Perovskite cell laser scribing path planning method

Abstract

The embodiment of the invention provides a perovskite cell laser scribing path planning method, and the method comprises the steps: carrying out the grid division of a perovskite cell, carrying out the natural feature marking of each grid, and enabling the natural features to comprise the thin film thickness d, the doping concentration c, and the crystal type ty; constructing a laser energy absorption model of the grid; performing path search based on an improved multi-target A * search algorithm to obtain a first path; optimizing the first path based on the temperature of the perovskite battery to obtain a second path; the second path is subjected to secondary smoothing processing, a third path is obtained, and the third path is the path for laser scribing. According to the method, the optimal path can be planned according to the natural characteristics of the perovskite battery, the laser scribing efficiency is improved, and damage to the perovskite battery caused by laser is reduced.

Description

Technical Field

[0001] The present application relates to the field of laser scribing, and in particular to a method for planning a laser scribing path of a perovskite battery, a control device, and a computer program product. Background Art

[0002] As a new energy battery, the perovskite battery has broad application prospects. Laser scribing is an important link in its production. Through precise laser scribing, a large-area perovskite thin film material can be divided into independent battery units, realizing modular production of the battery and ensuring that each unit can work efficiently and stably. In the prior art, there are few path planning for the laser scribing of perovskite batteries, and the natural characteristics of perovskite batteries are not considered in the path planning, resulting in low efficiency of laser scribing of perovskite batteries and even affecting the performance of their finished products.

[0003] Therefore, how to provide a method for planning a laser scribing path of a perovskite battery has become an urgent problem to be solved. Summary of the Invention

[0004] The present application provides a method for planning a laser scribing path of a perovskite battery, a control device, and a computer program product. The method can plan the optimal path according to the natural characteristics of the perovskite battery, improve the laser scribing efficiency, and reduce the damage caused by the laser to the perovskite battery.

[0005] In a first aspect, a method for planning a laser scribing path of a perovskite battery is provided. The method includes:

[0006] S1: Divide the perovskite battery into grids, and label the natural characteristics of each grid. The natural characteristics include: film thickness d, doping concentration c, and crystal type t y ;

[0007] S2: Construct a laser energy absorption model for the grid;

[0008] S3: Perform path search based on an improved multi-objective A* search algorithm to obtain a first path. The improvement measures include: a node expansion strategy based on feature differences and local optimization based on smoothness;

[0009] S4: Optimize the first path based on the temperature of the perovskite battery to obtain a second path;

[0010] S5: Perform secondary smoothing processing on the second path to obtain a third path, and the third path is the path of laser scribing.

[0011] When planning the laser scribing path, the method considers the natural characteristics (film thickness d, doping concentration c, and crystal type t) that have a greater impact on the perovskite battery y) By using the improved multi-objective A* search algorithm to balance feature differences and path smoothness to obtain the initial path, optimizing the path based on the battery temperature can avoid the negative impact of the thermal effect, and the secondary smoothing process further improves the path quality, so that the planned laser scribing path can minimize the adverse impact on the performance of perovskite batteries to the greatest extent and improve the laser scribing efficiency.

[0012] It should be understood that the film thickness d, doping concentration c, and crystal type t y These three natural characteristics have a significant impact on the laser scribing of perovskite batteries. Different film thicknesses d have different absorption, penetration, and thermal effects on laser energy. Too thin may cause excessive laser penetration and damage the underlying structure, while too thick may absorb too much heat and easily cause thermal stress problems; the doping concentration c affects the electrical properties of the material, thereby changing the generation and transmission of carriers under the action of the laser, affecting the electrical characteristics of the scribed area and its electrical compatibility with the surrounding area; the crystal type t y Determines the atomic arrangement and electronic structure inside the material, resulting in different optical responses to the laser, affecting the absorption and scattering methods of laser energy, and ultimately affecting the accuracy and quality of laser scribing and the overall impact on the subsequent performance of the battery. Therefore, when planning the laser scribing path in this application, taking these three natural characteristics into consideration can make the planned path more in line with the natural characteristics of perovskite batteries.

