Perovskite solar cell, preparation method, electric equipment and power generation equipment
By introducing passivation materials containing halogen anions and specific cations into the light absorption layer of perovskite solar cells, the problem of perovskite layer defects is solved and the photoelectric conversion efficiency and stability are improved.
Patent Information
- Application Number
- CN202311735581.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-15
- Publication Date
- 2025-06-17
AI Technical Summary
The perovskite layer surface and/or grain boundaries of perovskite solar cells are prone to defects, which affects the photoelectric conversion efficiency of the battery and the stability of the device.
By introducing a passivation material into the light absorbing layer, the anions of the passivation material include halide anions, the cations include N-containing cations and oxygen-containing groups, for passivating anionic and cationic defects of the perovskite material.
Passivation of defects in perovskite materials has been achieved, and the photoelectric conversion efficiency and stability of perovskite solar cells have been improved.
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Figure CN120166838A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of photovoltaic devices, and particularly to a perovskite solar cell, a preparation method, an electrical equipment and a power generation equipment. Background Art
[0002] The information provided in this part is only background information related to the present application, and it is not necessarily prior art.
[0003] Perovskite solar cells have broad application prospects due to their advantages such as high conversion efficiency and easy preparation. However, defects are likely to occur on the surface and / or grain boundaries of the perovskite layer, which affect the photoelectric conversion efficiency and device stability of the battery, and are important factors affecting the application of perovskite solar cells. Summary of the Invention
[0004] In view of the technical problems existing in the background art, the present application provides a perovskite solar cell, a preparation method, an electrical equipment and a power generation equipment, aiming to improve the photoelectric conversion efficiency of the perovskite solar cell.
[0005] In a first aspect, an embodiment of the present application provides a perovskite solar cell, which at least includes:
[0006] A light absorption layer, the light absorption layer includes a perovskite material and a passivation material dispersed in the perovskite material; or
[0007] At least includes: a light absorption layer and a passivation layer disposed on one side of the light absorption layer, the light absorption layer includes a perovskite material, and the passivation layer includes a passivation material;
[0008] Wherein, the anion of the passivation material includes a halogen anion; the cation of the passivation material includes a first end group and a second end group; the first end group includes a cation containing N; the second end group includes at least one of a cation containing N and an oxygen-containing group.
[0009] An embodiment of the present application passivates the anion defects of the perovskite material through the anion of the provided passivation material, and passivates the cation defects of the perovskite material through the cation of the provided passivation material, realizing the passivation of defects in the perovskite material, thereby realizing the improvement of the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0010] In some embodiments, the halogen anion includes F - , Cl - , Br - , I - and at least one of them.
[0011] Embodiments of the present application can design and / or adjust the specific scheme of the halogen anion of the passivation material according to the anion of the perovskite material in the light absorption layer, so as to further improve the passivation effect and enhance the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0012] In some embodiments, the halogen anion is Br - 。
[0013] Embodiments of the present application use a passivation material with a bromine anion as the halogen anion, which is beneficial to reducing the anion migration in the light absorption layer, thereby further improving the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0014] In some embodiments, the N-containing cation is selected from at least one of –N(R1R2R3) + 、=N(R1R2) + 、–NR4-C(R5R6) + wherein, R1, R2, R3, and R4 are independently selected from any one of H, a substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, a substituted or unsubstituted aromatic group with 6 to 15 ring atoms, and a substituted or unsubstituted heteroaromatic group with 1 to 15 ring atoms; R5 and R6 are independently selected from any one of H, NH2, and a substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, wherein at least one of R5 and R6 is NH2, or R5 and R6 are =NH2.
[0015] Embodiments of the present application can design and / or adjust the specific scheme of the cation of the passivation material according to the cation of the perovskite material in the light absorption layer, so as to improve the cation passivation effect and enhance the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0016] In some embodiments, the N-containing cation includes at least one of methylamine cation, formamidine cation, ethylamine cation, and guanidine cation.
[0017] Embodiments of the present application can design and / or adjust the specific scheme of the cation of the passivation material according to the cation of the perovskite material in the light absorption layer, so as to further improve the cation passivation effect and enhance the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0018] In some embodiments, the oxygen-containing group includes any one of phosphonic acid group, sulfonic acid group, carboxylic acid group, sulfinic acid group, boric acid group, or silicic acid group.
[0019] Embodiments of the present application can passivate the metal cations of the perovskite material in the light absorption layer 10 (such as the B-site cations in the perovskite material of the ABX3 configuration or the C-site and / or D-site cations in the perovskite material of the A2CDX6 configuration) through the setting of oxygen-containing groups. Thus, while the passivating material passivates the anion defects of the perovskite material, it can also passivate the metal cation defects of the perovskite material, which can further improve the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0020] In some embodiments, the cation of the passivating material further includes a middle group connecting the first end group and the second end group; the middle group includes at least one of a substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, a substituted or unsubstituted aromatic group with 6 to 15 ring atoms, and a substituted or unsubstituted heteroaromatic group with 1 to 15 ring atoms.
[0021] Embodiments of the present application can regulate the size of the passivating material molecules by regulating the carbon chain length and / or the number of cyclic groups of the middle group, so that the passivating material molecules match their set positions, which is beneficial to achieving a good passivation effect; and can regulate the hydrophobic property of the passivating material by regulating the carbon chain length and / or the number of cyclic groups of the middle group. When the passivating material plays a role in passivating defects, it can also play a role in regulating the water and oxygen stability of the device, further improving the stability of the perovskite solar cell.
[0022] In some embodiments, the general formula of the cation of the passivating material includes A1-A2-A3, where A1 includes -NH2 + (CH3), -NH-C=NH2 + , -NH-C(NH2)NH2 + , -NH3 + , =NH2 + and at least one of them; A3 includes -NH2 + (CH3), -NH-C(NH2)NH2 + , -NH3 + , =NH2 + , -COOH, -B(OH)2, -PO(OH)2, -SO3H and at least one of them; A2 includes at least one of an aliphatic hydrocarbon group with 2 to 4 carbon atoms, a phenyl group, and a cycloalkyl group.
[0023] Embodiments of the present application can achieve a good passivation effect by providing some optional schemes of the passivating material cations, thereby being able to improve the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0024] In some embodiments, the cation of the passivating material includes at least one of the following structural formulas:
[0025]
[0026]
[0027] Embodiments of the present application can achieve a good passivation effect by providing specific solutions for some cations of the passivation material, thereby achieving an improvement in the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0028] In some embodiments, the perovskite solar cell further includes a substrate structure. The light absorption layer is located on one side of the substrate structure. The passivation material is dispersed in the perovskite material, and the concentration of the anions of the passivation material gradually decreases along the direction from the light absorption layer towards the substrate structure; and / or, a passivation layer is provided on the side of the light absorption layer away from the substrate structure. The passivation layer includes the passivation material, and some anions of the passivation material are distributed in the light absorption layer, and the concentration of the anions of the passivation material distributed in the light absorption layer gradually decreases along the direction from the light absorption layer towards the substrate structure.
[0029] Embodiments of the present application achieve a good passivation effect by regulating the concentration distribution of the anions of the passivation material in the light absorption layer, so that the anion concentration of the passivation material matches the halogen vacancy defect concentration of the light absorption layer. In addition, by regulating the concentration distribution of the anions of the passivation material in the light absorption layer, the energy band of the light absorption layer is bent, and the energy levels of the light absorption layer and its adjacent carrier transport layer are more matched, promoting the carrier transport efficiency, thereby further promoting the improvement of the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0030] In some embodiments, the perovskite solar cell includes a substrate structure, a first electrode layer, a hole transport layer, a light absorption layer, an electron transport layer, and a second electrode layer that are sequentially stacked; the light absorption layer includes a perovskite material and a passivation material dispersed in the perovskite material; or,
[0031] The perovskite solar cell includes a substrate structure, a first electrode layer, a hole transport layer, a light absorption layer, a passivation layer, an electron transport layer, and a second electrode layer that are sequentially stacked; the light absorption layer includes a perovskite material, and the passivation layer includes a passivation material.
