Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, and relates to the technical field of display. The photoelectric device comprises an anode, a photoelectric unit and a cathode. The photoelectric unit comprises a hole function layer, a light-emitting layer and an electronic function layer which are sequentially arranged in the direction away from the anode. The material of the electronic function layer comprises a first electronic function material and a first pyroelectric material; and / or the photoelectric device further comprises a first interface layer, the first interface layer is arranged between the light-emitting layer and the electronic functional layer, and the material of the first interface layer comprises a second pyroelectric material; and / or the photoelectric device further comprises a second interface layer, the second interface layer is arranged between the hole function layer and the light emitting layer, and the material of the second interface layer comprises a third pyroelectric material. According to the photoelectric device provided by the invention, thermal aging of the photoelectric device can be weakened, and the service life of the photoelectric device is prolonged.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and in particular, to an optoelectronic device, a preparation method thereof, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Due to their excellent display performances such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display, OLEDs have become the mainstream technology in the field of display technologies. QLEDs have the advantages of saturated emission light color and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields. In recent years, they have become strong competitors of OLEDs.

[0003] The structures of traditional OLED and QLED devices generally include an anode, a hole injection layer, a hole transport layer, a photoactive layer, an electron transport layer, an electron injection layer, and a cathode. Under the action of an electric field, the holes generated by the anode of the light-emitting diode and the electrons generated by the cathode move, and are respectively injected into the hole transport layer and the electron transport layer, and finally migrate to the photoactive layer. When the two meet in the photoactive layer, energy excitons are generated, which excite the luminescent molecules to finally generate visible light.

[0004] During the operation of optoelectronic devices, heat is generated and thermal aging occurs, which affects the service life of optoelectronic devices. Summary of the Invention

[0005] In view of this, the present application provides an optoelectronic device, a preparation method thereof, and a display device.

[0006] An optoelectronic device according to an embodiment of the present application includes an anode, a cathode, and at least one optoelectronic unit disposed between the anode and the cathode. Each optoelectronic unit includes a hole functional layer, a light-emitting layer, and an electron functional layer sequentially disposed in a direction away from the anode;

[0007] The material of at least one electron functional layer includes a first electron functional material and a first pyroelectric material; and / or

[0008] The optoelectronic device further includes a first interface layer disposed between the light-emitting layer and the electron functional layer in at least one optoelectronic unit. The material of the first interface layer includes a second pyroelectric material; and / or

[0009] The optoelectronic device further includes a second interface layer disposed between the hole functional layer and the light-emitting layer in at least one optoelectronic unit. The material of the second interface layer includes a third pyroelectric material.

[0010] Accordingly, an embodiment of the present application further provides a method for manufacturing an optoelectronic device, including:

[0011] Providing a preform of an optoelectronic device, the preform of the optoelectronic device including an anode;

[0012] Providing at least one optoelectronic unit on the preform of the optoelectronic device, each optoelectronic unit including a hole functional layer, a light-emitting layer, and an electron functional layer sequentially arranged in a direction away from the anode; the material of at least one electron functional layer includes a first electron functional material and a first pyroelectric material, and / or, a first interface layer is provided between the light-emitting layer and the electron functional layer in at least one optoelectronic unit, the material of the first interface layer includes a second pyroelectric material, and / or, a second interface layer is provided between the hole functional layer and the light-emitting layer in at least one optoelectronic unit, the material of the second interface layer includes a third pyroelectric material;

[0013] Forming a cathode on the optoelectronic unit away from the anode to obtain an optoelectronic device;

[0014] Or,

[0015] Providing a preform of an optoelectronic device, the preform of the optoelectronic device including a cathode;

[0016] Providing at least one optoelectronic unit on the preform of the optoelectronic device, each optoelectronic unit including an electron functional layer, a light-emitting layer, and a hole functional layer sequentially arranged in a direction away from the cathode; the material of at least one electron functional layer includes a first electron functional material and a first pyroelectric material, and / or, a first interface layer is provided between the electron functional layer and the light-emitting layer in at least one optoelectronic unit, the material of the first interface layer includes a second pyroelectric material, and / or, a second interface layer is provided between the light-emitting layer and the hole functional layer in at least one optoelectronic unit, the material of the second interface layer includes a third pyroelectric material;

[0017] Forming an anode on the optoelectronic unit away from the cathode to obtain an optoelectronic device.

[0018] Accordingly, an embodiment of the present application further provides a display device, the display device including the above optoelectronic device, or the optoelectronic device manufactured by the above manufacturing method.

[0019] The optoelectronic device provided by the present application can weaken the thermal aging of the optoelectronic device, increase the carrier concentration, and extend the service life of the optoelectronic device. Description of the Drawings

[0020] To more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0021] Figure 1 It is a schematic structural diagram of a single-layer optoelectronic device provided by an embodiment of the present application;

[0022] Figure 2 It is a schematic structural diagram of another single-layer optoelectronic device provided by an embodiment of the present application;

[0023] Figure 3 It is a schematic structural diagram of another single-layer optoelectronic device provided by an embodiment of the present application;

[0024] Figure 4 It is a schematic structural diagram of another single-layer optoelectronic device provided by an embodiment of the present application;

[0025] Figure 5 It is a schematic structural diagram of a stacked optoelectronic device provided by an embodiment of the present application;

[0026] Figure 6 It is a schematic structural diagram of another stacked optoelectronic device provided by an embodiment of the present application;

[0027] Figure 7 It is a flowchart of the preparation method of the optoelectronic device provided by an embodiment of the present application;

[0028] Figure 8 It is a flowchart of the preparation method of another optoelectronic device provided by an embodiment of the present application;

[0029] Figure 9 It is an electron micrograph of the electron generation layer provided by Embodiments 14 - 15, 19 - 20, and Comparative Examples 4 - 5 of the present application.

[0030] Reference numerals:

[0031] Anode 10; cathode 20; optoelectronic unit 30; hole functional layer 301; light-emitting layer 302; electron functional layer 303; first optoelectronic unit 31; first hole functional layer 311; first light-emitting layer 312; first electron functional layer 313; second optoelectronic unit 32, second hole functional layer 321; second light-emitting layer 322; second electron functional layer 323; connection layer 40; electron generation layer 41; hole generation layer 42; first interface layer 51; second interface layer 52; modification layer 60. Detailed implementation manners

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0033] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0034] In the present application, "and / or" describes the association relationship of associated objects and indicates that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Where A and B can be singular or plural.

