Chemical Mechanical Polishing Device

Abstract

The present disclosure provides a chemical mechanical polishing device, relating to the field of semiconductor processing technology. The device includes: a polishing pad, a polishing head, and a transmission assembly; wherein the polishing pad is fixed to the surface of a polishing table, and the polishing table is used to drive the polishing pad to rotate; the polishing head is used to clamp the wafer, and the polishing head and the polishing pad are used in conjunction to polish the wafer; the transmission assembly includes a first transmission shaft, a movable connection portion, and a second transmission shaft connected in sequence, one end of the second transmission shaft is connected to the end of the polishing head away from the wafer, and the other end of the second transmission shaft is connected to the first transmission shaft via the movable connection portion, so that when an angle is generated between the surface of the wafer and the surface of the polishing pad, the second transmission shaft can deflect relative to the first transmission shaft to make the surface of the wafer conform to the surface of the polishing pad. The device can adaptively adjust the position of the polishing pad to improve the contact uniformity between the polishing pad and the wafer surface, thereby improving the yield of the wafer.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor processing technology, and in particular to a chemical mechanical polishing device. Background Art

[0002] Chemical Mechanical Polishing (CMP) is a surface planarization process that achieves high-precision, low-damage material removal through the synergistic effect of chemical etching and mechanical polishing. It is widely used in semiconductor manufacturing, optical component processing, precision molds and other fields, especially for global wafer planarization in integrated circuit manufacturing.

[0003] Commonly used CMP processing equipment uses a horizontal grinding disc that rotates and supports a polishing pad. The wafer is fixed to the grinding head and pressed against the rotating polishing pad through steady vertical pressure. The polishing pad, polishing fluid, and wafer interact to form a chemical and mechanical polishing action on the wafer. Due to assembly errors of the polishing pad on the grinding disc and long-term wear of the polishing pad, gaps can form at the contact point between the polishing pad and the wafer, resulting in polishing defects during the wafer polishing process. Current CMP processing equipment cannot overcome this problem of poor contact between the wafer surface and the polishing pad surface.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute prior art known to ordinary technicians in the field. Summary of the Invention

[0005] In view of this, a chemical mechanical polishing device is provided, which adjusts the positional relationship between the wafer surface and the polishing pad through a transmission component to improve the contact uniformity between the wafer surface and the polishing pad, ensure the fit between the wafer surface and the polishing pad surface during the polishing process, and thus improve the yield of the wafer.

[0006] Other features and advantages of the present disclosure will become apparent from the following detailed description, or may be learned in part by practice of the present disclosure.

[0007] According to one aspect of the present disclosure, a chemical mechanical polishing device is provided, the device comprising:

[0008] A polishing pad, the polishing pad being fixed on the surface of a polishing table, and the polishing table being used to drive the polishing pad to rotate;

[0009] A grinding head, the grinding head is used to clamp the wafer, and the grinding head is used in conjunction with the grinding pad to grind the wafer;

[0010] A transmission assembly, the transmission assembly includes a first transmission shaft, a movable connection part, and a second transmission shaft connected in sequence, one end of the second transmission shaft is connected to the end of the grinding head away from the wafer, and the other end of the second transmission shaft is connected to the first transmission shaft through the movable connection part, so that when an angle is generated between the surface of the wafer and the surface of the grinding pad, the second transmission shaft can be deflected relative to the first transmission shaft to make the surface of the wafer fit the surface of the grinding pad.

[0011] In an exemplary embodiment of the present disclosure, the movable connection portion includes a limiting assembly, and the limiting assembly is connected to the first transmission shaft and the second transmission shaft respectively, so that the second transmission shaft rotates synchronously with the first transmission shaft.

[0012] In an exemplary embodiment of the present disclosure, the movable connection part also includes a first fork connection part and a second fork connection part, the first fork connection part is connected to the first transmission shaft, and the second fork connection part is connected to the second transmission shaft; the limiting assembly includes a first hinge part and a second hinge part arranged crosswise, the first hinge part is hinged to the first fork connection part, and the second hinge part is hinged to the second fork connection part.

[0013] In an exemplary embodiment of the present disclosure, the first hinge portion and the second hinge portion are perpendicular to each other.

[0014] In an exemplary embodiment of the present disclosure, the movable connection portion is a ball-and-fork universal joint structure.

[0015] In an exemplary embodiment of the present disclosure, the device further includes a plurality of air ducts, which respectively pass through the first transmission shaft, the movable connection part and the second transmission shaft, and the air ducts are connected to the grinding head, and the air ducts are used to provide compressed gas to the grinding head.

