Substrate processing apparatus

Abstract

In a substrate processing apparatus (1), a plurality of collecting tubes (61a-61c) are disposed above a plurality of processing units (31) arranged in the vertical direction. The plurality of collecting tubes (61a-61c) correspond to a plurality of fluid types, respectively. In addition, a plurality of exhaust pipes (4) extending upward from the plurality of processing parts (31) and into which exhaust gas from the plurality of processing parts (31) flows are provided. The upper end of each exhaust pipe (4) is provided with a flow path switching part (5) which connects the upper end to the plurality of collecting pipes (61a-61c) and switches the flow path of the exhaust gas flowing in the exhaust pipe (4) between the plurality of collecting pipes (61a-61c). In the substrate processing apparatus (1), the pressure loss in the exhaust pipe (4) can be reduced, and the occupied area can be reduced.

Description

[0001] This divisional application of the invention application is a divisional application of the invention application with an international filing date of August 22, 2019, an international application number of PCT / JP2019 / 032884, a national application number of 201980061111.4 when entering the Chinese national phase, and an invention title of "Substrate Processing Apparatus". Technical Field

[0002] The present invention relates to a substrate processing apparatus. Background Art

[0003] Conventionally, in the manufacture of semiconductor devices, a substrate processing apparatus that processes a semiconductor substrate (hereinafter simply referred to as "substrate") using various processing fluids is used. In addition, Japanese Patent Application Laid-Open No. 2016-72480 (Document 1) discloses an exhaust switching device that switches the exhaust gas discharge port of the exhaust gas discharged from the substrate processing apparatus among three exhaust gas processing apparatuses according to the type of the processing fluid. In Document 1, the substrate processing apparatus is provided in a clean room, and the exhaust switching device is provided in a lower space of the clean room called a sub-clean zone. By providing the exhaust switching device, the environmental burden can be reduced. In addition, International Publication No. WO2014 / 103523 discloses an exhaust switching device configured by embedding exhaust switching units corresponding to a plurality of processing chambers in a multi-layer state, and describes that casters are installed on the exhaust switching device to be movable, or the exhaust switching device is fixed to the ground at the installation site with bolts.

[0004] However, as shown in Document 1, when the exhaust switching device is arranged in the sub-clean zone, the length of the continuous exhaust pipe from the processing unit of the substrate processing apparatus to the exhaust switching device becomes long, and thus the pressure loss in the exhaust pipe becomes large. It is conceivable to arrange the exhaust switching device on the side of the processing unit to shorten the exhaust pipe, but the overall footprint of the substrate processing apparatus becomes large. Summary of the Invention

[0005] The present invention is a technology for a substrate processing apparatus, and an object thereof is to reduce the pressure loss in the exhaust pipe and reduce the footprint of the substrate processing apparatus.

[0006] The substrate processing apparatus of the present invention includes: a plurality of processing units arranged in the vertical direction, which can respectively supply a variety of processing fluids to the substrate; a plurality of exhaust pipes, which extend upward from the plurality of processing units and into which the exhaust gases from the plurality of processing units respectively flow; two or more collecting pipes, which are arranged above the plurality of processing units and correspond to two or more fluid categories obtained by classifying the variety of processing fluids respectively; a plurality of flow path switching units, which are respectively provided at the upper ends of one exhaust pipe and connect the upper ends to the two or more collecting pipes to switch the flow path of the exhaust gas flowing in the exhaust pipe between the two or more collecting pipes; and a control unit, which controls the plurality of flow path switching units according to the processing fluids used in the plurality of processing units.

[0007] According to the present invention, it is possible to reduce the pressure loss in the exhaust pipe and reduce the occupied area of the substrate processing apparatus.

[0008] In a preferred embodiment of the present invention, the two or more collecting pipes overlap the plurality of processing units in the vertical direction.

[0009] In other preferred embodiments of the present invention, the substrate processing apparatus further includes a support frame for supporting the plurality of processing units, and the two or more collecting pipes are fixed relative to the support frame.

[0010] In other preferred embodiments of the present invention, the two or more collecting pipes extend in a long side direction substantially perpendicular to the vertical direction. Taking the set group of the plurality of processing units, the plurality of exhaust pipes, and the plurality of flow path switching units as a stacking unit, the substrate processing apparatus further includes another stacking unit having the same configuration as the stacking unit and located in the long side direction relative to the stacking unit.

[0011] In other preferred embodiments of the present invention, each exhaust pipe includes: a first exhaust path extending upward from the processing unit; and a second exhaust path having a portion extending from the upper end of the first exhaust path in a direction substantially perpendicular to the vertical direction and connected to the flow path switching unit. The upper ends of the plurality of first exhaust paths in the plurality of exhaust pipes are arranged close to each other, the lengths of the plurality of first exhaust paths are different from each other, the lengths of the plurality of second exhaust paths in the plurality of exhaust pipes are different from each other, and in each combination of two exhaust pipes included in the plurality of exhaust pipes, the length of the first exhaust path in one exhaust pipe is longer than the length of the first exhaust path in the other exhaust pipe, and the length of the second exhaust path in the one exhaust pipe is shorter than the length of the second exhaust path in the other exhaust pipe.

[0012] In other preferred embodiments of the present invention, each processing unit is connected to an exhaust pipe extending in the vertical direction via a long hole extending in the vertical direction.

[0013] In other preferred embodiments of the present invention, the substrate processing apparatus further includes: a plurality of liquid ejection units that eject a predetermined liquid into the plurality of exhaust pipes respectively; and a plurality of drain pipes that extend downward from the lower end portions of the plurality of exhaust pipes.

[0014] In other preferred embodiments of the present invention, the substrate processing apparatus further includes a plurality of pressure adjustment units provided in the plurality of exhaust pipes respectively. Each pressure adjustment unit includes: a pressure sensor that measures the pressure inside the exhaust pipe; and a flow rate adjustment mechanism that adjusts the flow rate of the exhaust gas flowing in the exhaust pipe based on the measurement value of the pressure sensor.

