Non-invasive press-pack igbt current distribution measurement method and apparatus

Abstract

The embodiment of the application provides a kind of non-invasive crimping type IGBT current distribution measurement method and device, method includes: based on the magnetic field intensity generated by the multiple parallel crimping type IGBTs to be detected based on the pre-constructed measurement array;Based on the vacuum magnetic permeability, IGBT chip current and the distance from IGBT chip to AMR sensor simulate the magnetic field intensity detected by each AMR sensor;Based on the magnetic field intensity detected by each AMR sensor, according to the magnetic induction intensity calculation coefficient of each AMR sensor and each IGBT chip current, construct the current magnetic induction intensity calculation matrix;IGBT chip current in the magnetic induction intensity calculation matrix is solved, realizes IGBT current distribution measurement;The application can not need to destroy the packaging structure of crimping type IGBT, to non-invasive way real-time detection crimping type IGBT internal current distribution.

Description

Technical Field

[0001] This application relates to the field of electronic device testing and measurement technology, specifically to a non-invasive crimp-type IGBT current distribution measurement method and device. Background Technology

[0002] Press-fit IGBT devices have attracted much attention due to their widespread application in high-voltage, high-power power electronic equipment, playing a crucial role in rail transportation, renewable energy, and industrial frequency conversion equipment. As a high-performance power switching device, press-fit IGBTs need to withstand high voltage and high current during operation, and the current uniformity of its internal parallel chips is crucial to the device's robustness and reliability. However, uneven current distribution within the device may cause local chips to bear excessive current loads, leading to electrical or thermal breakdown, which becomes a major factor in device failure.

[0003] To address this issue, researching current distribution measurement methods for parallel chips within press-fit IGBTs is of great significance. It can not only provide a reference for chip selection and optimized packaging design, but also improve device reliability.

[0004] However, because the internal chips of press-fit IGBTs are typically hermetically packaged and densely packed, the resulting complex electromagnetic field environment causes significant interference to the measurement system, making it difficult for existing technologies to accurately measure current distribution. Furthermore, traditional invasive measurement methods, such as integrating PCB Rogowski coils inside the device, while offering high measurement accuracy, damage the original packaging structure, alter internal parameters, and affect the device's normal operation. Summary of the Invention

[0005] To address the problems in the prior art, this application provides a non-invasive method and apparatus for measuring the current distribution of press-fit IGBTs, which can detect the internal current distribution of press-fit IGBTs in real time in a non-invasive manner without damaging the packaging structure of the press-fit IGBT.

[0006] To solve at least one of the above problems, this application provides the following technical solution:

[0007] According to a first aspect of the embodiments of this application, this application provides a non-invasive crimp-type IGBT current distribution measurement method, including:

[0008] The magnetic field strength generated by multiple parallel press-fit IGBTs to be tested is acquired based on a pre-built measurement array. The multiple parallel press-fit IGBT chips to be tested are disposed on protrusions inside the pre-built measurement array. The measurement array includes multiple AMR magnetic sensors uniformly placed along a circle. The direction of the magnetic field formed by the multiple parallel press-fit IGBT chips is consistent along the clockwise or counterclockwise direction of the circle. The protrusions are uniformly arranged along concentric circles inside the circle.

[0009] The magnetic field strength detected by each AMR sensor is simulated based on vacuum permeability, IGBT chip current, and the distance between the IGBT chip and the AMR sensor.

[0010] The current magnetic induction intensity calculation matrix is ​​constructed based on the magnetic field strength detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip. The magnetic induction intensity is determined based on the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction.

[0011] The IGBT chip current in the magnetic induction intensity calculation matrix is ​​solved to realize the measurement of IGBT current distribution.

[0012] According to any embodiment of this application, the simulation of the magnetic field strength detected by each AMR sensor based on vacuum permeability, IGBT chip current, and the distance from the IGBT chip to the AMR sensor includes:

[0013] The magnetic field strength detected by each AMR sensor is simulated based on the following formula:

[0014]

[0015] Where B is the magnetic field strength detected by each AMR sensor;

[0016] μ0 is the vacuum permeability;

[0017] I represents the current of the IGBT chip;

[0018] r is the distance from the IGBT chip to the AMR sensor.

[0019] According to any embodiment of this application, the step of constructing a current magnetic flux density calculation matrix based on the magnetic field strength detected by each AMR sensor, according to the magnetic flux density calculation coefficient of each AMR sensor and the current of each IGBT chip, includes:

[0020] The current magnetic flux density calculation matrix is ​​constructed based on the following formula:

[0021]

[0022] Among them, B1 to B m The magnetic flux density of each AMR sensor;

[0023] I1 to I n The current of each IGBT chip;

[0024] M 11 To M mn Calculate the magnetic flux density coefficient for each AMR sensor;

[0025]

[0026] Where, r mn The distance from each IGBT chip to each AMR sensor;

[0027] θ mn The angle between the vertical direction and the distance direction from each IGBT chip to each AMR sensor.

[0028] According to any embodiment of this application, the step of solving for the IGBT chip current in the magnetic flux density calculation matrix to achieve IGBT current distribution measurement includes:

[0029] Based on the magnetic induction intensity calculation matrix, using the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix, the IGBT chip current distribution is initialized to zero, and the iteration step size parameter is set to ensure that the results gradually converge.

[0030] During the iteration process, the residual between the currently estimated IGBT chip current distribution and the actual measurement data is calculated, and the residual is corrected according to the iteration step size parameter to dynamically update the IGBT chip current distribution until the residual meets the preset accuracy requirements.

