Semiconductor module and method for manufacturing semiconductor module

Abstract

The invention provides a semiconductor module which is miniaturized and thinned. This semiconductor module (1) is provided with: a substrate (10) having a wiring section (12) formed on at least one surface, and a hole section (13) having an opening on at least one surface side; and at least one semiconductor package (20, 30) having a main body section (21) disposed on one surface side of the substrate (10) and sealed with a resin, and a plate-shaped lead section (22) extending outward from a side surface of the main body section (21), in any one of the at least one semiconductor package (20, 30), a part of the main body section (21) is inserted into the hole section (13), and a part of the lead section (22) is inserted into the hole section (13). The lead part 22 extends along the surface of the substrate 10, and the lower surface of the lead part 22 is bonded to the wiring part 12.

Description

Technical Field

[0001] The present invention relates to a semiconductor module and a method for manufacturing the semiconductor module. Background Art

[0002] Conventionally, a semiconductor module in which a plurality of semiconductor packages are mounted is known (for example, refer to Patent Document 1). As a semiconductor package for such a semiconductor module, an insertion-type semiconductor package having lead portions linearly extending outward from the side surface of a main body portion and a surface-mount type semiconductor package in which the lead portions are bent in a Z-shape or the like midway are known.

[0003] In order to mount an insertion-type semiconductor package (bonded to a substrate), for example, the linearly extending lead portions are immersed in molten solder and inserted into through holes provided on the substrate, thereby bonding to the substrate. On the other hand, in order to mount a surface-mount type semiconductor package (bonded to a substrate), for example, the lead portions are arranged via solder paste or the like on a wiring portion (electrode pad) of the substrate and reflowed, thereby bonding to the substrate.

[0004] In recent years, as the number of cases where electronic components are mounted on both sides of a substrate has increased, the surface-mount type that can be mounted on both sides of the substrate has gradually become mainstream. However, there are still actual situations where insertion-type semiconductor packages are used, and there are also many cases where insertion-type semiconductor packages are used.

[0005] As a semiconductor module using an insertion-type semiconductor package, for example, the following semiconductor module (existing first semiconductor module 900) is known.

[0006] As shown in Figure 8 the existing first semiconductor module 900 has: a substrate 910 having a wiring portion 912 and a through hole 914 formed on one surface; two semiconductor packages 920, 930 having resin-sealed main body portions 921, 931 and lead portions 922, 932 extending outward from the side surfaces of the main body portions 921, 931; and other semiconductor packages 940. The two semiconductor packages 920, 930 are insertion-type semiconductor packages, and the other semiconductor package 940 is a surface-mount type semiconductor package.

[0007]

Prior Art Documents

[0008]

Patent Document 1

[0009] However, in the above prior art, since the lead portions of the insertion-type semiconductor package are arranged perpendicular to the surface of the substrate, there is a problem in that it is difficult to miniaturize and thin the semiconductor module.

[0010] In the technical field of semiconductor modules, semiconductor modules that are required to be miniaturized and thinned are demanded. However, even when the lead portions of an insert-type semiconductor package extend along the surface of a substrate rather than in a direction perpendicular to the surface of the substrate, the lead portions are bent and mounted laterally (see Figure 9 ), so that a height lower than the thickness of the semiconductor package cannot be achieved, and thus a miniaturized and low-profile semiconductor module cannot be realized.

[0011] In addition, when a common heat sink is used for two semiconductor packages, in order to adjust the mounting height from the substrate to the same height, it is necessary to insert a spacer between the semiconductor package and the substrate (see Figures 9 to 12 ), or process the heat sink (see Figures 10 to 12 of the heat sink 950a), so that it becomes more difficult to realize a miniaturized and thinned semiconductor module.

[0012] The present invention has been made in view of the above circumstances, and an object thereof is to provide a miniaturized and thinned semiconductor module. Summary of the Invention

[0013] The semiconductor module of the present invention includes: a substrate having a wiring portion formed on at least one surface and a hole portion having an opening at least on the one surface side; and at least one semiconductor package disposed on the one surface side of the substrate and having a main body portion sealed with resin and a plate-like lead portion extending outward from a side surface of the main body portion. In any one of at least one of the semiconductor packages, a part of the main body portion is inserted into the hole portion, the lead portion extends along the surface of the substrate, and a lower surface of the lead portion is joined to the wiring portion.

[0014] Advantages of the Invention

[0015] According to the semiconductor module of the present invention, since the substrate having a hole portion with an opening formed on at least one surface side is provided, in at least one semiconductor package, a part of the main body portion is inserted into the hole portion, the lead portion extends at a height position along the surface of the substrate, and the lower surface of the lead portion is joined to the wiring portion, it is possible to join the lower surface of the lead portion and the wiring without bending the lead portion of the insert-type semiconductor package.

