Upper electrode structure, semiconductor process chamber and semiconductor process equipment

Abstract

The invention discloses an upper electrode structure, a semiconductor process chamber and semiconductor process equipment, and the upper electrode structure comprises an upper electrode assembly which is arranged at the top of the semiconductor process chamber; the magnetic assembly is arranged above the upper electrode assembly, the magnetic assembly comprises at least two coil assemblies, and the at least two coil assemblies are arranged in the vertical direction; each coil group comprises a first coil and at least one second coil, the at least one second coil is sequentially nested, the second coil on the innermost side is nested on the outer side of the first coil, and the second coil and the first coil independently receive direct current power supply. The magnetic assembly is divided into multiple layers in the axial direction and multiple areas in the radial direction, and whether the coil of each layer and each area is loaded with voltage or not can be independently controlled, so that the radial distribution of plasmas can be accurately regulated and controlled, the uniformity of the plasmas can be improved, the spatial reuse rate of the upper electrode structure can be improved, and the machine cost can be reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and particularly to an upper electrode structure, a semiconductor process chamber, and a semiconductor process equipment. Background Art

[0002] In the integrated circuit (IC) manufacturing process, dry etching is an increasingly important step. As the IC feature size continues to decrease, the proportion of dry etching in the production line is getting higher and higher. A traditional capacitively coupled plasma (CCP) process chamber includes an upper electrode and a lower electrode arranged opposite to each other, and a radio frequency power supply is loaded on the lower electrode, and the upper electrode only serves as one of the plates of the capacitor. After the process gas enters the process chamber from the upper electrode, plasma is obtained by discharging and ionizing between the upper electrode and the lower electrode, and the plasma bombards the surface of the wafer to etch the wafer.

[0003] Generally speaking, the more uniform the plasma distribution is, the better the etching uniformity is. The traditional process chamber can only improve the plasma uniformity through the structural size and installation accuracy, and the improvement effect is limited, and there are great limitations in application. Summary of the Invention

[0004] In view of the above technical problems, the present application provides an upper electrode structure, a semiconductor process chamber, and a semiconductor process equipment, which can improve the problem that the existing semiconductor process chamber can only improve the plasma uniformity through the structural size and installation accuracy, resulting in limited improvement effect.

[0005] To solve the above technical problems, in a first aspect, an embodiment of the present application provides an upper electrode structure applied to a semiconductor process chamber, and the upper electrode structure includes:

[0006] An upper electrode assembly for being arranged at the top of the semiconductor process chamber;

[0007] A magnetic assembly arranged above the upper electrode assembly, the magnetic assembly includes at least two coil groups arranged in the vertical direction;

[0008] Each coil group includes a first coil and at least one second coil, the at least one second coil is nested in sequence, and the innermost second coil is nested outside the first coil, and the second coil and the first coil are independently supplied with direct current.

[0009] Optionally, the magnetic assembly further includes:

[0010] A base is disposed above the upper electrode assembly. At least two accommodation cavities are provided in the base. The at least two accommodation cavities are arranged in the vertical direction, and the at least two coil groups are correspondingly arranged in the at least two accommodation cavities;

[0011] Each of the accommodation cavities includes a first annular cavity and at least one second annular cavity. The at least one second annular cavity is nested in sequence, and the innermost second annular cavity is nested outside the first annular cavity;

[0012] In the accommodation cavity and the corresponding coil group, the first coil is disposed in the first annular cavity, and the at least one second coil is correspondingly disposed in the at least one second annular cavity.

[0013] Optionally, there are two coil groups, and each coil group includes the first coil and one second coil;

[0014] The base includes:

[0015] A bearing plate base body, on whose top surface there is a first annular groove and a second annular groove surrounding the first annular groove, and on whose bottom surface there is a third annular groove and a fourth annular groove surrounding the third annular groove;

[0016] A top cover, which covers the top surface of the bearing plate base body to form the first annular cavity and the second annular cavity on the top surface of the bearing plate base body;

[0017] A bottom cover, which covers the bottom surface of the bearing plate base body to form the first annular cavity and the second annular cavity on the bottom surface of the bearing plate base body.

