Interface fixing method and system, equipment and storage medium

Abstract

The embodiment of the invention discloses an interface fixing method and system, equipment and a storage medium, the method is applied to an interface system, the interface system comprises a first interface and a second interface, and the method comprises the following steps: under the condition that the first interface and the second interface are conducted through a plurality of memory alloy barbs and a plurality of conductive fibers, obtaining a plurality of conductive fibers in the plurality of memory alloy barbs, a first number of target memory alloy barbs in contact with any one of the plurality of conductive fibers; and under the condition that the first number is smaller than a preset first threshold value, at least part of the target memory alloy barbs are controlled to be disconnected from the corresponding first circuits, and the conductive fibers making contact with the at least part of the target memory alloy barbs are controlled to be disconnected from the corresponding second circuits. The first interface and the second interface can be connected and fastened by controlling the conduction state of the memory alloy barbs and the corresponding first circuits and controlling the conduction state of the conductive fibers and the corresponding second circuits.

Description

Technical Field

[0001] Embodiments of the present application relate to the technical field of electronic devices, including but not limited to an interface fixing method, system, device, and storage medium. Background Art

[0002] When establishing a wired connection between electronic devices, common interfaces such as spring probes (POGO PINs) or USB interfaces are often selected. Users need to first accurately align the cable or charging port with the interface, and then use the magnetic adsorption force or snap device of the interface to fix it to ensure a stable connection between the two devices, so as to realize a series of services such as charging and data transmission.

[0003] In related technologies, when the interface is inserted and contacted, its angle and position are often fixed. Once the interface contact is misaligned, it may lead to abnormal conductive communication, which brings inconvenience to users, is not convenient for users to perform blind operations, and affects the user experience. Summary of the Invention

[0004] In view of this, it is possible to control the conduction state of the shape memory alloy barbs and the corresponding first circuit, and control the conduction state of the conductive fibers and the corresponding second circuit, so as to tightly connect the first interface and the second interface. The interface fixing method, system, device, and storage medium provided by the embodiments of the present application are implemented as follows:

[0005] A first aspect of the present application provides an interface fixing method, which is applied to an interface system. The interface system includes a first interface, a second interface, a plurality of first circuits, and a plurality of second circuits. The first interface includes a plurality of shape memory alloy barbs, each shape memory alloy barb is connected to a first circuit, the second interface includes a plurality of conductive fibers, and each conductive fiber is connected to a second circuit. The method includes:

[0006] When the first interface and the second interface are conducted through the plurality of shape memory alloy barbs and the plurality of conductive fibers, obtain a first number of target shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers;

[0007] When the first number is less than a preset first threshold, control at least some of the target shape memory alloy barbs in the target shape memory alloy barbs to be disconnected from the corresponding first circuit, and control the conductive fibers in contact with the at least some target shape memory alloy barbs to be disconnected from the corresponding second circuit, so as to increase the current of the remaining shape memory alloy barbs in the target shape memory alloy barbs, thereby generating deformation to increase the number of shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with the plurality of conductive fibers.

[0008] In combination with the first aspect, in a possible embodiment, the plurality of shape memory alloy barbs are two-way shape memory alloy barbs. When the temperature of the plurality of shape memory alloy barbs is less than or equal to a preset first temperature, the plurality of shape memory alloy barbs are in an extended state. When the temperature of the plurality of shape memory alloy barbs is greater than or equal to a preset second temperature, the plurality of shape memory alloy barbs are in a retracted state. After disconnecting the conductive fibers in contact with at least some of the target shape memory alloy barbs from the corresponding second circuit, the method further includes:

[0009] Obtaining a second number of the shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers;

[0010] When the second number is greater than the first number, controlling at least some of the target shape memory alloy barbs to conduct with the corresponding first circuit, and controlling the conductive fibers in contact with at least some of the target shape memory alloy barbs to conduct with the corresponding second circuit.

[0011] In combination with the first aspect, in a possible embodiment, the target shape memory alloy barbs include a first part of the target shape memory alloy barbs and a second part of the target shape memory alloy barbs. The difference in the number between the first part of the target shape memory alloy barbs and the second part of the target shape memory alloy barbs is less than a preset second threshold. The conductive fibers in contact with the first part of the target shape memory alloy barbs are the first part of the conductive fibers, and the conductive fibers in contact with the second part of the target shape memory alloy barbs are the second part of the conductive fibers. The method further includes:

[0012] Providing a preset voltage to the first circuit that controls the conduction of the first part of the target shape memory alloy barbs, receiving the preset voltage by the second circuit that controls the conduction of the first part of the conductive fibers, grounding the second circuit that controls the conduction of the second part of the conductive fibers and the first circuit that controls the conduction of the second part of the target shape memory alloy barbs, so as to make the first interface and the second interface conduct.

[0013] In combination with the first aspect, in a possible embodiment, the plurality of shape memory alloy barbs include a first part of the shape memory alloy barbs and a second part of the shape memory alloy barbs. The difference in the number between the first part of the shape memory alloy barbs and the second part of the shape memory alloy barbs is less than a preset third threshold. Before obtaining the first number of the target shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers, the method further includes:

[0014] The first circuit that controls the conduction of the first part of the shape memory alloy barbs provides a preset voltage, the first circuit that controls the conduction of the second part of the shape memory alloy barbs is grounded, and the plurality of conductive fibers are controlled to be disconnected from the corresponding second circuit, so that some of the shape memory alloy barbs in the first part of the shape memory alloy barbs are conducted with some of the shape memory alloy barbs in the second part of the shape memory alloy barbs through the plurality of conductive fibers, so that some of the shape memory alloy barbs in the first part of the shape memory alloy barbs and some of the shape memory alloy barbs in the second part of the shape memory alloy barbs are deformed, so as to increase the number of the plurality of shape memory alloy barbs in contact with the plurality of conductive fibers.

[0015] Combined with the first aspect, in a possible embodiment, after controlling the plurality of conductive fibers to be disconnected from the corresponding second circuit, the method further includes:

[0016] Obtain a third number of the shape memory alloy barbs in the first part of the shape memory alloy barbs that are conducted with the second part of the shape memory alloy barbs;

[0017] In the case where the third number is less than a preset fourth threshold, output a prompt message, where the prompt message is used to prompt that the contact between the first interface and the second interface is poor.

[0018] Combined with the first aspect, in a possible embodiment, the method further includes:

[0019] Control the first circuit connected to each shape memory alloy barb to provide a preset voltage one by one, control the first circuits corresponding to the other shape memory alloy barbs to be disconnected, control the second circuits corresponding to the plurality of conductive fibers to be disconnected, detect the voltage values of the other shape memory alloy barbs, and divide the shape memory alloy barbs with voltage values greater than the preset voltage threshold in the other shape memory alloy barbs and the shape memory alloy barbs that are conducted with the first circuit providing the preset voltage into the same interconnection block;

[0020] Determine at least two interconnection blocks corresponding to the plurality of shape memory alloy barbs to determine the target shape memory alloy barbs.

[0021] Combined with the first aspect, in a possible embodiment, the method further includes:

[0022] According to the number of shape memory alloy barbs in each interconnection block, divide the at least two interconnection blocks into at least one first interconnection block and at least one second interconnection block, where the shape memory alloy barbs in the at least one first interconnection block are the first part of the target shape memory alloy barbs, and the shape memory alloy barbs in the at least one second interconnection block are the second part of the target shape memory alloy barbs.

[0023] In combination with the first aspect, in a possible embodiment, after determining at least two interconnected blocks corresponding to the plurality of shape memory alloy barbs, the method further includes:

[0024] Controlling a first circuit connected to the shape memory alloy barbs of each first interconnected block to provide the preset voltage, controlling a first circuit connected to the shape memory alloy barbs of each second interconnected block to be grounded, and controlling a second circuit corresponding to the plurality of conductive fibers to be disconnected;

[0025] Detecting the voltage values of the respective conductive fibers, controlling the second circuit corresponding to the conductive fiber with a voltage value greater than or equal to the preset voltage threshold to be turned on and receive the preset voltage, and controlling the second circuit corresponding to the conductive fiber with a voltage value less than the preset voltage threshold to be turned on and grounded, so as to turn on the first interface and the second interface.

[0026] A second aspect of the present application provides an interface system, the interface system includes a first interface, a second interface, a plurality of first circuits, and a plurality of second circuits. The first interface includes a plurality of shape memory alloy barbs, each shape memory alloy barb is connected to a first circuit, the second interface includes a plurality of conductive fibers, and each conductive fiber is connected to a second circuit, including:

[0027] A detection unit, configured to obtain a first number of target shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers among the plurality of shape memory alloy barbs when the first interface and the second interface are turned on through the plurality of shape memory alloy barbs and the plurality of conductive fibers;

[0028] A reinforcement unit, configured to, when the first number is less than a preset first threshold, control at least some of the target shape memory alloy barbs among the target shape memory alloy barbs to be disconnected from the corresponding first circuit, and control the conductive fibers in contact with the at least some target shape memory alloy barbs to be disconnected from the corresponding second circuit, so as to increase the current of the remaining shape memory alloy barbs among the target shape memory alloy barbs, thereby generating deformation to increase the number of shape memory alloy barbs in contact with the plurality of conductive fibers among the plurality of shape memory alloy barbs.

[0029] A third aspect of the present application provides a computer device, including a memory and a processor. The memory stores a computer program that can be run on the processor, and when the processor executes the program, the method described in the embodiments of the present application is implemented.

[0030] The interface fixing method, system, device, and storage medium provided by the embodiments of the present application can, when the first interface and the second interface are electrically connected through a plurality of shape memory alloy barbs and a plurality of conductive fibers, obtain the first number of target shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers. At this time, if different devices are connected to both ends of the first interface and the second interface, data transmission or charging services can be realized through these target shape memory alloy barbs and the conductive fibers corresponding to the target shape memory alloy barbs; when the obtained first number is less than a preset first threshold, it is confirmed that the number of target shape memory alloy barbs in contact with the conductive fibers is small, which may affect the data transmission performance or charging performance. At least some of the target shape memory alloy barbs in the target shape memory alloy barbs can be controlled to be disconnected from the corresponding first circuit, and at least some of the conductive fibers in contact with the target shape memory alloy barbs in the target shape memory alloy barbs can be controlled to be disconnected from the corresponding second circuit, so that the current passing through each of the remaining target shape memory alloy barbs increases, and then the temperature rises to cause deformation. The first interface and the second interface are pulled closer by the deformed remaining target shape memory alloy barbs to increase the number of shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with the plurality of conductive fibers, so as to tightly connect the first interface and the second interface. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The drawings herein are incorporated into the specification and form a part of this specification. These drawings illustrate embodiments consistent with the present application and, together with the specification, are used to explain the technical solutions of the present application.