[0031] According to a second aspect of the embodiments of this application, this application provides a non-invasive crimp-type IGBT current distribution measurement device, comprising:

[0032] A measurement array arrangement module is used to: acquire the magnetic field strength generated by multiple parallel press-fit IGBTs to be tested based on a pre-built measurement array, wherein the multiple parallel press-fit IGBT chips to be tested are disposed on protrusions inside the pre-built measurement array, the measurement array includes multiple AMR magnetic sensors uniformly placed along a circle, the direction of the magnetic field formed by the multiple parallel press-fit IGBT chips is consistent along the clockwise or counterclockwise direction of the circle, and the protrusions are uniformly arranged along the concentric circles inside the circle;

[0033] The magnetic field strength simulation module is used to simulate the magnetic field strength detected by each AMR sensor based on the vacuum permeability, IGBT chip current, and the distance from the IGBT chip to the AMR sensor.

[0034] The magnetic induction intensity calculation module is used to: construct the current magnetic induction intensity calculation matrix based on the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip, wherein the magnetic induction intensity is determined based on the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction.

[0035] The current distribution solution module is used to: solve for the IGBT chip current in the magnetic induction intensity calculation matrix, and realize the IGBT current distribution measurement.

[0036] According to any embodiment of this application, the magnetic field strength simulation module is specifically used for:

[0037] The magnetic field strength detected by each AMR sensor is simulated based on the following formula:

[0038]

[0039] Where B is the magnetic field strength detected by each AMR sensor;

[0040] μ0 is the vacuum permeability;

[0041] I represents the current of the IGBT chip;

[0042] r is the distance from the IGBT chip to the AMR sensor.

[0043] According to any embodiment of this application, the magnetic induction intensity calculation module is specifically used for:

[0044] The current magnetic flux density calculation matrix is ​​constructed based on the following formula:

[0045]

[0046] Among them, B1 to B m The magnetic flux density of each AMR sensor;

[0047] I1 to I n The current of each IGBT chip;

[0048] M 11 To M mn Calculate the magnetic flux density coefficient for each AMR sensor;

[0049]

[0050] Where, r mn The distance from each IGBT chip to each AMR sensor;

[0051] θ mn The angle between the vertical direction and the distance direction from each IGBT chip to each AMR sensor.

[0052] According to any embodiment of this application, the current distribution solving module includes:

[0053] The initialization unit is used to: initialize the IGBT chip current distribution to zero based on the magnetic induction intensity calculation matrix, using the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix, and set the iteration step size parameter to ensure that the results gradually converge.

[0054] The iterative update unit is used to: calculate the residual between the currently estimated IGBT chip current distribution and the actual measurement data during the iteration process, and correct the residual according to the iteration step size parameter, and dynamically update the IGBT chip current distribution until the residual meets the preset accuracy requirements.

[0055] According to a third aspect of the embodiments of this application, this application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the steps of the non-invasive crimp-type IGBT current distribution measurement method.

[0056] According to a fourth aspect of the embodiments of this application, this application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the non-invasive crimped IGBT current distribution measurement method.

[0057] According to a fifth aspect of the embodiments of this application, this application provides a computer program product, including a computer program / instructions that, when executed by a processor, implement the steps of the non-invasive crimp-type IGBT current distribution measurement method.

[0058] As can be seen from the above technical solution, this application provides a non-invasive method and apparatus for measuring the current distribution of press-fit IGBTs. It acquires the magnetic field strength generated by multiple parallel press-fit IGBTs under test based on a pre-constructed measurement array. The multiple parallel press-fit IGBT chips under test are disposed on protrusions inside the pre-constructed measurement array. The measurement array includes multiple AMR magnetic sensors uniformly placed along a circle. The direction of the magnetic field formed by the multiple parallel press-fit IGBT chips remains consistent along the clockwise or counterclockwise direction of the circle. The protrusions are uniformly arranged concentrically along the inner circle of the circle. The magnetic field strength detected by each AMR sensor is simulated using vacuum permeability, IGBT chip current, and the distance from the IGBT chip to the AMR sensor. A magnetic induction intensity calculation matrix is ​​constructed based on the magnetic field strength detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip. The magnetic induction intensity is determined by the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction. The IGBT chip current in the magnetic induction intensity calculation matrix is ​​solved to achieve IGBT current distribution measurement. This method enables real-time, non-invasive detection of the internal current distribution of press-fit IGBTs without damaging their packaging structure. Attached Figure Description

[0059] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0060] Figure 1 This is one of the flowcharts illustrating the non-invasive crimp-type IGBT current distribution measurement method in the embodiments of this application;

[0061] Figure 2 This is a schematic diagram showing the placement of the measuring devices in the non-invasive crimped IGBT current distribution measurement method in this embodiment of the application.

[0062] Figure 3 This is the second flowchart illustrating the non-invasive crimp-type IGBT current distribution measurement method in this application embodiment;

[0063] Figure 4 This is one of the structural diagrams of the non-invasive crimp-type IGBT current distribution measurement device in the embodiments of this application;

[0064] Figure 5This is the second structural diagram of the non-invasive crimp-type IGBT current distribution measurement device in the embodiments of this application;

[0065] Figure 6 This is a schematic diagram of the structure of the electronic device in the embodiments of this application.

[0066] [Symbol Explanation]

[0067] 1A to 6A: AMR magnetic sensors;

[0068] 1B to 5B: convex surfaces. Detailed Implementation

[0069] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0070] The acquisition, storage, use, and processing of data in this application all comply with the relevant provisions of national laws and regulations.

