Photoelectric device and preparation method thereof

Abstract

The invention discloses a photoelectric device and a preparation method of the photoelectric device, the photoelectric device comprises an anode and a cathode which are oppositely arranged, and an electronic function layer arranged between the anode and the cathode, the electronic function layer comprises a first electronic function sub-layer and a second electronic function sub-layer, the second electronic function sub-layer is closer to the cathode than the first electronic function sub-layer, the material of the first electronic function sub-layer comprises a first metal oxide, the material of the second electronic function sub-layer comprises nanoparticles with core-shell structures, and the material of the core of each nanoparticle is a second metal oxide, so that the problem of cathode oxidation is effectively solved, and the service life of the cathode is prolonged. The performance stability of the photoelectric device is improved, and the service life of the photoelectric device is prolonged.

Description

Technical Field

[0001] This application relates to the field of optoelectronic technologies, and particularly to an optoelectronic device and a method for manufacturing the optoelectronic device. Background Art

[0002] Optoelectronic devices refer to a class of devices that emit light through the injection and recombination of charge carriers, including but not limited to organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Optoelectronic devices have a "sandwich" structure, that is, they include an anode, a cathode, and a light-emitting layer. Among them, the anode and the cathode are disposed opposite to each other, and the light-emitting layer is disposed between the anode and the cathode. The light-emitting principle of optoelectronic devices is as follows: electrons are injected from the cathode of the device into the light-emitting region, holes are injected from the anode of the device into the light-emitting region, electrons and holes recombine in the light-emitting region to form excitons, and the recombined excitons release photons in the form of radiative transitions, thereby emitting light.

[0003] After years of development, optoelectronic devices have made great progress in terms of performance indicators and also shown great potential for application development. However, there are still deficiencies at present, and the device lifetime of optoelectronic devices needs to be further improved. Summary of the Invention

[0004] This application provides an optoelectronic device and a method for manufacturing the optoelectronic device to improve the device lifetime of the optoelectronic device.

[0005] The technical solution of this application is as follows:

[0006] In a first aspect, this application provides an optoelectronic device, which includes:

[0007] An anode and a cathode disposed opposite to each other;

[0008] A light-emitting layer disposed between the anode and the cathode; and

[0009] An electron function layer disposed between the cathode and the light-emitting layer;

[0010] Wherein, the electron function layer includes a first electron function sub-layer and a second electron function sub-layer. The material of the first electron function sub-layer contains a first metal oxide, and the material of the second electron function sub-layer contains nanoparticles with a core-shell structure. The material of the core of the nanoparticles contains a second metal oxide.

[0011] In a second aspect, this application provides a method for manufacturing an optoelectronic device for manufacturing any one of the optoelectronic devices in the first aspect, including the following steps:

[0012] Provide a bottom electrode, and form an electronic functional layer on one side of the bottom electrode; and

[0013] Form a top electrode on the side of the electronic functional layer away from the bottom electrode;

[0014] Wherein, when the optoelectronic device is a normal structure, the bottom electrode is the anode and the top electrode is the cathode, and the step of forming the electronic functional layer on one side of the bottom electrode includes: sequentially forming a first electronic functional sub-layer and a second electronic functional sub-layer on one side of the bottom electrode; or, when the optoelectronic device is an inverted structure, the bottom electrode is the cathode and the top electrode is the anode, and the step of forming the electronic functional layer on one side of the bottom electrode includes: sequentially forming a second electronic functional sub-layer and a first electronic functional sub-layer on one side of the bottom electrode.

[0015] This application provides an optoelectronic device and a preparation method thereof, and has the following technical effects:

[0016] In the optoelectronic device of this application, a second electronic functional sub-layer is introduced between the first electronic functional sub-layer and the cathode, effectively improving the problem of cathode oxidation, enhancing the performance stability of the optoelectronic device, and increasing the device life of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The following combines the drawings and describes the specific embodiments of this application in detail, and the technical solutions and other beneficial effects of this application will be obvious.

[0018] Figure 1 It is a schematic structural diagram of the first optoelectronic device provided by an embodiment of this application.

[0019] Figure 2 It is a schematic diagram of the principle that the core of the nanoparticles in the embodiment of this application does not directly contact the cathode.

[0020] Figure 3 It is a schematic structural diagram of the second optoelectronic device provided by an embodiment of this application.

[0021] The reference numerals are as follows:

[0022] 1: Optoelectronic device, 10: Substrate, 11: Anode, 12: Cathode, 13: Light-emitting layer, 14: Electronic functional layer, 15: Hole functional layer, 101: Core, 102: Shell, 103: First metal oxide, 104: First ligand, 141: First electronic functional sub-layer, 142: Second electronic functional sub-layer, 151: Hole injection layer, 152: Hole transport layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0023] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present application.

[0024] Unless otherwise defined, all professional and scientific terms used herein have the same meaning as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to the described content can be applied to the present invention. The preferred methods and materials described herein are for illustrative purposes only and do not limit the content of the present application.

[0025] It should be noted that the description order of the following embodiments does not limit the preferred order of the embodiments. The various embodiments of the present application may exist in a range form; it should be understood that the description in a range form is only for convenience and brevity and should not be construed as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the counted range, such as 1, 2, 3, 4, 5, and 6, which applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any recited number (fraction or integer) within the indicated range.

[0026] In the description of the present application, the term "comprising" means "including but not limited to".

[0027] The term "at least one" means one or more, and "multiple", "plural" means two or more. The term "at least one", "at least one of the following (items)" or similar expressions refer to any combination of these items, including any combination of single (item) or plural (items). For example, "at least one of (item) a, b, or c" or "at least one of (item) a, b, and c" can both be expressed as: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0028] The selection range of the term "and / or" includes any one of two or more related listed items, and also includes any and all combinations of the related listed items. The any and all combinations include combinations of any two related listed items, any more related listed items, or all related listed items. For example, "A and / or B" includes three parallel solutions: A, B, and A + B. Another example is the technical solution of "A, and / or, B, and / or, C, and / or, D", which includes any one of A, B, C, and D (i.e., the technical solutions connected by "logical or"), and also includes any and all combinations of A, B, C, and D, that is, combinations of any two or any three of A, B, C, and D, and also includes the four-item combination of A, B, C, and D (i.e., the technical solutions connected by "logical and").

[0029] In this application, descriptions such as "layer A is formed on one side of layer B" or "layer A is formed on the side of layer B away from layer C" can be expressed as layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or can be expressed as layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacer structure layers can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B" or "layer A is disposed on the side of layer B away from layer C" can be expressed as layer A is in direct contact with layer B, or can be expressed as other spacer structure layers are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can be expressed as layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and layer A is in direct contact with layer C.

[0030] The term "particle size" refers to the diameter of the nanoparticles.

[0031] The term "aliphatic hydrocarbon group" refers to an aliphatic straight-chain hydrocarbon group or an aliphatic branched-chain hydrocarbon group. For example, an "aliphatic hydrocarbon group having 1 to 30 carbon atoms" can be a straight-chain alkyl group having 1 to 30 carbon atoms, a straight-chain alkenyl group having 2 to 30 carbon atoms, a straight-chain alkynyl group having 2 to 30 carbon atoms, a branched-chain alkyl group having 3 to 30 carbon atoms, a branched-chain alkenyl group having 4 to 30 carbon atoms, or a branched-chain alkynyl group having 4 to 30 carbon atoms. The number of carbon atoms in the hydrocarbon group can be, for example, 1 to 3, 1 to 5, 1 to 8, 1 to 10, 1 to 20, 2 to 5, 2 to 10, 3 to 6, 3 to 10, 4 to 8, or 4 to 10, and examples are 1, 2, 5, 8, 10, 20, 30, or a value between any two of the foregoing values.

[0032] The term "aliphatic hydrocarbonoxy" refers to a group with the general formula *-O-hydrocarbyl*, where * represents the connection site and O represents an oxygen atom.

[0033] The term "aliphatic cycloalkyl" refers to a cyclic hydrocarbon group belonging to the aliphatic group. The number of carbon atoms in the "aliphatic cycloalkyl having 3 to 30 ring atoms" can be, for example, 3 to 5, 3 to 8, 3 to 10, 3 to 14, 3 to 20, or 5 to 10, and examples are 3, 5, 6, 8, 10, 14, 20, 24, 28, 30 or a value between any two of the foregoing values. Suitable examples include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or adamantyl.

[0034] The term "aliphatic heterocyclic hydrocarbon group" refers to a group in which at least one carbon atom in the aliphatic cyclic hydrocarbon group is replaced by a heteroatom selected from one or more of N, S, O, P, and Si, and the number of heteroatoms is selected from 1 to 20. The number of ring atoms in the "aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms" can be, for example, 3 to 5, 3 to 8, 3 to 10, 3 to 14, 3 to 20, or 5 to 10, and examples are 3, 5, 6, 8, 10, 14, 20, 24, 28, 30 or a value between any two of the foregoing values.

[0035] The term "aryl" refers to an aromatic hydrocarbon group derived by removing one hydrogen atom from an aromatic ring compound, which can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl. For the polycyclic rings, at least one is an aromatic ring system. The "aryl having 6 to 30 ring atoms" can be an aryl having 6 to 20 ring atoms, an aryl having 6 to 18 ring atoms, an aryl having 6 to 16 ring atoms, an aryl having 6 to 14 ring atoms, or an aryl having 6 to 10 ring atoms. The number of ring atoms can be, for example, 6, 10, 12, 14, 16, 18, 20, 24, 26, 28, 30 or a value between any two of the foregoing values. Suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthracenyl, phenanthryl, fluoranthenyl, triphenylenyl, pyrenyl, perylenyl, tetraphenylenyl, fluorenyl, dinaphthylphenyl, acenaphthylenyl, and their derivatives. It can be understood that multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically such as acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, diaryl ether systems should also be included in the definition of aryl.

