A vapor deposition chamber

Abstract

The present application provides a vapor deposition chamber, including a growth chamber, a supporting seat, a shaft body, a supporting plate, an inclined support mechanism and a source gas injection device, wherein the shaft body is fixedly arranged in the middle of the supporting seat, the top of the shaft body protrudes from the top surface of the supporting seat, and the first groove arranged on the top surface of the supporting seat is close to the side wall opening of one side of the shaft body; the supporting plate is accommodated in the first groove, and the supporting plate includes a movable end and a free end, and the movable end is movably adapted to the top of the shaft body through the side wall opening of one side of the first groove; the inclined support mechanism is arranged on the supporting seat, including a medium supply pipeline and a movable support part arranged below the free end, and the lifting or lowering of the movable support part drives the free end to lift or lower relative to the movable end. When the source gas injection device provides the source gas to the substrate to be coated, and the flow direction is directed from the movable end to the free end, the inclined support structure lifts the free end, which can adjust the depletion trend of the source gas during deposition on the substrate to be coated, thereby improving the uniformity of the film thickness of the substrate to be coated.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a vapor deposition chamber. Background Art

[0002] In the field of semiconductor material growth and thin film preparation technology, horizontal flow equipment, with its unique gas flow characteristics and structural design, has become one of the key equipment for achieving high-quality thin film deposition and material growth. Its core design is to ensure that the growth surface of the substrate remains basically parallel to the flow direction of the source gas, and by precisely controlling the gas flow pattern, the purpose of optimizing material growth or thin film deposition uniformity is achieved.

[0003] However, despite the numerous theoretical advantages of horizontal flow systems, they face a number of challenges in practical application. Specifically, when the source gas is introduced into the device, its flow direction is approximately parallel to the substrate growth surface, resulting in a tendency for the source gas to deplete as it flows. This can lead to significant non-uniformity in film thickness, which can adversely affect the performance and reliability of the final product. Summary of the Invention

[0004] In view of the defects and shortcomings in the existing technology, the present application provides a vapor deposition chamber that can adjust the inclination angle of the substrate to be coated in real time according to the deposition conditions during the process and ensure the stability of the adjustment process, which is conducive to optimizing the depletion trend of the source gas during deposition on the substrate to be coated and improving the uniformity of the film thickness of the substrate to be coated.

[0005] The present application provides a vapor deposition chamber, comprising:

[0006] growth chambers;

[0007] A supporting seat is provided in the growth chamber, and a first groove is provided on the top surface thereof, and a side wall of one side of the first groove is open;

[0008] A shaft body is fixedly arranged in the middle of the bearing seat, the top of the shaft body protrudes from the top surface of the bearing seat, and the opening of one side wall of the first groove is close to the top of the shaft body;

[0009] A carrier plate is disposed in the first groove, and a second groove is provided on the top surface of the carrier plate to accommodate the substrate to be coated; the carrier plate includes a movable end and a free end, and the movable end is movably adapted to the top of the shaft body through an opening on one side wall of the first groove;

[0010] a tilt support mechanism disposed on the carrier seat, comprising a medium supply pipeline for providing a medium for driving the carrier plate and a movable support portion connected to the medium supply pipeline, wherein the movable support portion is located below the free end portion and is configured to be lifted or lowered under the action of the carrier plate driving medium, thereby driving the free end portion to be lifted or lowered relative to the movable end portion;

[0011] A source gas injection device is arranged opposite to the middle of the supporting seat, and is used to inject source gas into the growth chamber so that the source gas flows through the substrate to be coated along the direction from the movable end to the free end.

[0012] As an embodiment, the movable support portion includes a support body with an open top and a hollow interior, and a lifting body that is movably arranged in the support body from the top of the support body. The lifting body is located below the free end, and one end of the medium supply pipeline is connected to the support body. The carrier plate drives the medium into the support body and acts on the bottom of the lifting body, so that the top of the lifting body protrudes from the top of the support body, or is accommodated in the support body, thereby driving the free end to rise or fall relative to the movable end.