[0035] In the present application, "at least one" means one or more, and "a plurality" means two or more. "One or several", "at least one (item) below" or similar expressions refer to any combination of these items, including any combination of single (item) or plural items. For example, "at least one (item) among a, b, or c", or, "at least one (item) among a, b, and c" can both represent: a, b, c, a - b (that is, a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0036] The various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the described range description has specifically disclosed all possible sub - ranges and the single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub - ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and the single numbers within the range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. In addition, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0037] The technical solution of the present application is as follows:

[0038] In a first aspect, please refer to Figure 1 , Figure 2 , Figure 3 and Figure 4 , embodiments of the present application provide an optoelectronic device, including

[0039] an anode 10, a cathode 20, and at least one optoelectronic unit 30 disposed between the anode 10 and the cathode 20. Each optoelectronic unit 30 includes a hole functional layer 301, a light-emitting layer 302, and an electron functional layer 303 disposed in sequence along a direction away from the anode 10;

[0040] the material of at least one electron functional layer 303 includes a first electron functional material and a first pyroelectric material; and / or

[0041] the optoelectronic device further includes a first interface layer 51, the first interface layer 51 is disposed between the light-emitting layer 302 and the electron functional layer 303 in at least one optoelectronic unit 30, and the material of the first interface layer 51 includes a second pyroelectric material; and / or

[0042] the optoelectronic device further includes a second interface layer 52, the second interface layer 52 is disposed between the hole functional layer 301 and the light-emitting layer 302 in at least one optoelectronic unit 30, and the material of the second interface layer 52 includes a third pyroelectric material;

[0043] wherein, the first pyroelectric material, the second pyroelectric material, and the third pyroelectric material each independently include adamantaneamine formate.

[0044] It should be noted that a pyroelectric material is a piezoelectric material without a center of symmetry. When the temperature changes, charges will be generated on the surface of the pyroelectric material. The pyroelectric material can convert heat into electrical energy.

[0045] In the optoelectronic device provided by the present application, the electron functional layer 303 contains a first electron functional material and a first pyroelectric material, and / or a first interface layer 51 is additionally provided between the light-emitting layer 302 and the electron functional layer 303, and the first interface layer 51 includes a second pyroelectric material; and / or a second interface layer 52 is additionally provided between the light-emitting layer 302 and the hole functional layer 301, and the second interface layer 52 includes a third pyroelectric material. The pyroelectric material can achieve thermal energy conversion, convert the heat generated during the operation of the optoelectronic device into electrical energy, thereby reducing the thermal aging of the optoelectronic device, increasing the carrier concentration, and extending the service life of the optoelectronic device.

[0046] It can be understood that when the optoelectronic device includes the first interface layer 51 and / or the second interface layer 52, the material of the electron functional layer 303 can be a first electron functional material, that is, without the first pyroelectric material.

[0047] In some embodiments, the first electronic functional material includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0048] In some embodiments, the average particle size of the first electronic functional material is 2 nm to 6 nm, and for example, it can be 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, 5.5 nm, etc.

[0049] In some embodiments, the mass ratio of the first electronic functional material to the first pyroelectric material is 30:(1 - 5), and for example, it can be 30:2, 30:3, 30:4, etc. Within the range of the mass ratio, it is beneficial for the first pyroelectric material to improve the thermal aging problem of optoelectronic devices.

[0050] In some embodiments, the thickness of the electronic functional layer 303 in each optoelectronic unit 30 is 10 nm to 50 nm, and for example, it can be 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, etc. Within the range of the thickness, the transmission of electrons is smooth and the electronic functional layer 303 is uniform and flat.

[0051] In some embodiments, the thicknesses of the first interface layer 51 and the second interface layer 52 are 1 nm to 5 nm respectively, and for example, it can be 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, etc.

[0052] In some embodiments, the first pyroelectric material, the second pyroelectric material, and the third pyroelectric material each independently include adamantane formate.

[0053] At room temperature, adamantylamine formate has the effect of spontaneous polarization. When the temperature changes, the rotation of adamantylamine ions and the change in the degree of disorder of formate ions cause the spontaneous polarization to disappear with the change in temperature, thereby realizing thermal energy conversion. Adamantylamine formate can convert the heat generated during the operation of optoelectronic devices into electrical energy, thereby reducing the thermal aging of optoelectronic devices, increasing the carrier concentration, and prolonging the service life of optoelectronic devices.

[0054] In some embodiments, the chemical formula of the adamantylamine formate is:

[0055] A 1-a A’ a B 1-b B’ b

[0056] Wherein, A is protonated adamantylamine; B is a formate ion; A’ is one or more selected from protonated 2-adamantylamine, protonated halogen-substituted adamantylamine, protonated methyladamantylamine, protonated 3-amino-1-adamantanol, protonated adamantanone, and protonated deuterated adamantylamine; B’ is one or more selected from chloride ion, bromide ion, iodide ion, nitrite ion, hypophosphite ion, acetate ion, halogen-substituted formate ion, halogen-substituted acetate ion, deuterated formate ion, and deuterated acetate ion; 0 ≤ a ≤ 0.3, 0 ≤ b ≤ 0.3.

[0057] Furthermore, in some embodiments, the adamantylamine formate includes one or more of 1-adamantylamine fumarate, 3-amino-1-adamantane formate hydrochloride, 2-(3-aminoadamantan-1-yl)acetic acid hydrochloride, 3-amino-1-adamantanol hydrochloride, 3-noradamantylamine hydrochloride, N-butyl-2-adamantylamine hydrochloride, 3-ethyl-1-adamantylamine hydrochloride, 3-ethyl-1-adamantylamine hydrochloride, N-(4-nitrobenzyl)adamantan-1-amine hydrobromide, 2-bromo-N-methyl-1-adamantylmethylamine hydrochloride, n-butyldi(1-adamantyl)phosphine hydroiodide, 2-(2-adamantanamino)ethanol hydrochloride.

[0058] In some embodiments, the first modification material, the second modification material, and the third modification material are the same or different.

[0059] In some embodiments, the hole functional layer includes one or more of a hole injection layer and a hole transport layer. The electron functional layer includes one or more of an electron injection layer and an electron transport layer.

[0060] It can be understood that the optoelectronic device provided in this application can be an optoelectronic device including 1 optoelectronic unit 30, that is, a single-layer optoelectronic device, or a stacked optoelectronic device including multiple optoelectronic units 30.

[0061] The stacked optoelectronic device may include two, three, four, or five or more optoelectronic units 30. When there are more than three optoelectronic units 30, multiple electron functional layers 303 may be doped with the first pyroelectric material, or any one of the electron functional layers 303 may be doped with the first pyroelectric material. Correspondingly, multiple first interface layers 51 and second interface layers 52 may be provided, or one first interface layer 51 or second interface layer 52 may be provided.