[0018] Optionally, the magnetic assembly further includes:

[0019] A cooling member, which is disposed on the top surface of the base and is used to introduce a circulating cooling medium to cool the base.

[0020] Optionally, the upper electrode structure further includes:

[0021] A fixing frame, on which the upper electrode assembly is disposed. There is a first partition plate spaced from the upper electrode assembly on the fixing frame, and the first partition plate is located above the upper electrode assembly. The base is movably disposed on the first partition plate;

[0022] A first driving source, which is disposed on the first partition plate and is connected to the base for driving the base to move on the first partition plate.

[0023] Optionally, the first driving source includes:

[0024] At least one pair of first motors is arranged around the base, and the two first motors of the same pair are symmetrically arranged with respect to the center of the upper electrode assembly, and are used to jointly drive the base to move on the straight line where the two first motors are located.

[0025] Optionally, the upper electrode structure further includes:

[0026] A second driving source is arranged on the first partition and is connected to the base, and is used to adjust the tilt angle of the magnetic component or the height relative to the first partition.

[0027] Optionally, the second driving source includes:

[0028] At least three second motors are connected to the bottom surface of the base and are used to adjust the height or tilt angle of the base.

[0029] In a second aspect, an embodiment of the present application further provides a semiconductor process chamber, including a chamber body and the upper electrode structure as described in the above embodiments;

[0030] An opening is provided at the top of the chamber body, and the upper electrode structure is arranged at the opening.

[0031] Optionally, the semiconductor process chamber further includes:

[0032] A radio frequency feeding module is connected to the upper electrode structure and is used to apply a radio frequency voltage to the upper electrode structure.

[0033] In a third aspect, an embodiment of the present application further provides a semiconductor processing device, including the semiconductor process chamber as described in the above embodiments.

[0034] As described above, the upper electrode structure of the present application further includes a magnetic component. The magnetic component is arranged above the upper electrode assembly. The magnetic component includes more than two coil groups arranged in the vertical direction. Each coil group includes a first coil and at least one second coil. And in each coil group, all the second coils and the first coil are independently loaded with a DC voltage. That is, in this embodiment, the magnetic component is divided into multiple layers along the axial direction and multiple regions along the radial direction, and it is possible to separately control whether the coils in each layer and each region are loaded with voltage, so as to accurately control the distribution of the plasma in the radial direction and improve the uniformity of the plasma. In addition, compared with a single-layer or single-region coil structure, when it is necessary to improve the magnetic field ability, it is necessary to increase the number of turns or change parameters such as the coil wire diameter. Such a structure requires more space and higher cost; in this embodiment, the entire magnetic component is a multi-layer multi-region coil. When it is necessary to improve the same magnetic field ability, only the number of turns and the wire diameter of the coils in each region need to be finely adjusted, which can improve the space reuse rate of the upper electrode structure and reduce the machine cost. Description of the Drawings

[0035] The accompanying drawings herein are incorporated into the specification and form a part of this specification, showing embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. To more clearly illustrate the technical solutions of the embodiments of the present application, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, for those of ordinary skill in the art, other accompanying drawings can be obtained based on these drawings without creative efforts.