[0013] Combined with the first aspect, in some implementation manners of the first aspect, the laser energy absorption formula of the grid is:

[0014] E i = P·t·X,

[0015] where, E i is the laser energy absorbed by the current grid, P is the laser power, t is the action time of the laser on the grid, X is the grid laser energy absorption coefficient, and the grid laser energy absorption coefficient X is related to the film thickness d, doping concentration c, and crystal type t y is related.

[0016] It should be understood that after the perovskite battery is divided into grids, due to the different physical characteristics of each grid, there are also differences in the absorption of laser energy. Based on the natural characteristics of the grid, this application constructs a model for the absorption of laser energy by the grid. This model can more accurately reflect the absorption of laser energy by different grids, thereby providing a scientific and effective basis for the planning of the laser scribing path and making the planned path more in line with the actual needs.

[0017] Combined with the first aspect, in some implementation manners of the first aspect, the node expansion strategy based on feature differences includes:

[0018] S311: Initialize the node set. The node set is an empty set when initialized and is used to accommodate the expanded nodes;

[0019] S312: Calculate the value of the path node and add the path node to the node set. The calculation formula of the path node is:

[0020] f(n) = ω 1 ·g(n) + ω 2 ·h(n) + ω 3 ·e(n) + ω 4 ·p(n),

[0021] where g(n) is the actual cost from the start node to the current node, h(n) is the heuristic cost from the current node to the target node, e(n) is the cumulative laser energy absorbed from the start point to the current node, p(n) is the evaluation index for the performance of the perovskite battery, and ω i (i = 1, 2, 3, 4) are weight coefficients;

[0022] S313: When the number of path nodes in the node set exceeds N (N > 2), adjust the path nodes based on the feature difference. The calculation formula of the feature difference ΔC of the path node is:

[0023]

[0024] where α i (i = 1, 2, 3) are weight coefficients, d n , c n and are the film thickness, doping concentration, and crystal type of the current node, and d n-1 , c n-1 and are the film thickness, doping concentration, and crystal type of the adjacent node;

[0025] S314: Set the first threshold. If the specificity difference exceeds the first threshold, then adjust the path node.

[0026] Combined with the first aspect, in some implementation manners of the first aspect, the local optimization strategy based on smoothness includes:

[0027] S321: Calculate the included angle θ i , θ i of the adjacent nodes in the node set. The calculation formula is:

[0028]

[0029] where p i-1 , p i , p i+1 are three adjacent nodes;

[0030] S322: Calculate the smoothness s(n) according to the included angle θ i The formula for calculating the smoothness s(n) is:

[0031]

[0032] where m is the number of nodes in the node set, and m > 2

[0033] S323: Set a second threshold. If the smoothness s(n) exceeds the first threshold, the path nodes will be adjusted;

[0034] S324: The path formed by the path nodes in the node set after being adjusted by Claims 2 and 3 is the first path.

[0035] In combination with the first aspect, in some implementation manners of the first aspect, step S4 includes:

[0036] S401: Calculate the temperature T of each path node in the node set i , and the calculation formula is:

[0037]

[0038] where E i is the laser energy absorbed by the grid where the current path node is located, C p is the specific heat capacity of the perovskite material, ρ is the material density, and V is the material volume of the grid;

[0039] S402: Set a third threshold, compare T i with the third threshold. If T i is higher than the third threshold, the path node corresponding to T i will be adjusted;

[0040] S403: Traverse each path node in the node set and perform operations S401 and S402 on each path node;

[0041] S404: The path formed by the path nodes in the adjusted node set is the second path.

[0042] It should be understood that the temperature of the perovskite battery will rise after absorbing laser energy. This should be taken into account when planning the laser scribing path to avoid the temperature of the planned path being too high and causing damage to the perovskite battery.