[0062] In some embodiments, when the number of the optoelectronic units 30 is two or more, a connection layer 40 is provided between every two adjacent optoelectronic units 30. The connection layer 40 includes an electron generation layer 41 and a hole generation layer 42 which are sequentially arranged along the direction away from the anode 10.

[0063] During the operation of the optoelectronic device, thermal aging is likely to occur due to heat generation, which may cause film cracking.

[0064] In some embodiments, the material of at least one of the electron generation layers 41 includes a second electron functional material and a first modifying material; and / or

[0065] The optoelectronic device further includes a modifying layer 60 which is disposed between the electron generation layer 41 and the hole generation layer 42 in at least one of the connection layers 40. The material of the modifying layer 60 includes a second modifying material;

[0066] Wherein, the first modifying material and the second modifying material each independently include phthalate compounds.

[0067] It can be understood that phthalate compounds (PAEs), also known as phthalic acid esters, are a general term for esters formed by phthalic acid. The phthalate compounds can improve the density of the electron generation layer 41 and the anti-solvent performance of the electron generation layer 41, thereby improving the cracks in the electron generation layer 41. In addition, the phthalate compounds are insulating, so they can also reduce the electron transport efficiency and promote the concentration balance of electrons and holes in the light-emitting layer, thereby improving the light-emitting efficiency of the optoelectronic device.

[0068] Specifically, in some embodiments, the phthalate compounds include one or more of dimethyl phthalate, diethyl phthalate, di-n-butyl phthalate, dimethoxyethyl phthalate, diallyl phthalate, dioctyl phthalate, dibenzyl phthalate, and butyl benzyl phthalate.

[0069] In some embodiments, the first modifying material and the second modifying material are the same or different.

[0070] In some embodiments, the second electronic functional material includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, IB-IIIA-VIA group semiconductor materials, and phosphomolybdic acid (PMA). The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and MoO3. The metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0071] In some embodiments, the average particle size of the second electronic functional material is 2 nm to 6 nm, and can be, for example, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, 5.5 nm, etc.

[0072] In some embodiments, the mass ratio of the second electronic functional material to the first modifying material is 30:(1 - 5), and can be, for example, 30:2, 30:3, 30:4, etc. Within the range of the mass ratio, it is beneficial for the first modifying material to improve the cracks in the electron generation layer 41, increase the compactness of the electron generation layer 41, and not excessively reduce the electron migration.

[0073] In some embodiments, the thickness of the electron generation layer 41 in each connection layer 40 is 10 nm to 50 nm, and can be, for example, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, etc. Within the range of the thickness, the electron generation layer 41 is uniform and flat.

[0074] In some embodiments, the thickness of the modifying layer 42 is 1 nm to 5 nm, and can be, for example, 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, etc.

[0075] In at least one embodiment, there are 2 photo - electric units 30. The photo - electric unit 30 includes a first photo - electric unit 31 and a second photo - electric unit 32.

[0076] Further, the first optoelectronic unit 31 includes a first hole functional layer 311, a first light-emitting layer 312, and a first electron functional layer 313 that are sequentially stacked; the second optoelectronic unit 32 includes a second hole functional layer 321, a second light-emitting layer 322, and a second electron functional layer 323 that are sequentially stacked.

[0077] Exemplarily, please refer to Figure 5 and Figure 6 , the optoelectronic device includes the anode 10, the first hole functional layer 311, the second interface layer 52, the first light-emitting layer 312, the first interface layer 51, the first electron functional layer 313, the electron generation layer 41, the modification layer 60, the hole generation layer 42, the second hole functional layer 321, the second light-emitting layer 322, the second electron functional layer 323, and the cathode 20 that are stacked.

[0078] In some embodiments, the anode 10 and the cathode 20 each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. Herein, " / " represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including a sequentially stacked AZO layer, an Ag layer, and an AZO layer.

[0079] In some embodiments, the material of the light-emitting layer 302 in each optoelectronic unit independently includes one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0080] The organic light-emitting material may be selected from, but not limited to, one or more of CBP:Ir(mppy)3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium]), diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, TADF (thermally activated delayed) material, polymers containing B-N covalent bonds, HLCT (hybrid local charge transfer excited state) materials, and Exciplex luminescent materials.

[0081] The quantum dot light-emitting material may be selected from, but not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0082] The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots can be respectively selected from, but not limited to, the single-structure quantum dots being selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds can be selected from, but not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds can be selected from, but not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds can be selected from, but not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds can be selected from, but not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0083] As an example, the quantum dots with a core-shell structure can be selected from but not limited to one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the expressions such as CdSe / ZnS above, the " / " indicates that the material after " / " (as the shell layer) coats the material before " / " (as the core layer).

[0084] The general structural formula of the perovskite semiconductor material is DMX3, where D is Cs + , CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is selected from one or more of Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ , and X is selected from one or more of Cl - , Br - , I - .

[0085] In some embodiments, the materials of the hole functional layer 301 and the hole generation layer 42 each independently include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, wherein the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides include one or more of CuS, MoS3, WS3, the metal selenides include one or more of MoSe3, WSe3, and the metal nitrides include p-type gallium nitride.

[0086] It can be understood that the optoelectronic device provided in this application can be a normal-type optoelectronic device or an inverted-type optoelectronic device.

[0087] In a second aspect. Please refer to Figure 7 , an embodiment of this application further provides a method for manufacturing an optoelectronic device, including:

[0088] S11. Provide a preform of the optoelectronic device, where the preform of the optoelectronic device includes an anode 10;

[0089] S12. Dispose at least one optoelectronic unit 30 on the preform of the optoelectronic device. Each optoelectronic unit 30 includes a hole functional layer 301, a light-emitting layer 302, and an electron functional layer 303 that are sequentially disposed in a direction away from the anode 10;

[0090] The material of at least one of the electron functional layers 303 includes a first electron functional material and a first pyroelectric material; and / or

[0091] A first interface layer 51 is disposed between the light-emitting layer 302 and the electron functional layer 303 in at least one of the optoelectronic units 30. The material of the first interface layer 51 includes a second pyroelectric material; and / or

[0092] A second interface layer 52 is disposed between the hole functional layer 301 and the light-emitting layer 302 in at least one of the optoelectronic units 30. The material of the second interface layer 52 includes a third pyroelectric material;

[0093] S13. Form a cathode 20 on the optoelectronic unit 30 away from the anode 10 to obtain an optoelectronic device.