[0032] Figure 1 It is a schematic structural diagram of an interface system disclosed by an embodiment of the present application;

[0033] Figure 2a It is a schematic structural diagram of a first circuit disclosed by an embodiment of the present application;

[0034] Figure 2b It is another schematic structural diagram of a first circuit disclosed by an embodiment of the present application;

[0035] Figure 3a It is a schematic structural diagram of a second circuit disclosed by an embodiment of the present application;

[0036] Figure 3b It is another schematic structural diagram of a second circuit disclosed by an embodiment of the present application;

[0037] Figure 4 It is a schematic structural diagram of a first interface and a second interface disclosed by an embodiment of the present application;

[0038] Figure 5 It is a schematic flowchart of an interface fixing method disclosed by an embodiment of the present application;

[0039] Figure 6 Another schematic flowchart of the interface fixing method disclosed in the embodiments of the present application;

[0040] Figure 7 A deformation schematic diagram of the shape memory alloy barb disclosed in the embodiments of the present application;

[0041] Figure 8 Another schematic flowchart of the interface fixing method disclosed in the embodiments of the present application;

[0042] Figure 9 A schematic flowchart of determining the target shape memory alloy barb disclosed in the embodiments of the present application;

[0043] Figure 10 Another structural schematic diagram of the first interface and the second interface disclosed in the embodiments of the present application;

[0044] Figure 11 A structural schematic diagram of the interface system provided by the embodiments of the present application;

[0045] Figure 12 A structural schematic diagram of a computer device provided by the embodiments of the present application. Detailed implementation manners

[0046] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the following will further describe the specific technical solutions of the present application in detail with reference to the accompanying drawings in the embodiments of the present application. The following embodiments are used to illustrate the present application but are not intended to limit the scope of the present application.

[0047] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of the present application and are not intended to limit the present application.

[0048] In the following description, reference is made to "some embodiments", which describe a subset of all possible embodiments. However, it can be understood that "some embodiments" can be the same subset or different subsets of all possible embodiments and can be combined with each other without conflict.

[0049] It should be noted that the terms "first / second / third" involved in the embodiments of the present application are used to distinguish similar or different objects and do not represent a specific order for the objects. It can be understood that "first / second / third" can be interchanged with a specific order or sequence when allowed, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0050] During the use of common interfaces such as spring-loaded probes (POGO PINs) or USB interfaces, their connections are usually ensured to be stable through magnetic adsorption force or snap devices. However, with the increase in the usage frequency of the interfaces and over time, the fixing ability of common interfaces may decrease, affecting the normal data transmission or charging services. For example, the adsorption force of the magnet may gradually weaken, and the snap device may also reduce its fixing effect due to wear.

[0051] In addition, for common interfaces such as spring-loaded probes or USB interfaces, attention needs to be paid to the interface position during use to accurately align the interface with the socket to ensure the correct insertion angle and complete insertion, which is not convenient for users to perform blind operations and brings inconvenience to users. Taking a spring-loaded probe with a magnetic fixing structure as an example, due to the large volume of the magnet and the large space occupied, it is difficult to design the product stacking, which in turn affects the design, production and use of devices with such interfaces.

[0052] Moreover, for common interfaces such as spring-loaded probes or USB interfaces, once the user encounters external interference such as item collision or vibration after the first insertion, the interface may become loose, and it often requires user intervention to achieve a stable connection, which may affect the normal use of the user.

[0053] In view of this, the embodiments of the present application provide an interface fixing method, system, device, and storage medium, which can control the conduction state of the shape memory alloy barb and the corresponding first circuit, and control the conduction state of the conductive fiber and the corresponding second circuit, so as to tightly connect the first interface and the second interface.

[0054] The interface fixing method provided by the embodiments of the present application is applied to an interface system, which includes a first interface, a second interface, a plurality of first circuits, and a plurality of second circuits. Among them, the first interface includes a plurality of shape memory alloy barbs, and each shape memory alloy barb is connected to a first circuit. The second interface includes a plurality of conductive fibers, and each conductive fiber is connected to a second circuit.

[0055] Please refer to Figure 1 , Figure 1 which is a schematic structural diagram of an interface system disclosed in the embodiments of the present application. As Figure 1 shown, the interface system includes a first interface 11, a second interface 12, a plurality of first circuits 15, and a plurality of second circuits 16. Among them, the first interface 11 includes a plurality of shape memory alloy barbs 13, and the second interface 12 includes a plurality of conductive fibers 14. Each shape memory alloy barb 13 is connected to a first circuit 15, and each conductive fiber 14 is connected to a second circuit 16.

[0056] In some possible embodiments, the number of shape memory alloy barbs 13 is the same as that of the first circuit 15, and the number of conductive fibers 14 is the same as that of the second circuit 16, both being in a one-to-one correspondence relationship (part of the first circuit 15 and the second circuit 16 are not shown in Figure 1 ).

[0057] In some possible embodiments, multiple shape memory alloy barbs 13 may be connected to the same first circuit 15, or multiple conductive fibers 14 may be connected to the same second circuit 16. In this way, compared with the setting method in which the shape memory alloy barbs 13 and the first circuit 15, or the conductive fibers 14 and the second circuit 16 are in one-to-one correspondence, the number of the first circuit 15 and the second circuit 16 can be reduced without changing the distribution and number of the shape memory alloy barbs 13 and the conductive fibers 14, so as to facilitate the design and production of the interface system and reduce the number of the first circuit 15 and the second circuit 16 that need to be controlled during use.

[0058] In some possible embodiments, multiple shape memory alloy barbs 13 and multiple first circuits 15 may be integrated in the same housing by injection molding, inlaying, etc., and multiple first circuits 15 may be connected in parallel to the same bus, and the line of each first circuit 15 can be regarded as a branch in the bus. Similarly, multiple conductive fibers 14 and multiple second circuits 16 may be integrated in the same housing by injection molding, inlaying, etc., and multiple second circuits 16 may be connected in parallel to the same bus, and the line of each second circuit 16 can be regarded as a branch in the bus. The buses corresponding to multiple first circuits 15 and the buses corresponding to multiple second circuits 16 may be connected to different electronic devices. In this way, when the first interface 11 and the second interface 12 are in contact and conduct, as Figure 1 shown in the interface system, it can be regarded as a charging cable or a data cable for use, and services such as data transmission or charging can be realized.

[0059] It can be understood that in the related art, for the interface and the wire connected to the interface, at least one branch connection line connected to the positive electrode of the electronic device (for providing positive voltage) and at least one branch connection line connected to the negative electrode (which can be regarded as grounding, the reference potential point) should be covered in the bus system to realize a current loop through the bus and ensure the smooth transmission of current and signals. For example, in a common charging cable, there are usually multiple wires, and two main wires respectively correspond to the positive electrode and the negative electrode, which are responsible for transmitting electricity. These wires are connected to the charging port of the electronic device through a specific interface to form a closed current loop, so that electrical energy can be effectively transmitted from the power source to the device interior to provide the required power for the device. In addition, some advanced charging cables may also include additional wires for transmitting data signals or realizing other specific services, which are not limited here.

[0060] Therefore, in some possible embodiments, when a power supply or an electronic device connected to a power supply is on one side of multiple first circuits 15, the method adopted in this application can control any one of the first circuits 15 to adjust the shape memory alloy barb 13 connected thereto to provide a positive voltage or a grounded state. It is also possible to control any one of the second circuits 16 to adjust the conductive fiber 14 connected thereto to receive a positive voltage or a grounded state.

[0061] In some possible embodiments, when a power supply or an electronic device connected to a power supply is on one side of multiple second circuits 16, the method adopted in this application can control any one of the second circuits 15 to adjust the conductive fiber 14 connected thereto to provide a positive voltage or a grounded state. It is also possible to control any one of the first circuits 15 to adjust the shape memory alloy barb 13 connected thereto to receive a positive voltage or a grounded state.

[0062] To control the states of the first circuit 15 and the corresponding shape memory alloy barb 13, and to control the states of the second circuit 16 and the corresponding conductive fiber 14. A structure of the first circuit 15 and the second circuit 16 will be described below.

[0063] Please refer to Figure 2a , Figure 2a which is a schematic structural diagram of a first circuit disclosed in an embodiment of this application; in the embodiment shown in Figure 2a , the shape memory alloy barbs 13 correspond to the first circuits 15 one by one, and each shape memory alloy barb 13 is uniquely connected to a first circuit 15. The first circuit 15 includes a sub-circuit 17 corresponding to the analog switch S1 and a sub-circuit 19 corresponding to the analog switch S2. Among them, the analog switch S1 in the sub-circuit 17 is connected to the power supply voltage (VCC, Voltage Common Collector). In this application, the VCC terminal can be the positive electrode of the power supply, the positive electrode of the electronic device, etc.; the analog switch S2 in the sub-circuit 19 is connected to the ground terminal (GND, Ground). In this application, the GND terminal can be the ground layer of the circuit board or the ground terminal of the electronic device, or can also refer to the point connected to the negative electrode of the power supply or the negative reference point of the electronic device, etc., which is not limited herein.

[0064] It should be noted that an analog switch can be used as a switching device in a signal link to selectively conduct or cut off a signal path by controlling its switch state. It utilizes the switching characteristics of semiconductor devices (such as MOS transistors) to achieve precise control of signals. In this application, the state of the shape memory alloy barb 13 connected to the first circuit 15 can be controlled by controlling the switch state of the module switch in the first circuit 15. Optionally, other electronic components, such as relays or transistors, etc., can be used to achieve the effect of controlling the state of the shape memory alloy barb 13 while changing the connection mode of the current in the first circuit 15, which is not limited herein.

[0065] In some possible embodiments, the first circuit 15 may also be as Figure 2b shown Figure 2b Another structural schematic diagram of the first circuit disclosed in the embodiments of the present application. Each first circuit 15 may be connected to multiple shape memory alloy barbs 13, but each shape memory alloy barb 13 can only be connected to one first circuit 15. In this way, the states of multiple shape memory alloy barbs 13 can be controlled by one first circuit 15.

