Perovskite solar cell and preparation method and application thereof

Abstract

The invention discloses a perovskite solar cell and a preparation method and application thereof, the perovskite solar cell comprises a hole transport layer and an electron transport layer, a bulk phase modified perovskite light absorption layer is arranged between the hole transport layer and the electron transport layer, the bulk phase modification material of the bulk phase modified perovskite light absorption layer is F16CuPc, and the bulk phase modification material of the bulk phase modified perovskite light absorption layer is F16CuPc. And the hole transport layer is made of a CuPc material. According to the invention, perovskite is modified through the F16CuPc bulk phase, CuPc / F16CuPc and F16CuPc / C60 / BCP interfaces are formed, charge transfer and separation are promoted, carrier recombination is reduced, effective utilization of small-amplitude temperature rise in the illumination process of the cell is realized by using the thermoelectricity of the CT effect of the CuPc / F16CuPc interfaces, and the operation voltage and efficiency of the solar cell are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and particularly relates to a perovskite solar cell, a preparation method thereof, and an application thereof. Background Art

[0002] In recent years, perovskite solar cells have developed rapidly, but further improvement of the efficiency and stability of perovskite solar devices remains an important research direction in this field. Since the light absorption cut-off wavelength of perovskite is usually below 900 nm, its infrared light cannot be utilized, which easily causes a relatively high temperature rise and affects the device performance. In the field of perovskite photovoltaics, some studies have improved the heat dissipation ability of perovskite and reduced the influence of temperature rise by introducing graphene and optimizing the device heat dissipation structure. However, these methods only dissipate heat to avoid the influence of temperature rise on the performance of perovskite solar cells, and do not effectively utilize the perovskite thermal energy. Summary of the Invention

[0003] The present invention aims to solve at least one of the technical problems in the related art to some extent.

[0004] To this end, an embodiment of the present invention provides a perovskite solar cell, a preparation method thereof, and an application thereof.

[0005] In a first aspect, the present invention provides a perovskite solar cell, which includes a hole transport layer and an electron transport layer. A bulk-modified perovskite light-absorbing layer is disposed between the hole transport layer and the electron transport layer. The bulk-modifying material of the bulk-modified perovskite light-absorbing layer is F 16 CuPc, and the hole transport layer is made of CuPc material.

[0006] Further, the perovskite solar cell further includes a transparent conductive glass, a top electrode, and a packaging glass. The transparent conductive glass, the hole transport layer, the bulk-modified perovskite light-absorbing layer, the electron transport layer, the top electrode, and the packaging glass are sequentially disposed.

[0007] Further, the transparent conductive glass includes one of ITO glass, FTO glass, and AZO glass.

[0008] Further, the electron transport layer includes a C60 layer and a BCP layer.

[0009] Further, the top electrode includes one of Au, Ag, Cu, IWO, and AZO.

[0010] Further, the packaging glass includes ultra-clear glass.

[0011] Second aspect, the present invention provides a method for preparing a perovskite solar cell for preparing the perovskite solar cell proposed in the first aspect above, comprising the following steps:

[0012] (a) Prepare a hole transport layer on a transparent conductive glass;

[0013] (b) Prepare a bulk-modified perovskite light-absorbing layer on the surface of the hole transport layer;

[0014] (c) Prepare an electron transport layer on the surface of the bulk-modified perovskite light-absorbing layer.

[0015] Further, the thickness of the hole transport layer is 15 - 30 nm.

[0016] Further, step (b) includes co-evaporating AX:BX2:F 16 CuPc with a molar ratio of 1:(1 - 1.1):(0.05 - 0.1) onto the hole transport layer to form the bulk-modified perovskite light-absorbing layer, where A is formamidinium or a formamidinium / methylammonium group dominated by methylammonium, B is Pb, and X is one of I, Br, Cl.

[0017] Further, step (b) includes first evaporating AX:F 16 CuPc with a molar ratio of 1:(0.05 - 0.1) onto the hole transport layer, and then coating BX2 by solution method to form the bulk-modified perovskite light-absorbing layer, where A is formamidinium or a formamidinium / methylammonium group dominated by methylammonium, B is Pb, and X is one of I, Br, Cl.

[0018] Further, in step (c), a C60 layer is deposited first and then a BCP layer is deposited. The thickness of the C60 layer is 40 - 60 nm, and the thickness of the BCP layer is 10 - 15 nm.