[0013] As an embodiment, the supporting body and the medium supply pipeline are arranged in the bearing seat, and the bottom surface of the first groove is provided with an outlet structure adapted to allow the lifting body to movably penetrate.

[0014] As an embodiment, the supporting body includes a cylinder, and the lifting body includes a piston movably disposed in the cylinder.

[0015] As an embodiment, the movable support portion, the bearing seat and the bearing plate have the same constituent material, and the constituent material includes graphite.

[0016] As an embodiment, the medium supply pipeline is arranged in the supporting seat, located below the supporting plate, and extends into the shaft body and extends outside the growth chamber through the shaft body. The movable support part and the medium supply pipeline are opposite to each other along the radial direction of the supporting seat.

[0017] As an embodiment, the number of the first grooves and the number of the tilt support mechanisms are at least 2, and they are arranged in a one-to-one correspondence.

[0018] As an embodiment, the number of the first grooves is at least 2 and they are evenly arranged around the shaft.

[0019] As an embodiment, the first groove and the corresponding carrier plate accommodated therein are both in a fan-shaped shape.

[0020] As an embodiment, the top surface of the supporting seat includes the top surface of the supporting seat except the first groove, the top surface of the supporting plate includes the top surface of the supporting plate except the second groove, and the top surface of the supporting seat is flush with the top surface of the supporting plate.

[0021] As an embodiment, the movable end portion includes an end side wall facing the top side wall of the shaft body;

[0022] The end side wall is in sliding contact with at least a portion of the side wall of the top of the shaft body; or,

[0023] There is a distance between the end side wall and the top side wall of the shaft body. When the free end is lifted relative to the movable end, the supporting plate moves toward the shaft body through the side wall opening of the first groove, and makes the end side wall slide and fit with at least part of the side wall of the top of the shaft body.

[0024] As an embodiment, the spacing does not exceed 0.2 mm.

[0025] As an embodiment, the bottom surface of the area between the top of the shaft and the corresponding first groove is flush with the bottom surface of the first groove, and the height difference between the top surface of the shaft and the top surface of the supporting plate accommodated in the corresponding first groove is greater than or equal to 0 and less than 2 cm.

[0026] As an embodiment, the shape of the top side wall of the shaft body and the shape of the end side wall are in a concave-convex fitting relationship.

[0027] As an embodiment, the shaft body is provided with a self-rotation driving air duct, which extends into the supporting plate through the top side wall of the shaft body, and the outlet of the self-rotation driving air duct is provided at the bottom of the second groove to provide self-rotation driving gas to make the substrate to be coated rotate relative to the supporting plate.

[0028] In one embodiment, the end sidewall is in sliding contact with at least a portion of the sidewall of the top of the shaft body, and the outlet of the rotation drive air passage located on the sidewall of the top of the shaft body is connected to the inlet located on the end sidewall;

[0029] During the process of the free end portion being lifted relative to the movable end portion, the outlet of the rotation driving air passage located on the top side wall of the shaft body is communicated with the inlet located on the side wall of the end portion.

[0030] As an embodiment, there is a distance between the end side wall and the top side wall of the shaft body, and the outlet of the rotation driving air channel located on the top side wall of the shaft body is opposite to the inlet located on the end side wall;

[0031] During the process of the free end portion being lifted relative to the movable end portion, the outlet of the rotation driving air passage located on the top side wall of the shaft body is communicated with the inlet located on the side wall of the end portion.

