Method and system for testing minority carrier lifetime of medium-short wave infrared detector material

Abstract

The invention discloses a method and a system for testing minority carrier lifetime of a medium-short wave infrared detector material. The method comprises the following steps: exciting a sample minority carrier to generate radiation recombination by using pulse laser to generate photoluminescence light; the photoluminescence light is up-converted into short-wave light by using a nonlinear crystal; filtering impurity light of a non-target wave band in the short-wave light through a filtering module; capturing the filtered short-wave optical signal by using a detector, and converting the captured luminous intensity signal which changes along with time into an electric signal; and recording and fitting a signal intensity change curve by using signal processing equipment to obtain the minority carrier lifetime of the sample. The system comprises a photoluminescence module, an up-conversion module, a filtering module, a detector and a signal processing device. The method provided by the invention can effectively determine the minority carrier lifetime of the medium-short wave infrared detector material with nanosecond and picosecond magnitudes of photoluminescence wavelength in a range of 1.7-5.0 [mu] m.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor material detection, and particularly to a method and system for testing the minority carrier lifetime of mid-wave and short-wave infrared detector materials during testing. Background Art

[0002] Due to the wide applications of mid-wave and short-wave infrared in atmospheric windows, gas characteristic absorption, night vision, military, medical, etc., remarkable R & D achievements have been made in recent years. With the continuous increase in the demand for infrared detectors in this band, the performance requirements for detector materials are also constantly improving. For example, indium gallium arsenide (InGaAs) materials can obtain the required epitaxial material properties by changing the composition ratio of InAs and GaAs. As the indium component content increases, the cut-off wavelength continuously increases within the cut-off wavelength range of gallium arsenide (0.87 μm) and indium arsenide (3.5 μm). In the past, InGaAs materials have developed rapidly due to advantages such as high quantum efficiency, high absorption coefficient, high sensitivity, good uniformity and stability. However, as the cut-off wavelength increases, problems such as reduced minority carrier lifetime, increased defects, and increased dark current occur.

[0003] As an important parameter of semiconductor materials, the minority carrier lifetime directly affects multiple core performance indicators of semiconductor detection devices, such as quantum efficiency and response speed. Introducing more accurate and efficient minority carrier lifetime testing technologies is of great significance in material performance evaluation.

[0004] For measuring the nanosecond-level minority carrier lifetime of mid-wave and short-wave infrared detector materials with wavelengths greater than 1.7 μm, the commonly used method at present is the microwave reflection photoconductivity method. This method has a large detection range of minority carrier lifetime, and the detection method is not limited by the properties of the sample material, so it is widely used. However, for complex structure devices, the data measured by this method cannot accurately obtain the minority carrier lifetime of a specific absorption layer region, which brings certain errors to the minority carrier lifetime test. Or it can be estimated by measuring the current-voltage curve of the finished device. This method can directly obtain the minority carrier lifetime of the finished device, the test method is simple, and the error is small. However, there are problems such as a long test cycle and being often affected by processing processes such as the wafer process, and experimental data cannot be obtained immediately. Time-resolved photoluminescence (TRPL) is a mature, fast, and non-destructive method for testing the minority carrier lifetime of materials, which can achieve extremely high time resolution and easily realize the testing of minority carrier lifetimes in the nanosecond and picosecond ranges. It is widely used in the testing of semiconductor devices. However, for the picosecond-level minority carrier lifetime test in the 1.7 μm to 5.0 μm band, the available detector is a superconducting nanowire detector, but it has problems such as high cost and harsh environmental requirements. Summary of the Invention

[0005] The present invention provides a method and system for testing the minority carrier lifetime of materials for medium and short wavelength infrared detectors, which solves the technical problems existing in the above-mentioned prior art. The present invention can test the minority carrier lifetime of samples in different wavelength ranges by replacing non-linear crystals, etc. The range of test samples is wide, and the test method is simple and the cost is relatively controllable. In addition, the present invention can effectively measure the minority carrier lifetime of materials for medium and short wavelength infrared detectors in the nanosecond and picosecond levels with a photoluminescence wavelength in the range of 1.7 to 5.0 μm.

