Semiconductor structure

Abstract

The embodiment of the invention provides a semiconductor structure which comprises a substrate and a light-emitting structure located on one side of the substrate, the light-emitting structure comprises a first-type semiconductor layer, an active layer and a second-type semiconductor layer which are sequentially stacked, the first-type semiconductor layer comprises a first part which is not covered by the active layer, and the second-type semiconductor layer comprises a second part which is not covered by the active layer. The first heat dissipation module is arranged on the first part, so that the surface, close to the first part, of the first heat dissipation module can be used for surface heat dissipation of the first part of the first type semiconductor layer, and the side face, close to the light-emitting structure, of the first heat dissipation module can be used for heat dissipation of the side wall of the light-emitting structure. The heat exchange area between the first heat dissipation module and the light-emitting structure is increased, so that a good heat dissipation effect is achieved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular, to a semiconductor structure. Background Art

[0002] With the development of display technology, light-emitting devices such as light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), and liquid crystal displays (LCDs) are widely used in electronic products such as computers, televisions, mobile phones, and wearable devices. Among them, micro light-emitting diodes (Micro LEDs) are an emerging technology mainly based on inorganic GaN-based LEDs. Compared with LCDs and OLEDs, micro light-emitting diodes have the advantages of small size, high contrast, low power consumption, and long lifespan. However, the current optoelectronic conversion efficiency of Micro LED light-emitting devices needs to be improved. A large proportion of electrical energy is converted into heat energy, resulting in too high a temperature of the light-emitting device, and further causing a decrease in the lifespan of the light-emitting device. Therefore, the heat dissipation problem of the light-emitting device has become a major problem affecting its development and application. Summary of the Invention

[0003] In view of this, this application provides a semiconductor structure to solve the problem of poor heat dissipation of the light-emitting structure.

[0004] According to one aspect of this application, this application provides a semiconductor structure, which includes: a substrate; a light-emitting structure located on one side of the substrate, the light-emitting structure including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence on the substrate, the first-type semiconductor layer including a first part not covered by the active layer; and a first heat dissipation module located on the first part.

[0005] An embodiment of this application provides a semiconductor structure, which includes a substrate and a light-emitting structure located on one side of the substrate. The light-emitting structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence. The first-type semiconductor layer includes a first part not covered by the active layer. The first heat dissipation module is disposed on the first part, so that the surface of the first heat dissipation module facing the first part can be used for heat dissipation of the surface of the first part of the first-type semiconductor layer, and the side surface of the first heat dissipation module facing the light-emitting structure can be used for heat dissipation of the side wall of the light-emitting structure, increasing the area of heat exchange between the first heat dissipation module and the light-emitting structure to obtain a better heat dissipation effect. Description of the Drawings

[0006] Figure 1It is a top view schematic diagram of a semiconductor structure shown in an embodiment of the present application;

[0007] Figure 2 It is a cross-sectional view along Figure 1 the AB line in

[0008] Figure 3 It is a cross-sectional view along Figure 1 the CD line in

[0009] Figure 4 It is a top view schematic diagram of another semiconductor structure shown in an embodiment of the present application;

[0010] Figure 5 It is a cross-sectional schematic diagram of a semiconductor structure shown in an embodiment of the present application;

[0011] Figure 6 It is a cross-sectional schematic diagram of another semiconductor structure shown in an embodiment of the present application;

[0012] Figure 7 It is a cross-sectional schematic diagram of yet another semiconductor structure shown in an embodiment of the present application;

[0013] Figure 8 It is a cross-sectional schematic diagram of yet another semiconductor structure shown in an embodiment of the present application;

[0014] Figure 9 It is a top view schematic diagram of yet another semiconductor structure shown in an embodiment of the present application;

[0015] Figure 10 It is a top view schematic diagram of yet another semiconductor structure shown in an embodiment of the present application;

[0016] Figure 11 It is a cross-sectional schematic diagram of yet another semiconductor structure shown in an embodiment of the present application;

[0017] Figure 12 It is a cross-sectional schematic diagram of yet another semiconductor structure shown in an embodiment of the present application;

[0018] Figure 13 It is a top view schematic diagram of yet another semiconductor structure shown in an embodiment of the present application;

[0019] Figure 14 It is a top view schematic diagram of yet another semiconductor structure shown in an embodiment of the present application;

[0020] Figure 15 It is a cross-sectional view along Figure 14 the EF line in

[0021] Explanation of reference numerals:

