Semiconductor waste gas treatment device based on plasma technology

Abstract

The invention discloses a semiconductor waste gas treatment device based on a plasma technology, the device is composed of a pretreatment module, a dust removal module, a plasma reaction module and a post-treatment module, the modules are detachably connected through a cabinet body, and the flexibility and the maintenance convenience are enhanced. The pretreatment module comprises a front cylinder and a gas homogenization structure, ensures uniform distribution of waste gas, and is equipped with a sensor for monitoring concentration. The dust removal module is composed of at least two dust removers which can be connected in series, and selectivity is high. The plasma reaction module utilizes a honeycomb electrode structure and is matched with the power supply module to efficiently purify waste gas. The post-treatment module adopts a sprayer, and an overflow pipe is arranged in the post-treatment module to form an interception type water curtain, so that the waste gas is further purified. According to the design, the limitation of connection and fixation of traditional waste gas purification equipment is broken through, the equipment adaptability and maintenance convenience are improved, the problems of flexibility and maintenance in semiconductor process waste gas purification are effectively solved, and an efficient and flexible solution is provided for waste gas treatment in the semiconductor industry.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor waste gas treatment, and particularly to a semiconductor waste gas treatment device based on plasma technology. Background Art

[0002] A semiconductor refers to a material whose electrical conductivity at room temperature is between that of a conductor and an insulator. From the perspective of both technology and economic development, the importance of semiconductors is extremely great. The core units in most electronic products, such as computers, mobile phones, or digital recorders, are extremely closely related to semiconductors. During the semiconductor production process, various chemical reactions will generate a large amount of waste gas. If these waste gases are not treated up to standard, they will cause serious harm to the environment.

[0003] A plasma purifier, also known as a low-temperature plasma waste gas purifier, the principle of treating pollutants by low-temperature plasma technology is as follows: Under the action of an external electric field, a large number of energy-carrying electrons generated by dielectric discharge bombard pollutant molecules, causing them to ionize, dissociate, and excite. Then, a series of complex physical and chemical reactions are triggered, converting complex macromolecular pollutants into simple small-molecule safe substances, or converting toxic and harmful substances into non-toxic, harmless, or low-toxic and low-harm substances, so that the pollutants can be degraded and removed. Because the average energy of the electrons generated after ionization is 10ev, by appropriately controlling the reaction conditions, chemical reactions that are difficult to achieve or are very slow under normal circumstances can become very fast. Therefore, the plasma purification technology has been widely applied to fields such as tail gas waste gas purification treatment and air purification treatment.

[0004] Chinese Patent CN117357991A discloses a semiconductor production waste gas treatment process, which discloses a pre-column, a purifier, and a post-column connected in sequence. Currently, the structures of most waste gas treatment devices are similar to this, and the connection structures between devices often adopt fixed types. The connection relationship is fixed, and the overall structure of the assembled device is fixed. This makes the purification process flow fixed, with relatively insufficient flexibility and inconvenient maintenance and disassembly. Summary of the Invention

[0005] The present invention provides a semiconductor waste gas treatment device based on plasma technology, which is conducive to solving the problem that some current semiconductor process waste gas purification devices have relatively insufficient flexibility and inconvenient maintenance and disassembly due to the fixed connection relationships of each device.

[0006] The present invention is implemented as follows:

[0007] A semiconductor waste gas treatment device based on plasma technology, comprising a pretreatment module, a dust removal module, a plasma reaction module, and a post-treatment module, and each module is detachably connected through a cabinet body; the pretreatment module includes a front cylinder, the input end of the front cylinder is used to connect to an exhaust gas pipeline, a gas homogenization structure is arranged inside the front cylinder, and a sensor assembly for at least detecting the exhaust gas concentration is arranged at the output end of the front cylinder; the dust removal module includes at least two dust collectors that can work in series selectively, and the input end of the dust collector located at the front side is detachably connected to the output end of the front cylinder; the plasma reaction module includes a purifier detachably connected to the output end of the dust collector, and a plurality of plasma purification components are arranged on the air flow path of the purifier. The plasma purification component includes a plurality of first electrodes with a honeycomb-like skeleton structure, a purification channel is formed inside the first electrode, a second electrode is arranged in the purification channel, one end of the second electrode extends to the outside of the bottom of the purification channel and is connected to a bottom plate, and a plurality of uniformly distributed deceleration holes are arranged on the bottom plate. The first electrode and the second electrode are connected to a power supply module; the post-treatment module includes a sprayer, the input end of the sprayer is detachably connected to the output end of the purifier, and a plurality of overflow pipes are arranged on the air flow path inside the sprayer, and the overflow pipes can form an intercepting water curtain.