[0015] In other preferred embodiments of the present invention, each of the pressure adjustment units is disposed in a region adjacent to the exhaust port of the processing unit.

[0016] In other preferred embodiments of the present invention, the substrate processing apparatus further includes a plurality of external gas introduction units. The plurality of external gas introduction units are respectively connected to two or more manifolds, and correspond to the plurality of flow path switching units. The external gas introduction unit corresponding to each flow path switching unit introduces external gas into a manifold other than the manifold of the flow path selected as the exhaust gas by each flow path switching unit.

[0017] In this case, it is preferable that each external gas introduction unit has a shutter that changes the opening area of the external gas introduction port communicating with the two or more manifolds.

[0018] The above object and other objects, features, aspects, and advantages will become apparent with reference to the accompanying drawings and the following detailed description of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a view showing the appearance of the substrate processing apparatus.

[0020] Figure 2 is a top view showing the substrate processing apparatus.

[0021] Figure 3 is a view showing the stacking unit.

[0022] Figure 4 is a top view showing the second exhaust path.

[0023] Figure 5 is a view showing the internal structure of the flow path switching unit and the external gas introduction unit.

[0024] Figure 6It is a view showing the internal structure near the lower end of the exhaust pipe.

[0025] Figure 7 It is a view showing a plurality of stacked units connected to the header pipe group.

[0026] Figure 8 It is a view showing another arrangement of a plurality of header pipes. Detailed Description

[0027] Figure 1 It is a view showing the appearance of a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-sheet type apparatus that processes substrates 9 one by one in a processing unit 31 described later. In Figure 1 Three directions orthogonal to each other are shown as the X direction, the Y direction, and the Z direction. Typically, the Z direction is the vertical direction (vertical direction), and the X direction and the Y direction are the horizontal directions.

[0028] Figure 2 It is a top view of the substrate processing apparatus 1 as viewed from the (+Z) side toward the (-Z) direction. As Figure 1 and Figure 2 shown, the substrate processing apparatus 1 includes a control unit 10, a support frame 20, a container mounting unit 21, an index robot 22, a central robot 23, a plurality of stacked units 3, and a plurality of header pipe groups 6. The control unit 10 undertakes the overall control of the substrate processing apparatus 1.

[0029] As Figure 2 shown, the container mounting unit 21 is provided at the (-Y) side end of the substrate processing apparatus 1 and has a plurality of container mounting tables 211. The plurality of container mounting tables 211 extend in the X direction. A storage container C that houses a plurality of substrates 9 is mounted on each container mounting table 211. The storage container C is a carrier that houses a plurality of substrates 9 in multiple layers. The index robot 22 is disposed near the container mounting unit 21. The index robot 22 removes an unprocessed substrate 9 from the storage container C and loads the processed substrate 9 into the storage container C. In addition, the index robot 22 exchanges the substrate 9 with the central robot 23. The central robot 23 is on the (+Y) side of the index robot 22 and is disposed substantially at the center in the X direction. The central robot 23 loads the unprocessed substrate 9 received from the index robot 22 into the processing unit 31 described later. In addition, the central robot 23 removes the processed substrate 9 from the processing unit 31 and delivers the substrate 9 to the index robot 22.

[0030] The plurality of stacked units 3 are arranged around the central robot 23. In Figure 2In the example, on the (+X) side of the central robot 23, two stacking units 3 are arranged in the Y direction, and on the (-X) side of the central robot 23, two stacking units 3 are arranged in the Y direction. As Figure 1 shown, each stacking unit 3 includes a plurality of processing units 31. The plurality of processing units 31 are arranged in the vertical direction. In the present embodiment, each stacking unit 3 has three processing units 31. The number of processing units 31 in each stacking unit 3 may be two, or may be four or more. The support frame 20 is a support body that supports the main components of the substrate processing apparatus 1. In Figure 1 it, a part of the support frame 20 is shown by a thick dashed line. The processing units 31 of the plurality of stacking units 3 are mounted on the support frame 20 using bolts or the like and are supported by the support frame 20.

[0031] In Figure 1 and Figure 2 it, the outer shape of the processing chamber in each processing unit 31 is shown by a dashed rectangle. In the processing unit 31, a substrate holding part, a nozzle part, etc. are provided inside the processing chamber. In the processing unit 31, various processing fluids can be supplied to the substrate 9 held by the substrate holding part via the nozzle part. When the processing fluid is a liquid, for example, a substrate rotating part for rotating the substrate holding part and a cup part surrounding the periphery of the substrate holding part are also provided, and the processing fluid supplied onto the rotating substrate 9 is received and recovered by the cup part. In addition, a fan filter unit (FFU) is provided above the processing chamber, and a downward airflow is formed in the processing chamber. The processing fluids used in the processing unit 31 are classified into a plurality of fluid categories. In the present embodiment, the plurality of fluid categories include acidic chemical solutions, alkaline chemical solutions, and organic solvents. The processing fluid may also be a gas.

[0032] Examples of the acidic chemical solution are DHF (dilute hydrofluoric acid), SC2 (peroxymonosulfuric acid), BHF (Buffered HF), sulfuric acid, SPM (hydrogen peroxide solution), fluonitric acid (a mixed solution of hydrofluoric acid and nitric acid), etc. Examples of the alkaline chemical solution are SC1 (ammonia hydrogen peroxide solution), ammonia water, ammonium fluoride solution, TMAH (tetramethylammonium hydroxide), etc. The organic solvents are IPA (isopropyl alcohol), methanol, ethanol, HFE (hydrofluoroether), acetone, etc. The organic solvent may be a mixed solution, for example, a mixed solution of IPA and acetone, a mixed solution of IPA and methanol, etc.

