Wafer processing device and wafer processing method

Abstract

The invention discloses a wafer processing device and a wafer processing method. The wafer processing apparatus includes a housing, a heating support, a gas dispersion head, a first gas source, a remote plasma system, and a second gas source. A processing space for processing a wafer is arranged in the shell. The heating support heats and supports the wafer in the processing space. The gas dispersion head is disposed on the top of the housing corresponding to the heating support. The first gas source is connected to the top of the processing space through a first pipe to provide a first gas in a first direction. The far-end plasma system is arranged between the gas dispersion head and the first gas source. The second gas source is connected to a side wall of the processing space through a second pipe to provide a second gas in a second direction perpendicular to the first direction. According to the wafer processing device and the wafer processing method provided by the invention, the uniformity and the pore penetration capability of a coating film can be improved.

Description

Technical Field

[0001] The present invention relates to a wafer processing apparatus and a wafer processing method, and more particularly to a wafer processing apparatus and a wafer processing method including a remote plasma system. Background Art

[0002] In semiconductor manufacturing processes, there are processes such as lithography, deposition, and etching. Taking Plasma Enhanced Atomic Layer Deposition (PEALD) as an example, reaction gases are supplied into a processing chamber to cause chemical reactions of the reaction gases on a wafer to form a deposited film.

[0003] However, as the size of semiconductor devices continues to shrink and the aspect ratio increases, existing wafer processing apparatuses are difficult to deposit a film uniformly and precisely on the surface of a wafer with a high aspect ratio. Therefore, the coating uniformity and the ability of pores to penetrate deeply in high-aspect-ratio structures still need to be improved.

[0004] Therefore, how to improve the coating uniformity and the ability of pores to penetrate deeply through the improvement of structural design to overcome the above-mentioned defects has become one of the important issues that this industry wants to solve. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a wafer processing apparatus in view of the deficiencies of the prior art. The wafer processing apparatus includes: a housing having a processing space for processing a wafer therein; a heating support member for heating and supporting the wafer in the processing space; a gas dispersion head disposed corresponding to the heating support member at the top of the housing; a first gas source connected to the top of the processing space through a first pipe to provide a first gas in a first direction; a second gas source connected to the side wall of the processing space through a second pipe to provide a second gas in a second direction perpendicular to the first direction; and a remote plasma system disposed between the gas dispersion head and the first gas source.

[0006] Furthermore, the first pipe includes a first section connecting the first gas source and the remote plasma system and a second section connecting the remote plasma system and the processing space.

[0007] Furthermore, the first section is configured in an S shape, and the second section has a right angle.

[0008] Further, the wafer processing apparatus further includes an air extraction device disposed at the top of the processing space. The air extraction device includes a plurality of air extraction channels, and the plurality of air extraction channels are alternately arranged with a plurality of air inlet channels above the heating support.

[0009] Further, the wafer processing apparatus further includes an air extraction device disposed on another sidewall of the processing space relative to the second gas source.

[0010] Further, the air extraction device is indirectly connected to the processing space through a low-pressure chamber, and the pressure of the low-pressure chamber is less than the pressure of the processing space.

[0011] Further, there is a valve between the processing space and the low-pressure chamber.

[0012] Further, the wafer processing apparatus further includes a first heating device thermally coupled to the first gas source and a second heating device thermally coupled to the second gas source.

[0013] Further, the wafer processing apparatus further includes a power supply electrically coupled to the heating support.

[0014] Further, the aspect ratio of the wafer is greater than 10:1.

[0015] To solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a wafer processing method, which includes: Step S10: Inject a first precursor in a first direction and turn on the power supply electrically coupled to the heating support; Step S20: Inject a first inert gas in the first direction and turn off the power supply; Step S30: Inject a second precursor in a second direction perpendicular to the first direction and turn on the power supply; Step S40: Inject a second inert gas in the second direction and turn off the power supply; and Step S50: Repeat Steps S10 to S40, and clean the remote plasma system and perform air extraction.