[0036] The term "aryloxy" refers to a group with the general formula *-O-aryl*.

[0037] The term "heteroaryl" means that on the basis of aryl, at least one carbon atom is replaced by a heteroatom, and the heteroatom is selected from one or more of N, S, O, P, and Si, and the number of heteroatoms is selected from 1 to 20. "Heteroaryl having 5 to 30 ring atoms" can be heteroaryl having 5 to 20 ring atoms, heteroaryl having 5 to 18 ring atoms, heteroaryl having 5 to 16 ring atoms, heteroaryl having 5 to 14 ring atoms, heteroaryl having 5 to 12 ring atoms, or heteroaryl having 5 to 10 ring atoms. The number of ring atoms can be, for example, 5, 10, 12, 14, 18, 20, 24, 26, 28, 30, or a value between any two of the foregoing values. Suitable examples include, but are not limited to, thienyl, furyl, pyrrolyl, dioxazolyl, triazolyl, imidazolyl, pyridyl, bipyridyl, pyrimidinyl, triazinyl, acridinyl, pyridazinyl, pyrazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, benzothienyl, benzofuryl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienothienyl, furanopyrrolyl, furanofuryl, thienofuryl, benzisoxazolyl, benzisothiazolyl, benzimidazolyl, phthalazinyl, phenanthridinyl, peridinyl, quinazolinone, dibenzothienyl, dibenzofuryl, or carbazolyl.

[0038] The term "heteroaryloxy" means a group with the general formula *-O-heteroaryl. The applicant has found that existing optoelectronic devices have the problem of cathode oxidation, which will lead to a shortened device life of the optoelectronic device, thus having a negative impact on the performance stability of the optoelectronic device. Taking the optoelectronic device as a QLED as an example, the material of the electron transport layer is generally a metal oxide (such as ZnO), and the metal oxide has certain oxidizing properties. Therefore, when the electron transport layer is in direct contact with the cathode, the problem of cathode oxidation will occur. Especially when the material of the cathode is Ag, Ag is extremely easy to be oxidized to form AgO, resulting in a rapid decay of the performance of the QLED device.

[0039] Based on this, an embodiment of the present application provides an optoelectronic device, as Figures 1 to 3 shown, the optoelectronic device 1 includes an anode 11, a cathode 12, a light-emitting layer 13, and an electron functional layer 14. Among them, the anode 11 and the cathode 12 are disposed opposite to each other, the light-emitting layer 13 is disposed between the anode 11 and the cathode 12, and the electron functional layer 14 is disposed between the cathode 12 and the light-emitting layer 13. The electron functional layer 14 includes a first electron functional sub-layer 141 and a second electron functional sub-layer 142. The second electron functional sub-layer 142 is closer to the cathode 12 than the first electron functional sub-layer 141. The material of the first electron functional sub-layer 141 contains a first metal oxide 103, and the material of the second electron functional sub-layer 142 contains nanoparticles with a core-shell structure, and the material of the core of the nanoparticles is a second metal oxide.

[0040] In the optoelectronic device 1 according to the embodiment of the present application, a second electron functional sublayer 142 is introduced between the first electron functional sublayer 141 and the cathode 12, effectively preventing the direct contact between the first electron functional sublayer 141 and the cathode 12, effectively improving the problem of cathode 12 oxidation, enhancing the performance stability of the optoelectronic device 1, and increasing the device life of the optoelectronic device 1.

[0041] In the optoelectronic device 1 according to the embodiment of the present application, the first metal oxide 103 and the second metal oxide may be the same or different, and the first metal oxide 103 and the second metal oxide may be undoped or doped. In order to improve the electron injection level of the optoelectronic device 1, in some embodiments of the present application, the first metal oxide 103 and the second metal oxide are independently selected from one or more of oxides of zinc, oxides of titanium, oxides of tin, oxides of barium, oxides of tantalum, oxides of aluminum, oxides of zirconium, zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, zinc lithium oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide, and titanium lithium oxide, such as ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O, In (1-x) Sn x O and Ti (1-x) Li x O, where 0 < x ≤ 0.5.

[0042] In some embodiments of the present application, the first metal oxide 103 is nanoparticles, and the average particle size of the first metal oxide 103 is 2 nm to 20 nm, such as 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 15 nm, 20 nm, or a value between any two of the foregoing values.

[0043] To further improve the problem of the oxidation of the cathode 12 by the first metal oxide 103, in some embodiments of the present application, the material of the shell of the nanoparticles is an insulating compound. The material of the shell of the nanoparticles is, for example, selected from one or more of silicon oxides and silicon nitrides, and an example is silicon dioxide, which has a certain reducing property and further improves the problem of cathode oxidation. The material of the shell of the nanoparticles is preferably an insulating compound with stable chemical properties to avoid a decrease in the performance of the optoelectronic device due to an interfacial reaction between the second electron functional sublayer 142 and the cathode 12. The material of the shell of the nanoparticles cannot be a magnetic material.

[0044] To balance the improvement of the problem of cathode 12 oxidation and ensure a good electron injection level of the optoelectronic device 1, in some embodiments of the present application, as Figure 2 shown, the shell 102 of the nanoparticles partially coats the core 101 of the nanoparticles. The average coating rate of the shell 102 of the nanoparticles on the core 101 of the nanoparticles is, for example, 30% to 70%, and examples are 30%, 40%, 50%, 60%, 70% or a value between any two of the foregoing values; and / or, the mass of the shell 102 of the nanoparticles accounts for 5% to 15% of the total mass of the nanoparticles, and for example, it can be 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15% or a value between any two of the foregoing values; and / or, the average particle size of the nanoparticles is 3 nm to 10 nm, and for example, it can be 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm or a value between any two of the foregoing values.

[0045] To further improve the problem of the oxidation of the cathode 12, in some embodiments of the present application, continue to refer to Figure 2 , for the core 101 of the nanoparticles, compared with the uncoated part of the core of the nanoparticles by the shell 102, the coated part of the shell 102 of the nanoparticles is closer to the cathode 12, so that the core 101 of the nanoparticles and the cathode 12 are isolated by the shell 102 of the nanoparticles, so that the core of the nanoparticles and the cathode 12 are not in direct contact, and the oxidation of the cathode 12 by the second metal oxide can be avoided.

[0046] To improve the stability of the nanoparticles, in some embodiments of the present application, the oxygen atoms in the second metal oxide are connected to the insulating compound by covalent bonds.

[0047] To further balance the improvement of the electron injection level of the electron functional layer 14 and the reduction of the oxidizing property of the electron functional layer on the cathode, in some embodiments of the present application, the nanoparticles in the second electron functional sublayer 142 are arranged in a single layer, which will not have a negative impact on the electron conduction process of the optoelectronic device.

[0048] To further improve the solution processability of the first metal oxide 103 and / or the nanoparticles, in some embodiments of the present application, a portion of the core of the nanoparticles that is not coated with the shell of the nanoparticles is connected to a first ligand 104, and / or the surface of the shell of the nanoparticles is connected to a second ligand, and / or the surface of the first metal oxide 103 is connected to a third ligand.

[0049] Among them, the first ligand 104 to the third ligand are each independently selected from a hydroxyl group, a carboxyl group, a mercapto group, an aldehyde group, -NR1R2, -O-R7, -X, -NO2, and one or more of the ligands having the general formula L1-L2, X is a halogen atom, and L2 is a coordination group;

[0050] Each occurrence of L1 is independently selected from an unsubstituted or at least one first group-substituted aliphatic hydrocarbon group having 1 to 30 carbon atoms, an unsubstituted or at least one first group-substituted aliphatic hydrocarbon oxy group having 1 to 30 carbon atoms, an unsubstituted or at least one first group-substituted aliphatic cycloalkane group having 3 to 30 ring atoms, an unsubstituted or at least one first group-substituted aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, an unsubstituted or at least one first group-substituted aryl group having 6 to 30 ring atoms, an unsubstituted or at least one first group-substituted aryloxy group having 6 to 30 ring atoms, an unsubstituted or at least one first group-substituted heteroaryl group having 5 to 30 ring atoms, or an unsubstituted or at least one first group-substituted heteroaryloxy group having 5 to 30 ring atoms, or a combination of these groups. Each occurrence of the first group is independently selected from a hydroxyl group, a carboxyl group, a mercapto group, an aldehyde group, -NR1R2, -O-R7, -X, -NO2, or a combination of these groups; each occurrence of R1 to R7 is independently selected from an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aliphatic hydrocarbon oxy group having 1 to 10 carbon atoms, an aliphatic cycloalkane group having 3 to 10 ring atoms, an aliphatic heterocyclic hydrocarbon group having 3 to 10 ring atoms, an aryl group having 6 to 14 ring atoms, an aryloxy group having 6 to 14 ring atoms, a heteroaryl group having 5 to 14 ring atoms, or a heteroaryloxy group having 5 to 14 ring atoms, or a combination of these groups. Each occurrence of L2 is independently selected from a hydroxyl group, a carboxyl group, a mercapto group, an aldehyde group, -NR1R2, -O-R7, -X, -NO2, or a combination of these groups.