[0071] Considering that traditional invasive measurement methods, such as integrating PCB Rogowski coils inside the device, although achieving high measurement accuracy, can damage the original packaging structure and alter its internal parameters, this application provides a non-invasive method and apparatus for measuring the current distribution of press-fit IGBTs. By constructing an AMR magnetic sensor array, the magnetic field distribution around the press-fit IGBT is detected in real time. Then, the current distribution inside the press-fit IGBT is deduced through the LANDWEBER iterative algorithm. This method does not require damaging the packaging structure of the press-fit IGBT and can detect the internal current distribution of the press-fit IGBT in real time in a non-invasive manner.

[0072] To enable real-time, non-invasive detection of the internal current distribution of a press-fit IGBT without damaging its package structure, this application provides an embodiment of a non-invasive press-fit IGBT current distribution measurement method. See [link to embodiment]. Figure 1 The non-invasive crimp-type IGBT current distribution measurement method specifically includes the following:

[0073] Step S101: The magnetic field strength generated by multiple parallel press-fit IGBTs to be tested is acquired based on a pre-built measurement array. The multiple parallel press-fit IGBT chips to be tested are disposed on protrusions inside the pre-built measurement array. The measurement array includes multiple AMR magnetic sensors uniformly placed along a circle. The magnetic field direction formed by the multiple parallel press-fit IGBT chips is consistent along the clockwise or counterclockwise direction of the circle. The protrusions are uniformly arranged along concentric circles inside the circle.

[0074] First, multiple parallel-connected press-fit IGBT chips to be tested are placed on the protrusions of the measurement array. The measurement array consists of multiple AMR (anisotropic magnetoresistive) magnetic sensors, which are evenly distributed on a circular structure and arranged around the protrusions. The protrusions are designed to fix and position the IGBT chips, ensuring that each chip has a clear geometric relationship at the center of the array. To ensure measurement accuracy, the direction of the magnetic field generated by the chips (determined by the current flow) must be consistent within the circular arrangement, i.e., the magnetic field direction must be uniformly clockwise or counterclockwise, to avoid interference and measurement errors caused by inconsistent magnetic field directions.

[0075] For example, such as Figure 2 As shown, six AMR magnetic sensors (1A to 6A) are arranged on the measurement array, each evenly spaced at 60° intervals on a circle, while the IGBT chip is located on a protrusion at the center of the array. The tangential sensitivity direction of each sensor is designed to be consistent with the direction of the magnetic field generated by the chip, thereby ensuring that the sensor can sense the magnetic field component of the chip to the greatest extent.

[0076] Among them, see Figure 2 The central area has five protrusions (1B to 5B), with one protrusion at the center and the other four spaced at 90° intervals. The IGBT chip is located on the protrusions. In the schematic diagram, the current direction is perpendicular to the plane and inwards. Six AMR magnetic sensors are evenly placed around the protrusions to form a measurement array. The AMR is only sensitive to the tangential direction of the circle in the diagram and outputs an analog voltage through the magnetic field strength.

[0077] Step S102: Simulate the magnetic field strength detected by each AMR sensor based on vacuum permeability, IGBT chip current, and distance from the IGBT chip to the AMR sensor.

[0078] Next, the magnetic field strength that each AMR sensor can detect is simulated based on a physical model. Specifically, each current path in the chip generates a magnetic field in the surrounding space. According to the Biot-Savart law, the magnetic field strength is directly proportional to the current value and inversely proportional to the distance between the sensor and the chip. This process provides accurate simulated values ​​for the subsequent construction of the magnetic flux density matrix.

[0079] Step S103: Construct the current magnetic induction intensity calculation matrix based on the magnetic field strength detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip. The magnetic induction intensity is determined based on the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction.

[0080] Based on the obtained magnetic field strength detected by the sensor, a magnetic field strength calculation matrix is ​​constructed according to the magnetic flux density calculation coefficient of each AMR sensor and the current value of each IGBT chip. The magnetic flux density calculation coefficient is determined by the following factors:

[0081] Vacuum permeability: used to describe the transmission characteristics of magnetic fields in a vacuum.

[0082] Distance: The geometric distance between the sensor and the IGBT chip.

[0083] Angle: The angle between the sensor's sensitive direction and the direction of the magnetic field generated by the chip current.

[0084] For example, if the measurement array contains 5 sensors and 3 chips, then a 5x3 magnetic induction intensity matrix can be obtained, where each matrix element corresponds to the magnetic field contribution generated by a certain sensor sensing the current of a certain chip.

[0085] By constructing this matrix, the chip current distribution can be correlated with the magnetic field strength detected by the sensor, providing a mathematical model for subsequent solutions.

[0086] Step S104: Solve for the IGBT chip current in the magnetic induction intensity calculation matrix to realize the IGBT current distribution measurement.

[0087] Finally, the constructed magnetic flux density matrix is ​​solved using the Landweb iteration method. The Landweb iteration is a numerical algorithm suitable for deriving the current distribution of an IGBT chip from magnetic field data measured by sensors. Its core idea is to progressively optimize the estimated chip current to make it as close as possible to the true value.

[0088] Specifically, an initial value is first set, for example, the initial estimate of the current of all chips is set to zero. In each iteration, the algorithm calculates the residual based on the current estimate, which is the difference between the sensor measurement and the calculated value. Then, the chip current estimate is corrected based on the residual, gradually approximating the actual current distribution.