[0022] 10 - Substrate; 20 - Light - emitting structure; 21 - First - type semiconductor layer; 211 - First part; 212 - Protrusion; 22 - Active layer; 23 - Second - type semiconductor layer; 30 - First heat - dissipation module; 31 - First heat - dissipation sub - module; 32 - Second heat - dissipation sub - module; 33 - Conductive layer; 331 - First conductive structure; 332 - Second conductive structure; 333 - Third conductive structure; 334 - Fourth conductive structure; 40 - Dielectric layer; 41 - First via; 42 - Second via; 51 - First electrode; 52 - Second electrode; 60 - Second heat - dissipation module. Detailed implementation manners

[0023] To enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. It should be understood that the terms "first", "second", etc. adopted in the present application are only used to distinguish information of the same type from each other, and do not necessarily need to be used to describe a specific order or sequence.

[0024] The present application provides a semiconductor structure, which can solve the problem of poor heat dissipation of light - emitting devices and help improve the performance of the semiconductor structure.

[0025] Figure 1 is a top - view schematic diagram of a semiconductor structure shown in an embodiment of the present application. Figure 2 is along Figure 1 the cross - sectional view of line AB in Figure 1 and Figure 2 As shown in

[0026] Specifically, as shown in Figure 1 and Figure 2 the light - emitting structure 20 is located on one side of the substrate 10. The light - emitting structure 20 includes a first - type semiconductor layer 21, an active layer 22, and a second - type semiconductor layer 23 that are sequentially stacked on the substrate 10. The first - type semiconductor layer 21 includes a first part 211 not covered by the active layer 22 and a second part covered by the active layer 22. The first heat - dissipation module 30 is located on the first part 211.

[0027] Specifically, the first heat dissipation module 30 can be a thermoelectric material heat dissipation device, and the thermoelectric material heat dissipation device can achieve the cooling and heat dissipation of the device. The first heat dissipation module 30 being located in the first portion 211 specifically means that the first heat dissipation module 30 is located above the first portion 211 and close to at least a part of the sidewall of the active layer 22. That is to say, the first heat dissipation module 30 and the active layer 22 are arranged side by side above the first type semiconductor layer 21. Optionally, the first heat dissipation module 30 can be bonded above the first portion 211 after being prefabricated, and the surface of the first heat dissipation module 30 can include an insulating layer to avoid affecting the circuit layout in the semiconductor structure.

[0028] In this embodiment, by arranging the first heat dissipation module 30 in the first portion 211, the heat exchange area between the first heat dissipation module 30 and the light-emitting structure 20 can be made larger. The surface of the first heat dissipation module 30 facing the substrate 10 can be used for the surface heat dissipation of the first portion 211 of the first type semiconductor layer 21, and the side surface of the first heat dissipation module 30 facing the active layer 22 of the light-emitting structure 20 can be used for the sidewall heat dissipation of the light-emitting structure 20. Therefore, the heat dissipation efficiency of the light-emitting structure 20 is high, and it has a very good heat dissipation effect.

[0029] In addition, arranging the first heat dissipation module 30 in the first portion 211 can also save space. Specifically, the size of the first heat dissipation module 30 is smaller than the size of the light-emitting structure 20. The orthographic projection of the first heat dissipation module 30 on the substrate is located in the orthographic projection of the first portion 211 of the first type semiconductor layer 21 on the substrate 10. The first portion 211 is often used to set the electrode structure of the first type semiconductor layer 21. Therefore, a part of the space of the first portion 211 can be used to set the first heat dissipation module 30, which is more convenient to integrate the first heat dissipation module 30 and the light-emitting structure 20, and realize the heat dissipation of the light-emitting structure 20 without increasing the volume of the semiconductor structure.

[0030] Optionally, as Figure 1 shown, the shape of the light-emitting structure 20 in this application is rectangular, and the two first heat dissipation modules 30 are respectively located on the two sidewalls of the light-emitting structure 20, which can reduce the volume of the semiconductor structure; optionally, a rectangular light-emitting structure can include four first heat dissipation modules respectively located on the four sidewalls, which can make the heat conduction area between the first heat dissipation module 30 and the light-emitting structure 20 the largest, and can improve the heat dissipation efficiency for the light-emitting structure 20. The number and shape of the first heat dissipation modules 30 can be adaptively adjusted according to the needs of the semiconductor structure; for example, when the shape of the light-emitting structure 20 is rectangular, only one first heat dissipation module is provided at one of the sidewalls.

[0031] Optionally, the material of the substrate 10 in an embodiment of this application can be materials such as sapphire, silicon carbide, single crystal silicon, polycrystalline silicon, diamond, or gallium nitride.

