Substrate processing apparatus, substrate processing method, and manufacturing apparatus

Abstract

The invention discloses a substrate processing apparatus, a substrate processing method, and a manufacturing apparatus. Specifically disclosed is an apparatus for processing a substrate, the apparatus comprising: a chamber providing a processing space; an electrode unit for generating a first plasma in the processing space, the electrode unit having a counter electrode; a coil unit located on an upper side of the processing space and configured to generate a second plasma supplied into the processing space; and a remote plasma unit for supplying the group to the processing space.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 10 - 2023 - 0194229, filed with the Korean Intellectual Property Office on December 28, 2023, the entire content of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a substrate processing apparatus, a substrate processing method, and a manufacturing apparatus. Background Art

[0004] To manufacture semiconductor devices, various processes are performed on a substrate such as a wafer, such as deposition, lithography, exposure, development, etching, ashing, cleaning, baking, and ion implantation.

[0005] Among these processes, the coating process or the deposition process is a process of forming a photoresist film on a substrate, the exposure process is a process of irradiating the photoresist film formed on the substrate through processes such as the coating process and the deposition process with light in a pattern shape to change the properties of the light - irradiated portion, and the development process is a process of forming a pattern by selectively removing the photoresist film on which the exposure process has been performed. Among them, the coating process is a process of supplying the photoresist in a liquid phase to the substrate to form a film, and the deposition process is a dry deposition process of supplying the photoresist in a gas phase to the substrate to form a film. In addition, the development process can be divided into wet and dry methods. The wet method supplies a liquid developer to the substrate, and the dry method uses plasma / groups, etc.

[0006] On the other hand, the above - mentioned coating process, deposition process, and development process are performed in different chambers. Therefore, the user needs to provide a separate chamber for each of the above processes, making the above processes inefficient.

[0007] In addition, there are two types of chambers for generating plasma: capacitively coupled plasma (CCP) type and inductively coupled plasma (ICP) type. Since the advantages of CCP - type chambers and ICP - type chambers are different, in some cases, it may be necessary to process the substrate in a CCP - type chamber and an ICP - type chamber, respectively. In this case, transferring the substrate from the CCP - type chamber to the ICP - type chamber, or transferring the substrate from the ICP - type chamber to the CCP - type chamber is time - consuming. Summary of the Invention

[0008] The present invention is dedicated to providing a substrate processing apparatus, a substrate processing method, and a manufacturing apparatus capable of effectively processing a substrate.

[0009] The present invention is also directed to providing a substrate processing apparatus, a substrate processing method, and a manufacturing apparatus that are capable of simultaneously performing a deposition process and a development process on a substrate.

[0010] The present invention is also directed to providing a substrate processing apparatus, a substrate processing method, and a manufacturing apparatus that are capable of improving development uniformity, etching rate, and anisotropic etching efficiency.

[0011] The problems to be solved by the present invention are not limited to the above problems, and those skilled in the art will clearly understand the unmentioned problems from the following description.

[0012] Exemplary embodiments of the present invention provide an apparatus for processing a substrate, the apparatus including: a chamber that provides a processing space; an electrode unit that is configured to generate a first plasma in the processing space, and the electrode unit has an opposing electrode; a coil unit that is located above the processing space, and the coil unit is configured to generate a second plasma supplied into the processing space; and a remote plasma unit that is configured to supply radicals to the processing space.

[0013] According to an exemplary embodiment, the electrode unit may include: a lower electrode unit that is configured to support a substrate in the processing space, and the lower electrode unit has a lower electrode that is one of the opposing electrodes; and an upper electrode unit that is positioned to face the lower electrode unit, and the upper electrode unit has an upper electrode that is the other of the opposing electrodes.

[0014] According to an exemplary embodiment, the upper electrode unit may include: a shower head that faces the lower electrode unit, and the shower head has a plurality of holes formed therein; a gas box that is located above the shower head, and the gas box is for providing a diffusion space in which a process gas excited by the first plasma diffuses; and an upper power supply that is a source power source and is for applying power to the shower head to generate a first plasma in the processing space.

[0015] According to an exemplary embodiment, the lower electrode unit may include a lower power supply that is a bias power supply to control the flow of the first plasma, the second plasma, or radicals to the lower electrode.

[0016] According to an exemplary embodiment, the coil unit may include: a plasma chamber located on the top side of the upper electrode unit and configured to provide a plasma excitation space communicating with the processing space; a coil disposed to surround the plasma chamber; and a coil power supply that is a source power supply and is configured to generate a second plasma in the plasma excitation space by using the coil.

[0017] According to an exemplary embodiment, the remote plasma unit may include: a gas supply channel communicating with the processing space; and a remote plasma generation unit configured to generate plasma, capture ions from the plasma, and selectively supply groups contained in the plasma into the gas supply channel.

[0018] According to an exemplary embodiment, the apparatus may further include a controller configured to control the electrode unit, the coil unit, and the remote plasma unit, wherein the controller controls the coil unit and the electrode unit to generate a first plasma and a second plasma during processing of a substrate.

[0019] According to an exemplary embodiment, the apparatus may further include: a controller configured to control the electrode unit, the coil unit, and the remote plasma unit, and the controller controls any one of the remote plasma unit, the electrode unit, and the coil unit to process the substrate by at least one of the first plasma and the second plasma and then process the substrate with groups.

[0020] According to an exemplary embodiment, the apparatus may further include: a controller configured to control the electrode unit, the coil unit, and the remote plasma unit, and the controller may control at least one of the electrode unit, the coil unit, and the remote plasma unit to selectively generate the first plasma, the second plasma, and groups according to a film removal profile required for the substrate being processed in the processing space.

[0021] According to an exemplary embodiment, the apparatus may further include: a gas supply unit configured to supply a process gas to the processing space; wherein the gas supply unit may include: a first gas supply source configured to supply an organometallic precursor and / or a reverse reactant to the processing space; and a second gas supply source configured to supply a developing chemical material and a carrier gas to the processing space.

[0022] According to an exemplary embodiment, the remote plasma unit may include a third gas supply source that supplies hydrogen gas, a halogen gas, and / or a carrier gas to the remote plasma generation unit.

[0023] Another exemplary embodiment of the present invention provides a method of processing a substrate, the method including: loading the substrate into a processing space of a chamber; and continuously processing the substrate in the processing space by using a first plasma generated in a capacitively coupled plasma (CCP) manner and a second plasma generated in an inductively coupled plasma (ICP) manner and supplied to the processing space.

[0024] According to an exemplary embodiment, the first plasma may be generated by opposed electrodes disposed opposite each other, with the substrate inserted between the opposed electrodes, and the second plasma is generated by a coil that is positioned closer to an edge region of the substrate than to a central region of the substrate when viewed from above.

[0025] According to an exemplary embodiment, after the first plasma and the second plasma process the substrate, the substrate may be further processed by supplying radicals to the processing space.

