Wavelength conversion device, preparation method thereof and light-emitting device
By using vapor deposition method to form the first metal transition layer, reflective layer and wavelength conversion layer on the substrate of the wavelength conversion device, the connection quality and heat dissipation problems caused by the bonding layer defects in the prior art are solved, and a high thermal stability and high reliability thermal conductive film layer interface is achieved.
Patent Information
- Application Number
- CN202311723086.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-14
- Publication Date
- 2025-06-24
AI Technical Summary
The existing wavelength conversion device has defects such as pores and cracks in the use of the adhesive layer, which affects the quality of the connection. The porous structure of sintered silver is difficult to detect internal voids, which affects heat dissipation and interlayer adhesion, resulting in problems such as shedding, reduced efficiency, failure and reduced reliability.
The first metal transition layer, reflective layer and wavelength conversion layer are formed on the substrate in turn by vapor deposition to form a stable interface of the heat conduction film layer to achieve high thermal stability and high reliability, and avoid the hollowing problem of using traditional adhesives.
High thermal stability and high reliability are achieved, strong interlayer adhesion, thin thickness and small thermal resistance, which significantly improves the thermal conductivity and production efficiency of the wavelength conversion device.
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Figure CN120194283A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of light sources, and particularly relates to a wavelength conversion device, a preparation method thereof, and a light emitting device. Background Art
[0002] Currently, laser fluorescence conversion light sources are widely used in devices such as LED lighting, stage lights, vehicle lights, and searchlights, and have advantages such as high brightness and high temperature stability. Among them, the wavelength conversion device is the core component of the laser fluorescence conversion light source, and its performance plays a decisive role in the quality of the laser fluorescence conversion light source.
[0003] Currently, a common packaging method for the wavelength conversion device is as follows: prepare a fluorescent layer (single-phase ceramic or composite ceramic), polish one surface of the fluorescent layer, and form a metal reflection layer on the polished surface of the fluorescent layer through physical sputtering or evaporation plating processes; then place the surface with the attached reflection layer on a metal heat dissipation substrate coated with a low-temperature curing silver paste, and place the entire device in a sintering furnace for low-temperature curing bonding, or bond through a solder to achieve the connection between the substrate layer and the fluorescence conversion layer. The metal heat dissipation substrate has excellent thermal conductivity. Therefore, the bonding layer, as a connection layer, has an important impact on the excellent heat dissipation performance from the fluorescent layer to the metal substrate layer. The bonding layer is usually a welding layer or a sintered silver layer. Among them, for the welding layer, defects such as pores and cracks may be generated during the welding process, affecting the connection quality, and the tolerance performance of the materials to be welded limits the selection of solder types. When sintered silver is used as the bonding layer, compared with ordinary solders, it has the advantages of high thermal conductivity and high electrical conductivity. Sintered silver has the characteristic of low-temperature sintering, without the need for high-pressure and high-temperature sintering. However, the sintering process is long, the production efficiency is low, and the sintered connection layer is a porous structure, making it difficult to detect internal voids. If there are many and large voids, it is not conducive to heat dissipation and interlayer adhesion. Therefore, problems such as peeling off, efficiency reduction, failure, and reliability reduction will occur in the actual application of this structure. Summary of the Invention
[0004] The purpose of the present application is to provide a wavelength conversion device, a preparation method thereof, and a light emitting device to improve the above problems.
[0005] In a first aspect, an embodiment of the present application provides a wavelength conversion device, including a substrate, a first metal transition layer, a reflection layer, and a wavelength conversion layer. The first metal transition layer is connected to the surface of the substrate, the reflection layer is connected to the surface of the first metal transition layer away from the substrate, and the wavelength conversion layer is disposed on the surface of the reflection layer away from the first metal transition layer.
[0006] In an implementation manner, the wavelength conversion device further includes an oxide transition layer, and the oxide transition layer is disposed between the wavelength conversion layer and the reflection layer.
[0007] In one embodiment, the oxide transition layer is selected from at least one of aluminum oxide and silicon oxide.
[0008] In one embodiment, the wavelength conversion device further includes a second metal transition layer disposed between the oxide transition layer and the reflective layer.
[0009] In one embodiment, the second metal transition layer is an aluminum layer.
[0010] In one embodiment, the first metal transition layer is formed of at least one of nickel, nickel-chromium alloy, and titanium.
