Gallium nitride-based third-generation semiconductor blue laser

Abstract

The invention discloses a gallium nitride-based third-generation semiconductor blue laser, which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and is characterized in that a multi-state exciton induction layer is arranged between the lower waveguide layer and the lower limiting layer; the multi-state exciton induction layer comprises a first multi-state exciton induction layer, a second multi-state exciton induction layer and a third multi-state exciton induction layer. According to the invention, the multi-state exciton induction layer inhibits the annihilation of triplet excitons, reduces the dissipation of the triplet excitons, enhances the transfer of triplet energy, improves the generation efficiency of the triplet excitons, improves the number of long-life triplets, and improves the performance of the device. The radiation lasing of triplet excitons to the active layer of the laser element and the luminescence of singlet-triplet mixed self-confinement excitons are induced, the defect density is reduced, the excitation threshold value of the laser element is reduced, the quantum efficiency in a quantum well is improved, and the aging life of the quantum well is prolonged.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and particularly to a gallium nitride-based third-generation semiconductor blue laser. Background Art

[0002] Lasers are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers and various classification methods. The main types include solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small volume, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, very high brightness, and the output power of a single laser can be in the watt level. While nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the milliwatt level.

[0005] 2) The operating current density of lasers reaches kA / cm 2 , which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect.

[0006] 3) Light-emitting diodes have spontaneous transition radiation, which is incoherent light that jumps from a high energy level to a low energy level without external action. While lasers are stimulated transition radiation, and the energy of the induced photon should be equal to the energy difference between the electron transitions, generating photons that are identical and coherent with the induced photons.

[0007] 4) Different principles: Light-emitting diodes generate radiative recombination luminescence when electrons and holes jump to quantum wells or p-n junctions under the action of an external voltage. While lasers require lasing conditions to be met before lasing, and must satisfy the condition of inverted carrier distribution in the active region. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) The large lattice mismatch and strain inside cause a strong polarization effect, and the strong QCSE (Quantum Confined Stark Effect) strongly limits the improvement of the electrical lasing gain of lasers.

[0010] 2) High internal defect density and unsatisfactory crystal quality. A high dislocation density will reduce the lifespan of the laser, and the low luminescence efficiency of the quantum well;

[0011] 3) The valence band offset of the laser increases, making it more difficult for holes to transport in the quantum well, resulting in uneven carrier injection and uneven gain;

[0012] 4) The laser has a large operating current. A large current density generates a large amount of heat, and the poor heat dissipation of the device will exacerbate the thermal mismatch between semiconductor epitaxial layers, leading to problems such as an increase in threshold current and a decrease in slope efficiency. Summary of the Invention

[0013] The present invention proposes a gallium nitride-based third-generation semiconductor blue laser, which enables the multiplet exciton-induced layer to suppress the annihilation of triplet excitons, reduce triplet exciton dissipation, enhance triplet energy transfer, improve the generation efficiency of triplet excitons and the number of long-lived triplets, induce the radiative lasing of triplet excitons in the active layer of the laser element and singlet-triplet hybrid self-confined exciton luminescence, reduce the defect density, lower the excitation threshold of the laser element, and improve the quantum efficiency and aging lifespan in the quantum well.

[0014] A gallium nitride-based third-generation semiconductor blue laser provided by the present invention includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer from bottom to top. There is a multiplet exciton-induced layer between the lower waveguide layer and the lower confinement layer.

[0015] The multiplet exciton-induced layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 、BN, diamond, (C 8 H 22 N 2 Cl) 2 SnC l6 、Ca 3 (PO 4 ) 2 、Sr 8 CaGa(PO 4 ) 7 、WO 3 、Li 3 ErCl 6 、Li 3YBr 6 any one or any combination thereof;

[0016] The multiple exciton induction layer includes a first multiple exciton induction layer, a second multiple exciton induction layer, and a third multiple exciton induction layer.