[0026] According to an exemplary embodiment, a deposition process may be performed to supply a deposition gas from the processing space to the substrate to form a film on the substrate.

[0027] According to an exemplary embodiment, a development process may be performed to remove the film formed by the deposition process by using the first plasma and the second plasma.

[0028] According to an exemplary embodiment, the film formed by the deposition gas may be formed of a material containing a photoresist.

[0029] Another exemplary embodiment of the present invention provides a manufacturing apparatus, which includes: a chamber having a processing space; a lower electrode unit configured to support a substrate in the processing space, and the lower electrode unit has a lower electrode; an upper electrode unit positioned to face the lower electrode unit, and the upper electrode unit includes an upper electrode, which is an opposing electrode of the lower electrode, and the upper electrode unit is configured to generate a first plasma in the processing space; a coil unit configured to generate a second plasma in a plasma excitation space positioned above the processing space and supply the second plasma to the processing space, and the plasma excitation space is in fluid communication with the processing space; a remote plasma unit configured to supply radicals to the processing space via the plasma excitation space; a gas supply unit configured to supply a process gas to the processing space through the plasma excitation space; and an exhaust unit configured to exhaust the processing space.

[0030] According to the exemplary embodiment, the lower electrode unit may include: a clamping electrode configured to clamp the substrate using electrostatic force; a temperature switching box configured to selectively supply a fluid at a first temperature and a fluid at a second temperature to a flow path formed in the lower electrode, and the second temperature is higher than the first temperature; and a cooler configured to supply a fluid at the first temperature or a fluid at the second temperature to the temperature switching box, and the second temperature is higher than the first temperature; and the chamber may have a heater embedded therein, the chamber may be equipped with a pressure gauge for measuring the pressure in the processing space, and the exhaust unit may further include an exhaust flow control valve for adjusting the exhaust flow rate of the processing space according to the measured value of the pressure gauge.

[0031] According to the exemplary embodiment, the manufacturing apparatus may further include: a controller, wherein the controller may control the heater such that during the processing of the substrate, the temperature of the chamber is maintained at a set temperature of 100 °C or higher, and the controller may control the temperature switching box such that during the processing of the substrate, the temperature switching box supplies a fluid at -70 °C to 90 °C to the flow path, and after the processing of the substrate is completed, the temperature switching box supplies a fluid at -30 °C to 200 °C to the flow path, and after the processing of the substrate is completed, the temperature switching box supplies a fluid at a higher temperature compared to the temperature during the processing of the substrate.

[0032] According to the exemplary embodiment of the present invention, the substrate can be effectively processed.

[0033] Furthermore, according to an exemplary embodiment of the present invention, the airflow around the substrate can be evenly discharged.

[0034] Furthermore, according to an exemplary embodiment of the present invention, the processing liquid supplied to the substrate and the fumes generated by supplying the processing liquid can be effectively recovered and discharged.

[0035] Furthermore, according to an exemplary embodiment of the present invention, even when the lifting bowl changes the liquid recovery path, the constant discharge flow rate per unit time of the airflow around the substrate can be maintained.

[0036] The effects of the present invention are not limited to the above effects, and those skilled in the art will clearly understand the effects not mentioned from this specification and the drawings. Description of the Drawings

[0037] Figure 1 is a diagram showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0038] Figure 2 is a diagram showing Figure 1 the electrode unit of the substrate processing apparatus, where the electrode unit generates plasma in the processing space.

[0039] Figure 3 is a diagram showing Figure 1 the coil unit of the substrate processing apparatus, where the coil unit supplies plasma into the processing space.

[0040] Figure 4 is a diagram showing Figure 1 the remote plasma unit of the substrate processing apparatus, where the remote plasma unit supplies radicals into the processing space.

[0041] Figure 5 is a diagram showing when Figure 1 processing the substrate with the electrode unit, the plasma density in the substrate area.

[0042] Figure 6 is a diagram showing when Figure 1 processing the substrate with the electrode unit, the plasma density in the area of the substrate when the bias power supplies power to the lower electrode.

[0043] Figure 7 is a diagram showing when Figure 1 processing the substrate with the electrode unit and then processing the substrate with the coil unit, the plasma density in the area of the substrate.

[0044] Figure 8 is a diagram showing when Figure 1 processing the substrate with the electrode unit, removing the film on the substrate.

[0045] Figure 9 is a diagram showing that after processing a substrate with the Figure 1 electrode unit, when processing the substrate with the coil unit, the film on the substrate is removed.

[0046] Figure 10 is a diagram showing a substrate processing apparatus according to another exemplary embodiment of the present invention.

[0047] After being described in detail in conjunction with the accompanying drawings, the various features and advantages of the non-limiting exemplary embodiments of this specification can be made clearer. The accompanying drawings are for reference only and should not be construed as limiting the scope of the claims. Unless explicitly stated, the drawings should not be regarded as being drawn to scale. For clarity, various dimensions in the drawings may be exaggerated. Detailed Description

[0048] Example embodiments will now be described more fully with reference to the accompanying drawings. The example embodiments are provided so that this disclosure will be thorough and will fully convey the scope to those skilled in the art. Numerous specific details (such as examples of specific components, devices, and methods) are set forth to provide a thorough understanding of the embodiments of this disclosure. It will be apparent to those skilled in the art that the example embodiments may be embodied in many different forms and that specific details should not be construed as limiting the scope of this disclosure. In some example embodiments, well-known processes, well-known device structures, and well-known technologies have not been described in detail.

[0049] The terms used herein are for the purpose of describing particular example embodiments only and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" may be intended to include the plural forms. The terms "comprises", "comprising", "including", and "having" are inclusive and thus specify the presence of the stated feature, integer, step, operation, element, and / or component, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof. Unless explicitly identified as the order of execution, the method steps, processes, and operations described herein should not be construed as necessarily being performed in the particular order discussed or illustrated. It should also be understood that additional or alternative steps may be employed.

[0050] When an element or layer is referred to as being “on another element or layer,” “engaged to another element or layer,” “connected to another element or layer,” or “coupled to another element or layer,” it can be directly on, engaged directly to, connected directly to, or coupled directly to the other element or layer, or there can be intervening elements or layers. In contrast, when an element is referred to as being “directly on another element or layer,” “directly engaged to another element or layer,” “directly connected to another element or layer,” or “directly coupled to another element or layer,” there can be no intervening elements or layers. Other words used to describe the relationship between elements should be interpreted in a like manner (e.g., “between” relative to “directly between,” “adjacent” relative to “directly adjacent,” etc.). As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0051] Although the terms “first,” “second,” “third,” etc. may be used herein to describe different elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections are not to be limited by these terms unless otherwise specified. These terms may be used only to distinguish one element, component, region, layer, and / or section from another. When used herein, terms such as “first,” “second,” and other numerical terms do not imply a sequence or order unless the context clearly dictates otherwise. Thus, a first element, first component, first region, first layer, or first section discussed below may be referred to as a second element, second component, second region, second layer, or second section without departing from the teachings of the example embodiments.

