Method for preparing resistive layer of variable resistance type memory based on laser pulse

Abstract

The invention relates to the field of semiconductor device preparation, and provides a method for preparing a resistive layer of a variable resistance type memory based on laser pulse, which comprises the following steps: depositing a buffer layer on a bottom electrode layer of a pre-prepared variable resistance type memory, the material of the buffer layer comprising any one or more of tungsten, tantalum, nitrogen and boron; depositing a seed layer on the buffer layer; a target material is shot based on laser pulse shock, the target material is deposited on the seed layer to form a resistive layer, and the target material comprises any one or more of scandium, titanium, strontium, yttrium, lanthanum and barium and aluminum nitride. The method and the device are used for solving the defect of low read-write speed of the variable resistance type memory in the related technology, and the read-write speed of the variable resistance type memory can be improved based on preparation of the resistive layer by using aluminum nitride.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device preparation, and particularly to a method for preparing a resistive switching layer of a resistive random access memory based on laser pulses. Background Art

[0002] A resistive random access memory (RRAM) is a new type of non-volatile memory, which has performances such as low power consumption and high-speed rewriting, and thus is widely used in the semiconductor field.

[0003] The resistive switching layer in the resistive random access memory is a key structure. Based on the change of the resistance value, the resistive switching layer can realize the storage and release of data.

[0004] Due to the limitation of the performance of the resistive switching layer, the resistive random access memory applied in the related technology has the disadvantage of slow data reading and writing speed, and cannot meet the usage requirements. Summary of the Invention

[0005] The present invention provides a method for preparing a resistive switching layer of a resistive random access memory based on laser pulses to solve the defect of slow reading and writing speed of the resistive random access memory in the related technology. The solution of the present application is based on using aluminum nitride to prepare the resistive switching layer, which can improve the reading and writing speed of the resistive random access memory.

[0006] The present invention provides a method for preparing a resistive switching layer of a resistive random access memory based on laser pulses, including:

[0007] Depositing a buffer layer on a bottom electrode layer of a pre-prepared resistive random access memory, wherein the material of the buffer layer includes any one or more of tungsten, tantalum, nitrogen, and boron;

[0008] Depositing a seed layer on the buffer layer;

[0009] Based on laser pulse bombardment of a target, the target is deposited on the seed layer to form a resistive switching layer, and the material of the target includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride.

[0010] According to the method for preparing a resistive switching layer of a resistive random access memory based on laser pulses provided by the present invention, the deposition method of the bottom electrode layer includes:

[0011] Based on physical vapor deposition or chemical vapor deposition, a bottom electrode material is deposited on a wafer substrate, and the bottom electrode material includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride.

[0012] The method for preparing a resistive switching layer of a variable resistive memory based on laser pulses provided by the present invention, wherein the wafer substrate is a complementary metal oxide semiconductor structure.

[0013] The method for preparing a resistive switching layer of a variable resistive memory based on laser pulses provided by the present invention, wherein depositing a seed layer on the buffer layer includes:

[0014] Depositing a seed layer material on the buffer layer based on physical vapor deposition, and the seed layer material includes any one or more of platinum, molybdenum, aluminum, and ruthenium.

[0015] The method for preparing a resistive switching layer of a variable resistive memory based on laser pulses provided by the present invention, wherein the mass ratio of aluminum nitride in the material of the resistive switching layer is 30%-98%.

[0016] The method for preparing a resistive switching layer of a variable resistive memory based on laser pulses provided by the present invention, wherein the laser source of the laser pulse is a krypton fluoride laser of 248 nanometers, the output energy of the krypton fluoride laser is 100 millijoules to 500 millijoules, and the output frequency is 5 hertz to 120 hertz.

[0017] The present invention also provides a variable resistive memory, at least including: a wafer substrate, a bottom electrode layer, a seed layer, a resistive switching layer, and a top electrode layer;

[0018] Wherein the resistive switching layer is prepared by using any one of the above methods for preparing a resistive switching layer of a variable resistive memory based on laser pulses.

[0019] The variable resistive memory provided by the present invention, wherein the thickness of the resistive switching layer is 10 nanometers to 50 nanometers.

[0020] The variable resistive memory provided by the present invention, wherein the top electrode layer is obtained based on the following method:

[0021] Depositing a top electrode material on the resistive switching layer based on physical vapor deposition or chemical vapor deposition, and the top electrode material includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride.