[0036] Figure 1 is a schematic structural diagram of a semiconductor process chamber in the related art;

[0037] Figure 2 is a schematic structural diagram of an upper electrode structure provided by an embodiment of the present application;

[0038] Figure 3 is a schematic diagram showing the influence of a magnetic component on the distribution of plasma provided by an embodiment of the present application;

[0039] Figure 4 is a schematic structural diagram of a magnetic component provided by an embodiment of the present application;

[0040] Figure 5 is an exploded structural diagram of a magnetic component provided by an embodiment of the present application;

[0041] Figure 6 is a schematic cross-sectional structure diagram of a cooling member provided by an embodiment of the present application;

[0042] Figure 7 is a schematic connection diagram (top view) of a magnetic component and a first driving source provided by an embodiment of the present application;

[0043] Figure 8 is a schematic position adjustment diagram (bottom view) of a magnetic component in the horizontal direction provided by an embodiment of the present application;

[0044] Figure 9 is a schematic position adjustment diagram (side view) of a magnetic component in the vertical direction provided by an embodiment of the present application;

[0045] Figure 10 is a schematic adjustment diagram (side view) of the tilt angle of a magnetic component provided by an embodiment of the present application.

[0046] The realization of the objectives of the present application, functional features, and advantages will be further described in conjunction with the embodiments with reference to the accompanying drawings. Through the above accompanying drawings, the clear embodiments of the present application have been shown, and there will be more detailed descriptions hereinafter. These accompanying drawings and written descriptions are not intended to limit the scope of the concept of the present application in any way, but to explain the concept of the present application to those skilled in the art by referring to specific embodiments. Detailed Description of the Embodiments

[0047] Exemplary embodiments will be described in detail herein, and examples thereof are shown in the accompanying drawings. When the following description refers to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. On the contrary, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0048] It should be noted that, in this document, the terms "including", "comprising", or any other variation thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or device including a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or device. Without further limitation, an element defined by the phrase "including a..." does not exclude the presence of additional identical elements in the process, method, article, or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their interpretation in the specific embodiment or further in combination with the context of the specific embodiment.

[0049] It should be further understood that the terms "comprising", "including" indicate the presence of the stated features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following" used in the present application can be interpreted inclusively, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and again, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". An exception to this definition only occurs when the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0050] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the singular forms "a", "an", and "the" used herein are also intended to include the plural forms unless the context indicates otherwise.

[0051] It should be understood that the orientation or positional relationship indicated by terms such as "top", "bottom", "upper", "lower", "vertical", "horizontal", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.

[0052] For the convenience of description, in the following embodiments, the orthogonal space formed by the horizontal plane and the vertical direction is taken as an example for illustration, and this prerequisite should not be construed as a limitation to the present application.

[0053] Please refer to Figure 1 , Figure 1 is a schematic structural diagram of a semiconductor process chamber in the related art. The semiconductor process chamber includes a chamber body 10a, an upper electrode assembly 20a and a lower electrode assembly 30a oppositely arranged in the chamber body 10a, and a cover plate 40a covering the top of the chamber body 10a. A radio frequency power supply is loaded on the lower electrode assembly 30a. The upper electrode assembly 20a only serves as one plate of the capacitor, and specifically may include an upper electrode 21a and a gas distributor 22a arranged on the top surface of the upper electrode 21a. A cavity 50a is formed between the gas distributor 22a and the cover plate 40a. Process gas passes through the ventilation hole in the center of the cover plate 40a, enters the cavity 50a, and enters the chamber body 10a through the gas distribution structure in the upper electrode assembly 20a. Plasma is formed under the discharge excitation of the upper electrode assembly 20a and the lower electrode assembly 30a to bombard and etch the surface of the wafer. This semiconductor process chamber can only improve the plasma uniformity through the structural size and installation accuracy, and the improvement effect is limited, and there are great limitations in application. Based on this, the present application provides an upper electrode structure, a semiconductor process chamber and a semiconductor process equipment.

[0054] Please refer to Figures 2 - 4 , Figure 2 is a schematic structural diagram of an upper electrode structure provided by an embodiment of the present application, Figure 3 is a schematic diagram of the influence of a magnetic component on the distribution of plasma provided by an embodiment of the present application, Figure 4 is a schematic structural diagram of a magnetic component provided by an embodiment of the present application. The upper electrode structure may include an upper electrode assembly 10 and a magnetic component 20. In application, the upper electrode assembly 10 is arranged at the top of the semiconductor process chamber, for example, it can be supported on the side wall of the chamber body 100.