[0043] In combination with the first aspect, in some implementation manners of the first aspect, step S5 includes:

[0044] S501: Divide the second path into multiple path segments, and the path segments include at least 3 adjacent path nodes;

[0045] S502: For each path segment, select 3 adjacent path nodes and perform quadratic smoothing on them using the quadratic Bézier curve formula:

[0046] B(t) = (1 - t) 2 P i-1 + 2(1 - t)p i + t 2 P i+1 ,

[0047] where 0 ≤ t ≤ 1;

[0048] S503: Change t at a certain step size to calculate the path nodes on the path segment until the set smoothness requirement is met;

[0049] S504: Perform a global check on the second path to ensure the overall smoothness of the path, and obtain the third path, which is the path for laser scribing.

[0050] It should be understood that through quadratic smoothing, the remaining small twists and unevenness in the path can be further eliminated. This not only helps the laser to output energy more stably during the scribing process, avoiding energy fluctuations caused by path mutations, but also makes the movement of the laser scribing device smoother, reducing unnecessary acceleration and deceleration operations, thereby significantly reducing the operation pause and adjustment time caused by the unsmooth path, and thus greatly improving the operation efficiency of laser scribing.

[0051] In a second aspect, the present application provides a control device, which includes a processor and a memory. The processor is coupled to the memory. The memory is used to store computer programs or instructions, and the processor is used to execute the computer programs or instructions in the memory, so that the method in any one of the first aspects is executed.

[0052] In a third aspect, the present application provides a computer program product, which stores programs or instructions. When the programs or instructions are run, the method in any one of the first aspects is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 is a schematic flowchart of the implementation of a method for planning a laser scribing path of a perovskite battery provided by an embodiment of the present application.

[0054] Figure 2 is a schematic flowchart of the implementation of a node expansion strategy based on feature differences provided by an embodiment of the present application.

[0055] Figure 3 is a schematic flowchart of the implementation of a local optimization strategy based on smoothness provided by an embodiment of the present application.

[0056] Figure 4 It is a schematic diagram of the implementation process of a path optimization strategy based on the temperature of a perovskite battery provided by an embodiment of the present application.

[0057] Figure 5 It is a schematic diagram of the implementation process of a path secondary smoothing processing method provided by an embodiment of the present application.

[0058] Figure 6 It is a schematic diagram of the structure of a control device provided by an embodiment of the present application. Specific implementation manners

[0059] The terms used in the following embodiments are only for the purpose of describing specific embodiments and are not intended to limit the present application. As used in the specification and appended claims of the present application, the singular forms "a", "an", "", "the above", "the" and "this" are also intended to include, for example, the expression "one or more", unless the context clearly indicates otherwise. It should also be understood that in the following embodiments of the present application, "at least one" and "one or more" mean one, two or more than two. The term "and / or" is used to describe the association relationship of associated objects and indicates that three relationships can exist; for example, A and / or B can mean: A exists alone, A and B exist simultaneously, and B exists alone, where A and B can be singular or plural. The character " / " generally represents an "or" relationship between the associated objects before and after.

[0060] The reference to "an embodiment" or "some embodiments" etc. described in this specification means that a specific feature, structure or characteristic described in combination with the embodiment is included in one or more embodiments of the present application. Thus, the statements "in an embodiment", "in some embodiments", "in other some embodiments", "in still other embodiments" etc. that appear in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "comprising", "including", "having" and their variants all mean "including but not limited to", unless otherwise specifically emphasized in other ways.

[0061] With the continuous development of new energy technologies, perovskite batteries are gradually emerging in the energy field with their unique advantages and becoming a highly potential emerging force. In the manufacturing of perovskite batteries, laser scribing is an important link in their production. Through precise laser scribing, large-area perovskite thin-film materials can be divided into independent battery units, realizing the modular production of batteries and ensuring that each unit can work efficiently and stably. Therefore, the path planning of laser scribing is particularly crucial, which directly relates to the performance, production efficiency and manufacturing cost of the batteries.

