Memristor array and preparation method and application thereof

Abstract

The invention belongs to the technical field of information storage, and particularly relates to a memristor array and a preparation method and application thereof. The invention provides a memristor array which comprises a plurality of top electrodes arranged in parallel and a plurality of bottom electrodes arranged in parallel, and the top electrodes and the bottom electrodes are perpendicular to each other. A memristor unit is arranged at the cross point of the top electrode and the bottom electrode; and the memristor unit is made of an organic-inorganic hybrid quasi-two-dimensional perovskite material. The memristor array provided by the invention is relatively simple in structure while having relatively high stability, is beneficial to array integrated application, and can change the conductivity state of the memristor array by changing the magnitude of voltage to realize an information storage function.

Description

Technical Field

[0001] The present invention belongs to the technical field of information storage, and particularly relates to a memristor array, a preparation method thereof, and an application thereof. Background Art

[0002] In the current process of technological development, edge systems and cloud computing technologies have emerged vigorously. Along with this trend, data generation has shown an exponential and rapid growth trend, which poses unprecedentedly stringent requirements on the performance of computing devices and storage devices. At the same time, this growth trend has also strongly promoted the continuous emergence of many new application scenarios.

[0003] Most traditional computing systems are based on the von Neumann architecture. However, this architecture faces the insurmountable challenge of the "memory wall". The design in which its computing unit and storage unit are physically separated inevitably leads to high latency problems during data transmission, and consumes excessive power during operation, severely restricting the overall performance and efficiency of the system and making it difficult to meet the actual needs of current data processing.

[0004] To solve the above problems, inspired by the working principle of the biological nervous system, the neuromorphic computing architecture has emerged. This architecture has the ability of parallel processing and distributed storage, and its working mode is more in line with the operating mechanism of the human brain. By simulating the connection mode between neurons and the signal transmission process, neuromorphic computing can achieve a series of intelligent behaviors such as learning, memory, and perception, bringing new hope for breaking through the data transmission bottleneck of the traditional architecture.

[0005] In recent years, memristors have become an innovative hardware solution for realizing high-density integration and low-power neuromorphic computing systems due to their unique non-volatile resistance switching behavior and non-linear electrical characteristics. Currently, a large number of research reports have adopted different materials as the resistive switching functional layer of memristors, such as metal oxides, two-dimensional materials, chalcogenides, etc., and the physical mechanisms of memristors composed of these materials have been deeply explored and studied.

[0006] The emerging halide perovskite memristors are widely regarded as potential candidates for memristive devices due to their excellent hysteresis effect, fast ion migration ability, and good solution processability. Among them, organic-inorganic hybrid halide perovskites have attracted extensive attention and great interest in the scientific research community due to their excellent optical properties and charge transport properties, and easy synthesis. The inherent hybrid structure of this type of perovskite helps to achieve a tunable bandgap, controllable carrier concentration, and fast ion migration, and these characteristics are crucial for memristors to achieve resistive switching behavior.

[0007] However, the manufacturing cost of memristors in the prior art is relatively high and the manufacturing process is complex. How to reduce the manufacturing cost of memristors and simplify the manufacturing process of memristors has become a technical problem to be solved urgently in this field. Summary of the Invention

[0008] To solve the problems of high manufacturing cost and complex manufacturing process of memristors in the prior art, the present invention provides a memristor array, a manufacturing method thereof and an application.

[0009] The memristor array provided by the present invention includes a plurality of top electrodes arranged in parallel and a plurality of bottom electrodes arranged in parallel, and the top electrodes and the bottom electrodes are arranged perpendicular to each other; A memristor unit is arranged at the intersection of the top electrode and the bottom electrode; The memristor unit is an organic-inorganic hybrid quasi-two-dimensional perovskite material.

[0010] The memristor array provided by the present invention has high stability, a relatively simple structure, is conducive to array integration applications, and can also change its own conductance state by changing the voltage magnitude to achieve the information storage function.

[0011] Preferably, the organic-inorganic hybrid quasi-two-dimensional perovskite material is (C 8 H 11 N) 2 Cs 3 Pb 4 I 13 .

[0012] In the present invention, (C 8 H 11 N) + is a large-volume organic cation, which can effectively inhibit ion migration and improve the stability of the memristor array. At the same time, the benzene ring in (C 8 H 11 N) + has good hydrophobicity, and the ammonium group has good coordination ability, which can passivate the surface defects of perovskite. In addition, Cs⁺ as a small-size inorganic cation can be co-doped with (C 8 H 11 N)⁺ to optimize lattice matching.