[0032] Embodiments of the present application passivate various defects of the perovskite material by introducing the passivation material into the provided perovskite solar cell, thereby achieving an improvement in the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0033] In a second aspect, embodiments of the present application provide a preparation method for any perovskite solar cell provided in the first aspect, at least including:
[0034] Provide a substrate structure;
[0035] An optical absorption layer is disposed on a substrate structure, and the optical absorption layer includes a perovskite material and a passivation material dispersed in the perovskite material;
[0036] Or, it at least includes:
[0037] Provide a substrate structure;
[0038] An optical absorption layer is disposed on the substrate structure, and the optical absorption layer includes a perovskite material;
[0039] A passivation layer is disposed on the optical absorption layer, and the passivation layer includes a passivation material.
[0040] Through the provided preparation method of the perovskite solar cell in the embodiments of the present application, the passivation material is introduced into the system of the perovskite solar cell. The anion defects of the perovskite material are passivated by the anions of the passivation material, and the cation defects of the perovskite material are passivated by the cations of the passivation material, realizing the passivation of various defects of the perovskite material, thereby realizing the improvement of the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0041] In some embodiments, after the step of disposing the optical absorption layer on the substrate structure, where the optical absorption layer includes a perovskite material and a passivation material dispersed in the perovskite material, or after the step of disposing the passivation layer on the optical absorption layer, where the passivation layer includes a passivation material, it further includes:
[0042] Performing at least one of negative pressure treatment, temperature rise treatment, and light irradiation treatment on the optical absorption layer or on the optical absorption layer and the passivation layer.
[0043] Through the above method in the embodiments of the present application, the concentration of the anions of the passivation material in the optical absorption layer in which the passivation material is dispersed gradually decreases along the direction of the optical absorption layer towards the substrate structure, and the method is simple and easy to implement.
[0044] In some embodiments, the pressure range of the negative pressure treatment includes 50 Pa to 150 Pa; and / or, the temperature range of the temperature rise treatment includes 50 °C to 100 °C; and / or, the irradiance range of the light irradiation treatment includes 100 W / m 2 ~1000 W / m 2 .
[0045] Through the specific numerical range of the above treatment method provided in the embodiments of the present application, the scheme that the concentration of the anions of the passivation material in the optical absorption layer in which the passivation material is dispersed gradually decreases along the direction of the optical absorption layer towards the substrate structure is realized.
[0046] In some embodiments, the irradiance range of the light irradiation treatment includes 100 W / m 2 ~500 W / m 2 .
[0047] In the embodiments of the present application, within the range of irradiance of the above-mentioned range, it is possible to not only achieve a gradual decrease in the concentration of anions of the passivation material in the light absorption layer along the direction of the light absorption layer towards the substrate structure, but also reduce the influence on the perovskite material of the light absorption layer, and improve the photoelectric conversion efficiency of the perovskite solar cell.
[0048] In some embodiments, the time range of the negative pressure treatment includes 20 s to 30 s; and / or, the time range of the heating treatment includes 5 min to 15 min; and / or, the time range of the light irradiation treatment includes 5 min to 15 min.
[0049] The embodiments of the present application realize the scheme of gradually decreasing the concentration of anions of the passivation material in the light absorption layer along the direction of the light absorption layer towards the substrate structure by providing the specific time range of the above-mentioned treatment method.
[0050] In some embodiments, the time of the heating treatment is 10 min; and / or, the time of the light irradiation treatment is 10 min.
[0051] The embodiments of the present application realize the scheme of gradually decreasing the concentration of anions of the passivation material in the light absorption layer along the direction of the light absorption layer towards the substrate structure by providing the specific time of the heating treatment and / or the light irradiation treatment.
[0052] In a third aspect, the embodiments of the present application provide an electrical device, including a perovskite solar cell prepared by any perovskite solar cell provided in the first aspect or the preparation method of any perovskite solar cell provided in the second aspect.
[0053] In the embodiments of the present application, the perovskite solar cell serves as the electrical energy source of the electrical device to realize the normal operation of the electrical device. The electrical device adopts the perovskite solar cell provided in the present application and at least has the same advantages as the perovskite solar cell, which can improve the battery performance of the electrical device.
[0054] In a fourth aspect, the embodiments of the present application provide a power generation device, including a perovskite solar cell prepared by any perovskite solar cell provided in the first aspect or the preparation method of any perovskite solar cell provided in the second aspect.
[0055] In the embodiments of the present application, the perovskite solar cell serves as the energy source of the power generation device to realize the electrical energy output of the power generation device. The power generation device adopts the perovskite solar cell provided in the present application and at least has the same advantages as the perovskite solar cell, which can improve the power generation performance of the power generation device. Description of the Drawings
[0056] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.
[0057] Figure 1 It is the first structural schematic diagram of the perovskite solar cell provided by the embodiment of the present application;
[0058] Figure 2 It is the second structural schematic diagram of the perovskite solar cell provided by the embodiment of the present application;
[0059] Figure 3 It is the third structural schematic diagram of the perovskite solar cell provided by the embodiment of the present application;
[0060] Figure 4 It is the fourth structural schematic diagram of the perovskite solar cell provided by the embodiment of the present application;
[0061] Figure 5 It is the fifth structural schematic diagram of the perovskite solar cell provided by the embodiment of the present application;
[0062] Figure 6 It is the sixth structural schematic diagram of the perovskite solar cell provided by the embodiment of the present application;
[0063] Figure 7 It is the structural schematic diagram of the electrical equipment provided by the embodiment of the present application;
[0064] Figure 8 It is the structural schematic diagram of the power generation equipment provided by the embodiment of the present application.
[0065] Explanation of the reference numerals in the drawings:
[0066] 100 - perovskite solar cell, 10 - light absorption layer, 20 - passivation layer, 30 - substrate structure, 40 - first electrode layer, 50 - hole transport layer, 60 - electron transport layer, 70 - second electrode layer, 1000 - electrical equipment, 2000 - power generation equipment. Detailed implementation manners
[0067] The following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, rather than all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope protected by the present application.
[0068] The terms "first", "second", and "third" in this application are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", and "third" may explicitly or implicitly include at least one of such features. In the description of this application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined. In the embodiments of this application, all directional indications (such as up, down, left, right, front, back...) are only used to explain the relative positional relationship and movement conditions between components in a specific posture (as shown in the drawings). If the specific posture changes, the directional indications will also change accordingly. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but optionally further includes steps or units not listed, or optionally further includes other steps or units inherent to these processes, methods, products, or devices.
[0069] Reference to "embodiment" in this context means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of this application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0070] Halide perovskite solar cells have broad application prospects due to their advantages such as high carrier mobility, adjustable bandgap, high light absorption coefficient, and low recombination rate. However, there are many halogen vacancy defects on the surface and grain boundaries of the perovskite layer in such perovskite solar cells. These halogen vacancy defects will lead to a decrease in the photoelectric conversion efficiency of perovskite solar cells, and at the same time, increase the recombination rate of electrons and ions, thereby reducing the stability of perovskite solar cells. Therefore, how to passivate halogen vacancy defects is an important issue in the research of halide perovskite solar cells.
[0071] The technical solutions described in the embodiments of this application are applicable to perovskite solar cells, preparation methods, electrical equipment, and power generation equipment. The perovskite solar cells disclosed in this application can be used in perovskite tandem solar cells and can also be used in silicon-perovskite tandem solar cells, and this application does not make any restrictions.
[0072] The following will describe this application in detail with reference to the drawings and embodiments.
[0073] Please refer to Figures 1-2 , Figure 1It is the first structural schematic diagram of the perovskite solar cell provided by the embodiment of the present application. Figure 2 It is the second structural schematic diagram of the perovskite solar cell provided by the embodiment of the present application.