[0017] Preferably, the Philip ionization degree distribution of the first multiple exciton induction layer has a function y = E + F * lnx / e x curve distribution; the Philip ionization degree distribution of the second multiple exciton induction layer has a function y = Ax 2 + Bx + C (A < 0) curve distribution; the Philip ionization degree distribution of the third multiple exciton induction layer has a function y = G + H * x -D (D > 1 odd) third quadrant curve distribution; the Philip ionization degree of the first multiple exciton induction layer is a, the Philip ionization degree of the second multiple exciton induction layer is b, and the Philip ionization degree of the third multiple exciton induction layer is c, where: 0.1 ≤ a ≤ b ≤ c ≤ 5.

[0018] Preferably, the breakdown field strength distribution of the first multiple exciton induction layer has a function y = I + J * lnx / x curve distribution; the breakdown field strength distribution of the second multiple exciton induction layer has a function y = K + L * lnx - M * e x curve distribution; the breakdown field strength distribution of the third multiple exciton induction layer has a function y = N + P * (e x + e -x ) / (e x - e -x ) third quadrant curve distribution; the breakdown field strength of the first multiple exciton induction layer is d, the breakdown field strength of the second multiple exciton induction layer is e, and the breakdown field strength of the third multiple exciton induction layer is f, where: 1E6 ≤ d ≤ e ≤ f ≤ 1E8 (V / cm).

[0019] Preferably, the dielectric constant distribution of the first multiple exciton induction layer has a function y = O + Q * x / e x curve distribution; the dielectric constant distribution of the second multiple exciton induction layer has a function y = R + S * e x sinx curve distribution; the dielectric constant distribution of the third multiple exciton induction layer has a function y = T + U * e x / x fourth quadrant curve distribution; the dielectric constant of the first multiple exciton induction layer is g, the dielectric constant of the second multiple exciton induction layer is h, and the dielectric constant of the third multiple exciton induction layer is i, where: 3 ≤ g ≤ h ≤ i ≤ 15.

[0020] Preferably, the polarization optical phonon energy distribution of the first multiplet exciton-induced layer has a function y = V + W * lnx / e x Curve distribution; the polarization optical phonon energy distribution of the second multiplet exciton-induced layer has a function y = Z + F2 * lnx - e x Curve distribution; the polarization optical phonon energy of the third multiplet exciton-induced layer has a function y = G2 + H2 * x / sinx fourth quadrant curve distribution; the polarization optical phonon energy of the first multiplet exciton-induced layer is j, the polarization optical phonon energy of the second multiplet exciton-induced layer is k, and the polarization optical phonon energy of the third multiplet exciton-induced layer is l, where: 20 ≤ j ≤ k ≤ l ≤ 300 (meV).

[0021] Preferably, the In / H element ratio distribution of the first multiplet exciton-induced layer has a function y = J2 + K2 * lnx / e x Curve distribution; the In / H element ratio distribution of the second multiplet exciton-induced layer has a function y = A2 * x 2 + B2 * x + C2 (A2 < 0) curve distribution; the In / H element ratio distribution of the third multiplet exciton-induced layer has a function y = x -D2 (D2 > 1 odd) third quadrant curve distribution.

[0022] Preferably, the In / O element ratio distribution of the first multiplet exciton-induced layer has a function y = L2 + M2 * lnx / x curve distribution; the In / O element ratio distribution of the second multiplet exciton-induced layer has a function y = N2 + P2 * lnx - e x Curve distribution; the In / O element ratio distribution of the third multiplet exciton-induced layer has a function y = Q2 + R2 * (e x + e -x ) / (e x - e -x ) third quadrant curve distribution; the In / C element ratio distribution of the first multiplet exciton-induced layer has a function y = S2 + T2 * x / e x Curve distribution; the In / C element ratio distribution of the second multiplet exciton-induced layer has a function y = U2 + V2 * e x sinx curve distribution; the In / C element ratio distribution of the third multiplet exciton-induced layer has a function y = W2 + Z2 * e x / x fourth quadrant curve distribution.

[0023] Preferably, the active layer is a periodic structure composed of well layers and barrier layers, where the number of periods satisfies 3≥m≥1. The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, with a thickness of 10 - 100 angstroms. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, with a thickness of 10 - 150 angstroms.