[0006] The present invention provides the following technical solutions:

[0007] A method for testing the minority carrier lifetime of materials for medium and short wavelength infrared detectors, characterized by comprising the following steps:

[0008] S1. Use a pulsed laser to excite the minority carriers of the sample to undergo radiative recombination to generate photoluminescence light;

[0009] S2. Use a non-linear crystal to up-convert the photoluminescence light into short-wavelength light;

[0010] S3. Filter out the impurity light in the non-target wavelength band of the short-wavelength light through a filtering module;

[0011] S4. Use a detector to capture the filtered short-wavelength light signal and convert the captured luminescence intensity signal varying with time into an electrical signal;

[0012] S5. Use a signal processing device to record and fit the signal intensity change curve to obtain the minority carrier lifetime of the sample.

[0013] Further, the specific method of step S2 is as follows:

[0014] Polarize the pump light emitted by the pump light source and the photoluminescence light, couple the optical paths, and then irradiate the surface of the non-linear crystal, and generate short-wavelength light through sum-frequency generation of the non-linear crystal; or

[0015] The pulsed light separated by the beam splitter is coupled with the photoluminescence light after passing through the time delay module, polarized, and then irradiated on the surface of the non-linear crystal, and short-wavelength light is generated through sum-frequency generation of the non-linear crystal.

[0016] Further, in step S2, the non-linear crystal is a periodically poled lithium niobate crystal or a barium metaborate crystal.

[0017] Further, in step S1, the wavelength range of the photoluminescence light is 1.7 to 5.0 μm.

[0018] Further, in step S2, the wavelength range of the short-wavelength light is 0.6 to 1.4 μm.

[0019] Further, in step S1, a temperature control module 1 is used to control the temperature of the sample during the test.

[0020] Further, at different sample temperatures, steps S1 to S5 are repeated to detect the variation trend of the minority carrier lifetime of the sample with temperature, and the minority carrier lifetime of the sample under different test temperature environments is obtained.

[0021] Further, in step S1, the sample stage is used to control the region where the sample undergoes photoluminescence, and a two-dimensional distribution of the minority carrier lifetime of the sample is obtained.

[0022] A system for testing the minority carrier lifetime of a mid-short wave infrared detector material, which is used to implement the method for testing the minority carrier lifetime of the mid-short wave infrared detector material, includes:

[0023] A photoluminescence module, including a pulsed laser, a sample stage, a temperature control module 1, a vacuum module, and optical elements, for controlling the environmental conditions of the sample photoluminescence and exciting the sample to emit photoluminescence; and

[0024] An upconversion module, including a nonlinear crystal, a pump light module, a temperature control module 2, and optical elements, for performing light polarization and optical path coupling processing, and converting the photoluminescence light into short-wavelength light; and

[0025] A filtering module, including a filter or a beam splitter, for filtering out the impurity light in the non-target wavelength band of the short-wavelength light; and

[0026] A detector, for capturing the filtered optical signal and converting the optical signal into an electrical signal; and

[0027] A signal processing device, including a time-correlated single photon counting system and data processing software, for generating a curve of the luminous intensity changing with time and fitting the minority carrier lifetime; and

[0028] The photoluminescence module, the upconversion module, the time delay module, the filtering module, and the detector are connected by an optical path; the detector and the signal processing device are connected by an electrical circuit.

[0029] Further, the pulse width of the pulsed laser is 100 - 1000 ps, the spot diameter is 0.2 - 1 mm, and the laser wavelength is 405 - 1550 nm.

[0030] Further, the detection wavelength band of the detector is 0.6 - 1.4 μm, and the time resolution is 0.5 - 2 ns.

[0031] Further, the temperature control module 1 is used to control the sample temperature, and the temperature control module 2 is used to control the temperature of the nonlinear crystal; the temperature control range of the temperature control module 1 is 7 - 350 K, and the temperature control accuracy is 0.05 - 0.2 K; the temperature control range of the temperature control module 2 is 293 - 473 K, and the temperature control accuracy is 0.1 - 0.5 K.