[0032] As described above, the vapor deposition chamber of the present application has the following beneficial effects:

[0033] The vapor deposition chamber of the present application fixes the shaft body in the middle of the supporting seat, the top of the shaft body protrudes from the top surface of the supporting seat, and the first groove set on the top surface of the supporting seat is close to the side wall opening of the top of the shaft body; the supporting plate for accommodating the substrate to be coated is accommodated in the first groove, and the supporting plate includes a movable end and a free end, and the movable end is movably adapted to the top of the shaft body through the side wall opening of the first groove; the movable support part of the tilting support mechanism is located below the free end, and the movable support part is connected to the medium supply pipeline. When the medium supply pipeline provides the supporting plate driving medium, the movable support part drives the free end to rise or fall relative to the movable end, thereby optimizing the depletion trend of the source gas during deposition on the substrate to be coated, improving the uniformity of the film thickness of the substrate to be coated, realizing real-time adjustment of the tilt angle of the substrate to be coated and ensuring the stability of the adjustment process. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It shows a schematic structural diagram of a vapor deposition chamber in the prior art.

[0035] Figure 2 Shown is a partial top view structural schematic diagram of a vapor deposition chamber according to a first embodiment of the present invention.

[0036] Figure 3 Display as Figure 2 Schematic diagram of the cross-sectional structure of the working state along the AA' direction.

[0037] Figure 4 Display as Figure 3 Schematic diagram of the structure of the middle tilt support mechanism.

[0038] Figure 5 Display as Figure 2 A schematic structural diagram of one of the first grooves.

[0039] Figure 6 A partial detail diagram of a vapor deposition chamber according to a first embodiment of the present invention is shown.

[0040] Figure 7 Shown is a partial top view structural schematic diagram of another vapor deposition chamber according to the first embodiment of the present invention.

[0041] Figure 8 Display as Figure 7 Schematic diagram of the cross-sectional structure of the working state along the BB' direction.

[0042] Figure 9 It is a cross-sectional structural schematic diagram showing the working state of the vapor deposition chamber according to the second embodiment of the present invention.

[0043] Component number description

[0044] 10. Growth chamber; 20. Source gas injection device; 30. Base; 40. Substrate; 50. Heating device; 100. Support seat; 101. Piston outlet; 110. First groove; 120. Tilt support mechanism; 121. Medium supply pipeline; 122. Movable support part; 123. Outlet structure; 200. Shaft; 210. Top of shaft; 211. Side wall of top of shaft; 300. Support plate; 301. Movable end; 302. Free end; 310. Rotation-driven air channel; 311. Rotation-driven main air channel; 312. Rotation-driven branch air channel; 400. Second groove; 500. Substrate to be coated; 600. Countersunk hole; 1221. Support body; 1222. Lifting body; 3011. Side wall of end. DETAILED DESCRIPTION

[0045] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different perspectives and applications without departing from the spirit of the present invention.

[0046] See also Figures 1 to 9 It should be noted that the diagrams provided in this embodiment are merely schematic illustrations of the basic concept of the present invention. Therefore, the diagrams only show components related to the present invention and are not drawn according to the number, shape, and size of components in actual implementation. In actual implementation, the type, quantity, and proportion of each component may be changed arbitrarily, and the component layout may also be more complex.

[0047] Figure 1 The figure shows a conventional vapor deposition chamber, comprising a growth chamber 10, a source gas injection device 20, a susceptor 30, and a heating device 50. Specifically, the source gas injection device 20 is disposed at the top of the growth chamber 10 and extends toward the center of the susceptor 30 disposed within the growth chamber 10. Substrates 40 are arranged around the center of the susceptor 30. The source gas provided by the source gas injection device 20 flows through the substrate 40 in a laminar flow after being ejected, thereby enabling film growth on the substrate 40. The heating device 50 is disposed below the susceptor 30 and is used to heat the substrate 40 placed on the susceptor 30 to meet the temperature conditions required during the growth process.

[0048] Although conventional vapor deposition chambers are designed to ensure uniform distribution of source gas, they still face some challenges in practical applications. Because the growth surface of substrate 40 is approximately parallel to the source gas flow direction, the source gas is close to the surface of substrate 40. As a result, after the source gas injection device 20 supplies source gas, the source gas reacts as it flows along the source gas flow direction, leading to a tendency for depletion.