[0022] The present invention also provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the program, it implements any one of the above methods for preparing a resistive switching layer of a variable resistive memory based on laser pulses.

[0023] The present invention also provides a non-transitory computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, it implements any one of the above methods for preparing a resistive switching layer of a variable resistive memory based on laser pulses.

[0024] The present invention also provides a computer program product, including a computer program, which when executed by a processor, implements any of the above methods for preparing a resistive switching layer of a resistive random access memory based on laser pulses.

[0025] In the method for preparing a resistive switching layer of a resistive random access memory based on laser pulses provided by the present invention, depositing a buffer layer and a seed layer on the bottom electrode layer can help the resistive switching layer to be deposited better. When depositing the resistive switching layer, by using the high resistivity and good resistive switching properties of aluminum nitride, the resistive switching performance of the resistive switching layer can be improved. At the same time, doping rare elements such as scandium, titanium, strontium, yttrium, lanthanum, and barium into the resistive switching layer can further enhance the resistive switching performance of the resistive switching layer. In addition, the method of laser pulse deposition can also avoid generating high temperatures during the deposition process, and the low-temperature deposition conditions can avoid the influence of high temperatures on the material of the resistive switching layer, enabling the resistive switching layer to exhibit the best performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0027] Figure 1 is one of the schematic flowcharts of the method for preparing a resistive switching layer of a resistive random access memory based on laser pulses provided by an embodiment of the present invention;

[0028] Figure 2 is another schematic flowchart of the method for preparing a resistive switching layer of a resistive random access memory based on laser pulses provided by an embodiment of the present invention;

[0029] Figure 3 is a schematic structural diagram of a resistive random access memory provided by an embodiment of the present invention;

[0030] Figure 4 is a schematic physical structure diagram of an electronic device provided by an embodiment of the present invention.

[0031] Wherein:

[0032] 100 - bottom electrode layer; 201 - seed layer; 202 - resistive switching layer; 300 - top electrode layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0033] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present invention without creative efforts shall fall within the protection scope of the present invention.

[0034] Figure 1 It is one of the flow schematic diagrams of the method for preparing a resistive switching layer of a variable resistive memory based on laser pulses provided by an embodiment of the present invention.

[0035] As Figure 1 shown, this embodiment provides a method for preparing a resistive switching layer of a variable resistive memory based on laser pulses, including:

[0036] Step 101, depositing a buffer layer on a bottom electrode layer of a pre-prepared variable resistive memory, where the material of the buffer layer includes any one or more of tungsten, tantalum, nitrogen, and boron;

[0037] Depositing the buffer layer on the bottom electrode layer first in this step can help improve the quality and performance of the subsequent structure. Specifically, the buffer layer can use amorphous metal materials. Amorphous metal materials have a disordered atomic arrangement structure, and this structural characteristic enables them to well adapt to the interfaces of different materials, thereby reducing interface stress and improving the stability of the overall structure. Introducing such a buffer layer before depositing the seed layer can effectively alleviate the lattice mismatch problem caused by material mismatch, and further optimize the deposition quality of the seed layer. Secondly, amorphous metal materials usually have good chemical stability and thermal stability. This means that they can maintain stable performance under various deposition conditions and are not prone to chemical reactions or phase changes. This stability is crucial for the subsequent deposition process and the performance of the final product.

[0038] On the other hand, amorphous metal materials can also serve as good diffusion barrier layers. During the deposition process, some elements may diffuse into other layers through diffusion, resulting in a decline in performance. Due to their disordered structure and relatively high diffusion activation energy, amorphous metal materials can effectively block this diffusion process and protect the subsequently deposited seed layer and other key layers from contamination.

[0039] Exemplarily, the buffer layer can be deposited by physical vapor deposition.

[0040] The thickness of the buffer layer can be 0.5 nanometers to 3 nanometers, preferably 1.5 nanometers.

[0041] Step 102, depositing a seed layer on the buffer layer;

[0042] In this step, depositing a seed layer on the buffer layer can promote adhesion, improve crystallinity, and act as a diffusion barrier. Specifically, the seed layer can provide a good adhesion surface, enabling the subsequently deposited thin film to firmly adhere to the substrate; the seed layer can also guide the crystallization process of the subsequently deposited thin film to form the desired crystal structure; the seed layer can also act as a diffusion barrier to prevent impurities or elements in the substrate material from diffusing into the subsequently deposited thin film. This is crucial for maintaining the performance and stability of the variable resistive memory.