[0016] In an exemplary embodiment of the present disclosure, the device also includes at least one axially rotatable sealing joint, which is arranged at a first connection position and / or a second connection position to achieve a sealed connection of the air duct in the transmission assembly, wherein the first connection position is the connection between the movable connection part and the first transmission shaft, and the second connection position is the connection between the movable connection part and the second transmission shaft.

[0017] In an exemplary embodiment of the present disclosure, the device further includes a sealed cavity, which at least covers the transmission assembly to isolate the area where the transmission assembly is located from the area where the grinding head is located.

[0018] In an exemplary embodiment of the present disclosure, a deflection angle of the second transmission shaft relative to the first transmission shaft is 0°-5°.

[0019] In an exemplary embodiment of the present disclosure, the grinding head is connected to one end of the second transmission shaft via a quick-release ring.

[0020] The present disclosure provides a chemical mechanical polishing device, which includes a transmission assembly having a first transmission shaft, a movable connection part, and a second transmission shaft. One end of the transmission assembly is connected to the polishing head. When an angle is generated between the surface of the wafer and the surface of the polishing pad, the second transmission shaft can be deflected relative to the first transmission shaft to make the surface of the wafer fit the surface of the polishing pad, so that the polishing head can be adaptively adjusted relative to different polishing pad surfaces, thereby improving the contact uniformity and fit between the wafer surface and the polishing pad surface, thereby improving the polishing effect of the device on the wafer, and further improving the yield of the wafer.

[0021] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification, are used to explain the principles of the present disclosure. Obviously, the drawings described below are only some embodiments of the present disclosure, and those skilled in the art can derive other drawings based on these drawings without inventive effort.

[0023] Figure 1 FIG. 1 is a schematic diagram of a partial structure of a CMP device in the prior art in an exemplary embodiment of the present disclosure.

[0024] Figure 2 Schematic diagram of the structure of a chemical mechanical polishing device in an exemplary embodiment of the present disclosure.

[0025] Figure 3 Schematic diagram of the partial structure of a chemical mechanical polishing device with a limiting component in an exemplary embodiment of the present disclosure.

[0026] Figure 4 It is a top view of a limiting assembly in an exemplary embodiment of the present disclosure.

[0027] Figure 5 It is a top view of another limiting assembly in an exemplary embodiment of the present disclosure.

[0028] Figure 6 Schematic diagram of the structure of another chemical mechanical polishing device with a limiting component in an exemplary embodiment of the present disclosure.

[0029] Figure 7 Schematic diagram of the connection relationship between the second hinge portion and the second fork portion in an exemplary embodiment of the present disclosure.

[0030] Figure 8 Schematic diagram of the connection relationship between the first hinge portion and the first fork portion in an exemplary embodiment of the present disclosure.

[0031] Figure 9 Schematic diagram of a sealing structure in an exemplary embodiment of the present disclosure.

[0032] The description of the accompanying drawings is as follows:

[0033] 100, wafer; 200, grinding pad; 300, gap; 400, grinding head; 500, transmission assembly; 501, first transmission shaft; 502, movable connection part; 503, second transmission shaft; 512, first fork joint; 522, second fork joint; 551, bearing; 552, sealing structure; 553, valve structure; 600, limit assembly; 601, first hinge part; 602, second hinge part; 530, air duct; 540, sealing joint; 541, special-shaped air cavity; 542, duct connection port; 700, sealing cavity; 800, quick-release ring; 901, first connection position; 902, second connection position; α, first angle. DETAILED DESCRIPTION

[0034] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art. Like reference numerals in the figures represent identical or similar structures, and thus their detailed descriptions will be omitted. Furthermore, the figures are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0035] Although relative terms such as "upper" and "lower" are used in this specification to describe the relationship of one illustrated component to another, these terms are used herein for convenience only, such as in accordance with the orientation of the illustrations in the accompanying drawings. It will be understood that if the illustrated device were flipped upside down, the component described as "upper" would become the component "lower." When a structure is referred to as "on" another structure, this may mean that the structure is integrally formed with the other structure, that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via the other structure.

[0036] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to express open-ended inclusion and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.; the terms "first", "second" and "third" etc. are used only as labels and are not intended to limit the quantity of their objects.

[0037] In the related art, in a CMP apparatus, such as Figure 1 As shown, due to the assembly error of the polishing pad 200 on the polishing disk and the wear of the polishing pad 200 during use, a gap 300 will be formed at the contact portion between the polishing pad 200 and the wafer 100. During the polishing process of the wafer 100, the contact between the wafer 100 and the polishing pad 200 will be uneven, resulting in an abnormal polishing profile of the wafer 100 and the formation of polishing defects. In particular, for the gap 300 that cannot be directly observed, the existing CMP device cannot improve the phenomenon of the gap 300 between the polishing pad 200 and the wafer 100, and cannot overcome the problem of uneven contact between the surface of the wafer 100 and the surface of the polishing pad 200.