[0019] Further, the thickness of the bulk-modified perovskite light-absorbing layer is 500 - 700 nm.

[0020] Third aspect, the present invention provides an application of the perovskite solar cell proposed in the first aspect above or the perovskite solar cell prepared by the preparation method proposed in the second aspect above in the field of photovoltaics.

[0021] Compared with the prior art, the beneficial effects of the present invention are:

[0022] The present invention uses F 16 CuPc to conduct bulk modification on perovskite to form CuPc / F 16 CuPc, F 16The CuPc / C60 / BCP interface promotes charge transfer and separation, reduces carrier recombination, and simultaneously utilizes the thermoelectricity of the CT effect at the CuPc / F 16 CuPc interface to effectively utilize the small temperature rise during the illumination process of the battery, thereby increasing the operating voltage and efficiency of the solar cell. Brief Description of the Drawings

[0023] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments in conjunction with the drawings, wherein:

[0024] Figure 1 It is a schematic diagram of the perovskite solar cell structure of the present invention. Detailed Embodiments

[0025] The embodiments of the present invention will be described in detail below. The examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0026] The perovskite solar cell of the present invention, its preparation method and application will be described below in conjunction with the drawings.

[0027] As Figure 1 shown, the perovskite solar cell of the present invention includes a transparent conductive glass, a hole transport layer, a bulk-modified perovskite light-absorbing layer, an electron transport layer, a top electrode, and a packaging glass, which are arranged in sequence.

[0028] The transparent conductive glass includes one of ITO glass, FTO glass, and AZO glass, and is generally prepared by magnetron sputtering on the glass.

[0029] The hole transport layer is made of CuPc material and is prepared by vacuum deposition. In some embodiments, when preparing the CuPc hole transport layer by vacuum deposition, the vacuum degree is below 10 -4 Pa, the evaporation temperature is 295 - 325 °C, the evaporation rate is 0.2 - 0.4 Å / s, and the evaporation thickness is 15 - 30 nm.

[0030] The bulk-modifying material of the bulk-modified perovskite light-absorbing layer is copper(II) hexadecafluorophthalocyanine (F 16 CuPc), and the thickness of the bulk-modified perovskite light-absorbing layer is 500 - 700 nm.

[0031] The electron transport layer includes a C60 layer and a BCP layer, and can be prepared by methods such as thermal evaporation. When preparing the electron transport layer by thermal evaporation, the electron transport layer material is directly evaporated on the surface of the bulk-modified perovskite, and the evaporation conditions are that the vacuum degree is 10-4 Below Pa, first deposit C60 with a deposition temperature of 300 - 330 °C, a deposition rate of 0.8 - 1.2 Å / s, and a deposition thickness of 40 - 60 nm. Then deposit BCP with a deposition rate of 0.08 - 0.12 Å / s and a deposition thickness of 10 - 15 nm.

[0032] The top electrode is a top metal electrode or a metal oxide transparent electrode, and the main materials are Au, Ag, Cu, IWO, AZO, etc. It can be prepared by methods such as thermal evaporation, magnetron sputtering, reactive plasma deposition, etc.

[0033] The encapsulation glass includes ultra-white glass, which is used to protect the perovskite solar cell from erosion by water vapor, etc., and improve its stability.

[0034] A method for preparing a perovskite solar cell includes the following steps:

[0035] (a) Prepare a hole transport layer on a transparent conductive glass;

[0036] (b) Prepare a bulk-modified perovskite light-absorbing layer on the surface of the hole transport layer;

[0037] (c) Prepare an electron transport layer on the surface of the bulk-modified perovskite light-absorbing layer.

[0038] Among them, in step (a), a hole transport layer is prepared on the transparent conductive glass and used as the substrate for subsequent perovskite thin film preparation. The thickness of the hole transport layer is 15 - 30 nm.

[0039] In step (b), the bulk-modified perovskite light-absorbing layer can be prepared on the surface of the hole transport layer by one-step evaporation or two-step evaporation method.