[0013] Preferably, the bottom electrode includes an electrode part and a substrate part, the material of the electrode part is selected from ITO or FTO, and the material of the substrate part is quartz glass.

[0014] Preferably, the material of the top electrode is selected from Ag or Al.

[0015] Preferably, the thickness of the bottom electrode is 100 nm - 200 nm, the thickness of the top electrode is 100 nm - 400 nm, and the thickness of the memristor unit is 350 nm - 400 nm.

[0016] The present invention also provides a method for preparing the memristor array according to the above solution, comprising the following steps: Step 1: Provide a hydrophilically pretreated bottom electrode, a substrate, and an organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution; Step 2: In an inert gas environment, spin-coat the organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution on the hydrophilically pretreated bottom electrode, and then perform annealing treatment to obtain a semi-finished material; Step 3: Prepare a top electrode on the semi-finished material by physical vapor deposition to obtain the memristor array.

[0017] In the method for preparing the memristor array provided by the present invention, raw materials with high prices are not used. At the same time, all raw materials can be commercially purchased and can be used without synthesis or further purification, and the cost is low. At the same time, the preparation process provided by the present invention is fast and simple, and a memristor array with good comprehensive performance can be prepared without a complex preparation process.

[0018] Preferably, the method for preparing the hydrophilically pretreated bottom electrode comprises the following steps: Put the bottom electrode and the substrate into a container, add a glass cleaning agent and ultrapure water, ultrasonically bath the container for 220 - 260 min, take out the container, repeatedly rinse it with ultrapure water 3 - 4 times until the ultrapure water is clear and transparent in the beaker, pour out the ultrapure water, then add acetone and alcohol in sequence, ultrasonically bath them for 15 - 25 min respectively, take out the bottom electrode, dry it with nitrogen, and then treat it with an equi-quantum corona machine for 2 - 3 min to obtain the hydrophilically pretreated bottom electrode.

[0019] Preferably, the method for preparing the organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution comprises the following steps: In an inert atmosphere, mix CH 8 NI, CsI, PbI 11 with N,N-dimethylformamide and stir for 450 - 500 min to obtain the organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution. 2

[0020] Preferably, the molar ratio of C 8 H 11 NI, CsI and PbI 2 is 1:1:1.

[0021] ​Preferably, in step two, the spin coating speed is 5500 - 6500 rpm and the time is 40 - 50 s.

[0022] Preferably, in step two, the annealing temperature is 140 - 160 °C and the time is 250 - 350 s.

[0023] Preferably, in step three, the deposition rate of physical vapor deposition is 1.5 - 2.5 Å / s and the vacuum degree ≤ 5.0e -6 .

[0024] The present invention also provides an application of the memristor array of the above solution or the memristor array prepared by the above preparation method in neuromorphic computing.

[0025] In summary, the memristor array provided by the present invention has high stability, a relatively simple structure, which is beneficial to array integration applications. It can also change its own conductance state by changing the voltage magnitude to achieve the information storage function. At the same time, in the preparation method of the memristor array provided by the present invention, high - price raw materials are not used, and the raw materials can all be commercially purchased and can be used without synthesis or further purification, with low cost. Moreover, the preparation process is fast and simple without a complex preparation process. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic structural diagram of the memristor array of the present invention.

[0027] Figure 2 It is a physical diagram of the memristor array of the present invention.

[0028] Figure 3 It is an SEM morphological image of the memristor unit of the memristor array in Example 1 of the present invention.

[0029] Figure 4 It is an AFM morphological image of the memristor unit of the memristor array in Example 1 of the present invention.

[0030] Figure 5 It is a current - voltage curve graph of the memristor array in Example 1.

[0031] Figure 6 It is a current - voltage curve graph of the memristor array in Example 2.

[0032] Figure 7 It is a current - voltage curve graph of the memristor array in Example 3.

[0033] Figure 8 It is a current - voltage curve graph of the memristor array in Comparative Example 1.