[0038] Based on this, the embodiment of the present disclosure provides a chemical mechanical polishing device, such as Figure 2 As shown, the device includes: a polishing pad 200, a polishing head 400 and a transmission assembly 500.

[0039] Among them, the grinding pad 200 is fixed on the surface of the grinding table, and the grinding table is used to drive the grinding pad 200 to rotate; the grinding head 400 is used to clamp the wafer 100, and the grinding head 400 is used in conjunction with the grinding pad 200 to grind the wafer 100; the transmission assembly 500 includes a first transmission shaft 501, a movable connection part 502 and a second transmission shaft 503 connected in sequence, one end of the second transmission shaft 503 is connected to the end of the grinding head 400 away from the wafer 100, and the other end of the second transmission shaft 503 is connected to the first transmission shaft 501 through the movable connection part 502, so that when an angle is generated between the surface of the wafer 100 and the surface of the grinding pad 200, the second transmission shaft 503 can be deflected relative to the first transmission shaft 501, so that the surface of the wafer 100 is in contact with the surface of the grinding pad 200.

[0040] The chemical mechanical polishing device provided by the present disclosure has a transmission assembly 500 connected to the polishing head 400. The transmission assembly 500 adopts a three-section structure, and is connected to the first transmission shaft 501 and the second transmission shaft 503 through a movable connection part 502. When an angle is generated between the surface of the wafer 100 and the surface of the polishing pad 200, the second transmission shaft 503 can be deflected relative to the first transmission shaft 501 to adaptively adjust the position of the polishing head 400 relative to the polishing pad 200, so that the surface of the wafer 100 and the surface of the polishing pad 200 are always in a fit state, thereby improving the contact uniformity between the wafer 100 and the polishing pad 200, reducing the polishing defects of the wafer 100 when polishing the wafer 100, and thereby improving the yield of the wafer 100.

[0041] The following is a detailed description of the various parts of the chemical mechanical polishing device provided by the embodiment of the present disclosure with reference to the accompanying drawings:

[0042] In the embodiments provided in the present disclosure, Figure 2 As shown, the chemical mechanical polishing device includes a polishing pad 200, which is fixed on the surface of a polishing table. The polishing table is used to drive the polishing pad 200 to rotate.

[0043] The grinding table can be a rotating metal disk with a diameter of 30 cm to 60 cm. A grinding pad 200 (also known as a polishing pad) is placed on the surface of the grinding table. The grinding table provides mechanical polishing power, rotating the grinding pad 200 to create friction with the surface of the wafer 100, thereby grinding or polishing the surface of the wafer 100. Parameters such as the rotation speed of the grinding table can be controlled by a control center within the device to ensure the accuracy of the rotational motion of the grinding pad 200 driven by the grinding table, thereby improving the polishing quality of the wafer 100.

[0044] Polishing pad 200 can be made of polyurethane (PU) or a porous composite material. Its function is to store and transport polishing slurry, providing micro-roughness for the polishing process and enhancing the mechanical polishing effect. The device also includes a polishing slurry delivery system, which can be used to precisely deliver a chemical solution containing abrasives to achieve a synergistic effect of chemical etching and mechanical polishing on wafer 100. The polishing slurry delivery system can include a polishing slurry storage tank, a hydraulic pump, a nozzle, a flow controller, and other structures. The present disclosure does not limit the specific structure of the polishing slurry delivery system, which can be designed and adjusted according to the specific usage requirements of the chemical mechanical polishing device.

[0045] In the embodiments provided in the present disclosure, Figure 2 As shown, the chemical mechanical polishing device includes a polishing head 400 , which is used to clamp the wafer 100 . The polishing head 400 is used in conjunction with a polishing pad 200 to polish the wafer 100 .

[0046] In the embodiments provided herein, the wafer 100 that can be used in the chemical mechanical polishing apparatus can be a silicon wafer, a silicon-on-insulator (SOI), a compound semiconductor wafer, a metallized wafer, a dielectric wafer, or a special substrate wafer. Metallized wafers can be made of gallium arsenide (GaAs), gallium nitride (GaN), or silicon carbide (SiC); special substrate wafers can be made of sapphire (Al2O3), quartz, or silicon germanium (SiGe); and dielectric wafers can be made of silicon oxycarbide (SiOC). Furthermore, with the advancement of semiconductors, wafers 100 can also include other types not listed. Adaptive modifications to the polishing pad 200 or polishing head 400 structures of the apparatus provided herein can be used with other types of wafers 100.