[0074] In the first aspect, referring to Figure 1 , the embodiment of the present application provides a perovskite solar cell 100, which at least includes a light absorption layer 10, and the light absorption layer 10 includes a perovskite material and a passivation material dispersed in the perovskite material. Or referring to Figure 2 , the embodiment of the present application provides a perovskite solar cell 100, which at least includes a light absorption layer 10 and a passivation layer 20 disposed on one side of the light absorption layer 10. The light absorption layer 10 includes a perovskite material, and the passivation layer 20 includes a passivation material. Among them, the anion of the passivation material includes a halogen anion; the cation of the passivation material includes a first end group and a second end group; the first end group includes a nitrogen-containing cation; the second end group includes at least one of a nitrogen-containing cation and an oxygen-containing group.
[0075] Among them, the perovskite solar cell 100 refers to a device that converts light energy into electrical energy through the photovoltaic effect and belongs to the third-generation solar cell.
[0076] The perovskite solar cell 100 at least includes a light absorption layer 10. The light absorption layer 10 is the core component of the perovskite solar cell 100, which is used to absorb the photon energy of sunlight, generate electron-hole pairs, and separate the electron-hole pairs into free electrons and holes under the action of the built-in electric field. The holes and electrons are respectively collected by two different electrodes, and the two electrodes are connected into a circuit to generate a photocurrent.
[0077] In the perovskite solar cell 100, the material forming the light absorption layer 10 includes a perovskite material, and the molecular formula of the perovskite material includes ABX3 or A2CDX6. Among them, A is an inorganic, organic or organic-inorganic hybrid cation; in some embodiments, A includes methylammonium cation MA + , formamidinium cation FA + , cesium cation Cs + or several of them; B is an inorganic, organic or organic-inorganic hybrid cation; in some embodiments, B includes lead cation Pb 2+ , tin cation Sn 2+ or one or two of them; C is an inorganic, organic or organic-inorganic hybrid cation; in some embodiments, C includes silver cation Ag + ; D is an inorganic, organic or organic-inorganic hybrid cation; in some embodiments, D includes bismuth cation Bi 3+ , antimony cation Sb 3+ , indium cation In3+ one or more of them; X is an inorganic, organic or organic-inorganic hybrid anion; in some embodiments, X includes fluoride anion F - , chloride anion Cl - , bromide anion Br - , iodide anion I - one or more of them.
[0078] In addition to the light absorption layer 10, the perovskite solar cell 100 may further include other film layer structures. In some embodiments, the other film layer structures may include a substrate structure, a first electrode layer, a hole transport layer, an electron transport layer, and a second electrode layer. The light absorption layer 10 is disposed between the hole transport layer and the electron transport layer.
[0079] In some embodiments, the substrate structure may be made of a rigid material or a flexible material. In some embodiments, the substrate structure may be made of transparent glass material. The material of the substrate structure is specifically set according to needs, and the present application does not make any limitations.
[0080] The passivation layer 20 refers to a film layer formed between the light absorption layer 10 and other film layers, and is used to passivate the interface defects of the light absorption layer 10.
[0081] The passivation material refers to a material that can passivate the defects of the perovskite solar cell 100. In some embodiments, the passivation material may be dispersed in the light absorption layer 10 and react with the perovskite material to passivate the anion defects and / or cation defects of the perovskite material. In some embodiments, the passivation material forms a passivation layer 20 on the surface of the light absorption layer 10, and the passivation material can passivate the defects on the surface of the light absorption layer 10. In some embodiments, the passivation material is dispersed in the light absorption layer 10, and the passivation material can passivate the bulk defects of the light absorption layer 10. In some embodiments, the passivation material is dispersed in the light absorption layer 10, and a passivation layer 20 is also formed on the surface of the light absorption layer 10. The passivation material can passivate both the bulk defects and the surface defects of the light absorption layer 10. In some embodiments, the passivation material in the light absorption layer 10 and the passivation material forming the passivation layer 20 may be the same or different, and are specifically set according to needs.
[0082] In some embodiments, the passivation material may be a salt substance including cations and anions. Among them, the anion of the passivation material includes a halogen anion, and the halogen anion is used to passivate the anion defects of the perovskite material. In some embodiments, the anion of the passivation material may only include a single halogen anion, or may include two or more mixed halogen anions.
[0083] In some embodiments, the cations of the passivation material may include a first end group and a second end group, which are used to passivate the cation defects of the perovskite material. In some embodiments, the first end group and the second end group may be the same or different. When the first end group and the second end group are different, the first end group and the second end group may passivate the same cation defect or different cation defects of the perovskite material. In some embodiments, the first end group and the second end group may be directly bonded or indirectly bonded. In some embodiments, the first end group may be bonded to the second end group through a middle group. In some embodiments, the dipole moment of the passivation material molecule, i.e., the intramolecular charge distribution, can be adjusted by regulating the electronegativity difference between the first end group and the second end group. The built-in electric field generated by the dipole moment has a unique direction and magnitude. The direction of the electric field points from the positive charge to the negative charge, and the magnitude of the built-in electric field is proportional to the magnitude of the dipole moment. Therefore, in some cases, a built-in electric field is formed between the light absorption layer 10 and the adjacent charge transport layer, which is beneficial to the extraction and transport of electrons.
[0084] The N-containing cation refers to an ionic form that loses the outer electrons to achieve a relatively stable structure, and the ion contains the nitrogen N element. The oxygen-containing group refers to a group containing M=O and / or M-O chemical bonds. In some embodiments, M may be at least one of the elements carbon C, phosphorus P, sulfur S, and boron B. According to the selection of the first end group and the second end group, at least the first end group is a positively charged group (N-containing cation), and the second end group may be a positively charged group (N-containing cation) or an uncharged group (oxygen-containing group). The molecular formula of the perovskite material includes ABX3 or A2CDX6. The N-containing cation is used to passivate the A-site cation defects of the perovskite material, and the oxygen-containing group is used to passivate the cation defects at the B-site, C-site, or D-site.
[0085] The embodiments of the present application passivate the anion defects of the perovskite material through the anions of the provided passivation material, and passivate the cation defects of the perovskite material through the cations of the provided passivation material, realizing the passivation of the defects in the perovskite material, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0086] Specifically, the anions of the perovskite material in the light absorption layer 10 include halogen anions. There are many halogen vacancy defects on the surface and grain boundaries of the light absorption layer 10, resulting in a decrease in the photoelectric conversion efficiency of the corresponding perovskite solar cell 100. At the same time, these halogen vacancy defects are also likely to increase the recombination rate of electrons and holes, leading to a decrease in the stability of the perovskite solar cell 100. Therefore, the halogen vacancy defect is an important problem affecting the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0087] In the solution where the passivation material is dispersed in the light absorption layer 10, the anion of the passivation material includes a halogen anion, which can fill the halogen vacancy defects in the bulk phase of the perovskite material, improve the photoelectric conversion efficiency of the perovskite solar cell 100, and can also reduce the recombination rate of electrons and vacancies, thereby enhancing the stability of the perovskite solar cell 100.
[0088] In the solution where the passivation material forms a passivation layer 20 on one side of the light absorption layer 10, the anion of the passivation material includes a halogen anion, which can fill the halogen vacancy defects at the interface of the perovskite material, reduce the ionic migration of the halogen anion of the perovskite material from the perovskite bulk phase to the surface of the light absorption layer 10, thereby improving the photoelectric conversion efficiency of the perovskite solar cell 100, and can also reduce the recombination rate of electrons and vacancies, enhancing the stability of the perovskite solar cell 100.
[0089] In addition, while the passivation material passivates the halogen vacancy defects of the perovskite material, since its cation can also passivate the cation defects of the perovskite material, in the case of adding one passivation material, multiple defects of the perovskite material can be passivated simultaneously, which can not only improve the photoelectric conversion efficiency and stability of the perovskite solar cell 100, but also reduce the impact on the device performance of the perovskite solar cell 100 compared with the solution of adding multiple passivation materials to passivate multiple defects of the perovskite material.
[0090] In some embodiments, the halogen anion includes F - 、Cl - 、Br - 、I - and at least one of them.