[0066] In some possible embodiments, by controlling the switch states of the analog switches S1 and S2 in the first circuit 15, the shape memory alloy barb 13 can be made to present multiple states.

[0067] Exemplarily, when the analog switch S1 is closed and the analog switch S2 is open, the shape memory alloy barb 13 is connected to the VCC terminal; when the analog switch S1 is open and the analog switch S2 is closed, the shape memory alloy barb 13 is connected to the GND terminal; when both the analog switch S1 and S2 are open, the shape memory alloy barb 13 is in a high impedance state and no current will pass through.

[0068] Please refer to Figure 3a , Figure 3a A structural schematic diagram of the second circuit disclosed in the embodiments of the present application; in the embodiment shown as Figure 3a shown, the conductive fibers 14 correspond to the second circuits 16 one by one, and each conductive fiber 14 is uniquely connected to one second circuit 16. The second circuit 16 includes a sub-circuit 18 corresponding to the analog switch S3 and a sub-circuit 20 corresponding to the analog switch S4. Among them, the analog switch S3 in the sub-circuit 18 is connected to the power supply voltage (VCC, Voltage Common Collector). In the present application, the VCC terminal may be the positive electrode of the power supply, the positive electrode of the electronic device, etc.; the analog switch S4 in the sub-circuit 20 is connected to the ground terminal (GND, Ground). In the present application, the GND terminal may be the ground layer of the circuit board or the ground terminal of the electronic device, or may refer to the point connected to the negative electrode of the power supply or the negative reference point of the electronic device, etc., which is not limited herein.

[0069] In some possible embodiments, the second circuit 16 may also be as Figure 3b shown Figure 3b Another structural schematic diagram of the second circuit disclosed in the embodiments of the present application. Each second circuit 16 may be connected to multiple conductive fibers 14, but each conductive fiber 14 can only be connected to one second circuit 16. In this way, the states of multiple conductive fibers 14 can be controlled by one second circuit 16.

[0070] In some possible embodiments, by controlling the switching states of the analog switches S3 and S4 in the second circuit 16, the conductive fiber 14 can exhibit multiple states.

[0071] Exemplarily, when the analog switch S3 is closed and the analog switch S4 is open, the conductive fiber 14 is connected to the VCC terminal; when the analog switch S3 is open and the analog switch S4 is closed, the conductive fiber 14 is connected to the GND terminal; when both the analog switch S3 and S4 are open, the conductive fiber 14 is in a high-impedance state and no current will pass through.

[0072] The contact situation between the first interface and the second interface in the interface system of the present application will be described below. Herein, the contact between the first interface and the second interface means that when the two interfaces are in a separated state, through an external force, such as manual docking by the user or mechanical control docking method, multiple shape memory alloy barbs of the first interface and multiple conductive fibers of the second interface are deformed by extrusion, so that some of the shape memory alloy barbs and some of the conductive fibers are hooked together.

[0073] It should be noted that in the present application, when multiple first circuits and multiple second circuits are both disconnected from the corresponding shape memory alloy barbs or conductive fibers (referring to the situation where current cannot pass through in the circuit through switches and other means), the first interface and the second interface can still be fixed by the force generated by the hooking of the shape memory alloy barbs and the conductive fibers. And when multiple first circuits and multiple second circuits are both conductive to the corresponding shape memory alloy barbs or conductive fibers (including the situations of connecting to the VCC terminal and the GND terminal), by changing the magnitude of the flowing current, the temperature of some of the shape memory alloy barbs rises and deforms, thereby strengthening the connection of the second interface and the first interface.

[0074] In addition, in the present application, the materials of the shape memory alloy barbs and the conductive fibers can be selected according to actual performance requirements and cost budgets, and different shapes can also be set. For example, a spherical protrusion is provided at the end of the shape memory alloy barb to improve the fastening degree when the shape memory alloy barb is hooked with the conductive fiber, or soft and fine conductive fibers are selected to change the ease of contact and hooking between the shape memory alloy barb and the conductive fiber to generate a force, which is not limited herein.

[0075] Please refer to Figure 4 , Figure 4 which is a schematic structural diagram of the first interface and the second interface disclosed in the embodiment of the present application. When the first interface 11 is in physical contact with the second interface, they can be hooked together through the shape memory alloy barbs 13 or conductive fibers 14 provided thereon for data transmission, charging and other services.

[0076] In some possible embodiments, the interface areas of the first interface and the second interface are the same. When they are in contact, when the number of shape memory alloy barbs or conductive fibers that are successfully in contact (able to form a connection and transmit signals) in the overlapping area is greater than a preset threshold, subsequent operations such as data transmission or charging are performed. Therefore, even if the first interface and the second interface are not completely aligned, they can still be used normally, improving the usability of the interface system provided in this application, facilitating blind operation by users, and enhancing the user experience.

[0077] In some possible embodiments, the interface areas of the first interface and the second interface can be different. For example, the interface area of the first interface can be larger than that of the second interface, or the interface area of the second interface can be larger than that of the first interface. This is not limited herein, further improving the convenience when the user contacts the first interface with the second interface and enhancing the user experience.

[0078] It can be understood that when the first interface and the second interface are affected by external forces, such as object collision or vibration, it may cause the connection between some shape memory alloy barbs and conductive fibers to become loose, affecting the stability of the interface, and reducing the number of shape memory alloy barbs and conductive fibers that can conduct electricity, which may affect the performance of data transmission and charging operations. Therefore, this application discloses an interface fixing method that can control the conduction state of the shape memory alloy barbs and the corresponding first circuit, and control the conduction state of the conductive fibers and the corresponding second circuit, so as to tightly connect the first interface and the second interface, and strengthen the connection between the first interface and the second interface without the user's active intervention.

[0079] Please refer to Figure 5 , Figure 5 which is a schematic flowchart of an interface fixing method disclosed in an embodiment of this application. As Figure 5 shown, the method may include the following steps:

[0080] Step 501, when the first interface and the second interface are conducted through a plurality of shape memory alloy barbs and a plurality of conductive fibers, obtain a first number of target shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers among the plurality of shape memory alloy barbs.

[0081] In this application, the first interface and the second interface being conducted through a plurality of shape memory alloy barbs and a plurality of conductive fibers means that after the first interface and the second interface are fixed to each other through the mutual connection of a plurality of shape memory alloy barbs and a plurality of conductive fibers, they are in a state where charging and data transmission can be performed.

[0082] It can be understood that after the first interface and the second interface are connected together, there may still be some shape memory alloy barbs that do not contact any conductive fibers. These shape memory alloy barbs that do not contact any conductive fibers cannot play a role in the charging or data transmission process. If the number of such uncontacted shape memory alloy barbs is greater than a certain set threshold relative to the total number, it may affect the normal use of the interface system and reinforcement treatment is required to make as many shape memory alloy barbs as possible contact the conductive fibers.

[0083] In some embodiments, when the first interface and the second interface of the interface system are in contact and are first used to transmit electrical signals, it is possible to control some of the shape memory alloy barbs in the first interface to connect to the VCC terminal and some of the other shape memory alloy barbs to connect to the GND terminal, and determine whether the first interface and the second interface are conducting by detecting whether there is a voltage or current passing through the second interface.

[0084] Exemplarily, the charging device, such as an office power supply, a charger, etc., is connected to one side of a plurality of first circuits at the first interface, and the electrical device is connected to one side of a plurality of second circuits at the second interface. It is possible to confirm that the first interface and the second interface are conducting by detecting whether there is current or voltage input on the electrical device side. Next, subsequent steps can be implemented to obtain the first number of target shape memory alloy barbs.

[0085] In some possible embodiments, when the first interface and the second interface of the interface system are in contact and are first used to transmit electrical signals, it is also possible to control some of the conductive fibers in the second interface to connect to the VCC terminal and some of the other conductive fibers to connect to the GND terminal, and determine whether the first interface and the second interface are conducting by detecting whether there is a voltage or current passing through the first interface, which is not limited herein.

[0086] In some possible embodiments, the interface system includes a controller that can be configured to establish an electrical connection with a plurality of first circuits or a plurality of second circuits, that is, the controller can be set on either the first interface or the second interface. After the first interface and the second interface are in contact, the controller can control the connection state of the circuits in the other interface by wireless means, or by using some of the shape memory alloy barbs and some of the conductive fibers among the plurality of shape memory alloy barbs and the plurality of conductive fibers.

[0087] In some possible embodiments, a controller is respectively configured on one side of the first interface and a plurality of first circuits and on one side of the second interface and a plurality of second circuit controllers. Data can be mutually transmitted between the two controllers by wireless means, or through the partially contacted shape memory alloy barbs and conductive fibers to implement the method provided in the embodiments of the present application.

[0088] In some possible embodiments, the first interface of the interface system is electrically connected to multiple first circuits, or the second interface is electrically connected to multiple second circuits of different electronic devices. For ease of understanding, the electronic device to which the first interface is electrically connected to multiple first circuits is the first electronic device, and the electronic device to which the second interface is electrically connected to multiple second circuits is the second electronic device. When the first interface is in contact and conduction with the second interface, the connection states of the multiple first circuits and the multiple second circuits can be controlled by the processor of the first electronic device and / or the processor of the second electronic device, which is not limited herein.

[0089] In this application, it is necessary to obtain the first number of target shape memory alloy barbs that are in contact with any one of the multiple conductive fibers among the multiple shape memory alloy barbs, and determine the conduction quality when the first interface and the second interface are in conduction based on the magnitude of the first number. When the total number of shape memory alloy barbs remains unchanged, the larger the first number, the better the conduction quality between the first interface and the second interface, and the more stable the connection.

[0090] In some possible embodiments, the second interface can actively provide voltage through multiple second circuits to obtain the first number of target shape memory alloy barbs that are in contact with any one of the multiple conductive fibers. Before charging or data transmission using this interface system, each conductive fiber can be connected to the VCC terminal by controlling the multiple second circuits. Exemplarily, when the second circuit is as Figure 3a or Figure 3b shown, the analog switch S3 can be closed and the analog switch S4 can be opened so that each conductive fiber can provide a positive voltage.