[0016] Further, the wafer processing method further includes heating the first precursor and the second precursor before injecting the first precursor and the second precursor.

[0017] Further, the air extraction is performed in the first direction or the second direction.

[0018] One of the beneficial effects of the present invention is that the wafer processing apparatus and the wafer processing method provided by the present invention can improve the coating uniformity and the pore penetration ability in a structure with a high aspect ratio through the technical solutions of "the first gas source is connected to the top of the processing space through a first pipe to provide a first gas in a first direction; the second gas source is connected to the side wall of the processing space through a second pipe to provide a second gas in a second direction perpendicular to the first direction" and "the remote plasma system is disposed between the gas dispersion head and the first gas source".

[0019] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the provided drawings are only for reference and illustration, and are not used to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 Schematic diagram of the wafer processing apparatus according to the first embodiment of the present invention.

[0021] Figure 2 Schematic diagram of the wafer processing apparatus according to the second embodiment of the present invention.

[0022] Figure 3 Schematic diagram of the wafer processing apparatus according to the third embodiment of the present invention.

[0023] Figure 4 Schematic diagram of the wafer processing apparatus according to the fourth embodiment of the present invention.

[0024] Figure 5 Schematic diagram of the wafer processing apparatus according to the fifth embodiment of the present invention.

[0025] Figure 6 Schematic diagram of the wafer processing apparatus according to the sixth embodiment of the present invention.

[0026] Figure 7 Schematic diagram of the wafer processing apparatus according to the seventh embodiment of the present invention.

[0027] Figure 8 Schematic diagram of the wafer processing apparatus according to the eighth embodiment of the present invention.

[0028] Figure 9 Flow chart of the steps of the wafer processing method of the present invention.

[0029] Figure 10 Timing diagram of the wafer processing method of the present invention.

[0030] Reference numerals: 1: housing; 10: processing space; 2: heating support; 3: gas dispersion head; 4: first gas source; 40: first pipe; 40a: first section; 40b: second section; 5: second gas source; 50: second supply pipe; 6: remote plasma system; 7: power supply; 8: air extraction pump; 80: low-pressure chamber; 81: control valve; 9A: first heating unit; 9B: second heating unit; intake passage C1; air extraction passage C2; D1: first direction; D2: second direction; E1 to E8: wafer processing apparatus; S10 to S50: steps; S1 to S5: operation waveforms; W: wafer. Detailed implementation manners

[0031] The following are specific embodiments to illustrate the implementation manners of the present invention regarding "wafer processing apparatus and wafer processing method". Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. Additionally, it should be stated in advance that the drawings of the present invention are only for simple schematic illustration and are not drawn according to actual dimensions. The following implementation manners will further detail the related technical content of the present invention, but the disclosed content is not used to limit the protection scope of the present invention.

[0032] It should be understood that although terms such as "first", "second", "third", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are mainly used to distinguish one element from another. Additionally, the term "or" used herein should, depending on the actual situation, possibly include any one or a combination of more of the associated listed items.

[0033] First embodiment

[0034] The first embodiment of the present invention provides a wafer processing apparatus E1, as Figure 1 shown, the wafer processing apparatus E1 includes a housing 1, a heating support 2, a gas dispersion head 3, a first gas source 4, a second gas source 5, and a remote plasma system 6. The interior of the housing 1 is a processing space 10 for processing wafers. A heating support 2 is provided at the bottom of the housing 1 to heat and support the wafer W. Relative to the heating support 2, the gas dispersion head 3 is provided at the top of the housing 1. In other words, the gas dispersion head 3 is provided above the heating support 2 to supply processing gas to the wafer W placed on the heating support 2.