[0032] Specifically, the light-emitting structure 20 in an embodiment of the present application may be a micro light-emitting diode. The first-type semiconductor layer 21 may be an N-type semiconductor layer, and the material of the first-type semiconductor layer 21 may be an N-type doped group-III nitride-based material. The N-type doping element may include at least one of Si, Ge, Sn, Se, or Te. The active layer 22 may include at least one of a single quantum well structure, a multi-quantum well structure, a quantum wire structure, and a quantum dot structure. The second-type semiconductor layer 23 may be a P-type semiconductor layer, and the material of the second-type semiconductor layer 23 may be a P-type doped group-III nitride-based material. The P-type doping element may include at least one of Mg, Zn, Ca, Sr, or Ba. The group-III nitride-based material may include any one or a combination of GaN, AlGaN, InGaN, and AlInGaN.

[0033] Optionally, the light-emitting structure 20 may further include a transparent electrode on the side of the second-type semiconductor layer 23 away from the substrate 10. The material of the transparent electrode may be a transparent conductive film such as indium zinc oxide (IZO), indium tin oxide (ITO), or zinc tin oxide (ZTO).

[0034] Figure 3 is a cross-sectional view along Figure 1 the CD line in. As Figure 3 shown, in the direction parallel to the substrate 10 and along the sidewall of the active layer 22, the first heat dissipation module 30 includes a plurality of first heat dissipation sub-modules 31 and a plurality of second heat dissipation sub-modules 32 arranged alternately. The first heat dissipation sub-module 31 is made of a P-type semiconductor thermoelectric material, the second heat dissipation sub-module 32 is made of an N-type semiconductor thermoelectric material, and a conductive layer 33 that sequentially connects the plurality of first heat dissipation sub-modules 31 and the plurality of second heat dissipation sub-modules 32 in series, thereby forming an electrically series-connected and thermally parallel-connected structure.

[0035] That is to say, the first heat dissipation module 30 may include a P-type thermoelectric material and an N-type thermoelectric material, and the P-type thermoelectric material and the N-type thermoelectric material are connected in an electrically series-connected and thermally parallel-connected manner, which is a heat dissipation device with an active heat dissipation method. The N-type thermoelectric material refers to a semiconductor thermoelectric material with carriers being electrons. For example, the N-type thermoelectric material may be a Bi2Te3-based, PbX (X = S, Se, Te)-based, silicon-based, or magnesium-based material, etc., but is not limited to the listed materials. The P-type thermoelectric material refers to a semiconductor thermoelectric material with carriers being holes, including Bi2Te3-based, Sb2Te3, SnTe-based, PbTe-based, FeSi2-based, etc., but is not limited to the listed materials.

[0036] It should be noted that the arrangement direction of the plurality of first heat dissipation sub-modules 31 and the plurality of second heat dissipation sub-modules 32 is consistent with the shape of the adjacent sidewall of the active layer 22.

[0037] Exemplarily, as Figure 3 shown, in an embodiment of the present application, the conductive layer 33 includes a plurality of first conductive structures 331 arranged at intervals and a plurality of second conductive structures 332 arranged at intervals. The first conductive structures 331 are located on the side of the first heat dissipation sub-module 31 and the second heat dissipation sub-module 32 close to the substrate 10, and the second conductive structures 332 are located on the side of the first heat dissipation sub-module 31 and the second heat dissipation sub-module 32 away from the substrate 10; the first heat dissipation module 30 is formed by sequentially connecting a plurality of groups in series, and each group includes a first heat dissipation sub-module 31, a first conductive structure 331, a second heat dissipation sub-module 32, and a second conductive structure 332 that are sequentially connected in series.

[0038] Specifically, as Figure 3 shown, in the direction perpendicular to the substrate 10, the second conductive structure 332 is located on the side of the first conductive structure 331 away from the substrate 10. The first conductive structure 331 and the second conductive structure 332 are respectively located on both sides of the first heat dissipation sub-module 31, and the first conductive structure 331 and the second conductive structure 332 are respectively located on both sides of the second heat dissipation sub-module 32; in the direction parallel to the substrate 10, a plurality of first conductive structures 331 are arranged at intervals, and a plurality of second conductive structures 332 are arranged at intervals, so that the minimum repeating unit of the first heat dissipation module 30 is the first heat dissipation sub-module 31, the first conductive structure 331, the second heat dissipation sub-module 32, and the second conductive structure 332. The minimum repeating unit is a group, and a plurality of groups are sequentially connected in series to form an electrical series structure, thereby realizing the heat dissipation function.

