Light-emitting device, electronic apparatus, and method for manufacturing light-emitting device

Abstract

The invention provides a light-emitting device, an electronic apparatus and a method of manufacturing the light-emitting device, which can shorten the manufacturing process. The light emitting device includes: a substrate; a first land provided on the substrate; a first electrode provided on the first land; a first laminate provided on the first electrode; an insulating layer provided on a side surface of the first laminate; a first metal layer provided on the insulating layer; a second land provided on the substrate and separated from the first land; a conductive layer provided on the second land; a second laminate provided on the conductive layer; a second metal layer provided on a side surface of the second laminate; and a second electrode provided on the opposite side of the first laminate and the second laminate from the substrate and electrically connected to the second land via a second metal layer, the first laminate having a first semiconductor layer of the first conductivity type, a second semiconductor layer of the second conductivity type, and a first quantum well layer, and the second laminate having a second quantum well layer. The second laminate has a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, and a second quantum well layer.

Description

Technical Field

[0001] The present invention relates to a light-emitting device, an electronic device, and a method for manufacturing a light-emitting device. Background Art

[0002] Light-emitting elements such as LEDs (Light Emitting Diodes) are suitable as light sources for display devices and the like.

[0003] For example, Patent Document 1 describes a semiconductor unit including a light-emitting element having: a semiconductor layer formed by laminating a first conductive type layer, an active layer, and a second conductive type layer in this order from below; a first electrode provided on the lower surface of the first conductive type layer; and a second electrode provided on the upper surface of the second conductive type layer. The first electrode is connected to a terminal electrode provided on a substrate via a plating layer. The second electrode is connected to a terminal electrode provided on a substrate via a bump and a connection portion.

[0004] Patent Document 1: Japanese Patent Application Laid-Open No. 2015-195244

[0005] In the semiconductor unit described in Patent Document 1, in order to electrically connect the second electrode to the terminal electrode, bumps and connection portions are used, so the manufacturing process becomes complicated. Summary of the Invention

[0006] One aspect of the light-emitting device of the present invention includes: a substrate; a first connection pad provided on the substrate; a first electrode provided on the first connection pad; a first laminate provided on the first electrode; an insulating layer provided on a side surface of the first laminate; a first metal layer provided on the insulating layer; a second connection pad provided on the substrate and separated from the first connection pad; a conductive layer provided on the second connection pad; a second laminate provided on the conductive layer; a second metal layer provided on a side surface of the second laminate; and a second electrode provided on a side opposite to the substrate of the first laminate and the second laminate, and electrically connected to the second connection pad via the second metal layer. The first laminate has: a first semiconductor layer of a first conductive type; a second semiconductor layer of a second conductive type different from the first conductive type, provided between the first semiconductor layer and the second electrode; and a first quantum well layer provided between the first semiconductor layer and the second semiconductor layer. The second laminate has: a third semiconductor layer of the first conductive type; a fourth semiconductor layer of the second conductive type, provided between the third semiconductor layer and the second electrode; and a second quantum well layer provided between the third semiconductor layer and the fourth semiconductor layer.

[0007] One aspect of the electronic device of the present invention has one aspect of the light-emitting device.

[0008] One aspect of the method for manufacturing a light-emitting device of the present invention includes the following steps: forming a first stack and a second stack separated from each other on a first substrate; forming a first electrode on the first stack and a conductive layer on the second stack; forming an insulating layer on a side surface of the first stack; forming a first metal layer on the insulating layer and a second metal layer on a side surface of the second stack; bonding a structure having the first substrate, the first stack, the second stack, the first electrode, the conductive layer, the insulating layer, the first metal layer, and the second metal layer to a second substrate provided with a first connection pad and a second connection pad separated from each other such that the first electrode faces the first connection pad and the conductive layer faces the second connection pad; removing the first substrate to expose the first stack and the second stack; and forming a second electrode on the first stack and the second stack. The first stack has: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type, which is provided between the first semiconductor layer and the second electrode; and a first quantum well layer, which is provided between the first semiconductor layer and the second semiconductor layer. The second stack has: a third semiconductor layer of the first conductivity type; a fourth semiconductor layer of the second conductivity type, which is provided between the third semiconductor layer and the second electrode; and a second quantum well layer, which is provided between the third semiconductor layer and the fourth semiconductor layer. Description of the Drawings

[0009] Figure 1 It is a cross-sectional view schematically showing the light-emitting device of the present embodiment.

[0010] Figure 2 It is a top view schematically showing the light-emitting device of the present embodiment.

[0011] Figure 3 It is a cross-sectional view schematically showing the light-emitting device of the present embodiment.

[0012] Figure 4 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0013] Figure 5 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0014] Figure 6 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0015] Figure 7 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0016] Figure 8 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0017] Figure 9 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0018] Figure 10 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0019] Figure 11 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0020] Figure 12 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0021] Figure 13 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0022] Figure 14 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device of the present embodiment.

[0023] Figure 15 It is a top view schematically showing the light-emitting device of the modified example of the present embodiment.

[0024] Figure 16 It is a view schematically showing the projector of the present embodiment.

[0025] Figure 17 It is a top view schematically showing the display of the present embodiment.

[0026] Figure 18 It is a cross-sectional view schematically showing the display of the present embodiment.

[0027] Figure 19 It is a perspective view schematically showing the head-mounted display of the present embodiment.

[0028] Figure 20 It is a view schematically showing the image forming device and the light guide device of the head-mounted display of the present embodiment.

[0029] Reference Numeral Explanation

[0030] 2: First tapered portion; 3: Second tapered portion; 4: First side surface; 5: Second side surface; 10: Driving substrate; 12: First connection pad; 14: Second connection pad; 16: First layer; 18: Second layer; 20: First laminate; 21: Second laminate; 22: First semiconductor layer; 23: Third semiconductor layer; 24: First quantum well layer; 25: Second quantum well layer; 26: Second semiconductor layer; 27: Fourth semiconductor layer; 28: Contact surface; 29: Protrusion; 30: First electrode; 31: Conductive layer; 32: Second electrode; 40: Insulating layer; 42: First contact hole; 50: First metal layer; 51: Second metal layer; 60: Protective layer; 62: Second contact hole; 64: Third contact hole; 70: Third metal layer; 72: Sealing layer; 74: Reflective surface; 80: Light-transmitting member; 82: Emitting surface; 90: Growth substrate; 92: Support substrate; 94: Buffer layer; 100: Light-emitting device; 102: Light-emitting element; 104: Connection portion; 106: Structure; 110, 112, 114: Semiconductor layer; 116: Conductive layer; 118: Metal layer; 120: Resist layer; 200: Light-emitting device; 200R: Red light source; 200G: Green light source; 200B: Blue light source; 700: Projector; 702R: First optical element; 702G: Second optical element; 702B: Third optical element; 704R: First light modulation device; 704G: Second light modulation device; 704B: Third light modulation device; 706: Cross dichroic prism; 708: Projection device; 710: Screen; 800: Display; 810: Driving circuit; 812: Display area; 814: Data line driving circuit; 816: Scan line driving circuit; 818: Control circuit; 820: Lens array; 830: Radiator; 900: Head-mounted display; 910a: First display portion; 910b: Second display portion; 911: Image forming device; 912: External component; 913: Light modulation device; 914: Projection device; 915: Light guide device; 916: Image light guide member; 917: Reflective layer; 918: Transparent member; 920: Frame; 930a: First temple; 930b: Second temple. Detailed implementation manners

[0031] Hereinafter, preferred implementation manners of the present invention will be described in detail with reference to the drawings. In addition, the implementation manners described below do not unduly limit the content of the present invention recited in the claims. Further, not all of the structures described below are necessarily constituent elements of the present invention.