[0047] It should also be noted that in the above-mentioned embodiments of the present disclosure, the end face of the grinding head 400, the surface of the grinding table, the grinding pad 200 and the wafer 100 are all circular. In other embodiments, the end face of the grinding head 400, the surface of the grinding table, the grinding pad 200 and the wafer 100 may also adopt other shapes, for example, they may be square. This is only an example and should not limit the scope of protection of the present disclosure.

[0048] The polishing head 400 may include a wafer carrier, which may include a vacuum adsorption system, a multi-zone pressure control system, etc. The vacuum adsorption system can adsorb and fix the wafer 100, and the multi-zone pressure control system can adjust the polishing uniformity of the edge and center of the wafer 100. The apparatus provided by the present disclosure also includes other components or units for assisting the polishing head 400 in clamping the wafer 100, such as a compressed gas supply source, a pressure adjustment unit, and a pressure measurement unit. The coordination between these components or units ensures that the polishing head 400 effectively clamps the wafer 100.

[0049] The inventors have discovered that the current chemical mechanical polishing device can only fine-tune the contact pressure between the wafer 100 and the polishing pad 200 through a multi-zone pressure control system provided on the polishing head 400. When the polishing pad 200 wears out after use or there is an error in the installation of the polishing pad 200, resulting in a gap between the surface of the polishing pad 200 and the surface of the wafer 100, the pressure adjustment through the multi-zone pressure control system cannot make the wafer 100 and the polishing pad 200 effectively fit together, thereby resulting in an abnormal contour of the wafer 100 after polishing.

[0050] Therefore, in order to solve the problem that there is a gap between the wafer 100 and the polishing pad 200 and the wafer 100 and the polishing pad 200 cannot be evenly contacted, the chemical mechanical polishing device provided by the present disclosure includes a transmission component 500, such as Figure 2 As shown, the transmission assembly 500 includes a first transmission shaft 501, a movable connection portion 502, and a second transmission shaft 503 connected in sequence. One end of the second transmission shaft 503 is connected to the end of the grinding head 400 away from the wafer 100, and the other end of the second transmission shaft 503 is connected to the first transmission shaft 501 through the movable connection portion 502. When an angle is generated between the surface of the wafer 100 and the surface of the grinding pad 200, due to the movable connection portion 502 between the first transmission shaft 501 and the second transmission shaft 503, when the surface of the wafer 100 comes into contact with the grinding pad 200, the second transmission shaft 503 deflects relative to the first transmission shaft 501, so that the second transmission shaft 503 can be adaptively adjusted according to the relative positional relationship between the surface of the wafer 100 and the surface of the grinding pad 200, thereby making the surface of the wafer 100 fit the surface of the grinding pad 200, improving the contact uniformity between the wafer 100 and the grinding pad 200, and thus improving the yield of the wafer 100.

[0051] Among them, Figure 3 and Figure 6 As shown, combined Figure 2 The movable connection portion 502 includes a limiting assembly 600, which is respectively connected to the first transmission shaft 501 and the second transmission shaft 503 to enable the second transmission shaft 503 to rotate synchronously with the first transmission shaft 501. Since the rotational power provided by the device is transmitted to the wafer 100 through the first transmission shaft 501 and the second transmission shaft 503 to drive the wafer 100 to rotate, in order to improve the power transmission efficiency of the device, the limiting assembly 600 can be used to enable the second transmission shaft 503 to rotate synchronously with the first transmission shaft 501, thereby improving the grinding efficiency of the device.

[0052] In addition, by setting a limit assembly 600 between the first transmission shaft 501 and the second transmission shaft 503, on the one hand, the mechanical connection between the first transmission shaft 501 and the second transmission shaft 503 can be achieved through the limit assembly 600, and on the other hand, the deflection angle of the second transmission shaft 503 relative to the first transmission shaft 501 can be limited by the limit assembly 600 to prevent the wafer 100 from centrifugally rotating and separating from the surface of the grinding pad 200 during the grinding process.

[0053] In some embodiments, as Figure 3 As shown, the movable connection portion 502 may include a first fork connection portion 512 and a second fork connection portion 522, the first fork connection portion 512 is connected to the first transmission shaft 501, and the second fork connection portion 522 is connected to the second transmission shaft 503; the limiting assembly 600 includes a first hinge portion 601 and a second hinge portion 602 arranged crosswise, the first hinge portion 601 is hinged to the first fork connection portion 512, and the second hinge portion 602 is hinged to the second fork connection portion 522.