[0055] The magnetic component 20 is disposed above the upper electrode component 10. For example, the magnetic component 20 can be mounted above the upper electrode component 10 through structures such as brackets. The specific installation method is not particularly limited in the embodiments of the present application. The magnetic component 20 includes at least two coil groups 21. All the coil groups 21 are arranged in the vertical direction. Each coil group 21 includes a first coil 211 and at least one second coil 212. All the second coils 212 are nested in sequence, and the innermost second coil 212 is nested outside the first coil 211. All the second coils 212 and the first coil 211 are independently supplied with direct current.

[0056] Figure 2 and Figure 4 A 2×2 structure of the magnetic component 20 is shown in and

[0056] , that is, two coil groups 21 are arranged in the vertical direction. Each coil group 21 includes a first coil 211 and a second coil 212. In other embodiments, for example, for a larger process chamber or a larger-sized wafer, each magnetic component 20 may include more than two coil groups 21, and each coil group 21 may also be provided with more than two second coils 212. It should be noted that in this embodiment, the first coil 211 may be a disc shape or an annular structure with a hollow in the middle. The hollow part in the middle is used to arrange other structures. In the embodiments of the present application, the first coil 211 is taken as an annular structure for illustration, which does not constitute a limitation to the present application.

[0057] Please refer to Figure 3 , Figure 3 which is a schematic diagram of the influence of a magnetic component on the distribution of plasma provided by the embodiments of the present application. Among them, Figure 3 Taking a as a comparison diagram, the magnetic component 20 is not provided on the top surface of the upper electrode component 10, and the plasma basically moves straight towards the surface of the wafer 101 on the carrier base 200. Generally, the distribution density of the plasma is higher in the central area of the wafer and lower at the peripheral edge of the wafer. In this way, it is easy to cause the etching rate in the center to be faster than that at the edge, and at the same time, the probability of eccentricity problems increases. Figure 3 In b, the magnetic component 20 is provided on the top surface of the upper electrode component 10. After the magnetic component 20 is loaded with a direct current voltage, a radial magnetic field is generated in the vertical direction. The plasma can deflect towards the peripheral edge of the wafer under the action of the magnetic field during the downward movement, so that the plasma density in the central area decreases, and the density of the plasma at the edge is increased. By adjusting the voltage loaded on the magnetic component 20, the density of the plasma on the entire surface of the wafer 101 can be made more uniform.

[0058] In this embodiment, the magnetic component 20 includes more than two layers of coil groups 21. Each coil group 21 includes a first coil 211 and at least one second coil 212. And since in each coil group 21, all the second coils 212 and the first coil 211 are independently loaded with DC voltage, that is, in this embodiment, the magnetic component 20 is divided into multiple layers along the axial direction and multiple zones along the radial direction, and whether the coils in each zone of each layer are loaded with voltage can be controlled separately, so that the distribution of the plasma in the radial direction can be accurately regulated. In addition, compared with a single-layer or single-zone coil structure, when it is necessary to improve the magnetic field capacity, parameters such as increasing the number of turns or changing the wire diameter of the coil need to be changed. Such a structure requires more space and higher cost; the entire magnetic component 20 in this embodiment is a multi-layer and multi-zone coil. When it is necessary to improve the same magnetic field capacity, only the number of turns and wire diameter of the coils in each zone need to be finely adjusted, which can improve the space utilization rate of the upper electrode structure and reduce the cost of the machine. The specific structure of the upper electrode assembly 10 in this application is not limited. As an example, please continue to refer to Figure 2 , the upper electrode assembly 10 may include a cooling air inlet disk 11, an air homogenizing disk 12, a silicon electrode 13 stacked in sequence, a focusing ring 14 sleeved outside the upper electrode assembly 10, and an isolation ring 15 sleeved outside the cooling air inlet disk 11 and the air homogenizing disk 12. The cooling air inlet disk 11 can be used for gas passage, and at the same time, a cooling channel is arranged inside to cool the outside of the upper electrode assembly 10. The air homogenizing disk 12 can homogenize the gas, and the gas passes through the homogenization and finally enters the process chamber through the small holes of the silicon electrode 13.