[0062] An embodiment of the present application provides a method for planning a laser scribing path of a perovskite battery, a control device, and a computer program product, which can plan the most suitable laser scribing path based on the natural characteristics of the perovskite battery and improve the operation efficiency. The technical solutions of the embodiments of the present application will be described below with reference to the accompanying drawings.

[0063] Reference Figure 1 , in some examples, the method includes:

[0064] S1: Divide the perovskite battery into grids, and label the natural characteristics of each grid. The natural characteristics include: film thickness d, doping concentration c, and crystal type t y ;

[0065] S2: Construct a laser energy absorption model for the grid;

[0066] S3: Perform path search based on the improved multi-objective A* search algorithm to obtain the first path. The improvement measures include: a node expansion strategy based on feature differences and local optimization based on smoothness;

[0067] S4: Optimize the first path based on the temperature of the perovskite battery to obtain the second path;

[0068] S5: Perform secondary smoothing processing on the second path to obtain the third path, and the third path is the laser scribing path.

[0069] When planning the laser scribing path, this method considers the natural characteristics that have a greater impact on the perovskite battery, uses the improved multi-objective A* search algorithm to take into account both feature differences and path smoothness to obtain the initial path, optimizes the path based on the battery temperature to avoid the negative impact of thermal effects, and the secondary smoothing processing further improves the path quality, so that the planned laser scribing path can minimize the adverse impact on the performance of the perovskite battery and improve the laser scribing efficiency.

[0070] In some examples, the laser energy absorption formula for the grid is:

[0071] E i =P·t·X,

[0072] where E i is the laser energy absorbed by the current grid, P is the laser power, t is the action time of the laser in the grid, X is the grid laser energy absorption coefficient, and the grid laser energy absorption coefficient X is related to the film thickness d, doping concentration c, and crystal type t y related.

[0073] In a possible implementation manner, the calculation method of the grid laser energy absorption coefficient X is: Through a large number of experiments, collect different film thicknesses d, doping concentrations c, crystal types ty Laser energy absorption data under combination. Based on these data, a multiple linear regression equation is constructed:

[0074] X = ad + bc + ct y + d 0 ,

[0075] Solve for the regression coefficients a, b, c, d 0 Then X can be obtained, and the method for solving the regression coefficients in the embodiments of this application is not limited.

[0076] Refer to Figure 2 , in some examples, the node expansion strategy based on feature differences includes:

[0077] S311: Initialize the node set. The node set is an empty set when initialized, and the node set is used to accommodate the expanded nodes;

[0078] S312: Calculate the value of the path node and add the path node to the node set. The calculation formula for the path node is:

[0079] f(n) = ω 1 ·g(n) + ω 2 ·h(n) + ω 3 ·e(n) + ω 4 ·p(n),

[0080] where g(n) is the actual cost from the starting node to the current node, h(n) is the heuristic cost from the current node to the target node, e(n) is the cumulative absorbed laser energy from the starting point to the current node, p(n) is the evaluation index for the performance of the perovskite battery, and ω i (i = 1, 2, 3, 4) are weight coefficients;

[0081] S313: When the number of path nodes in the node set exceeds N (N > 2), adjust the path nodes based on the feature difference ΔC. The calculation formula for the feature difference ΔC of the path node is:

[0082]

[0083] where α i (i = 1, 2, 3) are weight coefficients, d n , c n and are the film thickness, doping concentration, and crystal type of the current node, d n-1 , c n-1 and are the film thickness, doping concentration, and crystal type of the adjacent node;

[0084] S314: Set the first threshold. If the specific difference exceeds the first threshold, then adjust the path node.

[0085] In a possible implementation, the calculation method of h(n) adopts the Manhattan distance method. Assume that the coordinates of the current node n are (n x , n y ), and the coordinates of the target node are (goal x , goal y ), then h(n) = |n x - goal x | + |n y - goal y |. This calculation method is simple and intuitive, and can quickly estimate the cost from the current node to the target node, providing heuristic guidance for path search.