[0094] It can be understood that the optoelectronic device obtained by the above manufacturing method is a normal-type optoelectronic device. This application also provides a manufacturing method for an inverted-type optoelectronic device.

[0095] Specifically, please refer to Figure 8 , a manufacturing method for an inverted-type optoelectronic device includes:

[0096] S21. Provide a preform of the optoelectronic device, where the preform of the optoelectronic device includes a cathode 20;

[0097] S22. Dispose at least one optoelectronic unit 30 on the preform of the optoelectronic device. Each optoelectronic unit 30 includes an electron functional layer 303, a light-emitting layer 302, and a hole functional layer 301 that are sequentially disposed in a direction away from the cathode 20;

[0098] The material of at least one of the electron functional layers 303 includes a first electron functional material and a first pyroelectric material; and / or

[0099] A first interface layer 51 is disposed between the electronic functional layer 303 and the light-emitting layer 302 in at least one of the optoelectronic units 30, and the material of the first interface layer 51 includes a second pyroelectric material; and / or

[0100] A second interface layer 52 is disposed between the light-emitting layer 302 and the hole functional layer 301 in at least one of the optoelectronic units 30, and the material of the second interface layer 52 includes a third pyroelectric material;

[0101] S23. An anode 10 is formed on the optoelectronic unit 30 away from the cathode 20 to obtain an optoelectronic device.

[0102] The first pyroelectric material, the second pyroelectric material, and the third pyroelectric material are as described above and will not be elaborated herein.

[0103] In S12:

[0104] In some embodiments, the method for forming the electronic functional layer 303 containing the first electronic functional material and the first pyroelectric material includes:

[0105] S1211. Providing an electronic functional material solution, which includes a first electronic functional material and a first pyroelectric material;

[0106] S1212. Disposing the electronic functional material solution on the light-emitting layer 302 to form the electronic functional layer 303.

[0107] In some embodiments, in the electronic functional material solution, the mass concentration of the first electronic functional material is 10 mg / mL to 50 mg / mL, and can be, for example, 15 mg / mL, 20 mg / mL, 25 mg / mL, 30 mg / mL, 35 mg / mL, 40 mg / mL, 45 mg / mL, etc. Within the range of the mass concentration, the first electronic functional material is easily dispersed uniformly and not easily agglomerated.

[0108] In some embodiments, in the electronic functional material solution, the mass concentration of the first pyroelectric material is 1 mg / mL to 5 mg / mL, and can be, for example, 2 mg / mL, 3 mg / mL, 4 mg / mL, etc.

[0109] In some embodiments, the electronic functional material solution further includes a first solvent.

[0110] Further, the first solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0111] In some embodiments, after the electronic functional material liquid is disposed on the light-emitting layer 302, a first annealing is further included.

[0112] Further, the temperature of the first annealing is 80°C to 120°C, for example, it can be 90°C, 100°C, 110°C, etc.; the time of the first annealing is 5 min to 10 min, for example, it can be 6 min, 7 min, 8 min, 9 min, etc. Thus, under the annealing conditions, the ligand activity on the surface of the electronic functional layer 303 can be ensured, the steric hindrance can be reduced, and the first solvent can be effectively removed.

[0113] In some embodiments, the method for forming the first interface layer 51 includes:

[0114] S1221. Provide a first pyroelectric material dispersion liquid, which includes a second pyroelectric material;

[0115] S1222. Dispose the first pyroelectric material dispersion liquid on the light-emitting layer 302 to form the first interface layer 51.

[0116] In some embodiments, in the first pyroelectric material dispersion liquid, the mass concentration of the second pyroelectric material is 1 mg / mL to 5 mg / mL, for example, it can be 2 mg / mL, 3 mg / mL, 4 mg / mL, etc.

[0117] In some embodiments, the first pyroelectric material dispersion liquid further includes a second solvent.

[0118] Further, the second solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0119] In some embodiments, the method for forming the second interface layer 52 includes:

[0120] S1231. Provide a second pyroelectric material dispersion liquid, which includes a third pyroelectric material;

[0121] S1232. Set the third pyroelectric material dispersion liquid on the hole functional layer 301 to form a second interface layer 51.

[0122] In some embodiments, in the second pyroelectric material dispersion liquid, the mass concentration of the third pyroelectric material is 1 mg / mL to 5 mg / mL, and can be, for example, 2 mg / mL, 3 mg / mL, 4 mg / mL, etc.

[0123] In some embodiments, the second pyroelectric material dispersion liquid further includes a third solvent.

[0124] Further, the third solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0125] It can be understood that the preparation method of the optoelectronic device can be used to prepare both single-layer optoelectronic devices and stacked optoelectronic devices.

[0126] In some embodiments, two or more optoelectronic units 30 are provided on the optoelectronic device preform, and the preparation method further includes: providing a connection layer 40 between every two adjacent optoelectronic units 30, and the connection layer 40 includes an electron generation layer 41 and a hole generation layer 42 arranged in sequence along the direction away from the anode 10.

[0127] Further, in some embodiments, the material of at least one of the electron generation layers 41 includes a second electron functional material and a first modifier material; and / or

[0128] A modifier layer 60 is provided between the hole generation layer 42 and the electron generation layer 41 in at least one of the connection layers 40, and the material of the modifier layer 60 includes a second modifier material;

[0129] Wherein, the first modifier material and the second modifier material each independently include phthalate compounds.

[0130] In some embodiments, the method for forming the electron generation layer 41 containing the second electron functional material and the first modifier material includes:

[0131] S1241. Provide an electron generation material dispersion liquid, and the electron generation material dispersion liquid includes a second electron functional material and a first modifier material;

[0132] S1242. Set the electron generation material dispersion liquid on the optoelectronic unit 30 to form an electron generation layer 41.

[0133] In some embodiments, in the electron generating material dispersion liquid, the mass concentration of the second electron functional material is 10 mg / mL to 50 mg / mL, and can be, for example, 15 mg / mL, 20 mg / mL, 25 mg / mL, 30 mg / mL, 35 mg / mL, 40 mg / mL, 45 mg / mL, etc. Within the range of the mass concentration, the second electron functional material is easily dispersed uniformly and is not prone to agglomeration.

[0134] In some embodiments, in the electron generating material dispersion liquid, the mass concentration of the first modifying material is 1 mg / mL to 5 mg / mL, and can be, for example, 2 mg / mL, 3 mg / mL, 4 mg / mL, etc.

[0135] In some embodiments, the electron generating material dispersion liquid further includes a fourth solvent.

[0136] Furthermore, the fourth solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0137] In some embodiments, after the electron generating material dispersion liquid is disposed on the optoelectronic unit 30, a second annealing is further included.