[0089] For example, in this application, the current distribution of each IGBT chip can be accurately obtained by using the LANDWEBER iterative method, providing an important basis for evaluating the chip's operating status.

[0090] As can be seen from the above description, the non-invasive crimped IGBT current distribution measurement method provided in this application embodiment can detect the magnetic field distribution around the crimped IGBT in real time by constructing an AMR magnetic sensor array, and then deduce the internal current distribution of the crimped IGBT through the LANDWEBER iterative algorithm, without destroying the packaging structure of the crimped IGBT, and detect the internal current distribution of the crimped IGBT in real time in a non-invasive manner.

[0091] In an optional embodiment, the simulation of the magnetic field strength detected by each AMR sensor based on vacuum permeability, IGBT chip current, and the distance from the IGBT chip to the AMR sensor includes:

[0092] The magnetic field strength detected by each AMR sensor is simulated based on the following formula:

[0093]

[0094] Where B is the magnetic field strength detected by each AMR sensor;

[0095] μ0 is the vacuum permeability;

[0096] I represents the current of the IGBT chip;

[0097] r is the distance from the IGBT chip to the AMR sensor.

[0098] In an optional embodiment, the step of constructing a current magnetic flux density calculation matrix based on the magnetic field strength detected by each AMR sensor, according to the magnetic flux density calculation coefficient of each AMR sensor and the current of each IGBT chip, includes:

[0099] The current magnetic flux density calculation matrix is ​​constructed based on the following formula:

[0100]

[0101] Among them, B1 to B m The magnetic flux density of each AMR sensor;

[0102] I1 to I n The current of each IGBT chip;

[0103] M 11 To M mn Calculate the magnetic flux density coefficient for each AMR sensor;

[0104]

[0105] Where, r mnThe distance from each IGBT chip to each AMR sensor;

[0106] θ mn The angle between the vertical direction and the distance direction from each IGBT chip to each AMR sensor.

[0107] For example, see Figure 2 With 6 AMR sensors, the array output matrix is ​​as follows:

[0108]

[0109] in,

[0110] Through the above steps, a magnetic flux density calculation matrix B = MI was constructed. Therefore, it can be seen that the sensor output is linearly related to the current flowing through the conductor.

[0111] However, M may contain interference that leads to irreversibility. In order to obtain the value of I more accurately, this application uses the LANDWEBER iterative algorithm for calculation.

[0112] LANDWEBER iteration is an iterative method for solving inverse linear problems, primarily used to find the unknown vector x in a system of linear equations Ax = b. The basic formula for LANDWEBER iteration is as follows:

[0113]

[0114] Where, x (k) It is the approximate solution of the k-th iteration, where α is the step size (or relaxation parameter), and A T It is the transpose of matrix A.

[0115] The iterative process begins with an initial guess x(0), typically chosen as the zero vector. In each iteration, the residual r between the current approximate solution x(k) and the true solution is calculated. (k) =b-Ax (k) The approximate solution x(k) is updated by adding the residual r. (k) The product of matrix A and its transpose, multiplied by the step size α.

[0116] The step size α is a key parameter that affects the convergence speed and stability of the iteration. If α is too large, the iteration may diverge; if α is too small, the convergence speed will be very slow.

[0117] Typically, α is chosen to be less than The value of , where ||A|| is the norm of matrix A. The convergence of the LANDWEBER iteration depends on the properties of matrix A and the choice of step size α. If A is a matrix with full column rank and α is chosen appropriately, then the LANDWEBER iteration will converge to the minimum norm solution of the system of equations Ax = b.

[0118] In one embodiment of the non-invasive crimp-type IGBT current distribution measurement method of this application, see [link to relevant documentation]. Figure 3 The step of solving for the IGBT chip current in the magnetic flux density calculation matrix to achieve IGBT current distribution measurement includes:

[0119] Step S104A: Based on the magnetic induction intensity calculation matrix, using the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix, initialize the IGBT chip current distribution to zero, and set the iteration step size parameter to ensure that the results gradually converge.

[0120] In the initial stage, based on the magnetic flux density calculation matrix, the magnetic field strength data measured by sensors and the magnetic flux density calculation coefficient matrix are first used as input parameters to provide the foundation for the calculation model. Then, the IGBT chip current distribution is initialized to zero as the starting point for iterative solution. At this point, it is assumed that all chip currents are zero so that continuous optimization can be achieved through iteration. To ensure that the results gradually converge and avoid algorithm divergence, an appropriate iteration step size parameter needs to be set. Typically, the step size parameter is set to a value less than the reciprocal of the norm of the magnetic flux density matrix to ensure computational stability.

[0121] Step S104B: During the iteration process, calculate the residual between the currently estimated IGBT chip current distribution and the actual measurement data, and correct the residual according to the iteration step size parameter to dynamically update the IGBT chip current distribution until the residual meets the preset accuracy requirements.

[0122] During the iteration process, the estimated current distribution is dynamically corrected by calculating the residual between the current estimated value and the sensor measurement data. The residual reflects the difference between the estimated magnetic field strength and the actual measured value, and serves as the basis for judging whether the current estimate is close to the true solution. Based on the Land-Weber algorithm, the residual is corrected using the transpose of the magnetic flux density matrix and the step size parameter, gradually updating the chip current distribution. The result of each update serves as the input value for the next iteration, thus achieving iterative optimization. This iterative process continuously reduces the difference between the sensor measurement data and the estimated data, gradually approximating the true chip current distribution.