[0091] Then, control each first circuit to be open-circuited with the corresponding shape memory alloy barb, so that each shape memory alloy barb is in a high-impedance state. Exemplarily, when the first circuit is as Figure 2a or Figure 2b shown, the analog switches S1 and S2 can be opened. Detect the voltage of each shape memory alloy barb one by one. If a certain shape memory alloy barb is detected to have a positive voltage, it is confirmed that the shape memory alloy barb is in contact with a certain conductive fiber of the second interface and is the target shape memory alloy barb. That is, during subsequent use, data transmission, charging, and other services can be carried out through this target shape memory alloy barb. After detecting the voltage of each shape memory alloy barb, the first number of target shape memory alloy barbs that are in contact with any one of the multiple conductive fibers can be determined.

[0092] It should be noted that in this application, electronic components such as voltage sensors can be provided at the first interface and / or the second interface to detect the voltage values of the multiple shape memory alloy barbs and / or the multiple conductive fibers, so as to confirm the conduction quality between the first interface and the second interface based on the voltage detection results and implement corresponding reinforcement measures.

[0093] In some possible embodiments, the first interface can actively provide voltage through a plurality of first circuits to obtain a first number of target shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers among the plurality of shape memory alloy barbs. Before charging or data transmission using this interface system, each shape memory alloy barb can be connected to the VCC terminal by controlling the plurality of first circuits. Exemplarily, when the first circuit is as Figure 2a or Figure 2b shown, the analog switch S1 can be closed and the analog switch S2 can be opened so that each shape memory alloy barb can provide a positive voltage.

[0094] Then, control each second circuit to be open-circuited with the corresponding conductive fiber so that each conductive fiber is in a high-impedance state. Exemplarily, when the second circuit is as Figure 3a or Figure 3b shown, the analog switches S3 and S4 can be opened. Detect the voltage of each conductive fiber one by one. If a certain conductive fiber is detected to have a positive voltage, it is confirmed that the conductive fiber is in contact with a certain shape memory alloy barb of the first interface and is the target conductive fiber. The shape memory alloy barb corresponding to the position of the first interface can be determined as the target shape memory alloy barb through the position of each target conductive fiber on the second interface, and then the first number of target shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers can be determined.

[0095] In some possible embodiments, during the use of the interface system, the conduction quality between the first interface and the second interface can also be detected regularly by testing the target shape memory alloy barbs in contact in a divided area manner, without limitation.

[0096] Step 502, when the first number is less than a preset first threshold, control at least some of the target shape memory alloy barbs among the target shape memory alloy barbs to be disconnected from the corresponding first circuits, and control the conductive fibers in contact with at least some of the target shape memory alloy barbs to be disconnected from the corresponding second circuits.

[0097] In the embodiments of the present application, when the first number is less than a preset first threshold, control at least some of the target shape memory alloy barbs among the target shape memory alloy barbs to be disconnected from the corresponding first circuits (configure the at least some of the target shape memory alloy barbs to be in a high-impedance state), and control the conductive fibers in contact with at least some of the target shape memory alloy barbs to be disconnected from the corresponding second circuits, so that the current of the remaining shape memory alloy barbs among the target shape memory alloy barbs increases, thereby deforming to increase the number of shape memory alloy barbs in contact with the plurality of conductive fibers among the plurality of shape memory alloy barbs.

[0098] In some possible embodiments, if the first number is greater than or equal to a preset first threshold, it means that the conduction effect between the first interface and the second interface is good and can be used normally without additional reinforcement.

[0099] It can be understood that when the first interface and the second interface in the present application are used for services such as charging or data transmission, in order to ensure the stable operation of the services, the total voltage and total current of the electronic equipment or charging and discharging device corresponding to both sides of the first interface and the second interface are usually relatively stable, and the electrical signal can be transmitted through the multiple target memory alloy barbs in the present application and the conductive fibers in contact. Each target memory alloy barb can be regarded as a branch in the electrical signal transmission bus, such as a wire in the charging line. When at least part of the target memory alloy barbs in the target memory alloy barbs are controlled to be disconnected from the corresponding first circuit, and the conductive fibers in contact with at least part of the target memory alloy barbs are controlled to be disconnected from the corresponding second circuit, the constant or change of the total current is less than the acceptable threshold, then the current passing through the remaining target memory alloy barbs will increase, according to the heat calculation formula:

[0100] Q=I 2 Rt,

[0101] Among them, Q is heat, I is current, R is resistance, and t is the power-on time.

[0102] Therefore, after controlling at least part of the target memory alloy barbs in the target memory alloy barbs to be disconnected from the corresponding first circuit, and controlling the conductive fibers in contact with at least part of the target memory alloy barbs to be disconnected from the corresponding second circuit, the current of the remaining memory alloy barbs in the target memory alloy barbs increases, and the heat generated in the same time increases. The remaining memory alloy barbs and part of the memory alloy barbs within a preset distance around them will heat up and cause deformation. In the present application, the memory alloy barbs will deform and shrink when the temperature reaches the preset temperature, so that the first interface and the second interface are shortened, thereby making some of the memory alloy barbs and the conductive fibers that were not originally in contact contact or become connected, thereby reinforcing the first interface and the second interface, and increasing the memory alloy barbs and conductive fibers that can transmit electrical signals (equivalent to adding a new branch in the bus), thereby improving the performance of data transmission or charging services.

[0103] In some possible embodiments, controlling at least part of the target memory alloy barbs to be disconnected from the corresponding first circuit includes:

[0104] Determining the disconnected number of the target memory alloy barbs according to the first number and the preset ratio;

[0105] At least part of the target memory alloy barbs whose number is controlled to be disconnected are disconnected from the corresponding first circuit.

[0106] Optionally, the preset ratio may be 30% or 40%, etc., which is not limited here, to ensure that the current passing through the residual memory alloy barb is increased to achieve the deformation effect without affecting the stable charging or data transmission service.

[0107] In some possible embodiments, controlling at least part of the target memory alloy barbs to be disconnected from the corresponding first circuit includes:

[0108] At least part of the target memory alloy barbs whose distance from the first interface is less than a preset distance threshold among the target memory alloy barbs are controlled to be disconnected from the corresponding first circuit.

[0109] In this way, by controlling the disconnection of some target memory alloy hooks near the center of the first interface, the remaining memory alloy hooks are concentrated in the area near the edge of the first interface, so that when the remaining memory alloy hooks are deformed due to temperature increase, the force is concentrated on one side of the edge of the first interface, thereby improving the reinforcement effect.

[0110] It should be noted that the memory alloy barbs provided in the embodiments of the present application need to ensure that the memory alloy barbs can be retracted after the temperature rises to a preset critical threshold, and the material can be a one-way shape memory alloy or a two-way shape memory alloy. Among them, the one-way shape memory alloy is a special alloy material that has the ability to remember its original shape in the high-temperature austenite phase. When the alloy is shaped or deformed in the low-temperature martensite phase and then heated to the high-temperature austenite phase, it will return to its original shape. The two-way shape memory effect refers to the ability of the alloy to remember and return to its original shape at high and low temperatures during heating and cooling. This effect requires certain training of the alloy to obtain, usually by repeatedly heating and cooling the alloy element under external stress. When the alloy is heated above a certain critical temperature, it will return to its original high-temperature shape; and when the alloy is cooled below a certain critical temperature, it will return to its original low-temperature shape. This process can be repeated, so that the alloy shows the ability of two-way shape memory.

[0111] By implementing the above technical solutions, when the reinforcement method provided by the present application enables conduction between the first interface and the second interface through a plurality of shape memory alloy barbs and a plurality of conductive fibers, the first number of target shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers can be obtained. When the obtained first number is less than a preset first threshold, it is confirmed that the number of target shape memory alloy barbs in contact with the conductive fibers is small, which may affect the data transmission performance or charging performance. At least some of the target shape memory alloy barbs in the target shape memory alloy barbs can be controlled to disconnect from the corresponding first circuit, and the conductive fibers in contact with at least some of the target shape memory alloy barbs in the target shape memory alloy barbs can be controlled to disconnect from the corresponding second circuit, so that the current passing through each of the remaining target shape memory alloy barbs increases, and then the temperature rises to generate deformation. The first interface and the second interface are pulled closer by the deformed remaining target shape memory alloy barbs to increase the number of shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with the plurality of conductive fibers, so as to firmly connect the first interface and the second interface.

[0112] In the present application, after the first interface and the second interface are reinforced, the reinforcement effect can be verified by detecting the number of successfully contacted shape memory alloy conductive fibers again.

[0113] Please refer to Figure 6 , Figure 6 which is another schematic flow chart of the interface fixing method disclosed in the embodiments of the present application. As Figure 6 shown, the method may include the following steps:

[0114] Step 601, when the first interface and the second interface are conducted through a plurality of shape memory alloy barbs and a plurality of conductive fibers, obtain the first number of target shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers.

[0115] In some embodiments. The conduction between the first interface and the second interface can form a loop among the first part of the target shape memory alloy barbs, the first part of the conductive fibers, the second part of the conductive fibers, and the second part of the target shape memory alloy barbs.

[0116] In some possible embodiments, the target shape memory alloy barbs include the first part of the target shape memory alloy barbs and the second part of the target shape memory alloy barbs, the difference in the number between the first part of the target shape memory alloy barbs and the second part of the target shape memory alloy barbs is less than a preset second threshold, the conductive fibers contacted by the first part of the target shape memory alloy barbs are the first part of the conductive fibers, and the conductive fibers contacted by the second part of the target shape memory alloy barbs are the second part of the conductive fibers. The method further includes:

[0117] The first circuit that controls the conduction of the first part of the shape memory alloy barbs provides a preset voltage, and the second circuit that controls the conduction of the first part of the conductive fibers receives the preset voltage. The second circuit that controls the conduction of the second part of the conductive fibers and the first circuit that controls the conduction of the second part of the shape memory alloy barbs are grounded, so that the first interface and the second interface are conducted.

[0118] It should be noted that during the use of the first interface and the second interface, the shape memory alloy barbs that successfully contact the conductive fibers can be divided into the first part of the shape memory alloy barbs and the second part of the shape memory alloy barbs. The difference in the number of these two parts of the shape memory alloy barbs should be less than a preset second threshold, so as to ensure that in the charging service, when the total current flowing out of one part of the shape memory alloy barbs is approximately the same as the total current flowing out of the other part of the shape memory alloy barbs (the difference is less than the preset fault tolerance threshold), the current passing through each shape memory alloy barb in the first part of the shape memory alloy barbs is approximately the same as the current passing through each shape memory alloy barb in the second part of the shape memory alloy barbs, avoiding uneven temperature of the shape memory alloy barbs and affecting the service performance.