[0052] For ease of description, spatial relative terms (such as “inner,” “outer,” “beneath,” “below,” “lower,” “above,” and “upper,” etc.) may be used herein to describe the relationship of one element or feature to another (other) element or feature shown in the figures. Spatial relative terms are intended to cover different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, an element described as “below” or “beneath” another element or feature will then be oriented “above” the other element or feature. Thus, the example term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatial relative descriptors used herein are to be interpreted accordingly.

[0053] When the terms "same" or "identical" are used in the description of the exemplary embodiments, it should be understood that there may be some imprecision. Thus, when an element or value is said to be the same as another element or value, it should be understood that the element or value is the same as other elements or values within the manufacturing or operating tolerances (e.g., ±10%) of that element or value.

[0054] When the terms "about" or "substantially" are used with a numerical value, it should be understood that the associated numerical value includes the manufacturing or operating tolerances around the stated numerical value (e.g., ±10%). In addition, when the words "generally" and "substantially" are used with respect to a geometric shape, it should be understood that exact geometric precision is not required, but the dimensions of the shape are within the scope of the present disclosure.

[0055] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments belong. It should be further understood that terms, including those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0056] Hereinafter, reference will be made to Figures 1 to 10 describe in detail a substrate processing apparatus 1 according to an exemplary embodiment of the present invention.

[0057] The substrate processing apparatus 1 may be an apparatus for processing a substrate W, and the substrate W may be a wafer. The substrate processing apparatus 1 may be semiconductor manufacturing equipment, and the semiconductor manufacturing equipment can perform some of the processes required for manufacturing semiconductor devices. In addition, the substrate processing method described herein may be a semiconductor device manufacturing method for manufacturing semiconductor devices.

[0058] Figure 1 is a diagram showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0059] The substrate processing apparatus 1 may include a chamber 10, a lower electrode unit 20, an upper electrode unit 30, a coil unit 40, a gas supply unit 50, a remote plasma unit 60, an exhaust unit 70, and a controller 80. The lower electrode unit 20 and the upper electrode unit 30 may also be referred to as the electrode unit 20 and the electrode unit 30.

[0060] The chamber 10 can provide a processing space 11. In the processing space 11, the substrate W can be processed. The chamber 10 can be made of a material highly resistant to plasma generated in or supplied to the processing space 11. On one side of the chamber 10, an opening (not shown) can be formed through which the substrate W can be introduced. Through the opening, the substrate W can be loaded into or unloaded from the processing space 11. In addition, the opening can be blocked or opened by an opening / closing device, and the opening can be referred to as a door, valve, shutter, etc. In addition, the chamber 10 can be grounded.

[0061] At the bottom of the chamber 10, a discharge hole 14 can be formed. The discharge hole 14 can be connected to a discharge unit 70 described later. The discharge hole 14 can transfer the reduced pressure provided by the discharge unit 70 to the processing space 11. The process gas, plasma, and radicals supplied to the processing space 11, as well as the processing by-products generated when processing the substrate W, can be discharged to the outside of the substrate processing apparatus 1 through the discharge hole 14 and the discharge unit 70.

[0062] In addition, the chamber 10 can be equipped with a first pressure gauge 12, a second pressure gauge 13, and a heater 15.

[0063] The first pressure gauge 12 can be a pressure gauge for measuring the pressure in the processing space 11. The first pressure gauge 12 can be a vacuum capacitance pressure gauge (vacuum Baratron gauge). The first pressure gauge 120 can be a vacuum capacitance pressure gauge that measures pressure as the distance between the capacitor film electrodes changes. The first pressure gauge 12 can measure the pressure in the processing space 11 and transfer the measured pressure to the controller 80. Based on the pressure value measured by the first pressure gauge 12, the controller 80 can control the discharge flow control valve 72 of the discharge unit 70 described later.

[0064] The second pressure gauge 13 can be a pressure gauge for determining whether the pressure in the processing space 11 is equal to or greater than a set pressure or less than the set pressure. The second pressure gauge 13 can be a vacuum capacitance pressure gauge () / atmospheric pressure capacitance pressure gauge (atmospheric pressure Baratron gauge). When the pressure in the processing space 11 is equal to or greater than the set pressure, the second pressure gauge 13 determines that the processing space 11 has switched to the atmospheric pressure state, and when the pressure in the processing space 11 is less than the set pressure, the second pressure gauge determines that the processing space 11 has switched to the vacuum state. The second pressure gauge 13 can determine whether the state of the processing space 11 is atmospheric pressure or vacuum and transmit the determined result to the controller 80. The controller 80 can control the configuration of the substrate processing apparatus 1 to cause the substrate processing apparatus 1 to perform a processing process on the substrate W after the state of the processing space 11 has switched to the vacuum state.

[0065] Heater 15 can maintain the temperature of chamber 10 at a certain temperature or above. For example, controller 80 can control heater 15 such that the temperature of chamber 10 is maintained at 100 °C or above. This is to generate an evaporation atmosphere so that process by-products generated by the reaction of the halogen gas in the processing space 11 with the oxide do not adhere to the inner wall periphery of chamber 10 in the form of powder.

[0066] In addition, the temperature of chamber 10 can be kept constant at the set temperature and at a temperature of 100 °C or above. This is to maintain the temperature of chamber 10 at the set temperature, thereby preventing the impedance of chamber 10 from changing with temperature.

[0067] Heater 15 can be set as a sheath heater or a cartridge heater, etc.

[0068] Alternatively, heater 15 can include a flow path provided in the inner wall of chamber 10 and a heat exchanger (not shown), and the heat exchanger can supply a temperature-controlled fluid (for example, a temperature-controlled fluid with a temperature in the range of 100 °C to 120 °C) to the flow path formed in chamber 10 to maintain the temperature of chamber 10 at the set temperature, 100 °C or above.

[0069] The lower electrode unit 20 can support the substrate W in the processing space 11. The lower electrode unit 20 can control the flow of plasma, ions, radicals, etc. introduced to the substrate W. The lower electrode unit 20 can hold the substrate W.

[0070] The lower electrode unit 20 can include a dielectric plate 21, a clamping electrode 22, a lower electrode 23, an insulating member 25, a clamping power supply 26, a lower power supply 27, a lower matcher 28, a cooler 29a and a temperature switching box 29b. The cooler 29a and the temperature switching box 29b can also be referred to as cooler modules 29a, 29b.

[0071] The dielectric plate 21 can be made of a material including a dielectric. The dielectric plate 21 can be made of a material including ceramics. The dielectric plate 21 can be a ceramic disk.