[0033] As Figure 2As shown, in the substrate processing apparatus 1, an acidic liquid chemical supply unit 81, a basic liquid chemical supply unit 82, and an organic solvent supply unit 83 are further provided. The acidic liquid chemical supply unit 81, the basic liquid chemical supply unit 82, and the organic solvent supply unit 83 are arranged on the (+Y) side of the plurality of stacking units 3. The acidic liquid chemical supply unit 81 stores the acidic liquid chemical and supplies the acidic liquid chemical to the nozzle unit of the processing unit 31. The basic liquid chemical supply unit 82 stores the basic liquid chemical and supplies the basic liquid chemical to the nozzle unit of the processing unit 31. The organic solvent supply unit 83 stores the organic solvent and supplies the organic solvent to the nozzle unit of the processing unit 31.

[0034] A plurality of header pipe groups 6 are arranged above the plurality of stacking units 3. As Figure 1 shown, each header pipe group 6 has a plurality of header pipes 61a, 61b, and 61c. The plurality of header pipes 61a to 61c included in each header pipe group 6 are stacked in the vertical direction and extend in a direction substantially perpendicular to the vertical direction (the Y direction in Figure 1 , hereinafter referred to as the "long side direction"). In the present embodiment, the cross-sectional shape of the header pipes 61a to 61c perpendicular to the long side direction is rectangular (refer to Figure 3 described later). The cross-sectional shape of the header pipes 61a to 61c may also be other shapes. The plurality of header pipes 61a to 61c are fixed to the support frame 20 via members not shown.

[0035] In Figure 1 and Figure 2 example, two header pipe groups 6 are provided, and each header pipe group 6 includes three header pipes 61a to 61c. In addition, each header pipe group 6 is arranged above two stacking units 3 arranged in the long side direction, and each processing unit 31 included in the two stacking units 3 is connected to the three header pipes 61a to 61c of the header pipe group 6 via an exhaust pipe 4 and the like described later. The three header pipes 61a to 61c of the header pipe group 6 overlap the plurality of processing units 31 included in the two stacking units 3 in the vertical direction. That is, as Figure 2 shown, when the substrate processing apparatus 1 is viewed from above, the three header pipes 61a to 61c overlap the plurality of processing units 31. In the substrate processing apparatus 1, a fan filter unit (FFU) is provided above the central robot 23. However, in the vertical direction, the plurality of header pipes 61a to 61c overlap the plurality of processing units 31, thereby preventing the introduction of air in the fan filter unit from being obstructed by the header pipes 61a to 61c.

[0036] The multiple collecting tubes 61a to 61c included in each collecting tube group 6 respectively correspond to the multiple fluid categories already described. In the present embodiment, among the multiple collecting tubes 61a to 61c stacked in the vertical direction, the uppermost collecting tube 61a corresponds to the acidic chemical solution. That is, when using the acidic chemical solution in the processing unit 31, the uppermost collecting tube 61a is used as the discharge line for the gas discharged from the processing unit 31 (hereinafter referred to as "acidic exhaust gas"). The acidic exhaust gas includes, for example, the gas and mist generated from the acidic chemical solution. Similarly, when using the alkaline chemical solution in the processing unit 31, the lowermost collecting tube 61c is used as the discharge line for the gas discharged from the processing unit 31 (hereinafter referred to as "alkaline exhaust gas"). The alkaline exhaust gas includes, for example, the gas and mist generated from the alkaline chemical solution. In addition, when using the organic solvent in the processing unit 31, the central collecting tube 61b is used as the discharge line for the gas discharged from the processing unit 31 (hereinafter referred to as "organic exhaust gas"). The organic exhaust gas includes, for example, the gas and mist generated from the organic solvent.

[0037] As Figure 2 shown, the (+Y)-side ends of the multiple collecting tubes 61a to 61c are connected to the exhaust unit 62. In the exhaust unit 62, a plurality of exhaust paths extending in the vertical direction are provided, and the multiple collecting tubes 61a to 61c are respectively connected to the upper ends of the multiple exhaust paths. The lower ends of the respective exhaust paths are connected to the factory piping. The factory piping is depressurized to a substantially constant pressure. The acidic exhaust gas, alkaline exhaust gas, and organic exhaust gas are introduced into individual exhaust treatment devices via the factory piping and are appropriately treated. Depending on the configuration of the factory piping, the collecting tubes 61a to 61c can be connected to the factory piping via exhaust paths extending upward from the collecting tubes 61a to 61c.

[0038] Figure 3 FIG. shows the stacking unit 3 observed from the (-Y) side toward the (+Y) direction. Each stacking unit 3 further includes a plurality of exhaust pipes 4, a plurality of flow path switching units 5, and a plurality of external gas introduction units 7 on the basis of the multiple processing units 31. The multiple exhaust pipes 4 are respectively connected to the multiple processing units 31. Each exhaust pipe 4 is a flow path for the acidic exhaust gas, alkaline exhaust gas, and organic exhaust gas (hereinafter collectively referred to as "exhaust gas") discharged from the processing unit 31 to flow in. In addition, the processing liquid (including acidic chemical solution, alkaline chemical solution, and organic solvent) used by the processing unit 31 is discharged via a drain line (not shown).

[0039] As Figure 3 shown, each exhaust pipe 4 includes a first exhaust path 41 and a second exhaust path 42. The first exhaust path 41 extends in the vertical direction, and the lower end 411 of the first exhaust path 41 is connected to the processing unit 31. The lower end 411 of the first exhaust path 41 is the lower end portion of the exhaust pipe 4, and hereinafter is referred to as "lower end portion 411". Near the lower end portion 411 of the exhaust pipe 4, a pressure regulating unit 46 and the like (refer toFigure 6 )。The upper end 412 of the first exhaust path 41 is located above the processing unit 31. A second exhaust path 42 is connected to the upper end 412 of the first exhaust path 41.

[0040] As described above, in each stacking unit 3, a plurality of processing units 31 are stacked in the vertical direction. Among the plurality of first exhaust paths 41 connected to the plurality of processing units 31, the positions of the lower end portions 411 in the vertical direction are different from each other. On the other hand, among the plurality of first exhaust paths 41, the positions of the upper ends 412 in the vertical direction are the same as each other. Therefore, the lengths of the plurality of first exhaust paths 41 are different from each other. Among the plurality of first exhaust paths 41, the length of the first exhaust path 41 connected to the lowermost processing unit 31 is the largest, and the length of the first exhaust path 41 connected to the uppermost processing unit 31 is the smallest. In the example where three processing units 31 are stacked in the vertical direction Figure 3 , the length of the first exhaust path 41 connected to the lower processing unit 31 is longer than the first exhaust path 41 connected to the middle processing unit 31, and the length of the first exhaust path 41 connected to the middle processing unit 31 is longer than the first exhaust path 41 connected to the upper processing unit 31.