[0049] This source gas depletion trend has a serious impact on the uniformity and quality of film formation. Specifically, on the upstream side, due to the high source gas concentration, the deposition rate is fast, which may lead to excessive film thickness; while on the downstream side, due to the depletion of source gas, the deposition rate is slow, which may lead to uneven film thickness and reduce the overall film quality.

[0050] In order to solve the above-mentioned problems, the present application provides a vapor deposition chamber, which will be described in detail through the following embodiments.

[0051] Example 1

[0052] This embodiment provides a vapor deposition chamber, such as Figures 1 to 8 As shown, the vapor deposition chamber includes a support base 100, a shaft 200, a support plate 300, a tilt support mechanism 120 and a source gas injection device 20. The source gas injection device 20 is arranged opposite to the middle of the support base 100 and is used to inject source gas into the growth chamber so that the source gas flows through the top surface of the substrate to be coated 500. The growth chamber 10, the source gas injection device 20 and the heating device 50 in the vapor deposition chamber of this embodiment can be referred to Figure 1 .

[0053] like Figures 2 to 6 As shown, the support base 100 is arranged in the growth chamber, and the top surface of the support base 100 is provided with a first groove 110 for accommodating the support plate 300, and one side wall of the first groove 110 is open. The shaft body 200 is fixedly arranged in the middle of the support base 100, and the top 210 of the shaft body protrudes from the top surface of the support base 100, and one side wall of the first groove 110 is open near the top 210 of the shaft body. In some embodiments, the shaft body 200 passes through the growth chamber with a dynamic seal and is fixedly arranged in the middle of the support base 100. Specifically, the portion of the shaft body 200 extending outside the growth chamber is provided with a rotary seal assembly to drive the shaft body 200 to rotate and ensure the airtightness between the shaft body 200 and the growth chamber. The specific implementation method is conventional technical means in this field. In some specific embodiments, the rotary seal assembly is a magnetic fluid rotary seal assembly.

[0054] In some embodiments, the first groove 110 is a groove formed on the support base 100; the top of the first groove 110 is open. Specifically, the top surface of the support base 100 is provided with a plurality of radial sidewalls extending radially along the top surface of the support base 100 and radially distributed around the shaft body 200. The adjacent radial sidewalls and the edge of the support base 100 form the first groove 110. The sidewall of the first groove 110 near the top 210 of the shaft body is open.

[0055] like Figure 5 As shown, the carrier plate 300 is accommodated in the first groove 110. The top surface of the carrier plate 300 is provided with a second groove 400 for accommodating the substrate 500 to be coated, and the top of the second groove 400 is open. The carrier plate 300 includes a movable end 301 and a free end 302. The movable end 301 is an end close to the shaft body 200, and the free end 302 is an end opposite to the movable end 301 along the radial direction of the first groove 110 (i.e., the direction in which the shaft body 200 points to the edge of the carrier seat 100). The movable end 301 is movably adapted to the top 210 of the shaft body through an opening on one side wall of the first groove 110. When the carrier plate 300 is accommodated in the first groove 110, it can move relative to the first groove 110 and has a certain degree of freedom of movement. In some specific embodiments, the bottom surface of the carrier plate 300 contacts the bottom surface of the first groove 110, and each side surface of the carrier plate 300 has a certain gap relative to the first groove 110. The setting of the gap is necessary so as not to affect the movement of the free end 302 relative to the carrier seat 100 through the tilting support mechanism 120, and when the shaft 200 is set as a rotatable shaft, the rotation of the carrier seat 100 can enable the carrier plate 300 in the first groove 110 to rotate synchronously and remain stable.

[0056] In some embodiments, the rotation speed of the shaft 200 is controlled to be no more than 100 rpm. Too high a rotation speed may easily cause the carrier plate 300 and / or the substrate to be coated 500 carried by the carrier plate 300 to be significantly displaced relative to the carrier base 100 or even thrown off.