[0011] In one embodiment, the first metal transition layer, the reflective layer, and the wavelength conversion layer are respectively formed by chemical vapor deposition.
[0012] In one embodiment, the thickness of the first metal transition layer 150 is 100 nm - 150 nm.
[0013] In one embodiment, the thickness of the reflective layer is 80 nm - 120 nm.
[0014] In one embodiment, the thickness of the wavelength conversion layer is 1500 - 5000 nm.
[0015] In one embodiment, the second metal transition layer is formed by chemical vapor deposition.
[0016] In one embodiment, the thickness of the second metal transition layer 350 is 5 - 20 nm.
[0017] In a second aspect, an embodiment of the present application further provides a method for manufacturing a wavelength conversion device, including: providing a substrate, and sequentially depositing and forming a first metal transition layer on one side surface of the substrate by chemical vapor deposition; forming a reflective layer on a surface of the first metal transition layer away from the substrate, and forming a wavelength conversion layer on a surface of the reflective layer away from the first metal transition layer.
[0018] In one embodiment, before forming the reflective layer, an oxide transition layer is formed on a surface of the first metal transition layer away from the substrate by chemical vapor deposition, and then the reflective layer is formed on a surface of the oxide transition layer away from the first metal transition layer.
[0019] In one embodiment, before forming the reflective layer, a second metal transition layer is formed on a surface of the oxide transition layer away from the first metal transition layer by chemical vapor deposition, and then the reflective layer is formed on a surface of the second metal transition layer away from the oxide transition layer.
[0020] In a third aspect, an embodiment of the present application further provides a light-emitting device, which includes an excitation light source and the above-mentioned wavelength conversion device. The excitation light source emits excitation light to excite the wavelength conversion device to emit stimulated light.
[0021] For the wavelength conversion device and the light-emitting device provided by the present application, there is no need to provide a separate adhesive layer. The first metal transition layer, the reflective layer, the substrate, and the wavelength conversion layer are bonded together by chemical bonds to form a stable interface of the heat conduction film layer, achieving high thermal stability and high reliability, with strong interlayer adhesion, thin thickness, and small thermal resistance, which can significantly improve the heat conduction ability of the wavelength conversion device.
[0022] For the preparation method of the wavelength conversion device provided by the present application, starting from the substrate, the first metal transition layer, the reflective layer, and the wavelength conversion layer are formed by epitaxial growth using a vapor deposition method. The first metal transition layer, the reflective layer, the substrate, and the wavelength conversion layer are bonded together by chemical bonds, without the use of traditional adhesives, to form a stable interface of the heat conduction film layer. The prepared wavelength conversion device can achieve high thermal stability and high reliability, with strong interlayer adhesion, thin thickness, and small thermal resistance.
[0023] These aspects or other aspects of the present application will be more clearly understood in the following description of the embodiments. Description of the Drawings
[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.
[0025] Figure 1 It is a schematic structural diagram of a wavelength conversion device in the prior art shown in the present application.
[0026] Figure 2 It is a schematic structural diagram of a wavelength conversion device provided in Embodiment 1 of the present application.
[0027] Figure 3 It is a schematic structural diagram of a wavelength conversion device provided in Embodiment 2 of the present application.
[0028] Figure 4 It is a schematic structural diagram of a light-emitting device provided in Embodiment 3 of the present application. Detailed Embodiments
[0029] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts belong to the scope of protection of the present application.
[0030] Currently, a wavelength conversion device is usually composed of a substrate layer, an adhesive layer, a reflective layer, and a light-emitting layer stacked in sequence. For the wavelength conversion device prepared in this way, the adhesion between layers and the matching of the coefficient of thermal expansion are unstable. The adhesion between layers is poor, and the light-emitting layer is prone to peeling off from the heat dissipation substrate. Moreover, the interlayer structure is complex, and the difficulty of matching the coefficient of thermal expansion is higher. During the use of the wavelength conversion device, as the ambient temperature changes, the materials between layers will shrink and expand to varying degrees, ultimately leading to device failure, which has an adverse impact on the reliability and long-term stability of the wavelength conversion device.