[0041] In addition, in each stacking unit 3, the relative position of the lower end portion 411 of the first exhaust path 41 with respect to the processing unit 31 is the same among the plurality of first exhaust paths 41. Specifically, on the side surface of the processing unit 31 facing the Y direction, the lower end portion 411 is installed at the end in the X direction. In addition, in the first exhaust path 41 connected to the middle processing unit 31 and the first exhaust path 41 connected to the lower processing unit 31, a portion extending in a direction inclined with respect to the vertical direction is provided in such a manner that the upper ends 412 in the plurality of first exhaust paths 41 are close to each other and arranged in the X direction.

[0042] Figure 4 is a top view showing the plurality of second exhaust paths 42 in the stacking unit 3 on the (+X) side in Figure 3 . Each second exhaust path 42 has a first connection end 421 and a second connection end 422. The first connection end 421 and the second connection end 422 are the two end portions of the second exhaust path 42.

[0043] The first connection ends 421 of the plurality of second exhaust paths 42 are arranged in the X direction, and the upper ends 412 of the plurality of first exhaust paths 41 are respectively connected to the plurality of first connection ends 421. As Figure 3 and Figure 4As shown, the upper end 412 of the first exhaust path 41 connected to the processing unit 31 in the upper layer is connected to the first connection end portion 421 on the outermost (-X) side, and the first connection end portion 421 is connected to the processing unit 31 in the upper layer via the first exhaust path 41. In this way, the first connection end portion 421 on the outermost (-X) side and the second exhaust path 42 having the first connection end portion 421 correspond to the processing unit 31 in the upper layer. Similarly, the upper end 412 of the first exhaust path 41 connected to the processing unit 31 in the middle layer is connected to the first connection end portion 421 adjacent to the first connection end portion 421 on the (+X) side, and the first connection end portion 421 and the second exhaust path 42 having the first connection end portion 421 correspond to the processing unit 31 in the middle layer. In addition, the upper end 412 of the first exhaust path 41 connected to the processing unit 31 in the lower layer is connected to the first connection end portion 421 on the outermost (+X) side, and the first connection end portion 421 and the second exhaust path 42 having the first connection end portion 421 correspond to the processing unit 31 in the lower layer.

[0044] The second connection end portions 422 of the plurality of second exhaust paths 42 are arranged in the longitudinal direction (Y direction) of the header pipes 61a to 61c, and a plurality of flow path switching units 5 are respectively connected to the plurality of second connection end portions 422. In the second exhaust path 42 in which the first connection end portion 421 is arranged on the outermost (+X) side, that is, the second exhaust path 42 corresponding to the processing unit 31 in the lower layer, the path from the first connection end portion 421 to the second connection end portion 422 extends only in the X direction. In the other two second exhaust paths 42, that is, the second exhaust path 42 corresponding to the processing unit 31 in the middle layer and the second exhaust path 42 corresponding to the processing unit 31 in the upper layer, the path from the first connection end portion 421 to the second connection end portion 422 is in an L shape having a portion extending in the Y direction and a portion extending in the X direction. The lengths of the above paths in the plurality of second exhaust paths 42 are different from each other. Specifically, the length of the second exhaust path 42 corresponding to the processing unit 31 in the upper layer is longer than the length of the second exhaust path 42 corresponding to the processing unit 31 in the middle layer, and the length of the second exhaust path 42 corresponding to the processing unit 31 in the middle layer is longer than the length of the second exhaust path 42 corresponding to the processing unit 31 in the lower layer. In addition, Figure 4 The shape of the second exhaust path 42 is just an example, and the second exhaust path 42 may also have other shapes having a portion extending in a direction substantially perpendicular to the vertical direction from the upper end of the first exhaust path 41.

[0045] As described above, among the plurality of exhaust pipes 4 included in each of the stacked units 3, the length of the first exhaust path 41 corresponding to the upper processing unit 31 is the smallest among the plurality of first exhaust paths 41, and the length of the first exhaust path 41 corresponding to the lower processing unit 31 is the largest. In addition, the length of the second exhaust path 42 corresponding to the upper processing unit 31 is the largest among the plurality of second exhaust paths 42, and the length of the second exhaust path 42 corresponding to the lower processing unit 31 is the smallest. Therefore, in each combination of two exhaust pipes 4 included in the plurality of exhaust pipes 4, the length of the first exhaust path 41 in one exhaust pipe 4 is longer than the length of the first exhaust path 41 in the other exhaust pipe 4, and the length of the second exhaust path 42 in this one exhaust pipe 4 is shorter than the length of the second exhaust path 42 in the other exhaust pipe 4. In addition, the above relationship in each combination of two exhaust pipes 4 may not hold depending on the design of the substrate processing apparatus 1.

[0046] Figure 5 FIG. is a diagram schematically showing the internal configuration of the flow path switching unit 5 and the external gas introduction unit 7. In Figure 5 also shown is a pressure regulating unit 46 described later. As described above, the flow path switching unit 5 is attached to the second exhaust path 42 (see Figure 4 ) which is the upper end portion of the exhaust pipe 4, and is connected to one processing unit 31 via the exhaust pipe 4. The flow path switching unit 5 includes a branch pipe 51 and a plurality of exhaust opening / closing valves 53a, 53b, 53c. One end of the branch pipe 51 is connected to the exhaust pipe 4. The other end of the branch pipe 51 branches into a plurality of branch paths 52a, 52b, 52c, and the plurality of branch paths 52a to 52c are respectively connected to the plurality of manifold pipes 61a to 61c of the manifold pipe group 6. In this way, the flow path switching unit 5 connects the upper end portion of the exhaust pipe 4 to the plurality of manifold pipes 61a to 61c.

