Method for preparing hBN ceramic coating on surface of SiCp / 2024Al substrate

Abstract

The invention discloses a method for preparing an hBN ceramic coating on the surface of a SiCp / 2024Al substrate, and belongs to the technical field of surface treatment. The invention discloses a method for preparing an hBN ceramic coating on the surface of a SiCp / 2024Al substrate. The method comprises the steps that the SiCp / 2024Al substrate is polished and ground and then dried after being subjected to ultrasonic cleaning; adding sodium silicate, sodium hydroxide, the hexagonal boron nitride nano-powder and a surface active component into deionized water, and performing ultrasonic dispersion to obtain a composite electrolyte; placing the composite electrolyte in a stainless steel electrolytic bath, and connecting the stainless steel electrolytic bath to a power supply cathode of a plasma discharge system; the pretreated SiCp / 2024Al substrate is connected to the positive electrode of a power source of a plasma discharge system and immersed in the composite electrolyte; and the plasma discharge system operates, under the action of positive and negative pulses, the nano-particles are driven to migrate to the surface of the SiCp / 2024Al substrate and participate in reaction co-deposition, and the compact and uniform large-thickness high-electrical-insulation hBN ceramic coating grows on the surface of the substrate.

Description

Technical Field

[0001] The present invention belongs to the technical field of surface treatment, and particularly relates to a method for preparing an hBN ceramic coating on the surface of a SiC p / 2024Al substrate. Background Art

[0002] With the rapid development of the microelectronics industry, packaging materials and preparation technologies have become research hotspots. Especially in the computer industry, with the increasing integration, operating speed, and power, the requirements for packaging materials are becoming more and more stringent. Traditional heat dissipation substrates face many problems: metal heat dissipation substrates (such as aluminum alloys, copper alloys, etc.) have mismatched thermal expansion coefficients with chips, which easily cause thermal stress and lead to delamination; organic heat dissipation substrates (such as polyimides, epoxy resins, etc.) have poor stability and thermal conductivity in high-temperature or high-power environments; ceramic heat dissipation substrates (such as aluminum nitride, silicon nitride, etc.) are difficult to process and have high costs. Therefore, the limitations of traditional materials restrict the development of electronic packaging technology.

[0003] SiC p / 2024Al composite material as a new type of heat dissipation substrate material has obvious advantages. First, the addition of silicon carbide particles makes up for the deficiency of poor thermal conductivity of aluminum alloys. At the same time, by reasonably designing the content and particle size of silicon carbide particles, the thermal expansion coefficient can be adjusted, reducing the thermal stress with the chip and reducing thermal mismatch. In addition, this material has good mechanical strength and thermal deformation resistance, and shows excellent structural stability under high-temperature and high-power conditions. Compared with traditional materials, SiC p / 2024Al composite material has lower processing difficulty and cost, and is suitable for large-scale production. In high-power electronic devices, such as insulated gate bipolar transistor modules, power converters, high-frequency power modules, solar inverters, and electric vehicle charging systems, SiC p / 2024Al has become a key heat dissipation substrate due to its excellent thermal management and mechanical properties. However, the traditional power module is a multi-layer structure connected by brazing longitudinally, which consists of a heat dissipation substrate, a solder layer, a ceramic copper clad laminate, a solder layer, and a chip in sequence. The packaging process is complex, and the difference in thermal expansion coefficients between multi-layer materials easily leads to delamination and fracture, thereby weakening the electrical insulation performance and heat dissipation ability, and seriously affecting the reliability and life of the device. Therefore, it is urgent to explore new packaging technologies and material designs to improve the connection reliability and performance stability. Summary of the Invention

[0004] Aiming at the deficiencies of the prior art, the purpose of the present invention is to provide a method for preparing an hBN ceramic coating on the surface of a SiC p / 2024Al substrate, which solves the problems in the prior art.

[0005] The purpose of the present invention can be achieved by the following technical solutions:

[0006] A method for preparing hBN ceramic coating on the surface of SiC p / 2024Al substrate, comprising the following steps:

[0007] Polish and grind the SiC p / 2024Al substrate, then ultrasonically clean and dry it to obtain the pretreated SiC p / 2024Al substrate;

[0008] Add sodium silicate, sodium hydroxide, hexagonal boron nitride nanopowder and surface active components to deionized water, and ultrasonically disperse to obtain a composite electrolyte;

[0009] Place the composite electrolyte in a stainless-steel electrolytic cell, and connect the stainless-steel electrolytic cell to the negative electrode of the power supply of the plasma discharge system; connect the pretreated SiC p / 2024Al substrate to the positive electrode of the power supply of the plasma discharge system and immerse it in the composite electrolyte; operate the plasma discharge system, and under the action of positive and negative pulses, drive the nanoparticles to migrate to the SiC p / 2024Al substrate surface, participate in reactive co-deposition to obtain hBN ceramic coating.