[0035] Furthermore, the gas dispersion head 3 is connected to the first pipe 40 to communicate with the first gas source 4. The first gas source 4 can be arranged to provide a first precursor or a first inert gas. In other words, the first gas source 4 supplies the first precursor or the first inert gas to the gas dispersion head 3 through the first pipe 40, and the first precursor or the first inert gas is evenly injected into the processing space 10 along the first direction D1 through the gas dispersion head 3 and vertically flows towards the wafer W. Therefore, the film growth rate in the vertical direction can be increased.

[0036] The wafer processing apparatus E1 of the present invention is particularly suitable for processing wafers with a high aspect ratio (AR). For example, the aspect ratio of the wafer W can be greater than 10:1, that is, the wafer W can have trenches or blind holes. However, the above examples are only one possible embodiment and are not used to limit the present invention.

[0037] In addition, a second supply pipe 50 can be connected to the side wall of the housing 1 to communicate the processing space 10 with the second gas source 5. The second gas source 5 can supply a second precursor or a second inert gas to the processing space 10. Specifically, the second gas source 5 can supply the second precursor or the second inert gas to the processing space 10 in the second direction D2. The first direction D1 can be the vertical direction, and the second direction D2 can be the horizontal direction. That is to say, the first direction D1 and the second direction D2 are perpendicular to each other.

[0038] Therefore, when the first gas source 4 supplies the first precursor or the first inert gas in the first direction and the second gas source 5 supplies the second precursor or the second inert gas in the second direction D2, a double-knife flow perpendicular to each other will be formed in the processing space 10, which helps to improve the uniformity of the film formed in the high aspect ratio structure.

[0039] Specifically, during the process of injecting the first precursor into the processing space 10, a single atomic layer of chemisorption will occur on the surface of the wafer W or the inner wall surface of the high aspect ratio structure of the wafer W, so that functional groups will be generated on the surface of the wafer W and the inner wall surface of the high aspect ratio structure. Subsequently, during the process of injecting the second precursor into the processing space 10, the second precursor will react with the functional groups of the first precursor located on the surface of the wafer W and the inner wall surface of the high aspect ratio structure to form a single atomic layer.

[0040] It is worth mentioning that the wafer processing apparatus E1 of the present invention includes a remote plasma system 6 (remote plasma system, RPS). The first precursor can flow into the remote plasma system 6 through the first section 40a of the first pipe 40 and be excited first, and then flow into the gas dispersion head 3 through the second section 40b of the first pipe 40. In other words, the first section 40a can connect the first gas source 4 to the remote plasma system 6, and the second section 40b can connect the remote plasma system 6 to the processing space 10. In an embodiment, the first section 40a can be a pipe with an S shape, and the second section 40b can be a pipe with a right angle.

[0041] Since the first precursor is excited first in the remote plasma system 6, the gas in the processing space 10 can be prevented from being dissociated by direct plasma, thereby damaging the inner surface of the housing 1 and the heating support 2, and further affecting the film formation quality and the overall cleanliness in the processing space 10 in subsequent processes.

[0042] On the other hand, the wafer processing apparatus E1 of the present invention may further include a power supply 7 for controlling the affinity state between the wafer W and the first precursor or the second precursor. In an embodiment of the present invention, the power supply 7 can be a bias power supply. When the bias power supply is turned on, the first precursor or the second precursor is easily attracted by the wafer W and falls into the high aspect ratio structure of the wafer W.

[0043] After the first precursor or the second precursor falls into the high aspect ratio structure, the first inert gas supplied by the first gas source 4 or the second inert gas supplied by the second gas source 5 can be injected into the processing space 10, and the power supply 7 can be turned off to remove the first precursor or the second precursor clogged on the high aspect ratio structure. In this way, controlling the on / off of the power supply 7 helps to improve the coating efficiency and uniformity.

[0044] In an embodiment of the present invention, the first inert gas can be injected into the processing space 10 from the first direction D1 to help the first precursor or the second precursor fall into the high aspect ratio structure and remove the excess first precursor or the second precursor. The second inert gas can be injected into the processing space 10 from the second direction D2 to remove the first precursor or the second precursor clogged on the high aspect ratio structure. For example, the first inert gas or the second inert gas can independently be Ar, He, Xe, and the like. However, the present invention is not limited to the examples given above.