[0024] Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN.

[0025] Preferably, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , sapphire / SiO 2 / SiN x composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB2 , LiAlO 2 and LiGaO 2 Any one of the composite substrates.

[0026] Compared with the prior art, a gallium nitride-based third-generation semiconductor blue laser provided by an embodiment of the present invention has the following beneficial effects: The multiple exciton induction layer suppresses the annihilation of triplet excitons, reduces triplet exciton dissipation, enhances triplet energy transfer, improves the generation efficiency of triplet excitons and the number of long-lived triplets, induces the radiative lasing of triplet excitons on the active layer of the laser element and the luminescence of singlet-triplet hybrid self-confined excitons, reduces the excitation threshold of the laser element, reduces the defect density, improves the quantum efficiency and aging life in the quantum well. At the same time, the second multiple exciton induction layer enhances the Coulomb interaction to enhance the binding of electron-hole pairs, regulates the exciton polariton-exciton spatial overlap, induces the interaction between the polariton and the quantum well, improves the polarization effect and the quantum-confined stark effect, reduces the valence band offset, improves the hole injection and transport, enhances the confinement factor, and improves the heat dissipation efficiency, suppressing the problems of the increase in the threshold current and the decrease in the slope caused by the thermal mismatch, and improving the luminescence power and slope efficiency of the laser element. At the same time, the third multiple exciton induction layer strengthens the quantum coherence control of the spin-photon interface, combines the photon generation with the long-lived spin, enhances the coupling between the neighboring spin and the electron spin, regulates the coherence of the spin triplet excitons, and further enhances the beam quality factor of the laser and the quality of the far-field image FFP. Description of the Drawings

[0027] Figure 1 It is a schematic structural diagram of a gallium nitride-based third-generation semiconductor blue laser provided by the present invention.

[0028] Figure 2 It is a secondary ion mass spectrometry (SIMS) diagram of a gallium nitride-based third-generation semiconductor blue laser provided by the present invention.

[0029] Labels in the figure: 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer; 105: Upper confinement layer; 106: Multiple exciton induction layer; 106a: First multiple exciton induction layer; 106b: Second multiple exciton induction layer; 106c: Third multiple exciton induction layer. Detailed Embodiments

[0030] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0031] To solve the above problems, a gallium nitride-based third-generation semiconductor blue laser provided by an embodiment of the present application will be introduced and described in detail through the following specific embodiments.

[0032] Referring to Figure 1-2 , a gallium nitride-based third-generation semiconductor blue laser provided by the present invention includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A multiple exciton induction layer 106 is provided between the lower waveguide layer 102 and the lower confinement layer 101. The multiple exciton induction layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond; the multiple exciton induction layer 106 includes a first multiple exciton induction layer 106a, a second multiple exciton induction layer 106b, and a third multiple exciton induction layer 106c.

[0033] The Philips ionization degree distribution of the first multiple exciton induction layer 106a has a function y = E + F * lnx / e x curve distribution; the Philips ionization degree distribution of the second multiple exciton induction layer 106b has a function y = Ax 2 + Bx + C (A < 0) curve distribution; the Philips ionization degree distribution of the third multiple exciton induction layer 106c has a function y = G + H * x -D (D > 1 odd) third quadrant curve distribution; the breakdown field strength distribution of the first multiple exciton induction layer 106a has a function y = I + J * lnx / x curve distribution; the breakdown field strength distribution of the second multiple exciton induction layer 106b has a function y = K + L * lnx - M * e x curve distribution; the breakdown field strength distribution of the third multiple exciton induction layer 106c has a function y = N + P * (e x + e -x ) / (e x - e -x ) third quadrant curve distribution.