[0043] In practical applications, depositing the seed layer on the buffer layer includes:

[0044] Depositing the seed layer material on the buffer layer based on a physical vapor deposition method, where the seed layer material includes any one or more of platinum, molybdenum, aluminum, and ruthenium.

[0045] And the thickness of the seed layer can be 1 nanometer to 5 nanometers, preferably 3 nanometers.

[0046] Step 103, based on laser pulse bombardment of the target, the target is deposited on the seed layer to form a resistive switching layer, and the material of the target includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride.

[0047] Figure 2 It is the second flow schematic diagram of the method for preparing a resistive switching layer of a variable resistive memory based on laser pulses provided by an embodiment of the present invention.

[0048] As Figure 2 shown, when using a laser pulse to bombard the target, the target and the already prepared bottom electrode layer, buffer layer, and seed layer, etc. can be placed in a vacuum chamber, the base pressure of the vacuum chamber is less than 9×10 -6 Torr, and the purity of the used target is greater than 3N. The laser source uses a 248nm krypton fluoride laser (KrF) as the laser source, the output energy is 100 millijoules (mJ) to 500 millijoules (mj), preferably 300 mj, the frequency is 5 hertz (Hz) to 120 hertz (Hz), preferably 60 Hz; during deposition, the rotation speed of the substrate is 20 revolutions per minute (rpm) to 45 rpm, preferably 30 revolutions per minute (rpm), the pressure is 0.8 mTorr to 50 mTorr, preferably 25 mTorr. Nitrogen can be injected into the vacuum chamber as a protective gas during the deposition process, the flow rate of nitrogen is 50 standard cubic centimeters per minute (sccm) to 500 sccm, and argon can be selectively introduced as a protective gas.

[0049] In the method for preparing a resistive switching layer of a variable resistive memory based on laser pulses provided in this embodiment, depositing a buffer layer and a seed layer on the bottom electrode layer can help the resistive switching layer to be deposited better. When depositing the resistive switching layer, the high resistivity and good resistive switching properties of aluminum nitride can be utilized to improve the resistive switching performance of the resistive switching layer. At the same time, doping rare elements such as scandium, titanium, strontium, yttrium, lanthanum, and barium into the resistive switching layer can further enhance the resistive switching performance of the resistive switching layer. In addition, the laser pulse deposition method can also avoid generating high temperatures during the deposition process, and the low-temperature deposition conditions can prevent high temperatures from affecting the material of the resistive switching layer, enabling the resistive switching layer to exhibit its best performance.

[0050] In an exemplary embodiment, the deposition method of the bottom electrode layer includes:

[0051] Based on physical vapor deposition or chemical vapor deposition, deposit the bottom electrode material on the wafer substrate, and the bottom electrode material includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride.

[0052] In an exemplary embodiment, the wafer substrate is a complementary metal oxide semiconductor structure.

[0053] Utilizing the excellent electrical properties of the complementary metal oxide semiconductor structure (Complementary Metal Oxide Semiconductor, CMOS), such as low leakage current and high switching speed, to prepare the wafer substrate can help improve the performance of the RRAM. For example, it can reduce power consumption during use and increase data read / write speed, etc.

[0054] In practical applications, the core structure of CMOS is a pair of complementary transistors, namely an N-type MOS transistor (NMOS) and a P-type MOS transistor (PMOS). Among them, the N-type transistor can be prepared based on N-type semiconductor materials, and the P-type transistor can be prepared based on P-type semiconductor materials. These two types of transistors work together in the circuit to achieve logical functions. The driving transistor usually refers to the transistor responsible for driving the load (such as subsequent circuits, capacitors, etc.) in the circuit. In CMOS, the driving transistor can, through changes in the on and off states, achieve logical functions in the CMOS circuit, such as inverters, AND gates, OR gates, etc., and can also drive loads such as subsequent circuits or capacitors to ensure the correct transmission and processing of signals.