[0045] Further, the wafer processing apparatus E1 of the present invention may further include a suction pump 8. The suction pump 8 may be disposed on another sidewall of the housing 1 relative to the second gas source 5. After the deposition process is completed, when the suction pump 8 is turned on for pumping, the gas in the processing space 10 can be discharged from the second direction D2 out of the processing space 10. The gas in the processing space 10 may be the first precursor, the second precursor and its by-products, the first inert gas, and the second inert gas.

[0046] Second Embodiment

[0047] The second embodiment of the present invention provides a wafer processing apparatus E2, which has substantially the same structure as the wafer processing apparatus E1 in the first embodiment. Therefore, for Figure 1 For Figure 2 the structures with the same reference numerals in Figure 2 are represented as having the same structure, the same material, or the same function, and the description will be appropriately omitted or not repeated here. As

[0048] Third Embodiment

[0049] The third embodiment of the present invention provides a wafer processing apparatus E3, which has substantially the same structure as the wafer processing apparatus E1 in the first embodiment. Therefore, for Figure 1 For Figure 3 the structures with the same reference numerals in Figure 3 are represented as having the same structure, the same material, or the same function, and the description will be appropriately omitted or not repeated here. As

[0050] shown, the suction pump 8 of the wafer processing apparatus E3 further includes a low-pressure chamber 80 and a control valve 81.

[0051] In addition, a control valve 81 may be provided between the processing space 10 and the low-pressure chamber 80 to control the timing of gas flowing from the processing space 10 to the low-pressure chamber 80. For example, during the deposition process, the control valve 81 may be closed to keep the air pressure in the processing space 10 constant. After the deposition process is completed, the control valve 81 may be opened to evacuate the excess gas from the processing space 10. The aforementioned excess gas may be the first precursor, the second precursor and its by-products, the first inert gas, and the second inert gas.

[0052] Fourth Embodiment

[0053] The fourth embodiment of the present invention provides a wafer processing apparatus E4, which has substantially the same structure as the wafer processing apparatus E1 in the first embodiment. Therefore, for Figure 1 For Figure 4 the structures with the same reference numerals in Figure 4 are represented as having the same structure, the same material, or the same function, and the description will be appropriately omitted or not repeated here. As

[0054] shown, the wafer processing apparatus E4 may further include a first heating unit 9A and a second heating unit 9B. The first heating unit 9A is thermally coupled to the remote plasma system 6 to provide the energy required for the reaction of the first precursor in the remote plasma system 6. The second heating unit 9B is thermally coupled to the second gas source 5 to provide the energy required for the reaction of the second precursor in the second gas source 5.

[0055] In this embodiment, the air extraction pump 8 of the wafer processing apparatus E4 further includes a low-pressure chamber 80 and a control valve 81. The low-pressure chamber 80 may be provided between the air extraction pump 8 and the processing space 10 and maintain a pressure lower than that of the processing space 10, so as to generate a pressure difference between the processing space 10 and the low-pressure chamber 80, making the gas tend to flow from the processing space 10 to the low-pressure chamber 80.

[0056] Fifth Embodiment

[0057] The fifth embodiment of the present invention provides a wafer processing apparatus E5, which has substantially the same structure as the wafer processing apparatus E1 in the first embodiment. Therefore, for Figure 1 For Figure 5 the structures with the same reference numerals in Figure 5As shown, the evacuation pump 8 of the wafer processing apparatus E5 is disposed at the top of the processing space 10 and includes a plurality of evacuation channels. In other words, the evacuation pump 8 communicates with the gas dispersion head 3, such that the gas dispersion head 3 has a plurality of intake channels C1 and a plurality of evacuation channels C2 arranged alternately.