[0016] In addition, according to the semiconductor module of the present invention, since a part of the main body portion is inserted into the hole portion in any one of at least one of the semiconductor packages, a height lower than the thickness of the semiconductor package can be achieved, and a miniaturized and low-profile semiconductor module can be formed. Brief Description of the Drawings

[0017] Figure 1 is a side sectional view of the semiconductor module 1 according to Embodiment 1.

[0018] Figure 2 It is a diagram of the semiconductor package 20 for a rectifier in Embodiment 1. Figure 2 (a) is a side cross-sectional view of the semiconductor package 20 for rectification, Figure 2 (b) is a top view of the semiconductor package 20 for rectification, Figure 2 (c) is a diagram of the internal structure of the semiconductor package 20 for rectification.

[0019] Figure 3 It is a side cross-sectional view of the semiconductor module 2 in Embodiment 2.

[0020] Figure 4 It is the control semiconductor package 30a in Embodiment 2. Figure 4 (a) is a side sectional view of the control semiconductor package 30a, and Figure 4 (b) is a plan view of the control semiconductor package 30a.

[0021] Figure 5 It is a side cross-sectional view of the semiconductor module 3 in Embodiment 3.

[0022] Figure 6 It is a side cross-sectional view of the semiconductor module 4 in Embodiment 4.

[0023] Figure 7 It is the control semiconductor package 30b in the embodiment. Figure 7 (a) is a side cross-sectional view of the control semiconductor package 30b, Figure 7 (b) is a top view of the control semiconductor package 30b.

[0024] Figure 8 It is a side sectional view of the existing first semiconductor module 900.

[0025] Figure 9 It is a side cross-sectional view of the second semiconductor module of the prior art.

[0026] Figure 10 It is a side sectional view of the existing third semiconductor module 902 of the prior art.

[0027] Figure 11 It is a side sectional view of the fourth semiconductor module of the prior art.

[0028] Figure 12 It is a side sectional view of the fifth semiconductor module of the prior art.

[0029] Figure 13 It is a side cross-sectional view of the manufacturing method of the semiconductor module in Embodiment 5. Detailed implementation mode

[0030] Hereinafter, the semiconductor module and the manufacturing method of the semiconductor module of the present invention will be described according to the embodiments shown in the drawings. The embodiments described below do not limit the invention of the appended claims. In addition, all the elements and combinations described in the embodiments are not necessarily required for the solution means of the present invention.

[0031]

Embodiment 1

[0032] 1. Structure of the semiconductor module 1 of Embodiment 1

[0033] As Figure 1 shown, the semiconductor module 1 according to Embodiment 1 includes: a substrate 10, two semiconductor packages (a rectifying semiconductor package 20 and a control semiconductor package 30), another semiconductor package 40, and a heat sink 50.

[0034] The substrate 10 has an insulating substrate 11, a wiring portion 12, and a hole portion 13. As the substrate 10, for example, a printed circuit board can be used, but a ceramic substrate or other appropriate wiring substrates can also be used.

[0035] The insulating substrate 11 is, for example, an insulating substrate made of glass epoxy resin, but can also be an insulating substrate made of ceramic, or other appropriate insulating substrates. The wiring portion 12 is a circuit, a pad, and an electrode pad formed on one surface of the insulating substrate 11 by, for example, copper foil or the like. A solder resist is formed around the wiring portion 12. The hole portion 13 is a through hole having openings on both one surface side and the other surface side of the insulating substrate 11, and has an opening corresponding to the convex portion 23 of the rectifying semiconductor package 20.

[0036] The rectifying semiconductor package 20 is disposed on one surface of the substrate 10. As Figure 1 and Figure 2 shown, the rectifying semiconductor package 20 is a so-called insertion type semiconductor package, and includes a main body portion 21 and a lead portion 22. The rectifying semiconductor package 20 is used to, for example, perform full-wave rectification on commercial power supply alternating current to make it a pulsating current, and internally constitutes, for example, a bridge diode.

[0037] The main body portion 21 has a convex portion 23 that looks substantially L-shaped when viewed from the side. The convex portion 23 is formed such that the main body portion 21 protrudes toward the substrate side with the height position of the substrate opposing surface 24 that opposes the substrate as a reference (refer to Figure 1 and Figure 2 (a)). Here, as Figure 1 shown, when the substrate opposing surface 24 is in contact with the substrate 11, the substrate opposing surface can also be referred to as a substrate contact surface. In addition, on the side of the main body portion 21 opposite to the substrate side, a heat sink mounting surface 25 for mounting the heat sink 50 is formed. That is, in Figure 1 andFigure 2 (a), the main body 21 has a substrate facing surface 24 and a heat sink mounting surface 25 facing each other.

