and calculation process of the parameters:

[0204] The steam temperature T in entering the heat exchange equipment is measured by a high-precision temperature sensor, and the measurement point is set at the inlet position of the heat exchange equipment. The recorded value of the steam temperature is 180, and the discharge temperature T out is collected at the outlet position of the heat exchange equipment, and the recorded value is 100. Therefore:

[0205] |T in -T out | = |180 - 100| = 80;

[0206] The steam mass flow rate M is measured by a mass flow meter. The measurement period is set to 10 minutes and the average value is taken. The measured value is 2.5. Therefore:

[0207] 80 × 2.5 = 200;

[0208] The average pressure P of the waste heat recovery path avg It is obtained by arranging pressure sensors at different points on the pipeline and calculating the average value. When the recovery equipment operates stably, the measured average pressure is 3.5. Therefore:

[0209]

[0210] The pipeline length L is determined by the structural parameters of the waste heat recovery equipment and is measured by a rangefinder. The actual length is 15 m. The steam flow velocity V' is measured by a flowmeter, and the data acquisition frequency is once per second. The calculated average value is 12 m / s. Therefore:

[0211]

[0212] Substitute into the formula for calculation:

[0213]

[0214] The result shows that the recoverable amount of waste heat Q r is approximately 64.1, which means that under the current steam flow velocity, pipeline length, heat exchange equipment outlet temperature and pressure conditions, the total amount of waste heat that can be recovered per second is 64.1. This value determines the recovery capacity of the heat exchange equipment and can be used for subsequent evaluation of waste heat conversion efficiency.

[0215] The waste heat recovery efficiency evaluation sub-module calls the analysis results of the recovery path, adjusts the waste heat transfer flow rate to match the recovery capacity of the heat exchange equipment, evaluates the waste heat conversion efficiency and availability, compares the real-time recovered heat with the recoverable heat, and obtains the control result of pure water waste heat recovery;

[0216] Adjust the waste heat transfer flow rate to match the recovery capacity of the heat exchange equipment, obtain the maximum heat exchange capacity of the waste heat recovery equipment, calculate the heat exchange capacity range through the rated power of the heat exchanger, measure the actual input steam flow rate and temperature, and compare their matching with the heat exchange capacity. If the actual steam input exceeds the heat exchange capacity, adjust the steam input flow rate to maintain it within the rated heat exchange range of the equipment. At the same time, calculate the waste heat conversion efficiency, calculate the waste heat recovery rate based on the heat comparison between the input steam and the output condensate water, compare the calculated waste heat recovery rate with the theoretical heat exchange capacity of the heat exchange equipment, analyze the deviation of the recovery efficiency, and calculate the degree of waste heat availability. The rated power of the heat exchange equipment is set at 500 kW, and this power value is determined based on the measured data of the maximum heat exchange capacity of the heat exchange equipment. During the test, when the input steam power exceeds 500 kW, the heat exchange efficiency begins to decline and heat energy waste increases. Therefore, this power value is set as the rated power reference value of the heat exchange equipment. If the input steam power exceeds 500 kW, the steam flow rate needs to be adjusted to maintain it within the optimal operating range of the heat exchange equipment, and the pure water waste heat recovery control result is obtained.

[0217] The above are only the preferred embodiments of the present invention and do not limit the present invention in other forms. Any person skilled in the art may use the technical content disclosed above to make changes or modifications into equivalent embodiments with equivalent changes and apply them to other fields. However, as long as it does not depart from the technical solution content of the present invention, any simple modification, equivalent change, and modification made to the above embodiments based on the technical essence of the present invention still fall within the protection scope of the technical solution of the present invention.

Claims

1. A semiconductor wafer energy-saving pure water heating control system, characterized in that: The system comprises: The water flow characteristic identification module identifies the water flow velocity, water flow direction, and water flow resistance based on the hydrodynamic data of the target area of ​​the semiconductor wafer, records the water flow temperature changes in multiple areas, evaluates the impact of water flow velocity on water temperature changes, analyzes the heat transfer path according to the distribution of water flow resistance, calculates the overall heat transfer rate, and obtains the hydrodynamic transfer results; The heat transfer optimization module identifies the pure water flow of the semiconductor wafer through the hydrodynamic transfer result, evaluates the degree of adaptation between the water flow heat transfer rate and the heating power, adjusts the power output of the pure water heating of the semiconductor wafer, and obtains the heat transfer control result; The intelligent phase change material management module uses the heat transfer control result to monitor the temperature state of the semiconductor wafer phase change material, obtain the steam waste heat input temperature, identify the change of the phase change material absorbing heat, adjust the transmission mode of the steam waste heat, analyze the phase change material heat storage change trend, and obtain the phase change heat storage state; The temperature gradient control module analyzes the temperature change in the heating area based on the phase change heat storage state, identifies the local water temperature change, evaluates the overall temperature balance state, and obtains the water temperature gradient adjustment result.