[0086] In a possible implementation, the adjustment method of the path node in step S314 is to add an additional penalty cost Δf to the adjacent node, and the calculation formula of Δf is:

[0087] Δf = k(ΔC - A),

[0088] where k is the penalty coefficient (k > 0), and A is the first threshold.

[0089] Refer to Figure 3 , in some examples, the local optimization strategy based on smoothness includes:

[0090] S321: Calculate the included angle θ i of adjacent nodes in the node set, and the calculation formula of θ i is:

[0091]

[0092] where p i-1 , p i , p i+1 are three adjacent nodes;

[0093] S322: Calculate the smoothness s(n) according to the included angle θ i , and the calculation formula of the smoothness s(n) is:

[0094]

[0095] where m is the number of nodes in the node set, m > 2

[0096] S323: Set the second threshold. If the smoothness s(n) exceeds the first threshold, then adjust the path node;

[0097] S324: The path formed by the path nodes in the adjusted node set is the first path.

[0098] In a possible implementation, the adjustment method of the path nodes in step S323 is: moving the path nodes to be adjusted in the direction that makes the path smooth.

[0099] Reference Figure 4 , in some examples, the path optimization strategy based on the temperature of the perovskite battery includes:

[0100] S401: Calculate the temperature T of each path node in the node set i , and the calculation formula is:

[0101]

[0102] where E i is the laser energy absorbed by the grid where the current path node is located, C p is the specific heat capacity of the perovskite material, ρ is the material density, and V is the material volume of the grid;

[0103] S402: Set a third threshold, compare T i with the third threshold. If T i is higher than the third threshold, then adjust the path node corresponding to T i ;

[0104] S403: Traverse each path node in the node set and perform operations S401 and S402 on each path node;

[0105] S404: The path formed by the path nodes in the adjusted node set is the second path.

[0106] In a possible implementation, the adjustment method of the path nodes in step S402 is: moving the path nodes to be adjusted away from the high-temperature area.

[0107] Reference Figure 5 , in some examples, the path secondary smoothing method includes:

[0108] S501: Divide the second path into multiple path segments, and the path segments include at least 3 adjacent path nodes;

[0109] S502: For each path segment, select 3 adjacent path nodes and perform secondary smoothing processing on them using the quadratic Bezier curve formula. The quadratic Bezier curve formula is:

[0110] B(t)=(1 - t) 2 P i-1 +2(1 - t)p i +t2 P i+1 ,

[0111] where 0 ≤ t ≤ 1;

[0112] S503: Change t in a certain step size to calculate the path nodes on the path segment until the set smoothness requirement is met;

[0113] S504: Perform a global check on the second path to ensure the overall smoothness of the path, and obtain a third path, which is the path of the laser scribing.

[0114] Reference Figure 6 , an embodiment of the present application provides a control device, which includes a processor and a memory. The processor is coupled to the memory. The memory is used to store computer programs or instructions, and the processor is used to execute the computer programs or instructions in the memory, so that as Figures 1 to 5 any one of the methods in

[0115] is executed. Figures 1 to 5 An embodiment of the present application also provides a computer program product, which includes a computer program. When the computer program is run, it causes the computer to execute the method shown in the above

[0116] The above is only the preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiment. Any equivalent modification or change made by those of ordinary skill in the art according to the disclosure of the present invention shall be included in the protection scope recorded in the claims.

Claims

1. A perovskite cell laser scribing path planning method, characterized in that: include: S1: Divide the perovskite cell into grids and annotate each grid with natural features, wherein the natural features include: film thickness d, doping concentration c and crystal type t y ; S2: constructing a laser energy absorption model of the grid; S3: Perform path search based on the improved multi-objective A* search algorithm to obtain the first path. The improvement measures include: node expansion strategy based on feature difference and local optimization based on smoothness; S4: Optimizing the first path based on the temperature of the perovskite battery to obtain a second path; S5: performing secondary smoothing processing on the second path to obtain a third path, where the third path is the laser-marked path.