[0138] Furthermore, the temperature of the second annealing is 80°C to 120°C, and can be, for example, 90°C, 100°C, 110°C, etc.; the time of the second annealing is 5 min to 10 min, and can be, for example, 6 min, 7 min, 8 min, 9 min, etc. Thus, under the annealing conditions, the ligand activity on the surface of the electron generating layer 41 can be ensured, the steric hindrance can be reduced, and the third solvent can be effectively removed.

[0139] In some embodiments, the method for forming the modifying layer 60 includes:

[0140] S1251. Provide a modifying material dispersion liquid, where the modifying material dispersion liquid includes a second modifying material;

[0141] S1252. Dispose the modifying material dispersion liquid on the electron generating layer 41 to form the modifying layer 60.

[0142] In some embodiments, in the modifying material dispersion liquid, the mass concentration of the modifying material is 1 mg / mL to 5 mg / mL, and can be, for example, 2 mg / mL, 3 mg / mL, 4 mg / mL, etc.

[0143] In some embodiments, a fifth solvent is further included in the modified material dispersion liquid.

[0144] Further, the fifth solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0145] In a third aspect, an embodiment of the present application further provides a display device, and the display device includes the above-mentioned optoelectronic device.

[0146] The display device can be any electronic product with a display function, and the electronic product includes but is not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0147] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0148] Example 1

[0149] This embodiment provides an optoelectronic device, and the preparation method is as follows:

[0150] Clean the ITO conductive glass with a cleaner to initially remove the stains on the surface, and then ultrasonically clean it in deionized water, acetone, absolute ethanol, and deionized water for 20 minutes respectively to remove the impurities on the surface. Finally, dry it with high-purity nitrogen to form an ITO anode;

[0151] Spin-coat PEDOT:PSS with a solute content of 1.5 wt% on the anode and heat it at 150 °C for 15 minutes to form a hole injection layer with a thickness of 30 nm;

[0152] Dissolve TFB in chlorobenzene with a concentration of 8 mg / mL, spin-coat it on the hole injection layer at a rotation speed of 3000 rpm, and heat it at 150 °C for 15 minutes to form a hole transport layer with a thickness of 15 nm;

[0153] Prepare a quantum dot solution of ZnCdSe / ZnS with a mass concentration of 10 mg / mL, spin-coat it on the hole transport layer at a rotation speed of 3000 rpm for 30 s, and heat it at 80 °C for 30 minutes to form a first light-emitting layer with a thickness of 30 nm;

[0154] Provide 2.5 mg of 1 - adamantylamine fumarate and 30 mg of the electronic functional material zinc oxide, mix and dissolve them in ethanol, spin - coat the solution on the first light - emitting layer, and then heat it at 80 °C for 10 min to form a 40 - nm first electron - transport layer;

[0155] On the first electron - transport layer, deposit Ag by thermal evaporation, with a vacuum degree not higher than 3×10 -4 Pa, a speed of 1 Å / s, for 1000 s, and a thickness of 100 nm to form the cathode;

[0156] Encapsulate to obtain the optoelectronic device.

[0157] Example 2

[0158] This example is basically the same as Example 1, except that in this example, the first electron - transport layer does not contain 1 - adamantylamine fumarate;

[0159] After forming the first light - emitting layer, it further includes: dissolving 1 - adamantylamine fumarate to obtain a first pyroelectric material dispersion with a concentration of 2 mg / mL, spin - coating it on the first light - emitting layer to form a first interface layer with a thickness of 3 nm, and forming a first electron - transport layer on the first interface layer.

[0160] Example 3

[0161] This example is basically the same as Example 1, except that in this example, the first electron - transport layer does not contain 1 - adamantylamine fumarate;

[0162] After forming the hole - transport layer, it further includes: dissolving 1 - adamantylamine fumarate to obtain a second pyroelectric material dispersion with a concentration of 2 mg / mL, spin - coating it on the hole - transport layer to form a second interface layer with a thickness of 3 nm, and forming a first light - emitting layer on the second interface layer.

[0163] Example 4

[0164] This example is basically the same as Example 1, except that after forming the hole - transport layer, it further includes: dissolving 1 - adamantylamine fumarate to obtain a second pyroelectric material dispersion with a concentration of 2 mg / mL, spin - coating it on the hole - transport layer to form a second interface layer with a thickness of 3 nm, and forming a first light - emitting layer on the second interface layer; after forming the first light - emitting layer, it further includes: dissolving 1 - adamantylamine fumarate to obtain a first pyroelectric material dispersion with a concentration of 2 mg / mL, spin - coating it on the first light - emitting layer to form a first interface layer with a thickness of 3 nm, and forming a first electron - transport layer on the first interface layer.

[0165] Example 5

[0166] This example is basically the same as Example 4, except that in this example, the material of the first interface layer is 3-ethyl-1-adamantanamine hydrochloride, and the material of the second interface layer is N-(4-nitrobenzyl)adamantan-1-amine hydrobromide.

[0167] Example 6

[0168] This example is basically the same as Example 1, except that in this example, 1-adamantanamine fumarate is replaced with n-butyldi(1-adamantyl)phosphine hydroiodide.

[0169] Example 7

[0170] This example is basically the same as Example 1, except that in this example, the mass of 1-adamantanamine fumarate is 5 mg.

[0171] Example 8

[0172] This example is basically the same as Example 1, except that in this example, the mass of 1-adamantanamine fumarate is 2.5 mg.

[0173] Example 9

[0174] This comparative example is basically the same as Example 1, except that in this comparative example, the mass of 1-adamantanamine fumarate is 8 mg.

[0175] Example 10

[0176] This example is basically the same as Example 1, except that in this example, after forming the first electron transport layer, it further includes:

[0177] Providing a zinc oxide solution with a mass concentration of 10 mg / mL, spin-coating it on the first electron transport layer to form an electron generation layer with a thickness of 10 nm; providing a TFB solution with a mass concentration of 8 mg / mL, spin-coating it on the electron generation layer to form a hole generation layer with a thickness of 15 nm; spin-coating ZnCdSe / ZnS quantum dots on the hole generation layer to form a second light-emitting layer with a thickness of 30 nm; spin-coating magnesium-doped zinc oxide on the second light-emitting layer to form a second electron transport layer with a thickness of 40 nm, evaporating a 100 nm Ag electrode and encapsulating to obtain an optoelectronic device.