[0119] Exemplarily, in multiple first circuits such as Figure 2a or Figure 2b shown, and multiple second circuits such as Figure 3a or Figure 3b shown, the first circuit that controls the conduction of the first part of the shape memory alloy barbs provides a preset voltage, the second circuit that controls the conduction of the first part of the conductive fibers receives the preset voltage, the second circuit that controls the conduction of the second part of the conductive fibers and the first circuit that controls the conduction of the second part of the shape memory alloy barbs are grounded, including:

[0120] The S1 analog switch of the first circuit that controls the conduction of the first part of the shape memory alloy barbs is closed, and the S2 analog switch is open; the S3 analog switch of the second circuit that controls the conduction of the first part of the conductive fibers is closed, and the S4 analog switch is open; the S3 analog switch of the second circuit that controls the conduction of the second part of the conductive fibers is open, and the S4 analog switch is closed; the S1 analog switch of the first circuit that controls the conduction of the second part of the shape memory alloy barbs is open, and the S2 analog switch is closed. After the first interface and the second interface are conducted, it can help the electronic devices on both sides of the interface system or implement services such as charging or data transmission in the charging or discharging state.

[0121] In some possible embodiments, the memory alloy barbs and conductive fibers other than the shape memory alloy barbs and the conductive fibers in contact with the shape memory alloy barbs are set to a short-circuit state (high impedance state) to ensure the accuracy of current control and signal transmission during use.

[0122] Step 602, when the first number is less than a preset first threshold, control at least some of the target shape memory alloy barbs in the target shape memory alloy barbs to disconnect from the corresponding first circuit, and control the conductive fibers in contact with at least some of the target shape memory alloy barbs to disconnect from the corresponding second circuit.

[0123] Step 603, obtain a second number of shape memory alloy barbs in contact with any one of the plurality of conductive fibers among the plurality of shape memory alloy barbs.

[0124] In some possible embodiments, the plurality of shape memory alloy barbs are two-way shape memory alloy barbs. When the temperature of the plurality of shape memory alloy barbs is less than or equal to a preset first temperature, the plurality of shape memory alloy barbs are in an extended state. When the temperature of the plurality of shape memory alloy barbs is greater than or equal to a preset second temperature, the plurality of shape memory alloy barbs are in a retracted state.

[0125] Please refer to Figure 7 , Figure 7 , which is a schematic diagram of the deformation of a shape memory alloy barb disclosed in the embodiment of the present application. When there is no external force acting on the shape memory alloy barb, if the temperature is greater than or equal to the preset second temperature (high temperature state), it presents the retracted state of the shape memory alloy barb a. If the temperature is less than or equal to the preset first temperature (low temperature state), it presents the expanded state of the shape memory alloy barb b.

[0126] Through the shape memory alloy barbs made of two-way shape memory alloy material, it is possible to ensure that by setting appropriate preset first temperature and preset second temperature during the processing, it can adapt to the working state of the interface system. And if the preset second temperature is set to room temperature, the shape memory alloy barbs can be automatically converted to the single-open state when the interface system is not in use, facilitating the user to separate the first interface and the second interface.

[0127] In some possible embodiments, after a preset waiting duration after controlling at least some of the target shape memory alloy barbs in the target shape memory alloy barbs to disconnect from the corresponding first circuit, and controlling the conductive fibers in contact with at least some of the target shape memory alloy barbs to disconnect from the corresponding second circuit, it is possible to detect again the second number of shape memory alloy barbs in contact with any one of the plurality of conductive fibers among the plurality of shape memory alloy barbs. The method of detecting the second number is the same as the method of detecting the first number, and will not be elaborated here.

[0128] Step 604, when the second number is greater than the first number, control at least some of the target shape memory alloy barbs to conduct with the corresponding first circuit, and control the conductive fibers in contact with at least some of the target shape memory alloy barbs to conduct with the corresponding second circuit.

[0129] In some possible embodiments, if the second number is greater than the first number, it indicates that the method of steps 601 and 602 plays a role in strengthening the first interface and the second interface, and at least some of the previously actively disconnected target shape memory alloy barbs can be restored to conduct with the corresponding first circuit, and the conductive fibers in contact with at least some of the actively disconnected target shape memory alloy barbs can be restored to conduct with the corresponding second circuit, so as to improve the performance of the interface system for charging or data transmission services.

[0130] In some possible embodiments, it may occur that the second number is greater than the first number, but the second number is still less than the preset first threshold. In this case, the reinforcement can be attempted again by controlling at least some of the target shape memory alloy barbs in the new target shape memory alloy barbs to disconnect from the corresponding first circuit, and controlling the conductive fibers in contact with at least some of the target shape memory alloy barbs to disconnect from the corresponding second circuit. Alternatively, a prompt message can be output to the user for the user to intervene and fix it, or the new target shape memory alloy barbs can still be used for the corresponding service, which is not limited here.

[0131] By implementing the above technical solution, after strengthening the first interface and the second interface, the reinforcement effect is detected by obtaining the second number of the shape memory alloy barbs in contact with any one of the plurality of conductive fibers among the plurality of shape memory alloy barbs. If the expected effect is achieved, at least some of the previously actively disconnected target shape memory alloy barbs are restored to conduct with the corresponding first circuit, and the conductive fibers in contact with at least some of the actively disconnected target shape memory alloy barbs are restored to conduct with the corresponding second circuit, so as to increase the number of branches in the bus, improve the performance of the interface system for charging or data transmission services, and prevent the reduction of the successfully contacted target shape memory alloy barbs after the strengthening process, thereby avoiding the safety risks that may be caused by excessive temperature.

[0132] Please refer Figure 8 , Figure 8 to another schematic flowchart of the interface fixing method disclosed in the embodiments of the present application. As Figure 8 shown, the method may include the following steps:

[0133] Step 801, controlling the first circuit in which the first part of the shape memory alloy barbs is conductive to provide a preset voltage, controlling the first circuit in which the second part of the shape memory alloy barbs is conductive to be grounded, and controlling the plurality of conductive fibers to disconnect from the corresponding second circuit.

[0134] In some possible embodiments, the plurality of shape memory alloy barbs include a first part of shape memory alloy barbs and a second part of shape memory alloy barbs, and the difference in the number between the first part of shape memory alloy barbs and the second part of shape memory alloy barbs is less than a preset third threshold. Before obtaining the first number of the target shape memory alloy barbs in contact with any one of the plurality of conductive fibers among the plurality of shape memory alloy barbs, the method further includes:

[0135] The first circuit that controls the conduction of the first part of the shape memory alloy barbs provides a preset voltage, and the first circuit that controls the conduction of the second part of the shape memory alloy barbs is grounded. The multiple conductive fibers are controlled to be disconnected from the corresponding second circuits, so that some of the shape memory alloy barbs in the first part of the shape memory alloy barbs are conducted through the multiple conductive fibers to some of the shape memory alloy barbs in the second part of the shape memory alloy barbs, thereby causing some of the shape memory alloy barbs in the first part of the shape memory alloy barbs and some of the shape memory alloy barbs in the second part of the shape memory alloy barbs to deform, so as to increase the number of the shape memory alloy barbs in contact with the multiple conductive fibers.

[0136] It should be noted that in addition to dividing the target shape memory alloy barbs that are successfully contacted by the conductive fibers, in some embodiments, before determining the target shape memory alloy barbs, for example, when the user first contacts and powers on the first interface and the second interface. The multiple shape memory alloy barbs can include a first part of the shape memory alloy barbs and a second part of the shape memory alloy barbs, and the difference in the number of the shape memory alloy barbs in the two parts is less than a preset third threshold.

[0137] By controlling the first circuit that controls the conduction of the first part of the shape memory alloy barbs to provide a preset voltage, grounding the first circuit that controls the conduction of the second part of the shape memory alloy barbs, and controlling the multiple conductive fibers to be disconnected from the corresponding second circuits, it is possible to make some of the shape memory alloy barbs in the first part of the shape memory alloy barbs and the second part of the shape memory alloy barbs conduct and short-circuit through the conductive fibers set to a high impedance state (such as both the analog switches S3 and S4 are disconnected), and then the first part of the shape memory alloy barbs and the second part of the shape memory alloy barbs that have a short circuit heat up, generating a force to tighten the first interface and the second interface. In this way, when the user uses the first interface and the second interface, there is no need to press hard, and the stable connection between the first interface and the second interface can be achieved, improving the user experience.

[0138] It should be noted that in order to achieve a short circuit between any one of the shape memory alloy barbs in the first part of the shape memory alloy barbs and any one of the shape memory alloy barbs in the second part of the shape memory alloy barbs, it is necessary to make at least two shape memory alloy barbs contact the same conductive fiber, or at least two shape memory alloy barbs contact a conductive fiber cluster including at least two electrically connected conductive fibers (for example Figure 3b as shown, the multiple conductive fibers connected to the same second circuit are also connected to each other), or at least two shape memory alloy barbs contact at least two mutually hooked conductive fibers, which is not limited here.

[0139] In some possible embodiments, the adjacent shape memory alloy barbs can be divided into different parts, such as the first part of the shape memory alloy barbs or the second part of the shape memory alloy barbs, to increase the number of shape memory alloy barbs that short-circuit between the first part of the shape memory alloy barbs and the second part of the shape memory alloy barbs, ensure the firm connection between the first interface and the second interface, and guarantee the conduction quality in subsequent use.

[0140] In some possible embodiments, such as Figure 3b As shown, a second circuit is connected to a conductive fiber cluster, and the multiple conductive fibers included in the conductive fiber cluster are interconnected with each other, so that some of the shape memory alloy barbs in the first part of the shape memory alloy barbs and some of the shape memory alloy barbs in the second part of the shape memory alloy barbs are deformed due to short circuit, thereby realizing the reinforcement between the first interface and the second interface.

[0141] In some possible embodiments, the conductive fiber clusters connected by each second circuit may include multiple conductive fibers, for example, matrix specifications such as 5×5, 7×7, or 9×9, and connect multiple shape memory alloy barbs to the same conductive fiber cluster to simplify the complexity of circuit control and improve the response of the reinforcement process.

[0142] In some possible embodiments, when a first circuit is connected to multiple shape memory alloy barbs, the multiple shape memory alloy barbs can be in matrix specifications such as 5×5, 7×7, or 9×9, which is not limited herein.