[0057] The tilt support mechanism 120 is mounted on the carrier base 100 and includes a medium supply line 121 for providing a carrier plate drive medium, and a movable support portion 122 connected to the medium supply line 121. The movable support portion 122 is located below the free end portion 302. The medium supply line 121 is used to supply the carrier plate drive medium to the movable support portion 122, thereby elevating the movable support portion 122. The movable support portion 122 thereby elevates the free end portion 302 relative to the movable end portion 301, forming a first angle α between the bottom surface of the carrier plate 300 and the bottom of the first recess 110. Reducing the flow rate of the carrier plate drive medium or ceasing the supply of the carrier plate drive medium can lower the movable support portion 122, thereby lowering the free end portion 302.

[0058] When the flow direction of the source gas provided to the substrate to be coated 500 by the source gas injection device is directed from the movable end 301 to the free end 302, the free end 302 can be lifted relative to the movable end 301 by lifting the movable support part 122, thereby adjusting the depletion trend of the source gas during deposition on the substrate to be coated 500, improving the uniformity of the film thickness of the substrate to be coated 500, realizing real-time adjustment of the inclination angle of the substrate to be coated and ensuring the stability of the adjustment process.

[0059] In this embodiment, Figure 4 As shown, the movable support part 122 includes a support body 1221 with an open top and a hollow interior, and a lifting body 1222 movably arranged in the support body 1221 from the top of the support body 1221. The lifting body 1222 is located below the free end 302. One end of the medium supply pipeline 121 is connected to the support body 1221. The carrier plate drives the medium into the support body 1221 and acts on the bottom of the lifting body 1222, so that the top of the lifting body 1222 protrudes from the top of the support body 1221, or is accommodated in the support body 1221, thereby driving the free end 302 to rise or fall relative to the movable end 301.

[0060] In some embodiments, the supporting body 1221 and the medium supply pipeline 121 are disposed in the supporting base 100 , and the bottom surface of the first groove 110 is provided with an outlet structure 123 adapted to allow the lifting body 1222 to movably penetrate therethrough.

[0061] In some embodiments, the supporting body 1221 includes a cylinder, and the lifting body includes a piston movably disposed in the cylinder.

[0062] In some embodiments, the medium supply pipeline 121 is disposed in the supporting base 100 and is located below the supporting plate 300 . The movable support portion 122 is opposite to the medium supply pipeline 121 along the radial direction of the supporting base 100 .

[0063] In some embodiments, the medium supply line 121 further extends into the shaft body 200 and extends outside the growth chamber through the shaft body 200 .

[0064] In some embodiments, the number of first grooves 110 and the number of tilting support mechanisms 120 are both at least two, and they are provided in a one-to-one correspondence. The number of first grooves 110 and tilting support mechanisms 120 is the same, and one tilting support mechanism 120 is provided for each first groove 110. In this way, the tilting support mechanism 120 can determine whether the free end portion 302 needs to be lifted based on the progress of the real-time deposition process, and the specific first groove 110 containing the free end portion 302 of the carrier plate 300 to be lifted.

[0065] In some embodiments, the number of the first grooves 110 is at least 2 and they are evenly arranged around the shaft 200 .

[0066] In some specific embodiments, the first groove 110 is in a sector ring shape, and the shape of the carrier plate 300 received in the first groove 110 is the same as that of the first groove 110 , which is also in a sector ring shape.

[0067] In some embodiments, the top surface of the susceptor 100 includes the susceptor top surface excluding the first groove 110, and the top surface of the carrier plate 300 includes the carrier plate top surface excluding the second groove 400. The susceptor top surface is flush with the carrier plate top surface. When the number of first grooves 110 and the number of carrier plates 300 accommodated therein are both at least two, the top surface of each carrier plate 300 is flush with the top surfaces of adjacent carrier plates 300, thereby reducing or even preventing adverse turbulence caused by the source gas.

[0068] In some embodiments, the movable end portion 301 includes an end sidewall 3011 facing the sidewall of the shaft top 210. The sidewall of the shaft top 210 is the shaft top sidewall 211. The end sidewall 3011 slides in contact with at least a portion of the shaft top sidewall 211. When the free end portion 302 is lifted relative to the support base 100, the end sidewall 3011 slides along at least a portion of the shaft top sidewall 211, causing the free end portion 302 to be higher than the movable end portion 301.