[0039] It should be noted that, as Figure 3 shown, within a group, one end of the first heat dissipation sub-module 31 and the second heat dissipation sub-module 32 close to the substrate 10 is electrically connected through the first conductive structure 331, and one end of the first heat dissipation sub-module 31 and the second heat dissipation sub-module 32 away from the substrate 10 is not electrically connected; between two adjacent groups, for example, the first group and the second group, the second heat dissipation sub-module 32 in the first group and the first heat dissipation sub-module 31 in the second group are electrically connected through the second conductive structure 332 in the first group.

[0040] It should be noted that in a first heat dissipation module 30, by respectively applying electrical signals to the first heat dissipation sub-module 31 and the second heat dissipation sub-module 32 at the head and tail ends, the heat dissipation function is realized.

[0041] Figure 4 is a top view schematic diagram of another semiconductor structure shown in an embodiment of the present application. As Figure 4As shown in the figure, in an embodiment of the present application, the conductive layer 33 includes a plurality of third conductive structures 333 arranged at intervals and a plurality of fourth conductive structures 334 arranged at intervals. The third conductive structures 333 are located on the side of the first heat dissipation sub-module 31 and the second heat dissipation sub-module 32 close to the active layer 22, and the fourth conductive structures 334 are located on the side of the first heat dissipation sub-module 31 and the second heat dissipation sub-module 32 away from the active layer 22. The first heat dissipation module 30 is formed by sequentially connecting a plurality of groups in series. Each group includes a first heat dissipation sub-module 31, a third conductive structure 333, a second heat dissipation sub-module 32, and a fourth conductive structure 334 connected in series in sequence.

[0042] Specifically, as Figure 4 shown, in the direction parallel to the substrate 10 and pointing from the active layer 22 to the first heat dissipation module 30, the fourth conductive structure 334 is located on the side of the third conductive structure 333 away from the active layer 22. The third conductive structure 333 and the fourth conductive structure 334 are respectively located on both sides of the first heat dissipation sub-module 31, and the third conductive structure 333 and the fourth conductive structure 334 are respectively located on both sides of the second heat dissipation sub-module 32. In the direction parallel to the substrate 10 and along the sidewall of the active layer, a plurality of third conductive structures 333 are arranged at intervals, and a plurality of fourth conductive structures 334 are arranged at intervals, so that the minimum repeating unit of the first heat dissipation module 30 is the first heat dissipation sub-module 31, the third conductive structure 333, the second heat dissipation sub-module 32, and the fourth conductive structure 334. The minimum repeating unit is a group, and a plurality of groups are sequentially connected in series to form an electrical series structure, thereby realizing the heat dissipation function.

[0043] It should be noted that, as Figure 3 and Figure 4 shown, the gaps between the first heat dissipation sub-module 31, the second heat dissipation sub-module 32, and the conductive layer 33 should be filled with insulating substances.

[0044] In an embodiment of the present application, the material of the conductive layer 33 may be a light-reflective material. For example, the material of the conductive layer 33 may be silver; the third conductive structure 333 and / or the fourth conductive structure 334 may form a grating to achieve modification of light transmission. For example, in the direction perpendicular to the substrate 10, the heights of the third conductive structure 333 and the fourth conductive structure 334 are greater than or equal to the thickness of the active layer 22, and the conductive layer 33 forms a grating surrounding the active layer 22 to reflect the light emitted from the sidewalls of the active layer, reducing the light loss from the side, and improving the light-emitting efficiency of the light emitted from the direction away from the substrate of the second type semiconductor layer. In addition, the presence of the grating can also achieve the adjustment of the polarization state. For example, the third conductive structure 333 or the fourth conductive structure 334 forms a grating, and the third conductive structure 333 or the fourth conductive structure 334 with different sizes and different spacing distances can analyze and manipulate light, thereby adjusting the polarization state. In the embodiment of the present application, the conductive layer 33 in the first heat dissipation module 30 is reused as a grating, which can save the process flow of forming the grating layer and reduce the volume of the semiconductor structure. Therefore, this structure can reduce the production cost of the semiconductor structure.