[0038] As Figure 1 shown, the main body 21 is disposed on one side of the substrate 10 in a state where the substrate contact surface 24 contacts the substrate 10 and the convex portion 23 that is part of the main body 21 is inserted into the hole portion 13. Therefore, no spacer is disposed between the main body 21 and the substrate 10. In addition, the front end of the convex portion 23 may penetrate to the opposite side of the substrate through the hole portion 13 or may stay in the hole portion 13.

[0039] The lead portion 22 is a plate-like member extending outward from the side surface (the middle position of the side surface) of the main body 21. In the first embodiment, four lead portions 22 extend at a predetermined interval (see Figure 2 (b)). As Figure 1 shown, the lead portion 22 extends horizontally at a height position along the surface of the substrate 10 without being bent. The lower surface of the lead portion 22 is joined to the wiring portion 12 by a conductive bonding material (such as solder). In addition, the substrate contact surface 24 and the lower surface of the lead portion are located at the same height position, but even when they are located at different height positions, the height positions can be made consistent by adjusting the depth of the hole portion and the like.

[0040] The lead portion 22 protrudes from the main body 21 at a position more than a predetermined height away from the height position of the heat sink mounting surface 25. This is because it is necessary to set the height position such that an insulation distance from the heat sink 50 can be ensured when the heat sink 50 is disposed.

[0041] As Figure 2 (c) shows, an inner lead 27, a semiconductor chip 28, and a connecting member 29 are provided in the main body 21 of the rectifying semiconductor package 20.

[0042] The inner lead 27 includes a pad on which the semiconductor chip 28 is mounted, and is bent into a crank shape from the pad and connected to the lead portion 22. The semiconductor chip 28 is disposed on the pad of the inner lead 27. Four diodes are disposed in the first embodiment to form a bridge diode. The connecting member 29 connects the electrode on the side opposite to the inner lead 27 side of the semiconductor chip 28 to the inner lead 27.

[0043] The inner lead 27 of the main body 21 is bent into a crank shape from the portion where the semiconductor chip 28 is mounted and extends to the outside of the sealing resin to become the lead portion 22 (outer lead). Therefore, it is necessary to cover the inner lead 27, particularly the portion bent into a crank shape, with a sealing resin sufficient to insulate from the outside, and thus the convex portion 23 protruding from the main body 21 is formed. Therefore, the lead portion 22 protrudes from the main body 21 at a middle position of the side surface of the main body 21 on the side where the convex portion 23 is formed.

[0044] As Figure 1 shown, the control semiconductor package 30 is a so-called surface-mounted semiconductor package having a main body portion 31 and lead portions 32. The control semiconductor package 30 controls the drive of an external electric motor or the like.

[0045] The main body portion 31 is resin-sealed into a substantially rectangular parallelepiped shape. The lead portions 32 extend outward from the side surface of the main body portion 31 and are bent into a crank shape or gull-wing shape midway. The front end portions of the lead portions 32 are disposed on the wiring portion 12 and are joined to the wiring portion 12 by a conductive bonding material (e.g., solder).

[0046] In the control semiconductor package 30, a heat sink mounting surface 35 for mounting the heat sink 50 is formed on the side opposite to the substrate side. The height position of the heat sink mounting surface 25 of the rectifying semiconductor package 20 and the height position of the heat sink mounting surface 35 of the control semiconductor package 30 are located at the same height position. More specifically, the height from the height position of the substrate contact surface 24 (the lower surface of the lead portion 22) of the rectifying semiconductor package 20 to the height position of the heat sink mounting surface 25 is equal to the height from the height position of the lowermost surface of the lead portion 32 of the control semiconductor package 30 to the height position of the heat sink mounting surface 35.

[0047] The other semiconductor package 40 is a so-called surface-mounted semiconductor package and is disposed on the substrate 10. In addition, electronic components such as capacitors are mounted on the substrate, but are basically surface-mounted components.

[0048] The heat sink 50 is disposed across the rectifying semiconductor package 20 and the control semiconductor package 30. The heat sink 50 is a heat sink shared by the rectifying semiconductor package 20 and the control semiconductor package 30.