[0054] The first hinge portion 601 and the second hinge portion 602 are arranged crosswise, and the angle between the first hinge portion 601 and the second hinge portion 602 is a first angle α, which may be less than or equal to 90°. Figure 4 As shown, when the first angle α is equal to 90°, the first hinge portion 601 and the second hinge portion 602 are arranged in a cross shape or a quasi-cross shape; Figure 5 As shown, when the first angle α is less than 90°, the first hinge portion 601 and the second hinge portion 602 are arranged in an X shape or a quasi-X shape.

[0055] Furthermore, in order to improve the connection stability between the movable connection part 502 and the first transmission shaft 501 and the second transmission shaft 503, while ensuring the structural symmetry of the device and improving the working stability of the device, the first hinge part 601 and the second hinge part 602 are usually positioned perpendicular to each other. In addition, the first hinge part 601 and the second hinge part 602 are arranged perpendicular to each other to provide sufficient space for the subsequent arrangement or assembly of other components in the device, thereby avoiding component assembly interference.

[0056] In some embodiments, as Figure 6 As shown, the movable connection portion 502 can be a ball-fork universal joint structure, and the limiting assembly 600 is configured corresponding to the ball-fork universal joint structure. For example, the limiting assembly 600 can be a ball head and ball socket matching structure, or a thrust boss structure, or a retaining ring and retaining ring matching structure, etc. When the movable connection portion 502 is a ball-fork universal joint structure, the limiting assembly 600 can be adaptively adjusted according to the structural changes of the movable connection portion 502 to ensure the synchronous rotation of the first transmission shaft 501 and the second transmission shaft 503. In the present disclosure, the specific structure of the movable connection portion 502 using the ball-fork universal joint structure is not described in detail. The ball-fork universal joint structure can be used to adjust the deflection angle of the second transmission shaft 503 relative to the first transmission shaft 501 so that the surface of the wafer 100 and the surface of the polishing pad 200 are in contact with each other. Although the specific structure of the movable connection part with the ball-fork universal joint structure is not described in detail in the present disclosure, it can be understood that the ball-fork universal joint structure available in the art and its adaptive deformation are all within the protection scope of the present disclosure.

[0057] In the present disclosure, the deflection angle of the second transmission shaft 503 relative to the first transmission shaft 501 can be 0°~5°. For example, the deflection angle can be 0°, 0.5°, 1.0°, 1.5°, 2.0°, 2.5°, 3.0°, 3.5°, 4.0°, 4.5°, 5.0°, etc. The second transmission shaft 503 can be adaptively adjusted within the above-mentioned deflection angle range relative to the first transmission shaft 501 to ensure that the surface of the wafer 100 is in contact with the surface of the grinding pad 200. For example, when there is an angle of 2° between the surface of the wafer 100 and the surface of the grinding pad 200, when the wafer 100 and the grinding pad 200 contact each other, the second transmission shaft 503 can have a deflection of 2° relative to the first transmission shaft 501, so that the surface of the wafer 100 is evenly in contact with the surface of the grinding pad 200, thereby improving the grinding quality of the wafer 100. In addition, during the grinding process, the second transmission shaft 503 also adaptively deflects within the above-mentioned deflection angle range relative to the first transmission shaft 501 to ensure the uniformity of the fit between the surface of the wafer 100 and the surface of the grinding pad 200 during the grinding process, thereby further improving the grinding quality of the wafer 100.

[0058] It should be noted that the deflection angle range of the second transmission shaft 503 relative to the first transmission shaft 501 should not be too large. A deflection angle range that is too large will cause the grinding head 400 to undergo centrifugal motion relative to the grinding pad 200 during the grinding process, thereby causing the wafer 100 to separate from the grinding pad 200, resulting in grinding defects. The deflection angle range of the second transmission shaft 503 relative to the first transmission shaft 501 should not be too small. A deflection angle range that is too small will cause the second transmission shaft 503 to be unable to adaptively adjust relative to the angle between the surface of the wafer 100 and the surface of the grinding pad 200, or the angle of the second transmission shaft 503 adaptively deflected will not allow the surface of the wafer 100 to fit the surface of the grinding pad 200. In addition, when the angle between the surface of the grinding pad 200 and the surface of the wafer 100 exceeds 5°, assembly defects between the wafer 100 and the grinding pad 200 or wear defects of the grinding pad 200 can be directly observed, and the above-mentioned obvious assembly defects or wear defects can be effectively adjusted manually.

[0059] In the embodiments provided in this disclosure, reference is made to Figure 2 、 Figure 7 and Figure 8 The chemical mechanical polishing device also includes a plurality of air ducts 530, which respectively pass through the first transmission shaft 501, the movable connection part 502 and the second transmission shaft 503. The air ducts 530 are connected to the polishing head 400 to provide compressed gas to the polishing head 400.