[0045] To further improve the heat dissipation efficiency, Figure 5 is a schematic cross-sectional view of a semiconductor structure shown in an embodiment of the present application. As Figure 5 shown, in the semiconductor structure provided in an embodiment of the present application, the first type semiconductor layer 21 includes a protrusion 212 that is higher than the first part 211 and is covered by the active layer 22, and the first heat dissipation module 30 is disposed at the junction of the first part 211 and the protrusion 212. Since the heat generated when the light-emitting structure 20 operates is easily concentrated on the first type semiconductor layer 21, the first type semiconductor layer 21 is arranged in a stepped shape including the first part 211 and the protrusion 212, and the first heat dissipation module 30 is located at the junction of the first part 211 and the protrusion 212, which can make one side of the first heat dissipation module 30 facing the substrate 10 be used for dissipating heat from the first part 211 of the first type semiconductor layer 21, and one side of the first heat dissipation module 30 facing the protrusion 212 be used for dissipating heat from the protrusion 212 of the first type semiconductor layer 21. In such a structure, the first heat dissipation module 30 has a larger heat conduction area for the first type semiconductor layer 21 where the heat is concentrated, which can improve the heat dissipation efficiency of the first heat dissipation module 30 for the first type semiconductor layer 21, and further can effectively reduce the temperature of the light-emitting structure 20.

[0046] Figure 6 is another schematic cross-sectional view of a semiconductor structure shown in an embodiment of the present application. As Figure 6As shown, a semiconductor structure according to an embodiment of the present application further includes a dielectric layer 40. Specifically, the dielectric layer 40 is located between the light-emitting structure 20 and the first heat dissipation module 30, so that the first heat dissipation module 30 is electrically isolated from the light-emitting structure 20. By providing the dielectric layer 40 between the light-emitting structure 20 and the first heat dissipation module 30, it is possible to prevent the first heat dissipation module 30 from being electrically connected to the light-emitting structure 20, avoid circuit failure of the light-emitting structure 20 or the first heat dissipation module 30, and thus improve the reliability of the semiconductor structure. The first heat dissipation module 30 is in partial surface contact with the dielectric layer 40, so that the heat of the light-emitting structure 20 is first conducted to the dielectric layer 40 and then to the first heat dissipation module 30. According to the embodiment of the present application, the heat dissipation of the light-emitting structure 20 by the first heat dissipation module 30 can reduce the temperature of the light-emitting structure 20.

[0047] Optionally, the dielectric layer 40 may be an insulating material. For example, the dielectric layer 40 may be silicon dioxide, silicon nitride, silicon carbide, etc.

[0048] Optionally, the dielectric layer 40 may include a distributed Bragg reflector (DBR) structure. Specifically, the DBR structure is composed of two film layers with different refractive indexes alternating. While the dielectric layer 40 plays an insulating role, it can also play a role in reflecting light, improve the reflection effect of the emitted light of the light-emitting structure 20, and thus improve the intensity of the emitted light.

[0049] Figure 7 is a schematic cross-sectional view of another semiconductor structure shown in an embodiment of the present application. As Figure 7 shown, in the semiconductor structure according to an embodiment of the present application, the surface of the first heat dissipation module 30 facing away from the substrate 10 is higher than the surface of the active layer 22 facing away from the substrate 10. That is to say, the side wall of the first heat dissipation module 30 can surround the active layer 22, and the heat generated when the active layer 22 works can be transferred to the first heat dissipation module 30 by heat conduction. Therefore, this structure further increases the heat exchange area between the light-emitting structure 20 and the first heat dissipation module 30, and increases the heat dissipation area of the heat dissipation module for the light-emitting structure 20. Exemplarily, the surface of the first heat dissipation module 30 facing away from the substrate 10 may be substantially flush with the surface of the second type semiconductor layer 23 facing away from the substrate 10, which can further increase the heat exchange area between the light-emitting structure 20 and the first heat dissipation module 30.

[0050] Figure 8 is a schematic cross-sectional view of another semiconductor structure shown in an embodiment of the present application. As Figure 8As shown, the semiconductor structure according to an embodiment of the present application further includes a first electrode 51 and a second electrode 52, and the dielectric layer 40 further covers the sidewalls of the light-emitting structure 20 and the surface of the light-emitting structure 20 away from the substrate 10. The first electrode 51 is electrically connected to the first-type semiconductor layer 21 through a first via hole 41, and the first via hole 41 is located in the dielectric layer 40 on the first portion 211. The first electrode 51 provides an electrical signal for the first-type semiconductor layer 21. The second electrode 52 is electrically connected to the second-type semiconductor layer 23 through a second via hole 42, and the second via hole 42 is located in the dielectric layer 40 on the second-type semiconductor layer 23. The second electrode 52 provides an electrical signal for the second-type semiconductor layer 23. That is, the orthographic projection of the second electrode 52 on the substrate 10 is located in the orthographic projection of the second-type semiconductor layer 23 on the substrate 10. Optionally, the materials of the first electrode 51 and the second electrode 52 may be metal materials respectively. For example, the materials of the first electrode 51 and the second electrode 52 may be copper, silver, iron and their alloys respectively. Optionally, the sidewalls of the first electrode 51 and the second electrode 52 are covered with an insulating layer (not labeled) to avoid short circuits.