[0032] 1. Light-emitting device

[0033] 1.1. Structure

[0034] First, the light-emitting device of the present embodiment will be described with reference to the drawings. Figure 1is a cross-sectional view schematically showing the light-emitting device 100 of the present embodiment. Figure 2 is a top view schematically showing the light-emitting device 100 of the present embodiment. In addition, Figure 1 is Figure 2 a cross-sectional view taken along line I-I of

[0035] As Figure 1 and Figure 2 shown, the light-emitting device 100 includes, for example, a driving substrate 10, a first connection pad 12, a second connection pad 14, a light-emitting element 102, a connection portion 104, a protective layer 60, a third metal layer 70, and a light-transmitting member 80.

[0036] In addition, for convenience, in Figure 2 , illustrations of components other than the first stack 20, the first electrode 30, the first contact hole 42, the first metal layer 50, the second stack 21 of the connection portion 104, the conductive layer 31, the second metal layer 51, and the light-transmitting member 80 of the light-emitting element 102 are omitted. The same applies to Figure 15 described later.

[0037] The driving substrate 10 is, for example, a silicon substrate. For example, the driving substrate 10 is provided with a driving circuit for driving the light-emitting element 102. The driving circuit is constituted by, for example, an IC (Integrated Circuit).

[0038] As Figure 1 shown, the first connection pad 12 and the second connection pad 14 are provided on the driving substrate 10. The first connection pad 12 and the second connection pad 14 are separated from each other. The first connection pad 12 and the second connection pad 14 may also constitute a driving circuit. The first connection pad 12 and the second connection pad 14 each have, for example, a first layer 16 and a second layer 18. The first layer 16 is provided on the driving substrate 10. The first layer 16 is, for example, a layer formed by laminating a Ti layer and a Pt layer in this order from the side of the driving substrate 10. The second layer 18 is provided on the first layer 16. The second layer 18 is, for example, an Au layer, an Al layer, or a Cu layer.

[0039] The light-emitting element 102 is provided on the first connection pad 12. The light-emitting element 102 is, for example, mounted with the junction down. The light-emitting element 102 is, for example, an LED. The light-emitting element 102 has, for example, a first stack 20, a first electrode 30, a second electrode 32, an insulating layer 40, and a first metal layer 50.

[0040] The first stack 20 is provided between the first electrode 30 and the second electrode 32. The first stack 20 is provided on the first electrode 30. Here, Figure 3 is an enlarged view showing the vicinity of the first stack 20 and the second stack 21 of Figure 1 . AsFigure 3 As shown, the first laminate 20 has a first tapered portion 2, which has a tapered shape with a width that increases as it goes from the first electrode 30 side to the second electrode 32 side. The width of the first tapered portion 2 gradually increases as it goes from the first electrode 30 side to the second electrode 32 side. In the illustrated example, the shape of the first tapered portion 2 is trapezoidal. In addition, the width refers to the size in the direction orthogonal to the lamination direction (hereinafter, also simply referred to as the "lamination direction") of the first semiconductor layer 22 and the first quantum well layer 24 of the first laminate 20. The first side surface 4 of the first tapered portion 2 is inclined with respect to the lamination direction. The first side surface 4 of the first tapered portion 2 constitutes the side surface of the first laminate 20.

[0041] The first laminate 20 includes a first semiconductor layer 22, a first quantum well layer 24, and a second semiconductor layer 26. The first semiconductor layer 22, the first quantum well layer 24, and the second semiconductor layer 26 constitute the first tapered portion 2. The first semiconductor layer 22, the first quantum well layer 24, and the second semiconductor layer 26 are, for example, group III nitride semiconductors and have a wurtzite crystal structure.

[0042] The first semiconductor layer 22 is provided on the first electrode 30. The first semiconductor layer 22 is provided between the first electrode 30 and the first quantum well layer 24. The first semiconductor layer 22 has a first conductivity type. The first semiconductor layer 22 is, for example, a p-type GaN layer doped with Mg.

[0043] The first quantum well layer 24 is provided on the first semiconductor layer 22. The first quantum well layer 24 is provided between the first semiconductor layer 22 and the second semiconductor layer 26. The first quantum well layer 24 has an i-type conductivity type in which impurities are not intentionally doped. The first quantum well layer 24 generates light when a current is injected. The first quantum well layer 24 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The first quantum well layer 24 has an MQW (Multiple Quantum Well) structure composed of a well layer and a barrier layer.

[0044] In addition, the number of the well layer and the barrier layer constituting the first quantum well layer 24 is not particularly limited. For example, only one well layer may be provided, and in this case, the first quantum well layer 24 has an SQW (Single Quantum Well) structure.

[0045] The second semiconductor layer 26 is provided on the first quantum well layer 24. The second semiconductor layer 26 is provided between the first quantum well layer 24 and the second electrode 32. The second semiconductor layer 26 is provided between the first semiconductor layer 22 and the second electrode 32. In the illustrated example, the size of the second semiconductor layer 26 in the stacking direction is larger than the size of the first semiconductor layer 22 in the stacking direction. The second semiconductor layer 26 has a second conductivity type different from the first conductivity type. The second semiconductor layer 26 is, for example, an n-type GaN layer doped with Si.

[0046] The second semiconductor layer 26 has a contact surface 28 in contact with the second electrode 32. For example, a plurality of convex portions 29 are provided on the contact surface 28. The plurality of convex portions 29 are provided periodically, for example. The height of the convex portion 29 is, for example, 400 nm or more. The interval between the ends of adjacent convex portions 29 is, for example, 230 nm or less. The plurality of convex portions 29 may also form a moth-eye structure. In the illustrated example, the first laminate 20 is composed of the first tapered portion 2 and the plurality of convex portions 29. By the plurality of convex portions 29, in the direction from the second semiconductor layer 26 toward the second electrode 32, the change in refractive index can be made gentle at the interface between the second semiconductor layer 26 and the second electrode 32. Thereby, the light reflected at the interface between the second semiconductor layer 26 and the second electrode 32 can be reduced. In addition, although not shown, the plurality of convex portions 29 may be provided randomly.

[0047] In the light-emitting element 102, a pin diode is formed by the p-type first semiconductor layer 22, the i-type first quantum well layer 24, and the n-type second semiconductor layer 26. In the light-emitting element 102, when a forward bias voltage of the pin diode is applied between the first electrode 30 and the second electrode 32, current is injected into the first quantum well layer 24, and recombination of electrons and holes occurs in the first quantum well layer 24. By this recombination, light is generated in the first quantum well layer 24.

[0048] The first electrode 30 is provided on the first connection pad 12. The first electrode 30 is provided between the driving substrate 10 and the first semiconductor layer 22. The first electrode 30 is electrically connected to the first semiconductor layer 22. The first semiconductor layer 22 may be in ohmic contact with the first electrode 30. As the first electrode 30, for example, an electrode formed by laminating a Pd layer, a Pt layer, and an Au layer in this order from the side of the first semiconductor layer 22 is used.

[0049] The first electrode 30 is one electrode for injecting current into the first quantum well layer 24. For example, the potential of a data signal is applied to the first electrode 30. The first electrode 30 reflects the light generated by the first quantum well layer 24 toward the second electrode 32 side.