[0143] It should be noted that when a first circuit is connected to multiple shape memory alloy barbs and a second circuit is connected to multiple conductive fibers, the number of shape memory alloy barbs connected by each first circuit and the number of conductive fibers connected by each second circuit can be the same or different, which is not limited herein.

[0144] In some possible embodiments, after controlling the disconnection of multiple conductive fibers from the corresponding second circuits, the method further includes:

[0145] Obtaining a third number of shape memory alloy barbs in the first part of the shape memory alloy barbs that are conductive to the second part of the shape memory alloy barbs;

[0146] When the third number is less than a preset fourth threshold, output a prompt message, where the prompt message is used to prompt that the first interface and the second interface are in poor contact.

[0147] After strengthening the first interface and the second interface by controlling the connection state between the first part of the shape memory alloy barbs and the second part of the shape memory alloy barbs, the third number of shape memory alloy barbs in the first part of the shape memory alloy barbs that are electrically connected to the second part of the shape memory alloy barbs can be obtained. The third number of short circuits in the first part of the shape memory alloy barbs can be obtained. If the detected third number is lower than the preset fourth threshold, it means that the connection between the first interface and the second interface may not be tight or stable enough, and there is a risk of poor contact. Output a prompt message indicating the possible poor contact problem between the first interface and the second interface. This prompt not only helps to detect potential connection failures in a timely manner but also guides the user to take corresponding corrective measures, such as readjusting the interface position or checking whether there are foreign objects on the interface surface, so as to ensure a reliable and stable connection between the interfaces.

[0148] Step 802: When the first interface and the second interface are electrically connected through a plurality of shape memory alloy barbs and a plurality of conductive fibers, obtain the first number of target shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers.

[0149] Step 803: When the first number is less than the preset first threshold, control at least some of the target shape memory alloy barbs in the target shape memory alloy barbs to disconnect from the corresponding first circuit, and control the conductive fibers in contact with at least some of the target shape memory alloy barbs to disconnect from the corresponding second circuit.

[0150] Step 804: Obtain the second number of shape memory alloy barbs in the plurality of shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers.

[0151] Step 805: When the second number is greater than the first number, control at least some of the target shape memory alloy barbs to conduct with the corresponding first circuit, and control the conductive fibers in contact with at least some of the target shape memory alloy barbs to conduct with the corresponding second circuit.

[0152] In the above technical solution, by utilizing the deformation characteristics of the shape memory alloy barbs, a preset voltage is provided to the first circuit in which the first part of the shape memory alloy barbs is electrically connected, the first circuit in which the second part of the shape memory alloy barbs is electrically connected is grounded, and the plurality of conductive fibers are disconnected from the corresponding second circuits, so that some of the shape memory alloy barbs in the first part of the shape memory alloy barbs are electrically connected to some of the shape memory alloy barbs in the second part of the shape memory alloy barbs through the plurality of conductive fibers, realizing the automatic strengthening of the interface, improving the stability of the connection, and being able to detect the number of electrically connected shape memory alloy barbs and output a prompt message in a timely manner accordingly, so that the user can discover and handle potential poor contact problems, significantly improving the reliability of the interface system and the user experience.

[0153] In the interface fixing method provided in this application, determining the target shape memory alloy barb in contact with the electric fiber is the basis for subsequent reinforcement processing. In addition to the method for determining the target shape memory alloy barb mentioned in step 501, another method for determining the target shape memory alloy barb will be described below.

[0154] Figure 9 FIG. is a schematic flow chart of a method for determining a target shape memory alloy barb disclosed in an embodiment of this application. As Figure 9 shown, it may include the following steps:

[0155] Step 901: Control each first circuit connected to a shape memory alloy barb to provide a preset voltage one by one, control the first circuits corresponding to other shape memory alloy barbs to be disconnected, control the second circuits corresponding to multiple conductive fibers to be disconnected, detect the voltage values of other shape memory alloy barbs, and divide the shape memory alloy barbs with voltage values greater than the preset voltage threshold among other shape memory alloy barbs and the shape memory alloy barbs whose first circuits providing the preset voltage are conducted into the same interconnection block.

[0156] Exemplarily, Figure 10 FIG. is another schematic structural diagram of a first interface and a second interface disclosed in an embodiment of this application. As Figure 10 shown, if the first interface has 30 shape memory alloy barbs, and each shape memory alloy barb is connected to a first circuit ( Figure 10 not shown in), the shape memory alloy barbs can be numbered 1-30. Control each first circuit connected to a shape memory alloy barb to provide a preset voltage one by one. Starting from shape memory alloy barb 1, control the first circuit to provide a preset voltage. For example, when the first circuit is as Figure 2a or Figure 2b shown, control the analog switch S1 of the first circuit of shape memory alloy barb 1 to close and the analog switch S2 to open. At this time, disconnect the first circuits corresponding to shape memory alloy barbs numbered 2-30. For example, control the analog switches S1 and S2 of the first circuits of shape memory alloy barbs 2-30 to be disconnected, and control the second circuits corresponding to multiple conductive fibers to be disconnected. For example, control the analog switches S3 and S4 of the second circuits corresponding to multiple conductive fibers to be disconnected. At this time, detect the voltage values of shape memory alloy barbs 2-30. If there is a shape memory alloy barb with a voltage value greater than the preset voltage threshold, it means that the shape memory alloy barb with a voltage value greater than the preset voltage threshold can be conducted with shape memory alloy barb 1 through multiple conductive fibers. It can be recorded that shape memory alloy barb 1 and the shape memory alloy barb with a voltage value greater than the preset voltage threshold are divided into the same interconnection block, such as interconnection block 1.

[0157] It should be noted that, in order to improve the detection efficiency, in some possible embodiments, for the shape memory alloy barbs that have been divided into interconnected blocks, there is no need to provide a preset voltage to the first circuit corresponding to controlling them, the first circuits corresponding to controlling other shape memory alloy barbs are disconnected, the second circuits corresponding to controlling a plurality of conductive fibers are disconnected, and the step of detecting the voltage values of other shape memory alloy barbs.

[0158] Exemplarily, when controlling the first circuit corresponding to the shape memory alloy barb 1 to provide a preset voltage, if the obtained interconnected block 1 includes the shape memory alloy barb 1, the shape memory alloy barb 2, the shape memory alloy barb 7, and the shape memory alloy barb 8, then in the subsequent detection process, there is no need to re-control the first circuits corresponding to the shape memory alloy barbs 2, 7, and 8 to provide a preset voltage, control the first circuits corresponding to controlling other shape memory alloy barbs to be disconnected, control the second circuits corresponding to a plurality of conductive fibers to be disconnected, and the step of detecting the voltage values of other shape memory alloy barbs.

[0159] It should be noted that, in order to increase the possibility that a plurality of shape memory alloy barbs can be electrically connected to each other through conductive fibers, a plurality of conductive fibers of the second interface can be set to form a conductive fiber cluster in a matrix specification such as 5×5, 7×7, or 9×9, and one conductive fiber cluster is connected to one second circuit.

[0160] Exemplarily, as Figure 10 shown, the conductive fiber cluster 22 includes four conductive fibers, and these four conductive fibers are all connected to the same second circuit. When the first interface contacts the second interface, a plurality of shape memory alloy barbs can contact the conductive fiber cluster 22 and be divided into the same interconnected block. For example, in some embodiments, as Figure 10 shown, the four shape memory alloy barbs included in the shape memory alloy barb region 21 are divided into the same interconnected block.

[0161] Step 902, determining at least two interconnected blocks corresponding to a plurality of shape memory alloy barbs to determine target shape memory alloy barbs.

[0162] In some possible embodiments, at least two interconnected blocks corresponding to a plurality of shape memory alloy barbs are determined, and all the shape memory alloy barbs in these at least two interconnected blocks can contact conductive fibers. Therefore, the shape memory alloy barbs in these interconnected blocks can be determined as target shape memory alloy barbs.

[0163] In some possible embodiments, according to the number of shape memory alloy barbs in each interconnected block, the at least two interconnected blocks are divided into at least one first interconnected block and at least one second interconnected block, the shape memory alloy barbs in the at least one first interconnected block are the first part of the target shape memory alloy barbs, and the shape memory alloy barbs in the at least one second interconnected block are the second part of the target shape memory alloy barbs.

[0164] It should be noted that in the present application, the normal progress of the charging or data transmission service can be ensured by making the difference in the number of the first part of the target shape memory alloy barbs and the second part of the target shape memory alloy barbs less than a preset second threshold.

[0165] Exemplarily, in some possible embodiments, through step 901, five interconnected blocks are determined, namely interconnected blocks 1-5. Among them, interconnected block 1 includes five shape memory alloy barbs, interconnected block 2 includes seven shape memory alloy barbs, interconnected block 3 includes six shape memory alloy barbs, interconnected block 4 includes four shape memory alloy barbs, and interconnected block 5 includes five shape memory alloy barbs. Three interconnected blocks, namely interconnected blocks 1, 4, and 5, can be divided into a first interconnected block, which can be numbered as the first interconnected block 1-3, by a preset algorithm such as dynamic programming or greedy algorithm. Two interconnected blocks, namely interconnected blocks 2 and 3, can be divided into a second interconnected block, which can be numbered as the second interconnected block 1-2. The first interconnected block 1-3 after division includes 14 shape memory alloy barbs, which are the first part of the target shape memory alloy barbs. The second interconnected block 1-2 after division includes 13 shape memory alloy barbs, which are the second part of the target shape memory alloy barbs. So that the difference in the number of the first part of the target shape memory alloy barbs and the second part of the target shape memory alloy barbs is less than a preset second threshold. And during subsequent reinforcement processing, at least some of the target shape memory alloy barbs in the target shape memory alloy barbs are controlled to be disconnected from the corresponding first circuit, with the interconnected block as the minimum unit, to improve the reinforcement processing efficiency and processing complexity.

[0166] In some possible embodiments, after determining at least two interconnected blocks corresponding to a plurality of shape memory alloy barbs, the method further includes:

[0167] Controlling a first circuit connected to the shape memory alloy barbs of each first interconnected block to provide a preset voltage, controlling a first circuit connected to the shape memory alloy barbs of each second interconnected block to be grounded, and controlling a second circuit corresponding to a plurality of conductive fibers to be disconnected;

[0168] Detecting the voltage values of each conductive fiber, controlling the second circuit corresponding to the conductive fiber with a voltage value greater than or equal to a preset voltage threshold to be turned on and receive a preset voltage, and controlling the second circuit corresponding to the conductive fiber with a voltage value less than the preset voltage threshold to be turned on and grounded, so that the first interface and the second interface are turned on.