[0072] The dielectric plate 21 can provide a support surface on which the substrate W can be supported. The dielectric plate 21 can be provided with a clamping electrode 22. The clamping electrode 22 can receive a voltage applied from a clamping power supply 26 to generate an electrostatic force. The clamping power supply 26 can apply a DC voltage to the clamping electrode 22. When the clamping power supply 26 applies a DC voltage, the clamping electrode 22 can be charged to + or -. And the substrate W can be charged to - or +, the opposite polarity of the clamping electrode 22. When the clamping electrode 22 and the substrate W are charged with opposite polarities, the clamping electrode 22 can attract the substrate W to the clamping electrode 22 by the electrostatic force, thereby clamping the substrate W. The clamping electrode 22 can be set to a unipolar type or a bipolar type.

[0073] The bottom electrode 23 can be positioned on the dielectric plate 21 and downstream of the clamping electrode 22. The lower electrode 23 can be connected to a lower power supply 27. The lower power supply 27 can apply high-frequency power to the lower electrode 23. The lower power supply 27 can apply radio-frequency power to the lower electrode 23. The lower power supply 27 can be a bias power supply placed above the substrate W on the lower electrode unit 20, and the bias power supply controls the flow of plasma, ions, radicals, etc. The lower power supply 27 can apply radio-frequency power to the lower electrode 23, and the radio-frequency power has a lower frequency than the upper power supply 35 and the coil power supply 46 described later. The lower electrode 23 can be made of a conductive material. For example, the lower electrode 23 can be made of a metal material.

[0074] In addition, a lower matcher 28 can be installed between the lower power supply 27 and the lower electrode 23 to ensure that the radio-frequency power applied by the lower power supply 27 is properly applied to the lower electrode 23. The lower matcher 28 can perform impedance matching so that the radio-frequency power applied by the lower power supply 27 can be efficiently delivered to the lower electrode 23.

[0075] The lower electrode 23 can have a flow path 24 formed therein. When viewed from above, the flow path 24 can be formed in a spiral shape over the entire area of the lower electrode 23. In the flow path 24, a cooler module 29a and a cooler module 29b can supply a fluid at a first temperature or a fluid at a second temperature, and the second temperature is higher than the first temperature.

[0076] The cooler modules 29a and 29b may include a cooler 29a and a temperature switching box 29b. The cooler 29a may adjust the temperature of a fluid (e.g., the fluid may be cooling water, a cooling gas, heating water, a heating gas, etc.) to a first temperature or a second temperature. The cooler 29a may supply the fluid having the temperature adjusted to the first temperature or the second temperature to the temperature switching box 29b. The temperature switching box 29b may allow the fluid at the first temperature or the fluid at the second temperature to be selectively supplied into the flow path 24. The first temperature may be between -70°C and 30°C, and the second temperature may be between 30°C and 90°C. Conversely, the first temperature may be 30°C to 90°C, and the second temperature may be 90°C to 200°C.

[0077] The temperature of the lower electrode 23 and the temperature of the entire support unit 20 may be adjusted by the fluid supplied to the flow path 24 via the cooler modules 29a and 29b. The fluid supplied to the flow path 24 via the cooler modules 29a and 29b may circulate through the flow path 24 and return to the cooler modules 29a and 29b.

[0078] In the case of performing a processing process on the substrate W, for example, in the case of performing a chemical vapor deposition process or an evaporation process on the substrate W, the cooler modules 29a and 29b may supply a fluid at a first temperature, which is a relatively low temperature, to the flow path 24. This is to achieve a more anisotropic photoresist performance.

[0079] After the processing process of the substrate W ends, for example, after the substrate W is removed from the processing space 11, in order to perform an idle cleaning on the support unit 20, the cooler modules 29a and 29b may supply a fluid at a second temperature, which is a relatively high temperature, to the flow path 24 so that the support unit 20 has a temperature of 100°C.

[0080] The insulating member 25 may be disposed between the chamber 10 and the lower electrode 23. The insulating member 25 may be made of an insulating material. The insulating member 25 may electrically isolate the chamber 10 from the grounded lower electrode 23.

[0081] The upper electrode unit 30 may be disposed to face the lower electrode unit 20. The upper electrode unit 30 may be disposed to face the substrate W, which is placed between the lower electrode unit 20 and the upper electrode. The upper electrode unit 30 may include a shower head 31, a gas box 32, an insulator 34, an upper power supply 35, and an upper matcher 36.

[0082] The showerhead 31 can provide a uniform supply of process gas, plasma, ions, radicals, etc. to the processing space 11. A plurality of holes 31a can be formed in the showerhead 31. The plurality of holes 31a can be uniformly formed over the entire area of the showerhead 31. The showerhead 31 can be made of a conductive material. The showerhead 31 can be an upper electrode. The showerhead 31 can be used as the counter electrode for the aforementioned lower electrode 23. The upper power supply 35 can apply high-frequency power to the showerhead 31. The upper power supply 35 can apply radio-frequency power to the showerhead 31. The upper power supply 35 can be a source power supply for generating plasma in the processing space 11. The upper power supply 35 can apply radio-frequency power to the showerhead 31 at a higher frequency than the aforementioned lower power supply 27.

[0083] In addition, an upper matcher 36 can be installed between the upper power supply 35 and the showerhead 31 to ensure that the radio-frequency power applied by the upper power supply 35 is properly applied to the showerhead 31. The upper matcher 36 can perform impedance matching so that the radio-frequency power applied by the lower power supply 27 can be efficiently delivered to the lower electrode 23.

[0084] The gas box 32 can be installed on top of the showerhead 31. The gas box 32 can form a diffusion space 33. The process gas supplied by the gas supply unit 50 described below, the radicals supplied by the remote plasma unit 60 described below, and the plasma generated by the coil unit 40 described below can be supplied to the processing space 11 through the holes 31a formed in the showerhead 31. The gas box 32 can be provided between the plasma excitation space 42 and the showerhead 31 to provide the diffusion space 33.

[0085] The aforementioned process gas, radicals, and plasma can be introduced into the diffusion space 33 and mainly diffuse in the lateral direction, and the diffused process gas, radicals, and plasma can be relatively uniformly introduced into the processing space 11 through the holes 31a formed in the showerhead 31.

[0086] In addition, the gas box 32 can be made of a conductive material. Furthermore, the gas box 32 and the showerhead 31 can be electrically connected to each other. In the above embodiment, as an example, the present invention has been described based on the case where the upper power supply 35 directly applies radio-frequency power to the showerhead 31, but the upper power supply 35 can also indirectly apply radio-frequency power to the showerhead 31 by directly applying radio-frequency power to the gas box 32.

[0087] An insulator 34 can be provided between the gas box 32 and the chamber 10. The insulator 34 can electrically isolate the gas box 32 from the grounded chamber 10. The insulator 34 can be made of an insulating material.

[0088] The above-described lower electrode unit 20 and upper electrode unit 30 can be used as opposed electrode units. As will be described later, plasma can be formed between the lower electrode unit 20 and the upper electrode unit 30. The plasma generated by the electrode units 20 and 30 in the processing space 11 is defined as the first plasma. The first plasma can be plasma generated by the electrode units 20 and 30 in a CCP manner.