[0050] The second electrode 32 is provided on the side of the first stack 20 and the second stack 21 opposite to the driving substrate 10. The second electrode 32 is provided on the second semiconductor layer 26 of the first stack 20 and the fourth semiconductor layer 27 of the second stack 21. The second electrode 32 is disposed opposite to the driving substrate 10. The second electrode 32 is electrically connected to the second semiconductor layer 26. The second semiconductor layer 26 may also be in ohmic contact with the second electrode 32. The second electrode 32 has light transmissivity. Specifically, the second electrode 32 allows the light generated by the first quantum well layer 24 to pass through. The light generated by the first quantum well layer 24 is emitted from the side of the second electrode 32. The material of the second electrode 32 is, for example, ITO (Indium Tin Oxide).

[0051] The second electrode 32 is another electrode for injecting current into the first quantum well layer 24. A constant potential is applied to the second electrode 32, for example. A ground potential may also be applied to the second electrode 32.

[0052] The insulating layer 40 is provided on the first side surface 4 of the first stack 20. The insulating layer 40 is provided on the entire surface of the first side surface 4. In the illustrated example, the insulating layer 40 is also provided on a part of the lower surface of the second electrode 32 and a part of the lower surface of the first electrode 30. The insulating layer 40 surrounds the first stack 20 in a plan view. In other words, when viewed from the stacking direction, the insulating layer 40 surrounds the first stack 20. The insulating layer 40 has light transmissivity. Specifically, the insulating layer 40 allows the light generated by the first quantum well layer 24 to pass through. The insulating layer 40 is, for example, a SiO2 layer.

[0053] A first contact hole 42 is formed in the insulating layer 40. In Figure 2 the illustrated example, the plan view shape of the first contact hole 42 is circular. The first contact hole 42 overlaps with the first electrode 30 in a plan view.

[0054] As Figure 3 shown, the first metal layer 50 is provided on the insulating layer 40. The first metal layer 50 is provided from the portion of the insulating layer 40 provided on the lower surface of the first electrode 30 to the portion provided on the lower surface of the second electrode 32. The first metal layer 50 is also provided in the first contact hole 42. The first metal layer 50 is electrically separated from the second electrode 32 through the insulating layer 40. The first metal layer 50 surrounds the first stack 20 in a plan view, for example.

[0055] The first metal layer 50 is connected to the first electrode 30. The first metal layer 50 is also connected to the first pad 12. The first metal layer 50 can also be eutectically bonded to the first pad 12. The first metal layer 50 can also perform Au-Au bonding, Al-Al bonding, or Cu-Cu bonding with the first pad 12. The first pad 12 is electrically connected to the first electrode 30 via the first metal layer 50. The first metal layer 50 is, for example, an Au layer, an Al layer, or a Cu layer. The first metal layer 50 reflects the light generated by the first quantum well layer 24 toward the first stack 20 side.

[0056] The connecting portion 104 is provided on the second pad 14. The connecting portion 104 is provided between the second pad 14 and the second electrode 32. The connecting portion 104 connects the second pad 14 and the second electrode 32. The connecting portion 104, for example, includes a second stack 21, a conductive layer 31, and a second metal layer 51.

[0057] The second stack 21 is provided between the conductive layer 31 and the second electrode 32. The second stack 21 is provided on the conductive layer 31. The second stack 21 is separated from the first stack 20. The shape of the second stack 21 is, for example, the same as the shape of the first stack 20. The second stack 21 has a second tapered portion 3. The second side surface 5 of the second tapered portion 3 constitutes the side surface of the second stack 21.

[0058] The second stack 21 includes a third semiconductor layer 23, a second quantum well layer 25, and a fourth semiconductor layer 27. The third semiconductor layer 23, the second quantum well layer 25, and the fourth semiconductor layer 27 constitute the second tapered portion 3.

[0059] The third semiconductor layer 23 is provided on the conductive layer 31. The third semiconductor layer 23 is provided between the conductive layer 31 and the second quantum well layer 25. The thickness of the third semiconductor layer 23 is, for example, the same as the thickness of the first semiconductor layer 22. The material of the third semiconductor layer 23 is, for example, the same as the material of the first semiconductor layer 22.

[0060] The second quantum well layer 25 is provided on the third semiconductor layer 23. The second quantum well layer 25 is provided between the third semiconductor layer 23 and the fourth semiconductor layer 27. The thickness of the second quantum well layer 25 is, for example, the same as the thickness of the first quantum well layer 24. The material of the second quantum well layer 25 is, for example, the same as the material of the first quantum well layer 24. In the connecting portion 104, the third semiconductor layer 23 and the fourth semiconductor layer 27 are short-circuited by the second metal layer 51. Therefore, no light is generated in the second quantum well layer 25.

[0061] The fourth semiconductor layer 27 is provided on the second quantum well layer 25. The fourth semiconductor layer 27 is provided between the second quantum well layer 25 and the second electrode 32. The fourth semiconductor layer 27 is provided between the third semiconductor layer 23 and the second electrode 32. The thickness of the fourth semiconductor layer 27 is, for example, the same as the thickness of the second semiconductor layer 26. The material of the fourth semiconductor layer 27 is, for example, the same as the material of the second semiconductor layer 26. The fourth semiconductor layer 27 has, for example, a plurality of convex portions 29.

[0062] The conductive layer 31 is provided on the second pad 14. The conductive layer 31 is provided between the driving substrate 10 and the third semiconductor layer 23. The thickness of the conductive layer 31 is, for example, the same as the thickness of the first electrode 30. The material of the conductive layer 31 is, for example, the same as the material of the first electrode 30.

[0063] The second metal layer 51 is provided on the second side surface 5 of the second laminate 21. The second metal layer 51 is provided on the entire surface of the second side surface 5. In the illustrated example, the second metal layer 51 is also provided on a part of the lower surface of the second electrode 32 and on the entire lower surface of the conductive layer 31. The second metal layer 51 surrounds, for example, the second laminate 21 in a plan view.

[0064] The second metal layer 51 is connected to the conductive layer 31. The second metal layer 51 is also connected to the second pad 14. The second metal layer 51 may be eutectically bonded to the second pad 14. The second metal layer 51 may be Au-Au bonded, Al-Al bonded, or Cu-Cu bonded to the second pad 14. The second metal layer 51 is also connected to the second electrode 32. The thickness of the second metal layer 51 is, for example, the same as the thickness of the first metal layer 50. The material of the second metal layer 51 is, for example, the same as the material of the first metal layer 50. The second electrode 32 is electrically connected to the second pad 14 via the second metal layer 51. The second electrode 32 is provided on the side of the first laminate 20 and the second laminate 21 opposite to the driving substrate 10.

[0065] In addition, the second metal layer 51 may not be provided on the entire surface of the second side surface 5 of the second laminate 21 as long as it can short-circuit the third semiconductor layer 23 and the fourth semiconductor layer 27. Although not shown, the second metal layer 51 may be provided only in a part of the region including the side surface of the second quantum well layer 25. In this case, the second electrode 32 is electrically connected to the second pad 14 via the fourth semiconductor layer 27, the second metal layer 51, the third semiconductor layer 23, and the conductive layer 31.

[0066] However, when considering voltage drop, it is preferable that, as Figure 3 shown, the second metal layer 51 is provided on a part of the lower surface of the second electrode 32, on the entire surface of the second side surface 5, and on the entire lower surface of the conductive layer 31 to electrically connect the second pad 14 and the second electrode 32.