[0031] Figure 1 A wavelength conversion device in the prior art is shown, where the wavelength conversion device includes a fluorescent layer 1, a metal reflective layer 2, a protective layer 3, an adhesive layer 4, and a heat dissipation substrate layer 5 stacked from top to bottom in sequence. Among them, the adhesive layer 4 plays the role of bonding the fluorescent layer 1 and the heat dissipation substrate layer 5, and is usually bonded with solder or silver glue. The wavelength conversion device prepared by this method has many film layers, a cumbersome preparation process, and high requirements for equipment.
[0032] Embodiment 1
[0033] Refer to Figure 2 , this embodiment provides a wavelength conversion device 10, including a substrate 100, a first metal transition layer 150, a reflective layer 200, and a wavelength conversion layer 300. Among them, the first metal transition layer 150 is connected to one side surface of the substrate 100, the reflective layer 200 is connected to the surface of the first metal transition layer away from the substrate 100, and the wavelength conversion layer 300 is disposed on the surface of the reflective layer 200 away from the first metal transition layer 150.
[0034] Among them, in this embodiment, the substrate 100 can be a metal substrate 100. The metal substrate has good processability and is easy to be processed into the required shape. Moreover, the metal substrate can form a closer and more stable chemical bond with the first metal transition layer 150, thereby improving the bonding force between the substrate 100 and the first metal transition layer 150. In some other embodiments, the substrate 100 can also be a ceramic substrate 100, such as ceramic substrates 100 of aluminum nitride, silicon carbide, silicon nitride, aluminum oxide, etc. These ceramic substrates 100 have excellent thermal conductivity and high temperature resistance, as well as the advantage of matching the coefficient of thermal expansion with that of the fluorescent ceramic. The substrate 100 can also be a sapphire substrate, etc. This embodiment does not make a limitation thereto.
[0035] The first metal transition layer 150 can be formed of a metal material or a metal alloy material. In one embodiment, the first metal transition layer 150 can be formed of at least one of nickel, nickel-chromium alloy, and titanium. In this embodiment, the first metal transition layer 150 is a nickel layer. The thickness of the first metal transition layer 150 can be 100 nm - 150 nm. By setting the thickness of the first metal transition layer to be relatively low, the influence of factors such as voids and pores inside the first metal transition layer on heat transfer can be avoided when its thickness increases. The interlayer thickness is small and the thermal resistance is small, and the chemical bonding adhesion between the first metal transition layer and each layer is strong. Of course, in some other embodiments, the thickness of the first metal transition layer 150 can also be other values, and this embodiment does not limit this.
[0036] The reflective layer 200 can be used to reflect the laser light formed by the conversion of the wavelength conversion layer 300, and can also be used to reflect the excitation light. At the same time, the reflective layer 200 is also used to tightly connect the first metal transition layer 150 and the wavelength conversion layer 300. In addition, when part of the excitation light irradiates on the wavelength conversion layer 300, the reflective layer 200 can also quickly transfer the part of the heat overflowing to the substrate 100 for heat dissipation. The reflective layer 200 can be a metal reflective film layer. For example, the reflective layer 200 can mainly include silver. The thickness of the reflective layer 200 can be 80 nm - 120 nm. Compared with the thickness of the reflective layer in the prior art reaching 150 - 300 nm, or even a thicker reflective layer thickness, the embodiment of the present application reduces the thickness of the reflective layer, reduces the heat conduction distance from the wavelength conversion layer to the substrate, improves the heat conduction efficiency while reducing the thickness of the overall wavelength conversion device, which is beneficial to the miniaturization of the overall structure. Of course, in some other embodiments of the present application, the thickness of the reflective layer 200 can also be other values, and this embodiment does not limit this. It can be understood that in some other embodiments, the reflective layer 200 can also be composed of other metals, such as gold, aluminum, etc., and this embodiment does not limit this.
[0037] The wavelength conversion layer 300 can be a fluorescent ceramic layer. The fluorescent ceramic layer can be a Ce:YAG, Ce:LuAG single-phase ceramic or an Al2O3-Ce:YAG, Al2O3-Ce:LuAG composite ceramic, and this embodiment does not make specific limitations on this. The wavelength conversion layer 300 can convert the excitation light into laser light under the excitation of the excitation light. In a more specific embodiment, the laser light can be blue light, and the wavelength conversion layer 300 can convert the blue light into yellow fluorescence.