[0089] The coil unit 40 can generate plasma on the upper side of the processing space 11. The coil unit 40 can generate plasma on the upper side of the processing space 11 and supply the generated plasma to the diffusion space 33. The plasma supplied to the diffusion space 33 can be supplied to the processing space 11.

[0090] The coil unit 40 can include a plasma chamber 41, a coil 43, a seal tube 44, a lead 45, a coil power supply 46, and a coil matcher 47.

[0091] The plasma chamber 41 can provide a plasma excitation space 42. When viewed from the top, the plasma excitation space 42 can have a smaller diameter than the processing space 11. The plasma chamber 41 can be set as a cylindrical chamber that provides the plasma excitation space 42. The plasma chamber 41 can be made of the same or similar material as the above-described chamber 10. The plasma chamber 41 can be grounded.

[0092] The plasma excitation space 42 can be in fluid communication with the diffusion space 33. The diffusion space 33 can be in fluid communication with the processing space 11. Therefore, the plasma excitation space 42 can be indirectly in fluid communication with the processing space 11.

[0093] The coil 43 can be configured to surround the plasma chamber 41. Depending on the shape, shape, thickness, material, etc. of the coil 43, the density of the plasma generated in the plasma excitation space 42 can be changed. The user can select any coil 43 with different shapes, geometries, thicknesses, materials, etc. to be installed in the substrate processing apparatus 1 to change the density of the plasma generated in the plasma excitation space 42.

[0094] The coil power supply can apply high-frequency power to the coil 43. The coil power supply 46 can apply radio-frequency power to the coil 43. The coil power supply 46 can be the source power supply that generates plasma in the plasma excitation space 42. The coil power supply 46 can apply radio-frequency power with a higher frequency than the above-described lower power supply 27 to the coil 43.

[0095] In addition, a coil matcher 47 can be installed between the coil 43 and the coil power supply 46 to ensure that the RF power applied by the coil power supply 46 is properly applied to the coil 43. The upper matcher 47 can perform impedance matching so that the RF power applied by the coil power supply 46 can be efficiently applied to the coil 43.

[0096] The sealed tube 44 can be disposed in the plasma chamber 41 and outside the coil 43. The sealed tube 44 can have a cylindrical shape surrounding the coil 43. The sealed tube 44 can be used as an RF sealed tube that prevents the RF field generated by the coil 43 from radiating outward from the coil 43 when RF power is applied to the coil 43.

[0097] The lead 45 can be located on the top side of the chamber 10. The lead 45 can be grounded. The lead 45 can be arranged to have a structure covering the plasma chamber 41, the coil 43, and the sealed tube 44. The lead 45 can be grounded. The lead 45 can be in contact with the chamber 10 and grounded to the chamber 10.

[0098] The coil unit 40 can generate plasma in the plasma excitation space 42. The plasma generated by the coil unit 40 in the plasma excitation space 42 is defined as the second plasma. The second plasma can be the plasma generated by the coil unit 40 in an ICP manner.

[0099] The gas supply unit 50 can supply process gas to the processing space 11. The gas supply unit 50 can include a gas supply line 51 connected to the top center of the lead 45, a first gas supply source 52 that supplies a first process gas PG1 to the gas supply line 51, and a second gas supply source 53 that supplies a second process gas PG2 to the gas supply line 51.

[0100] The first process gas PG1 and the second process gas PG2 can be pre-supplied into the plasma excitation space 42 and then sequentially supplied into the processing space 11 through the diffusion space 33 and the hole 31a.

[0101] The first process gas PG1 can include an organometallic precursor and a reverse reactant. The first process gas PG1 can be a deposition gas that can be used to deposit a photoresist film on the substrate W. The first process gas PG1 can be supplied to the processing space 11 in a gaseous form at a high temperature to improve the deposition efficiency.

[0102] The organometallic precursor can be a predetermined precursor among a variety of candidate metal-organic precursors. For example, when M is tin, the precursors include tert-butyltris(dimethylamino)tin, isobutyltris(dimethylamino)tin, n-butyltris(dimethylamino)tin, sec-butyltris(dimethylamino)tin, isopropyl(tris)dimethylamino tin, n-propyltris(diethylamino)tin, and similar alkyl(tris)(tert-butoxy)tin compounds, for example, tert-butyltris(tert-butoxy)tin. In some exemplary embodiments, the organometallic precursor can be partially fluorinated.

[0103] The reverse reactant can include water, peroxide (e.g., hydrogen peroxide), dihydroxy alcohol or polyhydroxy alcohol, fluorinated dihydroxy alcohol or fluorinated polyhydroxy alcohol, fluorinated ethylene glycol, and other sources of hydroxyl moieties.

[0104] The first process gas PG1 including the organometallic precursor and the reverse reactant can enter the processing space 11 in a gas phase and form a film (e.g., a photoresist film) on the substrate W.

[0105] The second process gas PG2 can include a developing chemical material in a gas phase and a carrier gas, and the carrier gas is an inert gas. For example, the developing chemical material can include one or more gases selected from BCl3, HBr, HCl, H2, and Cl2. The inert gas can include one or more gases selected from N2, He, Ne, Ar, Kr, Xe, and Rn.

[0106] The remote plasma unit 60 can supply radicals to the processing space 11. The remote plasma unit 60 can include a third gas supply source 61, a first gas supply channel 62, a remote plasma generation unit 63, a second gas supply channel 64, and a remote plasma valve 65.

[0107] The third gas supply source 61 can supply hydrogen gas and / or halogen gas to the remote plasma generation unit 63 via the first gas supply channel 62. In addition, the third gas supply source 61 can supply a carrier gas as an inert gas to the remote plasma generation unit 63 via the first gas supply channel 62. The inert gas can be one or more gases selected from N2, He, Ne, Ar, Kr, Xe, and Rn.

[0108] The remote plasma generation unit 63 can generate plasma by exciting the gas supplied by the third gas supply source 61 in an ICP or CCP manner. Then, the remote plasma generation unit 63 can capture ions from the generated plasma. That is, the remote plasma generation unit 63 can capture the ions among the ions and radicals contained in the plasma and selectively supply radicals to the second gas supply channel 64.

[0109] The second gas supply passage 64 may be equipped with a remote plasma valve 65, which may be an on / off valve or a flow control valve. The second gas supply passage 64 may be connected to the above-described gas supply line 51. The radicals supplied by the remote plasma generation unit 63 may be supplied to the processing space 11 via the gas supply line 51, the plasma excitation space 42, the diffusion space 33, and the holes 31a.

[0110] The discharge unit 70 may discharge the atmosphere in the processing space 11. The discharge unit 70 may evacuate the processing space 11 to discharge the process gas, plasma, and radicals supplied to the processing space 11 from the processing space 11. In addition, the discharge unit 70 may discharge process by-products generated by processing the substrate W in the processing space 11 from the processing space 11.

[0111] The discharge unit 70 may include a discharge pipe 71, a discharge flow control valve 72, and a pump 73.