[0051] In some embodiments of the present application, to further improve the problem of oxidation of the cathode 12, the first ligand 104 includes a coordination end and a free end. The coordination end of the first ligand 104 is connected to the part of the core of the nanoparticle that is not coated by the shell of the nanoparticle, and the free end of the first ligand 104 has a first electrical property; the third ligand includes a coordination end and a free end. The coordination end of the third ligand is connected to the surface of the first metal oxide 103, and the free end of the third ligand has a second electrical property; one of the first electrical property and the second electrical property is a positive electrical property, and the other is a negative electrical property, so that the first metal oxide 103 and the part of the core of the nanoparticle that is not coated by the shell attract each other through Coulomb interaction, reducing the risk of direct contact between the part of the core of the nanoparticle that is not coated by the shell and the cathode 12.

[0052] In some embodiments of the present application, the first ligand 104 is selected from an electron-withdrawing group or a ligand with the general formula L1-L2, and the third ligand is selected from an electron-donating group or a ligand with the general formula L1-L2. Each occurrence of L1 is independently selected from an aliphatic chain alkyl having 1 to 30 carbon atoms substituted by at least one first group. In the first ligand 104, each occurrence of the first group is independently selected from an electron-withdrawing group, and in the second ligand, each occurrence of the first group is independently selected from an electron-donating group; alternatively, the first ligand 104 is selected from an electron-donating group or a ligand with the general formula L1-L2, and the third ligand is selected from an electron-withdrawing group or a ligand with the general formula L1-L2. Each occurrence of L1 is independently selected from an aliphatic chain alkyl having 1 to 30 carbon atoms substituted by at least one first group. In the first ligand 104, each occurrence of the first group is independently selected from an electron-donating group, and in the third ligand, each occurrence of the first group is independently selected from an electron-withdrawing group.

[0053] In some embodiments of the present application, the first ligand 104 is selected from a carboxyl group, -NO2, an aldehyde group, or a ligand with the general formula L1-L2, and the third ligand is selected from a hydroxyl group, -OCH3, or a ligand with the general formula L1-L2. And in the first ligand 104, each occurrence of the first group is independently selected from a carboxyl group, -NO2, or an aldehyde group, L2 is selected from a carboxyl group, -NO2, or an aldehyde group, and in the third ligand, each occurrence of the first group is independently selected from a hydroxyl group or -OCH3, L2 is selected from a hydroxyl group or -OCH3; alternatively, the first ligand 104 is selected from a hydroxyl group, -OCH3, or a ligand with the general formula L1-L2, and the third ligand is selected from a carboxyl group, -NO2, an aldehyde group, or a ligand with the general formula L1-L2. And in the first ligand 104, each occurrence of the first group is independently selected from a hydroxyl group or -OCH3, L2 is selected from a hydroxyl group or -OCH3, and in the third ligand, each occurrence of the first group is independently selected from a carboxyl group, -NO2, or an aldehyde group, L2 is selected from a carboxyl group, -NO2, or an aldehyde group.

[0054] In order to further improve the binding tightness between the first electronic functional sublayer and the second electronic functional sublayer, and further reduce the risk of the uncoated part of the core of the nanoparticles coming into direct contact with the cathode 12, in some embodiments of the present application, the uncoated part of the core of the nanoparticles is connected to the first metal oxide 103 through the first ligand 104 and / or the third ligand, that is, at least one of the first ligand 104 and the third ligand has two or more ligand groups. When the first ligand 104 or the third ligand has two or more coordination groups, the coordination groups can be the same or different from each other, and at least one coordination group can be coordinately connected to the surface of the first metal oxide 103, and at least one coordination group can be coordinately connected to the uncoated part of the core of the nanoparticles.

[0055] Among them, the first ligand 104 and / or the third ligand are, for example, selected from one or more of aliphatic polyol compounds having 3 to 30 carbon atoms, aliphatic polycarboxylic acid compounds having 3 to 30 carbon atoms, aliphatic polythiol compounds having 3 to 30 carbon atoms, aliphatic polyaldehyde compounds having 3 to 30 carbon atoms, aliphatic polyaldehyde compounds having 3 to 30 carbon atoms, and aliphatic polyamine compounds having 3 to 30 carbon atoms. Among them, the number of carbon atoms of the aliphatic polyol compounds can be, for example, 3, 6, 7, 8, 9, 10, 12, 14, 16, 18, 20, 24, 30 or a value between any two of the foregoing values. The aliphatic polyol compounds include, but are not limited to, one or more of 1,6-hexanediol, 1,7-heptanediol, 1,8-octanediol, 1,9-nonanediol, 1,4,8-octanetriol, and 1,10-decanediol; and / or, the number of carbon atoms of the aliphatic polycarboxylic acid compounds can be, for example, 3, 6, 7, 8, 9, 10, 12, 14, 16, 18, 20, 24, 30 or a value between any two of the foregoing values. The aliphatic polycarboxylic acid compounds include, but are not limited to, one or more of adipic acid, pimelic acid, suberic acid, azelaic acid, and sebacic acid; and / or, the number of carbon atoms of the aliphatic polythiol compounds can be, for example, 3, 6, 7, 8, 9, 10, 12, 14, 16, 18, 20, 24, 30 or a value between any two of the foregoing values. The aliphatic polythiol compounds include, but are not limited to, one or more of 1,6-hexanedithiol, 1,8-octanedithiol, 1,9-nonanedithiol, and 1,10-decanedithiol; and / or, the number of carbon atoms of the aliphatic polyaldehyde compounds can be, for example, 3, 6, 7, 8, 9, 10, 12, 14, 16, 18, 20, 24, 30 or a value between any two of the foregoing values. The aliphatic polyaldehyde compounds include, but are not limited to, one or more of 1,6-hexanedial, 1,8-octanedial, and 1,5-pentanedial; and / or, the number of carbon atoms of the aliphatic polyamine compounds can be, for example, 3, 6, 7, 8, 9, 10, 12, 14, 16, 18, 20, 24, 30 or a value between any two of the foregoing values. The aliphatic polyamine compounds include, but are not limited to, one or more of hexamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, and decamethylenediamine.

[0056] In order to further improve the problem of oxidation of the cathode 12, in some embodiments of the present application, a second ligand is connected to the surface of the shell of the nanoparticle. The second ligand includes a coordination end and a free end. The coordination end of the second ligand is connected to the surface of the shell of the nanoparticle. The free end of the third ligand is electrically neutral or has a third electric property, and the third electric property is the same as the second electric property, so as to prevent the uncoated part of the core of the nanoparticle from directly contacting the cathode 12. The second ligand is, for example, selected from ligands having the general formula L1-L2. L1 is selected from aliphatic hydrocarbon groups having 5 to 30 carbon atoms, which can increase the distance between the nanoparticle and the cathode 12. As an example, the second ligand is selected from one or more of n-octylamine, n-nonane, n-decylamine, dodecylamine, tetradecylamine, hexadecylamine, octadecylamine, oleylamine, and eicosylamine. It should be noted that the third ligand may only contain one coordination group, and the coordination group refers to the description above, so that the third ligand can only be connected to the surface of the shell of the nanoparticle and cannot form a coordination connection with the first metal oxide 103.

[0057] In order to balance the improvement of the comprehensive performance of the optoelectronic device 1 and the reduction of the manufacturing cost, in some embodiments of the present application, the thickness of the electron functional layer 14 is 10 nm to 60 nm, and examples are 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, and values between any two of the foregoing values.

[0058] In some embodiments of the present application, the materials of the anode 11 and the cathode 12 are independently selected from one or more of metals, carbon materials, and third metal oxides. Among them, the metals include, but are not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg. The carbon materials include, but are not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The third metal oxides include, but are not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), SnO2, ZnO, and In2O3. The anode 11 or the cathode 12 can also be a composite electrode. The composite electrode has a structure similar to a "sandwich". The materials of the upper layer and the bottom layer are respectively doped or undoped transparent metal oxides, and the material of the middle layer is a metal. For example, it can be one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thickness of the middle layer does not exceed 35 nm. The thickness of the anode 11 can be, for example, 20 nm to 300 nm, and the thickness of the cathode 12 can be, for example, 20 nm to 300 nm.

[0059] In some embodiments of the present application, the optoelectronic device 1 is a light-emitting device. The optoelectronic device 1 further includes a light-emitting layer 13 disposed between the anode 11 and the electron functional layer 14. The light-emitting layer 13 is a single-layer structure or a multi-layer structure. The light-emitting layer 13 can be, for example, two or more layers. The thickness of the light-emitting layer 13 can be, for example, 10 nm to 100 nm. In some embodiments of the present application, the material of the light-emitting layer 13 includes one or more of organic light-emitting materials and light-emitting quantum dots.

[0060] Among them, the organic light-emitting materials include, but are not limited to, one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III), 4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, thermally activated delayed materials, polymers containing B-N covalent bonds, hybrid local charge transfer excited state materials, and exciplex luminescent materials.

[0061] The emission colors of the luminescent quantum dots include, but are not limited to, red, green, or blue, and the luminescent quantum dots include, but are not limited to, one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The shell layer of the core-shell structure quantum dots is one or more layers. The average particle size of the luminescent quantum dots can be, for example, 2 nm to 20 nm, exemplified by 2 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 15 nm, 20 nm, or a value between any two of the foregoing values.