[0123] The iteration stops when the residual is less than the preset accuracy requirement or when the maximum number of iterations is reached. The final output chip current distribution is the solution result, which can accurately reflect the actual operating state of each IGBT chip. Through this process, the Land-Weber iterative method not only achieves efficient solutions for complex systems, but also overcomes the influence of noise and data interference, possessing high accuracy and stability, and providing a reliable basis for IGBT chip performance evaluation and optimization.

[0124] In summary, this application, through a non-invasive design, only requires the deployment of a measurement array composed of AMR magnetic sensors to detect the internal current distribution of press-fit IGBTs without damaging the device's packaging structure, thus avoiding the potential impact of traditional invasive detection methods on device performance and internal parameters.

[0125] Secondly, the relationship between the output signal of the magnetic sensor and the internal current of the press-fit IGBT is clear and unambiguous. Through algorithm processing based on the sensor output, the current distribution inside the press-fit IGBT can be directly and quickly deduced, and it has high measurement accuracy.

[0126] The technical solution of this application can obtain the working status of the press-fit IGBT relatively accurately, providing a reliable basis for the evaluation of the device's operating status. It also has the characteristics of non-invasiveness, high precision and ease of implementation, providing important technical support for the research and development and application of press-fit IGBT.

[0127] To enable real-time, non-invasive detection of the internal current distribution of a press-fit IGBT without damaging its package structure, this application provides an embodiment of a non-invasive press-fit IGBT current distribution measurement device for implementing all or part of the aforementioned non-invasive press-fit IGBT current distribution measurement method. See [link to embodiment]. Figure 4 The non-invasive crimp-type IGBT current distribution measurement device specifically includes the following components:

[0128] The measurement array arrangement module 1101 is used to: acquire the magnetic field strength generated by multiple parallel press-fit IGBTs to be tested based on a pre-constructed measurement array, wherein the multiple parallel press-fit IGBT chips to be tested are disposed on protrusions inside the pre-constructed measurement array, the measurement array includes multiple AMR magnetic sensors uniformly placed along a circle, the direction of the magnetic field formed by the multiple parallel press-fit IGBT chips is consistent along the clockwise or counterclockwise direction of the circle, and the protrusions are uniformly arranged along the concentric circles inside the circle;

[0129] The magnetic field strength simulation module 1102 is used to: simulate the magnetic field strength detected by each AMR sensor based on the vacuum permeability, IGBT chip current, and the distance from the IGBT chip to the AMR sensor;

[0130] The magnetic induction intensity calculation module 1103 is used to: construct the current magnetic induction intensity calculation matrix based on the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip, wherein the magnetic induction intensity is determined based on the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction.

[0131] The current distribution solution module 1104 is used to: solve the IGBT chip current in the magnetic induction intensity calculation matrix to realize IGBT current distribution measurement.

[0132] According to any embodiment of this application, the magnetic field strength simulation module is specifically used for:

[0133] The magnetic field strength detected by each AMR sensor is simulated based on the following formula:

[0134]

[0135] Where B is the magnetic field strength detected by each AMR sensor;

[0136] μ0 is the vacuum permeability;

[0137] I represents the current of the IGBT chip;

[0138] r is the distance from the IGBT chip to the AMR sensor.

[0139] According to any embodiment of this application, the magnetic induction intensity calculation module is specifically used for:

[0140] The current magnetic flux density calculation matrix is ​​constructed based on the following formula:

[0141]

[0142] Among them, B1 to B m The magnetic flux density of each AMR sensor;

[0143] I1 to I n The current of each IGBT chip;

[0144] M 11 To M mn Calculate the magnetic flux density coefficient for each AMR sensor;

[0145]

[0146] Where, r mnThe distance from each IGBT chip to each AMR sensor;

[0147] θ mn The angle between the vertical direction and the distance direction from each IGBT chip to each AMR sensor.

[0148] According to any embodiment of this application, see Figure 5 The current distribution solution module includes:

[0149] The initialization unit 1104A is used to: initialize the IGBT chip current distribution to zero based on the magnetic induction intensity calculation matrix, using the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix, and set the iteration step size parameter to ensure that the results gradually converge.

[0150] The iterative update unit 1104B is used to: calculate the residual between the currently estimated IGBT chip current distribution and the actual measurement data during the iteration process, and correct the residual according to the iteration step size parameter, and dynamically update the IGBT chip current distribution until the residual meets the preset accuracy requirements.

[0151] As can be seen from the above description, the non-invasive crimped IGBT current distribution measurement device provided in this application embodiment can detect the magnetic field distribution around the crimped IGBT in real time by constructing an AMR magnetic sensor array, and then deduce the current distribution inside the crimped IGBT through the LANDWEBER iterative algorithm, without destroying the packaging structure of the crimped IGBT, and detect the internal current distribution of the crimped IGBT in real time in a non-invasive manner.

[0152] From a hardware perspective, in order to detect the internal current distribution of a press-fit IGBT in real time in a non-invasive manner without damaging the packaging structure of the press-fit IGBT, this application provides an embodiment of an electronic device for implementing all or part of the aforementioned non-invasive press-fit IGBT current distribution measurement method. The electronic device specifically includes the following components:

[0153] The system comprises a processor, memory, a communication interface, and a bus; wherein the processor, memory, and communication interface communicate with each other via the bus; the communication interface is used to realize information transmission between the non-invasive crimp-type IGBT current distribution measurement device and core business systems, user terminals, and related databases and other related devices; the logic controller can be a desktop computer, tablet computer, or mobile terminal, etc., and this embodiment is not limited to these. In this embodiment, the logic controller can be implemented with reference to the embodiments of the non-invasive crimp-type IGBT current distribution measurement method and the non-invasive crimp-type IGBT current distribution measurement device in the embodiments, the contents of which are incorporated herein, and repeated details will not be described again.