[0069] In some embodiments, there is a gap between the end side wall 3011 and the top side wall 211 of the shaft body. When the free end 302 is lifted relative to the movable end 301, the supporting plate 300 moves toward the shaft body 200 through the side wall opening of the first groove 110, and makes the end side wall 3011 slide and fit with at least part of the side wall of the top 210 of the shaft body.

[0070] In some embodiments, the spacing is no greater than 0.2 mm.

[0071] In some embodiments, the bottom surface of the area between the top 210 of the shaft body and the corresponding first groove 110 is flush with the bottom surface of the first groove 110, which can ensure that the carrier plate 300 moves smoothly toward the side wall of the top 210 of the shaft body when the tilt support mechanism 120 lifts the free end 302. The height difference between the top surface of the shaft body 200 and the top surface of the carrier plate 300 accommodated in the corresponding first groove 110 is greater than or equal to 0 and less than 2 cm. The difference between the height of the top surface of the shaft body 200 and the height of the top surface of the first groove 110 after accommodating the carrier plate 300 is controlled to be no more than 2 cm, so that the degree of protrusion of the top surface of the shaft body 200 does not cause the source gas flow to form a turbulent flow that is not conducive to the deposition reaction, thereby ensuring the stability of the deposition reaction.

[0072] In some embodiments, the shape of the shaft top sidewall 211 is concave-convex in conformity with the shape of the end sidewall 3011. In some specific embodiments, the end sidewall 3011 is a concave arc surface, and the shaft top sidewall 211 is a convex arc surface, and the curvature radius of the two is the same.

[0073] In some embodiments, the movable support portion 122, the support base 100, and the support plate 300 are made of the same material. For example, the material may be graphite, and the graphite may be coated with a surface coating such as pyrolytic carbon or silicon carbide depending on the growth material.

[0074] In some specific embodiments, an optical detection device is provided on the source gas injection device outside the growth chamber to detect in real time the reflectivity of different regions of the thin film deposited on the substrate to be coated 500 to calculate the growth rate, thereby evaluating in real time the uniformity of the thin film growth on the substrate to be coated 500. Specific implementation methods are conventional technical means in the art.

[0075] In some embodiments, the carrier plate driving medium may be a gas, and the gas is selected from one or more of nitrogen, argon, and hydrogen.

[0076] In some embodiments, as Figure 2 and Figure 7 As shown, the shape of the support base 100 can be cylindrical, and a plurality of fan-shaped first grooves 110 are provided in the support base 100. Each fan-shaped first groove 110 has the same center, that is, the center of the support base 100; a supporting plate 300 is provided in each first groove 110, and the shape of the supporting plate 300 is adapted to the shape of the first groove 110. The top surface of the supporting plate 300 is provided with at least one cylindrical second groove 400. Figure 7 and Figure 8 As shown, when the top surface of each carrier plate 300 is provided with a plurality of cylindrical second grooves 400, the centers of the plurality of second grooves 400 are located on the same radial direction of the carrier plate 300. Specifically, when two cylindrical second grooves 400 are provided in each carrier plate 300, a substrate 500 to be coated is placed in each second groove 400, and the centers of the two second grooves 400 are located on the same radius of the carrier plate 300; the second grooves 400 located in the inner layer of all carrier plates 300 are defined as inner second grooves, and the second grooves 400 located in the outer layer of all carrier plates 300 are defined as outer second grooves, and the centers of all inner second grooves are located on the same concentric circle of the first groove 110, and the centers of all outer second grooves are located on the same concentric circle of the first groove 110.

[0077] In some embodiments, as Figure 2 、 Figure 3 and Figure 7As shown, a countersunk hole 600 is provided at the center of the supporting seat 100 for arranging the shaft body 200 .