[0059] In one embodiment, please continue to refer to Figure 2 and Figure 4 , this application provides a specific embodiment of a coil assembly. The magnetic component 20 in this embodiment may further include a base 22. The base 22 is arranged above the upper electrode assembly 10. For example, the base 22 can be supported on the side wall of the chamber body 100 and suspended above the upper electrode assembly 10 for potential isolation. At least two accommodation cavities 221 are arranged in the base 22. All the accommodation cavities 221 are arranged in the vertical direction, and all the coil groups 21 are correspondingly arranged in the accommodation cavities 221. In addition, each accommodation cavity 221 includes a first annular cavity 2211 and at least one second annular cavity 2212. All the second annular cavities 2212 are nested in sequence, and the innermost second annular cavity 2212 is nested outside the first annular cavity 2211. In the accommodation cavity 221 and the corresponding coil group 21, the first coil 211 is arranged in the first annular cavity 2211, and all the second coils 212 are correspondingly arranged in the second annular cavities 2212.

[0060] For example, the base 22 may include two accommodating cavities 221 arranged vertically, and a coil group 21 is correspondingly provided for each accommodating cavity 221. Specifically, a first annular cavity 2211 and a second annular cavity 2212 are provided in each accommodating cavity 221, and each coil group 21 includes a first coil 211 disposed in the first annular cavity 2211 and a second coil 212 disposed in the second annular cavity 2212.

[0061] As an implementation of the base 22 including the above-mentioned double-zone double-layer coil, please refer to Figure 5 , Figure 5 which is an exploded schematic view of a magnetic component provided by an embodiment of the present application. The base 22 may include: a carrier plate substrate 223, and a top cover 224 and a bottom cover 225 disposed on the upper and lower sides of the carrier plate substrate 223. A first annular groove 2231 and a second annular groove 2232 surrounding the first annular groove 2231 are provided on the top surface of the carrier plate substrate 223. The top cover 224 is sealed (such as welded) on the top surface of the carrier plate substrate 223 so that the first annular groove 2231 forms the first annular cavity 2211 and the second annular groove 2232 forms the second annular cavity 2212. The first coil 211 is disposed in the first annular cavity 2211, and the second coil 212 is disposed in the second annular cavity 2212. Similarly, a third annular groove and a fourth annular groove surrounding the third annular groove may be provided on the bottom surface of the carrier plate substrate 223 (due to the viewing angle, the structure is not visible and is not shown in the figure). The bottom cover 225 is sealed on the bottom surface of the carrier plate substrate 223 to form corresponding first and second annular cavities on the bottom surface of the carrier plate substrate 223 to respectively accommodate the first coil 211 and the second coil 212.

[0062] It can be understood that when more layers of coil groups 21 need to be provided, the carrier plate substrate 223 and the corresponding cover plates can be continuously added and stacked and welded in sequence.

[0063] In one embodiment, please continue to refer to Figure 4 and Figure 5 , the magnetic component 20 may further include a cooling member 23. The cooling member 23 is disposed on the top surface of the base 22 and is used to introduce a circulating cooling medium to cool the base 22. For example, the cooling member 23 may be disposed on the top surface of the top cover 224 of the base 22. Figure 6 which is a cross-sectional structural schematic view of a cooling member provided by an embodiment of the present application. A spiral channel 231 may be provided inside the cooling member 23. The inlet 232 and the outlet 233 of the channel 231 may both be provided on the side surface of the cooling member 23 and are used to connect pipes so that the circulating cooling medium can flow through the cooling member 23 to achieve cooling and temperature control of the base 22.