[0038] By providing the first metal transition layer 150, the internal stress formed due to different crystal structures of different functional film layers can be gradually relaxed, thereby reducing the occurrence of defects such as cracking in the subsequent interlayer structure.
[0039] In this embodiment, the first metal transition layer 150, the reflective layer 200, and the wavelength conversion layer 300 are sequentially formed by physical vapor deposition. The advantages of this implementation are as follows: During physical vapor deposition, chemical bonds are formed between adjacent layers, increasing the adhesion between them and forming a stable interface of the heat conduction film layer, achieving high thermal stability and high reliability. The interlayer adhesion is strong, the thickness is thin, and the thermal resistance is small, which can significantly improve the heat conduction ability of the wavelength conversion device 10. During the preparation process, there is no need to additionally use adhesives, reducing the thickness of the entire wavelength conversion device 10, avoiding the void problem caused by the use of adhesives, reducing the preparation process, and improving production efficiency.
[0040] Among them, the physical vapor deposition method can be vacuum evaporation, that is, heating in a vacuum to evaporate metals, alloys, or compounds, and then condensing them on the surface of the substrate. The physical vapor deposition method can also be magnetron sputtering, that is, using high-speed positive ions to bombard a certain target (cathode), so that the surface atoms of the target escape with a certain energy and are then deposited on the surface of the workpiece. The physical vapor deposition method can also be ion plating, that is, using the glow discharge of an inert gas to ionize the metal or alloy to be plated, and bombarding the surface of the substrate (workpiece) with these energetic ions and depositing on it to form a coating at the same time. In some embodiments of the present application, the physical vapor deposition method can be one of electron beam evaporation, atomic layer deposition, and magnetron sputtering. Among them, electron beam evaporation deposition can achieve a dense and uniform-thickness metal film, such as the first metal transition layer, the reflective layer, and the second metal transition layer; atomic layer deposition can perform surface control on the atomic layer scale, ensuring precise sub-monolayer film thickness control, higher chemical stoichiometry and density of the film, and achieving uniform and excellent high-quality oxide growth. For example, in some embodiments of the present application, atomic layer deposition can be used for the growth of the oxide transition layer; while magnetron sputtering can grow a large-area and uniform film layer quickly at a low cost in a short time. For example, in the embodiments of the present application, magnetron sputtering is used to form each film layer except the substrate. In particular, in one embodiment, magnetron sputtering is used to form the wavelength conversion layer. By selecting the preferred physical deposition techniques for each film layer, a wavelength conversion device with excellent film layer quality and continuous growth from top to bottom can be obtained.
[0041] Specifically, the film layer prepared by any of the vapor deposition methods has a lower thickness than the film layer prepared by the traditional method. For example, the thickness of the first metal transition layer 150 is 100 nm - 150 nm, the thickness of the reflective layer is 80 nm - 120 nm, and the thickness of the wavelength conversion layer is 1500 - 5000 nm. For the fixed wavelength conversion device prepared by this vapor deposition, no solder and silver glue are required to connect the substrate and the wavelength conversion layer. The continuous in-situ epitaxial growth starting from the substrate can achieve a film layer interface with strong chemical bonding and heat conduction properties, enabling high thermal stability and high reliability. Moreover, the physical and chemical vapor deposition method does not require the high-temperature and high-pressure equipment and conditions for the synthesis of the traditional wavelength conversion layer. The wavelength conversion device encapsulated by this method has strong chemical bonding adhesion between layers, a thin interlayer thickness, and a small thermal resistance, which can significantly improve the reliability of the heat conduction ability of the wavelength conversion device.
[0042] Specifically, the above-mentioned wavelength conversion device 10 can be prepared in the following manner:
[0043] Provide a substrate 100. For example, a copper substrate 100 is selected. The copper substrate 100 is ultrasonically cleaned successively with acetone, isopropyl alcohol, and deionized water, and then blown dry with a nitrogen gas stream. Immediately afterwards, the surface of the copper substrate 100 is subjected to plasma cleaning in an air or oxygen atmosphere for 10 minutes. After the cleaning is completed, a baffle is set on the surface of the substrate 100. The baffle surrounds a deposition area in the middle, and the baffle is mainly used to protect the non-deposition area of the substrate 100. The first metal transition layer 150 is formed in the deposition area of the substrate 100 by means of magnetron sputtering. The thickness of the first metal transition layer 150 is 100 nm - 150 nm. After the first metal transition layer 150 is formed, the reflective layer 200 is formed on the surface of the first metal transition layer 150 away from the substrate 100 by means of magnetron sputtering. The thickness of the reflective layer 200 is 80 nm - 120 nm. After the reflective layer 200 is formed, the wavelength conversion layer 300 is formed on the surface of the reflective layer 200 away from the first metal transition layer 150 by means of magnetron sputtering. The thickness of the wavelength conversion layer 300 can be 1500 - 5000 nm.