[0049] 2. Effects of the semiconductor module 1 of Embodiment 1

[0050] According to the semiconductor module 1 of Embodiment 1, since the substrate 10 is provided, the substrate 10 has a hole portion 13 formed with an opening on at least one side surface, and in any one of at least one semiconductor package, a part of the main body portion 21 is inserted into the hole portion 13, the lead portion 22 extends horizontally along the height position of the surface of the substrate 10, and the lower surface of the lead portion 22 is joined to the wiring portion 12, it is possible to join the lower surface of the lead portion 22 to the wiring portion 12 without bending the lead portion 22 of the insertion-type semiconductor package 20.

[0051] In addition, for the semiconductor module 1 according to Embodiment 1, since a part of the main body portion 21 is inserted into the hole portion 13 in any one of at least one semiconductor package, it can be lower than the thickness of the semiconductor package 20, and it is a miniaturized and low-profile semiconductor module.

[0052] In addition, for the semiconductor module 1 according to Embodiment 1, since the main body portion 21 has a substrate opposing surface 24 that contacts or faces the substrate 10, and a convex portion 23 that protrudes toward the substrate 10 side with reference to the height position of the substrate opposing surface 24, and a part of the main body portion 21 is the convex portion 23, the convex portion 23 can be inserted into the hole portion 13, so that the lead portion 22 extends horizontally at a height position along the surface of the substrate 10, and the lower surface of the lead portion 22 is joined to the wiring portion 12. Therefore, the lower surface of the lead portion 22 and the wiring portion 12 can be joined without bending the lead portion 22 of the insert type semiconductor package. And, although it is an insert type semiconductor package, like a surface mount type semiconductor package, it can also be joined to the substrate 10 by reflow soldering, without the need for a surface mount type semiconductor package and an insert type semiconductor package separately, and the operation process becomes simple.

[0053] In addition, for the semiconductor module 1 according to the first embodiment, even when a common heat sink 50 is used in two or more semiconductor packages, by adjusting the depth of the hole portion, it is possible to make the mounting height of the semiconductor package 20 consistent with the substrate 10 without inserting a spacer between the rectifying semiconductor package 20 and the substrate 10 or processing the heat sink. Therefore, a miniaturized and thinner semiconductor module can be manufactured.

[0054] However, the lead portion of the insert type semiconductor package extends from the side surface of the main body portion. If it is mounted on the substrate in an upright state, the mounting height will be high (refer to Figure 8 semiconductor package 920 and the existing first semiconductor module 900). In addition, in this case, a common heat sink cannot be placed on two semiconductor packages. Therefore, the mounting height is reduced by bending the lead portion into an L shape and arranging it horizontally (refer to Figure 9 semiconductor package 930 and the existing second semiconductor module 901).

[0055] However, the rectifying semiconductor package 920 and the control semiconductor package 930 are very different in function and constituent components, so their thicknesses are different, and their mounting heights are also different. Therefore, in order to mount the common heat sink 950, it can be considered to adjust the mounting height by inserting spacers 960 and 970 between the semiconductor packages 920 and 930 and the substrate 910 to mount the common heat sink 950 (see Figure 9and the existing second semiconductor module 901), or by protruding a part of the heat sink to compensate for the height difference after processing the heat sink and installing it (refer to Figure 10 the heat sink 950a and the existing third semiconductor module 902).

[0056] This means that even if one of the two semiconductor packages (in Figure 11 the control semiconductor package 930) is a surface-mounted semiconductor package, and the other (in Figure 11 the rectifying semiconductor package 920) is an insertion-type semiconductor package, adjustments such as inserting spacers and processing heat sinks are required, and it is impossible to simply mount a common heat sink (refer to Figure 11 and the existing fourth semiconductor module 903).

[0057] That being said, if the lead portion of the insertion-type semiconductor package is bent to become a surface-mounted type, the lead portion originally formed as an insertion-type semiconductor package becomes thicker, which is not only difficult to bend, but also the mounting area becomes larger, making it difficult to form a miniaturized semiconductor module.

[0058] In contrast, in the semiconductor module of Embodiment 1, by making the heat sink mounting surfaces of the two semiconductor packages have the same height, there is no need to insert spacers or process the heat sink, and it also has the effect of being able to simply place a common heat sink on the two semiconductors. Specifically, in Figure 1 and Figure 3 since the heat sink mounting surfaces 25 of the control semiconductor packages 20, 20a and the heat sink mounting surfaces 35 of the rectifying semiconductor packages 30, 30a are at the same height with respect to the height position of the upper surface of the insulating substrate 11, a common heat sink 50 can be simply mounted.