[0032] Furthermore, the sample stage mainly consists of a displacement stage and a controller, and is used to place and move the sample; the displacement control range of the sample stage is 50 - 200 mm, and the accuracy is 0.05 - 0.5 mm.

[0033] The present invention has the following advantages:

[0034] (1) The present invention has high time resolution, and picosecond-level time resolution can be obtained by selecting a short-pulse-width pulsed laser and a high-time-resolution detector.

[0035] (2) The present invention does not require a mid-wave infrared high-time-resolution infrared detector, such as a superconducting nanowire detector, etc., reducing the equipment cost and improving the time resolution of the minority carrier lifetime test in this band.

[0036] (3) The present invention can perform zonal detection on the heterostructure, change the minority carrier lifetime test band by adjusting the filtering module, and separately test the minority carrier lifetime of different recombination processes.

[0037] (4) The present invention has a wide range of test samples, and the minority carrier lifetime of samples in different wavelength ranges can be tested by replacing nonlinear crystals, etc., and the test range covers 1.7 - 5.0 μm. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 is a flowchart of the method for testing the minority carrier lifetime of mid-wave and short-wave infrared detector materials in the present invention;

[0039] Figure 2 is a schematic structural diagram of the system for testing the minority carrier lifetime of mid-wave and short-wave infrared detector materials in the present invention;

[0040] Figure 3 is a schematic structural diagram of the system corresponding to Example 1;

[0041] Figure 4 is a schematic structural diagram of the system corresponding to Example 2. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0042] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0043] The present invention provides a method for testing the minority carrier lifetime of mid-wave and short-wave infrared detector materials, including the following steps:

[0044] S1. Use a pulsed laser to excite the minority carriers of the sample to undergo radiative recombination, generating photoluminescence light;

[0045] S2. Use a nonlinear crystal to up-convert the photoluminescence light into short-wavelength light;

[0046] The specific method of step S2 is as follows: The pump light emitted by the pump light source and the photoluminescence light are polarized and coupled in the optical path, and then irradiated on the surface of the nonlinear crystal. Short-wavelength light is generated through sum frequency generation in the nonlinear crystal. Thus, the photoluminescence light is up-converted into short-wavelength light by using the nonlinear crystal.

[0047] Alternatively, the specific method of step S2 is as follows: Select the pulsed light separated by the beam splitter, after passing through the time delay module, it is coupled with the photoluminescence light, polarized, and then irradiated on the surface of the nonlinear crystal. Short-wavelength light is generated through sum frequency generation in the nonlinear crystal. Thus, the photoluminescence light is up-converted into short-wavelength light by using the nonlinear crystal.

[0048] S3. Filter the impurity light in the non-target wavelength band of the short-wavelength light through the filtering module;

[0049] S4. Use a detector to capture the filtered short-wavelength light signal, and convert the captured luminescence intensity signal that changes with time into an electrical signal;

[0050] S5. Use a signal processing device to record and fit the signal intensity change curve to obtain the minority carrier lifetime of the sample.

[0051] Further, in step S2, the nonlinear crystal is a periodically poled lithium niobate crystal or a barium metaborate crystal.

[0052] Further, in step S1, the wavelength range of the photoluminescence light is 1.7 - 5.0 μm.

[0053] Further, in step S2, the wavelength range of the short-wavelength light is 0.6 - 1.4 μm.

[0054] Further, in step S1, a temperature control module 1 can also be used to control the temperature of the sample during the test process; and, it is possible to repeat steps S1 to S5 at different sample temperatures to detect the change trend of the minority carrier lifetime of the sample with temperature, and obtain the minority carrier lifetime of the sample under different test temperature environments.

[0055] Further, in step S1, a sample stage can also be used to control the region where the sample generates photoluminescence to obtain the two-dimensional distribution of the minority carrier lifetime of the sample.