[0062] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell quantum dots, or the material of the shell of the core-shell quantum dots includes, but is not limited to, at least one of II-VI group compounds, III-V group compounds, III-VI group compounds, IV-VI group compounds, or I-III-VI group compounds. Among them, II-VI group compounds include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. III-VI group compounds include, but are not limited to, one or more of In2S3, In2Se3, InGaS3, and InGaSe3. III-V group compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. IV-VI group compounds include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. I-III-VI group compounds include, but are not limited to, one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.

[0063] For inorganic perovskite quantum dots, the general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0064] For organic perovskite quantum dots, the general structural formula of the organic perovskite quantum dots is CMX3, where C is formamidinium, M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I-.

[0065] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge2+ , Yb 2+ or Eu 2+ , where X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0066] It can be understood that when the material of the light-emitting layer 13 contains light-emitting quantum dots, the material of the light-emitting layer 13 further includes a fourth ligand connected to the surface of the light-emitting quantum dots. The fourth ligand includes but is not limited to hydroxyl, amino, mercapto, carboxyl, C1-C 30 fatty carboxylic acid ligands, C6-C 30 aromatic carboxylic acid ligands, C1-C 30 fatty mercaptan ligands, C6-C 30 mercaptan aromatic ligands, C1-C 30 fatty amine ligands, C6-C 30 aromatic amine ligands, C1-C 30 fatty phosphine ligands, C6-C 30 aromatic phosphine ligands, C6-C 30 aromatic phosphate ligands, and one or more of halogen ligands.

[0067] Among them, the C1-C 30 fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; the C6-C 30 aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid, and 1-naphthoic acid. The C1-C 30 fatty mercaptan ligands include but are not limited to one or more of hexanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol, dodecanethiol, hexadecanethiol, and octadecanethiol. The C6-C 30 mercaptan aromatic ligands include but are not limited to one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. The C1-C 30 fatty amine ligands include but are not limited to one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, octadecylamine, and oleylamine. The C6-C 30 aromatic amine ligands include but are not limited to one or more of aniline, indanpropylamine, 4-octylaniline, and benzidine. The C1-C 30The fatty phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6-C 30 The aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, C6-C 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. The halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0068] In order to further improve the optoelectronic performance and device lifetime of the optoelectronic device 1, in some embodiments of the present application, continue to refer to Figure 1 , the optoelectronic device 1 further includes a hole functional layer 15, and the hole functional layer 15 is disposed between the anode 11 and the electron functional layer 14. When the optoelectronic device 1 includes a light-emitting layer 13, the hole functional layer 15 is disposed between the anode 11 and the light-emitting layer 13.

[0069] The hole functional layer 15 may be a single-layer structure or a multi-layer structure, and the thickness of the hole functional layer 15 is, for example, 10 nm to 100 nm. When the hole functional layer 15 is a multi-layer structure, the hole functional layer 15 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 15 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 11 than the electron blocking layer; for the hole functional layer 15 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode 11 than the electron blocking layer; for the hole functional layer 15 including a hole injection layer and a hole transport layer, the hole injection layer is closer to the anode 11 than the hole transport layer.

[0070] The materials of the hole functional layer 15 include, but are not limited to, one or more of organic compounds, a first inorganic compound material, and a second inorganic compound material. Among them, the organic compounds include, but are not limited to, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (abbreviation: PEDOT:PSS, CAS number: 155090-83-8), copper phthalocyanine (CAS number: 147-14-8), titanium oxyphthalocyanine (CAS number: 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (CAS number: 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS number: 105598-27-4), polyaniline (CAS number: 25233-30-1), polypyrrole (CAS number: 30604-81-0), 3-hexyl-substituted polythiophene (CAS number: 104934-50-1), poly(9-vinylcarbazole) (abbreviation: PVK, CAS number: 25067-59-8), 4,4'-bis(9-carbazolyl)biphenyl (abbreviation: CBP, CAS number: 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviation: TAPC, CAS number: 58473-78-2), poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviation: TFB, CAS number: 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorenyl-2,7-diyl)] (CAS number: 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS number: 124729-98-2), 4,4',4”-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA, CAS number: 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS number: 185690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: NPB, CAS number: 123847-85-8), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: TPD, CAS number: 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS number: 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviation: Spiro-TPD,One or more of those with CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (abbreviated as PTTA, CAS No. 1333317-99-9), and 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (abbreviated as Spiro-omeTAD, CAS No. 207739-72-8); and / or, the first inorganic compound material includes but is not limited to one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide; and / or, the second inorganic compound material includes one or more doped second inorganic compounds, and the host material of the doped second inorganic compound is selected from graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), p-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2), or tungsten sulfide (such as WS2), and the doping element of the doped second inorganic compound is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements, and the proportion of the molar amount of the doping element in the total molar amount of the doped second inorganic compound does not exceed 50%.

[0071] It can be understood that when the hole functional layer 15 contains multiple materials and the hole functional layer 15 is a multi-layer structure, the multiple materials may all be in the same layer, or in different layers respectively, or part of them in the same layer. For example, as Figure 1 shown, when the hole functional layer 15 is composed of a hole injection layer 151 and a hole transport layer 152 arranged in a stacked manner, the materials of the hole functional layer 15 include PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers respectively, the material of the hole injection layer 151 is PEDOT:PSS, and the material of the hole transport layer 152 is TFB.

[0072] The embodiment of the present application also provides a preparation method of an optoelectronic device, which can be used to prepare any one of the optoelectronic devices described above. The preparation method of the optoelectronic device includes the following steps:

[0073] S1. Provide a bottom electrode and form an electron functional layer on one side of the bottom electrode;

[0074] S2. Form a top electrode on the side of the electron functional layer away from the bottom electrode.

[0075] Wherein, when the optoelectronic device has a normal structure, the bottom electrode is the anode and the top electrode is the cathode. The step of forming the electron functional layer on one side of the bottom electrode includes: sequentially forming a first electron functional sub-layer and a second electron functional sub-layer on one side of the bottom electrode; or, when the optoelectronic device has an inverted structure, the bottom electrode is the cathode and the top electrode is the anode. The step of forming the electron functional layer on one side of the bottom electrode includes: sequentially forming a second electron functional sub-layer and a first electron functional sub-layer on one side of the bottom electrode. The structural compositions of the anode, cathode, first electron functional sub-layer, and second electron functional sub-layer all refer to the previous description, and the nanoparticles and the first ligand also both refer to the previous description. The first ligand connected to the uncoated part of the core of the nanoparticles, the second ligand connected to the surface of the shell, and the third ligand connected to the surface of the first ligand all refer to the previous description.

[0076] It can be understood that if the original ligand of the first quantum dot is not the third ligand, it can be replaced with the third ligand by ligand exchange. The ligand exchange can be carried out in a solution environment or in a state where the first ligand forms a solid film. For example: first, prepare a solid film of the first ligand by solution method, then apply a high-concentration solution of the third ligand (the concentration is, for example, 60 mg / mL to 300 mg / mL) on one side of the solid film, that is, use the concentration difference to drive ligand exchange, and then wash away the excess third ligand solution and the replaced original ligand, and then dry it. Similarly, if the first ligand and / or the second ligand are not the original ligands of the nanoparticles, they can also be replaced with the target ligands by ligand exchange.

[0077] In some embodiments of the present application, when the optoelectronic device has a normal structure, the step of sequentially forming a first electron functional sub-layer and a second electron functional sub-layer on one side of the bottom electrode includes: forming a cured film including the first ligand on one side of the bottom electrode to obtain the first electron functional sub-layer, then depositing a second dispersion liquid containing nanoparticles on the side of the first electron functional sub-layer away from the bottom electrode, and then drying the deposited second dispersion liquid to obtain the second electron functional sub-layer; or, when the optoelectronic device has an inverted structure, the step of sequentially forming a second electron functional sub-layer and a first electron functional sub-layer on one side of the bottom electrode includes: forming a cured film including the nanoparticles on one side of the bottom electrode to obtain the second electron functional sub-layer, then depositing a first dispersion liquid including the first ligand on the side of the second electron functional sub-layer away from the bottom electrode, and then drying the deposited first dispersion liquid to obtain the first electron functional sub-layer. The drying treatment includes but is not limited to one or more of heat treatment and vacuum drying treatment.

[0078] Among them, the dispersion media of the first dispersion liquid and the second dispersion liquid include, but are not limited to, one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds, and amide compounds. Among them, alkanes include, but are not limited to, one or more of nonane, decane, dodecane, terpane, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane, and cyclopentane. Aromatic hydrocarbons include, but are not limited to, one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-cumene, butylbenzene, and 1-methylnaphthalene or indene. Halogenated alkanes include, but are not limited to, one or more of dichloromethane, chloroform, and carbon tetrachloride. Alcohol compounds include, but are not limited to, one or more of methanol, ethanol, propanol, butanol, ethylene glycol, and glycerol. Ether compounds include, but are not limited to, ethylene glycol monomethyl ether. Furan compounds include, but are not limited to, tetrahydrofuran. Pyridine compounds include, but are not limited to, pyridine. Amide compounds include, but are not limited to, N,N-dimethylformamide. The dispersion media of the first dispersion liquid and the second dispersion liquid are exemplified by ethanol or n-hexanol. The concentration of the first ligand in the first dispersion liquid is, for example, 5 mg / mL to 50 mg / mL, and the concentration of the nanoparticles in the second dispersion liquid is, for example, 5 mg / mL to 50 mg / mL.