[0034] The present invention designs a multiplet exciton induction layer with a specific ionization degree distribution of Philips and a specific breakdown field strength distribution, enabling the multiplet exciton induction layer to suppress the annihilation of triplet excitons, reduce the dissipation of triplet excitons, enhance the triplet energy transfer, improve the generation efficiency of triplet excitons and the number of long-lived triplets, induce the radiative lasing of triplet excitons to the active layer of the laser element and the luminescence of singlet-triplet hybrid self-confined excitons, reduce the defect density, lower the excitation threshold of the laser element, and improve the quantum efficiency and aging life within the quantum well.

[0035] The dielectric constant distribution of the first multiplet exciton induction layer 106a has a function y = O + Q * x / e x Curve distribution; the dielectric constant distribution of the second multiplet exciton induction layer 106b has a function y = R + S * e x Sinx curve distribution; the dielectric constant distribution of the third multiplet exciton induction layer 106c has a function y = T + U * e x / x fourth quadrant curve distribution; the polar optical phonon energy distribution of the first multiplet exciton induction layer 106a has a function y = V + W * lnx / e x Curve distribution; the polar optical phonon energy distribution of the second multiplet exciton induction layer 106b has a function y = Z + F2 * lnx - e x Curve distribution; the polar optical phonon energy of the third multiplet exciton induction layer 106c has a function y = G2 + H2 * x / sinx fourth quadrant curve distribution.

[0036] The present invention designs a multiplet exciton induction layer with a specific dielectric constant distribution and a specific polar optical phonon energy distribution, enabling the multiplet exciton induction layer to enhance the Coulomb interaction, strengthen the binding of electron-hole pairs, regulate the spatial overlap of exciton polaritons - excitons, induce the interaction between polaritons and the quantum well, improve the polarization effect and the quantum-confined stark effect, lower the valence band offset, enhance the hole injection and transport, increase the confinement factor, and improve the heat dissipation efficiency, suppressing the problems of the increase in threshold current and the decrease in slope caused by thermal mismatch, and improving the luminescence power and slope efficiency of the laser element.

[0037] The In / H element ratio distribution of the first multiplet exciton induction layer 106a has a function y = J2 + K2 * lnx / e x Curve distribution; the In / H element ratio distribution of the second multiplet exciton induction layer 106b has a function y = A2 * x 2 + B2 * x + C2 (A2 < 0) curve distribution; the In / H element ratio distribution of the third multiplet exciton induction layer 106c has a function y = x -D2(D2 > 1, odd number) Third quadrant curve distribution; the In / O element ratio distribution of the first multiplet exciton induction layer 106a has a curve distribution of the function y = L2 + M2 * lnx / x; the In / O element ratio distribution of the second multiplet exciton induction layer 106b has a distribution of the function y = N2 + P2 * lnx - e x Curve distribution; the In / O element ratio distribution of the third multiplet exciton induction layer 106c has a distribution of the function y = Q2 + R2 * (e x + e -x ) / (e x - e -x ) Third quadrant curve distribution; the In / C element ratio distribution of the first multiplet exciton induction layer 106a has a curve distribution of the function y = S2 + T2 * x / e x Curve distribution; the In / C element ratio distribution of the second multiplet exciton induction layer 106b has a curve distribution of the function y = U2 + V2 * e x sinx curve distribution; the In / C element ratio distribution of the third multiplet exciton induction layer 106c has a curve distribution of the function y = W2 + Z2 * e x / x Fourth quadrant curve distribution.

[0038] By designing the specific element ratio distribution of the multiplet exciton induction layer, the present invention strengthens the quantum coherence control of the spin-photon interface, combines photon generation with long-lived spins, enhances the coupling between neighboring spins and electron spins, regulates the coherence of spin triplet excitons, and further enhances the beam quality factor of the laser and the quality of the far-field image FFP.

[0039] The Phillips ionization degree distribution of the first multiplet exciton induction layer 106a106a has a curve distribution of the function y = E + F * lnx / e x Curve distribution; the Phillips ionization degree distribution of the second multiplet exciton induction layer 106b has a curve distribution of the function y = Ax 2 + Bx + C (A < 0) curve distribution; the Phillips ionization degree distribution of the third multiplet exciton induction layer 106c has a curve distribution of the function y = x -D (D > 1, odd number) Third quadrant curve distribution; the breakdown field strength distribution of the first multiplet exciton induction layer 106a has a curve distribution of the function y = lnx / x; the breakdown field strength distribution of the second multiplet exciton induction layer 106b has a curve distribution of the function y = lnx - e x Curve distribution; the breakdown field strength distribution of the third multiplet exciton induction layer 106c has a curve distribution of the function y = (e x + e -x ) / (e x - e -x ) Third quadrant curve distribution.