[0178] Example 11

[0179] This example is basically the same as Example 10, except that in this example, the preparation method of the electron generation layer includes: providing 2.5 mg of diethyl phthalate and 30 mg of the electron functional material zinc oxide, mixing and dissolving them in ethanol, spin-coating it on the first electron transport layer, and then heating it at 80 °C for 10 min to form an electron generation layer with a thickness of 40 nm.

[0180] Example 12

[0181] This example is basically the same as Example 10, except that after forming the electron generation layer, this example further includes dissolving diethyl phthalate to obtain a modified material dispersion with a concentration of 2 mg / mL, spin-coating it on the electron generation layer to form a modified layer with a thickness of 3 nm, and forming a hole generation layer on the modified layer.

[0182] Example 13

[0183] This example is basically the same as Example 11, except that after forming the electron generation layer, this example further includes dissolving diethyl phthalate to obtain a modified material dispersion with a concentration of 2 mg / mL, spin-coating it on the electron generation layer to form a modified layer with a thickness of 3 nm, and forming a hole generation layer on the modified layer.

[0184] Example 14

[0185] This example is basically the same as Example 4, except that after forming the first electron transport layer, this example further includes:

[0186] Providing a zinc oxide solution with a mass concentration of 10 mg / mL, spin-coating it on the first electron transport layer to form an electron generation layer with a thickness of 10 nm; providing a TFB solution with a mass concentration of 8 mg / mL, spin-coating it on the electron generation layer to form a hole generation layer with a thickness of 15 nm; spin-coating ZnCdSe / ZnS quantum dots on the hole generation layer to form a second light-emitting layer with a thickness of 30 nm; spin-coating magnesium-doped zinc oxide on the second light-emitting layer to form a second electron transport layer with a thickness of 40 nm, evaporating a 100 nm Ag electrode and encapsulating it to obtain an optoelectronic device.

[0187] Example 15

[0188] This example is basically the same as Example 14, except that the preparation method of the electron generation layer in this example includes: providing 2.5 mg of diethyl phthalate and 30 mg of the electron functional material zinc oxide, mixing and dissolving them in ethanol, spin-coating it on the first electron transport layer, and then heating it at 80 °C for 10 min to form an electron generation layer with a thickness of 40 nm.

[0189] Example 16

[0190] This example is basically the same as Example 14, except that after forming the electron generation layer, this example further includes dissolving diethyl phthalate to obtain a modified material dispersion with a concentration of 2 mg / mL, spin-coating it on the electron generation layer to form a modified layer with a thickness of 3 nm, and forming a hole generation layer on the modified layer.

[0191] Example 17

[0192] This example is basically the same as Example 15, except that after forming the electron generation layer, this example further includes dissolving diethyl phthalate to obtain a modified material dispersion with a concentration of 2 mg / mL, spin-coating it on the electron generation layer to form a modified layer with a thickness of 3 nm, and forming a hole generation layer on the modified layer.

[0193] Example 18

[0194] This example is basically the same as Example 17, except that this example further contains 1-adamantanamine fumarate in the first electron transport layer.

[0195] Example 19

[0196] This example is basically the same as Example 11, except that in this example, diethyl phthalate is replaced by di-n-butyl phthalate.

[0197] Example 20

[0198] This example is basically the same as Example 11, except that in this example, the mass of diethyl phthalate is 5 mg.

[0199] Example 21

[0200] This example is basically the same as Example 11, except that in this example, the mass of diethyl phthalate is 2.5 mg.

[0201] Comparative Example 22

[0202] This comparative example is basically the same as Example 11, except that in this comparative example, the mass of diethyl phthalate is 8 mg.

[0203] Comparative Example 1

[0204] This comparative example is basically the same as Example 1, except that in this comparative example, the first electron transport layer does not contain 1-adamantanamine fumarate.

[0205] Comparative Example 2

[0206] This comparative example is basically the same as Example 1, except that in this comparative example, 1-adamantanamine fumarate is replaced by 2-ethylhexyl phthalate.

[0207] Comparative Example 3

[0208] This comparative example is basically the same as Example 10, except that in this comparative example, the first electron functional layer does not contain 1-adamantanamine fumarate.

[0209] The morphologies of the electron generation layers of Examples 15-16, 20-22 and the electron generation layer of Comparative Example 3 were observed by an electron microscope without power supply, and their morphological parameters were obtained. Figure 9 as shown.

[0210] It can be seen from Figure 9 that in the stacked device, the cracks in the electron generation layer of Comparative Example 3 are very obvious. However, the electron generation layers provided in the examples of the present application are doped with a modifying material or provided with a modifying layer for improvement, and the electron generation layer has high compactness, and the thin film is complete and uniform, and no obvious cracks are observed.

[0211] The current efficiencies (CE) of the optoelectronic devices of Examples 1-22 and Comparative Examples 1-3 were respectively tested, and the results are shown in Table 1.

[0212] Among them, the current efficiency (CE) was calculated by testing with a Keithley 2400 high-precision digital source meter, an Ocean Optic USB2000+ spectrometer, and an LS-160 luminance meter.

[0213] Table 1

[0214]

[0215]

[0216] It can be seen from Table 1 that:

[0217] It can be obtained from Examples 1-9 and Comparative Example 1 that whether doping a pyroelectric material in the first electron transport layer, adding a first interface layer between the first electron transport layer and the light-emitting layer, or adding a second interface layer between the hole transport layer and the light-emitting layer, the current efficiency of the optoelectronic device can be effectively improved; replacing the pyroelectric material has no significant effect on the performance of the optoelectronic device;

[0218] It can be obtained from Examples 1, 10-13 and Comparative Examples 1-3 that the performance of the stacked optoelectronic device is generally better than that of the single-layer optoelectronic device. Adding a modifying material phthalate compound in the stacked optoelectronic device can further improve the current efficiency of the optoelectronic device; among them, in Example 13, both the modifying material and the modifying layer are doped, and its performance has a slight decrease in current efficiency compared with Example 11 where only the modifying material is doped or Example 12 where only the modifying layer is provided, but both are better than the conventional stacked optoelectronic device of Comparative Example 3; in addition, compared with Comparative Example 2 using 2-ethylhexyl phthalate and zinc oxide as the materials of the electron transport layer, the present application provides an interface layer or dopes a pyroelectric material in the first electron transport layer, which can effectively improve the heat generation phenomenon of the optoelectronic device, and thus improve the current efficiency of the optoelectronic device;

[0219] It can be seen from Examples 14 to 22 and Comparative Example 4 that when the modifying material is doped and the modifying layer is provided simultaneously, if the dosage of phthalate compounds is excessive, the performance will decline compared with that of doping the modifying material alone or providing the modifying layer alone; replacing the modifying material has no significant effect on the current efficiency of the optoelectronic device, and can effectively improve the optoelectronic performance of the optoelectronic device.