[0051] Optionally, in a direction parallel to the substrate 10, the first heat dissipation module 30 surrounds the sidewalls of the active layer 22 in a circle; or, the first heat dissipation module 30 surrounds the sidewalls of a part of the active layer 22.

[0052] Specifically, Figure 9 is a top view schematic diagram of another semiconductor structure shown in an embodiment of the present application. As Figure 9 shown, in the semiconductor structure according to an embodiment of the present application, when the first heat dissipation module 30 surrounds the sidewalls of a part of the active layer 22 in a direction parallel to the substrate 10, the orthographic projection of the first heat dissipation module 30 on the substrate 10 is an annular shape with a notch, and at least a part of the orthographic projection of the first electrode 51 on the substrate 10 is located at the notch, saving the space of the first portion 211.

[0053] Specifically, Figure 10 is a top view schematic diagram of another semiconductor structure shown in an embodiment of the present application. As Figure 10As shown in the figure, in a semiconductor structure according to an embodiment of the present application, in a direction parallel to the substrate 10, when the first heat dissipation module 30 surrounds the sidewalls of an active layer 22 in a circle, the first electrode 51 is located on a side of the first heat dissipation module 30 away from the active layer 22. Specifically, compared with the position where the first electrode 51 is located between the active layer 22 and the first heat dissipation module 30, when the first heat dissipation module 30 is located between the active layer 22 and the first electrode 51, the first heat dissipation module 30 can not only cool the light-emitting structure 20, but also dissipate heat from the first electrode 51 to a certain extent, improving the heat dissipation efficiency. In addition, by setting the first electrode 51 as an annular shape surrounding the active layer 22 and the second-type semiconductor layer 23, the first electrode 51 can reflect the light reaching the first electrode 51, which can achieve the effect of gathering light, avoid light from emitting out of the non-display surface, and improve the light-emitting efficiency of the light-emitting structure 20. It should be noted that the first electrode 51 and the first heat dissipation module 30 are electrically isolated. The term "surround" in the embodiment of the present application can be that there is physical contact between the first electrode 51 and the second heat dissipation module 60, or there is a certain distance between the first electrode 51 and the second heat dissipation module 60.

[0054] Optionally, as Figure 9 and Figure 10 shown, the second-type semiconductor layer 23 and the active layer 22 being circular in the orthographic projection on the substrate 10 can improve the uniformity of light emission in all directions and avoid color difference; optionally, the second-type semiconductor layer 23 and the active layer 22 are triangular, quadrilateral or other shapes in the orthographic projection on the substrate 10.

[0055] Figure 11 is a schematic cross-sectional view of another semiconductor structure shown in an embodiment of the present application. As Figure 11 shown, a semiconductor structure according to an embodiment of the present application further includes a second heat dissipation module 60, and the second heat dissipation module 60 is located on the surface of the light-emitting structure 20 facing away from the substrate 10. The second heat dissipation module 60 being located on the surface of the light-emitting structure 20 facing away from the substrate 10 can transfer the heat of the second-type semiconductor layer 23 to the second heat dissipation module 60. The second-type semiconductor layer 23 is also a region with relatively high heat in the light-emitting structure 20. In the embodiment of the present application, setting the second heat dissipation module 60 can further improve the heat dissipation effect on the light-emitting structure 20, reduce the temperature of the light-emitting structure 20, and thereby extend the service life of the light-emitting structure 20.

[0056] Figure 12 is a schematic cross-sectional view of another semiconductor structure shown in an embodiment of the present application. Specifically, as Figure 12As shown, in the direction parallel to the substrate 10, the second heat dissipation module 60 includes: a plurality of third heat dissipation sub-modules 35 and a plurality of fourth heat dissipation sub-modules 36 arranged alternately, the third heat dissipation sub-module 35 is made of p-type semiconductor thermoelectric material, and the fourth heat dissipation sub-module 36 is made of n-type semiconductor thermoelectric material; a plurality of fifth conductive structures 335 arranged at intervals and a plurality of sixth conductive structures 336 arranged at intervals, the fifth conductive structure 335 is located on the side of the third heat dissipation sub-module 35 and the fourth heat dissipation sub-module 36 close to the substrate 10, and the sixth conductive structure 336 is located on the side of the third heat dissipation sub-module 35 and the fourth heat dissipation sub-module 36 facing away from the substrate 10; wherein, the second heat dissipation module 60 is formed by sequentially connecting a plurality of groups in series, and each group includes a third heat dissipation sub-module 35, a fifth conductive structure 335, a fourth heat dissipation sub-module 36 and a sixth conductive structure 336 connected in series in sequence.