[0067] As Figure 1 shown, a protective layer 60 is provided between the driving substrate 10 and the second electrode 32. The protective layer 60 surrounds, for example, the first stacked body 20 and the second stacked body 21 in a plan view. The protective layer 60 is provided between the first stacked body 20 and the second stacked body 21. In the illustrated example, the protective layer 60 is separated from the driving substrate 10 with a gap therebetween. The protective layer 60 is, for example, a SiO2 layer. The protective layer 60 protects the first stacked body 20 from foreign matters and the like. The protective layer 60 can also reduce the possibility of disconnection of the second electrode 32.

[0068] As Figure 3 shown, a second contact hole 62 and a third contact hole 64 are formed in the protective layer 60. The second contact hole 62 overlaps with the first metal layer 50 in a plan view. In the illustrated example, a second layer 18 of the first connection pad 12 is provided in the second contact hole 62. The third contact hole 64 overlaps with the second metal layer 51 in a plan view. In the illustrated example, a second layer 18 of the second connection pad 14 is provided in the third contact hole 64.

[0069] As Figure 1 shown, a third metal layer 70 is provided on a side of the second electrode 32 opposite to the driving substrate 10. In the illustrated example, the third metal layer 70 is provided on the second electrode 32 with a bonding layer 72 therebetween. The bonding layer 72 is, for example, a TiN layer. The bonding layer 72 improves the adhesion between the second electrode 32 and the third metal layer 70. The third metal layer 70 does not overlap with the first stacked body 20 in a plan view, for example. The third metal layer 70 is, for example, an Al layer.

[0070] The third metal layer 70 has a reflective surface 74. The reflective surface 74 is a side surface of the third metal layer 70. In the illustrated example, the reflective surface 74 is located on an extension line of a first side surface 4 of the first tapered portion 2. The inclination of the reflective surface 74 with respect to the stacking direction is, for example, the same as the inclination of the first side surface 4 with respect to the stacking direction. The reflective surface 74 reflects light generated by the first quantum well layer 24 toward the light transmissive member 80 side.

[0071] A light transmissive member 80 is provided on a side of the second electrode 32 opposite to the driving substrate 10. The light transmissive member 80 is provided on the bonding layer 72. The light transmissive member 80 is in contact with the reflective surface 74 of the third metal layer 70. The third metal layer 70 surrounds the light transmissive member 80 in a plan view, for example. The material of the light transmissive member 80 is, for example, SiON. The light transmissive member 80 allows light that has passed through the second electrode 32 to pass through. The light transmissive member 80 allows light reflected by the reflective surface 74 to pass through.

[0072] The light-transmitting member 80 has a light-emitting surface 82 that emits light generated by the first quantum well layer 24. The light-emitting surface 82 is the surface of the light-transmitting member 80 on the side opposite to the driving substrate 10. The light-emitting surface 82 is, for example, a curved surface. In the illustrated example, the light-emitting surface 82 is a convex surface.

[0073] In addition, in the above, an example in which the first conductivity type is p-type and the second conductivity type is n-type has been described, but the first conductivity type may be n-type and the second conductivity type may be p-type.

[0074] In addition, the above has described an example in which there is a gap between the driving substrate 10 and the protective layer 60, but the driving substrate 10 and the protective layer 60 may be in contact with each other. In this case, the first connection pad 12 and the second connection pad 14 may be embedded in the driving substrate 10. The first connection pad 12 and the light-emitting element 102 may also be connected to each other by hybrid bonding. The second connection pad 14 and the connection portion 104 may also be connected to each other by hybrid bonding.

[0075] In addition, in the above, an example in which the first metal layer 50 is provided in the first contact hole 42 has been described, but as long as the first connection pad 12 is electrically connected to the first electrode 30, the first connection pad 12 may be provided in the first contact hole 42 instead of the first metal layer 50.

[0076] In addition, in the above, the InGaN-based first quantum well layer 24 has been described, but as the first quantum well layer 24, various material systems that can emit light by injecting current according to the wavelength of the emitted light can be used. For example, semiconductor materials such as AlGaN-based, AlGaAs-based, InGaAs-based, InGaAsP-based, InP-based, GaP-based, and AlGaP-based can be used.

[0077] 1.2. Effects

[0078] In the light-emitting device 100, it includes a driving substrate 10, a first connection pad 12 provided on the driving substrate 10, a first electrode 30 provided on the first connection pad 12, a first laminate 20 provided on the first electrode 30, an insulating layer 40 provided on the first side surface 4 of the first laminate 20, and a first metal layer 50 provided on the insulating layer 40. Moreover, the light-emitting device 100 includes: a second connection pad 14, which is provided on the driving substrate 10 and separated from the first connection pad 12; a conductive layer 31 provided on the second connection pad 14; a second laminate 21 provided on the conductive layer 31; and a second metal layer 51 provided on the second side surface 5 of the second laminate 21. And the light-emitting device 100 includes a second electrode 32, which is provided on the side of the first laminate 20 and the second laminate 21 opposite to the driving substrate 10 and is electrically connected to the second connection pad 14 via the second metal layer 51.

[0079] Therefore, in the light-emitting device 100, the first laminate 20 and the second laminate 21 can be formed by the same process, the first electrode 30 and the conductive layer 31 can be formed by the same process, and the first metal layer 50 and the second metal layer 51 can be formed by the same process. As a result, an additional manufacturing process does not need to be added for the electrical connection between the second electrode 32 and the second connection pad 14. Therefore, for example, compared with the case where the second electrode and the second connection pad are electrically connected by bumps or the like, the manufacturing process can be shortened. And the manufacturing cost can be reduced.

[0080] In the light-emitting device 100, a constant potential is applied to the second electrode 32. Therefore, in the light-emitting device 100, the amount of current injected into the first quantum well layer 24 can be adjusted by the potential of the first electrode 30.

[0081] In the light-emitting device 100, the first laminate 20 has a first tapered portion 2 that becomes wider as it goes from the first electrode 30 side to the second electrode 32 side. Therefore, in the light-emitting device 100, on the first side surface 4 of the first tapered portion 2, the light generated by the first quantum well layer 24 can be reflected toward the second electrode 32 side.

[0082] In the light-emitting device 100, a third metal layer 70 is included. The third metal layer 70 is provided on the side of the second electrode 32 opposite to the driving substrate 10 and has a reflecting surface 74 that reflects the light generated in the first quantum well layer 24. The reflecting surface 74 is located on the extension line of the first side surface 4 of the first tapered portion 2. Therefore, in the light-emitting device 100, the light that has passed through the second electrode 32 can be prevented from leaking to the outside, and light with a narrower emission angle can be emitted.

[0083] In the light-emitting device 100, a light-transmitting member 80 is included that is provided on the side of the second electrode 32 opposite to the first laminate 20 and is in contact with the reflecting surface 74. Therefore, in the light-emitting device 100, the light that has passed through the light-transmitting member 80 and is incident on the reflecting surface 74 can be more reliably reflected toward the light-transmitting member 80 side at the reflecting surface 74.

[0084] In the light-emitting device 100, the emission surface 82 of the light-transmitting member 80 on the side opposite to the driving substrate 10 is a curved surface. Therefore, in the light-emitting device 100, the light-transmitting member 80 can function as a lens.

[0085] In the light-emitting device 100, the insulating layer 40 has light-transmitting properties. Therefore, in the light-emitting device 100, even if the light generated by the first quantum well layer 24 passes through the light-transmitting insulating layer 40, the light that has passed through the insulating layer 40 can be reflected toward the first laminate 20 side by the first metal layer 50.