[0059] In addition, according to the semiconductor module of the first embodiment, since one semiconductor package among the plurality of semiconductor packages is a control semiconductor package 20 and the other semiconductor packages among the plurality of semiconductor packages are rectifying semiconductor packages 30, the semiconductor packages in the main part of the semiconductor module can be miniaturized, thereby realizing the miniaturization and thinning of the entire semiconductor module.

[0060]

Embodiment 2

[0061] The semiconductor module 2 of Embodiment 2 basically has the same structure as the semiconductor module 1 of Embodiment 1, but is different from the semiconductor module 1 of Embodiment 1 in that the rectifying semiconductor package is a surface-mounted type and the control semiconductor package is an insertion-type.

[0062] In Embodiment 2, as in Figure 3As shown, the semiconductor package 20a for rectification has a main body portion 21a and lead portions 22a. The main body portion 21a is resin-sealed into a substantially rectangular parallelepiped shape. The lead portions 22a extend outward from the side surface of the main body portion 21a and are bent into a crank shape or gull-wing shape midway. The front end portions of the lead portions 22a are arranged on the wiring portion 12 and joined with a conductive joining material (such as solder).

[0063] As Figure 3 and Figure 4 shown, the semiconductor package 30a for control has a main body portion 31a and lead portions 32a.

[0064] The main body portion 31a is resin-sealed and has a U-shaped cross-section with an opening at the bottom when viewed from the side. A substrate contact surface 34 that faces and contacts the substrate 10 is formed near the center below the main body portion 31a, and two convex portions 33a, 33a that protrude toward the substrate 10 side with reference to the height position of the substrate contact surface 34 are provided at both ends thereof. The convex portions 33a are inserted into the hole portions 13 of the substrate 10. On the side opposite to the substrate side, a heat sink mounting surface 35 for mounting the heat sink 50 is formed.

[0065] The main body portion 31a is substantially rectangular when viewed from above, and convex portions 33a are formed along opposite sides. For example, four lead portions 32a extend from the side portions of the sides where the convex portions 33a are formed. For example, two through holes 36 for fixing the heat sink 50 are formed along the line passing through the center of the main body portion 31a.

[0066] The lead portions 32a are plate-like members that extend outward from the side surface of the main body portion 31a on the side where the convex portions 33a are formed. In Embodiment 1, four are provided respectively from opposite sides. As Figure 3 shown, when the convex portions 33a are inserted into the hole portions 13, the lead portions 32a are at the height position of the surface of the substrate 10 and extend horizontally along the height position of the surface of the substrate 10. The lower surface of the lead portions 32a is joined to the wiring portion 12 with a conductive joining material (such as solder).

[0067] In this way, although the semiconductor module 2 of Embodiment 2 is different from the semiconductor module 1 of Embodiment 1 in that the semiconductor package for rectification is a surface-mount type and the semiconductor package for control is an insertion type, similar to the case of the semiconductor module 1 of Embodiment 1, since the substrate 10 is provided, the substrate 10 has hole portions 13 with openings formed on at least one side surface, and in at least one semiconductor package, a part of the main body portion 31a is inserted into the hole portions 13, the lead portions 32a extend horizontally at the height position of the surface of the substrate 10, and the lower surface of the lead portions 32a is joined to the wiring portion 12, it is possible to join the lower surface of the lead portions 32a and the wiring portion 12 without bending the lead portions 32a of the insertion-type semiconductor package 30a.

[0068] In addition, in the semiconductor module 2 according to Embodiment 2, since a part of the main body portion 31a is inserted into the hole portion 13 in any one of at least one semiconductor package, it can be lower than the thickness of the semiconductor package 30a, and a miniaturized and low-profile semiconductor module can be obtained.

[0069] In addition, the semiconductor module 2 of Embodiment 2 has the same structure as the semiconductor module 1 of Embodiment 1 except that the rectifying semiconductor package is a surface-mount type and the control semiconductor package is an insertion type, and thus has an effect corresponding to the effect of the semiconductor module 1 of Embodiment 1.

[0070]

Embodiment 3

[0071] The semiconductor module 3 of Embodiment 3 basically has the same structure as the semiconductor module 1 of Embodiment 1, but is different from the semiconductor module 1 of Embodiment 1 in that both the rectifying semiconductor package and the control semiconductor package are insertion-type semiconductor packages. That is, in Embodiment 3, as Figure 5 shown, the rectifying semiconductor package is the insertion-type rectifying semiconductor package 20 used in the first embodiment, and the control semiconductor package is the insertion-type control semiconductor package 30a used in Embodiment 2.