[0220] The optoelectronic device, its preparation method, and the display device provided by the embodiments of the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. An optoelectronic device, characterized in that, It includes an anode, a cathode, and at least one optoelectronic unit disposed between the anode and the cathode. Each optoelectronic unit includes a hole functional layer, a light-emitting layer, and an electron functional layer sequentially disposed in a direction away from the anode; The material of at least one of the electron functional layers includes a first electron functional material and a first pyroelectric material; and / or The optoelectronic device further includes a first interface layer disposed between the light-emitting layer and the electron functional layer in at least one of the optoelectronic units, and the material of the first interface layer includes a second pyroelectric material; and / or The optoelectronic device further includes a second interface layer disposed between the hole functional layer and the light-emitting layer in at least one of the optoelectronic units, and the material of the second interface layer includes a third pyroelectric material.

2. The optoelectronic device according to claim 1, wherein, The first pyroelectric material, the second pyroelectric material, and the third pyroelectric material each independently include adamantylamine formate, and the chemical formula of the adamantylamine formate is: A 1-a A’ a B 1-b B’ b Wherein, A is protonated adamantylamine; B is formate ion; A' is one or more selected from protonated 2-adamantylamine, protonated halogen-substituted adamantylamine, protonated methyladamantylamine, protonated 3-amino-1-adamantanol, protonated adamantanone, and protonated deuterated adamantylamine; B' is one or more selected from chloride ion, bromide ion, iodide ion, nitrite ion, hypophosphite ion, acetate ion, halogen-substituted formate ion, halogen-substituted acetate ion, deuterated formate ion, and deuterated acetate ion; 0 ≤ a ≤ 0.3, 0 ≤ b ≤ 0.

3.

3. The optoelectronic device according to claim 2, wherein The adamantylamine formate includes one or more of 1-adamantylamine fumarate, 3-amino-1-adamantane formate hydrochloride, 2-(3-aminoadamantan-1-yl)acetic acid hydrochloride, 3-amino-1-adamantanol hydrochloride, 3-noradamantylamine hydrochloride, N-butyl-2-adamantylamine hydrochloride, 3-ethyl-1-adamantylamine hydrochloride, 3-ethyl-1-adamantylamine hydrochloride, N-(4-nitrobenzyl)adamantan-1-amine hydrobromide, 2-bromo-N-methyl-1-adamantylmethylamine hydrochloride, n-butylbis(1-adamantyl)phosphine hydroiodide, 2-(2-adamantylamino)ethanol hydrochloride; and / or The first pyroelectric material, the second pyroelectric material, and the third pyroelectric material are the same or different.

4. The optoelectronic device according to claim 1, wherein The average particle size of the first electron functional material is 2 nm to 6 nm; and / or The mass ratio of the first electron functional material to the first pyroelectric material is 30:(1 to 5); and / or The first electronic functional material includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or The thickness of the electronic functional layer in each of the optoelectronic units is 10 nm to 50 nm respectively; and / or The thicknesses of the first interface layer and the second interface layer are 1 nm to 5 nm respectively.

5. The optoelectronic device according to claim 1, characterized in that, The number of the optoelectronic units is more than 2. A connection layer is arranged between every two adjacent optoelectronic units. The connection layer includes an electron generation layer and a hole generation layer arranged in sequence along the direction away from the anode; The material of at least one of the electron generation layers includes a second electronic functional material and a first modifying material; and / or The optoelectronic device further includes a modifying layer. The modifying layer is arranged between the electron generation layer and the hole generation layer in at least one of the connection layers. The material of the modifying layer includes a second modifying material; Wherein, the first modifying material and the second modifying material each independently include phthalate compounds.

6. The optoelectronic device according to claim 5, wherein The phthalate compounds include one or more of dimethyl phthalate, diethyl phthalate, di-n-butyl phthalate, dimethoxyethyl phthalate, diallyl phthalate, dioctyl phthalate, dibenzyl phthalate, and butyl benzyl phthalate; and / or The first modifying material and the second modifying material are the same or different.

7. The optoelectronic device according to claim 5, wherein The average particle size of the second electronic functional material is 2 nm to 6 nm; and / or The mass ratio of the second electronic functional material to the first modifying material is 30:(1-5); and / or The second electronic functional material includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, IB-IIIA-VIA group semiconductor materials, and phosphomolybdic acid. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and MoO3. The metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or The thickness of the electron generation layer in each of the connection layers is 10 nm to 50 nm respectively; and / or The thickness of the modification layer is 1 nm to 5 nm.

8. The optoelectronic device according to claim 5, characterized in that, When the optoelectronic device includes two of the optoelectronic units, the optoelectronic units include a first optoelectronic unit and a second optoelectronic unit. The first optoelectronic unit includes a first hole functional layer, a first light-emitting layer, and a first electronic functional layer stacked. The second optoelectronic unit includes a second hole functional layer, a second light-emitting layer, and a second electronic functional layer stacked. The optoelectronic device includes the anode, the first hole functional layer, the second interface layer, the first light-emitting layer, the first interface layer, the first electronic functional layer, the electron generation layer, the modification layer, the hole generation layer, the second hole functional layer, the second light-emitting layer, the second electronic functional layer, and the cathode stacked.

9. The optoelectronic device according to claim 5, wherein The anode and the cathode each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide includes a metal oxide electrode or a composite electrode in which a doped or undoped transparent metal oxide sandwiches a metal, the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or The material of the light-emitting layer in each of the photoelectric units independently includes one or more of an organic light-emitting material and quantum dots; the organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium], diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, TADF material, polymers containing B-N covalent bonds, HLCT material, Exciplex light-emitting material; the quantum dots include one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds; the shell layer of the core-shell structure quantum dots is one or more layers; the II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe;The III-V compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI compounds include one or more of CuInS2, CuInSe2, and AgInS2; the structural general formula of the perovskite semiconductor material is DMX3, where D is Cs; + 、CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is selected from one or more of Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2 + , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ , and X is selected from one or more of Cl - , Br - , I - ; and / or The materials of the hole functional layer and the hole generation layer each independently include one or more of 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides. The metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, V2O5. The doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V. The metal sulfides include one or more of CuS, MoS3, WS3. The metal selenides include one or more of MoSe3, WSe3. The metal nitrides include p-type gallium nitride.