[0154] It is understood that the user terminal may include smartphones, tablet computers, network set-top boxes, portable computers, desktop computers, personal digital assistants (PDAs), in-vehicle devices, smart wearable devices, etc. Among these, the smart wearable devices may include smart glasses, smartwatches, smart bracelets, etc.

[0155] In practical applications, parts of the non-invasive press-fit IGBT current distribution measurement method can be performed on the electronic device side as described above, or all operations can be completed in the client device. The choice can be made based on the processing power of the client device and the limitations of the user's usage scenario. This application does not impose any limitations on this. If all operations are completed in the client device, the client device may further include a processor.

[0156] The aforementioned client device may have a communication module (i.e., a communication unit) that can communicate with a remote server to achieve data transmission. The server may include a server on the task scheduling center side; in other implementation scenarios, it may also include a server on an intermediate platform, such as a server on a third-party server platform that has a communication link with the task scheduling center server. The server may include a single computer device, a server cluster consisting of multiple servers, or a distributed server structure.

[0157] Figure 6 This is a schematic block diagram illustrating the system configuration of the electronic device 9600 according to an embodiment of this application. Figure 6 As shown, the electronic device 9600 may include a central processing unit 9100 and a memory 9140; the memory 9140 is coupled to the central processing unit 9100. It is worth noting that... Figure 6 This is an example; other types of structures can also be used to supplement or replace this structure to achieve telecommunications functions or other functions.

[0158] In one embodiment, the non-invasive crimp-type IGBT current distribution measurement method function can be integrated into the central processing unit 9100. The central processing unit 9100 can be configured to perform the following control:

[0159] Step S101: The magnetic field strength generated by multiple parallel press-fit IGBTs to be tested is acquired based on a pre-built measurement array. The multiple parallel press-fit IGBT chips to be tested are disposed on protrusions inside the pre-built measurement array. The measurement array includes multiple AMR magnetic sensors uniformly placed along a circle. The direction of the magnetic field formed by the multiple parallel press-fit IGBT chips is consistent along the clockwise or counterclockwise direction of the circle. The protrusions are uniformly arranged along concentric circles inside the circle.

[0160] Step S102: Simulate the magnetic field strength detected by each AMR sensor based on vacuum permeability, IGBT chip current, and distance from the IGBT chip to the AMR sensor;

[0161] Step S103: Construct the current magnetic induction intensity calculation matrix based on the magnetic field strength detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip. The magnetic induction intensity is determined based on the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction.

[0162] Step S104: Solve for the IGBT chip current in the magnetic induction intensity calculation matrix to realize the IGBT current distribution measurement.

[0163] As can be seen from the above description, the electronic device provided in this application embodiment detects the magnetic field distribution around the press-fit IGBT in real time by constructing an AMR magnetic sensor array, and then deduces the current distribution inside the press-fit IGBT through the LANDWEBER iterative algorithm. This does not require destroying the packaging structure of the press-fit IGBT, and detects the internal current distribution of the press-fit IGBT in real time in a non-invasive manner.

[0164] In another embodiment, the non-invasive crimped IGBT current distribution measurement device can be configured separately from the central processing unit 9100. For example, the non-invasive crimped IGBT current distribution measurement device can be configured as a chip connected to the central processing unit 9100, and the non-invasive crimped IGBT current distribution measurement method function can be realized through the control of the central processing unit.

[0165] like Figure 6As shown, the electronic device 9600 may further include: a communication module 9110, an input unit 9120, an audio processor 9130, a display 9160, and a power supply 9170. It is worth noting that the electronic device 9600 does not necessarily need to include these components. Figure 6 All components shown; in addition, the electronic device 9600 may also include Figure 6 For components not shown, please refer to existing technologies.

[0166] like Figure 6 As shown, the central processing unit 9100, sometimes also referred to as a controller or operating control, may include a microprocessor or other processor device and / or logic device, which receives inputs and controls the operation of various components of the electronic device 9600.

[0167] The memory 9140 may be, for example, one or more of a cache, flash memory, hard drive, removable media, volatile memory, non-volatile memory, or other suitable devices. It may store the aforementioned failure-related information, and also store a program for executing that information. The central processing unit 9100 may execute the program stored in the memory 9140 to perform information storage or processing, etc.

[0168] Input unit 9120 provides input to central processing unit 9100. Input unit 9120 may be, for example, a keypad or touch input device. Power supply 9170 provides power to electronic device 9600. Display 9160 displays images and text. Display may be, for example, an LCD display, but is not limited thereto.

[0169] The memory 9140 can be a solid-state memory, such as a read-only memory (ROM), random access memory (RAM), a SIM card, etc. It can also be a memory that retains information even when power is off, can be selectively erased, and contains more data; examples of this type of memory are sometimes referred to as EPROMs. The memory 9140 can also be some other type of device. The memory 9140 includes a buffer memory 9141 (sometimes referred to as a buffer). The memory 9140 may include an application / function storage unit 9142 for storing application programs and function programs or processes for executing the operation of the electronic device 9600 via the central processing unit 9100.

[0170] The memory 9140 may also include a data storage unit 9143 for storing data, such as contacts, digital data, pictures, sounds, and / or any other data used by the electronic device. The driver storage unit 9144 of the memory 9140 may include various drivers for the electronic device's communication functions and / or for performing other functions of the electronic device (such as messaging applications, address book applications, etc.).