2. The method according to claim 1, characterized in that The laser energy absorption formula of the grid is: E i =P·t·X, Among them, E i is the laser energy absorbed by the current grid, P is the laser power, t is the action time of the laser on the grid, X is the grid laser energy absorption coefficient, and the grid laser energy absorption coefficient X is related to the film thickness d, doping concentration c and crystal type t y Related.

3. The method according to claim 1, characterized in that The node expansion strategy based on feature differences includes: S311: Initialize a node set, where the node set is an empty set when initialized, and the node set is used to accommodate expanded nodes; S312: Calculate the value of the path node and add the path node to the node set. The calculation formula of the path node is: f(n)=ω1·g(n)+ω2·h(n)+ω3·e(n)+ω4·p(n), Among them, g(n) is the actual cost from the starting node to the current node, h(n) is the heuristic cost from the current node to the target node, e(n) is the cumulative absorbed laser energy from the starting point to the current node, p(n) is the evaluation index of the impact on the performance of the perovskite battery, ω i (i=1, 2, 3, 4) is the weight coefficient; S313: When the number of the path nodes in the node set exceeds N (N>2), the path nodes are adjusted based on feature differences. The calculation formula of the feature difference ΔC of the path nodes is: Among them, α i (i=1,2,3) is the weight coefficient, d n 、c n and is the film thickness, doping concentration and crystal type of the current node, d n-1 、c n-1 and is the film thickness, doping concentration, and crystal type of the adjacent nodes; S314: Setting a first threshold. If the specificity difference exceeds the first threshold, the path node will be adjusted.

4. The method according to claim 1, characterized in that: The smoothness-based local optimization strategy includes: S321: Calculate the angle θ between adjacent nodes in the node set i ,θ i The calculation formula is: Among them, p i-1 ,p i ,p i+1 are three of the adjacent nodes; S322: According to the angle θ i The smoothness s(n) is calculated, and the calculation formula of the smoothness s(n) is: Where m is the number of nodes in the node set, m>2 S323: setting a second threshold, if the smoothness s(n) exceeds the first threshold, adjusting the path node; S324: The path formed by the path nodes in the adjusted node set is the first path.

5. The method according to claim 1, characterized in that The step S4 comprises: S401: Calculate the temperature T of each path node in the node set i , the calculation formula is: Among them, E i is the laser energy absorbed by the grid where the current path node is located, C p is the specific heat capacity of the perovskite material, ρ is the material density, and V is the material volume of the grid; S402: Setting a third threshold, comparing T i With the third threshold, if T i is higher than the third threshold, then T i The corresponding path nodes are adjusted; S403: traverse each of the path nodes in the node set, and perform S401 and S402 operations on each of the path nodes; S404: The path formed by the path nodes in the adjusted node set is the second path.

6. The method according to claim 1, characterized in that The step S5 comprises: S501: Divide the second path into a plurality of path segments, each of which includes at least three adjacent path nodes; S502: For each path segment, select three adjacent path nodes and perform secondary smoothing on them using a quadratic Bezier curve formula, where the quadratic Bezier curve formula is: B(t)=(1-t) 2 P i-1 +2(1-t)p i +t 2 P i+1 , Among them, 0≤t≤1; S503: Calculating the path nodes on the path segment by changing t with a certain step length until a set smoothness requirement is met; S504: Perform a global check on the second path to ensure that the path is smooth as a whole, and obtain a third path, where the third path is the laser-marked path.

7. A control device, characterized in that: The method comprises a processor and a memory, wherein the processor is coupled to the memory, the memory is used to store computer programs or instructions, and the processor is used to execute the computer program or instructions in the memory, so that the method according to any one of claims 1 to 6 is executed.

8. A computer program product, characterized in that The computer program product stores a program or an instruction, and when the program or the instruction is executed, the method according to any one of claims 1 to 6 is implemented.

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