[0091] Among them, F - refers to the fluoride anion, Cl - refers to the chloride anion, Br - refers to the bromide anion, and I - refers to the iodide anion.
[0092] The anion of the perovskite material in the light absorption layer 10 includes a single halogen anion. The halogen anion of the passivation material can be the same as or different from the halogen anion of the perovskite material. In some embodiments, the anion of the perovskite material in the light absorption layer 10 includes a single halogen anion, and the halogen anion of the passivation material is different from the halogen anion of the perovskite material. The introduction of the halogen anion of the passivation material causes a certain shrinkage or expansion distortion of the lattice of the perovskite material in the light absorption layer 10, reducing the migration of the halogen anion of the perovskite material, thereby further improving the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0093] The anions of the perovskite material in the light absorption layer 10 include mixed halogen anions. The halogen anions of the passivation material can be different from any of the halogen anions of the perovskite material, or can be the same as one of the mixed halogen anions of the perovskite material.
[0094] The anions of the perovskite material in the light absorption layer 10 include halogen anions and non-halogen anions. The halogen anions of the passivation material can be the same as the halogen anions of the perovskite material, or can be different from the halogen anions of the perovskite material.
[0095] The embodiments of the present application can design and / or adjust the specific scheme of the halogen anions of the passivation material according to the anions of the perovskite material in the light absorption layer 10, so as to further improve the passivation effect and improve the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0096] In some embodiments, the halogen anion is Br - 。
[0097] Among them, in some embodiments, the anions of the perovskite material in the light absorption layer 10 include iodine anions and bromine anions, and the halogen anions of the passivation material are bromine anions. Since the radius of the bromine anions of the passivation material is small, it causes a certain shrinkage distortion of the perovskite material lattice in the light absorption layer 10, thereby being beneficial to reducing the anion migration in the light absorption layer 10, and thus can further improve the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0098] The embodiments of the present application use a passivation material with bromine anions as the halogen anions, which is beneficial to reducing the anion migration in the light absorption layer 10, and thus can further improve the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0099] In some embodiments, the N-containing cation is selected from at least one of –N(R1R2R3) + 、=N(R1R2) + 、–NR4-C(R5R6) + wherein, R1, R2, R3, and R4 are independently selected from any one of H, substituted or unsubstituted aliphatic hydrocarbon groups with 1 to 10 carbon atoms, substituted or unsubstituted aromatic groups with 6 to 15 ring atoms, and substituted or unsubstituted heteroaromatic groups with 1 to 15 ring atoms; R5 and R6 are independently selected from any one of H, NH2, and substituted or unsubstituted aliphatic hydrocarbon groups with 1 to 10 carbon atoms, wherein at least one of R5 and R6 is NH2, or, R5 and R6 are =NH2.
[0100] Among them, in some embodiments, the aliphatic hydrocarbon group includes an alkyl group or an alkenyl group. Exemplarily, the aromatic group having 6 to 15 ring-forming atoms, whether substituted or unsubstituted, may be at least one of a phenyl group and its substituents, a cycloalkyl group and its substituents, a biphenyl group and its substituents, and a naphthyl group and its substituents. Exemplarily, the heteroaromatic group having 1 to 15 ring-forming atoms, whether substituted or unsubstituted, may be at least one of a furan group and its substituents, a pyrrole group and its substituents, a thiophene group and its substituents, an imidazole group and its substituents, a thiazole group and its substituents, a pyridine group and its substituents, a pyran group and its substituents, a pyrimidine group and its substituents, and a quinoline group and its substituents.
[0101] Embodiments of the present application can design and / or adjust the specific scheme of the cations of the passivation material according to the cations of the perovskite material in the light absorption layer 10, so as to improve the cation passivation effect and improve the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0102] In some embodiments, the N-containing cations include at least one of a methylamine cation, a formamidine cation, an ethylamine cation, and a guanidine cation.
[0103] Among them, the chemical formula of the methylamine cation is -NH2 + -CH3. The chemical formula of the formamidine cation is -NH-CH=NH2 + . The chemical formula of the ethylamine cation is -NH2 + -CH2CH3. The chemical formula of the guanidine cation is -NH-C(NH2)=NH2 + .
[0104] Embodiments of the present application can design and / or adjust the specific scheme of the cations of the passivation material according to the cations of the perovskite material in the light absorption layer 10, so as to further improve the cation passivation effect and improve the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0105] In some embodiments, the oxygen-containing group includes any one of a phosphonic acid group, a sulfonic acid group, a carboxylic acid group, a sulfinic acid group, a boric acid group, or a silicic acid group.
[0106] Among them, the chemical formula of the phosphoric acid group is -PO(OH)2. The chemical formula of the sulfonic acid group is -SO3H. The chemical formula of the carboxylic acid group is -COOH. The chemical formula of the sulfinic acid group is -SO2H. The chemical formula of the boric acid group is -B(OH)2. The chemical formula of the silicic acid group is -Si(OH)3.
[0107] Embodiments of the present application can passivate the metal cations of the perovskite material in the light absorption layer 10 (such as the B-site cations in the perovskite material of the ABX3 configuration or the C-site and / or D-site cations in the perovskite material of the A2CDX6 configuration) through the setting of oxygen-containing groups, so that while the passivation material passivates the anion defects of the perovskite material, it can also passivate the metal cation defects of the perovskite material, and can further improve the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0108] In some embodiments, the cation of the passivation material further includes a middle group connecting the first end group and the second end group; the middle group includes at least one of a substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, a substituted or unsubstituted aromatic group with 6 to 15 ring atoms, and a substituted or unsubstituted heteroaromatic group with 1 to 15 ring atoms.
[0109] Among them, the aliphatic hydrocarbon group can include an alkyl group, an alkenyl group, or an alkynyl group, which can be designed according to needs. Exemplarily, the substituted or unsubstituted aromatic group with 6 to 15 ring atoms can be at least one of phenyl and its substituents, cycloalkyl and its substituents, biphenyl and its substituents, and naphthyl and its substituents. Exemplarily, the substituted or unsubstituted heteroaromatic group with 1 to 15 ring atoms can be at least one of furan and its substituents, pyrrole and its substituents, thiophene and its substituents, imidazole and its substituents, thiazole and its substituents, pyridine and its substituents, pyran and its substituents, pyrimidine and its substituents, and quinoline and its substituents.
[0110] Among them, the substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, the substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, the substituted or unsubstituted aromatic group with 6 to 15 ring atoms, and the substituted or unsubstituted heteroaromatic group with 1 to 15 ring atoms have certain hydrophobicity. It can be understood that the middle group can include only any one of the substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, the substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, the substituted or unsubstituted aromatic group with 6 to 15 ring atoms, and the substituted or unsubstituted heteroaromatic group with 1 to 15 ring atoms, or can include any several of the substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, the substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, the substituted or unsubstituted aromatic group with 6 to 15 ring atoms, and the substituted or unsubstituted heteroaromatic group with 1 to 15 ring atoms. That is to say, there are various structural schemes for the middle group, and the passivation effect can be adjusted by regulating the structural scheme of the middle group.
[0111] Embodiments of the present application can regulate the size of the passivation material molecules by regulating the carbon chain length and / or the number of cyclic groups of the middle group, so that the passivation material molecules match their set positions, which is conducive to achieving a good passivation effect; and can regulate the hydrophobic performance of the passivation material by regulating the carbon chain length and / or the number of cyclic groups of the middle group. When the passivation material plays a role in passivating defects, it can also play a role in regulating the water and oxygen stability of the device, further improving the stability of the perovskite solar cell 100.
[0112] In some embodiments, the general formula of the cation of the passivation material includes A1 - A2 - A3, where A1 includes -NH2 + (CH3), -NH - C=NH2 + , -NH - C(NH2)NH2 + , -NH3 + , =NH2 + and at least one of them; A3 includes -NH2 + (CH3), -NH - C(NH2)NH2 + , -NH3 + , =NH2 + , -COOH, -B(OH)2, -PO(OH)2, -SO3H; A2 includes at least one of an aliphatic hydrocarbon group with 2 - 4 carbon atoms, a phenyl group, and a cycloalkyl group.