[0064] In one embodiment, please refer to Figure 2 andFigure 7 , Figure 7 is a schematic connection diagram (top view) of a magnetic component and a first driving source provided by an embodiment of the present application. The upper electrode structure may further include a fixing frame 30 and a first driving source 40. The upper electrode assembly 10 is disposed on the fixing frame 30. A first partition 31 spaced from the upper electrode assembly 10 is provided on the fixing frame 30, and the first partition 31 is located above the upper electrode assembly 10. The base 22 of the magnetic component 20 is movably disposed on the first partition 31. The first driving source 40 is disposed on the first partition 31 and connected to the base 22 for driving the base 22 to move on the first partition 31.

[0065] Since the position of the induction magnetic field of the magnetic component 20 in the horizontal direction has a great influence on the uniformity of the plasma, in this embodiment, the first driving source 40 can be used to drive the base 22 to move on the first partition 31, so as to adjust the position of the magnetic component 20 in the horizontal direction, thereby increasing the magnetic flux in the region with a weak etching rate, increasing the electron density at the edge of the corresponding region, and increasing the etching rate of the corresponding region to meet some special process requirements. These special process requirements require a large or small magnetic field intensity in certain directions, and only changing the magnitude of the multi-region input voltage cannot meet them. This embodiment can directionally improve the etching ability in a certain direction according to the process requirements, so the etching selectivity is greater. The first driving source 40 can be realized by a motor plus a conventional motion mechanism, and the specific implementation form of the present application is not particularly limited.

[0066] To avoid the magnetic field generated by the magnetic component 20 from affecting the peripheral circuit, please continue to refer to Figure 2 , preferably, a shielding cover 32 is further provided on the fixing frame 30. The shielding cover 32 is disposed on the first partition 31 to cover the magnetic component 20 inside, so that the magnetic field generated by the magnetic component 20 can only be emitted to one side of the upper electrode assembly 10.

[0067] As an example of the first driving source 40, please refer to Figure 7 and Figure 8 , Figure 8 is a schematic diagram of the position adjustment of a magnetic component in the horizontal direction (bottom view) provided by an embodiment of the present application. The first driving source 40 may include at least a pair of first motors 41. All the first motors 41 are arranged around the base 22, and the two first motors 41 in the same pair are symmetrically arranged with respect to the center of the upper electrode assembly 10 for cooperatively driving the base 22 to move on the straight line where the two first motors 41 are located. It can be understood that for Figure 7 , when the magnetic component 20 is coaxially arranged with the upper electrode assembly 10 in the initial position, the two first motors 41 in the same pair are symmetrically arranged with respect to the center of the magnetic component 20 at the same time.

[0068] For example, when it is necessary to adjust the horizontal position of the magnetic component 20, two first motors 41A and 41B of the same pair are controlled by electrical signals to respectively push the telescopic screw rods they extend out to change the position of the magnetic component 20. Among them, the screw rod of the first motor 41A at the 3 o'clock position extends, and the screw rod of the first motor 41B at the 9 o'clock position retracts to adjust the position of the magnetic component 20 in the direction of 9 o'clock (adjusted from the solid line to the dotted line position). It can be understood that in this embodiment, the more pairs of the first motors 41 are set, the more precise the position adjustment of the magnetic component 20 is.

[0069] In one embodiment, please refer to Figure 2 , the upper electrode structure may further include a second driving source 50. The second driving source 50 is disposed on the first partition 31 and is connected to the base 22 for adjusting the tilt angle of the base 22 or the height relative to the first partition 31.