[0112] The discharge pipe 71 may be connected to the above-described discharge hole 14. The discharge flow control valve 72 may be installed in the discharge pipe 71. The discharge flow control valve 72 may be a valve that regulates the discharge flow rate per unit time to the processing space 11. The discharge flow control valve 72 may be an Auto Pressure Control Valve (APCV). The discharge flow control valve 72 may be set to a symmetric type or a butterfly type. The opening and closing speed of the discharge flow control valve 72 may vary according to the pressure measurement value of the first pressure gauge 12 transmitted to the controller 80. For example, when the pressure in the first pressure gauge 12 is lower than the required pressure, the discharge flow control valve 72 may have a smaller opening and closing speed, and when the pressure in the first pressure gauge 12 is higher than the required pressure, the flow control valve 72 may have a larger opening and closing speed.

[0113] The pump 73 may provide a reduced pressure to the processing space 11 via the discharge pipe 71. The pump 73 may be a turbo pump or a dry pump. In addition, a plurality of pumps 73 may be provided such that one pump is set as a turbo pump and the other pumps are set as dry pumps. When a plurality of pumps 73 are provided, pumping may be performed by placing a turbo pump with excellent pumping performance upstream and dry pumps downstream. The exhaust gas discharged through the pump 73 may be transported to a scrubber and post-processed in the scrubber.

[0114] The controller 80 may control the configuration of the substrate processing apparatus 1. For example, the controller 80 may control at least one of the heater 15, the lower electrode unit 20, the upper electrode unit 40, the coil unit 40, the gas supply unit 50, the remote plasma unit 60, the first pressure gauge 12, the second pressure gauge 13, and the discharge unit 70.

[0115] The controller 80 may include: a process controller formed by a microprocessor (computer) that executes the control of the substrate processing apparatus 1; a user interface constituted by a keyboard on which an operator performs command input operations and the like to manage the substrate processing apparatus 1; a display for visualizing and displaying the operating status of the substrate processing apparatus 1; and a storage unit that stores a control program for executing a process performed in the substrate processing apparatus 1 under the control of the process controller, or a program (i.e., a processing recipe) for executing a process in each component according to various data and processing conditions. Further, the user interface and the storage unit may be connected to the process controller. The processing recipe may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, and may also be a portable disk (such as a CD-ROM or a DVD), or a semiconductor memory (such as a flash memory).

[0116] Next, the operation modes of the substrate processing apparatus 1 according to exemplary embodiments of the present invention will be described.

[0117] Figure 2 is a diagram showing Figure 1 the electrode unit of the substrate processing apparatus that generates plasma in the processing space.

[0118] Figure 2 FIG. shows a case where the substrate processing apparatus 1 is in the CCP mode. When the substrate processing apparatus 1 is in the CCP mode, the gas supply unit 50 may supply a process gas to the processing space 11, and the upper power supply 35 as a source power supply may apply radio frequency power to the upper electrode (shower head 31). At this time, plasma P (first plasma) is formed in the space between the counter electrodes (shower head 31 and lower electrode 23).

[0119] When the substrate processing apparatus 1 is in the CCP mode, the lower power supply 27 as a bias power supply may apply radio frequency power to the lower electrode 23 to control the flow of the plasma P above the substrate W. For example, when the lower power supply 27 applies radio frequency power to the lower electrode 23, ions or radicals contained in the plasma P may be accelerated and attracted to the substrate W.

[0120] Figure 3 is a diagram showing Figure 1 the coil unit of the substrate processing apparatus that supplies plasma to the processing space.

[0121] Figure 3Shows a situation where the substrate processing apparatus 1 is in the remote mode. When the substrate processing apparatus 1 is in the remote mode, the third gas supply source 61 supplies a process gas to the remote plasma generation unit 63, and the remote plasma generation unit 63 excites the process gas to generate plasma. Then, the remote plasma generation unit 63 can capture ions in the generated plasma to select groups. The selected groups can be supplied to the processing space 11 via the second gas supply passage 64, the gas supply line 51, the plasma excitation space 42, the diffusion space 33, and the hole 31a.

[0122] When the substrate processing apparatus 1 is in the remote mode, the lower power supply 27, which is a bias power supply, can apply radio frequency power to the lower electrode 23 as needed to control the flow of the plasma P above the substrate W. For example, when the lower power supply 27 applies radio frequency power to the lower electrode 23, the flow of the groups can be changed.

[0123] Figure 4 Is a diagram showing Figure 1 the remote plasma unit of the substrate processing apparatus that supplies groups into the processing space.

[0124] Figure 4 Shows a situation where the substrate processing apparatus 1 is in the ICP mode. When the substrate processing apparatus 1 is in the ICP mode, the gas supply unit 50 supplies a process gas to the processing space 11, and the coil power supply 46, which is a source power supply, can apply radio frequency power to the coil 43. When radio frequency power is applied to the coil 43, a radio frequency electric field is formed in the plasma excitation space 42, and the formed radio frequency electric field can excite the process gas to generate plasma P (second plasma). The plasma P generated in the plasma excitation space 42 can be supplied to the processing space 11 via the diffusion space 33 and the hole 31a.

[0125] When the substrate processing apparatus 1 is in the ICP mode, the lower power supply 27, which is a bias power supply, can apply radio frequency power to the lower electrode 23 as needed to control the flow of the plasma P above the substrate W. For example, when the lower power supply 27 applies radio frequency power to the lower electrode 23, the ions or groups contained in the plasma P can be accelerated and attracted into the substrate W.

[0126] Hereinafter, a method of processing the substrate W by using the substrate processing apparatus 1 according to an exemplary embodiment of the present invention will be described.

[0127] The substrate processing apparatus 1 can perform a deposition process and a development process on the substrate W. The deposition process can be a dry deposition process (chemical vapor deposition process). The development process can be a dry development process (vapor phase development process).

[0128] The deposition process may include: supplying a first process gas PG1 to the processing space 11 through a first gas supply source 52. The first process gas PG1 supplied by the first gas supply source 52 may be supplied to the processing space 11 in a gaseous phase. The first process gas PG1 supplied to the processing space 11 may be transported to the substrate W to form a film on the upper surface of the substrate W. The film may be formed of a material including photoresist.

[0129] In the deposition process, a remote plasma unit 60 may be used as needed to increase the deposition rate. In the case of performing the deposition process, the remote plasma unit 60 may form neutral groups and supply the generated groups into the processing space 11. The groups contribute to sufficiently activating the first process gas PG1. The groups decompose the first process gas PG1 to the maximum extent, thereby increasing the deposition rate. When plasma P is used instead of groups in the deposition process, the positive ions of the plasma P may collide with the substrate W and damage the thin film. Therefore, in the deposition process, the deposition of the photoresist film may be performed only by using the chemical reaction of the groups passing through the remote plasma unit 60.