[0047] In the present embodiment, the branch path 52a is connected to the manifold pipe 61a for acidic exhaust, the branch path 52b is connected to the manifold pipe 61b for organic exhaust, and the branch path 52c is connected to the manifold pipe 61c for alkaline exhaust. A plurality of exhaust opening / closing valves 53a to 53c are respectively provided inside the plurality of branch paths 52a to 52c. The exhaust opening / closing valves 53a to 53c are butterfly valves, for example. The exhaust opening / closing valves 53a to 53c may also be other types of valves. Each of the exhaust opening / closing valves 53a to 53c is connected to an actuator (not shown) such as a cylinder or a motor, and can open and close the flow paths of the branch paths 52a to 52c using the exhaust opening / closing valves 53a to 53c.

[0048] The external gas introduction section 7 is arranged at a position facing each flow path switching section 5 with the header pipe group 6 therebetween, and is connected to the plurality of header pipes 61a to 61c. The external gas introduction section 7 includes a branch pipe 71, a plurality of external gas on-off valves 73a, 73b, 73c, and a shutter 79. One end of the branch pipe 71 is opened as an external gas introduction port 711. As will be described later, the external gas introduction port 711 communicates with the plurality of header pipes 61a to 61c via the branch pipe 71. A shutter 79 is provided at the external gas introduction port 711. The shutter 79 has, for example, two plate-like members 791, and the two plate-like members 791 can move along the opening surface of the external gas introduction port 711. In the shutter 79, by changing the positions of the two plate-like members 791, the opening area of the external gas introduction port 711 can be changed.

[0049] The other end of the branch pipe 71 branches into a plurality of branch paths 72a, 72b, 72c, and the plurality of branch paths 72a to 72c are respectively connected to the plurality of header pipes 61a to 61c of the header pipe group 6. That is, the branch path 72a is connected to the header pipe 61a for acidic exhaust gas, the branch path 72b is connected to the header pipe 61b for organic exhaust gas, and the branch path 72c is connected to the header pipe 61c for alkaline exhaust gas. A plurality of external gas on-off valves 73a to 73c are respectively provided inside the plurality of branch paths 72a to 72c. The external gas on-off valves 73a to 73c are, for example, butterfly valves. The external gas on-off valves 73a to 73c may also be other types of valves. Each of the external gas on-off valves 73a to 73c is connected to an actuator (not shown) such as a cylinder or a motor, and the flow paths of the branch paths 72a to 72c can be opened and closed by the external gas on-off valves 73a to 73c.

[0050] In the substrate processing apparatus 1, according to the processing fluid used in each processing section 31, the control section 10 controls the flow path switching section 5 and the external gas introduction section 7 corresponding to the processing section 31. Specifically, when an acidic chemical solution is used in the processing section 31 to which each flow path switching section 5 is connected, the exhaust on-off valve 53a in the branch path 52a is opened, and the other exhaust on-off valves 53b, 53c are closed. Thereby, the acidic exhaust gas from the processing section 31 is introduced into the header pipe 61a for acidic exhaust gas, and is not introduced into the other header pipes 61b, 61c. At this time, the external gas on-off valve 73a in the branch path 72a of the external gas introduction section 7 is closed, and the other external gas on-off valves 73b, 73c are opened. Thereby, the external gas is introduced into the header pipe 61b for organic exhaust gas and the header pipe 61c for alkaline exhaust gas via the branch paths 72b, 72c.

[0051] In addition, when an organic solvent is used in the processing unit 31, the exhaust opening / closing valve 53b in the branch passage 52b is opened, and the other exhaust opening / closing valves 53a and 53c are closed. Thus, the organic exhaust gas from the processing unit 31 is introduced into the manifold 61b for organic exhaust gas, and is not introduced into the other manifolds 61a and 61c. At this time, the external gas opening / closing valve 73b in the branch passage 72b of the external gas introduction unit 7 is closed, and the other external gas opening / closing valves 73a and 73c are opened. Thus, the external gas is introduced into the manifold 61a for acidic exhaust gas and the manifold 61c for alkaline exhaust gas via the branch passages 72a and 72c.

[0052] Moreover, when an alkaline liquid medicine is used in the processing unit 31, the exhaust opening / closing valve 53c in the branch passage 52c is opened, and the other exhaust opening / closing valves 53a and 53b are closed. Thus, the alkaline exhaust gas from the processing unit 31 is introduced into the manifold 61c for alkaline exhaust gas, and is not introduced into the other manifolds 61a and 61b. At this time, the external gas opening / closing valve 73c in the branch passage 72c of the external gas introduction unit 7 is closed, and the other external gas opening / closing valves 73a and 73b are opened. Thus, the external gas is introduced into the manifold 61a for acidic exhaust gas and the manifold 61b for organic exhaust gas via the branch passages 72a and 72b.

[0053] As described above, in each flow path switching unit 5, the flow path of the exhaust gas flowing in the exhaust pipe 4 is switched among the plurality of manifolds 61a to 61c. In addition, in the external gas introduction unit 7 corresponding to the flow path switching unit 5, the external gas is introduced into the manifolds other than the manifold of the flow path selected as the exhaust gas by the flow path switching unit 5. In each external gas introduction unit 7, the opening area of the external gas inlet 711 is adjusted in advance by using the shutter 79 so that the introduction flow rate of the external gas into each of the manifolds 61a to 61c is approximated to the flow rate of the exhaust gas when only the exhaust gas is introduced into the respective manifolds 61a to 61c. Thus, the flow rate of the gas flowing into each of the manifolds 61a to 61c can be kept substantially constant all the time, and the pressure fluctuation in the manifolds 61a to 61c can be suppressed.