[0034] Figure 9Current-voltage curve of the memristor array in Comparative Example 2. Detailed implementation mode

[0035] The memristor array provided by the present invention, as Figure 1 and 2 shown, the memristor array includes a bottom electrode, a memristor unit and a top electrode from bottom to top. Among them, the bottom electrode material is selected from ITO or FTO, and the thickness is 100nm - 200nm; the top electrode material is selected from Ag or Al, and the thickness is 100nm - 400nm; the memristor unit is an organic-inorganic hybrid quasi-two-dimensional perovskite material, and the organic-inorganic hybrid quasi-two-dimensional perovskite material is (C 8 H 11 N) 2 Cs 3 Pb 4 I 13 , and the thickness is 350nm - 400nm The memristor array provided by the present invention includes a substrate, and a bottom electrode is arranged on the substrate, and the substrate is quartz glass.

[0036] Next, the technical solutions in the embodiments of the present invention will be described clearly and completely. Obviously, the described embodiments are only one embodiment of the present invention, rather than all embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention. Embodiment 1

[0037] This embodiment provides a method for preparing a memristor array machine, which specifically includes the following contents: The memristor array includes three parallel top electrodes and three parallel bottom electrodes, and the top electrodes and the bottom electrodes are arranged perpendicular to each other; A memristor unit is arranged at the intersection of the top electrode and the bottom electrode; The bottom electrode includes an electrode part and a substrate part, the material of the electrode part is ITO, the material of the substrate part is quartz glass, and the thickness of the bottom electrode is 100nm; The top electrode material is Ag, and the top electrode thickness is 100nm; The memristor unit is (C 8 H 11 N) 2 Cs 3 Pb 4 I 13 , and the thickness of the memristor unit is 350nm.

[0038] The preparation method of the memristor array includes the following steps: Step 1: Place the bottom electrode and the substrate in a container, add glass cleaning agent and ultrapure water, ultrasonically bath the container for 220 min, take out the container, repeatedly rinse it with ultrapure water for 3 times until the ultrapure water is clear and transparent in the beaker. After pouring out the ultrapure water, add acetone and alcohol in sequence, ultrasonically bath for 15 min respectively, take out the bottom electrode, dry it with nitrogen, and then treat it with an equimolar corona machine for 2 min to obtain a hydrophilically pre-treated bottom electrode; In an inert atmosphere, C 8 H 11 NI, CsI and PbI 2 are mixed with N,N-dimethylformamide in a molar ratio of 1:1:1 and stirred for 450 min to obtain an organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution.

[0039] Step 2: Under an inert gas environment, spin-coat 200 μL of the organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution on the hydrophilically pre-treated bottom electrode, and then anneal it at 140 °C for 250 s to obtain a semi-finished material, where the spin-coating speed is 5500 rpm and the time is 40 s.

[0040] Step 3: Prepare the top electrode on the semi-finished material by physical vapor deposition to obtain a memristor array, where the deposition rate of physical vapor deposition is 1.5 Å / s and the vacuum degree ≤ 5.0e -6 .

[0041] Observe the SEM morphology and AFM morphology of the memristor units in the memristor array in Example 1. The obtained SEM morphology diagram is as Figure 3 shown, and the obtained AFM morphology diagram is as Figure 4 shown.

[0042] It can be seen from Figure 3 that Figure 3 the quasi-two-dimensional perovskite in usually presents a layered or flaky structure and has very obvious characteristics of the quasi-two-dimensional perovskite thin film. It can be seen from Figure 3 that at a scale of 1 μm * 1 μm, the thin film of the memristor units in the memristor array in Example 1 is uniform, continuous, has a high coverage rate and a low pinhole density.

[0043] It can be seen from Figure 4 that the nanoscale flat surface reduces the contact potential barrier at the electrode / perovskite interface, and the surface of the quasi-two-dimensional perovskite thin film is relatively flat, which is conducive to the uniform coverage of the electrode and reduces the short-circuit risk during the evaporation of the metal electrode. Example 2

[0044] This example provides a method for manufacturing a memristor array machine, which specifically includes the following contents: The memristor array includes three top electrodes arranged in parallel and three bottom electrodes arranged in parallel, with the top electrodes and the bottom electrodes being perpendicularly arranged with respect to each other; Memristor units are provided at the intersection points of the top electrodes and the bottom electrodes; The bottom electrode includes an electrode portion and a substrate portion. The material of the electrode portion is FTO, the material of the substrate portion is quartz glass, and the thickness of the bottom electrode is 200 nm; The material of the top electrode is Al, and the thickness of the top electrode is 400 nm; The memristor unit is (C 8 H 11 N) 2 Cs 3 Pb 4 I 13 , and the thickness of the memristor unit is 400 nm.