[0040] When prepared by the one-step evaporation method, AX:BX2:F with a molar ratio of 1:(1 - 1.1):(0.05 - 0.1) 16 CuPc is evaporated in one step onto the hole transport layer to form the bulk-modified perovskite light-absorbing layer. Among them, A is formamidinium or formamidinium / methylammonium mainly based on methylammonium, B is Pb, and X is one of I, Br, Cl. The evaporation conditions are: the vacuum degree is below 5×10 -4 Pa, the substrate temperature is 70 - 80 °C, the evaporation temperature of the AX source is 70 - 100 °C, and the evaporation rate is 1.3 - 1.6 Å / s; the evaporation temperature of the BX2 source is 290 - 320 °C, and the evaporation rate is 0.8 - 1.0 Å / s, F 16 The evaporation temperature of the CuPc source is 310 - 330 °C, and the evaporation rate is 0.08 - 0.12 Å / s. BX2 and F 16CuPc can be vapor-deposited homogeneously or separately, and the thickness of the thin film vapor-deposited is 500 - 700 nm. During the vapor deposition process, a crystal oscillator film thickness gauge is used to monitor the thickness and vapor deposition rate of the thin film in real time.

[0041] When the two-step vapor deposition method is adopted, first, AX:F with a molar ratio of 1:(0.05 - 0.1) 16 is vapor-deposited onto the hole transport layer, and then BX2 is coated by a solution method to form the bulk-modified perovskite light-absorbing layer. Among them, A is formamidinium or formamidinium / methylammonium mainly based on methylammonium, B is Pb, and X is one of I, Br, and Cl. The vapor deposition conditions are as follows: the vacuum degree is below 8×10 - 4 Pa, the vapor deposition temperature of the AX source is 70 - 100 °C, and the vapor deposition rate is 1.3 - 1.6 Å / s; 16 the vapor deposition temperature of the CuPc source is 310 - 330 °C, and the vapor deposition rate is 0.08 - 0.12 Å / s; the thickness of the thin film vapor-deposited is 300 - 500 nm. During the vapor deposition process, a crystal oscillator film thickness gauge is used to monitor the thickness and vapor deposition rate of the thin film in real time. When spin-coating, BX2 is dispersed in pure DMF or a DMF / DMSO mixed solvent, the volume ratio of DMF to DMSO in the mixed solvent is 4:1, the concentration of BX2 is 1.2 - 1.6 M, the annealing temperature after spin-coating is 100 - 130 °C, and the time is 10 - 30 min.

[0042] In step (c), the C60 layer is first deposited and then the BCP layer is deposited by thermal vapor deposition. The vapor deposition conditions are as follows: the vacuum degree is below 10 -4 Pa. First, C60 is vapor-deposited, the vapor deposition temperature is 300 - 330 °C, the vapor deposition rate is 0.8 - 1.2 Å / s, and the vapor deposition thickness is 40 - 60 nm. Then, BCP is vapor-deposited, the vapor deposition rate is 0.08 - 0.12 Å / s, and the vapor deposition thickness is 10 - 15 nm.

[0043] The present invention adopts an F 16 CuPc bulk-modified perovskite layer. During the operation of the perovskite solar cell, the perovskite layer absorbs photons, generates excitons and separates them into electrons and holes. At the same time, the unutilized photons are converted into heat energy. The CuPc / F 16 CuPc interface can form a stable charge transfer (CT) complex due to the similar energy levels, which helps to promote charge separation; 16 CuPc and C60 / BCP have good charge transfer characteristics, which can effectively reduce the interfacial carrier recombination; the CT effect of the CuPc / F 16 CuPc interface has thermoelectric ability, which can effectively utilize the small temperature rise during the illumination process and further improve the operating voltage of the solar cell.

[0044] The present invention is illustrated below with specific embodiments.

[0045] Example 1

[0046] Step 1: The transparent conductive glass is ultrasonically cleaned successively with a cleaning agent, deionized water, ethanol, acetone, and isopropanol. Each cleaning time is 15 min. The cleaned substrate is immersed in an isopropanol solution and dried with a nitrogen gun before use.

[0047] Step 2: A CuPc transport layer is prepared on the transparent conductive glass by evaporation coating. The vacuum degree is 7×10 -5 Pa, the evaporation coating temperature is 300 °C, the evaporation coating rate is 0.2 Å / s, and the evaporation coating thickness is 20 nm.