[0086] 2. Manufacturing method of the light-emitting device

[0087] Next, a method for manufacturing the light-emitting device 100 of the present embodiment will be described with reference to the accompanying drawings. Figure 4 It is a flowchart for explaining the manufacturing method of the light-emitting device 100 of the present embodiment. Figures 5 to 14 It is a cross-sectional view schematically showing the manufacturing process of the light-emitting device 100 of the present embodiment.

[0088] As Figure 4 and Figure 5 shown, on the growth substrate 90, semiconductor layers 110, 112, and 114 are sequentially epitaxially grown (step S1). As the epitaxial growth method, for example, MOCVD (Metal Organic Chemical Vapor Deposition) method, MBE (Molecular Beam Epitaxy) method, etc. can be cited.

[0089] The growth substrate 90 is a substrate for epitaxially growing the semiconductor layers 110, 112, and 114. The growth substrate 90 has, for example, a support substrate 92 and a buffer layer 94 provided on the support substrate 92. The support substrate 92 is, for example, a silicon substrate or a sapphire substrate. The buffer layer 94 is, for example, a GaN layer.

[0090] Next, a conductive layer 116 is formed on the semiconductor layer 114 (step S2). The conductive layer 116 is formed, for example, by vacuum evaporation method, sputtering method, CVD (Chemical Vapor Deposition) method.

[0091] As Figure 6 shown, the conductive layer 116 and the semiconductor layers 110, 112, and 114 are patterned (step S3). The patterning is performed, for example, by photolithography and dry etching. The semiconductor layer 110 is patterned to become the second semiconductor layer 26 and the fourth semiconductor layer 27. The semiconductor layer 112 is patterned to become the first quantum well layer 24 and the second quantum well layer 25. The semiconductor layer 114 is patterned to become the first semiconductor layer 22 and the third semiconductor layer 23. The conductive layer 116 is patterned to become the first electrode 30 and the conductive layer 31.

[0092] Through this process, the first laminate 20 and the second laminate 21 that are separated from each other can be formed on the growth substrate 90. And, the first electrode 30 can be formed on the first laminate 20, and the conductive layer 31 can be formed on the second laminate 21.

[0093] As Figure 7As shown, an insulating layer 40 is formed on the first side surface 4 of the first laminate 20 (step S4). The insulating layer 40 is formed, for example, by CVD method or ALD (Atomic Layer Deposition) method. Specifically, after the insulating layer 40 is formed over the entire surface, the insulating layer 40 is patterned to remove the insulating layer 40 formed on the second side surface 5 of the second laminate 21 and the insulating layer 40 formed on the upper surface of the conductive layer 31. Further, through the patterning of the insulating layer 40, a first contact hole 42 is formed. The patterning is performed, for example, by photolithography and etching. Alternatively, the insulating layer 40 may not be formed on the second side surface 5 of the second laminate 21 by a lift-off method.

[0094] As Figure 8 shown, a metal layer 118 is formed on the insulating layer 40 and the second side surface 5 of the second laminate 21 (step S5). Specifically, the metal layer 118 is formed over the entire surface. The metal layer 118 is formed, for example, by vacuum evaporation method or sputtering method.

[0095] As Figure 9 shown, a resist layer 120 having a predetermined shape is formed so as to cover the first laminate 20 and the second laminate 21 (step S6). The resist layer 120 is formed by coating, exposure, and development.

[0096] As Figure 10 shown, the metal layer 118 and the insulating layer 40 are dry-etched using the resist layer 120 as a mask (step S7). The metal layer 118 is patterned to be a first metal layer 50 and a second metal layer 51. Through this process, the first metal layer 50 can be formed on the insulating layer 40, and the second metal layer 51 can be formed on the second side surface 5 of the second laminate 21.

[0097] As Figure 11 shown, the resist layer 120 is removed (step S8). The method for removing the resist layer 120 is not particularly limited.

[0098] As Figure 12 shown, a protective layer 60 is formed so as to cover the first laminate 20 and the second laminate 21 (step S9). The protective layer 60 is formed, for example, by CVD method or spin coating method, and is planarized using a CMP (Chemical Mechanical Polishing) apparatus or the like. Thereafter, the protective layer 60 is patterned to form a second contact hole 62 and a third contact hole 64. The patterning is performed, for example, by photolithography and etching.

[0099] Through this process, a structure 106 having a first laminate 20, a second laminate 21, a first electrode 30, a conductive layer 31, an insulating layer 40, a first metal layer 50, a second metal layer 51, a protective layer 60, and a growth substrate 90 can be formed.

[0100] As Figure 13 shown, the structure 106 is joined to a drive substrate 10 provided with a first connection pad 12 and a second connection pad 14 separated from each other in such a manner that the first electrode 30 faces the first connection pad 12 and the conductive layer 31 faces the second connection pad 14 (step S10). Specifically, the first electrode 30 and the conductive layer 31 are oriented toward the drive substrate 10 side, and the structure 106 is mounted downward. In the illustrated example, the first electrode 30 faces the first connection pad 12 with the first metal layer 50 therebetween. The conductive layer 31 faces the second connection pad 14 with the second metal layer 51 therebetween. Examples of joining include eutectic bonding, Au-Au bonding, Al-Al bonding, Cu-Cu bonding, and bonding using solder. The drive circuit of the drive substrate 10 is formed by implanting impurity ions into a silicon substrate, forming a silicon oxide layer, and patterning the connection pads 12 and 14.

[0101] As Figure 14 shown, the growth substrate 90 is removed (step S11). The removal of the growth substrate 90 is performed, for example, by etching, CMP, etc. Thereby, the first laminate 20 and the second laminate 21 are exposed. Specifically, the second semiconductor layer 26 and the fourth semiconductor layer 27 are exposed.

[0102] Next, the second semiconductor layer 26 and the fourth semiconductor layer 27 are patterned to form a plurality of convex portions 29 (step S12). The patterning is performed, for example, by photolithography and etching.

[0103] As Figure 1 shown, a second electrode 32 is formed on the first laminate 20 and the second laminate 21 (step S13). Specifically, the second electrode 32 is formed on the second semiconductor layer 26 and the fourth semiconductor layer 27. The second electrode 32 is formed, for example, by vacuum evaporation, sputtering.

[0104] Next, a third metal layer 70 is formed on the second electrode 32 with a bonding layer 72 therebetween (step S14). The third metal layer 70 and the bonding layer 72 are formed, for example, by sputtering, CVD, vacuum evaporation, plating.

[0105] Next, a light-transmitting member 80 is formed on the second electrode 32 (step S15). The light-transmitting member 80 is formed, for example, by CVD. Then, the light-transmitting member 80 is patterned to form an emission surface 82 that is a curved surface. The patterning is performed, for example, by photolithography and etching.

[0106] Through the above processes, the light-emitting device 100 can be manufactured.

[0107] In the manufacturing method of the light-emitting device 100, the following processes are included: forming the mutually separated first stacked body 20 and second stacked body 21 on the growth substrate 90 as the first substrate; forming the first electrode 30 on the first stacked body 20 and forming the conductive layer 31 on the second stacked body 21; forming the insulating layer 40 on the first side surface 4 of the first stacked body 20; forming the first metal layer 50 on the insulating layer 40 and forming the second metal layer 51 on the second side surface 5 of the second stacked body 21; bonding the structure 106 and the driving substrate 10 as the second substrate provided with the mutually separated first connection pad 12 and second connection pad 14 in such a manner that the first electrode 30 faces the first connection pad 12 and the conductive layer 31 faces the second connection pad 14; removing the growth substrate 90 to expose the first stacked body 20 and the second stacked body 21; and forming the second electrode 32 on the first stacked body 20 and the second stacked body 21.