[0130] In addition, a third gas supply source 61 may supply the first process gas PG1 to the remote plasma generation unit 63, form groups from the supplied first process gas PG1, and supply the formed groups to the processing space 11. Since the groups are in an unstable state, the groups can be easily deposited on the substrate W. This enables the deposition of the photoresist film on the substrate W.

[0131] In the development process, a development process may be performed on the photoresist film deposited in the deposition process. In one embodiment, after performing the above deposition process in the substrate processing apparatus 1, the substrate is taken out of the substrate processing apparatus 1 and exposed for exposure processing, the exposed substrate W is loaded into the substrate processing apparatus 1, and the substrate processing apparatus 1 performs a development process on the substrate W.

[0132] The development process may be performed by using the electrode unit 20 and the electrode unit 30, the coil unit 40, and the remote plasma unit 60. More specifically, a development process may be performed in which the plasma and groups generated by the electrode unit 20 and the electrode unit 30, the coil unit 40, and the remote plasma unit 60 are transported to the photoresist film formed on the substrate W to selectively remove the photoresist film.

[0133] When the electrode unit 20 and the electrode unit 30 and the coil unit 40 perform the development process by generating a first plasma and a second plasma, a second gas supply source 53 of the gas supply unit 50 may supply a second process gas PG2 including a developing chemical material and a carrier gas to the plasma excitation space 42.

[0134] In addition, when the remote plasma unit 60 performs a development process by generating radicals, a process gas including hydrogen gas, halogen gas, and carrier gas can be supplied to the remote plasma generation unit 63.

[0135] Since the substrate processing apparatus 1 is equipped with the electrode units 20 and 30, the coil unit 40, and the remote plasma unit 60, the advantages of each unit can be utilized to process the substrate W.

[0136] Figure 5 is a diagram showing Figure 1 the plasma density of the regions of the substrate when the substrate is processed by the electrode unit.

[0137] The electrode units 20 and 30 can be plasma sources that generate the first plasma of the CCP type. The process gas supplied through the gas supply unit 50 is mainly supplied to the central region of the processing space 11. Therefore, the density of the first plasma generated by the electrode units 20 and 30 is the highest in the central region of the substrate W (about 150 mm on a 300 mm wafer), and is lower in the edge region of the substrate W.

[0138] In other words, since the density of the CCP type first plasma is relatively high in the central region of the substrate W, the development rates in the central region and the edge region of the substrate W can be different.

[0139] Figure 6 is a diagram showing Figure 1 the plasma density of the regions of the substrate when the substrate is processed by the electrode unit and the bias power supplies power to the lower electrode.

[0140] Figure 6 Shows the density of the first plasma in each region of the substrate W when the lower power supply 27, which is the bias power supply, supplies RF power to the lower electrode 23 when the first plasma is generated by the electrode units 20 and 30 and a development process is performed on the substrate W. When the lower power supply 27 supplies RF power to the lower electrode 23, the energy (ionization energy) that attracts the ions contained in the first plasma to the substrate W can be higher. In the edge region of the substrate W, ions are attracted from more directions than in the central region of the substrate W. In other words, with a higher ionization energy, the density of the first plasma in the edge region of the substrate W increases relatively more compared to the increase in the density of the first plasma in the central region of the substrate W.

[0141] In other words, as Figure 6 shown, when the lower power supply 27 is further controlled independently of the upper power supply 35, the deviation in plasma density between the central region and the edge region of the substrate W is reduced. This reduces the difference in development rates in different regions of the substrate W.

[0142] Figure 7 is a diagram showing the plasma density in the area of the substrate when processing the substrate with the Figure 1 electrode unit and then processing the substrate with the coil unit.

[0143] The second plasma generated by the coil unit 40 in the plasma excitation space 42 is introduced into the processing space 11 through the diffusion space 33 and the holes 31a. The coil 43 of the coil unit 40 can be configured such that when viewed from above, the coil 43 is positioned closer to the edge region than the central region of the substrate W placed in the processing space 11. In addition, not all of the process gas supplied by the gas supply unit 50 may be excited in the plasma excitation space 42, and a part of the process gas can be introduced into the processing space 11.

[0144] Therefore, among the second plasma and the process gas introduced into the processing space 11, the second plasma and the process gas existing near the edge region of the substrate W may be further affected by the radio frequency electric field generated by the coil 43. That is, when the coil unit 40 generates the second plasma and supplies the generated second plasma to the processing space 11, the plasma density in the edge region of the substrate W is relatively higher than that of the first plasma.

[0145] Therefore, in the present invention, after performing a development process on the substrate W using the first plasma generated by the CCP type electrode units 20, 30, the development process can be further performed on the substrate W using the second plasma generated by the ICP type coil unit 40 to reduce the deviation of the development rate in each area of the substrate W. In addition, the processing of the first plasma and the second plasma can be continuously performed before loading the substrate W into the processing space 11 and before unloading the substrate W from the processing space.

[0146] Figure 8 is a diagram showing the removal of the film on the substrate when processing the substrate with the Figure 1 electrode unit. Figure 9 is a diagram showing the removal of the film on the substrate when processing the substrate with the Figure 1 electrode unit and then processing the substrate with the coil unit.

[0147] Referring to Figure 8 and Figure 9 , it can be seen that compared with the case of removing the film on the substrate W only with the electrode units 20, 30, when processing the substrate W with the electrode units 20, 30 and then further processing the substrate W with the coil unit 40, more complete anisotropy can be achieved when removing the film on the substrate W.

[0148] In addition, the ions contained in the plasma have relatively high energy. Therefore, after processing the film by plasma, the flatness of the film may deteriorate.

[0149] Therefore, after the film of the substrate W is processed by the first plasma and / or the second plasma, post-processing can be performed by the radicals generated by the remote plasma unit 60. In this case, the film flatness deteriorated by the plasma can be further improved.

[0150] In the above embodiment, the present invention is described based on the case where the substrate W is processed by the first plasma and then by the second plasma as an example, but it is not limited thereto.

[0151] Alternatively, after the substrate W is processed by the second plasma, the substrate W can be processed by the first plasma. In addition, the substrate W can be processed by only any one of the first plasma or the second plasma.

[0152] In addition, after the substrate W is processed by the first plasma, the substrate W can be processed by radicals, or after the substrate W is processed by the second plasma, the substrate W can be processed by radicals.

[0153] Whether to process the substrate W with any processing fluid among the first plasma, the second plasma, or the radicals can depend on the film removal profile required for the substrate W.

[0154] For example, when a high film removal profile of the substrate W is required in the central region of the substrate W, only the first plasma can be used to process the substrate W. When a higher film removal profile of the substrate W is required in the edge region of the substrate W, only the second plasma can be used to process the substrate W. When a uniform film removal profile of the substrate W is required in each region of the substrate W, the first plasma and the second plasma can be used to process the substrate W.

[0155] When the thickness of the film to be removed from the substrate W is small, or when the hardness of the formed film is low and damage to the film is a concern, the substrate W can be processed only by radicals.