[0055] Furthermore, the driving transistor provided in the CMOS structure in this embodiment can be an FDSOI driving transistor, a FinFET driving transistor, a GAA-type driving transistor, a HKMG / Poly SiON-type driving transistor, etc. The above driving transistors are also obtained through structural innovations or material replacements based on P-type semiconductor materials and / or N-type semiconductor materials.

[0056] Among them, the SDSOI driving transistor can be based on a conventional CMOS structure, and a fully depleted channel can be realized through an ultra-thin insulating layer. The SDSOI driving transistor is applicable to P-type transistors and N-type transistors, and the electrostatic performance and power consumption control are improved through structural optimization.

[0057] The FinFET driving transistor can adopt a three-dimensional fin structure to enhance the gate's control ability over the channel. It is applicable to P-type transistors and N-type transistors, and the circuit performance is improved by reducing leakage current.

[0058] The GAA-type driving transistor realizes more precise current control by completely surrounding the channel with the gate. It can be applied to P-type and N-type transistors and can improve the scaling ability and performance in advanced processes.

[0059] The HKMG / Poly SiON-type driving transistor replaces silicon dioxide with a high-K material and replaces the polysilicon gate with a metal material. Both are applicable to P-type and N-type transistors and can be used to optimize gate leakage current and working efficiency.

[0060] In an exemplary embodiment, depositing the seed layer on the buffer layer includes:

[0061] Depositing the seed layer material on the buffer layer based on a physical vapor deposition method, and the seed layer material includes any one or more of platinum, molybdenum, aluminum, and ruthenium.

[0062] In an exemplary embodiment, the mass ratio of aluminum nitride in the material of the resistive switching layer is 30%-98%.

[0063] In practical applications, the material of the resistive switching layer satisfies the following chemical formula: Al 1-x (X 1-y Y y ) x N, where both X and Y are doped metal elements, that is, any one of scandium, titanium, strontium, yttrium, lanthanum, and barium. x is 2%-70%, that is, the mass ratio of the doped metal element other than aluminum nitride in the resistive switching layer material is 2%-70%, that is, the mass ratio of aluminum nitride is 30%-98%. y is 0%-100%, representing that the doped metal element can be one or more. For example, when y is 0%, the doped metal element is only X, and when y is 100%, the doped metal element is only Y.

[0064] As Figure 3 shown, the variable resistive memory provided by the present invention at least includes a wafer substrate, a bottom electrode layer 100, a seed layer 201, a resistive switching layer 202, and a top electrode layer 300;

[0065] The resistive switching layer is prepared by using the method for preparing a resistive switching layer of a variable resistive memory based on laser pulses described in any of the above embodiments.

[0066] In an exemplary embodiment, the thickness of the resistive switching layer is from 10 nanometers to 50 nanometers.

[0067] In an exemplary embodiment, the top electrode layer is obtained based on the following method:

[0068] Based on physical vapor deposition or chemical vapor deposition, a top electrode material is deposited on the resistive switching layer, and the top electrode material includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride, and tantalum nitride.

[0069] Figure 4 An exemplary structural diagram of an electronic device is shown, such as Figure 4 As shown, the electronic device may include: a processor 410, a communications interface 420, a memory 430, and a communication bus 440. Among them, the processor 410, the communications interface 420, and the memory 430 complete communication with each other based on the communication bus 440. The processor 410 may call logic instructions in the memory 430 to execute a method for preparing a resistive switching layer of a variable resistive memory based on laser pulses, and the method includes:

[0070] Depositing a buffer layer on a bottom electrode layer of a pre-prepared variable resistive memory, and the material of the buffer layer includes any one or more of tungsten, tantalum, nitrogen, and boron;

[0071] Depositing a seed layer on the buffer layer;

[0072] Based on laser pulse impact on a target, the target is deposited on the seed layer to form a resistive switching layer, and the material of the target includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride.

[0073] In addition, when the logical instructions in the above-mentioned memory 430 are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods in various embodiments of the present invention. The aforementioned storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), magnetic disks, or optical discs that can store program codes.