[0079] The deposition methods of the first dispersion liquid and the second dispersion liquid include, but are not limited to, one or more of spin coating, printing, inkjet printing, doctor blading, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, bar coating, and solution electrodeposition.

[0080] Further, in some embodiments of the present application, when the optoelectronic device is of a normal structure, after the step of depositing the second dispersion liquid containing nanoparticles and before the step of drying the deposited second dispersion liquid, a preset time is set aside to ensure that a sufficient number of the first ligands are connected to or close to the uncoated part of the core of the nanoparticles. The standing time can be, for example, 5 min to 30 min. Further, when the first ligand can be connected to the uncoated part of the core of the nanoparticles, after the step of depositing the second dispersion liquid and before the step of drying the deposited second dispersion liquid, the method for preparing the optoelectronic device further includes: cleaning the film layer formed by depositing the second dispersion liquid with a solvent to remove the nanoparticles not connected to the first ligand. Optionally, the solvent is selected from alkanes having 5 to 15 carbon atoms or aliphatic alcohol compounds having 5 to 15 carbon atoms.

[0081] In some embodiments of the present application, when the optoelectronic device has a normal structure, before the step of forming the electron functional layer, the manufacturing method of the optoelectronic device further includes the step of forming a light-emitting layer on one side of the bottom electrode, and the electron functional layer is formed on the side of the light-emitting layer away from the bottom electrode; or, when the optoelectronic device has an inverted structure, after the step of forming the electron functional layer and before the step of forming the top electrode, the manufacturing method of the optoelectronic device further includes the step of forming a light-emitting layer on the side of the electron functional layer away from the bottom electrode, and the top electrode is formed on the side of the light-emitting layer away from the bottom electrode. The structural composition of the light-emitting layer refers to the description above.

[0082] In some embodiments of the present application, when the optoelectronic device has a normal structure, before the step of forming the electron functional layer, the manufacturing method of the optoelectronic device further includes the step of forming a hole functional layer on one side of the bottom electrode, and the electron functional layer is formed on the side of the hole functional layer away from the bottom electrode; or, when the optoelectronic device has an inverted structure, after the step of forming the electron functional layer and before the step of forming the top electrode, the manufacturing method of the optoelectronic device further includes the step of forming a hole functional layer on the side of the electron functional layer away from the bottom electrode, and the top electrode is formed on the side of the hole functional layer away from the bottom electrode. The structural composition of the hole functional layer refers to the description above.

[0083] As an example, when the optoelectronic device has a normal structure, the manufacturing method of the optoelectronic device includes the steps of sequentially forming a hole functional layer, a light-emitting layer, an electron functional layer, and a top electrode on one side of the bottom electrode; or, when the optoelectronic device has an inverted structure, the manufacturing method of the optoelectronic device includes the steps of sequentially forming an electron functional layer, a light-emitting layer, a hole functional layer, and a top electrode on one side of the bottom electrode.

[0084] It should be noted that, except for the electron functional layer, the manufacturing methods of other functional film layers in the optoelectronic device include but are not limited to chemical methods and / or physical methods. Among them, chemical methods include but are not limited to one or more of chemical vapor deposition, sequential ionic layer adsorption and reaction, anodic oxidation, electrolytic deposition, and coprecipitation. Physical methods include but are not limited to physical coating methods and solution methods. Physical coating methods include but are not limited to one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include but are not limited to one or more of spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion, spraying, roll coating, casting, slot die coating, and bar coating. When forming a functional film layer by solution method, a drying treatment process can be added to form a cured film layer.

[0085] After each functional film layer of the optoelectronic device is prepared, a packaging process is required. The packaging process can be carried out by using common machine packaging or manual packaging. In the packaging environment, the oxygen content and water content are both lower than 0.1 ppm to ensure the stability of the optoelectronic device.

[0086] The embodiment of the present application also provides an electronic device, which includes any one of the optoelectronic devices described above, or an optoelectronic device prepared by the preparation method of any one of the optoelectronic devices described above. The electronic device can be, for example, any electronic product with a display function, including but not limited to smartphones, tablet personal computers, mobile phones, video telephones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, vehicle navigation devices, electronic billboards, automated teller machines, smart bracelets, smart watches, Virtual Reality (VR) devices or wearable devices.

[0087] The technical solutions and technical effects of the present application will be described in detail below through specific examples, comparative examples and experimental examples. The following examples are only partial examples of the present application and do not specifically limit the present application.

[0088] Example 1

[0089] This embodiment provides an optoelectronic device and a preparation method thereof. The optoelectronic device is a quantum dot light-emitting diode with a normal structure. As Figure 3 shown, in the direction from bottom to top, the optoelectronic device 1 includes a substrate 10, an anode 11, a hole functional layer 15, a light-emitting layer 13, an electron functional layer 14, and a cathode 12 that are sequentially stacked. The hole functional layer 15 is composed of a hole injection layer 151 and a hole transport layer 152 that are stacked. The hole injection layer 151 is closer to the anode 11 than the hole transport layer 152. The electron functional layer is composed of a first electron functional sub-layer 141 and a second electron functional sub-layer 142 that are stacked. The second electron functional sub-layer 142 is closer to the cathode 12 than the first electron functional sub-layer 141.

[0090] The materials and thicknesses of each layer in the optoelectronic device 1 are as follows:

[0091] The material of the substrate 10 is glass, and the average thickness of the substrate 10 is 2 mm;

[0092] The material of the anode 11 is ITO, and the average thickness of the anode 11 is 50 nm;

[0093] The material of the cathode 12 is Ag, and the average thickness of the cathode 12 is 100 nm;

[0094] The material of the light-emitting layer 13 is CdS quantum dots, the emission color is blue, the average particle size of the quantum dots is 8 nm, and the average thickness of the light-emitting layer 13 is 40 nm;

[0095] The material of the first electron-functional sub-layer 141 is nano-ZnO (average particle size is 4 nm), and the average thickness of the first electron-functional sub-layer 141 is 40 nm;

[0096] The material of the second electron-functional sub-layer 142 is nano-particles ZnO / SiO2 with a core-shell structure (average particle size is 4 nm). Among them, the material of the core of the nano-particles is ZnO, the material of the shell of the nano-particles is SiO2, the shell of the nano-particles partially coats the core of the nano-particles, there is no direct contact between the core of the nano-particles and the cathode 12, the uncoated part of the core of the nano-particles is connected to the nano-ZnO in the first electron-functional sub-layer 141 through a first ligand (1,3-propanediol), the surface of the shell of the nano-particles is connected with a second ligand (oleylamine, and oleylamine is connected to the surface of the shell through an amino group), the core of the nano-particles is isolated from the cathode 12 through the shell of the nano-particles, and the nano-particles ZnO / SiO2 in the second electron-functional sub-layer 142 are arranged in a single layer;

[0097] The material of the hole injection layer 151 is PEDOT:PSS, and the thickness of the hole injection layer 151 is 40 nm;

[0098] The material of the hole transport layer 152 is TFB, and the thickness of the hole transport layer 152 is 30 nm.

[0099] Among them, the preparation method of the nano-ZnO in the first electron-functional sub-layer 141 includes the steps:

[0100] S10. Mix 5.5 g of zinc acetate dihydrate and 150 mL of ethanol, and stir at 80 °C until the zinc acetate dihydrate is completely dissolved to obtain a mixture;

[0101] S20. Place the mixture under a water bath condition of 0 °C, slowly add 20 mL of a potassium hydroxide aqueous solution with a concentration of 1.75 mol / L to the mixture, and stir until it is clear to obtain a uniformly transparent solution;

[0102] S30. Add heptane to the solution obtained in step S20 to form a precipitate. The volume ratio of the solution to heptane is 3:1. Then, centrifuge and collect the precipitate. Redissolve the precipitate in methanol, add heptane again, centrifuge, and collect the precipitate. Repeat this process twice. The finally collected precipitate is nano-ZnO. Dissolve the nano-ZnO in ethanol to obtain a nano-ZnO-ethanol solution with a concentration of 30 mg / mL for standby.

[0103] The preparation method of nano-particles ZnO / SiO2 comprises the following steps:

[0104] S100. Mix 400 μL of silane coupling agent solution with 2 mL of deionized water to obtain a mixed solution. Herein, the solute of the silane coupling agent solution is APTES (CAS No. 919-30-2), the solvent of the silane coupling agent solution is isopropanol, and the concentration of APTES in the silane coupling agent solution is 0.4 mol / L. Then, add the obtained mixed solution dropwise to the solution obtained in step S20 to obtain a first mixed system. Next, centrifuge the first mixed system at 6000 r / min for 2 min, collect the precipitate, wash the collected precipitate with ethanol several times, and finally disperse it in deionized water to obtain an aqueous solution of ZnO nanoparticles completely coated with SiO2.

[0105] S200. Take 50 mL of chlorobenzene as the oil-phase solution and place it in a 200 mL beaker. Then, slowly add 20 mL of the aqueous solution of ZnO nanoparticles completely coated with SiO2 to the chlorobenzene to form an aqueous-oil phase interface, and let it stand for 2 h. After a stable interface is formed, add 1 mL of 95% (volume percentage) ethanol aqueous solution to the aqueous phase to precipitate and float a small amount of ZnO nanoparticles completely coated with SiO2 at the chlorobenzene liquid surface to obtain a second mixed system.