[0058] When performing a deposition process, the first gas source 4 is turned on to supply a first precursor or a first inert gas to the gas dispersion head 3, and the first precursor or the first inert gas is introduced into the processing space 10 from the first direction D1 through the plurality of intake channels C1. When the deposition process is completed, the first gas source 4 is turned off and the evacuation pump 8 is turned on to evacuate the excess gas from the processing space 10 through the plurality of evacuation channels C2 from the first direction D1.

[0059] Sixth Embodiment

[0060] The sixth embodiment of the present invention provides a wafer processing apparatus E6, which has a substantially same structure as the wafer processing apparatus E5 in the fifth embodiment. Therefore, for Figure 5 the Figure 6 structures with the same reference numerals as those in Figure 6 are represented as having the same structure, the same material, or the same function, and the description thereof will be appropriately omitted or not repeated herein. As

[0061] Seventh Embodiment

[0062] The seventh embodiment of the present invention provides a wafer processing apparatus E7, which has a substantially same structure as the wafer processing apparatus E5 in the fifth embodiment. Therefore, for Figure 5 the Figure 7 structures with the same reference numerals as those in Figure 7 are represented as having the same structure, the same material, or the same function, and the description thereof will be appropriately omitted or not repeated herein. As

[0063] The evacuation pump 8 of the wafer processing apparatus E7 further includes a low-pressure chamber 80 and a control valve 81.

[0064] In addition, a control valve 81 may be provided between the processing space 10 and the low-pressure chamber 80 to control the timing of gas flowing from the processing space 10 to the low-pressure chamber 80. For example, during the deposition process, the control valve 81 may be closed to keep the air pressure in the processing space 10 constant. After the deposition process is completed, the control valve 81 may be opened to evacuate the excess gas from the processing space 10. The aforementioned excess gas may be the first precursor, the second precursor and its by-products, the first inert gas, and the second inert gas.

[0065] The Eighth Embodiment

[0066] The eighth embodiment of the present invention provides a wafer processing apparatus E8, which has a substantially same structure as the wafer processing apparatus E7 in the seventh embodiment. Therefore, for Figure 7 the Figure 8 structures with the same reference numerals in Figure 8 are represented as having the same structure, the same material, or the same function, and the description thereof will be appropriately omitted or not repeated herein. As

[0067] The Ninth Embodiment

[0068] The present invention may also provide a wafer processing method. Specifically, the present invention provides a wafer deposition method that can be implemented by any one of the aforementioned wafer processing apparatuses E1 to E8. As Figure 9 shown, the wafer processing method includes steps S10 to S50. Step S10 is to inject the first precursor in the first direction D1 and turn on the power supply 7 electrically coupled to the heating support to make the first precursor easily fall into the high aspect ratio structure of the wafer W, thereby improving the coating efficiency and uniformity.

[0069] Step S20 is to inject the first inert gas in the first direction D1 and turn off the power supply 7 to remove the first precursor blocked on the high aspect ratio structure. Step S30 is to inject the second precursor in the second direction D2 and turn on the power supply 7 to increase the probability of the second precursor falling into the high aspect ratio structure of the wafer W. Step S40 is to inject the second inert gas in the second direction D2 and turn off the power supply 7 to separate the second precursor blocked on the high aspect ratio structure from the wafer W. Step S50 is to repeat steps S10 to S40 a predetermined number of times, and finally clean the remote plasma system 6 and perform pumping.

[0070] Furthermore, in Figure 10Among them, S1 represents the action waveform of step S10, S2 represents the action waveform of step S20, S3 represents the action waveform of step S30, S4 represents the action waveform of step S40, and S5 represents the action waveform of step S50. In this embodiment, the predetermined number of times can be 2 times, and then the air pump 8 is turned on for air extraction.

[0071] Advantageous effects of the embodiment

[0072] One of the advantageous effects of the present invention is that the wafer processing apparatus and the wafer processing method provided by the present invention can improve the coating uniformity and the pore penetration ability in a structure with a high aspect ratio through the technical solutions of "the first gas source is connected to the top of the processing space through the first pipe to provide the first gas in the first direction; the second gas source is connected to the side wall of the processing space through the second pipe to provide the second gas in the second direction perpendicular to the first direction" and "the remote plasma system is arranged between the gas dispersion head and the first gas source".