[0056] In step S2, during the process of up-converting the photoluminescence light into short-wavelength light by using the nonlinear crystal, a temperature control module 2 is used to control the temperature of the nonlinear crystal.

[0057] During the test process, we can also use different band filtering modules to filter the impurity light in the non-target wavelength band, and use a detector to detect the filtered signal light to achieve the partition test of the minority carrier lifetime of complex heterostructure semiconductors, and conduct separate tests and analyses on the energy level structure and carrier behavior at the sample defects and dislocations.

[0058] Meanwhile, the present invention also provides a system for testing the minority carrier lifetime of a mid-wave and short-wave infrared detector material, which is used to implement the method for testing the minority carrier lifetime of a mid-wave and short-wave infrared detector material described above.

[0059] The system for testing the minority carrier lifetime of a mid-wave and short-wave infrared detector material includes a photoluminescence module, an upconversion module, a filtering module, a detector, and a signal processing device; among them, the photoluminescence module, the upconversion module, the filtering module, and the detector are interconnected through an optical path, and the detector and the signal processing device are interconnected through a circuit. The connection structure diagram of this system is as Figure 2 shown. The optical path used to connect each module component can be selected to be built by several lenses, mirrors, or optical fibers.

[0060] The photoluminescence module includes a pulsed laser, a sample stage, a vacuum module, a temperature control module 1, and optical elements, and is used to excite the sample to generate photoluminescence and control the photoluminescence conditions of the sample.

[0061] The pulsed laser has a pulse width of 100 - 1000 ps, a laser power of 1 - 9 W, a spot diameter of 0.2 - 1 mm, and a laser wavelength of 405 - 1550 nm, and can be used to provide pulsed light for periodically exciting the minority carriers of the sample to generate photoluminescence.

[0062] The sample stage is mainly composed of a displacement stage and a controller, and provides a two-dimensional planar displacement ability within a range of 200 mm with an accuracy of 0.05 - 0.5 mm, and is used to place and move the sample to control the light-emitting position of the sample during the test process.

[0063] The vacuum module mainly includes a vacuum pump, which is used to provide a vacuum environment of 10 -3 ~10 -4 Pa. The sample is in a vacuum environment during the test process.

[0064] The temperature control module 1 mainly includes a heating stage and a cryostat, and is used to control the temperature of the sample during the test process, providing a temperature environment of 7 - 350 K, and the temperature control accuracy is 0.05 - 0.2 K.

[0065] The optical elements in the photoluminescence module mainly include total reflection mirrors and optical lenses, and are used to focus the laser beam and couple the photoluminescence light into a preset optical path.

[0066] The upconversion module includes a nonlinear crystal, a pump light module, a temperature control module 2, and optical elements, and is used to perform optical polarization and optical path coupling processing, and convert the photoluminescence light into short-wavelength light.

[0067] The nonlinear crystal can select different specifications and materials of nonlinear crystals according to the requirements of the wavelength conversion range, and is used to sum-frequency upconvert the photoluminescence light into short-wavelength light.

[0068] The pump light module mainly includes a pump light source or a beam splitter. If the pump light emitted by the pump light source undergoes sum-frequency up-conversion with the photoluminescence light in a nonlinear crystal, an additional pump light optical path needs to be provided to polarize and optically couple the pump light emitted by the pump light source and the photoluminescence light, and then irradiate the surface of the nonlinear crystal. If a beam splitter is used to separate a pulsed pump light from the photoluminescence module, an additional time delay module needs to be provided to polarize and optically couple the photoluminescence light and the pulsed pump light processed by the time delay module, and then irradiate the surface of the nonlinear crystal. The pump light source is used to provide pump light, mainly including a continuous laser, and the laser output laser parameters need to meet the requirements of the pump light required for sum-frequency up-conversion of the selected nonlinear crystal. The time delay module is used to delay the pulsed pump light. The time delay range of the time delay module is 100 - 2000 ns, the step is 1 - 10 ns, and it can realize the characterization of the minority carrier lifetime of 1 - 2000 ns, and the time resolution accuracy is 2 - 10 ns.