2. A semiconductor wafer energy-saving pure water heating control system according to claim 1, characterized in that: The hydrodynamic transfer results include the hydrodynamic balance state, heat transfer path distribution, and overall heat transfer rate; the heat transfer regulation results include the power output matching degree, local heat uniformity, and water flow thermal adaptability; the phase change heat storage state includes heat storage capacity, heat absorption change trend, and waste heat transfer mode; the water temperature gradient adjustment results include temperature gradient uniformity, local temperature stability, and overall temperature balance.

3. A semiconductor wafer energy-saving pure water heating control system according to claim 1, characterized in that: The water flow characteristic recognition module comprises: The hydrodynamic data acquisition submodule acquires hydrodynamic data of the target area of ​​the semiconductor wafer, detects water flow velocity, water flow direction and water flow resistance, records the change of water flow velocity, flow direction deviation angle and force per unit area in multiple areas, identifies the spatial distribution of water flow resistance, calculates water kinetic energy with reference to hydrodynamic characteristics, and acquires water flow dynamic distribution data; The water flow temperature identification and analysis submodule is based on the water flow dynamic distribution data, calls the water flow velocity and resistance data of multiple regions, calculates the heat exchange amount of water flowing through multiple regions, and detects the change range of water flow temperature under differentiated flow rates, using the formula: Evaluate the effect of water velocity on temperature change, identify heat transfer trends based on velocity gradients in differentiated areas, and calculate the change in water temperature; Where ΔT represents the change in water flow temperature, m i represents the water flow quality in the ith region, c i represents the specific heat capacity of water in the ith region, v i represents the water flow velocity in the ith region, Δt i represents the water flow time of the ith region, and n represents the total number of regions; The transfer analysis submodule evaluates the influence of water flow resistance on the heat transfer path based on the water flow temperature change, analyzes the heat flow transfer direction and power loss distribution, evaluates the fluid dynamic equilibrium state, calculates the overall heat transfer rate, and obtains the hydrodynamic transfer results.

4. A semiconductor wafer energy-saving pure water heating control system according to claim 3, characterized in that: The heat transfer optimization module includes: The flow characteristic identification submodule detects the water flow velocity distribution, flow direction offset and local resistance change in the pure water flow channel of the semiconductor wafer based on the hydrodynamic transfer result, identifies the momentum difference of the water flow in the differentiated area, analyzes the influence of the water flow state on the heat transfer, and obtains the water flow characteristic data; The heating power matching submodule uses the water flow characteristic data to calculate the water flow heat transfer rate, detect the water flow heating capacity in the differentiated area, and evaluate the matching degree between the water flow heat transfer rate and the heating power, using the formula: Calculate the water flow heat transfer deviation value and combine it with the heating power distribution to obtain the power adaptation adjustment result; Where AB represents the water flow heat transfer deviation, Q i represents the heat absorbed by the water flow in the i-th region, P' i represents the heating power of the ith zone, t i represents the heating time of the ith zone, and n represents the total number of zones; The power output control submodule adopts the power adaptation adjustment result to adjust the power output of pure water heating of the semiconductor wafer, optimize the local heating distribution uniformity, evaluate the overall heating stability, and obtain the heat transfer control result.