[0040] The multiplet exciton-induced layer suppresses the annihilation of triplet excitons, reduces triplet exciton dissipation, enhances triplet energy transfer, improves the generation efficiency of triplet excitons and the number of long-lived triplets, induces radiative lasing of triplet excitons in the active layer of the laser element and singlet-triplet hybrid self-confined exciton luminescence, reduces the excitation threshold of the laser element, reduces the defect density, improves the quantum efficiency and aging life in the quantum well. At the same time, the second multiplet exciton-induced layer 106b enhances the Coulomb interaction to strengthen the binding of electron-hole pairs, regulates the spatial overlap of exciton polaritons-excitons, induces the interaction between polaritons and the quantum well, improves the polarization effect and the quantum-confined stark effect, reduces the valence band offset, enhances hole injection and transport, increases the confinement factor, and improves the heat dissipation efficiency, suppressing the problems of increased threshold current and decreased slope caused by thermal mismatch, and improving the luminescence power and slope efficiency of the laser element. At the same time, the third multiplet exciton-induced layer 106c strengthens the quantum coherence control of the spin-photon interface, combines photon generation with long-lived spins, enhances the coupling between neighboring spins and electron spins, regulates the coherence of spin triplet excitons, and further enhances the beam quality factor of the laser and the quality of the far-field image FFP.

[0041] Specifically, as shown in the following table, the data of the conventional laser and the laser of the present invention are compared.

[0042] Blue laser - project Traditional laser Laser of the present invention Variation range Slope efficiency (W / A) 0.8 1.57 96％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.76 -68％ Optical power (W) 4.1 12.9 215％ Optical power attenuation after 1000H aging 25.3％ 1.7％ -93％

[0043] In the present invention, the active layer 103 is a periodic structure composed of well layers and barrier layers, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, with a thickness of 10-100 angstroms, and the barrier layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3, any one or any combination of BN and diamond, with a thickness of 10 to 150 angstroms.

[0044] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , any one or any combination of BN.

[0045] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , sapphire / SiO 2 / SiN x composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 composite substrate, any one of them.

[0046] The above are only the preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the technical principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A gallium nitride-based third-generation semiconductor blue laser, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A multi-state exciton inducing layer (106) is provided between the lower waveguide layer (102) and the lower confinement layer (101), The multistate exciton inducing layer (106) is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, (C8H 22 N2Cl)2SnC l6 , Ca3(PO4)2, Sr8CaGa(PO4)7, WO3, Li3ErCl6, Li3YBr6, any one or any combination; The multistate exciton inducing layer (106) includes a first multistate exciton inducing layer (106a), a second multistate exciton inducing layer (106b) and a third multistate exciton inducing layer (106c).

2. A gallium nitride-based third-generation semiconductor blue laser according to claim 1, characterized in that: The Philips ionization degree distribution of the first multistate exciton inducing layer (106a) has a function y=E+F*lnx / e x Curve distribution; the second multi-state exciton inducing layer (106b) Philips ionization distribution has a function y = Ax 2 +Bx+C(A<0) curve distribution; the Philips ionization degree distribution of the third multistate exciton inducing layer (106c) has a function y=G+H*x -D (D>1 odd number) third quadrant curve distribution; the Philips ionization degree of the first multistate exciton inducing layer (106a) is a, the Philips ionization degree of the second multistate exciton inducing layer (106b) is b, and the Philips ionization degree of the third multistate exciton inducing layer (106c) is c, wherein: 0.1≤a≤b≤c≤5.