[0113] Among them, the aliphatic hydrocarbon group can include an alkyl group, an alkene group, or an alkyne group, which can be designed according to needs. The structural formula of the phenyl group is The structural formula of the cycloalkyl group is It can be understood that the two substitution positions in the phenyl group can be set at the para position of the example structural formula, or other setting methods can be adopted, such as the ortho position or the meta position, which can be specifically set according to needs. Similarly, for the biphenyl group and the cycloalkyl group, in addition to the substitution position setting scheme of the example structural formula, there are also other setting methods, which can be specifically set according to needs.
[0114] Embodiments of the present application can achieve a good passivation effect by providing some alternative schemes of the passivation material cation, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0115] In some embodiments, the cation of the passivation material includes at least one of the following structural formulas:
[0116]
[0117] Embodiments of the present application can achieve a good passivation effect by providing specific solutions for some passivation material cations, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0118] Please refer to Figures 3-4 , Figure 3 which is the third schematic structural diagram of the perovskite solar cell provided by the embodiments of the present application, Figure 4 and which is the fourth schematic structural diagram of the perovskite solar cell provided by the embodiments of the present application.
[0119] In some embodiments, referring to Figure 3 , the perovskite solar cell 100 further includes a substrate structure 30; the light absorption layer 10 is located on one side of the substrate structure 30, the passivation material is dispersed in the perovskite material, and the concentration of the anions of the passivation material gradually decreases along the direction of the light absorption layer 10 towards the substrate structure 30; and / or, a passivation layer 20 is provided on the side of the light absorption layer 10 away from the substrate structure 30, the passivation layer 20 includes a passivation material, and some anions of the passivation material are distributed in the light absorption layer 10, and the concentration of the anions of the passivation material distributed in the light absorption layer 10 gradually decreases along the direction of the light absorption layer 10 towards the substrate structure 30.
[0120] Among them, the substrate structure 30 is used to carry film layer structures such as the light absorption layer 10. In some embodiments, the substrate structure 30 is a transparent structure for allowing light to reach the light absorption layer 10. In some embodiments, the substrate structure 30 can be made of a hard material or a flexible material, which is specifically set according to needs. In some embodiments, the anions of the perovskite material in the light absorption layer 10 include halogen anions, and there are many halogen vacancy defects on the surface and grain boundaries of the light absorption layer 10, and the concentration of the halogen vacancy defects gradually increases along the direction from the substrate structure 30 towards the light absorption layer 10. The fact that the concentration of the anions of the passivation material gradually decreases along the direction of the light absorption layer 10 towards the substrate structure 30 can be characterized by Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS).
[0121] Embodiments of the present application achieve a good passivation effect by regulating the concentration distribution of anions of the passivation material in the light absorption layer 10, such that the anion concentration of the passivation material matches the halogen vacancy defect concentration of the light absorption layer 10. In addition, by regulating the concentration distribution of anions of the passivation material in the light absorption layer 10, the energy band of the light absorption layer 10 is bent, and the energy levels of the light absorption layer 10 and its adjacent carrier transport layer are more matched, promoting the carrier transport efficiency, thereby further promoting the improvement of the photoelectric conversion efficiency and stability of the perovskite solar cell 100. For example, the closer to the surface of the light absorption layer 10 away from the substrate structure 30, the more the conduction band bottom of the corresponding part moves downward, the more matched the energy level of this surface is with the carrier transport layer, and the higher the carrier transport efficiency.
[0122] Please refer to Figures 5-6 , Figure 5 which is the fifth structural schematic diagram of the perovskite solar cell provided by the embodiments of the present application, Figure 6 and which is the sixth structural schematic diagram of the perovskite solar cell provided by the embodiments of the present application.
[0123] In some embodiments, referring to Figure 5 ,the perovskite solar cell 100 includes a substrate structure 30, a first electrode layer 40, a hole transport layer 50, a light absorption layer 10, an electron transport layer 60, and a second electrode layer 70 that are sequentially stacked. The light absorption layer 10 includes a perovskite material and a passivation material dispersed in the perovskite material
[0124] In some embodiments, referring to Figure 6 ,the perovskite solar cell 100 includes a substrate structure 30, a first electrode layer 40, a hole transport layer 50, a light absorption layer 10, a passivation layer 20, an electron transport layer 60, and a second electrode layer 70 that are sequentially stacked; the light absorption layer 10 includes a perovskite material, and the passivation layer 20 includes a passivation material.
[0125] Among them, in some embodiments, the first electrode layer 40 can be a transparent conductive layer, and the transparent conductive layer can be made of at least one of fluorine-doped tin dioxide, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and zinc-doped indium oxide.
[0126] In some embodiments, the material of the hole transport layer 50 can include at least one of the following materials and their derivatives and materials obtained by doping or passivating them: nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz).
[0127] In some embodiments, the material of the electron transport layer 60 may include at least one of the following materials and their derivatives and the materials obtained by doping or passivation thereof: [6,6]-phenyl C61 butyric acid methyl ester (PC61BM), [6,6]-phenyl C71 butyric acid methyl ester (PC71BM), fullerene C60 (C60), fullerene C70 (C70), tin dioxide (SnO2).
[0128] In some embodiments, the second electrode layer 70 may include at least one of the following materials: silver Ag, copper Cu, carbon C, gold Au, aluminum Al, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, zinc-doped indium oxide.
[0129] In the embodiments of the present application, by introducing a passivation material into the provided perovskite solar cell 100, passivation of various defects of the perovskite material is achieved, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0130] In a second aspect, the embodiments of the present application provide a preparation method of a perovskite solar cell 100, which at least includes:
[0131] S11, providing a substrate structure 30.
[0132] S12, disposing a light absorption layer 10 on the substrate structure 30, and the light absorption layer 10 includes a perovskite material and a passivation material dispersed in the perovskite material.
[0133] Among them, the specific manner of forming the light absorption layer 10 in S12 may adopt the following scheme: configuring a precursor solution mixed with a perovskite precursor and a passivation material, forming the precursor solution on the substrate structure 30 by means of spin coating, spraying or blade coating, etc., and then performing treatments such as curing to form the light absorption layer 10. It can be understood that other manners may also be adopted to form the light absorption layer 10 in S12, as long as the formation of the light absorption layer 10 can be achieved. For example, the precursor containing the perovskite precursor and the passivation material can be deposited on the substrate structure 30 by means of inkjet printing or vapor deposition.
[0134] It should be noted that in some embodiments, other film layer structures may also be disposed on the substrate structure 30 in advance before forming the light absorption layer 10, for example:
[0135] In some embodiments, "disposing a light absorption layer 10 on the substrate structure 30" in S12 includes the following steps:
[0136] S121, forming a first electrode layer 40 on the substrate structure 30, and the first electrode layer 40 may be a transparent conductive layer.
[0137] S122. Form a light absorption layer 10 on the surface of the first electrode layer 40 away from the substrate structure 30.
[0138] In some embodiments, "setting the light absorption layer 10 on the substrate structure 30" in S12 includes the following steps:
[0139] S123. Form a first electrode layer 40 on the substrate structure 30. The first electrode layer 40 can be a transparent conductive layer.
[0140] S124. Form a hole transport layer 50 on the surface of the first electrode layer 40 away from the substrate structure 30.
[0141] S125. Form a light absorption layer 10 on the surface of the hole transport layer 50 away from the substrate structure 30. The perovskite solar cell 100 prepared in this embodiment has a reverse structure.
[0142] In some embodiments, after S12 "setting the light absorption layer 10 on the substrate structure 30", the following steps are further included:
[0143] S126. Form an electron transport layer 60 on the surface of the light absorption layer 10 away from the substrate structure 30.
[0144] S127. Form a second electrode layer 70 on the surface of the electron transport layer 60 away from the substrate structure 30.
[0145] In this application, in some embodiments, the preparation method of the perovskite solar cell 100 may further at least include:
[0146] S21. Provide a substrate structure 30.