[0054] Figure 6 FIG. is a diagram showing the internal structure near the lower end portion 411 of the exhaust pipe 4. In the processing chamber of the processing unit 31, a long hole 311 extending in the vertical direction is formed in the surface facing the Y direction. A long hole 413 extending in the vertical direction is also formed in the lower end portion 411 of the exhaust pipe 4 extending in the vertical direction. The exhaust pipe 4 is installed on the processing unit 31 so that the long hole 311 of the processing unit 31 overlaps with the long hole 413 of the exhaust pipe 4. In this way, by connecting the processing unit 31 and the exhaust pipe 4 via the long holes 311 and 413, the flow path area at the connection portion between the processing unit 31 and the exhaust pipe 4 is increased, and the pressure loss can be reduced.

[0055] The substrate processing apparatus 1 further includes a plurality of pressure adjustment units 46, a plurality of liquid ejection units 47, and a plurality of drain pipes 48. The pressure adjustment units 46 and the drain pipes 48 are disposed at the lower end portions 411 of the respective exhaust pipes 4, that is, in the region adjacent to the exhaust ports (long holes 311) of the processing units 31. The liquid ejection units 47 are provided near the long holes 311 in the respective processing units 31. The pressure adjustment unit 46 includes a pressure sensor 461 and a flow rate adjustment mechanism 462. The flow rate adjustment mechanism 462 includes a damper 463 and an opening degree adjustment unit 464. The damper 463 is provided in the exhaust pipe 4 above the long hole 413. The opening degree adjustment unit 464 has, for example, a motor and changes the opening degree of the damper 463. The pressure sensor 461 is provided in the exhaust pipe 4 near the long hole 413 and measures the pressure in the exhaust pipe 4. The measured value of the pressure sensor 461 is input to the control unit 10. In the control unit 10, the opening degree of the damper 463 is adjusted using the opening degree adjustment unit 464 so that the measured value of the pressure sensor 461 becomes constant at a prescribed value. In this way, the flow rate of the exhaust flowing in the exhaust pipe 4 is adjusted by the flow rate adjustment mechanism 462 based on the measured value of the pressure sensor 461.

[0056] The drain pipe 48 extends downward from the lower end portion 411 of the exhaust pipe 4. The drain pipe 48 is connected to the drain treatment equipment via factory piping. As described above, the liquid ejection unit 47 is provided near the long hole 311 in the processing unit 31. The liquid ejection unit 47 is a nozzle unit that ejects a prescribed liquid into the exhaust pipe 4. In the present embodiment, pure water is ejected from the liquid ejection unit 47. As a result, simultaneously with the generation of, for example, a chemical solution, minute crystals and the like contained in the exhaust are captured by the ejected pure water and discharged to the drain treatment equipment together with the pure water via the drain pipe 48. In this way, minute crystals and the like contained in the exhaust are separated from the exhaust by the pure water from the liquid ejection unit 47. In the liquid ejection unit 47, a liquid other than pure water may also be used.

[0057] Figure 7 FIG. is a diagram schematically showing a plurality of stacked units 3 connected to one manifold group 6. In Figure 7 this figure, a plurality of manifolds 61a to 61c of the manifold group 6 are shown by thick solid lines. As Figure 1 and Figure 7 shown, each processing unit 31 included in one stacked unit 3 is connected to the plurality of manifolds 61a to 61c via the exhaust pipe 4 and the flow path switching unit 5. In addition, other stacked units 3 are located in the long side direction (Y direction) of the manifolds 61a to 61c with respect to this one stacked unit 3, and each processing unit 31 included in the other stacked units 3 is connected to the plurality of manifolds 61a to 61c via the exhaust pipe 4 and the flow path switching unit 5. In this way, a plurality of stacked units 3 having the same configuration are connected to the plurality of manifolds 61a to 61c of each manifold group 6.

[0058] In the present embodiment, a pressure regulating unit 63 having the same structure as the above-described pressure regulating unit 46 provided in the exhaust pipe 4 is provided in each of the header pipes 61a to 61c as shown in Figure 7 . Thereby, even when the pressure of the factory piping varies due to the influence of other devices connected to the factory piping, the pressure in the header pipes 61a to 61c (the pressure on the side of the stacking unit 3 compared to the pressure regulating unit 63) that is reduced via the factory piping is suppressed from varying. Figure 7 As described above, an external gas introduction unit 7 (not shown in the figure) is provided for each flow path switching unit 5. The external gas introduction unit 7 also introduces external gas into the header pipes of the flow paths not selected as the exhaust by the flow path switching unit 5. Thereby, the flow rate of the gas flowing into each of the header pipes 61a to 61c can be kept substantially constant, and the pressure in the header pipes 61a to 61c is suppressed from varying according to the content of the processing in the plurality of processing units 31 connected to the header pipes 61a to 61c. Further, a pressure regulating unit 46 is provided in each exhaust pipe 4. Thus, in combination with the suppression of the pressure variation in the header pipes 61a to 61c, the pressure near the long hole 311, which is the exhaust port of the processing unit 31, can be always kept substantially constant. As a result, the pressure conditions in each of the processing units 31 are kept constant over time, and the pressure conditions can also be made constant among the plurality of processing units 31.

[0059] In addition, as in the device of JP-A-2016-72480 (the above-mentioned document 1), when the exhaust switching device for each processing unit is arranged in the sub-clean zone, the length of the exhaust pipe continuous from the processing unit to the exhaust switching device becomes long, so the pressure loss in the exhaust pipe becomes large. Further, the lengths and paths of the plurality of exhaust pipes sometimes differ due to the arrangement of the exhaust switching device, and there is a deviation in the pressure conditions among the plurality of processing units connected to the plurality of exhaust pipes. In this case, there is a large difference in the processing results among the plurality of processing units. It is possible to consider arranging the exhaust switching device on the side of the processing unit to shorten the exhaust pipe, but the occupied area of the substrate processing apparatus as a whole becomes large. Further, when the number of processing units is increased, the number of required exhaust switching devices also increases, so the occupied area of the substrate processing apparatus as a whole becomes further large (the same applies when the exhaust switching device is arranged in the sub-clean zone). Figure 7

[0060]

[0061] In contrast, in the substrate processing apparatus 1, a plurality of manifolds 61a to 61c are disposed above the plurality of processing units 31 arranged in the vertical direction. In addition, the plurality of exhaust pipes 4 are installed so as to extend upward from the plurality of processing units 31. Moreover, a flow path switching unit 5 is provided at the upper end of each exhaust pipe 4, and the flow path of the exhaust gas flowing in the exhaust pipe 4 is switched among the plurality of manifolds 61a to 61c. In this way, by disposing the flow path switching unit 5 near the processing unit 31, the length of the exhaust pipe 4 can be shortened and the pressure loss in the exhaust pipe 4 can be reduced as compared with the case where the exhaust gas switching device is disposed in the sub-clean zone. In addition, the condition deviation of the pressure in the plurality of processing units 31 can be reduced, and the difference in the processing results in the plurality of processing units 31 can be suppressed.