5. A semiconductor wafer energy-saving pure water heating control system according to claim 4, characterized in that: The intelligent phase change material management module comprises: The phase change temperature monitoring submodule monitors the temperature state of the semiconductor wafer phase change material based on the heat transfer control result, detects the temperature distribution and time change of the phase change material, analyzes the influence of temperature difference in differentiated areas on heat absorption, identifies the temperature change trend, and obtains phase change temperature monitoring data; The steam waste heat control submodule obtains the steam waste heat input temperature through the phase change temperature monitoring data, calculates the heat absorption rate of the phase change material, analyzes the influence of the temperature gradient on the heat flow transmission, and evaluates the absorption capacity of the phase change material for steam waste heat, using the formula: Calculate the amount of steam waste heat absorbed, identify the trend of heat storage changes under the influence of temperature gradient, and obtain the steam waste heat control results; Among them, Q eff represents the amount of steam waste heat absorbed, m represents the mass of the phase change material, c represents the specific heat capacity of the phase change material, T s represents the steam input temperature, T m represents the real-time temperature of the phase change material, t' represents the heat transfer time, and τ represents the heat delay time; The change trend analysis submodule uses the steam waste heat control result to analyze the heat storage change trend of the phase change material, evaluate the heat storage capacity of the phase change material under the differentiated heat transfer mode, identify the dynamic equilibrium state of heat storage, and obtain the phase change heat storage state.

6. A semiconductor wafer energy-saving pure water heating control system according to claim 5, characterized in that: The temperature gradient control module comprises: The water temperature change analysis submodule analyzes the water temperature change of the measuring points in the heating area based on the phase change heat storage state, calculates the rate of change of the water temperature of the measuring points over time, compares the water temperature difference of adjacent measuring points, and obtains the water temperature gradient distribution value; The local water flow optimization submodule calculates the local water flow resistance based on the water temperature gradient distribution value and analyzes the influence of the local flow velocity on the water temperature change using the formula: Calculate the resistance value of the local area, adjust the water flow channel structure of the semiconductor wafer, and obtain the local water flow optimization result; Among them, R i Represents the local water flow resistance value, T i+1 and T i Represents the water temperature at adjacent measuring points, V j represents the flow velocity of the water channel, P k Represents the pressure at the measuring point, A k represents the flow cross-sectional area, z and m' are the number of channels j and the number of measuring points k, respectively; The temperature balance evaluation submodule calls the local water flow optimization results, evaluates the temperature uniformity of the overall heating area, compares the overall water temperature distribution deviation, screens the areas where the temperature uniformity deviation exceeds the set range, identifies the overall water temperature gradient change trend before and after optimization, and obtains the water temperature gradient adjustment result.

7. A semiconductor wafer energy-saving pure water heating control system according to claim 1, characterized in that: The system also includes a waste heat energy recovery module: The waste heat energy recovery module calls the water temperature gradient adjustment result, monitors the steam waste heat of the semiconductor wafer discharge pipeline, calculates the recoverable amount of waste heat, determines whether the waste heat energy recovery path is unobstructed, adjusts the waste heat transmission flow to match the recovery capacity of the heat exchange equipment, evaluates the waste heat conversion efficiency and availability, and obtains the pure water waste heat recovery control result; The pure water waste heat recovery control results include waste heat recovery potential, heat exchange equipment adaptability, and waste heat conversion efficiency.

8. A semiconductor wafer energy-saving pure water heating control system according to claim 7, characterized in that: The waste heat energy recovery module comprises: The steam waste heat monitoring submodule monitors the steam waste heat of the semiconductor wafer discharge pipeline based on the water temperature gradient adjustment result, obtains the steam temperature and flow rate data at differentiated time points in the discharge pipeline, calculates the steam energy per unit time, screens the moment when the steam energy fluctuation exceeds the set threshold, calculates the total waste heat in the differentiated time period, and obtains the total waste heat energy value; The waste heat recovery path determination submodule uses the total waste heat energy value, refers to the pipeline transmission characteristics of waste heat recovery, monitors the change of pressure gradient during the waste heat flow process, and uses the formula: Calculate the recoverable waste heat, determine whether the waste heat recovery path is unobstructed, and obtain the recovery path analysis results; Among them, Q r Represents the recoverable waste heat, T in and T out Represent the temperatures of steam entering and exiting the pipes, M represents the steam mass flow rate per unit time, P avg represents the average pressure in the waste heat recovery path, L represents the length of the pipeline, and V' represents the steam flow rate; The waste heat recovery efficiency evaluation submodule calls the recovery path analysis results, adjusts the waste heat transmission flow to match the recovery capacity of the heat exchange equipment, evaluates the waste heat conversion efficiency and availability, compares the real-time recovered heat and the recoverable heat, and obtains the pure water waste heat recovery control results.

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