[0057] Similar to the first heat dissipation module 30, the fifth conductive structure 335 and the sixth conductive structure 336 in the second heat dissipation module 60 can also be used as gratings. At this time, the light emitting direction of the light emitting structure 20 is the direction from the active layer 22 to the substrate 10.

[0058] Optionally, the light emitting direction of the light emitting structure 20 is the direction from the active layer 22 to the second type semiconductor layer 23, and the second heat dissipation module 60 is located at the outer peripheral position of the second type semiconductor layer 23 to avoid affecting the light emitting efficiency.

[0059] Figure 13 It is a top view schematic diagram of another semiconductor structure shown in an embodiment of the present application. As Figure 13 shown, the semiconductor structure of an embodiment of the present application includes a plurality of light emitting structures 20, and the plurality of light emitting structures 20 are arranged in an array on the substrate 10. That is to say, the semiconductor structure in this embodiment can be used to form a display panel, and the plurality of light emitting structures 20 can be used to form pixels in the display panel. The light emitting structure 20 can include multiple light emitting colors, and the arrangement method can be diamond type, delta type, etc.

[0060] Optionally, Figure 14 It is a top view schematic diagram of another semiconductor structure shown in an embodiment of the present application, Figure 15 It is a cross-sectional view along the Figure 14 EF line in Figure 14 and Figure 15As shown, a light-emitting structure 20 corresponds to a first heat dissipation module 30. The active layer 22 and the second-type semiconductor layer 23 of the light-emitting structure 20 have a notch exposing the first-type semiconductor layer 21. The notch is the first part 211 of the first-type semiconductor layer 21. The first heat dissipation module 30 is located on the first part 211. The remaining part of the notch minus the first heat dissipation module 30 can be used to set the first electrode (not shown in the figure), saving the space of the semiconductor structure. It should be noted that for the sake of clear drawing, Figure 14 the dielectric layer 40 located between the light-emitting structure 20 and the first heat dissipation module 30 is not shown, Figure 15 and the dielectric layer 40 located between the light-emitting structure 20 and the first heat dissipation module 30 is shown.

[0061] In the embodiment of the present application, by forming the first heat dissipation module on the first part, the surface of the first heat dissipation module facing the first part can be used for surface heat dissipation of the first part of the first-type semiconductor layer, and the side surface of the first heat dissipation module facing the light-emitting structure can be used for side wall heat dissipation of the light-emitting structure. It can make the heat exchange area between the first heat dissipation module and the light-emitting structure larger, so it can achieve a better heat dissipation effect.

[0062] The above are only the preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included within the scope of protection of the present application.

Claims

1. A semiconductor structure, characterized in that, Comprising: A substrate (10), A light-emitting structure (20) located on one side of the substrate (10), the light-emitting structure (20) comprising a first-type semiconductor layer (21), an active layer (22), and a second-type semiconductor layer (23) stacked in sequence on the substrate (10), and a first portion (211) of the first-type semiconductor layer (21) not covered by the active layer (22); And A first heat dissipation module (30) located on the first portion (211).

2. The semiconductor structure according to claim 1, characterized in that, In a direction parallel to the substrate (10) and along the sidewall of the active layer (22), the first heat dissipation module (30) comprises a plurality of first heat dissipation sub-modules (31) and a plurality of second heat dissipation sub-modules (32) arranged alternately, the first heat dissipation sub-modules (31) being made of a p-type semiconductor thermoelectric material, the second heat dissipation sub-modules (32) being made of an n-type semiconductor thermoelectric material, and a conductive layer (33) connecting the plurality of first heat dissipation sub-modules (31) and the plurality of second heat dissipation sub-modules (32) in series in sequence.

3. The semiconductor structure according to claim 2, characterized in that, The conductive layer (33) comprises a plurality of first conductive structures (331) arranged at intervals and a plurality of second conductive structures (332) arranged at intervals, the first conductive structures (331) being located on the side of the first heat dissipation sub-modules (31) and the second heat dissipation sub-modules (32) close to the substrate (10), and the second conductive structures (332) being located on the side of the first heat dissipation sub-modules (31) and the second heat dissipation sub-modules (32) away from the substrate (10); The first heat dissipation module (30) is formed by a plurality of groups connected in series in sequence, each group comprising the first heat dissipation sub-module (31), the first conductive structure (331), the second heat dissipation sub-module (32), and the second conductive structure (332) connected in series in sequence.