[0070] Since the induced magnetic field of the magnetic component 20 decays in magnetic field intensity as the distance from the upper electrode assembly 10 increases. In this embodiment, the second driving source 50 can drive the base 22 to move in the vertical direction to adjust the tilt angle or height of the base 22 to meet some special process requirements that require a larger magnetic field intensity and cannot be satisfied only by changing the multi-zone input voltage magnitude. This embodiment can directionally improve the etching ability in a certain direction according to the process requirements, so the etching selectivity is greater. The second driving source 50 can be realized by a motor plus a conventional motion mechanism, and its specific implementation form is not particularly limited in this application.

[0071] As an example of the second driving source 50, please refer to Figure 9 and Figure 10 , Figure 9 is a schematic diagram (side view) of the position adjustment of a magnetic component in the vertical direction provided by an embodiment of the present application, Figure 10 is a schematic diagram (side view) of the tilt angle adjustment of a magnetic component provided by an embodiment of the present application. The second driving source 50 may include: at least three second motors 51. The second motors 51 are connected to the bottom surface of the base 22 of the magnetic component 20 for adjusting the height or tilt angle of the base 22 of the magnetic component 20. When it is necessary to adjust the position (i.e., height) of the magnetic component 20 in the vertical direction, all the screw rods of the second motors 51 can be controlled to extend or retract simultaneously, as shown in Figure 9 . When it is necessary to adjust the tilt angle of the magnetic component 20, the extension or retraction states of all the second motors 51 can be controlled by the three-point leveling principle so that the magnetic component 20 is in the target tilt angle.

[0072] Please continue to refer to Figure 2, embodiments of the present application further provide a semiconductor process chamber, which includes a chamber body 100 and the upper electrode structure described in each of the above embodiments. An opening is provided at the top of the chamber body 100, and the upper electrode structure is disposed at the opening. This semiconductor process chamber can be a capacitively coupled plasma etching process chamber.

[0073] In one embodiment, please continue to refer to Figure 2 , this semiconductor process chamber may further include a radio frequency feeding module 300. The radio frequency feeding module 300 is connected to the upper electrode structure and is used to apply a radio frequency voltage to the upper electrode structure.

[0074] The upper electrode structure of traditional CCP equipment generally does not have radio frequency components installed. It can only have a certain influence on plasma uniformity through structural dimensions and installation accuracy requirements, and there are significant limitations. Applying a radio frequency voltage to the upper electrode structure can increase plasma density and enlarge the available radio frequency window.

[0075] For example, the radio frequency feeding module 300 can be connected to a matcher, and then access the upper electrode structure through a radio frequency feeding copper column 301. Applying a radio frequency voltage to the upper electrode structure can increase the density of the plasma and enlarge the available radio frequency window.

[0076] In one embodiment, this semiconductor process chamber further includes a multi-channel gas inlet system. For example, multi-channel gas inlet holes can be provided on the cooling gas inlet disk 11 of the upper electrode structure, and each gas inlet hole is connected to a gas inlet pipe 400.

[0077] The gas inlet method of the traditional upper electrode structure is generally single-point gas inlet at the center point, diffusing layer by layer. Due to the sudden change in space, eddy currents will be generated, affecting gas uniformity. And when a small flow of gas is introduced during the process, part of the gas will also be absorbed by this gap, affecting gas transfer efficiency. This gap is caused by the reason of mating installation and cannot be eliminated. In this embodiment, by setting a multi-channel gas inlet system, the gas can enter the process chamber more evenly and stably.

[0078] , embodiments of the present application further provide a semiconductor process equipment, which includes the semiconductor process chamber described in each of the above embodiments. This semiconductor process equipment can be a CCP etching equipment.

[0079] For other working principles and processes of the semiconductor process chamber and semiconductor processing equipment in this embodiment, refer to the description of the upper electrode structure in the foregoing embodiments of the present invention, which will not be elaborated here.