[0060] Since the grinding head 400 needs to adsorb the wafer 100 and adjust the contact pressure between the wafer 100 and the grinding pad 200 by compressed gas, the device needs to be configured with a compressed gas supply source and a compressed gas supply pipeline (air duct) to provide compressed gas to the grinding head 400. Since the transmission assembly 500 of the present disclosure adopts a three-section structure, the conventional air duct 530 layout cannot be applied to the layout of multiple air ducts 530 in the transmission assembly 500 of the present disclosure. Therefore, the present disclosure provides multiple air ducts 530 that pass through the first transmission shaft 501, the movable connection part 502 and the second transmission shaft 503 to provide compressed gas to the grinding head 400.

[0061] In the present disclosure, the number of air ducts 530 can be two, three, four, five, or even more. For example, when there are four air ducts 530, the four air ducts 530 need to simultaneously pass through the first transmission shaft 501, the movable connection portion 502, and the second transmission shaft 503. To prevent the air ducts 530 from being damaged due to bending, each air duct 530 can be made of a flexible material, such as rubber, polyvinyl chloride, polyethylene, or a stainless steel hose. The outer diameters of the multiple air ducts 530 can be the same or different. The outer diameter of the air duct 530 can be selected based on the corresponding component or structure and specific function, and is not specifically limited in the present disclosure.

[0062] refer to Figure 2 、 Figure 7 、 Figure 8 and Figure 9 Considering that the air duct 530 passes through different parts of the transmission assembly 500, there is a sealing problem. In order to prevent compressed gas leakage, the device also includes at least one axially rotatable sealing joint 540, which is arranged on the first connection position 901 and / or the second connection position 902 to achieve a sealed connection of the air duct 530 in the transmission assembly 500, wherein the first connection position 901 is the connection between the movable connection part 502 and the first transmission shaft 501, and the second connection position 902 is the connection between the movable connection part 502 and the second transmission shaft 503.

[0063] refer to Figure 2 、 Figure 7 、 Figure 8 and Figure 9 In some specific embodiments, the sealing joint 540 may be provided only at the first connection position 901 or the second connection position 902. In some specific embodiments, the sealing joint 540 may be provided at both the first connection position 901 and the second connection position 902. To improve the sealing performance of the gas duct 530 within the device, the sealing joint 540 is generally provided at both the first connection position 901 and the second connection position 902.

[0064] In some embodiments, as Figure 9 As shown, combined Figure 2 The sealing joint 540 may have a special-shaped air cavity 541 and a pipe connection port 542, wherein the special-shaped air cavity 541 may be an arc-shaped air cavity, so that when the second transmission shaft 503 is deflected, the sealing joint 540 may be adaptively rotated through the arc-shaped air cavity to prevent the second transmission shaft 503 from getting stuck during the deflection process. The pipe connection port 542 in the sealing joint 540 may be connected to the air ducts 530 extending from different components to achieve airway connection of different components. The sealing joint 540 provided by the present disclosure can ensure the sealing of the air duct 530 when the first transmission shaft 501 is connected to the movable connection part 502, and at the same time ensure the sealing of the air duct 530 when the second transmission shaft 503 is connected to the movable connection part 502, thereby avoiding leakage of compressed gas, improving the gas path reliability of the device, and thus improving the functionality of the grinding head 400.

[0065] In some specific embodiments, the movable connection portion 502 includes a first fork portion 512 and a second fork portion 522, the limiting assembly 600 includes a first hinge portion 601 and a second hinge portion 602, and the number of the air guide ducts 530 is four. Figure 7 As shown, combined Figure 2 The second hinge part 602 is rotatably connected to the second fork joint 522 through a bearing 551. The four air ducts 530 in the second hinge part 602 are A1', A2', A3', and A4', respectively. The four air ducts 530 in the second fork joint 522 are A1, A2, A3, and A4, respectively, wherein A1' is connected to A1 correspondingly, A2' is connected to A2 correspondingly, A3' is connected to A3 correspondingly, and A4' is connected to A4 correspondingly. Sealing joints A1'', A2'', A3'', and A4'' are respectively provided at the connection of each air duct 530 to ensure the connection sealing of each air duct 530. In addition, a sealing structure 552, such as a spring and a sealing ring, is also provided at the connection of each air duct 530 to further seal the air duct 530. A valve structure 553 is further provided at one end of A1 ′, A2 ′, A3 ′, and A4 ′ close to the sealing joint 540 to control the flow of the compressed gas in the air guide pipe 530 .