[0169] It can be understood that after determining the first interconnection block and the second interconnection block, the state of the first circuit to which each shape memory alloy barb in each interconnection block is connected can be controlled to make the shape memory alloy barb connect to the VCC terminal to provide a preset voltage or connect to the GND terminal to be grounded. Then, control the second circuits corresponding to the plurality of conductive fibers to be disconnected. For example, disconnect both the analog switches S3 and S4, detect the voltage values of the respective conductive fibers at this time, control the second circuits corresponding to the conductive fibers with voltage values greater than or equal to the preset voltage threshold to be turned on and receive the preset voltage. For example, control the analog switch S3 to be closed and S4 to be open. And control the second circuits corresponding to the conductive fibers with voltage values less than the preset voltage threshold to be turned on and grounded. For example, control the analog switch S3 to be open and S4 to be closed. A loop is formed between the first interface and the second interface to achieve conduction between the interfaces.

[0170] By implementing the above technical solution, it is possible to determine the target shape memory alloy barbs in contact with the conductive fibers and divide the interconnection blocks, improving the processing efficiency of strengthening the first interface and the second interface.

[0171] It should be understood that although the steps in the above flowcharts are shown in sequence according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise clearly stated in this article, the execution of these steps has no strict order limit, and these steps can be executed in other orders. Moreover, at least a part of the steps in the above flowcharts may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be executed alternately or alternately with at least a part of other steps or sub-steps or stages of other steps.

[0172] Based on the foregoing embodiments, an embodiment of the present application provides an interface system. The system includes the respective units included and can be implemented by a processor; of course, it can also be implemented by specific logic circuits; during implementation, the processor can be a central processing unit (CPU), a microprocessor (MPU), a digital signal processor (DSP), or a field programmable gate array (FPGA), etc.

[0173] Figure 11 FIG. is a schematic structural diagram of the interface system provided by the embodiment of the present application. As Figure 11 shown, the interface system includes a first interface, a second interface, a plurality of first circuits, and a plurality of second circuits. The first interface includes a plurality of shape memory alloy barbs, each shape memory alloy barb is connected to a first circuit, the second interface includes a plurality of conductive fibers, each conductive fiber is connected to a second circuit, and includes a detection unit 1101 and a reinforcement unit 1102, wherein:

[0174] The detection unit 1101 is configured to obtain a first number of target shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers among the plurality of shape memory alloy barbs when the first interface and the second interface are electrically connected through the plurality of shape memory alloy barbs and the plurality of conductive fibers.

[0175] The reinforcement unit 1102 is configured to, when the first number is less than a preset first threshold, control at least some of the target shape memory alloy barbs among the target shape memory alloy barbs to disconnect from the corresponding first circuit, and control the conductive fibers in contact with at least some of the target shape memory alloy barbs to disconnect from the corresponding second circuit, so as to increase the current of the remaining shape memory alloy barbs among the target shape memory alloy barbs, thereby causing deformation to increase the number of shape memory alloy barbs in contact with the plurality of conductive fibers among the plurality of shape memory alloy barbs.

[0176] In some possible embodiments, the interface system further includes a conduction control unit. The plurality of shape memory alloy barbs are two-way shape memory alloy barbs. When the temperature of the plurality of shape memory alloy barbs is less than or equal to a preset first temperature, the plurality of shape memory alloy barbs are in an extended state. When the temperature of the plurality of shape memory alloy barbs is greater than or equal to a preset second temperature, the plurality of shape memory alloy barbs are in a retracted state. After controlling the conductive fibers in contact with at least some of the target shape memory alloy barbs to disconnect from the corresponding second circuit, the conduction control unit is configured to obtain a second number of shape memory alloy barbs that are in contact with any one of the plurality of conductive fibers among the plurality of shape memory alloy barbs. When the second number is greater than the first number, control at least some of the target shape memory alloy barbs to conduct with the corresponding first circuit, and control the conductive fibers in contact with at least some of the target shape memory alloy barbs to conduct with the corresponding second circuit.

[0177] In some possible embodiments, the target shape memory alloy barbs include a first part of target shape memory alloy barbs and a second part of target shape memory alloy barbs. The difference in the number between the first part of target shape memory alloy barbs and the second part of target shape memory alloy barbs is less than a preset second threshold. The conductive fibers in contact with the first part of target shape memory alloy barbs are first part of conductive fibers, and the conductive fibers in contact with the second part of target shape memory alloy barbs are second part of conductive fibers. The conduction control unit is further configured to supply a preset voltage to the first circuit in which the first part of target shape memory alloy barbs are conductive, receive the preset voltage by the second circuit in which the first part of conductive fibers are conductive, and ground the second circuit in which the second part of conductive fibers are conductive and the first circuit in which the second part of target shape memory alloy barbs are conductive, so as to electrically connect the first interface and the second interface.

[0178] In some possible embodiments, the plurality of shape memory alloy barbs include a first part of shape memory alloy barbs and a second part of shape memory alloy barbs. The difference in the number between the first part of shape memory alloy barbs and the second part of shape memory alloy barbs is less than a preset third threshold. The reinforcement unit 1102 is further configured to provide a preset voltage to a first circuit for controlling the conduction of the first part of shape memory alloy barbs, ground a first circuit for controlling the conduction of the second part of shape memory alloy barbs, and control the plurality of conductive fibers to be disconnected from the corresponding second circuit, so that some of the shape memory alloy barbs in the first part of shape memory alloy barbs are conducted through the plurality of conductive fibers with some of the shape memory alloy barbs in the second part of shape memory alloy barbs, thereby causing some of the shape memory alloy barbs in the first part of shape memory alloy barbs and some of the shape memory alloy barbs in the second part of shape memory alloy barbs to deform, so as to increase the number of the plurality of shape memory alloy barbs in contact with the plurality of conductive fibers.

[0179] In some possible embodiments, the interface system further includes a prompting unit, configured to obtain a third number of shape memory alloy barbs in the first part of shape memory alloy barbs that are conducted with the second part of shape memory alloy barbs; and output a prompting message when the third number is less than a preset fourth threshold, where the prompting message is used to prompt that the contact between the first interface and the second interface is poor.

[0180] In some possible embodiments, the detection unit 1101 is further configured to control, one by one, a first circuit connected to each shape memory alloy barb to provide a preset voltage, control the first circuits corresponding to the other shape memory alloy barbs to be disconnected, control the second circuits corresponding to the plurality of conductive fibers to be disconnected, detect the voltage values of the other shape memory alloy barbs, and classify the shape memory alloy barbs with voltage values greater than the preset voltage threshold among the other shape memory alloy barbs and the shape memory alloy barbs whose first circuits providing the preset voltage are conducted into the same interconnected block; and determine at least two interconnected blocks corresponding to the plurality of shape memory alloy barbs to determine the target shape memory alloy barbs.

[0181] In some possible embodiments, the detection unit 1101 is further configured to divide at least two interconnected blocks into at least one first interconnected block and at least one second interconnected block according to the number of shape memory alloy barbs in each interconnected block, where the shape memory alloy barbs in at least one first interconnected block are the first part of target shape memory alloy barbs, and the shape memory alloy barbs in at least one second interconnected block are the second part of target shape memory alloy barbs.

[0182] In some possible embodiments, the conduction control unit is further configured to control a first circuit connected to the shape memory alloy barbs of each first interconnection block to provide a preset voltage, control a first circuit connected to the shape memory alloy barbs of each second interconnection block to be grounded, and control a second circuit corresponding to a plurality of conductive fibers to be disconnected; detect voltage values of the respective conductive fibers, control the second circuit corresponding to a conductive fiber with a voltage value greater than or equal to a preset voltage threshold to be conducted and receive the preset voltage, and control the second circuit corresponding to a conductive fiber with a voltage value less than the preset voltage threshold to be conducted and grounded, so as to conduct the first interface and the second interface.

[0183] The description of the above device embodiments is similar to that of the above method embodiments and has similar beneficial effects to those of the method embodiments. For technical details not disclosed in the device embodiments of the present application, please refer to the description of the method embodiments of the present application for understanding.

[0184] It should be noted that in the embodiments of the present application Figure 11 The division of units in the interface system shown is illustrative and is only a logical service division. In actual implementation, there may be other division methods. In addition, in each embodiment of the present application, each service unit may be integrated in a processing unit, may exist separately physically, or two or more units may be integrated in one unit. The above integrated unit may be implemented in the form of hardware, may also be implemented in the form of a software service unit, or may be implemented in a form combining software and hardware.

[0185] It should be noted that in the embodiments of the present application, if the above method is implemented in the form of a software service module and sold or used as an independent product, it may also be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the embodiments of the present application, in essence, or the part that contributes to the related technology, may be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for causing an electronic device to execute all or part of the methods described in the embodiments of the present application. The foregoing storage medium includes: various media such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a magnetic disk, or an optical disc that can store program codes. In this way, the embodiments of the present application are not limited to any specific combination of hardware and software.

[0186] The embodiments of the present application provide a computer device, which may be a server, and its internal structure diagram may be as Figure 12As shown in the figure. The computer device includes a processor, a memory, and a network interface connected via a system bus. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store data. The network interface of the computer device is used to communicate with an external terminal via a network connection. When the computer program is executed by the processor, the above method is implemented.

[0187] An embodiment of the present application provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps in the method provided in the above embodiment are implemented.

[0188] An embodiment of the present application provides a computer program product containing instructions. When it runs on a computer, it causes the computer to execute the steps in the method provided in the above method embodiment.

[0189] Those skilled in the art can understand that Figure 12 the structure shown in the figure is only a block diagram of some structures related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine some components, or have a different component layout.

[0190] In one embodiment, the interface system provided by the present application can be implemented in the form of a computer program, and the computer program can run on a computer device such as Figure 12 shown in the figure. Each program module constituting the above system can be stored in the memory of the computer device. The computer program constituted by each program module causes the processor to execute the steps in the methods of the various embodiments of the present application described in this specification.