4. The semiconductor structure according to claim 2, characterized in that, The conductive layer (33) comprises a plurality of third conductive structures (333) arranged at intervals and a plurality of fourth conductive structures (334) arranged at intervals, the third conductive structures (333) being located on the side of the first heat dissipation sub-modules (31) and the second heat dissipation sub-modules (32) close to the active layer (22), and the fourth conductive structures (334) being located on the side of the first heat dissipation sub-modules (31) and the second heat dissipation sub-modules (32) away from the active layer (22); The first heat dissipation module (30) is formed by a plurality of groups connected in series in sequence, each group comprising the first heat dissipation sub-module (31), the third conductive structure (333), the second heat dissipation sub-module (32), and the fourth conductive structure (334) connected in series in sequence.

5. The semiconductor structure according to claim 4, characterized in that, The material of the conductive layer (33) is a light-reflective material; the third conductive structure (333) and / or the fourth conductive structure (334) form a grating.

6. The semiconductor structure according to claim 1, characterized in that, The semiconductor structure further comprises: A dielectric layer (40) located between the light-emitting structure (20) and the first heat dissipation module (30) to electrically isolate the first heat dissipation module (30) from the light-emitting structure (20).

7. The semiconductor structure according to claim 6, characterized in that, The dielectric layer (40) also covers the sidewalls of the light-emitting structure (20) and the surface of the light-emitting structure (20) away from the substrate (10); The semiconductor structure further includes: A first electrode (51) electrically connected to the first-type semiconductor layer (21) through a first through hole (41), the first through hole (41) being in the dielectric layer (40) on the first portion (211); and A second electrode (52) electrically connected to the second-type semiconductor layer (23) through a second through hole (42), the second through hole (42) being in the dielectric layer (40) on the second-type semiconductor layer (23).

8. The semiconductor structure according to claim 7, characterized in that, In a direction parallel to the substrate (10), the first heat dissipation module (30) surrounds the sidewall of the active layer (22) in a circle; or, the first heat dissipation module (30) surrounds a part of the sidewall of the active layer (22).

9. The semiconductor structure according to claim 8, characterized in that, In a direction parallel to the substrate (10), when the first heat dissipation module (30) surrounds the sidewall of the active layer (22) in a circle, the first electrode (51) is located on a side of the first heat dissipation module (30) away from the active layer (22).

10. The semiconductor structure according to claim 8, characterized in that, In a direction parallel to the substrate (10), when the first heat dissipation module (30) surrounds a part of the sidewall of the active layer (22), the orthographic projection of the first heat dissipation module (30) on the substrate (10) is an annular shape with a notch, and the orthographic projection of the first electrode (51) on the substrate (10) is at least partially located at the notch.

11. The semiconductor structure according to claim 6, characterized in that, The material of the dielectric layer (40) is an insulating material, and the dielectric layer (40) includes a DBR structure.

12. The semiconductor structure according to claim 1, characterized in that, The surface of the first heat dissipation module (30) facing away from the substrate (10) is higher than the surface of the active layer (22) facing away from the substrate (10).

13. The semiconductor structure according to claim 1, characterized in that, The semiconductor structure further includes a second heat dissipation module (60), and the second heat dissipation module (60) is located on the surface of the light-emitting structure (20) facing away from the substrate (10).

14. The semiconductor structure according to claim 13, characterized in that, In a direction parallel to the substrate (10), the second heat dissipation module (60) includes: A plurality of third heat dissipation sub-modules (35) and a plurality of fourth heat dissipation sub-modules (36) arranged alternately, the third heat dissipation sub-modules (35) being made of p-type semiconductor thermoelectric materials, and the fourth heat dissipation sub-modules (36) being made of n-type semiconductor thermoelectric materials; A plurality of fifth conductive structures (335) arranged at intervals and a plurality of sixth conductive structures (336) arranged at intervals, the fifth conductive structures (335) being located on a side of the third heat dissipation sub-modules (35) and the fourth heat dissipation sub-modules (36) close to the substrate (10), and the sixth conductive structures (336) being located on a side of the third heat dissipation sub-modules (35) and the fourth heat dissipation sub-modules (36) facing away from the substrate (10); Wherein, the second heat dissipation module (60) is formed by sequentially connecting a plurality of groups in series, and each group includes the third heat dissipation sub-module (35), the fifth conductive structure (335), the fourth heat dissipation sub-module (36) and the sixth conductive structure (336) connected in series in sequence.

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