[0078] Example 2

[0079] This embodiment also provides a vapor deposition chamber, such as Figure 9 As shown, this embodiment differs from the first embodiment in that:

[0080] like Figure 9 As shown, the shaft body 200 is provided with a self-rotation driving air channel 310, which extends into the carrier plate 300 through the top side wall 211 of the shaft body. The outlet of the self-rotation driving air channel 310 is provided at the bottom of the second groove 400 to provide self-rotation driving gas to make the substrate 500 to be coated rotate relative to the carrier plate 300.

[0081] In some specific embodiments, the end side wall 3011 slides in contact with at least a portion of the side wall of the shaft top 210, and the outlet of the self-rotation driven air channel 310 located on the shaft top side wall 211 is communicated with the inlet located on the end side wall 3011; during the process of the free end 302 being lifted relative to the movable end 301, the outlet of the self-rotation driven air channel 310 located on the shaft top side wall 211 is communicated with the inlet located on the end side wall 3011.

[0082] In some specific embodiments, there is a gap between the end side wall 3011 and the top side wall 211 of the shaft body, and the outlet of the self-rotation driven air channel 310 located on the top side wall 211 of the shaft body is opposite to the inlet located on the end side wall 3011; in the process of the free end 302 being lifted relative to the movable end 301, the outlet of the self-rotation driven air channel 310 located on the top side wall 211 of the shaft body is connected to the inlet located on the end side wall 3011.

[0083] In some specific embodiments, the rotation-driven air channel 310 includes a rotation-driven main air channel 311 and a rotation-driven branch air channel 312. The rotation-driven main air channel 311 is located on the main air channel of the carrier plate 300 and extends along the radial direction of the carrier plate 300. In some specific embodiments, the rotation-driven main air channel 311 extends parallel to the upper surface or lower surface of the carrier plate 300, that is, the direction of gas flow within the main air channel is parallel to the upper surface or lower surface of the carrier plate 300.

[0084] The opening direction of the self-rotation driven branch air channel 312 is perpendicular to the direction of the self-rotation driven main air channel 311 or there is a certain angle between the two, and it includes at least two self-rotation driven branch air channels 312. The distribution positions of the multiple self-rotation driven branch air channels 312 can be symmetrical about the center of the circle of the substrate to be coated 500, so that the substrate to be coated 500 can achieve a better rotation effect. The inlet of each self-rotation driven branch air channel 312 is connected to the outlet of the self-rotation driven main air channel 311.

[0085] In some embodiments, the gas in the rotation driving gas channel 310 is selected from one or more of nitrogen, argon, and hydrogen.

[0086] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A vapor deposition chamber, characterized in that include: growth chambers; A supporting seat is provided in the growth chamber, and a first groove is provided on the top surface thereof, and a side wall of one side of the first groove is open; A shaft body is fixedly arranged in the middle of the bearing seat, the top of the shaft body protrudes from the top surface of the bearing seat, and the opening of one side wall of the first groove is close to the top of the shaft body; A carrier plate is arranged in the first groove, and a second groove is provided on the top surface of the carrier plate to accommodate the substrate to be coated; The carrier plate includes a movable end and a free end, and the movable end is movably adapted to the top of the shaft body through an opening on one side wall of the first groove; a tilt support mechanism disposed on the carrier seat, comprising a medium supply pipeline for providing a medium for driving the carrier plate and a movable support portion connected to the medium supply pipeline, wherein the movable support portion is located below the free end portion and is configured to be lifted or lowered under the action of the carrier plate driving medium, thereby driving the free end portion to be lifted or lowered relative to the movable end portion; A source gas injection device is arranged opposite to the middle of the supporting seat, and is used to inject source gas into the growth chamber so that the source gas flows through the substrate to be coated along the direction from the movable end to the free end.

2. The vapor deposition chamber according to claim 1, characterized in that The movable support portion includes a support body with an open top and a hollow interior, and a lifting body that is movably arranged in the support body from the top of the support body. The lifting body is located below the free end, and one end of the medium supply pipeline is connected to the support body. The carrier plate drives the medium into the support body and acts on the bottom of the lifting body, so that the top of the lifting body protrudes from the top of the support body, or is accommodated in the support body, thereby driving the free end to rise or fall relative to the movable end.