[0044] Continuously using the vapor deposition method for preparation can avoid the contamination of impurities in the air, thereby improving the purity of each film layer.
[0045] In some embodiments, please continue to refer to Figure 2, the wavelength conversion device 10 may further include an oxide transition layer 250 disposed between the wavelength conversion layer 300 and the reflective layer 200. By providing the oxide transition layer 250, a greater bonding force can be formed when the wavelength conversion layer 300 and the oxide transition layer 250 are chemically bonded. Similarly, a greater bonding force can also be formed when the reflective layer 200 and the oxide transition layer 250 are chemically bonded, thereby improving the bonding force between the wavelength conversion layer 300 and the reflective layer 200. At the same time, by providing the oxide transition layer 250, the internal stress formed between the reflective layer 200 and the wavelength conversion layer 300 due to different crystal structures can also be relaxed, thereby reducing defects such as cracking in the subsequent interlayer structure.
[0046] Among them, the oxide transition layer 250 may be selected from at least one of aluminum oxide and silicon oxide. In some other embodiments, the oxide transition layer 250 may also be selected from one or more of various oxides such as titanium oxide, zirconium oxide, hafnium oxide, niobium oxide, nickel oxide, and neodymium oxide.
[0047] In this embodiment, the wavelength conversion layer 300 is made of YAG:Ce, where YAG is a cubic crystal system composed of yttrium, aluminum, and oxygen, and the lattice parameter When selecting the second oxide transition layer 250, a material whose lattice parameter matches or is close to that of the material of the wavelength conversion layer 300 is preferably selected. The higher the lattice matching, the more helpful it is to reduce stress and defects and improve the stability and performance of the material.
[0048] Referring to Table 1, Table 1 shows the lattice parameters of common oxides:
[0049]
[0050] It can be seen from Table 1 that aluminum oxide is most commonly suitable as the transition layer material for the YAG film layer because its lattice parameter and thermal expansion coefficient are close to those of YAG. Yttrium oxide Y2O3 is also a good choice because it has a similar crystal system structure and close lattice constant to YAG. In addition, niobium oxide Nb2O5, hafnium oxide HfO2, etc. can also be considered as transition layer materials.
[0051] The thickness of the oxide transition layer 250 may be, for example, 5 nm - 20 nm. Of course, in some other embodiments, the thickness of the oxide transition layer 250 may also be other values, and this embodiment does not limit this.
[0052] At this time, the wavelength conversion device 10 can be prepared in the following manner:
[0053] Provide a substrate 100. For example, a copper substrate 100 is selected. The copper substrate 100 is ultrasonically cleaned successively with acetone, isopropyl alcohol, and deionized water, and then blown dry with a nitrogen gas stream. Immediately afterwards, the surface of the copper substrate 100 is subjected to plasma cleaning in an air or oxygen atmosphere for 10 minutes. After the cleaning is completed, the substrate 100 is fixed using a fixture 500, and a baffle is provided on the surface of the substrate 100. A deposition area is enclosed in the middle of the baffle. A first metal transition layer 150 is formed in the deposition area of the substrate 100 by means of magnetron sputtering. After the first metal transition layer 150 is formed, a reflective layer 200 is continuously formed on the surface of the first metal transition layer 150 away from the substrate 100 by means of magnetron sputtering. The thickness of the reflective layer 200 is 80 nm - 120 nm. After the reflective layer 200 is formed, an oxide transition layer 250 is continuously formed on the surface of the reflective layer 200 away from the first metal transition layer 150 by means of magnetron sputtering. The thickness of the oxide transition layer 250 can be 5 nm - 20 nm; a wavelength conversion layer 300 is continuously formed on the surface of the reflective layer 200 away from the first metal transition layer 150 by means of magnetron sputtering. The thickness of the wavelength conversion layer 300 can be 1500 - 5000 nm.