[0045] The preparation method of the memristor array includes the following steps: Step 1: Place the bottom electrode and the substrate in a container, add glass cleaning agent and ultrapure water, ultrasonically bath the container for 260 min, then take out the container, repeatedly rinse it 4 times with ultrapure water until the ultrapure water in the beaker is clear and transparent. After pouring out the ultrapure water, add acetone and alcohol in sequence, ultrasonically for 25 min respectively, then take out the bottom electrode, dry it with nitrogen, and treat it with an isometric corona machine for 2 min to obtain a hydrophilically pre-treated bottom electrode; In an inert atmosphere, mix C 8 H 11 NI, CsI, and PbI 2 in a molar ratio of 1:1:1 with N,N-dimethylformamide, and stir for 500 min to obtain an organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution.

[0046] Step 2: Under an inert gas environment, spin-coat 200 μL of the organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution on the hydrophilically pre-treated bottom electrode, and then anneal it at 160 °C for 350 s to obtain a semi-finished material, where the spin-coating speed is 6500 rpm and the time is 50 s.

[0047] Step 3: Prepare the top electrode on the semi-finished material by physical vapor deposition to obtain the memristor array, where the deposition rate of the physical vapor deposition is 2.5 Å / s and the vacuum degree ≤ 5.0e -6 . Example 3

[0048] This example provides a method for fabricating a memristor array machine, which specifically includes the following content: The memristor array includes three top electrodes arranged in parallel and three bottom electrodes arranged in parallel, with the top electrodes and the bottom electrodes being perpendicularly arranged with respect to each other; A memristor unit is arranged at the intersection of the top electrode and the bottom electrode; The bottom electrode includes an electrode part and a substrate part. The material of the electrode part is ITO, the material of the substrate part is quartz glass, and the thickness of the bottom electrode is 150 nm; The material of the top electrode is Ag, and the thickness of the top electrode is 200 nm; The memristor unit is (C 8 H 11 N) 2 Cs 3 Pb 4 I 13 , and the thickness of the memristor unit is 370 nm.

[0049] The preparation method of the memristor array includes the following steps: Step 1: Place the bottom electrode and the substrate in a container, add glass cleaning agent and ultrapure water, ultrasonically bath the container for 240 min, take out the container, repeatedly rinse it 3 times with ultrapure water until the ultrapure water in the beaker is clear and transparent. After pouring out the ultrapure water, add acetone and alcohol in turn, ultrasonically for 20 min respectively, take out the bottom electrode, dry it with nitrogen, and then treat it with an isometric corona machine for 2.5 min to obtain a hydrophilically pre-treated bottom electrode; In an inert atmosphere, mix C 8 H 11 NI, CsI and PbI 2 in a molar ratio of 1:1:1 with N,N-dimethylformamide and stir for 640 min to obtain an organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution.

[0050] Step 2: In an inert gas environment, spin-coat 200 μL of the organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution on the hydrophilically pre-treated bottom electrode, and then anneal it at 100 °C for 300 s to obtain a semi-finished material, where the spin-coating speed is 6000 rpm and the time is 45 s.

[0051] Step 3: Prepare the top electrode on the semi-finished material by physical vapor deposition to obtain a memristor array, where the deposition rate of the physical vapor deposition is 2.0 Å / s and the vacuum degree ≤ 5.0e -6 . Comparative Example 1

[0052] This example provides a method for fabricating a memristor array machine, which specifically includes the following content: The memristor array includes three parallel top electrodes and three parallel bottom electrodes, and the top electrodes and the bottom electrodes are arranged perpendicular to each other; A memristor unit is arranged at the intersection of the top electrode and the bottom electrode; The bottom electrode material is Si, and the thickness of the bottom electrode is 100 nm; The top electrode material is Ag, and the thickness of the top electrode is 100 nm; The memristor unit is (C 8 H 11 N) 2 Cs 3 Pb 4 I 13 , and the thickness of the memristor unit is 350 nm; The bottom electrode is disposed on a substrate, and the substrate is Cu.