[0072] In this way, although the semiconductor module 3 of Embodiment 3 is different from the semiconductor module 1 of Embodiment 1 in that both the rectifying semiconductor package and the control semiconductor package are insertion-type semiconductor packages, similar to the semiconductor module 1 of Embodiment 1, since the substrate 10 is provided, the substrate 10 has a hole portion 13 formed with an opening on at least one side surface, and in at least one semiconductor package, a part of the main body portions 21, 31a is inserted into the hole portion 13, and the lead portions 22, 32a extend horizontally at a height position along the surface of the substrate 10, and the lower surface of 32a is joined to the wiring portion 12, so that the lower surfaces of the lead portions 22, 32a can be joined to the wiring portion 12 without bending the lead portions 22, 32a of the insertion-type semiconductor packages 20, 32a.

[0073] In addition, in the semiconductor module 3 according to Embodiment 3, since a part of the main body portions 21, 31a is inserted into the hole portion 13 in any one of at least one semiconductor package, it can be lower than the thickness of the semiconductor packages 20, 30a, and miniaturization and low-profile can be achieved.

[0074] In addition, since the semiconductor module 3 of Embodiment 3 has the same structure as the semiconductor module 1 of Embodiment 1 except that both the rectifying semiconductor package and the control semiconductor package are insert-type semiconductor packages, it has corresponding effects among the effects of the semiconductor module 1 of Embodiment 1.

[0075]

Embodiment 4

[0076] The semiconductor module 4 of Embodiment 4, as shown in Figure 6 and Figure 7 , basically has the same structure as the semiconductor module 1 of Embodiment 1, but a part of the structure of the main body portion 31b of the control semiconductor package is different in appearance from that of the semiconductor module 1 of Embodiment 1. That is, in Embodiment 4, in the control semiconductor package 30b, the shape of a part of the main body portion 31b is not limited to a convex portion. In Figure 6 , the main body portion 31b is formed into a rectangular parallelepiped shape sealed with resin, and a part of it is inserted into the hole portion 13.

[0077] The part of the main body portion 31b of the control semiconductor package 30b that is lower than the lower surface of the lead portion 32b is inserted into the hole portion 13 of the substrate 10. In other words, the lower surface of the lead portion 32b of the control semiconductor package 30b is located at the same height position as the opposite surface (substrate contact surface) of the substrate of the rectifying semiconductor package 20, and the entire lower side below this height position is inserted into the hole portion 13. Therefore, in Figure 6 , it can also be said that the part of the lower die below the height position of the lower surface of the lead portion 32b corresponds to a part of the main body portion 31b.

[0078] In this way, although a part of the structure of the main body of the control semiconductor package of the semiconductor module 4 of Embodiment 4 is the same as that of the semiconductor module 1 of Embodiment 1, it is different in that its shape is not a convex portion, and it has a substrate 10 having a hole portion 13 formed with an opening on at least one side. A part of the main body portion 31b is inserted into the hole portion 13, the lead portion 32b extends horizontally at the height position along the surface of the substrate 10, and the lower surface of the lead portion 32b is joined to the wiring portion 12, and it has a substrate 10 having a hole portion 13 formed with an opening on at least one side. A part of any one of at least one semiconductor package 31b is inserted into the hole portion 13, the lead portions 22, 31b extend horizontally at the height position along the surface of the substrate 10, and the lower surfaces of the lead portions 22, 31b are joined to the wiring portion 12. Therefore, the lower surfaces of the lead portions 22, 32b and the wiring portion 12 can be joined without bending the lead portions 22, 32b of the insert-type semiconductor packages 20, 30b.

[0079] In addition, in the semiconductor module 4 according to Embodiment 4, since a part of the main body portions 21 and 31b is inserted into the hole portions 13 in any one of at least one semiconductor package, it can be lower than the thickness of the semiconductor packages 20 and 30b, and miniaturization and low height can be achieved.

[0080] In addition, in the semiconductor module 4 according to Embodiment 4, since the portion of the main body portion 31b that is lower than the height position of the lower surface of the lead portion 32b corresponds to a part of the main body portion 31b, compared with the case where the lead portion 32b is inserted into the hole of the substrate 11, the structure in which the lower surface of the lead portion 32b is connected to the wiring portion 12 can increase the connection area. Therefore, the connection resistance can be reduced, and the connection strength can also be improved. For example, connection failures can be suppressed even for vibrations.

[0081] In addition, in the semiconductor module 4 according to Embodiment 4, since a part of the main body portion (the portion lower than the lower surface of the lead portion) is inserted into the hole portion 13 in any one of at least one semiconductor package, it can be lower than the thickness of the semiconductor package, and miniaturization and low height can be achieved.