[0080] The above has introduced in detail an upper electrode structure, a semiconductor process chamber, and a semiconductor process equipment provided by the present application. Specific examples are used herein to elaborate on the principle and implementation manner of the present application. It should be noted that in the present application, the descriptions of the various embodiments have their own emphases. For the parts not detailed or recorded in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0081] The above are only the preferred embodiments of the present application, and do not limit the patent scope of the present application. The technical features of the technical solutions of the present application can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the various technical features in the above embodiments are described. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, as long as the combination of these technical features does not conflict, is equally included in the patent protection scope of the present application.

Claims

1. An upper electrode structure is applied to a semiconductor process chamber, and is characterized in that, The upper electrode structure includes: An upper electrode assembly for being disposed on the top of the semiconductor process chamber; A magnetic assembly disposed above the upper electrode assembly, the magnetic assembly including at least two coil groups arranged in the vertical direction; Each of the coil groups includes a first coil and at least one second coil, the at least one second coil is nested in sequence, and the innermost second coil is nested outside the first coil, and the second coil and the first coil are independently supplied with direct current.

2. The upper electrode structure according to claim 1, and is characterized in that, The magnetic assembly further includes: A base disposed above the upper electrode assembly, at least two accommodating cavities are provided in the base, the at least two accommodating cavities are arranged in the vertical direction, and the at least two coil groups are correspondingly arranged in the at least two accommodating cavities; Each of the accommodating cavities includes a first annular cavity and at least one second annular cavity, the at least one second annular cavity is nested in sequence, and the innermost second annular cavity is nested outside the first annular cavity; In the accommodating cavity and the corresponding coil group, the first coil is disposed in the first annular cavity, and the at least one second coil is correspondingly disposed in the at least one second annular cavity.

3. The upper electrode structure according to claim 2, and is characterized in that, There are two coil groups, and each coil group includes the first coil and one second coil; The base includes: A carrier plate base body, on the top surface of which there are a first annular groove and a second annular groove surrounding the first annular groove, and on the bottom surface of which there are a third annular groove and a fourth annular groove surrounding the third annular groove; A top cover covering the top surface of the carrier plate base body to form the first annular cavity and the second annular cavity on the top surface of the carrier plate base body; A bottom cover covering the bottom surface of the carrier plate base body to form the first annular cavity and the second annular cavity on the bottom surface of the carrier plate base body.

4. The upper electrode structure according to claim 2, and is characterized in that, The magnetic assembly further includes: A cooling member disposed on the top surface of the base for introducing a circulating cooling medium to cool the base.

5. The upper electrode structure according to claim 2, and is characterized in that, It further includes: A fixing frame, the upper electrode assembly is disposed on the fixing frame, a first partition spaced from the upper electrode assembly is provided on the fixing frame, and the first partition is located above the upper electrode assembly, and the base is movably disposed on the first partition; A first driving source disposed on the first partition and connected to the base for driving the base to move on the first partition.

6. The upper electrode structure according to claim 5, and is characterized in that, The first driving source includes: At least a pair of first motors surrounding the base, and two first motors in the same pair are symmetrically arranged with respect to the center of the upper electrode assembly for jointly driving the base to move on the straight line where the two first motors are located.

7. The upper electrode structure according to claim 5, and is characterized in that, It further includes: A second driving source disposed on the first partition and connected to the base for adjusting the inclination angle of the magnetic assembly or the height relative to the first partition.

8. The upper electrode structure according to claim 7, and is characterized in that, The second driving source includes: At least three second motors connected to the bottom surface of the base for adjusting the height or inclination angle of the base.

9. A semiconductor process chamber, and is characterized in that, Comprising a chamber body and an upper electrode structure according to any one of claims 1-8; An opening is provided at the top of the chamber body, and the upper electrode structure is disposed at the opening.

10. The semiconductor process chamber according to claim 9, and is characterized in that, It further comprises: A radio frequency feeding module, connected to the upper electrode structure, for applying a radio frequency voltage to the upper electrode structure.

11. A semiconductor processing device, and is characterized in that, Comprising a semiconductor process chamber according to claim 9 or 10.

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