[0048] Step 3: A perovskite thin film is prepared by multi-source evaporation coating. The perovskite component is MAPbI3, and the molar mass ratio of MAI:PbI2:F 16 CuPc of the three substances is 1:1.07:0.08. The evaporation coating conditions are as follows: the vacuum degree is 1×10 -4 Pa, the substrate (substrate) temperature is 75 °C, the evaporation coating temperature of the MAI source is 80 °C, and the evaporation coating rate is 1.4 Å / s; the evaporation coating temperature of the PbI2 source is 300 °C, and the evaporation coating rate is 0.9 Å / s; F 16 The evaporation coating temperature of the CuPc source is 310 °C, and the evaporation coating rate is 0.08 Å / s. The evaporation coating thickness of the thin film is 500 nm. During the evaporation coating process, a crystal oscillator film thickness gauge is used to monitor the thickness and evaporation coating rate of the thin film in real time. After the evaporation coating is completed, it is annealed at 100 °C for 10 minutes in an air environment.

[0049] Step 4: A C60 electron transport layer is prepared on the perovskite thin film by evaporation coating. The vacuum degree is 8×10 -5 Pa, the evaporation coating temperature is 300 °C, the evaporation coating rate is 0.8 Å / s, and the evaporation coating thickness is 50 nm. Subsequently, a BCP electron transport layer is continuously prepared by evaporation coating. The vacuum degree is 5×10 -5 Pa, the evaporation coating rate is 0.1 Å / s, and the evaporation coating thickness is 10 nm.

[0050] Step 5: An Au top electrode is prepared on the electron transport layer by evaporation coating. The evaporation coating vacuum degree is 8.0×10 -5 Pa, the evaporation coating rate in the first stage is about 0.15 Å / s, the time is 20 min, the second stage is about 0.4 Å / s, the time is 25 min, and the thin film thickness is about 70 nm.

[0051] Step 6: Encapsulate with ultra-white glass.

[0052] Example 2

[0053] Step 1: The transparent conductive glass is ultrasonically cleaned successively with a cleaning agent, deionized water, ethanol, acetone, and isopropanol, with each cleaning time being 15 min. The cleaned substrate is immersed in an isopropanol solution and dried with a nitrogen gun before use.

[0054] Step 2: The CuPc transport layer is prepared on the transparent conductive glass by evaporation deposition. The vacuum degree is 7×10 -5 Pa, the evaporation deposition temperature is 300 °C, the evaporation deposition rate is 0.2 Å / s, and the evaporation deposition thickness is 20 nm.

[0055] Step 3: The MAI thin film is prepared by a dual-source evaporation deposition method. The molar mass ratio of MAI:F 16 CuPc of the two substances is 1:0.08. The evaporation deposition conditions are as follows: the vacuum degree is 1×10 -4 Pa, the evaporation deposition temperature of the MAI source is 80 °C, and the evaporation deposition rate is 1.4 Å / s; F 16 The evaporation deposition temperature of the CuPc source is 310 °C, and the evaporation deposition rate is 0.08 Å / s; the evaporation deposition thickness of the thin film is 400 nm. During the evaporation deposition process, a crystal oscillator film thickness gauge is used to monitor the thickness and evaporation deposition rate of the thin film in real time. The substrate is taken out, and the perovskite layer is formed by spin-coating PbI2. The PbI2 precursor is dispersed in a DMF / DMSO mixed solvent. The volume ratio of DMF to DMSO in the mixed solvent is 4:1, the concentration of PbI2 is 1.4 M, the spin-coating rate is 4000 rpm, the time is 30 s, the annealing temperature after spin-coating is 100 °C, and the time is 30 min.

[0056] Step 4: The C60 electron transport layer is prepared on the perovskite thin film by evaporation deposition. The vacuum degree is 8×10 -5 Pa, the evaporation deposition temperature is 300 °C, the evaporation deposition rate is 0.8 Å / s, and the evaporation deposition thickness is 50 nm. Subsequently, the BCP electron transport layer is continuously prepared by evaporation deposition. The vacuum degree is 5×10 -5 Pa, the evaporation deposition rate is 0.1 Å / s, and the evaporation deposition thickness is 10 nm.

[0057] Step 5: The Au back electrode is prepared on the electron transport layer by evaporation deposition. The evaporation deposition vacuum degree is 8.0×10 -5 Pa, the evaporation deposition rate in the first stage is about 0.15 Å / s, the time is 20 min, the evaporation deposition rate in the second stage is about 0.4 Å / s, the time is 25 min, and the thin film thickness is about 70 nm.

[0058] Step 6: Encapsulate with ultra-white glass.