[0054] Example 2
[0055] Refer to Figure 3 , this embodiment provides a wavelength conversion device 10, the difference from the first embodiment is that in this embodiment, the wavelength conversion device 10 further includes a second metal transition layer 350. For the same parts, reference can be made to the content of the first embodiment, and details will not be described herein again.
[0056] In this embodiment, the second metal transition layer 350 is disposed between the oxide transition layer 250 and the reflective layer 200. Specifically, the second metal transition layer 350 is an aluminum layer. By providing metallic aluminum and the oxide transition layer, especially when alumina is used as the transition layer, the aluminum transition layer and the alumina transition layer have similar chemical structures, and the obtained wavelength conversion structure is more stable. By providing the second metal transition layer 350, the reflective layer 200 can be protected from deterioration and the internal stress formed between the oxide transition layers 250 due to different crystal structures can be reduced, thereby reducing defects such as cracking in the subsequent interlayer structure.
[0057] In some embodiments of the present application, the second metal transition layer 350 can be formed by a vapor deposition method, such as one of electron beam evaporation, atomic layer deposition, and magnetron sputtering methods. Therefore, the thickness of the obtained second metal transition layer 350 can be relatively thin, for example, 5 - 20 nm.
[0058] The above-mentioned wavelength conversion device 10 can be prepared in the following manner:
[0059] A substrate 100 is provided. For example, a copper substrate 100 is selected. The copper substrate 100 is ultrasonically cleaned successively with acetone, isopropyl alcohol, and deionized water, and dried by purging with a nitrogen gas stream. Immediately thereafter, the surface of the copper substrate 100 is subjected to plasma cleaning in an air or oxygen atmosphere for 10 minutes. After cleaning, a baffle is provided on the surface of the substrate 100, and a deposition region is formed in the middle of the baffle. A first metal transition layer 150 is formed in the deposition region of the substrate 100 by electron beam evaporation. After the first metal transition layer 150 is formed, a reflective layer 200 is continuously formed on the surface of the first metal transition layer 150 away from the substrate 100 by electron beam evaporation. The thickness of the reflective layer 200 is 80 nm - 120 nm. After the reflective layer 200 is formed, a second metal transition layer 350 is continuously formed on the surface of the reflective layer 200 away from the first metal transition layer 150 by electron beam evaporation. The thickness of the second metal transition layer 350 is 5 - 20 nm. After the second metal transition layer 350 is formed, an oxide transition layer 250 is continuously formed on the surface of the second metal transition layer 350 away from the reflective layer 200 by atomic layer deposition. The thickness of the oxide transition layer 250 can be 5 nm - 20 nm; a wavelength conversion layer 300 is continuously formed on the surface of the reflective layer 200 away from the first metal transition layer 150 by magnetron sputtering. The thickness of the wavelength conversion layer 300 can be 1500 - 5000 nm. Among them, electron beam evaporation deposition can achieve a dense and uniform-thickness metal thin film, such as the first metal transition layer 150, the reflective layer 200, and the second metal transition layer 350; atomic layer deposition can perform surface control on the atomic layer scale, ensuring precise sub-monolayer film thickness control, higher chemical stoichiometry and density of the thin film, and realizing the growth of a uniform and excellent high-quality oxide transition layer 250; while magnetron sputtering can rapidly grow a large-area and uniform wavelength conversion layer 300 in a short time at a low cost. By selecting the preferred physical deposition techniques for each film layer, a wavelength conversion device with excellent film layer quality and continuous growth from top to bottom can be obtained.
[0060] For the wavelength conversion device 10 provided in this embodiment, there is no need to provide a separate bonding layer. The first metal transition layer 150, the reflective layer 200, the substrate 100, and the wavelength conversion layer 300 are bonded by chemical bonds to form a stable thermal conduction film layer interface, achieving high thermal stability and high reliability, strong interlayer adhesion, thin thickness, and small thermal resistance, and can significantly improve the thermal conduction ability of the wavelength conversion device 10.