[0010] Furthermore, the plasma discharge system operates under the conditions of a positive pulse voltage of 450V - 650V, a frequency of 500Hz - 1000Hz, a positive duty cycle of 10% - 20% and the temperature of the composite electrolyte is maintained at 30°C - 40°C. At the same time, introduce a negative pulse voltage of 40 - 100V, a positive and negative pulse ratio of 1:1, and a negative duty cycle of 10% - 20% to induce low-temperature soft plasma discharge phenomenon, drive the nanoparticles to migrate to the SiC p / 2024Al substrate surface and participate in reactive co-deposition.

[0011] Furthermore, the SiC p / 2024Al substrate includes: 2024 aluminum alloy and silicon carbide particles, and the volume fraction of the silicon carbide particles is 45% - 55%.

[0012] Furthermore, the particle size of the silicon carbide particles is 3μm - 60μm.

[0013] Furthermore, the 2024 aluminum alloy composition includes: 3.8 - 4.9wt% of copper element, 0.5wt% of silicon element, 0.30 - 1.0wt% of manganese element, 1.2 - 1.8wt% of magnesium element, 0.25wt% of zinc element, 0.10wt% of chromium element, and the rest is aluminum element.

[0014] Further, in the composite electrolyte, the concentration of sodium silicate is 1 g / L to 20 g / L, the concentration of sodium hydroxide is 1 g / L to 2 g / L, the concentration of hexagonal boron nitride nanopowder is 20 g / L to 40 g / L, and the concentration of the surface active component is 1 g / L to 4 g / L.

[0015] Further, the surface active component is one or a mixture of more of: ethylenediaminetetraacetic acid, a pH regulator, and sodium dodecylbenzenesulfonate.

[0016] Further, the particle size of the hexagonal boron nitride nanopowder is 100 nm to 500 nm.

[0017] Further, the time for reactive co-deposition on the surface of the SiC p / 2024Al substrate is 3 to 6 minutes.

[0018] An electronic packaging material, characterized in that it is obtained by using the method for preparing an hBN ceramic coating on the surface of a SiC p / 2024Al substrate described above.

[0019] Advantages of the present invention:

[0020] 1. Based on a composite electrolyte system, the present invention adopts a low-temperature soft plasma discharge synchronous nanopowder reactive co-deposition technology to construct an hBN ceramic coating with high electrical insulation characteristics on the surface of a SiC p / 2024Al substrate. By improving the micro-arc oxidation technology, the negative pulse voltage / current is precisely regulated in the bipolar pulse mode to induce a low-temperature soft plasma discharge state on the surface of the substrate. In the composite electrolyte containing highly surface-active hBN nanopowder, the synergistic effect of the transient high-intensity electric field and thermal field drives the nanoparticles to migrate to the surface of the substrate and react co-deposit. The strong electric field in the plasma discharge region and the micro-region environment formed by the high-voltage discharge channel provide sufficient energy for the migration, surface activation, and physical and chemical reactions of hBN nanoparticles, significantly accelerating the deposition and sintering processes of the particles, thereby in-situ growing a high-electrical-insulation hBN ceramic coating with excellent densification, uniformity, and large thickness.

[0021] 2. The present invention can directly prepare a functional ceramic layer on the surface of complex-shaped or large-area thin-walled components, without the need for cutting, grinding, welding, or bonding steps of traditional ceramic plates, and omitting complex subsequent processing and assembly processes.