[0108] Therefore, in the manufacturing method of the light-emitting device 100, additional manufacturing processes do not need to be added for the electrical connection between the second electrode 32 and the second connection pad 14, so the manufacturing process can be shortened.

[0109] 3. Modification Example of the Light-Emitting Device

[0110] Next, the light-emitting device of the modification example of the present embodiment will be described with reference to the drawings. Figure 15 It is a top view schematically showing the light-emitting device 200 of the modification example of the present embodiment.

[0111] Hereinafter, in the light-emitting device 200 of the modification example of the present embodiment, components having the same functions as those of the components of the light-emitting device 100 of the above-described present embodiment are denoted by the same reference numerals, and their detailed descriptions are omitted.

[0112] In the light-emitting device 100, as Figure 2 shown, only one light-emitting element 102 is provided. Only one connection portion 104 is provided.

[0113] In contrast, in the light-emitting device 200, as Figure 15 shown, a plurality of light-emitting elements 102 are provided. A plurality of connection portions 104 are provided.

[0114] A plurality of light-emitting elements 102 are arranged in a matrix, for example. In the illustrated example, nine light-emitting elements 102 are provided, but the number thereof is not particularly limited. Although not illustrated, among the plurality of light-emitting elements 102, the second electrodes 32 are continuous with each other. Among the plurality of light-emitting elements 102, the second electrodes 32 are integrally provided. A plurality of first connection pads 12 are provided corresponding to the plurality of light-emitting elements 102. A plurality of light-transmitting members 80 are provided corresponding to the plurality of light-emitting elements 102. The plurality of light-transmitting members 80 may also form a microlens array.

[0115] The second laminate 21 of the connection portion 104 is provided between the first laminate 20 of one of the adjacent light-emitting elements 102 and the first laminate 20 of the other light-emitting element 102 in a plan view. In the illustrated example, four connection portions 104 are provided, but the number thereof is not particularly limited. For example, light-emitting elements 102 are provided at the four corners of one connection portion 104. Although not illustrated, a plurality of second connection pads 14 are provided corresponding to the plurality of connection portions 104.

[0116] In the light-emitting device 200, a plurality of light-emitting elements 102 having a first laminate 20, an insulating layer 40, and a first metal layer 50 are provided, and the second laminate 21 is provided between the first laminate 20 of one of the adjacent light-emitting elements 102 and the first laminate 20 of the other light-emitting element 102 in a plan view. Therefore, in the light-emitting device 200, a space does not need to be separately provided for forming the second laminate 21. As a result, miniaturization can be achieved.

[0117] 4. Projector

[0118] Next, a projector as an electronic device according to the present embodiment will be described with reference to the drawings. Figure 16 FIG. schematically shows a projector 700 according to the present embodiment.

[0119] The projector 700 has, for example, a light-emitting device 200 as a light source.

[0120] The projector 700 has a housing (not illustrated) and a red light source 200R, a green light source 200G, and a blue light source 200B that are provided in the housing and emit red light, green light, and blue light, respectively. In addition, for convenience, in Figure 16 the red light source 200R, the green light source 200G, and the blue light source 200B are simply illustrated.

[0121] The projector 700 also has, for example, a first optical element 702R, a second optical element 702G, a third optical element 702B, a first light modulation device 704R, a second light modulation device 704G, a third light modulation device 704B, and a projection device 708 disposed within the housing. The first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B are, for example, transmissive liquid crystal light valves. The projection device 708 is, for example, a projection lens.

[0122] The light emitted from the red light source 200R is incident on the first optical element 702R. The light emitted from the red light source 200R is condensed by the first optical element 702R. In addition, the first optical element 702R may have functions other than light condensation. The second optical element 702G and the third optical element 702B may also have functions other than light condensation.

[0123] The light condensed by the first optical element 702R is incident on the first light modulation device 704R. The first light modulation device 704R modulates the incident light according to the image information. Then, the projection device 708 magnifies the image formed by the first light modulation device 704R and projects it onto the screen 710.

[0124] The light emitted from the green light source 200G is incident on the second optical element 702G. The light emitted from the green light source 200G is condensed by the second optical element 702G.

[0125] The light condensed by the second optical element 702G is incident on the second light modulation device 704G. The second light modulation device 704G modulates the incident light according to the image information. Then, the projection device 708 magnifies the image formed by the second light modulation device 704G and projects it onto the screen 710.

[0126] The light emitted from the blue light source 200B is incident on the third optical element 702B. The light emitted from the blue light source 200B is condensed by the third optical element 702B.

[0127] The light condensed by the third optical element 702B is incident on the third light modulation device 704B. The third light modulation device 704B modulates the incident light according to the image information. Then, the projection device 708 magnifies the image formed by the third light modulation device 704B and projects it onto the screen 710.

[0128] The projector 700 also has, for example, a cross dichroic prism 706 that synthesizes the light emitted from the first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B and guides it to the projection device 708.

[0129] Three kinds of color lights modulated by the first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B are incident on the cross dichroic prism 706. The cross dichroic prism 706 is formed by bonding four right-angled prisms, and dielectric multilayer films that reflect red light and transmit green and blue lights, and dielectric multilayer films that reflect blue light and transmit green and red lights are disposed on its inner surface. The three kinds of color lights are synthesized by these dielectric multilayer films to form light representing a color image. Then, the synthesized light is projected onto the screen 710 by the projection device 708 to display an enlarged image.

[0130] In addition, the red light source 200R, the green light source 200G, and the blue light source 200B can also control the light-emitting device 200 as pixels of an image according to image information, so as to directly form an image without using the first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B. Moreover, the projection device 708 can also magnify the image formed by the red light source 200R, the green light source 200G, and the blue light source 200B and project it onto the screen 710.

[0131] In addition, in the above example, a transmissive liquid crystal light valve is used as the light modulation device, but a light valve other than liquid crystal can also be used, and a reflective light valve can also be used. Examples of such a light valve include a reflective liquid crystal light valve and a digital micro mirror device. The structure of the projection device is appropriately changed according to the type of the light valve used.

[0132] In addition, the light source can also be applied to a light source device of a scanning type image display device having a scanning unit, and the scanning unit is an image forming device that displays an image of a desired size on the display surface by scanning light from the light source on the screen.

[0133] 5. Display

[0134] Next, the display of the electronic device according to the present embodiment will be described with reference to the drawings. Figure 17 It is a top view schematically showing the display 800 of the present embodiment. Figure 18 It is a cross-sectional view schematically showing the display 800 of the present embodiment. In addition, in Figure 17 As two mutually orthogonal axes, the X-axis and the Y-axis are illustrated. In addition, for convenience, in Figure 17 and Figure 18 the light-emitting device 200 is schematically illustrated in a simplified manner.

[0135] The display 800 has, for example, a light-emitting device 200 as a light source.

[0136] The display 800 is a display device that displays an image. The image includes an image that only displays text information. The display 800 is a self-luminous display. As Figure 17 and Figure 18 shown, the display 800 has, for example, a driving circuit 810, a lens array 820, and a heat sink 830.

[0137] The driving circuit 810 is provided on the driving substrate 10. The driving circuit 810 drives the light-emitting element 102 based on, for example, the input image information. The driving substrate 10 has, for example, a display area 812. The driving circuit 810 has a data line driving circuit 814, a scan line driving circuit 816, and a control circuit 818.