[0147] S22. Set a light absorption layer 10 on the substrate structure 30. The light absorption layer 10 includes a perovskite material.
[0148] S23. Set a passivation layer 20 on the light absorption layer 10. The passivation layer 20 includes a passivation material. Among them, the substrate structure 30, the perovskite material, and the passivation material are as described above and will not be elaborated here.
[0149] Among them, in S22 "setting the light absorption layer 10 on the substrate structure 30", the perovskite material can be added to the set light absorption layer 10, or the passivation material and the perovskite material can be added.
[0150] It should be noted that for the setting scheme of "setting the light absorption layer 10 on the substrate structure 30" in S22, please refer to the setting scheme of "setting the light absorption layer 10 on the substrate structure 30" in S12, which will not be elaborated here.
[0151] The specific method of forming the passivation layer 20 in S23 may adopt the following solution: Prepare a solution of the passivation material, and form the passivation material solution on the surface of the light absorption layer 10 by means of spin coating, spraying or scraping, etc., and then perform treatments such as curing to form the passivation layer 20. It can be understood that other methods may also be adopted to form the passivation layer 20 in S23, as long as the formation of the passivation layer 20 can be achieved.
[0152] Through the provided method for preparing the perovskite solar cell 100 in the embodiment of the present application, the passivation material is introduced into the system of the perovskite solar cell 100. The anion of the perovskite material is passivated by the anion of the passivation material, and the cation of the perovskite material is passivated by the cation of the passivation material, realizing the passivation of various defects of the perovskite material, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell 100.
[0153] In some embodiments, after the step of S12 "arranging the light absorption layer 10 on the substrate structure 30, the light absorption layer 10 includes a perovskite material and a passivation material dispersed in the perovskite material", or after the step of S23 "arranging the passivation layer 20 on the light absorption layer 10, the passivation layer 20 includes a passivation material", it further includes:
[0154] S30, performing at least one of negative pressure treatment, temperature rise treatment and light irradiation treatment on the light absorption layer 10 or on the light absorption layer 10 and the passivation layer 20.
[0155] Among them, the stacked structure formed by S11 and S12 or by S21 - S23 is defined as a prefabricated part. The negative pressure treatment refers to a method of placing the prefabricated part in a vacuum environment and applying pressure to the prefabricated part in this environment for a period of time. The temperature rise treatment refers to a method of heating the prefabricated part at a certain temperature for a period of time. The light irradiation treatment refers to a method of irradiating the prefabricated part under certain light conditions.
[0156] In the embodiment of the present application, the concentration of the anion of the passivation material in the light absorption layer 10 gradually decreases along the direction of the light absorption layer 10 towards the substrate structure 30 through the above method, and the method is simple and easy to implement.
[0157] In some embodiments, the pressure range of the negative pressure treatment includes 50 Pa to 150 Pa. The pressure of the negative pressure treatment can be 50 Pa, 55 Pa, 60 Pa, 67 Pa, 70 Pa, 73 Pa, 80 Pa, 85 Pa, 90 MPa, 100 Pa, 105 Pa, 110 Pa, 120 Pa, 127 Pa, 130 Pa, 135 Pa, 140 Pa, 145 Pa, 150 Pa, etc., or a range composed of any two of the above values. For example, it can be 50 Pa to 90 Pa, 67 Pa to 85 Pa, 70 Pa to 100 Pa, 55 Pa to 105 Pa, 110 Pa to 145 Pa, 127 Pa to 135 Pa, 60 Pa to 150 Pa, etc.
[0158] In some embodiments, the temperature range of the heating treatment includes 50 °C to 100 °C. The temperature of the heating treatment can be 50 °C, 55 °C, 58.5 °C, 60 °C, 62.6 °C, 68 °C, 70 °C, 72 °C, 75 °C, 78.5 °C, 80 °C, 85 °C, 90 °C, 95 °C, 100 °C, etc., or a range composed of any two of the above values. For example, it can be 50 °C to 80 °C, 85 °C to 95 °C, 62.6 °C to 78.5 °C, 60 °C to 72 °C, 78.5 °C to 95 °C, 90 °C to 100 °C, etc.
[0159] In some embodiments, the irradiance range of the light treatment includes 100 W / m 2 ~1000 W / m 2 ². The irradiance of the light treatment is 100 W / m 2 ², 180 W / m 2 ², 200 W / m 2 ², 235 W / m 2 ², 300 W / m 2 ², 350 W / m 2 ², 400 W / m 2 ², 450 W / m 2 ², 500 W / m 2 ², 550 W / m 2 ², 580 W / m 2 ², 600 W / m 2 ², 633 W / m 2 ², 650 W / m 2 ², 700 W / m 2 ², 720 W / m 2 ², 800 W / m 2 ², 850 W / m 2 ², 900 W / m 2 ², 927 W / m 2 ², 980 W / m 2 ², 1000 W / m 2etc., or a range composed of any two of the above values. For example, it can be 100 W / m 2 ~650 W / m 2 、200 W / m 2 ~235 W / m 2 、235 W / m 2 ~500 W / m 2 、180 W / m 2 ~450 W / m 2 、300 W / m 2 ~900 W / m 2 、350 W / m 2 ~550 W / m 2 、180 W / m 2 ~700 W / m 2 、720 W / m 2 ~800 W / m 2 、850 W / m 2 ~1000 W / m 2 etc.
[0160] By providing the specific numerical range of the above processing method in the embodiments of the present application, a solution is achieved in which the concentration of the anion of the passivation material in the light absorption layer 10 gradually decreases along the direction of the light absorption layer 10 towards the substrate structure 30.
[0161] In some embodiments, the irradiance range of the light treatment includes 100 W / m 2 ~500 W / m 2 . The irradiance of the light treatment is 100 W / m 2 、180 W / m 2 、200 W / m 2 、235 W / m 2 、300 W / m 2 、350 W / m 2 、400 W / m 2 、450 W / m 2 、500 W / m 2 etc., or a range composed of any two of the above values. For example, it can be 100 W / m 2 ~235 W / m 2 、200 W / m 2 ~235 W / m 2 、235 W / m 2 ~350 W / m 2 、180 W / m 2 ~450 W / m 2 、300 W / m 2 ~500 W / m 2 etc.
[0162] In the embodiments of the present application, within the range of irradiance in the above range, it is possible to not only achieve a gradual decrease in the concentration of anions of the passivation material in the light absorption layer 10 along the direction of the light absorption layer 10 towards the substrate structure 30, but also reduce the impact on the perovskite material of the light absorption layer, thereby improving the photoelectric conversion efficiency of the perovskite solar cell 100.
[0163] In some embodiments, the time range of the negative pressure treatment includes 20 s to 30 s. The time of the negative pressure treatment can be 20 s, 20.5 s, 21 s, 21.5 s, 22 s, 22.5 s, 23 s, 23.5 s, 24 s, 24.5 s, 25 s, 25.5 s, 26 s, 26.5 s, 27 s, 27.5 s, 28 s, 28.5 s, 29 s, 29.5 s, 30 s, etc., or a range composed of any two of the above values. For example, it can be 20 s to 23.5 s, 23 s to 27.5 s, 25 s to 29 s, 28 s to 30 s, etc.
[0164] In some embodiments, the time range of the heating treatment includes 5 min to 15 min. The time of the heating treatment can be 5 min, 5.5 min, 6 min, 6.5 min, 7 min, 7.5 min, 8 min, 8.5 min, 9 min, 9.5 min, 10 min, 10.5 min, 11 min, 11.5 min, 12 min, 12.5 min, 13 min, 13.5 min, 14 min, 14.5 min, 15 min, etc., or a range composed of any two of the above values. For example, it can be 5 min to 9 min, 8 min to 11 min, 9.5 min to 12.5 min, 12 min to 15 min, etc.