3. The vapor deposition chamber according to claim 2, characterized in that The supporting body and the medium supply pipeline are arranged in the bearing seat, and the bottom surface of the first groove is provided with an outlet structure adapted to allow the lifting body to movably penetrate.

4. The vapor deposition chamber according to claim 2, characterized in that The supporting body includes a cylinder, and the lifting body includes a piston movably arranged in the cylinder.

5. The vapor deposition chamber according to claim 1, characterized in that The movable support portion, the bearing seat and the bearing plate are made of the same material, which includes graphite.

6. The vapor deposition chamber according to claim 1, characterized in that The medium supply pipeline is arranged in the supporting seat, located below the supporting plate, and extends into the shaft body and extends outside the growth chamber through the shaft body. The movable support part and the medium supply pipeline are opposite to each other along the radial direction of the supporting seat.

7. The vapor deposition chamber according to claim 1, characterized in that The number of the first grooves and the number of the tilt support mechanisms are both at least 2, and are arranged in a one-to-one correspondence.

8. The vapor deposition chamber according to claim 1, characterized in that The number of the first grooves is at least 2 and they are evenly arranged around the shaft.

9. The vapor deposition chamber according to claim 1, characterized in that The first groove and the corresponding carrier plate are both in a sector ring shape.

10. The vapor deposition chamber according to claim 1, wherein: The top surface of the supporting seat includes the top surface of the supporting seat except the first groove, the top surface of the supporting plate includes the top surface of the supporting plate except the second groove, and the top surface of the supporting seat is flush with the top surface of the supporting plate.

11. The vapor deposition chamber according to claim 1, wherein: The movable end portion includes an end side wall facing the top side wall of the shaft body; The end side wall is in sliding contact with at least a portion of the side wall of the top of the shaft body; or, There is a distance between the end side wall and the top side wall of the shaft body. When the free end is lifted relative to the movable end, the supporting plate moves toward the shaft body through the side wall opening of the first groove, and makes the end side wall slide and fit with at least part of the side wall of the top of the shaft body.

12. The vapor deposition chamber according to claim 11, characterized in that The spacing does not exceed 0.2 mm.

13. The vapor deposition chamber according to claim 11, characterized in that The bottom surface of the area between the top of the shaft and the corresponding first groove is flush with the bottom surface of the first groove, and the height difference between the top surface of the shaft and the top surface of the supporting plate accommodated in the corresponding first groove is greater than or equal to 0 and less than 2 cm.

14. The vapor deposition chamber according to claim 11, wherein: The shape of the top side wall of the shaft body and the shape of the end side wall are in a concave-convex fitting relationship.

15. The vapor deposition chamber according to claim 11, characterized in that The shaft body is provided with a self-rotation driving air channel, which extends into the supporting plate through the top side wall of the shaft body. The outlet of the self-rotation driving air channel is provided at the bottom of the second groove to provide self-rotation driving gas to make the substrate to be coated rotate relative to the supporting plate.

16. The vapor deposition chamber according to claim 15, characterized in that The end sidewall is in sliding contact with at least a portion of the sidewall of the top of the shaft body, and the outlet of the rotation drive airway located on the sidewall of the top of the shaft body is connected to the inlet located on the end sidewall; During the process of the free end portion being lifted relative to the movable end portion, the outlet of the rotation driving air passage located on the top side wall of the shaft body is communicated with the inlet located on the side wall of the end portion.

17. The vapor deposition chamber according to claim 15, characterized in that There is a gap between the end side wall and the top side wall of the shaft body, and the outlet of the rotation driving air channel located on the top side wall of the shaft body is opposite to the inlet located on the end side wall; During the process of the free end portion being lifted relative to the movable end portion, the outlet of the rotation driving air passage located on the top side wall of the shaft body is communicated with the inlet located on the side wall of the end portion.

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