[0073] Furthermore, the wafer processing apparatus and the wafer processing method of the present invention can supply the first precursor and the second precursor in the first direction and the second direction perpendicular to each other, so that the gas forms a double knife flow in the processing space, thereby increasing the growth rate of the film in the vertical direction and at the same time increasing the pore penetration ability for a structure with a high aspect ratio. In this way, the uniformity of the film formed on a structure with a high aspect ratio can be further improved.

[0074] It is worth mentioning that the wafer processing apparatus of the present invention further includes a remote plasma system, which can pre-excite the first precursor to reduce and / or avoid the interaction between the plasma and other components in the processing space.

[0075] The content disclosed above is only the preferred feasible embodiment of the present invention, and does not limit the protection scope of the claims of the present invention. Therefore, all equivalent technical changes made by using the content of the specification and drawings of the present invention are included in the protection scope of the claims of the present invention.

Claims

1. A wafer processing apparatus, characterized in that, The wafer processing apparatus includes: a housing having a processing space for processing a wafer therein; a heating support for heating and supporting the wafer in the processing space; a gas dispersion head disposed at the top of the housing corresponding to the heating support; a first gas source connected to the top of the processing space through a first pipe to supply a first gas in a first direction; a second gas source connected to a sidewall of the processing space through a second pipe to supply a second gas in a second direction perpendicular to the first direction; and a remote plasma system disposed between the gas dispersion head and the first gas source.

2. The wafer processing apparatus according to claim 1, wherein The first pipe includes a first section connecting the first gas source and the remote plasma system and a second section connecting the remote plasma system and the processing space.

3. The wafer processing apparatus according to claim 2, wherein The first section is configured in an S shape, and the second section has a right angle.

4. The wafer processing apparatus according to claim 1, wherein, The wafer processing apparatus further includes an evacuation device disposed at the top of the processing space, the evacuation device including a plurality of evacuation channels, the plurality of evacuation channels being alternately arranged with a plurality of intake channels above the heating support.

5. The wafer processing apparatus according to claim 1, wherein The wafer processing apparatus further includes an evacuation device disposed on another sidewall of the processing space relative to the second gas source.

6. The wafer processing apparatus according to claim 5, wherein, The evacuation device is indirectly connected to the processing space through a low-pressure chamber, and the pressure of the low-pressure chamber is less than the pressure of the processing space.

7. The wafer processing apparatus according to claim 6, wherein, There is a valve between the processing space and the low-pressure chamber.

8. The wafer processing apparatus according to claim 1, wherein, The wafer processing apparatus further includes a first heating device thermally coupled to the first gas source and a second heating device thermally coupled to the second gas source.

9. The wafer processing apparatus according to claim 1, wherein The wafer processing apparatus further includes a power supply electrically coupled to the heating support.

10. The wafer processing apparatus according to claim 1, wherein The aspect ratio of the wafer is greater than 10:

1.

11. A wafer processing method, characterized in that, The wafer processing method includes: Step S10: Inject a first precursor in the first direction and turn on the power supply electrically coupled to the heating support; Step S20: Inject a first inert gas in the first direction and turn off the power supply; Step S30: Inject a second precursor in the second direction and turn on the power supply, the second direction being perpendicular to the first direction; Step S40: Inject a second inert gas in the second direction and turn off the power supply; and Step S50: Repeat steps S10 to S40, and clean the remote plasma system and perform evacuation.

12. The wafer processing method according to claim 11, wherein, The wafer processing method further includes heating the first precursor and the second precursor before injecting the first precursor and the second precursor.

13. The wafer processing method according to claim 11, characterized in that, The evacuation is performed in the first direction or the second direction.

Images