[0082] In addition, the semiconductor module 4 of Embodiment 4 has the same structure as the semiconductor module 1 of Embodiment 1 except for a part of the structure of the main body portion of the control semiconductor package. Therefore, it has the same effects as those of the semiconductor module 1 of Embodiment 1.

[0083]

Embodiment 5

[0084] Next, Figure 13 a method for manufacturing the semiconductor module of Embodiment 5 will be described. First, a first semiconductor package 20 and a second semiconductor package 30 are prepared. The first semiconductor package 20 has a substrate 11 and a plate-shaped first lead portion 22. The substrate 11 includes holes 13 having openings on at least one surface side and a wiring portion 12. The first lead portion 22 extends outward from the side surface of the first main body portion 21. The second semiconductor package 30 has a plate-shaped second lead portion 32 that extends outward from the side surface of the second main body portion 31 and has a bent portion 37 that is bent so as to approach the substrate 11. The first main body portion 21 and the second main body portion 31 may also be sealed with resin. In addition, Figure 13 in

[0085] Next, the convex portion 23, which is a part of the first main body portion 21, is inserted into the hole portion 13, and at the same time, the lower surface of the first lead portion 22 is joined to the wiring portion 12 on the substrate 11. Similarly, the first semiconductor package 20 is connected to the substrate 10 and the second semiconductor package 30 is connected to the substrate 10 by joining the lower surface of the portion (front end portion) where the second lead portion 32 extends in a direction parallel to the surface of the substrate 11 to the wiring portion 12 on the substrate 11.

[0086] In the fifth embodiment, it is characterized in that while joining the lower surface of the first lead portion 22 to the wiring portion 12 on the substrate 11, the lower surface of the second lead portion 32 is joined to the wiring portion 12 on the substrate 11. As a specific manufacturing method, for example, the lower surface of the first lead portion 22 and the lower surface of the second lead portion 32 can also be joined to the substrate 11 by a single reflow process.

[0087] By this manufacturing method, the first semiconductor package 20 is of the insertion type and can be joined to the substrate by a process such as reflow like the surface-mounted second semiconductor package 30, so that the operation process can be simplified.

[0088] Although the first semiconductor package 20 and the second semiconductor package 30 are joined to the substrate in the fifth embodiment, the above effects can also be obtained when only the insertion-type first semiconductor package 20 is joined to the substrate. That is, it can include: a preparation process of preparing a substrate having a hole portion with an opening on at least one side; and a connection process of connecting at least one first semiconductor package 20 having a main body portion sealed with resin and a plate-shaped lead portion extending outward from the side of the main body portion to the substrate. In the connection process, in any one of the at least one first semiconductor package, a part of the main body portion is inserted into the hole portion and arranged such that the lead portion extends horizontally along the surface of the substrate, and the lower surface of the lead portion is joined to the substrate, thereby connecting the first semiconductor package to the substrate. In this case, the first semiconductor package 20 is of the insertion type and has the effect that the first semiconductor package 20 can be joined to the substrate by a process such as reflow like a surface-mounted semiconductor package.

[0089] In addition, as in the first embodiment, when one of the two semiconductor packages is a control semiconductor package and the other is a rectifying semiconductor package, the semiconductor packages of the core part of the semiconductor module can be miniaturized and thinned, and the entire semiconductor module can be miniaturized and thinned.

[0090] The present invention has been described based on the above embodiments, but the present invention is not limited to the above embodiments. It can be implemented in various ways without departing from the concept. For example, the following modifications can also be made.

[0091] (1) The positions, connections, numbers, etc. described in the above-described embodiments (including each modification example) are illustrative and can be changed within the range that does not impair the effects of the present invention. The same applies hereinafter.

[0092] (2) In the above-described Embodiment 4, as a part of the main body portion of the control semiconductor package, the non-convex portion is inserted into the hole portion, but the present invention is not limited thereto. A component that is not a convex portion can be inserted into the hole portion as a part of the main body portion of the rectifying semiconductor package, or a component that is not a convex portion can be inserted into the hole portion as a part of the main body portions of both the control semiconductor package and the rectifying semiconductor package.

[0093] (3) In the above-described embodiments, a substrate in which the wiring portion is formed only on one surface is used, but the present invention is not limited thereto. A substrate in which the wiring portion is formed on one surface and another surface can also be used.

[0094] (4) In the above-described embodiments, the hole portion 13 is a through hole, but the present invention is not limited thereto. The hole portion 13 can also be a non-through hole (a hole having an opening on one side).