[0066] Furthermore, the multiple air ducts 530 disposed within the second hinged portion 602 and the multiple air ducts 530 disposed within the second fork portion 522 may share the same sealing joint 540, or a portion of the multiple air ducts 530 disposed within the second hinged portion 602 and a portion of the multiple air ducts 530 disposed within the second fork portion 522 may share the same sealing joint 540, while the remaining air ducts 530 may each be provided with a corresponding sealing joint 540. In other words, the number of sealing joints 540 may be less than or equal to the number of air ducts 530. Sealing joints 540 may also be provided based on the degree of curvature of the connection between the different air ducts 530. For example, if the curvature of the connection between two connected air ducts 530 is relatively high, a separate sealing joint 540 may be provided there.

[0067] Among them, Figure 8 As shown, combined Figure 2 The first hinge portion 601 is rotatably connected to the first fork portion 512 through a bearing 551. The four air ducts 530 in the first hinge portion 601 are A1', A2', A3', and A4' respectively. The first hinge portion 601 and the second hinge portion 602 share the same set of air ducts 530. Since the air ducts 530 are made of soft material, they can be bent at the intersection of the first hinge portion 601 and the second hinge portion 602 so that the air ducts 530 extend in a preset direction.

[0068] The four air ducts 530 within the first fork portion 512 are designated B1, B2, B3, and B4, respectively. A1' is connected to B1, A2' is connected to B2, A3' is connected to B3, and A4' is connected to B4. Sealing joints B1", B2", B3", and B4" are provided at the connections of each air duct 530 to ensure the tightness of the connections. Furthermore, a sealing structure 552, such as a spring and a sealing ring, is provided at the connection of each air duct 530 to further seal the air duct 530. A valve structure 553 is also provided at the ends of A1', A2', A3', and A4' near the sealing joint 540 to control the flow of compressed gas within the air duct 530.

[0069] Furthermore, the multiple air ducts 530 disposed within the first hinged portion 601 and the multiple air ducts 530 disposed within the first fork portion 512 may share the same sealing joint 540, or a portion of the multiple air ducts 530 disposed within the first hinged portion 601 and a portion of the multiple air ducts 530 disposed within the first fork portion 512 may share a single sealing joint 540, while the remaining air ducts 530 may each be provided with a corresponding sealing joint 540. In other words, the number of sealing joints 540 may be less than or equal to the number of air ducts 530. Sealing joints 540 may also be provided based on the degree of curvature of the connection between the different air ducts 530. For example, if the curvature of the connection between two connected air ducts 530 is relatively high, a separate sealing joint 540 may be provided there.

[0070] The above embodiment takes the structure in which the movable connection part 502 includes a first fork connection part 512 and a second fork connection part 522 as an example. When the movable connection part 502 is a ball-fork universal joint structure, the layout of the air duct 530 can be adjusted accordingly to meet the airway layout of the ball-fork universal joint structure, which will not be described in detail here.

[0071] In the embodiments provided in this disclosure, reference is made to Figure 2 The chemical mechanical polishing device further includes a sealed cavity 700 , which at least covers the transmission assembly 500 to isolate the area where the transmission assembly 500 is located from the area where the polishing head 400 is located.

[0072] Among them, the sealing cavity 700 can adopt a soft film sealing cavity, for example, it can be made of one or more materials such as rubber, polytetrafluoroethylene, polyester film, polyurethane film, fiber reinforced film, etc., and the soft film sealing cavity is covered on the outer surface of the transmission component 500 in a conformal manner to prevent the contaminants generated by the transmission component 500 during operation from falling off and contaminating the wafer 100. Of course, the sealing cavity 700 can also adopt a hard sealing cavity, for example, it can be made of a metal material, and the hard sealing cavity is covered on the outer periphery of the transmission component 500 to prevent the contaminants from falling off. The sealing cavity 700 can adopt a single-layer structure or a multi-layer composite structure, and the sealing cavity 700 can be replaced according to the degree of damage during use to prevent the wafer 100 from being contaminated.

[0073] In some embodiments, as Figure 2As shown, the grinding head 400 is connected to one end of the second transmission shaft 503 via a quick-release adapter 800. When the grinding head 400 needs to be replaced, the quick-release adapter 800 can be used to quickly remove the grinding head 400 from the second transmission shaft 503, thereby speeding up the replacement of the grinding head 400. The quick-release adapter 800 can be a snap-on quick-release, threaded quick-release, flange-type quick-release, or magnetic quick-release type, and the quick-release adapter 800 can be selected based on the actual design and usage requirements of the device.

[0074] In some embodiments, the grinding head 400 can also be connected to the second transmission shaft 503 by a fixed connection method. For example, the grinding head 400 and the second transmission shaft 503 are connected by a non-detachable method such as welding. This fixed connection method can improve the connection reliability between the grinding head 400 and the second transmission shaft 503, and avoid grinding defects of the wafer 100 caused by the loosening of the grinding head 400 during the grinding process.