[0069] The second temperature control module mainly includes a heating stage, which is used to control the temperature of the nonlinear crystal, control the wavelength of the sum-frequency up-conversion of photoluminescence, the temperature control range is 293 - 473 K, and the temperature control accuracy is 0.1 - 0.5 K.

[0070] The optical elements in the up-conversion module mainly include a lens group, a beam combiner, and a polarizer, which are used to construct the coupling optical path of the photoluminescence light and the pump light, polarize them and then vertically incident on the nonlinear crystal, and construct the output optical path of the short-wavelength light generated by sum-frequency.

[0071] The filtering module, including a filter or a beam splitter, is used to filter out the impurity light in the non-target material photoluminescence band of the short-wavelength light, and realize the characterization of the minority carrier lifetime of the complex heterostructure in different regions.

[0072] The detector is used to capture the filtered optical signal and convert the optical signal into an electrical signal. The detection band of the detector is 0.6 - 1.4 μm, and the time resolution is 0.5 - 2 ns.

[0073] The signal processing device, such as a time-correlated single-photon counting system and data processing software, is used to generate the curve of the luminous intensity changing with time and fit the minority carrier lifetime.

[0074] Through the above system for testing the minority carrier lifetime of short-wave infrared detector materials, it can realize obtaining the minority carrier lifetime by fitting the curve of the photoluminescence light change based on the time-resolved photoluminescence technology and the nonlinear crystal up-conversion technology; and it can be applied to the accurate measurement of the minority carrier lifetime in the nanosecond range of 1.7 - 5.0 μm short-wave infrared detector materials; and it can realize the measurement of the local minority carrier lifetime of the partitioned heterostructure, and it can realize the measurement of the minority carrier lifetime at different temperatures.

[0075] To facilitate the understanding of those of ordinary skill in the art of the present invention, specific embodiments under two optical paths for minority carrier lifetime testing using the methods and systems of the present invention are given below.

[0076] Taking the characterization of the minority carrier lifetime of InGaAs material as an example, a periodically poled lithium niobate crystal is selected for the up-conversion of the photoluminescence of the sample. The periodically poled lithium niobate crystal can sum-frequency generate short-wavelength light with a wavelength of 0.8 - 1.0 μm from the 1550 nm pump light and the photoluminescence light with a wavelength of 1.7 - 2.6 μm. During the experiment, the period of the periodically poled lithium niobate crystal needs to be appropriately selected according to the target wavelength band. This method can effectively characterize the minority carrier lifetime of the InGaAs material in the extended wavelength band.

[0077] Embodiment 1

[0078] As Figure 3 shown, the first minority carrier lifetime testing system is built, which mainly includes: a 1550 nm pulsed laser, a time delay module, a periodically poled lithium niobate crystal, a filter, a detector, and a signal processing device.

[0079] In this system, the time delay module is an optical fiber delay line, with a delay range of 100 - 2000 ns and a step of 1 ns. The testing range of the minority carrier lifetime depends on the delay range of the time delay module. The time resolution of the system depends on the time delay step of the time delay module.

[0080] In this system, the parameters of the pulsed laser are: wavelength 1550 nm, pulse width 500 ps, laser power 6 W, spot diameter 0.4 mm, repetition rate 500 KHz. After the pulsed laser emits from the laser, it is divided into two beams by a beam splitter. One beam is focused by an optical fiber collimator and an aspheric lens and then irradiated on the InGaAs sample to excite the photoluminescence of the sample. The other beam is delayed by the time delay module and then coupled with the photoluminescence light. After polarization, it is incident normally on a periodically poled lithium niobate crystal with a period of 27 - 30 μm to sum-frequency generate sum-frequency light. After filtering by a filter with a wavelength range of 940 - 970 nm, it is detected by a detector, and the data is recorded and processed by a signal processing device. The signal processing device selects a time-correlated single photon counting system.