[0022] 3. The present invention proposes a preparation method with high efficiency, low cost, and short production cycle, with flexible and controllable processes, and capable of realizing large-scale production. On the SiC pConstructing an hBN ceramic layer with excellent performance on the surface of a SiC / 2024Al substrate, its remarkable electrical insulation characteristics provide an innovative solution for high-power and high-integration module packaging materials. This method not only effectively improves the surface functionalization level of the substrate, but also lays a technical foundation for the industrial application of related materials, which is of great significance for promoting the technological upgrading in the field of integrated circuit packaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0024] Figure 1 It is the macroscopic morphology diagram of the thick high electrical insulation hBN ceramic coating constructed on the surface of the SiC p / 2024Al substrate in Examples 1 to 4;

[0025] Figure 2 It is the cross-sectional morphology, porosity statistics and thickness display diagram of the thick high electrical insulation hBN ceramic coating constructed on the surface of the SiC p / 2024Al substrate in Examples 1 to 4;

[0026] Figure 3 It is the electrical insulation performance statistical diagram of the thick high electrical insulation hBN ceramic coating constructed on the surface of the SiC p / 2024Al substrate in Examples 1 to 4;

[0027] Figure 4 It is the bandgap width analysis diagram of the thick high electrical insulation hBN ceramic coating constructed on the surface of the SiC p / 2024Al substrate in Examples 1 to 4. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0029] A method for preparing an hBN ceramic coating on the surface of a SiC p / 2024Al substrate, comprising the following steps:

[0030] S1, preprocessing of the SiC p / 2024Al substrate;

[0031] For the characteristic of high hardness of the metal substrate reinforced with medium and high volume fraction of silicon carbide, a polishing machine is used to polish the SiC p / 2024Al substrate; subsequently, ultrasonic cleaning is carried out using deionized water and absolute ethanol to effectively remove residual stains on the surface, ensure the cleanliness of the substrate surface, and finally obtain the pretreated SiC p / 2024Al substrate after drying;

[0032] S2, preparing a composite electrolyte containing highly surface-active ceramic nanopowders;

[0033] Sodium silicate, sodium hydroxide, hexagonal boron nitride nanopowders and surface-active components are added to deionized water and ultrasonic dispersed for 30 minutes to obtain the composite electrolyte.

[0034] S3, low-temperature soft plasma discharge synchronous nanopowder reaction co-deposition;

[0035] In the plasma discharge system, a two-electrode configuration is adopted. Among them, the composite electrolyte containing highly surface-active ceramic nanopowders is placed in a stainless-steel electrolytic cell, and the stainless-steel electrolytic cell is connected to the negative electrode of the power supply and serves as the cathode; the pretreated SiC p / 2024Al substrate is connected to the positive electrode of the power supply and serves as the anode, and is immersed in the composite electrolyte;

[0036] The plasma discharge system operates under special conditions of a forward pulse voltage of 450V - 650V, a frequency of 500Hz - 1000Hz, a forward duty ratio of 10% - 20%, and the electrolyte temperature maintained at 30°C - 40°C. At the same time, a negative pulse voltage of 40 - 100V, a positive-negative pulse ratio of 1:1, and a negative duty ratio of 10% - 20% are introduced to induce the low-temperature soft plasma discharge phenomenon. The high-temperature and high-pressure field formed by local plasma discharge drives the nanoparticles to migrate to the surface of the SiC p / 2024Al substrate and participate in the reaction co-deposition; through deposition and sintering, a dense hBN ceramic coating with high electrical insulation performance and large thickness is successfully prepared on the substrate surface.

[0037] Among them, in S1, the SiC p / 2024Al substrate contains 2024 aluminum alloy and silicon carbide particles, and the volume fraction of silicon carbide particles is 45% - 55%; among them, the particle size of the silicon carbide particles is 3μm - 60μm; the components of the 2024 aluminum alloy are: copper element 3.8 - 4.9wt%, silicon element 0.5wt%, manganese element 0.30 - 1.0wt%, magnesium element 1.2 - 1.8wt%, zinc element 0.25wt%, chromium element 0.10wt%, and the rest is aluminum element.

[0038] In S2, the concentration of sodium silicate in the composite electrolyte is 1 g / L to 20 g / L, the concentration of sodium hydroxide is 1 g / L to 2 g / L, the concentration of hexagonal boron nitride nanopowder is 20 g / L to 40 g / L, and the concentration of the surface active component is 1 g / L to 4 g / L; the surface active component is one or a mixture of more of: ethylenediaminetetraacetic acid, pH regulator, and sodium dodecylbenzenesulfonate; the pH regulator is sodium borate, boric acid, etc.

[0039] In S2, the particle size of the hexagonal boron nitride nanopowder is 100 nm to 500 nm.

[0040] In S3, using a plasma discharge system, on the SiC p / 2024Al substrate surface, the reaction co-deposition time is 3 to 6 min.