[0138] The display area 812 is composed of a plurality of pixels P. In the illustrated example, the pixels P are arranged along the X-axis and the Y-axis.

[0139] Although not shown, a plurality of scan lines and a plurality of data lines are provided on the driving substrate 10. For example, the scan lines extend along the X-axis, and the data lines extend along the Y-axis. The scan lines are connected to the scan line driving circuit 816. The data lines are connected to the data line driving circuit 814. The pixels P are provided corresponding to the intersections of the scan lines and the data lines.

[0140] One pixel P has, for example, one light-emitting element 102, one light-transmitting member 80, and a pixel circuit (not shown). The pixel circuit has a switching transistor that functions as a switch of the pixel P. The gate of the switching transistor is connected to the scan line, and one of the source and the drain is connected to the data line.

[0141] The data line driving circuit 814 and the scan line driving circuit 816 are circuits that control the driving of the light-emitting element 102 constituting the pixel P. The control circuit 818 controls the display of the image.

[0142] Image data is supplied from a higher-level circuit to the control circuit 818. The control circuit 818 provides various signals based on the image data to the data line driving circuit 814 and the scan line driving circuit 816.

[0143] When the scan line driving circuit 816 makes the scan signal valid and selects a scan line, the switching transistor of the selected pixel P is turned on. At this time, the data line driving circuit 814 supplies a data signal from the data line to the selected pixel P, so that the light-emitting element 102 of the selected pixel P emits light according to the data signal.

[0144] The lens array 820 is composed of a plurality of light-transmitting members 80. The heat sink 830 is in contact with the driving substrate 10. The material of the heat sink 830 is, for example, a metal such as copper or aluminum. The heat sink 830 dissipates the heat generated by the light-emitting element 102.

[0145] 6. Head-Mounted Display

[0146] 6.1. Overall Structure

[0147] Next, the head-mounted display, which is an electronic device according to this embodiment, will be described with reference to the accompanying drawings. Figure 19 FIG. is a perspective view schematically showing the head-mounted display 900 according to this embodiment.

[0148] As Figure 19 shown, the head-mounted display 900 is a head-mounted display having an appearance similar to that of glasses. The head-mounted display 900 is worn on the head of an observer. The observer refers to a user who uses the head-mounted display 900. The head-mounted display 900 enables the observer to visually confirm image light based on a virtual image and to visually confirm the outside image in a see-through manner.

[0149] The head-mounted display 900 includes, for example, a first display unit 910a, a second display unit 910b, a frame 920, a first temple 930a, and a second temple 930b.

[0150] The first display unit 910a and the second display unit 910b display images. Specifically, the first display unit 910a displays a virtual image for the right eye of the observer. The second display unit 910b displays a virtual image for the left eye of the observer. The display units 910a and 910b include, for example, an image forming device 911 and a light guiding device 915.

[0151] The image forming device 911 forms image light. The image forming device 911 includes, for example, an optical system such as a light source and a projection device, and an external component 912. The external component 912 houses the light source and the projection device.

[0152] The light guiding device 915 covers in front of the eyes of the observer. The light guiding device 915 guides the image light formed by the image forming device 911 and enables the observer to see the outside light and the image light overlappingly. In addition, the details of the image forming device 911 and the light guiding device 915 will be described later.

[0153] The frame 920 supports the first display unit 910a and the second display unit 910b. The frame 920 surrounds the display units 910a and 910b, for example. In the illustrated example, the image forming device 911 of the first display unit 910a is mounted on one end of the frame 920. The image forming device 911 of the second display unit 910b is mounted on the other end of the frame 920.

[0154] The first temple 930a and the second temple 930b extend from the frame 920. In the illustrated example, the first temple 930a extends from one end of the frame 920. The second temple 930b extends from the other end of the frame 920.

[0155] When the first temple 930a and the second temple 930b are worn on the observer, they are suspended on the observer's ears. The observer's head is located between the temples 930a and 930b.

[0156] 6.2. Image forming device and light guiding device

[0157] Figure 20 FIG. is a diagram schematically showing the image forming device 911 and the light guiding device 915 of the first display unit 910a of the head-mounted display 900. In addition, the first display unit 910a and the second display unit 910b have substantially the same structure. Therefore, the following description of the first display unit 910a can be applied to the second display unit 910b.

[0158] As Figure 20 shown, the image forming device 911 has, for example, a light emitting device 200 as a light source, a light modulation device 913, and a projection device 914 for imaging.

[0159] The light modulation device 913 modulates the light incident from the light emitting device 200 according to the image information and emits image light. The light modulation device 913 is a transmissive liquid crystal light valve. In addition, the light emitting device 200 may be a self-luminous type light emitting device that emits light according to the input image information. In this case, the light modulation device 913 is not provided.

[0160] The projection device 914 projects the image light emitted from the light modulation device 913 toward the light guiding device 915. The projection device 914 is, for example, a projection lens. As the lens constituting the projection device 914, a lens having an axisymmetric surface as a lens surface may also be used.

[0161] The light guiding device 915 is positioned with high precision relative to the projection device 914, for example, by being screwed to the lens barrel of the projection device 914. The light guiding device 915 has, for example, an image light guiding member 916 for guiding the image light and a perspective member 918 for perspective.

[0162] The image light emitted from the projection device 914 is incident on the image light guiding member 916. The image light guiding member 916 is a prism that guides the image light toward the observer's eyes. The image light incident on the image light guiding member 916 is repeatedly reflected on the inner surface of the image light guiding member 916 and then is reflected by the reflection layer 917 and emitted from the image light guiding member 916. The image light emitted from the image light guiding member 916 reaches the observer's eyes. The reflection layer 917 is made of, for example, metal or a dielectric multilayer film. The reflection layer 917 may also be a semi-reflective mirror.

[0163] The see-through member 918 is adjacent to the image light guide member 916. The see-through member 918 is fixed to the image light guide member 916. The outer surface of the see-through member 918 is continuous with, for example, the outer surface of the image light guide member 916. The see-through member 918 allows an observer to see through external light. Regarding the image light guide member 916, in addition to the function of guiding image light, it also has the function of allowing an observer to see through external light. In addition, the head-mounted display 900 may also have a structure that does not allow an observer to see through external light.

[0164] The light-emitting device of the above-described embodiment can also be used for applications other than projectors, displays, and head-mounted displays. The light-emitting device of the above-described embodiment is used, for example, for indoor and outdoor lighting, laser printers, scanners, light-using sensing devices, EVFs (Electronic View Finders), wearable displays such as smart watches, vehicle-mounted lights, and vehicle-mounted head-up displays.

[0165] The above-described embodiments and modifications are examples and are not limited thereto. For example, the embodiments and the modifications can be appropriately combined.

[0166] The present invention includes a structure that is substantially the same as the structure described in the embodiment, for example, a structure having the same function, method, and result, or a structure having the same purpose and effect. In addition, the present invention includes a structure in which non-essential parts of the structure described in the embodiment are replaced. In addition, the present invention includes a structure that exhibits the same effects as the structure described in the embodiment or a structure that can achieve the same purpose. In addition, the present invention includes a structure in which a known technique is added to the structure described in the embodiment.

[0167] The following can be derived from the above-described embodiments and modifications.