[0074] On the other hand, the present invention also provides a computer program product. The computer program product includes a computer program. The computer program can be stored on a non-transitory computer-readable storage medium. When the computer program is executed by a processor, the computer can execute the method for preparing a resistive change layer of a variable resistive memory based on laser pulses provided by the above-mentioned various methods. The method includes:

[0075] Depositing a buffer layer on a bottom electrode layer of a pre-prepared variable resistive memory, and the material of the buffer layer includes any one or more of tungsten, tantalum, nitrogen, and boron;

[0076] Depositing a seed layer on the buffer layer;

[0077] Based on laser pulses hitting a target material, the target material is deposited on the seed layer to form a resistive change layer, and the material of the target material includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride.

[0078] On yet another aspect, the present invention also provides a non-transitory computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, it realizes the method for preparing a resistive change layer of a variable resistive memory based on laser pulses provided by the above-mentioned various methods. The method includes:

[0079] Depositing a buffer layer on a bottom electrode layer of a pre-prepared variable resistive memory, and the material of the buffer layer includes any one or more of tungsten, tantalum, nitrogen, and boron;

[0080] Depositing a seed layer on the buffer layer;

[0081] Based on laser pulses hitting a target material, the target material is deposited on the seed layer to form a resistive change layer, and the material of the target material includes any one or more of scandium, titanium, strontium, yttrium, lanthanum, and barium and aluminum nitride.

[0082] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art can understand and implement it without creative efforts.

[0083] Based on the descriptions of the above embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus a necessary general hardware platform, and of course, it can also be based on hardware. Based on this understanding, the essence of the above technical solutions, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions for causing a computer device (which can be a personal computer, server, or network device, etc.) to execute the methods of each embodiment or some parts of the embodiments.

[0084] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of each embodiment of the present invention.

Claims

1. A method for preparing a resistive switching layer of a variable resistance memory based on laser pulses, characterized in that: include: Depositing a buffer layer on the bottom electrode layer of the pre-prepared variable resistance memory, wherein the material of the buffer layer includes any one or more of tungsten, tantalum, nitrogen and boron; depositing a seed layer on the buffer layer; Based on the laser pulse hitting the target material, the target material is deposited on the seed layer to form a resistive switching layer, and the material of the target material includes any one or more of scandium, titanium, strontium, yttrium, lanthanum and barium and aluminum nitride.

2. The method for preparing a resistive switching layer of a variable resistance memory based on laser pulse according to claim 1, characterized in that: The deposition method of the bottom electrode layer comprises: The bottom electrode material is deposited onto the wafer substrate by physical vapor deposition or chemical vapor deposition, and the bottom electrode material includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride and tantalum nitride.

3. The method for preparing a resistive switching layer of a variable resistance memory based on laser pulse according to claim 1, characterized in that: The wafer substrate is a complementary metal oxide semiconductor structure.

4. The method for preparing a resistive switching layer of a variable resistance memory based on laser pulse according to claim 1, characterized in that: The step of depositing a seed layer on the buffer layer comprises: A seed layer material is deposited onto the buffer layer based on a physical vapor deposition method, wherein the seed layer material includes any one or more of platinum, molybdenum, aluminum and ruthenium.

5. The method for preparing a resistive switching layer of a variable resistance memory based on laser pulse according to claim 1, characterized in that: The mass ratio of aluminum nitride in the material of the resistive layer is 30%-98%.

6. The method for preparing a resistive switching layer of a variable resistance memory based on laser pulse according to claim 1, characterized in that: The laser source of the laser pulse is a 248-nanometer krypton fluoride laser, the output energy of the krypton fluoride laser is 100 mJ to 500 mJ, and the output frequency is 5 Hz to 120 Hz.

7. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the program, the method for preparing a resistive layer of a variable resistance memory based on laser pulses as described in any one of claims 1 to 6 is implemented.

8. A variable resistance memory, characterized in that: At least: Wafer substrate, bottom electrode layer, seed layer, resistive switching layer and top electrode layer; The resistive switching layer is prepared by using the method for preparing a resistive switching layer of a variable resistance memory based on laser pulses as described in any one of claims 1 to 6.

9. The variable resistance memory according to claim 8, characterized in that: The thickness of the resistive switching layer is 10 nanometers to 50 nanometers.

10. The variable resistance memory according to claim 8, characterized in that: The top electrode layer is obtained based on the following method: The top electrode material is deposited on the resistive layer by physical vapor deposition or chemical vapor deposition. The top electrode material includes any one or more of tungsten, titanium, tantalum, tungsten nitride, titanium nitride and tantalum nitride.

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