[0041] In S3, an electric stirrer is assembled in the composite electrolyte throughout the experiment (in a stainless steel electrolytic cell) and stirred at a constant speed of 200 - 800 r / min;

[0042] In S3, the cross-section of the hBN ceramic coating is a single-layer structure, with a thickness of 50 - 200 μm, its electrical insulation performance ≥ 1400 V, and the band gap can reach 5 eV.

[0043] The preparation process is specifically described below through the following examples;

[0044] Example 1

[0045] A method for preparing an hBN ceramic coating on the surface of a SiC p / 2024Al substrate, comprising the following steps:

[0046] S1, pretreatment:

[0047] In view of the high hardness of the medium and high volume fraction silicon carbide reinforced metal substrate, a polishing machine is used for polishing and grinding treatment; subsequently, deionized water and absolute ethanol are used for ultrasonic cleaning to effectively remove surface residual stains and ensure the cleanliness of the SiC p / 2024Al substrate surface. Finally, the pretreated substrate is obtained after drying.

[0048] The SiC p / 2024Al substrate in S1 is: a silicon carbide particle-reinforced 2024 aluminum-based composite substrate containing 45% volume fraction of silicon carbide particles, where the particle size of the silicon carbide particles is 3 μm to 60 μm. The composition of the 2024 aluminum alloy is: 3.8 wt% copper element, 0.5 wt% silicon element, 0.30 wt% manganese element, 1.2 wt% magnesium element, 0.25 wt% zinc element, 0.10 wt% chromium element, and the remaining aluminum element;

[0049] S2. Prepare a composite electrolyte containing highly surface-active ceramic nanopowders:

[0050] Add sodium silicate, sodium hydroxide, hexagonal boron nitride nanopowders, and a surface-active component to deionized water and ultrasonically disperse for 30 minutes to obtain the composite electrolyte;

[0051] In S2, the concentration of sodium silicate in the composite electrolyte is 20 g / L, the concentration of sodium hydroxide is 1.2 g / L, the concentration of hexagonal boron nitride nanopowders is 40 g / L, the concentration of ethylenediaminetetraacetic acid is 1.2 g / L, the concentration of the pH regulator (sodium borate + boric acid) is 1.2 g / L, and the concentration of sodium dodecylbenzenesulfonate is 1.2 g / L;

[0052] S3. Low-temperature soft plasma discharge synchronous nanopowder reaction co-deposition:

[0053] The plasma discharge system adopts a two-electrode configuration, where the composite electrolyte containing highly surface-active ceramic nanopowders is placed in a stainless-steel electrolytic cell. The pretreated substrate is connected to the positive pole of the power supply as the anode and immersed in the composite electrolyte; the stainless-steel electrolytic cell is connected to the negative pole of the power supply as the cathode. The system operates under special conditions of a positive pulse voltage of 550 V, a frequency of 500 Hz, a positive duty cycle of 10%, and the electrolyte temperature maintained at 30 °C - 40 °C. At the same time, a negative pulse voltage of 80 V, a positive-negative pulse ratio of 1:1, and a negative duty cycle of 10% are introduced to induce the low-temperature soft plasma discharge phenomenon. The high-temperature and high-pressure field formed by local plasma discharge drives the nanoparticle migration to the substrate surface and participates in the reaction co-deposition. After deposition and sintering, a dense hBN ceramic coating with high electrical insulation performance and large thickness is successfully prepared on the substrate surface.

[0054] In S3, the negative pulse voltage is set at 80 V, the positive duty cycle is set at 10%, the negative duty cycle is set at 10%, and the treatment time is set at 3 minutes.

[0055] Example 2

[0056] Compared with Example 1, the difference in this example is that the treatment time in S3 is set to 4 minutes, and the remaining steps and parameters are the same as those in Example 1.

[0057] Example 3

[0058] Compared with Example 1, the difference in this example is that the treatment time in S3 is set to 5 minutes, and the remaining steps and parameters are the same as those in Example 1.

[0059] Example 4

[0060] Compared with Example 1, the difference in this example is that the treatment time in S3 is set to 6 minutes, and the remaining steps and parameters are the same as those in Example 1.

[0061] In Examples 2 to 4, the negative pulse voltage was precisely regulated in the bipolar pulse mode to induce a low-temperature soft plasma discharge state on the substrate surface. The strong electric field and the microenvironment of the high-voltage channel in the discharge region provided sufficient energy for the migration, activation, and physical and chemical reactions of hBN nanoparticles, significantly accelerating the deposition and sintering processes. As the processing time extended, more nanoparticles participated in the reaction co-deposition, and a highly electrically insulating hBN ceramic coating with excellent densification, good uniformity, and large thickness was gradually in-situ grown.