3. The gallium nitride-based third-generation semiconductor blue laser according to claim 1, characterized in that: The breakdown field intensity distribution of the first multi-state exciton inducing layer (106a) has a function y=I+J*lnx / x curve distribution; the breakdown field intensity distribution of the second multi-state exciton inducing layer (106b) has a function y=K+L*lnx-M*e x The breakdown field strength distribution of the third multi-state exciton inducing layer (106c) has a function y=N+P*(e x +e -x ) / (e x -e -x ) third quadrant curve distribution; the breakdown field strength of the first multistate exciton inducing layer (106a) is d, the breakdown field strength of the second multistate exciton inducing layer (106b) is e, and the breakdown field strength of the third multistate exciton inducing layer (106c) is f, wherein: 1E6≤d≤e≤f≤1E8 (V / cm).

4. The gallium nitride-based third-generation semiconductor blue laser according to claim 1, characterized in that: The dielectric constant distribution of the first multi-state exciton inducing layer (106a) has the function y=O+Q*x / e x Curve distribution; the dielectric constant distribution of the second multistate exciton inducing layer (106b) has a function y=R+S*e x sinx curve distribution; the dielectric constant distribution of the third multi-state exciton inducing layer (106c) has a function y=T+U*e x / x fourth quadrant curve distribution; the dielectric constant of the first multistate exciton inducing layer (106a) is g, the dielectric constant of the second multistate exciton inducing layer (106b) is h, and the dielectric constant of the third multistate exciton inducing layer (106c) is i, wherein: 3≤g≤h≤i≤15.

5. The gallium nitride-based third-generation semiconductor blue laser according to claim 1, characterized in that: The polari-optical phonon energy distribution of the first multi-state exciton inducing layer (106a) has a function y=V+W*lnx / e x Curve distribution; the polarization optical phonon energy distribution of the second multistate exciton inducing layer (106b) has a function y = Z + F2 * lnx-e x Curve distribution; the polarimetric phonon energy of the third multistate exciton inducing layer (106c) has a fourth quadrant curve distribution of the function y=G2+H2*x / sinx; the polarimetric phonon energy of the first multistate exciton inducing layer (106a) is j, the polarimetric phonon energy of the second multistate exciton inducing layer (106b) is k, and the polarimetric phonon energy of the third multistate exciton inducing layer (106c) is l, wherein: 20≤j≤k≤l≤300 (meV).

6. The gallium nitride-based third-generation semiconductor blue laser according to claim 1, characterized in that: The In / H element ratio distribution of the first multi-state exciton inducing layer (106a) has a function y=J2+K2*lnx / e x Curve distribution; the In / H element ratio distribution of the second multistate exciton inducing layer (106b) has a function y=A2*x 2 +B2*x+C2(A2<0) curve distribution; the In / H element ratio distribution of the third multi-state exciton inducing layer (106c) has a function y=x -D2 (D2>1 odd number) third quadrant curve distribution.

7. The gallium nitride-based third-generation semiconductor blue laser according to claim 1, characterized in that: The In / O element ratio distribution of the first multi-state exciton inducing layer (106a) has a function y=L2+M2*lnx / x curve distribution; the In / O element ratio distribution of the second multi-state exciton inducing layer (106b) has a function y=N2+P2*lnx-e x Curve distribution; the In / O element ratio distribution of the third multi-state exciton inducing layer (106c) has a function y=Q2+R2*(e x +e -x ) / (e x -e -x ) The third quadrant curve distribution; the In / C element ratio distribution of the first multi-state exciton inducing layer (106a) has a function y=S2+T2*x / e x Curve distribution; The In / C element ratio distribution of the second multistate exciton inducing layer (106b) has a function y=U2+V2*e x sinx curve distribution; the In / C element ratio distribution of the third multistate exciton induction layer (106c) has a function y=W2+Z2*e x / xFourth quadrant curve distribution.

8. The gallium nitride-based third-generation semiconductor blue laser according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 150 angstroms.

9. The gallium nitride-based third-generation semiconductor blue laser according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

10. The gallium nitride-based third-generation semiconductor blue laser according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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