[0171] The communication module 9110 is a transmitter / receiver that sends and receives signals via the antenna 9111. The communication module (transmitter / receiver) 9110 is coupled to the central processing unit 9100 to provide input signals and receive output signals, which can be the same as in a conventional mobile communication terminal.

[0172] Based on different communication technologies, multiple communication modules 9110 can be configured in the same electronic device, such as cellular network modules, Bluetooth modules, and / or wireless LAN modules. The communication module (transmitter / receiver) 9110 is also coupled to a speaker 9131 and a microphone 9132 via an audio processor 9130 to provide audio output via the speaker 9131 and receive audio input from the microphone 9132, thereby realizing typical telecommunications functions. The audio processor 9130 may include any suitable buffer, decoder, amplifier, etc. Additionally, the audio processor 9130 is coupled to a central processing unit 9100, enabling on-device recording via the microphone 9132 and on-device playback of stored sound via the speaker 9131.

[0173] Embodiments of this application also provide a computer-readable storage medium capable of implementing all steps of the non-invasive crimp-type IGBT current distribution measurement method with a server or client execution subject in the above embodiments. The computer-readable storage medium stores a computer program that, when executed by a processor, implements all steps of the non-invasive crimp-type IGBT current distribution measurement method with a server or client execution subject in the above embodiments. For example, when the processor executes the computer program, it implements the following steps:

[0174] Step S101: The magnetic field strength generated by multiple parallel press-fit IGBTs to be tested is acquired based on a pre-built measurement array. The multiple parallel press-fit IGBT chips to be tested are disposed on protrusions inside the pre-built measurement array. The measurement array includes multiple AMR magnetic sensors uniformly placed along a circle. The direction of the magnetic field formed by the multiple parallel press-fit IGBT chips is consistent along the clockwise or counterclockwise direction of the circle. The protrusions are uniformly arranged along concentric circles inside the circle.

[0175] Step S102: Simulate the magnetic field strength detected by each AMR sensor based on vacuum permeability, IGBT chip current, and distance from the IGBT chip to the AMR sensor;

[0176] Step S103: Construct the current magnetic induction intensity calculation matrix based on the magnetic field strength detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip. The magnetic induction intensity is determined based on the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction.

[0177] Step S104: Solve for the IGBT chip current in the magnetic induction intensity calculation matrix to realize the IGBT current distribution measurement.

[0178] As can be seen from the above description, the computer-readable storage medium provided in this application embodiment can detect the magnetic field distribution around the press-fit IGBT in real time by constructing an AMR magnetic sensor array, and then deduce the current distribution inside the press-fit IGBT through the LANDWEBER iterative algorithm. This does not require destroying the packaging structure of the press-fit IGBT, and can detect the internal current distribution of the press-fit IGBT in real time in a non-invasive manner.

[0179] Embodiments of this application also provide a computer program product capable of implementing all steps in the non-invasive crimp-type IGBT current distribution measurement method with the execution subject being a server or client in the above embodiments. When executed by a processor, this computer program / instruction implements the steps of the non-invasive crimp-type IGBT current distribution measurement method. For example, the computer program / instruction implements the following steps:

[0180] Step S101: The magnetic field strength generated by multiple parallel press-fit IGBTs to be tested is acquired based on a pre-built measurement array. The multiple parallel press-fit IGBT chips to be tested are disposed on protrusions inside the pre-built measurement array. The measurement array includes multiple AMR magnetic sensors uniformly placed along a circle. The direction of the magnetic field formed by the multiple parallel press-fit IGBT chips is consistent along the clockwise or counterclockwise direction of the circle. The protrusions are uniformly arranged along concentric circles inside the circle.

[0181] Step S102: Simulate the magnetic field strength detected by each AMR sensor based on vacuum permeability, IGBT chip current, and distance from the IGBT chip to the AMR sensor;

[0182] Step S103: Construct the current magnetic induction intensity calculation matrix based on the magnetic field strength detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip. The magnetic induction intensity is determined based on the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the angle between the vertical direction and the distance direction.

[0183] Step S104: Solve for the IGBT chip current in the magnetic induction intensity calculation matrix to realize the IGBT current distribution measurement.

[0184] As can be seen from the above description, the computer program product provided in this application embodiment constructs an AMR magnetic sensor array to detect the magnetic field distribution around the press-fit IGBT in real time, and then uses the LANDWEBER iterative algorithm to deduce the current distribution inside the press-fit IGBT. This does not require destroying the packaging structure of the press-fit IGBT and can detect the internal current distribution of the press-fit IGBT in real time in a non-invasive manner.

[0185] Those skilled in the art will understand that embodiments of this application can be provided as methods, apparatus, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0186] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (devices), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0187] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1The function specified in one or more boxes.