[0062] In the substrate processing apparatus 1, by disposing the plurality of manifolds 61a to 61c and the plurality of flow path switching units 5 in the upper part (top), the occupied area of the substrate processing apparatus 1 can be reduced as compared with the case where the exhaust gas switching device is disposed on the side of the processing unit. In addition, even when the number of processing units is increased, an increase in the occupied area can be suppressed. Moreover, it is easy to achieve a design in which the manifolds 61a to 61c and the flow path switching unit 5 are not covered by other components. In this case, maintenance of the manifolds 61a to 61c and the flow path switching unit 5 can be easily performed. In Figure 1 the substrate processing apparatus 1, the manifolds 61a to 61c are also fixed to the support frame 20 in the same manner as the processing unit 31, and a structure in which the manifolds 61a to 61c, the flow path switching unit 5, and the processing unit 31 are integrally provided is realized.

[0063] In each exhaust pipe 4, a first exhaust path 41 extending upward from the processing unit 31 and a second exhaust path 42 connected to the upper end of the first exhaust path 41 are provided. The second exhaust path 42 has a portion extending from the upper end of the first exhaust path 41 in a direction substantially perpendicular to the vertical direction and is connected to the flow path switching unit 5. In each combination of two exhaust pipes 4 included in the plurality of exhaust pipes 4 of each stacking unit 3, the length of the first exhaust path 41 in one exhaust pipe 4 is longer than the length of the first exhaust path 41 in the other exhaust pipe 4, and the length of the second exhaust path 42 in the one exhaust pipe 4 is shorter than the length of the second exhaust path 42 in the other exhaust pipe 4. Thereby, the difference in the pressure loss can be reduced among the plurality of exhaust pipes 4 included in the same stacking unit 3.

[0064] In the substrate processing apparatus 1, there is also provided a liquid ejection unit 47 that ejects a prescribed liquid into the exhaust pipe 4, and a drain pipe 48 that faces downward from the lower end portion 411 of the exhaust pipe 4. Thereby, minute crystals and the like contained in the exhaust gas are captured by the liquid ejected from the liquid ejection unit 47, and are discharged together with the liquid to a drain processing device via the drain pipe 48. Thereby, the crystals and the like adhere to the inner surface of the exhaust pipe 4 and the like, and an increase in pressure loss can be suppressed.

[0065] Here, assuming a case where an exhaust pipe that faces downward is provided from the processing unit 31, the liquid ejected from the liquid ejection unit 47 moves downward in the exhaust pipe. In this case, a recovery tank for recovering the liquid is provided in the middle of the exhaust pipe. In such a configuration, the pressure near the exhaust port of the processing unit 31 fluctuates due to the amount of liquid in the recovery tank. In contrast, in the substrate processing apparatus 1, by providing an exhaust pipe 4 that faces upward from the processing unit 31, pressure fluctuations caused by the amount of liquid in the recovery tank as in the above configuration are prevented.

[0066] Various modifications can be made to the above-described substrate processing apparatus 1.

[0067] In the above-described embodiment, the plurality of header pipes 61a to 61c in each header pipe group 6 are arranged in the vertical direction, but as Figure 8 shown, the plurality of header pipes 61a to 61c may also be arranged in a direction (X direction) perpendicular to the long side direction and the vertical direction. In this case, by overlapping the plurality of header pipes 61a to 61c with the plurality of processing units 31 in the vertical direction, the introduction of air in the fan filter unit provided above the central robot 23 (refer to Figure 2 ) is prevented from being obstructed by the header pipes 61a to 61c.

[0068] Alternatively, only two header pipes may be provided in each header pipe group 6. In this case, in one example, one header pipe is for acidic exhaust, and the other header pipe is for alkaline exhaust. In other examples, one header pipe is for acidic exhaust, and the other header pipe is for organic exhaust. Alternatively, four or more header pipes may be provided in each header pipe group 6. In this case, the various processing fluids that can be supplied to the processing unit 31 are divided into four or more fluid categories. As described above, as long as two or more header pipes corresponding to two or more fluid categories into which the various processing fluids are divided are provided in the substrate processing apparatus 1. In addition, the number of exhaust opening and closing valves of each flow path switching unit 5 and the number of external gas opening and closing valves of each external gas introduction unit 7 are the same as the above two or more header pipes.

[0069] In the provided exhaust pipes 4 Figure 6The pressure regulating section 46 changes the opening degree of the damper 463, thereby regulating the flow rate of the exhaust gas flowing in the exhaust pipe 4. However, for example, a blower may also be used as the flow rate regulating mechanism to implement the pressure regulating section 46. In this case, the rotation speed of the blower is changed based on the measured value of the pressure sensor 461 to regulate the flow rate of the exhaust gas flowing in the exhaust pipe 4. Similarly, a blower can also be used in the pressure regulating sections 63 provided in each of the manifolds 61a to 61c (refer to Figure 7 ).

[0070] In Figure 5 the external gas introduction section 7, instead of the plurality of branch paths 72a to 72c (branch pipes 71), a plurality of independent pipes may be provided. In this case, a plurality of external gas inlets 711 may be provided at the end portions on the side opposite to the plurality of manifolds 61a to 61c in the plurality of pipes, and gates 79 may be installed at each of the external gas inlets 711. Thereby, the flow rate of the external gas introduced can be accurately regulated for each of the manifolds 61a to 61c.