[0061] The manufacturing method of the wavelength conversion device 10 provided by the present application starts from the substrate 100. By using the vapor deposition method, the first metal transition layer 150, the reflective layer 200, and the wavelength conversion layer 300 are epitaxially grown. The first metal transition layer 150, the reflective layer 200, the substrate 100, and the wavelength conversion layer 300 are bonded by chemical bonds without using traditional adhesives, forming a stable thermal conduction film interface. The prepared wavelength conversion device 10 can achieve high thermal stability and high reliability, with strong interlayer adhesion, thin thickness, and small thermal resistance.
[0062] Example 3
[0063] Refer to Figure 4 , this embodiment provides a light-emitting device 1. The light-emitting device 1 includes an excitation light source 20 and a wavelength conversion device 10. The excitation light source 20 emits excitation light to excite the wavelength conversion device 10 to emit stimulated light. Among them, the excitation light source can be, for example, a laser, an LED, a fluorescent lamp, etc., for emitting excitation light. The wavelength conversion device 10 can be any one of the foregoing embodiments, and specifically, the relevant content of the foregoing embodiments can be referred to.
[0064] Among them, the excitation light source 20 can be, for example, a blue light source. In some other embodiments, the excitation light source 20 can also be a light source of other colors, and this embodiment does not limit this.
[0065] The foregoing are only the preferred embodiments of the present application and are not used to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A wavelength conversion device, characterized in that, Comprising: Substrate; The first metal transition layer, which is connected to the surface of the substrate; Reflection layer, which is connected to the surface of the first metal transition layer away from the substrate; And Wavelength conversion layer, which is disposed on the surface of the reflection layer away from the first metal transition layer.
2. The wavelength conversion device according to claim 1, wherein The wavelength conversion device further includes an oxide transition layer, which is disposed between the wavelength conversion layer and the reflection layer.
3. The wavelength conversion device according to claim 2, characterized in that, The oxide transition layer is selected from at least one of aluminum oxide, silicon oxide, titanium oxide, zirconium oxide, hafnium oxide, niobium oxide, nickel oxide, and neodymium oxide.
4. The wavelength conversion device according to claim 1, characterized in that The wavelength conversion device further includes a second metal transition layer, which is disposed between the oxide transition layer and the reflection layer.
5. The wavelength conversion device according to claim 4, characterized in that, The second metal transition layer is an aluminum layer.
6. The wavelength conversion device according to claim 1, characterized in that, The first metal transition layer is formed of at least one of nickel, nickel-chromium alloy, and titanium.
7. The wavelength conversion device according to any one of claims 1-6, characterized in that, The first metal transition layer, the reflection layer, and the wavelength conversion layer are respectively formed by vapor deposition.
8. The wavelength conversion device according to claim 7, wherein, The thickness of the first metal transition layer 150 is 100 nm - 150 nm.
9. The wavelength conversion device according to claim 7, characterized in that, The thickness of the reflection layer is 80 nm - 120 nm.
10. The wavelength conversion device according to claim 7, wherein, The thickness of the wavelength conversion layer is 1500 - 5000 nm.
11. The wavelength conversion device according to claim 4 or 5, characterized in that, The second metal transition layer is formed by vapor deposition.
12. The wavelength conversion device according to claim 11, characterized in that, The thickness of the second metal transition layer 350 is 5 - 20 nm.
13. A method for preparing a wavelength conversion device, characterized in that, Comprising: Providing a substrate, and sequentially depositing a first metal transition layer on one surface of the substrate by vapor deposition; forming a reflection layer on the surface of the first metal transition layer away from the substrate, and forming a wavelength conversion layer on the surface of the reflection layer away from the first metal transition layer.
14. The method for preparing the wavelength conversion device according to claim 13, wherein, Before forming the reflection layer, forming an oxide transition layer on the surface of the first metal transition layer away from the substrate by vapor deposition, and then forming the reflection layer on the surface of the oxide transition layer away from the first metal transition layer.
15. The method for preparing the wavelength conversion device according to claim 14, characterized in that, Before forming the reflection layer, forming a second metal transition layer on the surface of the oxide transition layer away from the first metal transition layer by vapor deposition, and then forming the reflection layer on the surface of the second metal transition layer away from the oxide transition layer.
16. A light-emitting device, characterized in that, The light-emitting device includes an excitation light source and the wavelength conversion device according to any one of claims 1 - 12, and the excitation light source emits excitation light to excite the wavelength conversion device to emit stimulated light.