[0188] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0189] This application uses specific embodiments to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A non-invasive press-pack IGBT current distribution measurement method, characterized by, The method comprises: Collecting magnetic field intensity generated by a plurality of parallel press-pack IGBTs to be detected based on a pre-constructed measurement array, wherein the plurality of parallel press-pack IGBT chips to be detected are arranged on a convex platform inside the pre-constructed measurement array, the measurement array comprises a plurality of AMR magnetic sensors uniformly arranged along a circle, the magnetic field direction of the plurality of parallel press-pack IGBT chips is consistent in the clockwise or counterclockwise direction along the circle, and the convex platform is uniformly arranged along an inner concentric circle of the circle; Simulating the magnetic field intensity detected by each AMR sensor based on a vacuum magnetic permeability, an IGBT chip current and a distance from the IGBT chip to the AMR sensor; Constructing a current magnetic induction intensity calculation matrix according to the magnetic field intensity detected by each AMR sensor, a magnetic induction intensity calculation coefficient of each AMR sensor and an IGBT chip current, wherein the magnetic induction intensity is determined according to the vacuum magnetic permeability, the distance from each IGBT chip to each AMR sensor and an included angle in a vertical direction and a distance direction; Solving the IGBT chip current in the magnetic induction intensity calculation matrix to realize IGBT current distribution measurement; The method according to the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor and the IGBT chip current to construct the current magnetic induction intensity calculation matrix comprises: constructing the current magnetic induction intensity calculation matrix based on the following formula: ； wherein B1 to B m is the magnetic induction strength of the each AMR sensor; I1 to I n is the current of the each IGBT chip; M 11 to M mn is the magnetic induction strength calculation coefficient of the each AMR sensor; ； wherein r mn is the distance from each IGBT chip to each AMR sensor; θ mn is the angle between the vertical direction and the distance direction from each IGBT chip to each AMR sensor.

2. The non-invasive press-pack IGBT current distribution measurement method according to claim 1, characterized by, The method of simulating the magnetic field intensity detected by each AMR sensor based on the vacuum magnetic permeability, the IGBT chip current and the distance from the IGBT chip to the AMR sensor comprises: Simulating the magnetic field intensity detected by each AMR sensor based on the following formula: ； Wherein B is the magnetic field intensity detected by each AMR sensor; μ0 is the vacuum magnetic permeability; I is the IGBT chip current; r is the distance from the IGBT chip to the AMR sensor.

3. The non-invasive press-pack IGBT current distribution measurement method according to claim 1, characterized by, The method of solving the IGBT chip current in the magnetic induction intensity calculation matrix to realize IGBT current distribution measurement comprises: Based on the magnetic induction intensity calculation matrix, the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix are used to initialize the IGBT chip current distribution to zero, and an iteration step length parameter is set to ensure that the result converges gradually; In the iteration process, the residual error between the current estimated IGBT chip current distribution and the actual measurement data is calculated, the residual error is corrected according to the iteration step length parameter, and the IGBT chip current distribution is dynamically updated until the residual error meets the preset accuracy requirement.

4. A non-invasive, crimp-type IGBT current distribution measuring device, characterized by, The device comprises: The measurement array arrangement module is configured to: collect magnetic field intensity generated by a plurality of parallel press-pack IGBTs to be detected based on a pre-constructed measurement array, wherein the plurality of parallel press-pack IGBT chips to be detected are arranged on a convex platform inside the pre-constructed measurement array, the measurement array comprises a plurality of AMR magnetic sensors arranged uniformly along a circle, the magnetic field direction of the plurality of parallel press-pack IGBT chips is consistent in the clockwise or counterclockwise direction along the circle, and the convex platform is arranged uniformly along an inner concentric circle of the circle. The magnetic field intensity simulation module is configured to: simulate the magnetic field intensity detected by each AMR sensor based on the vacuum permeability, the IGBT chip current, and the distance from the IGBT chip to the AMR sensor. The magnetic induction intensity calculation module is configured to: construct a current magnetic induction intensity calculation matrix based on the magnetic field intensity detected by each AMR sensor, the magnetic induction intensity calculation coefficient of each AMR sensor, and the current of each IGBT chip, wherein the magnetic induction intensity is determined based on the vacuum permeability, the distance from each IGBT chip to each AMR sensor, and the included angle in the vertical direction and the distance direction. The current distribution solving module is configured to: solve the IGBT chip current in the magnetic induction intensity calculation matrix to realize IGBT current distribution measurement. The magnetic induction intensity calculation module is specifically configured to: construct the current magnetic induction intensity calculation matrix based on the following formula: ； wherein B1 to B m is the magnetic induction strength of the each AMR sensor; I1 to I n is the current of the each IGBT chip; M 11 to M mn is the magnetic induction strength calculation coefficient of the each AMR sensor; ； wherein r mn is the distance from each IGBT chip to each AMR sensor; θ mn is the angle between the vertical direction and the distance direction from each IGBT chip to each AMR sensor.

5. The non-invasive, crimp-type IGBT current distribution measurement device of claim 4, wherein, The magnetic field intensity simulation module is specifically configured to: simulate the magnetic field intensity detected by each AMR sensor based on the following formula: ； wherein B is the magnetic field intensity detected by each AMR sensor; μ0 is the vacuum permeability; I is the IGBT chip current; r is the distance from the IGBT chip to the AMR sensor.

6. The non-invasive, crimp-type IGBT current distribution measurement device of claim 4, wherein, The current distribution solving module comprises: An initialization unit is configured to: based on the magnetic induction intensity calculation matrix, initialize the IGBT chip current distribution to be zero by using the magnetic field intensity data measured by the sensor and the magnetic induction intensity calculation coefficient matrix, and set an iteration step parameter to ensure that the result converges gradually. An iterative updating unit is configured to: in the iteration process, calculate the residual error between the current estimated IGBT chip current distribution and the actual measurement data, correct the residual error according to the iteration step parameter, and dynamically update the IGBT chip current distribution until the residual error meets the preset accuracy requirement.

7. An electronic device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, The processor executes the program to realize the steps of the non-intrusive press-pack IGBT current distribution measurement method in any one of claims 1 to 3.

8. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to realize the steps of the non-intrusive press-pack IGBT current distribution measurement method in any one of claims 1 to 3.

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