10. A method for preparing an optoelectronic device, characterized in that, Comprising: Provide a preform of an optoelectronic device, the preform of the optoelectronic device including an anode; Provide at least one optoelectronic unit on the preform of the optoelectronic device, each optoelectronic unit including a hole functional layer, a light-emitting layer, and an electron functional layer sequentially arranged in a direction away from the anode; the material of at least one electron functional layer includes a first electron functional material and a first pyroelectric material, and / or a first interface layer is provided between the light-emitting layer and the electron functional layer in at least one optoelectronic unit, the material of the first interface layer including a second pyroelectric material, and / or a second interface layer is provided between the hole functional layer and the light-emitting layer in at least one optoelectronic unit, the material of the second interface layer including a third pyroelectric material; Form a cathode on the optoelectronic unit away from the anode to obtain an optoelectronic device; Or, Provide a preform of an optoelectronic device, the preform of the optoelectronic device including a cathode; Provide at least one optoelectronic unit on the preform of the optoelectronic device, each optoelectronic unit including an electron functional layer, a light-emitting layer, and a hole functional layer sequentially arranged in a direction away from the cathode; the material of at least one electron functional layer includes a first electron functional material and a first pyroelectric material, and / or a first interface layer is provided between the electron functional layer and the light-emitting layer in at least one optoelectronic unit, the material of the first interface layer including a second pyroelectric material, and / or a second interface layer is provided between the light-emitting layer and the hole functional layer in at least one optoelectronic unit, the material of the second interface layer including a third pyroelectric material; Form an anode on the optoelectronic unit away from the cathode to obtain an optoelectronic device.

11. The preparation method according to claim 10, wherein The first pyroelectric material, the second pyroelectric material, and the third pyroelectric material each independently include adamantylamine formate; the chemical formula of the adamantylamine formate is: A 1-a A’ a B 1-b B’ b wherein, A is protonated adamantylamine; B is formate ion; A' is one or more selected from protonated 2-adamantylamine, protonated halogen-substituted adamantylamine, protonated methyladamantylamine, protonated 3-amino-1-adamantanol, protonated adamantanone, and protonated deuterated adamantylamine; B' is one or more selected from chloride ion, bromide ion, iodide ion, nitrite ion, hypophosphite ion, acetate ion, halogen-substituted formate ion, halogen-substituted acetate ion, deuterated formate ion, and deuterated acetate ion; 0≤a≤0.3, 0≤b≤0.3; and / or The first pyroelectric material, the second pyroelectric material, and the third pyroelectric material are the same or different.

12. The preparation method according to claim 10, characterized in that, The method for forming the electron functional layer containing the first electron functional material and the first pyroelectric material includes: Provide an electron functional material dispersion liquid, the electron functional material dispersion liquid including a first electron functional material and a first pyroelectric material; Set the electron functional material dispersion liquid on the light-emitting layer to form an electron functional layer.

13. The preparation method according to claim 12, wherein In the electronic functional material dispersion liquid, the mass concentration of the first electronic functional material is 10 mg / mL to 50 mg / mL; and / or In the electronic functional material dispersion liquid, the mass concentration of the first pyroelectric material is 1 mg / mL to 5 mg / mL; and / or The electronic functional material dispersion liquid further includes a first solvent; the first solvent includes one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol; and / or After the electronic functional material dispersion liquid is disposed on the light-emitting layer, a first annealing is further included; the temperature of the first annealing is 80 °C to 120 °C, and the time is 5 min to 10 min.

14. The preparation method according to claim 10, wherein The method for forming the first interface layer includes: providing a first pyroelectric material dispersion liquid, which includes a second pyroelectric material; disposing the first pyroelectric material dispersion liquid on the light-emitting layer to form a first interface layer; and / or The method for forming the second interface layer includes: providing a second pyroelectric material dispersion liquid, which includes a third pyroelectric material; disposing the third pyroelectric material dispersion liquid on the hole functional layer to form a second interface layer.

15. The preparation method according to claim 14, wherein In the first pyroelectric material dispersion liquid, the mass concentration of the second pyroelectric material is 1 mg / mL to 5 mg / mL; and / or In the second pyroelectric material dispersion liquid, the mass concentration of the third pyroelectric material is 1 mg / mL to 5 mg / mL; and / or The first pyroelectric material dispersion liquid further includes a second solvent, and the second pyroelectric material dispersion liquid further includes a third solvent; the second solvent and the third solvent each independently include one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

16. The preparation method according to claim 10, characterized in that, When two or more optoelectronic units are disposed on the optoelectronic device preform, the preparation method further includes: disposing a connection layer between every two adjacent optoelectronic units, and the connection layer includes an electron generation layer and a hole generation layer sequentially disposed along the direction away from the anode; The material of at least one of the electron generation layers includes a second electronic functional material and a first modification material, and / or, a modification layer is disposed between the hole generation layer and the electron generation layer in at least one of the connection layers, and the material of the modification layer includes a second modification material; Wherein, the first modification material and the second modification material each independently include phthalate compounds.

17. The preparation method according to claim 16, wherein the phthalate compound includes one or more of dimethyl phthalate, diethyl phthalate, di-n-butyl phthalate, dimethoxyethyl phthalate, diallyl phthalate, dioctyl phthalate, dibenzyl phthalate, and butyl benzyl phthalate; and / or the first modification material and the second modification material are the same or different.

18. The preparation method according to claim 16, wherein the method for forming the electron generation layer containing the second electron functional material and the first modification material includes: providing an electron generation material dispersion liquid, which includes the second electron functional material and the first modification material; disposing the electron generation material dispersion liquid on the optoelectronic unit to form an electron generation layer; and / or the method for forming the modification layer includes: providing a modification material dispersion liquid, which includes the second modification material; disposing the second modification material dispersion liquid on the electron generation layer to form a modification layer.

19. The preparation method according to claim 18, wherein in the electron generation material dispersion liquid, the mass concentration of the second electron functional material is 10 mg / mL to 50 mg / mL; and / or in the electron generation material dispersion liquid, the mass concentration of the first modification material is 1 mg / mL to 5 mg / mL; and / or after disposing the electron generation material dispersion liquid on the optoelectronic unit, a second annealing is further included; the temperature of the second annealing is 80 °C to 120 °C, and the time is 5 min to 10 min; and / or in the modification material dispersion liquid, the mass concentration of the second modification material is 1 mg / mL to 5 mg / mL; and / or the electron generation material dispersion liquid further includes a fourth solvent, and the modification material dispersion liquid further includes a fifth solvent; the fourth solvent and the fifth solvent each independently include one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

20. A display device, characterized in that, including the optoelectronic device according to any one of claims 1 to 9, or including the optoelectronic device prepared by the preparation method according to any one of claims 10 to 19.

Images