[0059] Comparative Example 1

[0060] Step 1: The transparent conductive glass was ultrasonically cleaned successively with a cleaning agent, deionized water, ethanol, acetone, and isopropanol. The cleaning time for each time was 15 min. After cleaning, the substrate was immersed in an isopropanol solution and dried with a nitrogen gun before use.

[0061] Step 2: A CuPc transport layer was prepared on the transparent conductive glass by evaporation coating. The vacuum degree was 7×10 -5 Pa, the evaporation coating temperature was 300 °C, the evaporation coating rate was 0.2 Å / s, and the evaporation coating thickness was 20 nm.

[0062] Step 3: A perovskite thin film was prepared by one-step spin coating. The perovskite composition was MAPbI3, the concentration was 1.6 mol / L, the spin coating rate was 5000 rpm, the time was 30 s, and isopropanol antisolvent was added dropwise 20 s after coating during the film formation process; the annealing temperature was 100 °C, the time was 30 min, and the thickness was 500 nm.

[0063] Step 4: A C60 electron transport layer was prepared on the perovskite thin film by evaporation coating. The vacuum degree was 8×10 -5 Pa, the evaporation coating temperature was 300 °C, the evaporation coating rate was 0.8 Å / s, and the evaporation coating thickness was 50 nm. Subsequently, a BCP electron transport layer was continuously prepared by evaporation coating. The vacuum degree was 5×10 -5 Pa, the evaporation coating rate was 0.1 Å / s, and the evaporation coating thickness was 10 nm.

[0064] Step 5: An Au back electrode was prepared on the electron transport layer by evaporation coating. The evaporation coating vacuum degree was 8.0×10 -5 Pa, the evaporation coating rate in the first stage was about 0.15 Å / s, the time was 20 min, the evaporation coating rate in the second stage was about 0.4 Å / s, the time was 25 min, and the film thickness was about 70 nm.

[0065] Step 6: Encapsulation was carried out with ultra-clear glass.

[0066] Comparative Example 2

[0067] Step 1: The transparent conductive glass was ultrasonically cleaned successively with a cleaning agent, deionized water, ethanol, acetone, and isopropanol. The cleaning time for each time was 15 min. After cleaning, the substrate was immersed in an isopropanol solution and dried with a nitrogen gun before use.

[0068] Step 2: A CuPc transport layer was prepared on the transparent conductive glass by evaporation coating. The vacuum degree was 7×10 -5 Pa, the evaporation coating temperature was 300 °C, the evaporation coating rate was 0.2 Å / s, and the evaporation coating thickness was 20 nm.

[0069] Step 3: The perovskite thin film is prepared by dual-source evaporation method. The perovskite component is MAPbI3, and the molar mass ratio of MAI:PbI2 is 1:1.07. The evaporation conditions are as follows: the vacuum degree is 1×10 -4 Pa, the substrate temperature is 75°C, the evaporation temperature of the MAI source is 80°C, and the evaporation rate is 1.4 Å / s; the evaporation temperature of the PbI2 source is 300°C, and the evaporation rate is 0.9 Å / s. The thickness of the thin film evaporated is 500 nm. During the evaporation process, a crystal oscillator thickness gauge is used to monitor the thickness and evaporation rate of the thin film in real time. After evaporation, annealing is carried out at 100°C for 10 minutes in an air environment.

[0070] Step 4: The C60 electron transport layer is prepared by evaporation method on the perovskite thin film. The vacuum degree is 8×10 -5 Pa, the evaporation temperature is 300°C, the evaporation rate is 0.8 Å / s, and the evaporation thickness is 50 nm. Subsequently, the BCP electron transport layer is continuously prepared by evaporation method. The vacuum degree is 5×10 -5 Pa, the evaporation rate is 0.1 Å / s, and the evaporation thickness is 10 nm.

[0071] Step 5: The Au back electrode is prepared by evaporation method on the electron transport layer. The evaporation vacuum degree is 8.0×10 -5 Pa. The evaporation rate in the first stage is about 0.15 Å / s, and the time is 20 min. The evaporation rate in the second stage is about 0.4 Å / s, and the time is 25 min. The thickness of the thin film is about 70 nm.

[0072] Step 6: Encapsulate with ultra-white glass.