[0106] S300. Add 5 mL of oleylamine to the oil phase of the second mixed system and react for 10 min to bind it to the lower half of the ZnO nanoparticles completely coated with SiO2 located at the interface to obtain a third mixed system.

[0107] S400. Add 4 mL of hydrogen peroxide and 1 mL of hydrofluoric acid to the aqueous phase of the third mixed system and react for 30 min to etch and remove the SiO2 on the upper half of the ZnO nanoparticles completely coated with SiO2 located at the interface in the aqueous phase. Then, inject 1,3-propanediol (the volume of 1,3-propanediol is 2% of the volume of the aqueous phase) into the aqueous phase and let it stand for 30 min.

[0108] S500. Remove the aqueous phase, then add 10 mL of n-hexane to the oil phase, perform solid-liquid separation to obtain a precipitate, and the precipitate is nano-particles ZnO / SiO2. Disperse the nano-particles ZnO / SiO2 in ethanol to obtain a nano-particle solution for standby.

[0109] In this embodiment, the preparation method of the optoelectronic device includes the following steps:

[0110] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove visible impurities on the surface, and then ultrasonically clean the substrate including ITO in deionized water for 15 min, in acetone for 15 min, in ethanol for 15 min, and in isopropanol for 15 min in sequence. After drying, perform ultraviolet-ozone surface treatment for 20 min to obtain a substrate including an anode;

[0111] S1.2. Under the air environment of normal temperature and pressure, spin-coat an aqueous solution of PEDOT:PSS with a mass fraction of 2.8% on the side of the anode away from the substrate, and then place it in a constant temperature heat treatment at 150 °C to cure into a film to obtain a hole injection layer;

[0112] S1.3. Under the nitrogen environment of normal temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 8 mg / mL on the side of the hole injection layer away from the anode, and then place it in a constant temperature heat treatment at 150 °C to cure into a film to obtain a hole transport layer;

[0113] S1.4. Under the nitrogen environment of normal temperature and pressure, spin-coat a CdS quantum dot-octane solution with a concentration of 20 mg / mL on the side of the hole transport layer away from the hole injection layer, and then place it in a constant temperature heat treatment at 80 °C to cure into a film to obtain a light-emitting layer;

[0114] S1.5. Under the nitrogen environment of normal temperature and pressure, spin-coat a nano-ZnO-ethanol solution with a concentration of 30 mg / mL on the side of the light-emitting layer away from the hole transport layer, and then place it in a constant temperature heat treatment at 80 °C to cure into a film to obtain a first electron functional sub-layer;

[0115] S1.6. Under the nitrogen environment of normal temperature and pressure, spin-coat a nanoparticle solution with a concentration of 5 mg / mL on the side of the first electron functional sub-layer away from the light-emitting layer so that the nanoparticle solution completely covers the side of the first electron functional sub-layer away from the light-emitting layer, let it stand for 15 min, and then wash the side of the first electron functional sub-layer away from the light-emitting layer with ethanol to remove the nanoparticles not connected to the nano-ZnO in the first electron functional sub-layer, and then perform drying treatment to obtain a second electron functional sub-layer;

[0116] S1.7. Place the stacked structure completed in step S1.6 in an evaporation chamber with a vacuum degree not higher than 3×10 -4 Pa, thermally evaporate Ag on the side of the electron functional layer away from the light-emitting layer through a mask plate to obtain a cathode, and then encapsulate to obtain an optoelectronic device.

[0117] Example 2

[0118] This embodiment provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that: the material of the first electron functional sub-layer is replaced by "nano-Zn 0.95 Mg 0.05 O". Among them, compared with the preparation method of nano-ZnO in Embodiment 1, the difference of the preparation method of nano-Zn 0.95 Mg 0.05 O is that: step S10 is replaced by "Mix 5.5 g of zinc acetate dihydrate, 0.14 g of magnesium acetate tetrahydrate and 150 mL of ethanol, and stir at 80 °C to completely dissolve zinc acetate dihydrate to obtain a mixture".

[0119] The preparation method of the optoelectronic device in this embodiment is carried out with reference to the preparation method of the optoelectronic device in Embodiment 1.

[0120] Embodiment 3

[0121] This embodiment provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that: the material of the first electron functional sub-layer is replaced by "nano-Zn 0.9 Mg 0.1 O". Among them, compared with the preparation method of nano-ZnO in Embodiment 1, the difference of the preparation method of nano-Zn 0.9 Mg 0.1 O is that: step S10 is replaced by "Mix 5.5 g of zinc acetate dihydrate, 0.29 g of magnesium acetate tetrahydrate and 150 mL of ethanol, and stir at 80 °C to completely dissolve zinc acetate dihydrate to obtain a mixture".

[0122] The preparation method of the optoelectronic device in this embodiment is carried out with reference to the preparation method of the optoelectronic device in Embodiment 1.

[0123] Embodiment 4

[0124] This embodiment provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is only that: the material of the first electron functional sub-layer is replaced by "nano-Zn 0.85 Mg 0.15 O". Among them, compared with the preparation method of nano-ZnO in Embodiment 1, the difference of the preparation method of nano-Zn 0.85 Mg 0.15 O is that: step S10 is replaced by "Mix 5.5 g of zinc acetate dihydrate, 0.46 g of magnesium acetate tetrahydrate and 150 mL of ethanol, and stir at 80 °C to completely dissolve zinc acetate dihydrate to obtain a mixture".

[0125] Example 5

[0126] This example provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Example 1, the difference of the optoelectronic device in this example is only that: the material of the first electron functional sublayer is replaced with "nano Zn 0.85 Mg 0.15 O", and the material of the core of the nanoparticles in the second electron functional sublayer is replaced with "Zn 0.95 Mg 0.05 O".

[0127] The preparation method of the optoelectronic device in this example is carried out with reference to the preparation method of the optoelectronic device in Example 1.

[0128] Example 6

[0129] This example provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Example 1, the difference of the optoelectronic device in this example is only that: the material of the first electron functional sublayer is replaced with "nano Zn 0.85 Mg 0.15 O", and the material of the core of the nanoparticles in the second electron functional sublayer is replaced with "Zn 0.9 Mg 0.1 O".

[0130] The preparation method of the optoelectronic device in this example is carried out with reference to the preparation method of the optoelectronic device in Example 1.

[0131] Example 7

[0132] This example provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Example 1, the difference of the optoelectronic device in this example is only that: the material of the first electron functional sublayer is replaced with "nano Zn 0.85 Mg 0.15 O", and the material of the core of the nanoparticles in the second electron functional sublayer is replaced with "Zn 0.85 Mg 0.15 O".

[0133] The preparation method of the optoelectronic device in this example is carried out with reference to the preparation method of the optoelectronic device in Example 1.

[0134] Comparative Example 1

[0135] This comparative example provides an optoelectronic device and a preparation method thereof. Compared with the optoelectronic device in Example 1, the difference of the optoelectronic device in this comparative example is that: the electron functional layer is a single-layer structure, the thickness of the electron functional layer is 44 nm, and the material of the electron functional layer is nano ZnO. The preparation method of nano ZnO refers to Example 1.

[0136] Compared with the preparation method of the optoelectronic device in Example 1, the difference in the preparation method of the optoelectronic device in this comparative example lies in: omitting step S1.6.

[0137] Comparative Example 2

[0138] This comparative example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this comparative example is that: the electron functional layer is a single-layer structure, the thickness of the electron functional layer is 44 nm, and the material of the electron functional layer is nano-Zn 0.85 Mg 0.15 O.

[0139] Compared with the preparation method of the optoelectronic device in Example 1, the difference in the preparation method of the optoelectronic device in this comparative example lies in: replacing step S1.5 with "spin-coating a nano-Zn 0.85 Mg 0.15 O-ethanol solution with a concentration of 30 mg / mL on the side of the light-emitting layer away from the hole transport layer under a nitrogen environment at normal temperature and pressure, and then placing it in a constant temperature heat treatment at 80 °C to cure into a film to obtain the electron functional layer", and omitting step S1.6.

[0140] Comparative Example 3

[0141] This comparative example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this comparative example is that: the electron functional layer is a single-layer structure, the thickness of the electron functional layer is 44 nm, and the material of the electron functional layer is the nano-particle ZnO / SiO2 in Example 1.

[0142] Compared with the preparation method of the optoelectronic device in Example 1, the difference in the preparation method of the optoelectronic device in this comparative example lies in: replacing step S1.5 with "spin-coating a nano-particle solution with a concentration of 30 mg / mL on the side of the light-emitting layer away from the hole transport layer under a nitrogen environment at normal temperature and pressure, and then placing it in a constant temperature heat treatment at 80 °C to cure into a film to obtain the electron functional layer", and omitting step S1.6.

[0143] Comparative Example 4

[0144] This comparative example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this comparative example is that: replacing the first ligand connected to the uncoated part of the core of the nano-particle ZnO / SiO2 with "n-propanol", that is, replacing "then injecting propylene glycol (the volume of propylene glycol is 2% of the volume of the aqueous phase) into the aqueous phase and standing for 30 min" in step S400 of the preparation method of the nano-particle ZnO / SiO2 with "then injecting n-propanol (the volume of n-propanol is 2% of the volume of the aqueous phase) into the aqueous phase and standing for 30 min".