[0165] In some embodiments, the time range of the light irradiation treatment includes 5 min to 15 min. The time of the light irradiation treatment can be 5 min, 5.5 min, 6 min, 6.5 min, 7 min, 7.5 min, 8 min, 8.5 min, 9 min, 9.5 min, 10 min, 10.5 min, 11 min, 11.5 min, 12 min, 12.5 min, 13 min, 13.5 min, 14 min, 14.5 min, 15 min, etc., or a range composed of any two of the above values. For example, it can be 5 min to 9 min, 8 min to 11 min, 9.5 min to 12.5 min, 12 min to 15 min, etc.
[0166] The embodiments of the present application achieve the solution of gradually decreasing the concentration of anions of the passivation material in the light absorption layer 10 along the direction of the light absorption layer 10 towards the substrate structure 30 by providing the specific time range of the above treatment method.
[0167] In some embodiments, the time for the heating treatment is 10 min; and / or, the time for the light irradiation treatment is 10 min.
[0168] The embodiments of the present application realize the scheme that the concentration of the anions of the passivation material in the light absorption layer 10 gradually decreases along the direction of the light absorption layer 10 towards the substrate structure 30 by providing the specific time for the heating treatment and / or the light irradiation treatment.
[0169] Please refer to Figure 7 , Figure 7 which is a schematic structural diagram of an electrical device provided by the embodiments of the present application.
[0170] In a third aspect, referring to Figure 7 , the embodiments of the present application provide an electrical device 1000, including a perovskite solar cell 100 prepared by any of the perovskite solar cells 100 provided in the first aspect or the preparation method of any of the perovskite solar cells 100 provided in the second aspect.
[0171] In the embodiments of the present application, the perovskite solar cell 100 serves as the power source of the electrical device 1000 to realize the normal operation of the electrical device 1000. The electrical device 1000 adopts the perovskite solar cell 100 provided by the present application and at least has the same advantages as the perovskite solar cell 100, which can improve the battery performance of the electrical device 1000. Exemplarily, the electrical device 1000 may include lighting devices, display devices, new energy vehicles, etc.
[0172] Please refer to Figure 8 , Figure 8 which is a schematic structural diagram of a power generation device provided by the embodiments of the present application.
[0173] In a fourth aspect, referring to Figure 8 , the embodiments of the present application provide a power generation device 2000, including a perovskite solar cell 100 prepared by any of the perovskite solar cells 100 provided in the first aspect or the preparation method of any of the perovskite solar cells 100 provided in the second aspect.
[0174] In the embodiments of the present application, the perovskite solar cell 100 serves as the energy source of the power generation device 2000 to realize the power output of the power generation device 2000. The power generation device 2000 adopts the perovskite solar cell 100 provided by the present application and at least has the same advantages as the perovskite solar cell 100, which can improve the power generation performance of the power generation device 2000. Exemplarily, the power generation device 2000 can be applied to fields such as building power consumption, wearable device power consumption, smart phone power consumption, vehicle-mounted battery power consumption, etc.
[0175] To make the technical problems, technical solutions, and beneficial effects solved by the embodiments of the present application clearer, the following will further elaborate in detail in combination with the embodiments and the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and in no way constitutes any limitation to the present application and its application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.
[0176] The features and performance of the present application will be further described in detail below in combination with the embodiments.
[0177] Embodiment 1
[0178] Preparation of perovskite solar cell 100
[0179] (1) Take a fluorine-doped tin dioxide conductive glass with a specification of 2.0 cm * 2.0 cm, and remove 0.35 cm of fluorine-doped tin dioxide at both ends by laser etching to expose the glass substrate; ultrasonically clean the etched fluorine-doped tin dioxide conductive glass several times with water, acetone, and isopropanol in sequence; dry the solvent on the surface of the fluorine-doped tin dioxide conductive glass with a nitrogen gun, and place it in an ultraviolet ozone machine for ultraviolet ozone treatment.
[0180] (2) Spin-coat a nanoscale nickel oxide precursor solution with a concentration of 10 mg / mL (solvent is water) on the fluorine-doped tin dioxide conductive glass after ultraviolet ozone treatment at a rate of 4000 rpm, anneal on a hot plate at 100 °C for 30 min, and cool to room temperature to form a hole transport layer 50 with a thickness of 30 nm.
[0181] (3) Weigh 0.66 mmol of lead iodide (in excess), 0.4 mmol of lead bromide, 0.32 mmol of bromomethylammonium, 0.48 mmol of iodomethylammonium, 0.12 mmol of cesium iodide, and 0.08 mmol of cesium bromide, dissolve them in 1 mL of a mixed solution of DMF and DMSO (the volume ratio of DMF to DMSO is 4:1), and stir for 1 h. Then add 0.001 mmol of tetrabutylammonium bromide, stir overnight, and filter with a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. Spin-coat the perovskite precursor solution on the obtained hole transport layer 50 at a rate of 3000 rpm, anneal on a hot plate at 100 °C for 30 min, and cool to room temperature to obtain a light absorption layer 10 with a thickness of 500 nm.
[0182] (4) The passivation material (the structural formula of its cation is The anion is bromide anion) is dissolved in isopropanol, and after mixing, an isopropanol solution of the passivation material with a concentration of 0.5 mg / mL is obtained; the isopropanol solution of the passivation material is spin-coated on the light absorption layer 10 at a rate of 3000 rpm, annealed on a hot plate at 100 °C for 10 min, and cooled to room temperature to form a passivation layer 20 with a thickness of 100 nm.
[0183] (5) Place the product of step (4) under a light illumination condition with a radiation intensity of 100 W / m 2 and irradiate for 10 min.
[0184] (6) Deposit C60 with a thickness of 50 nm on the passivation layer 20 by evaporation to form an electron transport layer 60, and then deposit BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) with a thickness of 20 nm on the surface of the electron transport layer 60 as an insertion layer; then deposit Cu with a thickness of 100 nm on the surface of the insertion layer as a second electrode layer 70 to obtain a battery device labeled as Battery 1.
[0185] Examples 2 to 16 are similar to Example 1, except that the passivation materials used in step (4) are different. Examples 17 to 22 are similar to Example 1, except that the post-treatment methods used in step (5) are different. Examples 23 to 24 are similar to Example 1, except that the radiation intensities of the light illumination treatment in step (5) are different.
[0186] Example 25 is similar to Example 1, except that: Example 25 does not have step (4) of Example 1, and in step (3) of Example 25, the passivation material is dissolved in the perovskite precursor solution with a final concentration of 0.5 mg / ml, stirred for 3 h, and filtered through a 0.22 μm organic filter membrane to obtain a perovskite precursor solution containing the passivation material. The perovskite precursor solution containing the passivation material is spin-coated on the obtained hole transport layer 50 at a rate of 3000 rpm, annealed on a hot plate at 100 °C for 30 min, and cooled to room temperature to obtain the light absorption layer 10. It should be noted that the formulation of the perovskite precursor solution in this example is the same as that of the perovskite precursor solution in Example 1. The passivation material in this example is the same as the passivation material in step (4) of Example 1.
[0187] Example 26 is similar to Example 1, except that: in step (3) of Example 26, the passivation material is dissolved in the perovskite precursor solution with a final concentration of 0.5 mg / ml, stirred for 3 h, and filtered through a 0.22 μm organic filter membrane to obtain a perovskite precursor solution containing the passivation material. The perovskite precursor solution containing the passivation material is spin-coated on the obtained hole transport layer 50 at a rate of 3000 rpm, annealed on a hot plate at 100 °C for 30 min, and cooled to room temperature to obtain the light absorption layer 10. It should be noted that the formulation of the perovskite precursor solution in this example is the same as that in Example 1. The passivation material in this example is the same as the passivation material in step (4) of Example 1.
[0188] Example 27 is similar to Example 1, except that Example 27 does not have step (5) of Example 1.
[0189] Example 28 is similar to Example 25, except that Example 28 does not have step (5) of Example 25.
[0190] Example 29 is similar to Example 26, except that Example 28 does not have step (5) of Example 25.
[0191] Comparative Example 1 is similar to Example 1, except that Comparative Example 1 does not have steps (4) and (5) of Example 1.