[0156] In the above embodiment, the present invention is described based on the case where the substrate processing apparatus 1 includes the electrode unit 20, the electrode unit 30, the coil unit 40, and the remote plasma unit 60, but it is not limited thereto. For example, as Figure 10 shown, the substrate processing apparatus 1 may include only the electrode unit 20, the electrode unit 30, and the remote plasma unit 60.

[0157] Although not shown, in other exemplary embodiments, the substrate processing apparatus 1 may also include only the coil unit 40 and the remote plasma unit 60.

[0158] It should be understood that exemplary embodiments are disclosed herein and other variations are possible. The individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but are interchangeable and may be used, where applicable, in the selected embodiment even if not specifically shown or described. Modifications should not be regarded as departing from the spirit and scope of the invention, and it will be apparent to those of ordinary skill in the art that all such modifications are intended to be included within the scope of the appended claims.

Claims

1. A device for processing a substrate, the device comprising: a chamber, wherein the chamber provides a processing space; an electrode unit configured to generate a first plasma in the processing space, and the electrode unit has an opposing electrode; a coil unit located at an upper side of the processing space and configured to generate a second plasma supplied into the processing space; as well as A remote plasma unit is configured to supply radicals to the processing volume.

2. The device according to claim 1, wherein: The electrode unit comprises: a lower electrode unit configured to support a substrate in the processing space and having a lower electrode, the lower electrode being one of the counter electrodes; and An upper electrode unit is positioned to face the lower electrode unit and has an upper electrode which is the other of the opposed electrodes.

3. The device according to claim 2, wherein: The upper electrode unit comprises: a shower head facing the lower electrode unit and having a plurality of holes formed therein; a gas box located at a top side of the shower head and configured to provide a diffusion space in which a process gas excited by the first plasma diffuses; and An upper power source is a source power source, and the upper power source is used to apply power to the shower head to generate the first plasma in the processing space.

4. The device according to claim 3, wherein: The lower electrode unit includes a lower power source, which is a bias power source to control the flow of the first plasma, the second plasma, or the radicals toward the lower electrode.

5. The device according to claim 2, wherein: The coil unit comprises: a plasma chamber, the plasma chamber being located at a top side of the upper electrode unit and configured to provide a plasma excitation space communicating with the processing space; a coil disposed around the plasma chamber; and A coil power supply is a source power supply configured to generate the second plasma in the plasma excitation space using the coil.

6. The device according to claim 1, wherein: The remote plasma unit comprises: a gas supply channel communicating with the processing space; and A remote plasma generating unit is configured to generate plasma, capture ions from the plasma, and selectively supply radicals contained in the plasma to the gas supply channel.

7. The device according to claim 1, further comprising: a controller configured to control the electrode unit, the coil unit, and the remote plasma unit, The controller controls the coil unit and the electrode unit to generate the first plasma and the second plasma during processing of a substrate.

8. The device according to claim 1, further comprising: a controller configured to control the electrode unit, the coil unit, and the remote plasma unit, The controller controls any one of the remote plasma unit, the electrode unit, and the coil unit to process the substrate by at least one of the first plasma and the second plasma and then to process the substrate with the radical.

9. The device according to claim 1, further comprising: a controller configured to control the electrode unit, the coil unit, and the remote plasma unit, The controller controls at least one of the electrode unit, the coil unit, and the remote plasma unit to selectively generate the first plasma, the second plasma, and the radicals according to a film removal profile required for the substrate processed in the processing space.

10. The device according to claim 1, further comprising: a gas supply unit configured to supply process gas to the processing space; Wherein, the gas supply unit comprises: a first gas supply source configured to supply an organometallic precursor and / or a reverse reactant to the processing space; and A second gas supply source is configured to supply a developing chemical material and a carrier gas to the processing space.

11. The device according to claim 6, wherein: The remote plasma generating unit includes a third gas supply source that supplies hydrogen gas, halogen gas and / or carrier gas to the remote plasma generating unit.

12. A method for processing a substrate, the method comprising: loading a substrate into a processing space of the chamber; as well as The substrate is continuously processed in the processing space by using a first plasma generated in a capacitively coupled plasma (CCP) manner and a second plasma generated in an inductively coupled plasma (ICP) manner and supplied to the processing space.

13. The method according to claim 12, wherein: The first plasma is generated by opposing electrodes disposed opposite to each other, the substrate is inserted between the opposing electrodes, and The second plasma is generated by a coil positioned closer to an edge region of the substrate than to a center region of the substrate when viewed from above.

14. The method according to claim 13, wherein: After the first plasma and the second plasma process the substrate, the substrate is further processed by supplying radicals into the processing space.

15. The method according to claim 12, wherein: A deposition process is performed to supply a deposition gas from the process space to the substrate to form a film on the substrate.

16. The method according to claim 15, wherein: A developing process is performed to remove the film formed by the deposition process by using the first plasma and the second plasma.

17. The method according to claim 15, wherein: The film formed by the deposition gas is formed of a material including a photoresist.

18. A manufacturing device, comprising: A chamber having a processing space; a lower electrode unit configured to support a substrate in the processing space and having a lower electrode; an upper electrode unit, the upper electrode unit being positioned to face the lower electrode unit and including an upper electrode which is an opposing electrode to the lower electrode and configured to generate a first plasma in the processing space; a coil unit configured to generate a second plasma in a plasma excitation space positioned at an upper side of the processing space and supply the second plasma to the processing space, the plasma excitation space being in fluid communication with the processing space; a remote plasma unit configured to supply radicals to the processing space via the plasma excitation space; a gas supply unit configured to supply a process gas to the processing space through the plasma excitation space; as well as A discharge unit is configured to discharge the processing space.

19. The manufacturing device according to claim 18, wherein: The lower electrode unit comprises: A clamping electrode, wherein the clamping electrode is configured to clamp the substrate using an electrostatic force; a temperature switching box configured to selectively supply a fluid at a first temperature and a fluid at a second temperature having a higher temperature than the first temperature to a flow path formed in the lower electrode; and a cooler configured to supply the temperature switching box with the fluid at the first temperature or the fluid at the second temperature, the second temperature having a higher temperature than the first temperature; and The chamber has a heater embedded therein, The chamber is equipped with a pressure gauge for measuring the pressure in the processing space, and The discharge unit further includes a discharge flow control valve for adjusting a discharge flow of the processing space according to a measurement value of the pressure gauge.

20. The manufacturing device according to claim 19, further comprising: Controller, wherein the controller controls the heater so that the temperature of the chamber is maintained at a set temperature of 100° C. or higher during processing of the substrate, and The controller controls the temperature switching box so that during the processing of the substrate, the temperature switching box supplies a fluid at -70°C to 90°C to the flow path, and after the processing of the substrate is completed, the temperature switching box supplies a fluid at -30°C to 200°C to the flow path, and after the processing of the substrate is completed, the temperature switching box supplies a fluid at a higher temperature than the temperature during the processing of the substrate.

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