[0053] The preparation method of the memristor array includes the following steps: Step 1: Place the bottom electrode and the substrate in a container, add glass cleaning agent and ultrapure water, ultrasonically bath the container for 240 min, take out the container, repeatedly rinse it 3 times with ultrapure water until the ultrapure water in the beaker is clear and transparent, pour out the ultrapure water, then add acetone and alcohol in sequence, ultrasonically treat each for 20 min, take out the bottom electrode, dry it with nitrogen, and then treat it with an equi-quantum corona machine for 2.5 min to obtain a hydrophilic pre-treated bottom electrode; In an inert atmosphere, C 8 H 11 NI, CsI and PbI 2 are mixed with N,N-dimethylformamide in a molar ratio of 1:1:1 and stirred for 640 min to obtain an organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution.

[0054] Step 2: In an inert gas environment, spin-coat 200 μL of the organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution on the hydrophilic pre-treated bottom electrode, and then anneal it at 100 °C for 300 s to obtain a semi-finished material, where the spin-coating speed is 6000 rpm and the time is 45 s.

[0055] Step 3: Prepare the top electrode on the semi-finished material by physical vapor deposition to obtain a memristor array, where the deposition rate of the physical vapor deposition is 2.0 Å / s and the vacuum degree ≤ 5.0e -6 . Comparative Example 2

[0056] This embodiment provides a method for fabricating a memristor array machine, which specifically includes the following content: The memristor array includes three parallel top electrodes and three parallel bottom electrodes, and the top electrodes and the bottom electrodes are arranged perpendicular to each other; A memristor unit is provided at the intersection of the top electrode and the bottom electrode; The bottom electrode material is Si, and the thickness of the bottom electrode is 100 nm; The top electrode material is Al and the thickness of the top electrode is 100 nm; The memristor unit is (C 8 H 11 N) 2 Cs 3 Pb 4 I 13 , and the thickness of the memristor unit is 350 nm; The bottom electrode is disposed on a substrate, and the substrate is Cu.

[0057] The preparation method of the memristor array includes the following steps: Step 1: Place the bottom electrode and the substrate in a container, add glass cleaning agent and ultrapure water, ultrasonically bath the container for 240 min, take out the container, repeatedly rinse it 3 times with ultrapure water until the ultrapure water in the beaker is clear and transparent, pour out the ultrapure water, then add acetone and alcohol in turn, ultrasonically for 20 min respectively, take out the bottom electrode, dry it with nitrogen, and then treat it with an isometric corona machine for 2.5 min to obtain a hydrophilically pre-treated bottom electrode; In an inert atmosphere, mix C 8 H 11 NI, CsI and PbI 2 with N,N-dimethylformamide in a molar ratio of 1:1:1, and stir for 640 min to obtain an organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution.

[0058] Step 2: In an inert gas environment, spin-coat 200 μL of the organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution on the hydrophilically pre-treated bottom electrode, and then anneal it at 100 °C for 300 s to obtain a semi-finished material, where the spin-coating speed is 6000 rpm and the time is 45 s.

[0059] Step 3: Prepare the top electrode on the semi-finished material by physical vapor deposition to obtain a memristor array, where the deposition rate of the physical vapor deposition is 2.0 Å / s and the vacuum degree ≤ 5.0e -6 .

[0060] For the memristor arrays in Examples 1-3 and Comparative Examples 1-2, use a Keithley 2400 source meter to measure the current in the order of 0 V to 1.2 to -1.2 V to 0 V using a LabView program, and the obtained current-voltage curves are as Figures 5 - 9 shown. Among them Figure 5 is the current-voltage curve graph of the memristor array in Example 1, Figure 6 is the current-voltage curve graph of the memristor array in Example 2, Figure 7 is the current-voltage curve graph of the memristor array in Example 3, Figure 8The current-voltage curve diagram of the memristor array in Comparative Example 1 Figure 9 The current-voltage curve diagram of the memristor array in Comparative Example 2

[0061] From Figure 5 It can be seen that the memristor array in Embodiment 1 of the present invention exhibits very obvious and representative memristive characteristics, and its switching ratio is about 10 6 , which is much higher than the commercial 10 1 . The high switching ratio enables a higher signal noise tolerance during information reading, improving the signal anti-interference ability. At the same time, the operating voltage of the memristor array in Embodiment 1 is less than 1V, reducing the power consumption of the information storage hardware and extending the usage time of the information storage device.

[0062] From Figure 6 It can be seen that the switching ratio of the memristor array in Embodiment 2 of the present invention is also about 10 6 , but the device shows a high degree of asymmetry in the forward voltage and the negative voltage. This enables the write operation of the device to be completed through a forward pulse and the erasure to be achieved through a negative pulse, without the need for an additional logic control module, reducing the usage requirements of the information storage device.