[0191] It should be pointed out here that: the descriptions of the above storage medium and device embodiments are similar to the descriptions of the above method embodiments, and have beneficial effects similar to those of the method embodiments. For the technical details not disclosed in the storage medium, storage medium and device embodiments of the present application, please refer to the descriptions of the method embodiments of the present application for understanding.

[0192] It should be understood that the "one embodiment" or "an embodiment" or "some embodiments" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, the appearances of "in one embodiment" or "in an embodiment" or "in some embodiments" throughout the specification do not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in various embodiments of the present application, the magnitude of the serial numbers of the above processes does not mean the sequence of execution, and the execution sequence of each process should be determined according to its business and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The serial numbers of the embodiments of the present application above are only for description and do not represent the advantages or disadvantages of the embodiments. The descriptions of the above embodiments tend to emphasize the differences between the embodiments, and their similarities or similarities can be referred to each other. For the sake of brevity, they will not be elaborated herein.

[0193] As used herein, the term "and / or" is merely a description of the association relationship of associated objects, indicating that there can be three relationships, for example, object A and / or object B can represent: object A exists alone, object A and object B exist simultaneously, and object B exists alone.

[0194] It should be noted that, as used herein, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising a..." does not exclude the existence of additional identical elements in the process, method, article or device comprising such element.

[0195] In several embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The above-described embodiments are merely illustrative. For example, the division of the modules is only a logical business division, and there can be other division methods in actual implementation, such as: multiple modules or components can be combined, or can be integrated into another system, or some features can be ignored, or not executed. In addition, the coupling, direct coupling or communication connection between the components shown or discussed with each other can be through some interfaces, and the indirect coupling or communication connection of the devices or modules can be electrical, mechanical or other forms.

[0196] The modules described above as separate components may or may not be physically separated, and the components shown as modules may or may not be physical modules; they may be located in one place or distributed across multiple network elements; some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0197] In addition, in each embodiment of this application, all service modules may be integrated in one processing unit, or each module may be a separate unit, or two or more modules may be integrated in one unit; the above integrated modules may be implemented in the form of hardware or in the form of hardware plus software service units.

[0198] Those of ordinary skill in the art can understand that all or part of the steps to implement the above method embodiments can be completed by hardware related to program instructions. The foregoing program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps including the above method embodiments; and the foregoing storage medium includes: removable storage devices, read-only memory (ROM), magnetic disks, or optical disks and other various media that can store program codes.

[0199] Alternatively, if the above integrated unit of this application is implemented in the form of a software service module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the embodiments of this application essentially or the part that contributes to the related technology can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to enable an electronic device to execute all or part of the methods described in various embodiments of this application. And the foregoing storage medium includes: removable storage devices, ROM, magnetic disks, or optical disks and other various media that can store program codes.

[0200] The methods disclosed in several method embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments.

[0201] The features disclosed in several product embodiments provided in this application can be arbitrarily combined without conflict to obtain new product embodiments.

[0202] The features disclosed in several method or device embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments or device embodiments.

[0203] As described above, it is only the implementation mode of this application, but the protection scope of this application is not limited thereto. Any person skilled in the art within the technical scope disclosed by this application can easily think of changes or substitutions, which should all be covered within the protection scope of this application. Therefore, the protection scope of this application shall be subject to the protection scope of the claimed rights.

Claims

1. An interface fixing method, characterized in that: The method is applied to an interface system, the interface system comprising a first interface, a second interface, a plurality of first circuits, and a plurality of second circuits, the first interface comprising a plurality of memory alloy barbs, each memory alloy barb being connected to a first circuit, the second interface comprising a plurality of conductive fibers, each conductive fiber being connected to a second circuit, the method comprising: When the first interface and the second interface are connected through the plurality of memory alloy barbs and the plurality of conductive fibers, obtaining a first number of target memory alloy barbs in the plurality of memory alloy barbs that are in contact with any conductive fiber among the plurality of conductive fibers; In the case where the first number is less than a preset first threshold, at least part of the target memory alloy barbs are controlled to be disconnected from the corresponding first circuit, and the conductive fibers in contact with at least part of the target memory alloy barbs are controlled to be disconnected from the corresponding second circuit, so that the current of the remaining memory alloy barbs in the target memory alloy barbs is increased, thereby generating deformation, so as to increase the number of memory alloy barbs in contact with the multiple conductive fibers among the multiple memory alloy barbs.

2. The method according to claim 1, characterized in that: The plurality of memory alloy barbs are two-way morphological memory alloy barbs. When the temperature of the plurality of memory alloy barbs is less than or equal to a preset first temperature, the plurality of memory alloy barbs are in an extended state. When the temperature of the plurality of memory alloy barbs is greater than or equal to a preset second temperature, the plurality of memory alloy barbs are in a retracted state. After controlling the conductive fiber in contact with at least part of the target memory alloy barbs to be disconnected from the corresponding second circuit, the method further includes: Obtaining a second number of the plurality of memory alloy barbs, which are in contact with any one of the plurality of conductive fibers; When the second number is greater than the first number, at least part of the target memory alloy barbs are controlled to be connected to the corresponding first circuit, and the conductive fibers contacting at least part of the target memory alloy barbs are controlled to be connected to the corresponding second circuit.

3. The method according to claim 1 or 2, characterized in that: The target memory alloy barbs include a first part of target memory alloy barbs and a second part of target memory alloy barbs, the difference in number between the first part of target memory alloy barbs and the second part of target memory alloy barbs is less than a preset second threshold, the conductive fibers contacted by the first part of target memory alloy barbs are the first part of conductive fibers, and the conductive fibers contacted by the second part of target memory alloy barbs are the second part of conductive fibers, and the method further includes: The first circuit controlling the first part of the target memory alloy barb to be turned on provides a preset voltage, the second circuit controlling the first part of the conductive fiber to be turned on receives the preset voltage, the second circuit controlling the second part of the conductive fiber to be turned on and the first circuit controlling the second part of the target memory alloy barb to be turned on are grounded, so that the first interface and the second interface are turned on.

4. The method according to claim 1 or 2, characterized in that: The plurality of memory alloy barbs include a first portion of memory alloy barbs and a second portion of memory alloy barbs, the difference in number between the first portion of memory alloy barbs and the second portion of memory alloy barbs is less than a preset third threshold, and in the step of obtaining the plurality of memory alloy barbs, before the first number of target memory alloy barbs in contact with any conductive fiber of the plurality of conductive fibers, the method further includes: The first circuit for controlling the first part of the memory alloy barbs to be turned on provides a preset voltage, the first circuit for controlling the second part of the memory alloy barbs to be turned on is grounded, and the plurality of conductive fibers are controlled to be disconnected from the corresponding second circuit, so that some of the memory alloy barbs in the first part of the memory alloy barbs are turned on with some of the memory alloy barbs in the second part of the memory alloy barbs through the plurality of conductive fibers, thereby causing some of the memory alloy barbs in the first part of the memory alloy barbs and some of the memory alloy barbs in the second part of the memory alloy barbs to be deformed, so as to increase the number of the plurality of memory alloy barbs in contact with the plurality of conductive fibers.

5. The method according to claim 4, characterized in that After controlling the plurality of conductive fibers to be disconnected from the corresponding second circuit, the method further includes: Obtaining a third number of the memory alloy barbs in the first portion of the memory alloy barbs that are conductively connected to the second portion of the memory alloy barbs; When the third number is less than a preset fourth threshold, a prompt message is output, where the prompt message is used to prompt that the first interface and the second interface are in poor contact.

6. The method according to claim 3, characterized in that The method further comprises: Controlling the first circuit connected to each memory alloy barb to provide a preset voltage one by one, controlling the first circuits corresponding to other memory alloy barbs to be disconnected, controlling the second circuits corresponding to the plurality of conductive fibers to be disconnected, detecting the voltage values ​​of the other memory alloy barbs, and dividing the memory alloy barbs whose voltage values ​​among the other memory alloy barbs are greater than a preset voltage threshold and the memory alloy barbs that are connected to the first circuit providing the preset voltage into the same interconnection block; At least two interconnected blocks corresponding to the plurality of memory alloy barbs are determined to determine the target memory alloy barb.

7. The method according to claim 6, characterized in that The method further comprises: According to the number of memory alloy barbs in each interconnection block, the at least two interconnection blocks are divided into at least one first interconnection block and at least one second interconnection block, the memory alloy barbs of the at least one first interconnection block are the first part of the target memory alloy barbs, and the memory alloy barbs of the at least one second interconnection block are the second part of the target memory alloy barbs.

8. The method according to claim 7, characterized in that After determining at least two interconnected blocks corresponding to the plurality of memory alloy barbs, the method further includes: Control the first circuit connected to the memory alloy barbs of each first interconnection block to provide the preset voltage, control the first circuit connected to the memory alloy barbs of each second interconnection block to be grounded, and control the second circuits corresponding to the plurality of conductive fibers to be disconnected; Detect the voltage value of each conductive fiber, control the second circuit corresponding to the conductive fiber whose voltage value is greater than or equal to the preset voltage threshold to be turned on and receive the preset voltage, and control the second circuit corresponding to the conductive fiber whose voltage value is less than the preset voltage threshold to be turned on and grounded, so that the first interface and the second interface are turned on.

9. An interface system, characterized in that: The interface system comprises a first interface, a second interface, a plurality of first circuits, and a plurality of second circuits, wherein the first interface comprises a plurality of memory alloy barbs, each of which is connected to a first circuit, and the second interface comprises a plurality of conductive fibers, each of which is connected to a second circuit, including: a detection unit, configured to obtain a first number of target memory alloy barbs in contact with any one of the plurality of conductive fibers among the plurality of memory alloy barbs when the first interface and the second interface are connected to each other through the plurality of memory alloy barbs and the plurality of conductive fibers; A reinforcement unit is used to control at least part of the target memory alloy barbs to be disconnected from the corresponding first circuit when the first number is less than a preset first threshold value, and to control the conductive fibers in contact with at least part of the target memory alloy barbs to be disconnected from the corresponding second circuit, so that the current of the remaining memory alloy barbs in the target memory alloy barbs is increased, thereby generating deformation, so as to increase the number of memory alloy barbs in contact with the multiple conductive fibers among the multiple memory alloy barbs.

10. A computer device comprising a memory and a processor, wherein the memory stores a computer program that can be run on the processor, characterized in that: When the processor executes the program, the steps of the method according to any one of claims 1 to 8 are implemented.

Images