[0073] Test Example

[0074] For the perovskite solar cells prepared in Example 1 and 2 and Comparative Example 1 and 2, they are detected by a solar light simulator, and the photoelectric conversion efficiency, open-circuit voltage and maximum power point voltage of the perovskite solar cells are tested. The test results are shown in Table 1 below.

[0075] Table 1

[0076] Grouping Photoelectric conversion efficiency Open-circuit voltage / V Maximum power point voltage / V Example 1 21.42％ 1.187 0.973 Example 2 21.16％ 1.169 0.955 Comparative example 1 19.87％ 1.093 0.887 Comparative example 2 18.91％ 1.074 0.856

[0077] According to Table 1, the photoelectric conversion efficiency, open-circuit voltage and voltage at the maximum power point of the perovskite solar cells in Example 1 and 2 are better than those in Comparative Example 1 and 2. In the present invention, the perovskite is modified in the bulk phase by F 16 CuPc to form a CuPc / F 16 CuPc, F 16 CuPc / C60 interface, which promotes charge transfer and separation, reduces carrier recombination. At the same time, by using CuPc / F 16The thermoelectricity of the CuPc interfacial CT effect realizes the effective utilization of a small temperature rise during the illumination process of the battery, improving the operating voltage and efficiency of the solar cell.

[0078] In the description of this specification, the description referring to terms such as "one embodiment", "some embodiments", "examples", "specific examples", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms may be directed to different embodiments or examples. Moreover, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0079] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, "a plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0080] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and purposes of the present invention, and the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A perovskite solar cell, characterized in that: The invention comprises a hole transport layer and an electron transport layer, wherein a bulk-modified perovskite light-absorbing layer is arranged between the hole transport layer and the electron transport layer, and the bulk-modified material of the bulk-modified perovskite light-absorbing layer is F 16 CuPc, the hole transport layer is made of CuPc material.

2. The perovskite solar cell according to claim 1, characterized in that The perovskite solar cell also includes transparent conductive glass, a top electrode and encapsulation glass. The transparent conductive glass, the hole transport layer, the bulk-modified perovskite light-absorbing layer, the electron transport layer, the top electrode and the encapsulation glass are arranged in sequence.

3. The perovskite solar cell according to claim 2, characterized in that The transparent conductive glass includes one of ITO glass, FTO glass and AZO glass; And / or, the electron transport layer includes a C60 layer and a BCP layer; And / or, the top electrode comprises one of Au, Ag, Cu, IWO, and AZO; And / or, the encapsulation glass includes ultra-white glass.

4. A method for preparing a perovskite solar cell, characterized in that: The method for preparing the perovskite solar cell according to any one of claims 1 to 3 comprises the following steps: (a) Preparing a hole transport layer on a transparent conductive glass; (b) preparing a bulk-modified perovskite light-absorbing layer on the surface of the hole transport layer; (c) preparing an electron transport layer on the surface of the bulk-modified perovskite light-absorbing layer.

5. The preparation method according to claim 4, characterized in that: The thickness of the hole transport layer is 15-30 nm.

6. The preparation method according to claim 4, characterized in that: The step (b) comprises mixing AX:BX2:F in a molar ratio of 1:(1-1.1):(0.05-0.1) 16 CuPc is evaporated onto the hole transport layer in one step to form the bulk-modified perovskite light-absorbing layer, wherein A is a formamidine group or a formamidine / methylamine group mainly composed of a methylamine group, B is Pb, and X is one of I, Br, and Cl.

7. The preparation method according to claim 4, characterized in that: The step (b) comprises firstly preparing AX:F in a molar ratio of 1:(0.05-0.1) 16 CuPc is evaporated onto the hole transport layer, and then BX2 is coated by a solution method to form the bulk-modified perovskite light-absorbing layer, wherein A is a formamidine group or a formamidine / methylamine group mainly composed of a methylamine group, B is Pb, and X is one of I, Br, and Cl.

8. The preparation method according to claim 4, characterized in that: In the step (c), a C60 layer is deposited first and then a BCP layer is deposited, wherein the thickness of the C60 layer is 40 to 60 nm, and the thickness of the BCP layer is 10 to 15 nm.

9. The preparation method according to claim 4, characterized in that: The thickness of the bulk-modified perovskite light-absorbing layer is 500-700 nm.

10. Application of the perovskite solar cell according to any one of claims 1 to 3 or the perovskite solar cell prepared by the preparation method according to any one of claims 4 to 9 in the photovoltaic field.

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