[0081] Test procedure: The pulsed laser emitted by the pulsed laser is divided into two beams. One beam is focused by an optical lens group and then irradiated on the surface of the sample to excite the photoluminescence of the sample. The other pulsed laser beam is used as the pump light. The photoluminescence light and the pump light after time delay are polarized and coupled in the optical path and then irradiated on the surface of the nonlinear crystal. The periodically poled lithium niobate crystal sum-frequency up-converts these two beams of light into short-wavelength light. The detector converts the pulsed light signal into an electrical signal for recording. The time-correlated single-photon counting system records the time when the photons reach the detector. After a preset time, the time delay module delays for a fixed time. The detector detects the optical signal within this period again, and this process is repeated continuously until the total time delay is equal to 2 μs (i.e., the pulse period). The optical signal within each time delay period is recorded and a signal change curve is generated. The decay part curve of the signal change curve is fitted to obtain the minority carrier lifetime of the sample.

[0082] This detection system can be used to accurately detect the minority carrier lifetime of InGaAs materials with extended wavelengths in the 2.4 - 2.6 μm band, and the detected minority carrier lifetime range is 0.1 - 1 μs.

[0083] Example 2

[0084] As Figure 4 shown, a second minority carrier lifetime test system is built, which mainly includes: a pulsed laser, a 1550 nm continuous laser, a periodically poled lithium niobate crystal, a filtering module, a detector, and a signal processing device. Different from Example 1, in this Example 2, a pump light source is additionally provided, and a beam splitter and a time delay module are not used.

[0085] In this system, the parameters of the pulsed laser are: wavelength 534 nm, pulse width 200 ps, laser power 8 W, spot diameter 0.4 mm. The pulsed laser emitted from the laser is irradiated on the InGaAs sample to excite the photoluminescence of the sample. After polarization, it is coupled with another linearly polarized continuous pump light of 1550 nm and is incident normally on a 27 - 30 μm periodically poled lithium niobate crystal to generate sum-frequency light. After filtering by a 940 - 970 nm filter, it is detected by a detector, and data recording and processing are performed by a signal processing device.

[0086] Test procedure: The pulsed laser emitted by the pulsed laser is focused by an optical lens group and then irradiated on the surface of the sample to excite the photoluminescence of the sample. The photoluminescence light and the pump light emitted by the continuous laser are polarized and coupled in the optical path and then irradiated on the surface of the nonlinear crystal. The periodically poled lithium niobate crystal sum-frequency up-converts these two beams of light into short-wavelength light. The detector converts the pulsed light signal into an electrical signal for recording. The time-correlated single-photon counting system records the time when the photons reach the detector. The data processing software generates a signal change curve. The decay part curve of the signal change curve is fitted to obtain the minority carrier lifetime of the sample.

[0087] In an embodiment, a non-linear crystal is used to perform sum frequency mixing on the photoluminescence light and other light beams, thereby forming sum frequency light with a shorter wavelength (i.e., short-wavelength light), and realizing the up-conversion of the photoluminescence light with a longer wavelength into short-wavelength light for minority carrier lifetime testing.

Claims

1. A method for testing the minority carrier lifetime of medium and short wave infrared detector materials, characterized in that: The following steps are involved: S1. Use pulsed laser to excite minority carriers in the sample to generate radiative recombination and generate photoluminescence light; S2, using nonlinear crystals to up-convert photoluminescent light into short-wavelength light; S3, filtering impurity light in non-target bands in the short-wave light through a filter module; S4, using a detector to capture the filtered short-wave light signal, and converting the captured luminous intensity signal that varies with time into an electrical signal; S5. Use signal processing equipment to record and fit the signal intensity change curve to obtain the minority carrier lifetime of the sample.

2. A method for testing minority carrier lifetime of medium and short wave infrared detector materials according to claim 1, characterized in that: The specific method of step S2 is as follows: The pump light emitted by the pump light source is polarized with the photoluminescent light, and then optically coupled to the surface of the nonlinear crystal, and short-wave light is generated by the nonlinear crystal and frequency combination; or The pulse light separated by the beam splitter is coupled with the photoluminescent light after passing through the time delay module, and irradiated on the surface of the nonlinear crystal after polarization, and short-wave light is generated through the nonlinear crystal and frequency.