[0063] From Figure 7 It can be seen that the memristor array in Embodiment 3 of the present invention exhibits a secondary mutation phenomenon at the forward voltage. This enables the device to have a multi-level resistance state control ability. By adjusting the amplitudes of the positive and negative voltages, the memristor can be programmed to ≥3 resistance states, enhancing the information storage ability of each unit. At the same time, the multi-level resistance state is the core characteristic that differentiates the memristor from traditional binary memories. By precisely controlling the resistance state of the device, the storage density can be doubled and the energy efficiency of neuromorphic computing can be improved.

[0064] From Figure 8 It can be seen that the forward and reverse current-voltage curves of the memristor array in Comparative Example 1 of the present invention almost completely overlap, and there is almost no memristive characteristic.

[0065] From Figure 8 It can be seen that the memristor array in Comparative Example 2 of the present invention exhibits a non-linear memristive characteristic, but it is not obvious.

[0066] The above are all the preferred embodiments of this application. The protection scope of this application is not limited accordingly. Therefore, all equivalent changes made according to the structure, shape, and principle of this application should be covered within the protection scope of this application.

Claims

1. A memristor array, characterized in that: It comprises a plurality of top electrodes arranged in parallel and a plurality of bottom electrodes arranged in parallel, wherein the top electrodes and the bottom electrodes are arranged perpendicular to each other; A memristor unit is provided at the intersection of the top electrode and the bottom electrode; The memristor unit is an organic-inorganic hybrid quasi-two-dimensional perovskite material.

2. The memristor array according to claim 1, characterized in that: The organic-inorganic hybrid quasi-two-dimensional perovskite material is (C8H 11 N) 2Cs3Pb4I 13 .

3. The memristor array according to claim 1, characterized in that: The bottom electrode comprises an electrode part and a substrate part. The material of the electrode part is selected from ITO or FTO, and the material of the substrate part is quartz glass.

4. The memristor array according to claim 1, characterized in that: The bottom electrode material is selected from ITO or FTO, and the top electrode material is selected from Ag or Al.

5. The memristor array according to claim 1, characterized in that: The thickness of the bottom electrode is 100nm-200nm, the thickness of the top electrode is 100nm-400nm, and the thickness of the memristor unit is 350nm-400nm.

6. The method for preparing the memristor array according to any one of claims 1 to 5, characterized in that: The following steps are involved: Step 1: providing a hydrophilic pretreated bottom electrode and substrate and an organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution; Step 2: In an inert gas environment, spin-coat an organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution onto a hydrophilic pretreated bottom electrode, and then perform annealing to obtain a semi-finished material; Step 3: Prepare a top electrode on the semi-finished material by physical vapor deposition to obtain the memristor array.

7. The method for preparing a memristor array according to claim 6, characterized in that: The method for preparing the hydrophilic pretreated bottom electrode comprises the following steps: The bottom electrode and substrate are placed in a container, and glass cleaner and ultrapure water are added. After the container is ultrasonicated in a water bath for 220-260 minutes, the container is taken out and repeatedly rinsed with ultrapure water for 3-4 times until the ultrapure water is clear and transparent in the beaker. After pouring out the ultrapure water, acetone and alcohol are added in sequence, and ultrasonicated for 15-25 minutes respectively. The bottom electrode is taken out, blown dry with nitrogen, and treated with an isoquantum corona machine for 2-3 minutes to obtain the hydrophilic pretreated bottom electrode.

8. The method for preparing a memristor array according to claim 6, characterized in that: The method for preparing the organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution comprises the following steps: In an inert atmosphere, C8H 11 NI, CsI, PbI2 and N,N-dimethylformamide are mixed and magnetically stirred for 450-500 minutes to obtain the organic-inorganic hybrid quasi-two-dimensional perovskite precursor solution.

9. The method for preparing a memristor array according to claim 8, characterized in that: The C8H 11 The molar ratio of NI, CsI and PbI2 is 1:1:1; and / or The C8H 11 The molar volume ratio of NI to N,N-dimethylformamide is 1 mol: (1-5) mL.

10. Application of the memristor array prepared by the memristor array according to any one of claims 1 to 5 or the method for preparing the memristor array according to any one of claims 6 to 9 in neuromorphic computing.

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