[0062] Experimental tests

[0063] In Examples 1 to 4, on the SiC p / 2024Al substrate surface, the macroscopic morphology of the hBN ceramic coating is as Figure 1 shown; from Figure 1 it can be seen that within 3 to 6 minutes of processing, the SiC p / 2024Al substrate surface was uniformly covered with a complete white coating, and the coating surface presented a milky white characteristic consistent with that of hBN nanoparticles, indicating that the nanoparticles successfully participated in the coating formation process.

[0064] In Examples 1 to 4, on the SiC p / 2024Al substrate surface, the cross-sectional morphology, porosity statistics, and thickness of the hBN ceramic coating are as Figure 2 shown; Figure 2 a and a1 are the cross-sectional morphology and open pore area statistics of the coating obtained by reaction co-deposition for 3 min, Figure 2 b and b1 are the cross-sectional morphology and open pore area statistics of the coating obtained by reaction co-deposition for 4 min, Figure 2 c and c1 are the cross-sectional morphology and open pore area statistics of the coating obtained by reaction co-deposition for 5 min, Figure 2 d and d1 are the cross-sectional morphology and open pore area statistics of the coating obtained by reaction co-deposition for 6 min, Figure 2 e is the statistical result of the coating thickness and porosity.

[0065] From Figure 2 it can be seen that as the processing time extended to 4 minutes, the cross-sectional porosity decreased significantly from 23.4% to 10.9%, and the nanoparticles were deposited and sintered to form a coating at a relatively fast rate, and the thickness increased rapidly to more than 90 μm. However, when the time extended to 5 minutes and 6 minutes, the cross-sectional porosity increased slightly, to 12.8% and 14.6% respectively. This is related to the increased difficulty of breakdown discharge after the coating thickened, and the discharge tended to concentrate in the weak areas, resulting in an increase in pore and crack defects. By 6 minutes, the coating thickness increased steadily to more than 130 μm, but with further extension of the time, the coating might be damaged and peeled off due to ablation.

[0066] In Examples 1 to 4, on the SiCp The electrical insulation properties of the hBN ceramic coating formed on the surface of the 2024Al substrate are as follows Figure 3 shown; it can be seen from Figure 3 that: as the processing time prolongs, the significant increase in the coating thickness remarkably improves its electrical insulation properties; when processed for 6 minutes, the coating thickness rapidly increases to more than 130 μm, and the breakdown voltage is also as high as more than 1400 V.

[0067] In Examples 1 to 4, the band gaps of the hBN ceramic coatings formed on the surface of the SiC p / 2024Al substrate are as follows Figure 4 shown; it can be seen from Figure 4 that: the coating exhibits obvious absorption characteristics in the ultraviolet region of the spectrum with a wavelength range of 200 - 300 nm. The calculation results by the Tauc method show that the band gap of the coating can reach 5 eV, indicating that it is a wide-bandgap insulating material with excellent electrical insulation and high-temperature stability. This band gap makes it have potential application value in the field of high-power electronic packaging.

[0068] Principle of the present invention:

[0069] The plasma discharge system in the present invention adopts a two-electrode configuration, in which a composite electrolyte containing highly surface-active ceramic nanopowders is placed in a stainless-steel electrolytic cell. The pretreated substrate is connected to the positive electrode of the power supply and serves as the anode, and is immersed in the composite electrolyte; the stainless-steel electrolytic cell is connected to the negative electrode of the power supply and serves as the cathode. By using the low-temperature soft plasma discharge technology, through the synergistic effect of transient high-intensity electric and thermal fields, the reaction co-deposition of nanoparticles is driven on the surface of the substrate, and a dense, uniform and thick hBN ceramic coating is in-situ grown. In the plasma discharge region, the microenvironment formed by the strong electric field and the high-voltage discharge channel provides sufficient energy for the migration, surface activation and physical and chemical reactions of hBN nanoparticles, accelerating the deposition and sintering processes of the nanoparticles and promoting the rapid growth of the coating. At the same time, the high-temperature and high-pressure transient conditions generated during the discharge process induce physical and chemical reactions between the surface of the substrate and the anions and hBN nanoparticles in the electrolyte, and partially generate molten oxides. These molten oxides form an amorphous glass phase through rapid cooling and quenching after the discharge ends, which can enhance the binding force between the nanoparticles and the overall mechanical strength of the coating. In the present invention, during the reaction co-deposition process of hBN nanoparticles, it is necessary to maintain the electrolyte temperature under the special condition of 30 - 40 °C in order to deposit and sinter a uniform and complete hBN ceramic coating on the surface of the SiC p / 2024Al substrate.