[0192] The perovskite solar cells 100 prepared in the above Examples 1 to 29 and Comparative Example 1 were subjected to relevant performance tests, and the specific results are shown in Table 1.
[0193] Performance Test of Perovskite Solar Cell 100
[0194] The test was carried out in accordance with the IEC61215 standard. Using a Gammadata solar simulator, the intensity of the light was calibrated with a crystalline silicon solar cell to reach one sun intensity (the solar test standard is AM1.5). The perovskite solar cell 100 was connected to a digital source meter, and its photoelectric conversion efficiency was measured under illumination.
[0195] Table 1: Test Results of the Performance of Perovskite Solar Cells in Examples 1 to 29 and Comparative Example 1
[0196]
[0197]
[0198]
[0199]
[0200] As can be seen from Table 1, compared with Comparative Example 1, in Examples 1 to 29, by introducing the provided passivation material into the bulk and / or interface of the light absorption layer, the perovskite solar cell 100 formed has higher photoelectric conversion efficiency and stability.
[0201] In several embodiments provided in the present application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed couplings or direct couplings or communication connections to each other can be through some interfaces, indirect couplings or communication connections of devices or units, and can be electrical, mechanical, or other forms.
[0202] In addition, in each embodiment of the present application, each functional unit can be integrated in a processing unit, or each unit can exist physically alone, or two or more units can be integrated in one unit. The above integrated unit can be implemented in the form of hardware or in the form of a software functional unit.
[0203] The above is only the implementation manner of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present application.
Claims
1. A perovskite solar cell, characterized in that, At least including: A light absorption layer, where the light absorption layer includes a perovskite material and a passivation material dispersed in the perovskite material; Or At least including: a light absorption layer and a passivation layer disposed on one side of the light absorption layer, the light absorption layer includes a perovskite material, and the passivation layer includes a passivation material; Wherein, the anion of the passivation material includes a halogen anion; the cation of the passivation material includes a first end group and a second end group; the first end group includes a nitrogen-containing cation; the second end group includes at least one of a nitrogen-containing cation and an oxygen-containing group.
2. The perovskite solar cell according to claim 1, characterized in that, The halogen anions include F - , Cl - , Br - , I - and at least one of them.
3. The perovskite solar cell according to claim 1, characterized in that, The halogen anion is Br - .
4. The perovskite solar cell according to any one of claims 1 to 3, characterized in that, The N-containing cation is selected from –N(R1R2R3) + , =N(R1R2) + , –NR4-C(R5R6) + and at least one of the above, wherein R1, R2, R3, and R4 are independently selected from any one of H, a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 15 ring-forming atoms, and a substituted or unsubstituted heteroaromatic group having 1 to 15 ring-forming atoms; R5 and R6 are independently selected from any one of H, NH2, and a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 10 carbon atoms, wherein at least one of R5 and R6 is NH2, or R5 and R6 are =NH2.
5. The perovskite solar cell according to any one of claims 1 to 4, characterized in that, The nitrogen-containing cation includes at least one of a methylamine cation, a formamidine cation, an ethylamine cation, and a guanidine cation.
6. The perovskite solar cell according to any one of claims 1 to 5, characterized in that, The oxygen-containing group includes any one of a phosphonic acid group, a sulfonic acid group, a carboxylic acid group, a sulfinic acid group, a boric acid group, or a silicic acid group.
7. The perovskite solar cell according to any one of claims 1 to 6, characterized in that, The cation of the passivation material further includes a middle group connecting the first end group and the second end group; the middle group includes at least one of a substituted or unsubstituted aliphatic hydrocarbon group with 1 to 10 carbon atoms, a substituted or unsubstituted aromatic group with 6 to 15 ring atoms, and a substituted or unsubstituted heteroaromatic group with 1 to 15 ring atoms.
8. The perovskite solar cell according to any one of claims 1 to 7, characterized in that, The general formula of the cations of the passivating material includes A1-A2-A3, wherein A1 includes -NH2 + (CH3), -NH-C=NH2 + , -NH-C(NH2)NH2 + , -NH3 + , =NH2 + and at least one of the following; A3 includes -NH2 + (CH3), -NH-C(NH2)NH2 + , -NH3 + , =NH2 + , -COOH, -B(OH)2, -PO(OH)2, -SO3H, or at least one of the following; A2 includes at least one of an aliphatic hydrocarbon group having 2 to 4 carbon atoms, a phenyl group, and a cycloalkyl group.
9. The perovskite solar cell according to claim 8, characterized in that, The cation of the passivation material includes at least one of the following structural formulas:
10. The perovskite solar cell according to any one of claims 1 to 9, characterized in that, The perovskite solar cell further includes a substrate structure; the light absorption layer is located on one side of the substrate structure, the passivation material is dispersed in the perovskite material, and the concentration of the anion of the passivation material gradually decreases along the direction of the light absorption layer towards the substrate structure; and / or, the passivation layer is disposed on the side of the light absorption layer away from the substrate structure, the passivation layer includes a passivation material, and a part of the anion of the passivation material is distributed in the light absorption layer, and the concentration of the anion of the passivation material distributed in the light absorption layer gradually decreases along the direction of the light absorption layer towards the substrate structure.
11. The perovskite solar cell according to any one of claims 1 to 10, characterized in that, The perovskite solar cell includes a substrate structure, a first electrode layer, a hole transport layer, a light absorption layer, an electron transport layer, and a second electrode layer stacked in sequence; the light absorption layer includes a perovskite material and a passivation material dispersed in the perovskite material; or, The perovskite solar cell includes a substrate structure, a first electrode layer, a hole transport layer, a light absorption layer, a passivation layer, an electron transport layer, and a second electrode layer stacked in sequence; the light absorption layer includes a perovskite material, and the passivation layer includes a passivation material.
12. A method for preparing a perovskite solar cell according to any one of claims 1 to 11, characterized in that, At least including: Providing a substrate structure; Setting a light absorption layer on the substrate structure, the light absorption layer includes a perovskite material and a passivation material dispersed in the perovskite material; Or, at least including: Providing a substrate structure; Setting a light absorption layer on the substrate structure, the light absorption layer includes a perovskite material; setting a passivation layer on the light absorption layer, the passivation layer includes a passivation material.
13. The method for preparing a perovskite solar cell according to claim 12, characterized in that,After the step of setting a light absorption layer on the substrate structure, the light absorption layer includes a perovskite material and a passivation material dispersed in the perovskite material, or after the step of setting a passivation layer on the light absorption layer, the passivation layer includes a passivation material, further including: Performing at least one of negative pressure treatment, heating treatment, and light irradiation treatment on the light absorption layer or on the light absorption layer and the passivation layer.
14. The method for preparing a perovskite solar cell according to claim 13, wherein, The pressure range of the negative pressure treatment includes 50 Pa to 150 Pa; and / or, the temperature range of the heating treatment includes 50 °C to 100 °C; and / or, the irradiance range of the light treatment includes 100 W / m 2 ~ 1000 W / m 2 .
15. The method for preparing a perovskite solar cell according to claim 14, wherein, The irradiance range of the light treatment includes 100 W / m 2 ~500 W / m 2 .
16. The method for preparing a perovskite solar cell according to claim 14 or 15, wherein, The time range of the negative pressure treatment includes 20 s to 30 s; and / or, the time range of the heating treatment includes 5 min to 15 min; and / or, the time range of the light irradiation treatment includes 5 min to 15 min.
17. The method for preparing a perovskite solar cell according to claim 16, wherein, The time of the heating treatment is 10 min; and / or, the time of the light irradiation treatment is 10 min.
18. An electrical equipment, wherein, Including a perovskite solar cell prepared by the perovskite solar cell according to any one of claims 1 to 11 or the preparation method of the perovskite solar cell according to any one of claims 12 to 17.
19. A power generation equipment, wherein, Including a perovskite solar cell prepared by the perovskite solar cell according to any one of claims 1 to 11 or the preparation method of the perovskite solar cell according to any one of claims 12 to 17.