[0168] One embodiment of the light-emitting device includes: a substrate; a first connection pad disposed on the substrate; a first electrode disposed on the first connection pad; a first stack disposed on the first electrode; an insulating layer disposed on a side surface of the first stack; a first metal layer disposed on the insulating layer; a second connection pad disposed on the substrate and separated from the first connection pad; a conductive layer disposed on the second connection pad; a second stack disposed on the conductive layer; a second metal layer disposed on a side surface of the second stack; and a second electrode disposed on a side of the first stack and the second stack opposite to the substrate, and electrically connected to the second connection pad via the second metal layer. The first stack has: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type, disposed between the first semiconductor layer and the second electrode; and a first quantum well layer disposed between the first semiconductor layer and the second semiconductor layer. The second stack has: a third semiconductor layer of the first conductivity type; a fourth semiconductor layer of the second conductivity type, disposed between the third semiconductor layer and the second electrode; and a second quantum well layer disposed between the third semiconductor layer and the fourth semiconductor layer.

[0169] According to this light-emitting device, the manufacturing process can be shortened.

[0170] In one embodiment of the light-emitting device, the second electrode may be applied with a constant potential.

[0171] According to this light-emitting device, the amount of current injected into the first quantum well layer can be adjusted by the potential of the first electrode.

[0172] In one embodiment of the light-emitting device, the first stack may have a tapered portion that widens as it goes from the first electrode side to the second electrode side.

[0173] According to this light-emitting device, the light generated in the first quantum well layer can be reflected toward the second electrode side on the side surface of the tapered portion.

[0174] In one embodiment of the light-emitting device, the light-emitting device may include a third metal layer disposed on a side of the second electrode opposite to the substrate, having a reflecting surface that reflects the light generated in the first quantum well layer, and the reflecting surface is located on an extension line of the side surface of the tapered portion.

[0175] According to this light-emitting device, light leakage through the second electrode to the outside can be suppressed, and light with a narrower emission angle can be emitted.

[0176] In one aspect of the light-emitting device, the light-emitting device may include a light-transmitting member disposed on a side of the second electrode opposite to the first laminate and in contact with the reflecting surface.

[0177] According to this light-emitting device, at the reflecting surface, light incident on the reflecting surface through the light-transmitting member can be more reliably reflected toward the light-transmitting member side.

[0178] In one aspect of the light-emitting device, the surface of the light-transmitting member on the side opposite to the substrate may be a curved surface.

[0179] According to this light-emitting device, the light-transmitting member can function as a lens.

[0180] In one aspect of the light-emitting device, the insulating layer may have light-transmittance.

[0181] According to this light-emitting device, even if the light generated in the first quantum well layer passes through the light-transmitting insulating layer, the light passing through the insulating layer can be reflected to the first laminate side by the first metal layer.

[0182] In one aspect of the light-emitting device, a plurality of light-emitting elements each having the first laminate, the insulating layer, and the first metal layer may be provided, and the second laminate may be disposed between the first laminates of one of the adjacent light-emitting elements and the other light-emitting element in a plan view.

[0183] According to this light-emitting device, a separate space may not be provided for forming the second laminate.

[0184] One aspect of the electronic device has one aspect of the light-emitting device.

[0185] One aspect of the manufacturing method of a light-emitting device includes the following steps: forming a first laminate and a second laminate separated from each other on a first substrate; forming a first electrode on the first laminate and a conductive layer on the second laminate; forming an insulating layer on a side surface of the first laminate; forming a first metal layer on the insulating layer and a second metal layer on a side surface of the second laminate; bonding a structure having the first substrate, the first laminate, the second laminate, the first electrode, the conductive layer, the insulating layer, the first metal layer, and the second metal layer to a second substrate provided with a first connection pad and a second connection pad separated from each other such that the first electrode faces the first connection pad and the conductive layer faces the second connection pad; removing the first substrate to expose the first laminate and the second laminate; and forming a second electrode on the first laminate and the second laminate. The first laminate has: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type, which is provided between the first semiconductor layer and the second electrode; and a first quantum well layer, which is provided between the first semiconductor layer and the second semiconductor layer. The second laminate has: a third semiconductor layer of the first conductivity type; a fourth semiconductor layer of the second conductivity type, which is provided between the third semiconductor layer and the second electrode; and a second quantum well layer, which is provided between the third semiconductor layer and the fourth semiconductor layer.

[0186] According to this manufacturing method of the light-emitting device, the manufacturing process can be shortened.

Claims

1. A light emitting device, comprising: substrate; a first connection pad, which is disposed on the substrate; a first electrode disposed on the first connection pad; a first stacked body disposed on the first electrode; an insulating layer disposed on a side surface of the first stack; a first metal layer, disposed on the insulating layer; a second connection pad, which is disposed on the substrate and is separated from the first connection pad; A conductive layer disposed on the second connection pad; a second stacked body disposed on the conductive layer; a second metal layer provided on a side surface of the second stack; and a second electrode provided on a side of the first stack and the second stack opposite to the substrate and electrically connected to the second connection pad via the second metal layer; The first stacked body has: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type, disposed between the first semiconductor layer and the second electrode; as well as a first quantum well layer disposed between the first semiconductor layer and the second semiconductor layer, The second laminate has: a third semiconductor layer of the first conductivity type; the fourth semiconductor layer of the second conductivity type, which is provided between the third semiconductor layer and the second electrode; and The second quantum well layer is provided between the third semiconductor layer and the fourth semiconductor layer.

2. The light emitting device according to claim 1, wherein: A constant potential is applied to the second electrode.

3. The light emitting device according to claim 1, wherein: The first stack has a tapered portion whose width increases from the first electrode side toward the second electrode side.

4. The light emitting device according to claim 3, wherein: The light emitting device includes a third metal layer, which is provided on the side of the second electrode opposite to the substrate and has a reflection surface for reflecting light generated in the first quantum well layer. The reflecting surface is located on the extension line of the side surface of the tapered portion.

5. The light emitting device according to claim 4, wherein: The light emitting device includes a light-transmitting member provided on the side of the second electrode opposite to the first stack and in contact with the reflecting surface.

6. The light emitting device according to claim 5, wherein: A surface of the light-transmitting member opposite to the substrate is a curved surface.

7. The light emitting device according to claim 1, wherein: The insulating layer is light-transmissive.

8. The light emitting device according to claim 1, wherein: A plurality of light emitting elements including the first stack, the insulating layer, and the first metal layer are provided. The second stack is provided between the first stack of one of the adjacent light emitting elements and the first stack of the other light emitting element in a plan view. 9 . An electronic device comprising the light emitting device according to claim 1 .

10. A method for manufacturing a light emitting device, comprising the following steps: forming a first stacked body and a second stacked body separated from each other on a first substrate; forming a first electrode on the first stack and forming a conductive layer on the second stack; forming an insulating layer on a side surface of the first stack; forming a first metal layer on the insulating layer and forming a second metal layer on a side surface of the second stack; Joining a structure having the first substrate, the first stack, the second stack, the first electrode, the conductive layer, the insulating layer, the first metal layer, and the second metal layer to a second substrate provided with a first connection pad and a second connection pad separated from each other in a manner that the first electrode faces the first connection pad and the conductive layer faces the second connection pad; removing the first substrate to expose the first stack and the second stack; and forming a second electrode on the first stack and the second stack, The first stacked body has: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type, disposed between the first semiconductor layer and the second electrode; as well as a first quantum well layer disposed between the first semiconductor layer and the second semiconductor layer, The second laminate has: a third semiconductor layer of the first conductivity type; the fourth semiconductor layer of the second conductivity type, which is provided between the third semiconductor layer and the second electrode; and The second quantum well layer is provided between the third semiconductor layer and the fourth semiconductor layer.

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