[0070] In the description of this specification, the descriptions referring to terms such as "one embodiment", "example", "specific example", etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0071] The foregoing has shown and described the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments, and the above embodiments and the descriptions in the specification only illustrate the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention will have various changes and improvements, and these changes and improvements all fall within the scope of the present invention claimed.

Claims

1. A SiC p / A method for preparing a hBN ceramic coating on a 2024Al substrate surface, characterized in that: The following steps are involved: For SiC p / 2024Al substrate was polished and then ultrasonically cleaned and dried to obtain the pre-treated SiC p / 2024Al substrate; Sodium silicate, sodium hydroxide, hexagonal boron nitride nanopowder and surfactant components are added into deionized water and ultrasonically dispersed to obtain a composite electrolyte; The composite electrolyte is placed in a stainless steel electrolytic cell, which is connected to the negative electrode of the power supply of the plasma discharge system; the pretreated SiC p The 2024Al substrate is connected to the positive electrode of the plasma discharge system and immersed in the composite electrolyte. The plasma discharge system is running, and under the action of positive and negative pulses, the nanoparticles are driven to migrate to the SiC p / 2024Al substrate surface, participates in reaction co-deposition to obtain hBN ceramic coating.

2. A method according to claim 1 in SiC p / A method for preparing a hBN ceramic coating on a 2024Al substrate surface, characterized in that: The plasma discharge system operates under the conditions of positive pulse voltage of 450V-650V, frequency of 500Hz-1000Hz, positive duty cycle of 10%-20% and composite electrolyte temperature maintained at 30℃-40℃. At the same time, negative pulse voltage of 40-100V, positive-negative pulse ratio of 1:1 and negative duty cycle of 10%-20% are introduced to induce low-temperature soft plasma discharge phenomenon and drive the nanoparticles to migrate to SiC p / 2024Al substrate surface and participate in reaction co-deposition.

3. A method according to claim 1 in SiC p / A method for preparing a hBN ceramic coating on a 2024Al substrate surface, characterized in that: SiC p The / 2024Al substrate includes: 2024 aluminum alloy and silicon carbide particles, and the volume fraction of the silicon carbide particles is 45%-55%.

4. A method according to claim 3 in SiC p / A method for preparing a hBN ceramic coating on a 2024Al substrate surface, characterized in that: The particle size of the silicon carbide particles is 3 μm to 60 μm.

5. The method according to claim 3 in SiC p / A method for preparing a hBN ceramic coating on a 2024Al substrate surface, characterized in that: The 2024 aluminum alloy composition includes: 3.8-4.9wt% copper, 0.5wt% silicon, 0.30-1.0wt% manganese, 1.2-1.8wt% magnesium, 0.25wt% zinc, 0.10wt% chromium, and the rest is aluminum.

6. The method according to claim 1 in SiC p / A method for preparing a hBN ceramic coating on a 2024Al substrate surface, characterized in that: In the composite electrolyte, the concentration of sodium silicate is 1g / L-20g / L, the concentration of sodium hydroxide is 1g / L-2g / L, the concentration of hexagonal boron nitride nanopowder is 20g / L-40g / L, and the concentration of the surfactant component is 1g / L-4g / L.

7. A method according to claim 1 or 6 in SiC p / A method for preparing a hBN ceramic coating on a 2024Al substrate surface, characterized in that: The surface active component is a mixture of one or more of ethylenediaminetetraacetic acid, a pH regulator and sodium dodecylbenzene sulfonate.

8. A method according to claim 1 or 6 in SiC p / A method for preparing a hBN ceramic coating on a 2024Al substrate surface, characterized in that: The particle size of the hexagonal boron nitride nanopowder is 100nm to 500nm.

9. The method according to claim 1 in SiC p / A method for preparing a hBN ceramic coating on a 2024Al substrate surface, characterized in that: In SiC p The reaction co-deposition time on the surface of the / 2024Al substrate is 3 to 6 minutes.

10. An electronic packaging material, characterized in that: Using the method described in any one of claims 1 to 9 in SiC p A method for preparing hBN ceramic coating on the surface of / 2024Al substrate is obtained.

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