3. The method for testing the minority carrier lifetime of medium- and short-wave infrared detector materials according to claim 2, characterized in that: In step S2, the nonlinear crystal is a periodically poled lithium niobate crystal or a barium metaborate crystal.

4. The method for testing the minority carrier lifetime of a medium- and short-wave infrared detector material according to any one of claims 1 to 3, characterized in that: In step S1, the wavelength of the photoluminescent light is in the range of 1.7 to 5.0 μm.

5. The method for testing the minority carrier lifetime of medium- and short-wave infrared detector materials according to claim 4, characterized in that: In step S2, the wavelength range of the short-wave light is 0.6-1.4 μm.

6. A method for testing minority carrier lifetime of mid- and short-wave infrared detector materials according to any one of claims 1 to 3, characterized in that: In step S1, the temperature of the sample during the test is controlled by a temperature control module 1.

7. The method for testing the minority carrier lifetime of medium- and short-wave infrared detector materials according to claim 6, characterized in that: At different sample temperatures, steps S1 to S5 are repeated to detect the variation trend of the sample minority carrier lifetime with temperature, and obtain the sample minority carrier lifetime under different test temperature environments.

8. A method for testing minority carrier lifetime of mid- and short-wave infrared detector materials according to any one of claims 1 to 3, characterized in that: In step S1, the sample stage is used to control the photoluminescence region of the sample to obtain a two-dimensional distribution of the minority carrier lifetime of the sample.

9. A system for testing minority carrier lifetime of medium and short wave infrared detector materials, characterized in that: The method for testing the minority carrier lifetime of short-wave infrared detector materials according to claim 1 comprises: A photoluminescence module, including a pulse laser, a sample stage, a temperature control module 1, a vacuum module and optical elements, for controlling the photoluminescence conditions of the sample and stimulating the photoluminescence of the sample; and An up-conversion module, including a nonlinear crystal, a pump light module, a temperature control module 2 and optical elements, for performing light polarization and light path coupling processing, and converting photoluminescence light into short-wave light; and A filter module, including a filter or a spectroscope, for filtering impurity light in non-target bands in short-wave light; and a detector for capturing the filtered light signal and converting the light signal into an electrical signal; and Signal processing equipment, including a time-correlated single photon counting system and data processing software, used to generate a curve of luminescence intensity versus time and fit the minority carrier lifetime; and The photoluminescent module, the up-conversion module, the filtering module and the detector are connected through an optical path, and the detector and the signal processing device are connected through a circuit.

10. The system for testing minority carrier lifetime of mid- and short-wave infrared detector materials according to claim 9, characterized in that: The pulse laser has a pulse width of 100 to 1000 ps, ​​a spot diameter of 0.2 to 1 mm, and a laser wavelength of 405 to 1550 nm.

11. The system for testing minority carrier lifetime of mid- and short-wave infrared detector materials according to claim 9, characterized in that: The detection band of the detector is 0.6-1.4 μm, and the time resolution is 0.5-2 ns.

12. A system for testing minority carrier lifetime of mid- and short-wave infrared detector materials according to any one of claims 9 to 11, characterized in that: Temperature control module 1 is used to control the sample temperature, and temperature control module 2 is used to control the nonlinear crystal temperature; the temperature control range of temperature control module 1 is 7-350K, and the temperature control accuracy is 0.05-0.2K; the temperature control range of temperature control module 2 is 293-473K, and the temperature control accuracy is 0.1-0.5K.

13. A system for testing minority carrier lifetime of mid- and short-wave infrared detector materials according to any one of claims 9 to 11, characterized in that: The sample stage is mainly composed of a displacement stage and a controller, and is used to place and move the sample; the displacement control range of the sample stage is 50 to 200 mm, and the accuracy is 0.05 to 0.5 mm.

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