[0071] The external gas introduction section 7 may also be omitted from each of the stacking units 3 according to the design of the substrate processing apparatus 1. Each stacking unit 3 only needs to include at least a collection of a plurality of processing sections 31, a plurality of exhaust pipes 4, and a plurality of flow path switching sections 5.

[0072] The substrate processed in the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may also be a glass substrate or other substrates.

[0073] The components in the above-described embodiments and each modification can be appropriately combined as long as they do not conflict with each other.

[0074] The invention has been described and explained in detail above, but the description given is only illustrative and not restrictive. Therefore, various modifications or modes can be achieved as long as the scope of the present invention is not departed from.

[0075] Description of Reference Numerals

[0076] 1 Substrate processing apparatus

[0077] 3 Stacking unit

[0078] 4 Exhaust pipe

[0079] 5 Flow path switching section

[0080] 7 External gas introduction section

[0081] 9 Substrate

[0082] 10 Control section

[0083] 20 Support frame

[0084] 31 Processing section

[0085] 41 First exhaust path

[0086] 42 Second exhaust path

[0087] 46 Pressure regulating section

[0088] 47 Liquid ejection section

[0089] 48 Drain pipe

[0090] 53a - 53c Exhaust opening and closing valves

[0091] 61a - 61c Manifold pipes

[0092] 73a - 73c External gas opening and closing valves

[0093] 79 Gate

[0094] 311 Long hole (of the processing section)

[0095] 411 Lower end (of the exhaust pipe)

[0096] 412 Upper end (of the first exhaust path)

[0097] 461 Pressure sensor

[0098] 462 Flow regulating mechanism

[0099] 711 External gas inlet.

Claims

1. A substrate processing apparatus, characterized in that, it comprises: a plurality of processing units arranged in the vertical direction, and the plurality of processing units can respectively supply a variety of processing fluids to the substrate; a plurality of exhaust pipes, which extend upward from the plurality of processing units, and exhaust gas from the plurality of processing units respectively flows into them; two or more collecting pipes, which are arranged above the plurality of processing units and correspond to two or more fluid categories obtained by classifying the variety of processing fluids respectively; a plurality of flow path switching units, which are respectively provided at the upper ends of one exhaust pipe, and connect the upper ends to the two or more collecting pipes to switch the flow path of the exhaust gas flowing in the exhaust pipe between the two or more collecting pipes; and a plurality of external gas introduction parts, which are respectively connected to the two or more collecting pipes and correspond to the plurality of flow path switching units, a control unit, which controls the plurality of flow path switching units according to the processing fluids used in the plurality of processing units, the two or more collecting pipes are stacked in the vertical direction in a state overlapping with the plurality of processing units, the plurality of flow path switching units are connected to one side of the two or more collecting pipes, and the plurality of external gas introduction parts are connected to the other side of the two or more collecting pipes.

2. The substrate processing apparatus according to claim 1, characterized in that, each of the plurality of flow path switching units comprises two or more exhaust opening and closing valves, each of the plurality of external gas introduction parts comprises two or more external gas opening and closing valves, the two or more exhaust opening and closing valves are opposed to the two or more external gas opening and closing valves with the two or more collecting pipes in between.

3. The substrate processing apparatus according to claim 1, characterized in that, it further comprises a support frame for supporting the plurality of processing units, the two or more collecting pipes are fixed relative to the support frame.

4. The substrate processing apparatus according to claim 1, characterized in that, the two or more collecting pipes extend along a long side direction substantially perpendicular to the vertical direction, taking the set group of the plurality of processing units, the plurality of exhaust pipes and the plurality of flow path switching units as a stacking unit, the substrate processing apparatus further comprises another stacking unit having the same structure as the stacking unit and located in the long side direction relative to the stacking unit.

5. The substrate processing apparatus according to claim 1, characterized in that, each exhaust pipe comprises: a first exhaust path extending upward from the processing unit; and a second exhaust path having a portion extending from the upper end of the first exhaust path in a direction substantially perpendicular to the vertical direction and connected to the flow path switching unit, the upper ends of the plurality of first exhaust paths in the plurality of exhaust pipes are arranged close to each other, and the lengths of the plurality of first exhaust paths are different from each other, the lengths of the plurality of second exhaust paths in the plurality of exhaust pipes are different from each other, In each combination of two exhaust pipes among the plurality of exhaust pipes, the length of the first exhaust path in one exhaust pipe is longer than that in the other exhaust pipe, and the length of the second exhaust path in the one exhaust pipe is shorter than that in the other exhaust pipe.

6. The substrate processing apparatus according to claim 1, wherein, each processing unit is connected to an exhaust pipe extending in the vertical direction via a long hole extending in the vertical direction.

7. The substrate processing apparatus according to claim 1, wherein, it further comprises: a plurality of liquid ejection units that respectively eject a predetermined liquid into the plurality of exhaust pipes; and a plurality of drain pipes that extend downward from the lower end portions of the plurality of exhaust pipes.

8. The substrate processing apparatus according to claim 1, wherein, it further comprises a plurality of pressure adjustment units respectively provided in the plurality of exhaust pipes, each pressure adjustment unit comprising: a pressure sensor that measures the pressure inside the exhaust pipe; and a flow rate adjustment mechanism that adjusts the flow rate of the exhaust gas flowing in the exhaust pipe based on the measurement value of the pressure sensor.

9. The substrate processing apparatus according to claim 8, wherein, each of the pressure adjustment units is disposed in a region adjacent to the exhaust port of the processing unit.

10. The substrate processing apparatus according to any one of claims 1 to 9, wherein, an external gas introduction unit corresponding to each flow path switching unit introduces external gas into a manifold other than the manifold of the flow paths selected as the exhaust gas by each flow path switching unit.

11. The substrate processing apparatus according to claim 10, wherein, each external gas introduction unit has a shutter that changes the opening area of the external gas inlet communicating with two or more manifolds.

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