[0145] Compared with the preparation method of the optoelectronic device in Example 1, the difference in the preparation method of the optoelectronic device in this comparative example lies in that step S1.6 is replaced with "spin-coating a nanoparticle solution with a concentration of 5 mg / mL on the side of the first electron functional sub-layer away from the light-emitting layer in a nitrogen environment at normal temperature and pressure, so that the nanoparticle solution completely covers the side of the first electron functional sub-layer away from the light-emitting layer, stand for 15 min, and then perform a drying treatment to obtain the second electron functional sub-layer".

[0146] Experimental Example 1

[0147] Provide the first single-electron device to the eleventh single-electron device. In the up-down direction, each single-electron device is composed of a substrate, an anode, a light-emitting layer, an electron functional layer, and a cathode that are sequentially stacked. Moreover, the structural compositions of the substrate, anode, light-emitting layer, and cathode in each single-electron device are respectively the same as those of the corresponding functional layers of the optoelectronic device in Example 1. For example, the structural compositions of the light-emitting layers in each single-electron device are respectively the same as those of the light-emitting layer of the optoelectronic device in Example 1. The structural compositions of the electron functional layers in the first single-electron device to the eleventh single-electron device are respectively the same as those of the electron functional layers of the optoelectronic devices in Example 1 to Example 7 and Comparative Example 1 to Comparative Example 4. For example: the structural composition of the electron functional layer in the first single-electron device is the same as that of the electron functional layer of the optoelectronic device in Example 1. Another example: the structural composition of the electron functional layer in the eleventh single-electron device is the same as that of the electron functional layer of the optoelectronic device in Comparative Example 4.

[0148] Perform performance detection on the first single-electron device to the eleventh single-electron device. Use a Fosida FPD optical property measurement device (including an Ocean Optics USB2000, a LabView-controlled QE-PRO spectrometer, a Keithley 2400, a high-precision digital source meter Keithley 6485, an optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various related connection wires and data cards, an efficiency test dark box, and a data acquisition system, etc., to build an efficiency test system) to detect and obtain the voltage (U EOD , V) of each single-electron device under the drive of a constant current (2 mA). The detection environmental conditions are: environmental temperature 25 °C, environmental humidity 50%.

[0149] The performance detection data of each single-electron device are shown in Table 1 below:

[0150] Table 1 List of performance detection data of the first single-electron device to the eleventh single-electron device

[0151]

[0152]

[0153] As can be seen from Table 2, compared with the eighth single-electron device and the ninth single-electron device, the U of the first to seventh single-electron devices EOD does not show a significant increase, that is, the electron injection level does not show an obvious decrease. From this, it can be known that: a second electron functional sub-layer is introduced between the first electron functional sub-layer and the cathode, and the nanoparticles in the second electron functional sub-layer are arranged in a single layer, which has almost no negative impact on the electron conduction process of the optoelectronic device. In addition, from the U of the first to seventh single-electron devices EOD it can be seen that by controlling the magnesium doping amount of zinc oxide in the first electron functional sub-layer and the magnesium doping amount of the core of the nanoparticles in the second electron functional sub-layer, the electron injection level of the optoelectronic device can be regulated.

[0154] The U of the tenth single-electron device EOD is relatively high, corresponding to a poor electron injection level. The reason may be that: the electron functional layer is a single-layer structure, and the material of the electron functional layer is nanoparticles ZnO / SiO2, and the nanoparticles ZnO / SiO2 in the electron functional layer are arranged in multiple layers, and SiO2 does not have conductivity, resulting in a negative impact on the electron conduction process.

[0155] Experimental Example 2

[0156] A life test device was used to detect the device life of the optoelectronic devices in Examples 1 to 7 and Comparative Examples 1 to 4 (placed in an environment with a temperature of 25 °C and a humidity of 50% for 72 h after packaging). The test method for the device life is as follows: under the drive of a constant current (2 mA), a 128-channel QLED life test system was used to perform electroluminescence life analysis on each optoelectronic device, record the time (T95, h) required for each optoelectronic device to decay from the maximum brightness to 95%, and calculate the time (T95@1000nit, h) required for each optoelectronic device to decay from 100% to 95% in brightness at a brightness of 1000 nit through the decay fitting formula.

[0157] The performance detection data of each optoelectronic device at 25 °C are shown in Table 1 below:

[0158] Table 1 List of device life data of optoelectronic devices in Examples 1 to 7 and Comparative Examples 1 to 4

[0159]

[0160]

[0161] As can be seen from Table 1, compared with the device lifetimes of the optoelectronic devices in Comparative Example 1, Comparative Example 3, and Comparative Example 4, the device lifetimes of the optoelectronic devices in Examples 1 to 7 are more excellent. Therefore, the performance stability of the optoelectronic devices in Examples 1 to 7 is significantly better than that of the optoelectronic devices in Comparative Example 1, Comparative Example 3, and Comparative Example 4. For example, T95@1000nit of the optoelectronic device in Example 1 is 1.7 times that of the optoelectronic device in Comparative Example 1. Compared with the device lifetime of the optoelectronic device in Comparative Example 2, the device lifetimes of the optoelectronic devices in Examples 4 to 7 are more excellent. Therefore, the performance stability of the optoelectronic devices in Examples 1 to 7 is significantly better than that of the optoelectronic device in Comparative Example 2. For example, T95@1000nit of the optoelectronic device in Example 7 is 2 times that of the optoelectronic device in Comparative Example 2.

[0162] It can be seen therefrom that introducing a second electron functional sublayer between the first electron functional sublayer and the cathode can effectively improve the problem that the cathode is oxidized by the first metal oxide 103 in the first electron functional sublayer, thereby improving the problem of device performance decay caused by cathode oxidation, enhancing the performance stability of the optoelectronic device, and increasing the device lifetime of the optoelectronic device.

[0163] In the optoelectronic devices of Comparative Example 1 and Comparative Example 2, the electron functional layer is in direct contact with the cathode, and zinc oxide in the electron functional layer will oxidize Ag in the cathode to generate AgO, resulting in a decrease in the device lifetime of the optoelectronic device. In the optoelectronic device of Comparative Example 3, the electron functional layer is a single-layer structure, and the material of the electron functional layer is nanoparticle ZnO / SiO2, and the nanoparticle ZnO / SiO2 in the electron functional layer is arranged in multiple layers. Since SiO2 does not have conductivity, the electron injection level is significantly decreased, and the ZnO core of some nanoparticles still contacts the cathode, resulting in a decrease in the device lifetime of the optoelectronic device. In the optoelectronic device of Comparative Example 4, the ligand connected to the uncoated part of the core in the nanoparticle ZnO / SiO2 is n-propanol, and n-propanol contains only one coordination group and cannot be connected to ZnO in the first electron functional sublayer. Therefore, the ZnO core of some nanoparticles still contacts the cathode, resulting in a decrease in the device lifetime of the optoelectronic device.

[0164] The above has introduced in detail an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device provided by the embodiments of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An optoelectronic device, characterized in that, Comprising: An anode and a cathode arranged oppositely; And An electronic functional layer disposed between the anode and the cathode; Wherein, the electronic functional layer includes a first electronic functional sub-layer and a second electronic functional sub-layer, the material of the first electronic functional sub-layer contains a first metal oxide, the material of the second electronic functional sub-layer contains nanoparticles with a core-shell structure, and the material of the core of the nanoparticles contains a second metal oxide.

2. The optoelectronic device according to claim 1, characterized in that, The shell part of the nanoparticles coats the core of the nanoparticles; and / or The material of the shell of the nanoparticles is an insulating compound; optionally, the insulating compound is selected from one or more of oxides of silicon and nitrides of silicon; and / or The first metal oxide is selected from one or more of oxides of zinc, oxides of titanium, oxides of tin, oxides of barium, oxides of tantalum, oxides of aluminum, oxides of zirconium, magnesium zinc oxide, calcium zinc oxide, zirconium zinc oxide, gallium zinc oxide, aluminum zinc oxide, lithium zinc oxide, titanium zinc oxide, yttrium zinc oxide, indium tin oxide, and lithium titanium oxide; and / or The second metal oxide is selected from one or more of oxides of zinc, oxides of titanium, oxides of tin, oxides of barium, oxides of tantalum, oxides of aluminum, oxides of zirconium, magnesium zinc oxide, calcium zinc oxide, zirconium zinc oxide, gallium zinc oxide, aluminum zinc oxide, lithium zinc oxide, titanium zinc oxide, yttrium zinc oxide, indium tin oxide, and lithium titanium oxide; and / or The average particle size of the nanoparticles is 3nm to 10nm, and / or the mass of the shell of the nanoparticles accounts for 5% to 15% of the total mass of the nanoparticles, and / or, the oxygen atoms in the first metal oxide are connected to the insulating compound by covalent bonds; and / or The nanoparticles in the second electronic functional sub-layer are arranged in a single layer; and / or The thickness of the first electronic functional sub-layer is 10nm to 60nm; and / or The optoelectronic device further includes a light-emitting layer and / or a hole functional layer disposed between the anode and the electronic functional layer; for the optoelectronic device including a light-emitting layer and a hole functional layer, the hole functional layer is disposed between the anode and the light-emitting layer.

3. The optoelectronic device according to claim 2, characterized in that, For the core of the nanoparticles, the part coated with the shell of the nanoparticles is closer to the cathode than the part not coated with the shell of the nanoparticles; and / or The average coating rate of the shell of the nanoparticles on the core of the nanoparticles is 30% to 70%; and / or The first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O, In (1-x) Sn x O and Ti (1-x) Li x O, where x represents the molar amount and 0 < x ≤ 0.5; and / or The second metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O, In (1-x) Sn x O and Ti (1-x) Li x O, where x represents the molar amount and 0 < x ≤ 0.5; and / or The insulating compound is selected from SiO2.