[0095] (5) In the above-described embodiments, the substrate opposing surface is the substrate contact surface that contacts the substrate, but the present invention is not limited thereto. The substrate opposing surface may not contact the substrate.

[0096] (6) In the above-described embodiments, as the semiconductor package, three semiconductor packages including a control semiconductor package, a rectifying semiconductor package, and other semiconductor packages are provided, but the present invention is not limited thereto. Other semiconductor packages may not be provided, or only one of the control semiconductor package or the rectifying semiconductor package may be provided. In other words, one semiconductor package may be provided, or multiple semiconductor packages may be provided. In addition, one of the multiple semiconductor packages is a control semiconductor package, and the other semiconductor packages among the multiple semiconductor packages are preferably rectifying semiconductor packages.

[0097] Reference Signs

[0098] 1, 2, 3, 4... semiconductor modules; 10... substrate; 11... insulating substrate; 12... wiring portion; 13... hole portion; 20, 20a... semiconductor packages for rectification; 21, 21a... main body portions; 22, 22a... lead portions; 23... convex portion; 24... substrate contact surface; 25... heat sink mounting surface; 26... through hole; 27... inner lead; 28... semiconductor chip; 29... connecting member; 30, 30a, 30b... semiconductor packages for control; 31, 31a, 31b... main body portions; 32, 32a, 32b... lead portions; 33a... convex portion; 34... substrate contact surface; 35... heat sink mounting surface; 36... through hole; 37... bending portion; 40... other semiconductor packages; 50... heat sink.

Claims

1. A semiconductor module, characterized in that: include: A substrate having a wiring portion formed on at least one surface, and a hole portion having an opening at least on the one surface side; as well as at least one semiconductor package, which is arranged on the one side of the substrate and has a main body portion sealed with resin and a plate-shaped lead portion extending outward from a side surface of the main body portion, Wherein, in any one of at least one of the semiconductor packages, A portion of the main body is inserted into the hole. The lead portion extends along the surface of the substrate, The lower surface of the lead portion is bonded to the wiring portion.

2. The semiconductor module according to claim 1, characterized in that: in, The semiconductor package includes a substrate facing surface that contacts or faces the substrate, and a convex portion that protrudes toward the substrate with a height position of the substrate facing surface as a reference. A portion of the main body portion is the convex portion.

3. The semiconductor module according to claim 1 or 2, characterized in that: in, As the semiconductor package, there are a plurality of the semiconductor packages. In at least two of the plurality of semiconductor packages, heat sink mounting surfaces for mounting heat sinks are respectively formed on a side of the main body opposite to the substrate side, and the heat sink mounting surfaces are at the same height.

4. The semiconductor module according to claim 1 or 2, characterized in that: in, As the semiconductor package, there are a plurality of the semiconductor packages. One of the plurality of semiconductor packages is a semiconductor package for control, and the other semiconductor packages of the plurality of semiconductor packages are semiconductor packages for rectification.

5. A method for manufacturing a semiconductor module, characterized in that: Include: A preparation step of preparing a substrate having a hole portion having an opening on at least one side; as well as a connecting step of connecting at least one semiconductor package having a main body portion sealed with resin and a plate-shaped lead portion extending outward from a side surface of the main body portion to the substrate, Wherein, in the connecting step, In any one of at least one of the semiconductor packages, The semiconductor package is connected to the substrate by inserting a portion of the main body into the hole and arranging the lead portion so as to extend horizontally along the surface of the substrate, and bonding the lower surface of the lead portion to the substrate.

6. A method for manufacturing a semiconductor module, characterized in that: Include: A preparation step of preparing a substrate having a hole portion having an opening on at least one side; A first step is to connect at least one first semiconductor package having a first main body portion sealed with resin and a plate-shaped first lead portion extending outward from a side surface of the first main body portion to the substrate; as well as The second step is to connect at least one second semiconductor package body to the substrate, wherein the second semiconductor package body has a second main body portion sealed with resin and a plate-shaped second lead portion extending outward from a side surface of the second main body portion and including a portion bent in a manner close to the substrate. Wherein, in the first step, In any one of at least one of the first semiconductor packages, A portion of the first main body is inserted into the hole and the first lead is arranged so as to extend along the surface of the substrate, and the lower surface of the first lead is bonded to the substrate, thereby connecting the first semiconductor package to the substrate. In the second step, The second semiconductor package is connected to the substrate by bonding the lower surface of the second lead portion to the substrate. Bonding the lower surface of the first lead portion to the substrate in the first step and bonding the lower surface of the second lead portion to the substrate in the second step are performed simultaneously.

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