[0075] The chemical mechanical polishing device provided by the present disclosure can, before the start of polishing of the wafer 100, adaptively deflect the second transmission shaft 503 according to the angle between the surface of the wafer 100 and the surface of the polishing pad 200, so that the surface of the wafer 100 and the surface of the polishing pad 200 fit together; the device can also adaptively deflect the second transmission shaft 503 in real time according to the change of the angle between the surface of the wafer 100 and the surface of the polishing pad 200 during the polishing process of the wafer 100, so that the surface of the wafer 100 and the surface of the polishing pad 200 fit together in real time; in addition, the device is particularly suitable for the angle or gap between the surface of the wafer 100 and the surface of the polishing pad 200 that is difficult to detect manually, and can achieve full position adjustment of the wafer 100 to ensure real-time and effective adhesion between the surface of the wafer 100 and the surface of the polishing pad 200, thereby improving the polishing quality of the wafer 100 and further improving the yield of the wafer 100.

[0076] It should be noted that in order to facilitate the expression of the degree of wear and tear or the degree of assembly error of the polishing pad, the drawings provided in the present disclosure will exaggerate the inclination angle of the surface of the polishing pad when drawing. However, the shape of the polishing pad and the inclination angle of the surface of the polishing pad and the shapes of other components in the drawings do not limit the actual structure and shape of the polishing pad and other components.

[0077] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, with the true scope and spirit of the present disclosure being indicated by the appended claims.

Claims

1. A chemical mechanical polishing device, characterized in that: include: A polishing pad, the polishing pad being fixed on the surface of a polishing table, and the polishing table being used to drive the polishing pad to rotate; A grinding head, the grinding head is used to clamp the wafer, and the grinding head is used in conjunction with the grinding pad to grind the wafer; a transmission assembly comprising a first transmission shaft, a movable connection portion, and a second transmission shaft connected in sequence, one end of the second transmission shaft being connected to an end of the grinding head away from the wafer, and the other end of the second transmission shaft being connected to the first transmission shaft via the movable connection portion, so that when an angle is generated between the surface of the wafer and the surface of the grinding pad, the second transmission shaft can deflect relative to the first transmission shaft to make the surface of the wafer conform to the surface of the grinding pad; a plurality of air ducts, each of which passes through the first transmission shaft, the movable connection portion, and the second transmission shaft, and is connected to the grinding head, and is used to provide compressed gas to the grinding head; At least one axially rotatable sealing joint, the sealing joint having a special-shaped air cavity and a pipe connection port, wherein the special-shaped air cavity is an arc-shaped air cavity, so that when the second transmission shaft is deflected, the sealing joint can rotate through the arc-shaped air cavity to prevent the second transmission shaft from getting stuck during the deflection process.

2. The chemical mechanical polishing device according to claim 1, wherein: The movable connection portion includes a limiting assembly, and the limiting assembly is connected to the first transmission shaft and the second transmission shaft respectively, so that the second transmission shaft and the first transmission shaft rotate synchronously.

3. The chemical mechanical polishing device according to claim 2, wherein: The movable connection part also includes a first fork connection part and a second fork connection part, the first fork connection part is connected to the first transmission shaft, and the second fork connection part is connected to the second transmission shaft; the limiting assembly includes a first hinge part and a second hinge part arranged crosswise, the first hinge part is hinged to the first fork connection part, and the second hinge part is hinged to the second fork connection part.

4. The chemical mechanical polishing device according to claim 3, wherein: The first hinge portion and the second hinge portion are perpendicular to each other.

5. The chemical mechanical polishing device according to claim 2, wherein: The movable connection part is a ball-fork universal joint structure.

6. The chemical mechanical polishing apparatus according to claim 1, wherein: The sealing joint is arranged at the first connection position and / or the second connection position to achieve a sealed connection of the air duct in the transmission assembly, wherein the first connection position is the connection between the movable connection part and the first transmission shaft, and the second connection position is the connection between the movable connection part and the second transmission shaft.

7. The chemical mechanical polishing apparatus according to claim 1, wherein: The device further comprises a sealed cavity, which at least covers the transmission component to isolate the area where the transmission component is located from the area where the grinding head is located.

8. The chemical mechanical polishing apparatus according to claim 1, wherein: The deflection angle of the second transmission shaft relative to the first transmission shaft is 0°~5°.

9. The chemical mechanical polishing device according to any one of claims 1 to 8, characterized in that: The grinding head is connected to one end of the second transmission shaft through a quick-release ring.

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