4. The optoelectronic device according to claim 2 or 3, characterized in that, The part of the core of the nanoparticles not coated with the shell of the nanoparticles is connected with a first ligand, and / or the surface of the shell of the nanoparticles is connected with a second ligand, and / or the surface of the first metal oxide is connected with a third ligand; Wherein, the first ligand, the second ligand, and the third ligand are each independently selected from the group consisting of hydroxyl, carboxyl, mercapto, aldehyde, -NR1R2, -O-R7, -X, -NO2, and one or more of ligands having the general formula L1-L2, X is a halogen atom, and L2 is a coordination group; Each occurrence of L1 is independently selected from an aliphatic hydrocarbon group having 1 to 30 carbon atoms which is unsubstituted or substituted by at least one first group, an aliphatic hydrocarbon oxy group having 1 to 30 carbon atoms which is unsubstituted or substituted by at least one first group, an aliphatic cyclo hydrocarbon group having 3 to 30 ring atoms which is unsubstituted or substituted by at least one first group, an aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms which is unsubstituted or substituted by at least one first group, an aryl group having 6 to 30 ring atoms which is unsubstituted or substituted by at least one first group, an aryloxy group having 6 to 30 ring atoms which is unsubstituted or substituted by at least one first group, a heteroaryl group having 5 to 30 ring atoms which is unsubstituted or substituted by at least one first group, or a heteroaryloxy group having 5 to 30 ring atoms which is unsubstituted or substituted by at least one first group, or a combination of these groups; Each occurrence of the first group is independently selected from a hydroxyl group, a carboxyl group, a mercapto group, an aldehyde group, -NR1R2, -O-R7, -X, -NO2, or a combination of these groups; each occurrence of R1 to R7 is independently selected from an aliphatic chain hydrocarbon group having 1 to 10 carbon atoms, an aliphatic chain hydrocarbon oxy group having 1 to 10 carbon atoms, an aliphatic cyclo hydrocarbon group having 3 to 10 ring atoms, an aliphatic heterocyclic hydrocarbon group having 3 to 10 ring atoms, an aryl group having 6 to 14 ring atoms, an aryloxy group having 6 to 14 ring atoms, a heteroaryl group having 5 to 14 ring atoms, or a heteroaryloxy group having 5 to 14 ring atoms, or a combination of these groups; Each occurrence of L2 is independently selected from a hydroxyl group, a carboxyl group, a mercapto group, an aldehyde group, -NR1R2, -O-R7, -X, -NO2, or a combination of these groups.

5. The optoelectronic device according to claim 4, characterized in that, The first ligand includes a coordination end and a free end. The coordination end of the first ligand is connected to the part of the core of the nanoparticle that is not coated by the shell of the nanoparticle, and the free end of the first ligand has a first electric property; the third ligand includes a coordination end and a free end. The coordination end of the third ligand is connected to the surface of the first metal oxide, and the free end of the third ligand has a second electric property; one of the first electric property and the second electric property is positive electricity and the other is negative electricity; and / or The part of the core of the nanoparticle that is not coated by the shell of the nanoparticle is connected to the first metal oxide through the first ligand and / or the third ligand.

6. The optoelectronic device according to claim 5, characterized in that, At least one of the first ligand and the third ligand is selected from one or more of aliphatic polyol compounds having 3 to 30 carbon atoms, aliphatic polyacid compounds having 3 to 30 carbon atoms, aliphatic polythiol compounds having 3 to 30 carbon atoms, aliphatic polyaldehyde compounds having 3 to 30 carbon atoms, and aliphatic polyamine compounds having 3 to 30 carbon atoms; and / or The first ligand is selected from an electron-withdrawing group or a ligand of the general formula L1-L2, and the third ligand is selected from an electron-donating group or a ligand of the general formula L1-L2. Each occurrence of L1 is independently selected from an aliphatic chain alkyl group having 1 to 30 carbon atoms substituted by at least one first group. In the first ligand, each occurrence of the first group is independently selected from an electron-withdrawing group, and in the third ligand, each occurrence of the first group is independently selected from an electron-donating group; or, the first ligand is selected from an electron-donating group or a ligand of the general formula L1-L2, and the third ligand is selected from an electron-withdrawing group or a ligand of the general formula L1-L2. Each occurrence of L1 is independently selected from an aliphatic chain alkyl group having 1 to 30 carbon atoms substituted by at least one first group. In the first ligand, each occurrence of the first group is independently selected from an electron-donating group, and in the third ligand, each occurrence of the first group is independently selected from an electron-withdrawing group; and / or The first ligand is selected from a carboxyl group, -NO2, an aldehyde group, or a ligand of the general formula L1-L2. The third ligand is selected from a hydroxyl group, -OCH3, or a ligand of the general formula L1-L2. And in the first ligand, each occurrence of the first group is independently selected from a carboxyl group, -NO2, or an aldehyde group, L2 is selected from a carboxyl group, -NO2, or an aldehyde group. And in the third ligand, each occurrence of the first group is independently selected from a hydroxyl group, or -OCH3, L2 is selected from a hydroxyl group, or -OCH3; or, the first ligand is selected from a hydroxyl group, -OCH3, or a ligand of the general formula L1-L2, the third ligand is selected from a carboxyl group, -NO2, an aldehyde group, or a ligand of the general formula L1-L2. And in the first ligand, each occurrence of the first group is independently selected from a hydroxyl group, or -OCH3, L2 is selected from a hydroxyl group, or -OCH3. And in the third ligand, each occurrence of the first group is independently selected from a carboxyl group, -NO2, or an aldehyde group, L2 is selected from a carboxyl group, -NO2, or an aldehyde group.

7. The optoelectronic device according to claim 5 or 6, characterized in that, A second ligand is connected to the surface of the shell of the nanoparticle. The second ligand includes a coordination end and a free end. The coordination end of the second ligand is connected to the surface of the shell of the nanoparticle. The free end of the third ligand is electrically neutral or has a third electric property, and the third electric property is the same as the second electric property; and / or The second ligand is selected from ligands of the general formula L1-L2, and L1 is selected from aliphatic hydrocarbon groups having 5 to 30 carbon atoms; optionally, the second ligand is selected from one or more of n-octylamine, n-nonane, n-decylamine, dodecylamine, tetradecylamine, hexadecylamine, octadecylamine, oleylamine, and eicosylamine.

8. A method for preparing an optoelectronic device, characterized in that, A method for preparing the optoelectronic device according to any one of claims 1 to 7, comprising the following steps: Providing a bottom electrode, and forming an electron functional layer on one side of the bottom electrode; and Forming a top electrode on the side of the electron functional layer away from the bottom electrode; Wherein, when the optoelectronic device is of a normal structure, the bottom electrode is an anode and the top electrode is a cathode. The step of forming an electron functional layer on one side of the bottom electrode includes the steps of: sequentially forming a first electron functional sub-layer and a second electron functional sub-layer on one side of the bottom electrode; or, when the optoelectronic device is of an inverted structure, the bottom electrode is a cathode and the top electrode is an anode. The step of forming an electron functional layer on one side of the bottom electrode includes the steps of: sequentially forming a second electron functional sub-layer and a first electron functional sub-layer on one side of the bottom electrode.

9. According to the preparation method described in claim 8, characterized in that, When the optoelectronic device is of a normal structure, before the step of forming the electron functional layer, the preparation method of the optoelectronic device further includes the step of: forming a light-emitting layer on one side of the bottom electrode, and the electron functional layer is formed on the side of the light-emitting layer away from the bottom electrode; or, when the optoelectronic device is of an inverted structure, after the step of forming the electron functional layer and before the step of forming the top electrode, the preparation method of the optoelectronic device further includes the step of: forming a light-emitting layer on the side of the electron functional layer away from the bottom electrode, and the top electrode is formed on the side of the light-emitting layer away from the bottom electrode; and / or When the optoelectronic device has a normal structure, the step of sequentially forming a first electron functional sub-layer and a second electron functional sub-layer on one side of the bottom electrode includes: forming a cured film including a first metal oxide on one side of the bottom electrode to obtain the first electron functional sub-layer, then depositing a second dispersion liquid containing the nanoparticles on the side of the first electron functional sub-layer away from the bottom electrode, and then drying the deposited second dispersion liquid to obtain the second electron functional sub-layer; or, when the optoelectronic device has an inverted structure, the step of sequentially forming a second electron functional sub-layer and a first electron functional sub-layer on one side of the bottom electrode includes: forming a cured film including the nanoparticles on one side of the bottom electrode to obtain the second electron functional sub-layer, then depositing a first dispersion liquid including a first metal oxide on the side of the second electron functional sub-layer away from the bottom electrode, and then drying the deposited first dispersion liquid to obtain the first electron functional sub-layer.

10. According to the preparation method described in claim 9, characterized in that, When the optoelectronic device has a normal structure, after the step of depositing the second dispersion liquid and before the step of drying the deposited second dispersion liquid, the step of forming an electron functional layer on one side of the bottom electrode further includes the step of: cleaning the film layer formed by depositing the second dispersion liquid with a solvent to remove the nanoparticles not connected to the first metal oxide; Optionally, the solvent is selected from alkanes having 5 to 15 carbon atoms or aliphatic alcohol compounds having 5 to 15 carbon atoms.

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