[0008] On the basis of the above technical solution, an intake partition is arranged inside the front cylinder, a plurality of uniformly distributed partition through holes are arranged on the intake partition, a gas equalizing cylinder extending downward is arranged in the partition through hole, a baffle is arranged at the bottom of the gas equalizing cylinder, and gas equalizing holes with a through hole structure are arranged on the side wall of the gas equalizing cylinder.

[0009] On the basis of the above technical solution, shunt partitions are arranged at intervals below the intake partition inside the front cylinder, a plurality of uniformly distributed shunt holes are arranged on the shunt partitions, the shunt holes penetrate through the shunt partitions, flow retardation plates are arranged at intervals below the shunt partitions, a plurality of uniformly distributed flow retardation holes are arranged on the flow retardation plates, the flow retardation holes penetrate through the flow retardation plates, and the flow retardation plates and the shunt partitions are connected through elastic tension members.

[0010] On the basis of the above technical solution, at least one of the dust collectors adopts a cyclone dust collector, and a vertical inner pipe is arranged inside it, spiral blades are arranged outside the inner pipe, and a rough surface is arranged on the inner side end surface of the inner pipe.

[0011] On the basis of the above technical solution, the gas input end of the sprayer is located near the bottom of the side wall. A vertical middle column is provided at the axial center inside the sprayer. The middle column has a middle hole structure, and the inside of the middle column is used to convey the spray liquid upward. The overflow pipe is an annular circular pipe attached to the inner wall of the sprayer. The inner side end of the circular pipe communicates with the inner cavity of the middle column through a plurality of uniformly distributed connecting pipes. A plurality of water outlet holes are opened at the bottom of the overflow pipe. A flow guiding platform is further provided at the bottom of the overflow pipe below the water outlet holes. The top of the flow guiding platform has a flow guiding curved surface that is higher outside and lower inside relative to the radial direction of the sprayer. The spray liquid overflowing from the water outlet holes of the overflow pipe can form the intercepted water curtain after flowing along the curved surface at the top of the flow guiding platform.

[0012] On the basis of the above technical solution, a sputtering platform is provided on the outer side wall of the middle column. The sputtering platforms are arranged in one-to-one correspondence with the flow guiding platforms and are arranged staggeredly below the flow guiding platforms. The top of the sputtering platform is provided with a sputtering curved surface that is higher inside and lower outside relative to the radial direction of the sprayer. The intercepted water curtain formed at the end of the flow guiding platform can fall on the sputtering curved surface and form a purification fountain after flowing on the sputtering curved surface.

[0013] On the basis of the above technical solution, the inner side end of the sputtering platform is slidably connected to the outer side wall of the middle column. A fixing block is fixedly provided on the outer side wall of the middle column above the sputtering platform. An elastic member is connected between the bottom of the fixing block and the top of the sputtering platform.

[0014] On the basis of the above technical solution, a spray partition is provided inside the sprayer above the gas input end. A plurality of second through holes with a strip-shaped through hole structure are provided on the outer side of the spray partition relative to the radial direction of the sprayer. A plurality of first through holes are uniformly distributed in the inner area of the spray partition where the second through holes are located.

[0015] Compared with the prior art, the present invention has at least the following advantages:

[0016] 1. By dividing the device into a pretreatment module, a dust removal module, a plasma reaction module and a post-treatment module, and adopting a detachable connection method for the cabinet, a highly modular design is realized. This design not only facilitates the independent maintenance and upgrade of each module, but also enables the entire waste gas treatment process to be flexibly adjusted according to actual needs, greatly improving the adaptability and flexibility of the equipment.

[0017] 2. A gas homogenization structure is provided inside the front cylinder of the pretreatment module in the present invention. Through the coordinated action of components such as the intake partition, the air homogenization cylinder and the flow buffer plate, the uniform distribution and flow rate adjustment of the waste gas are effectively realized, providing stable air flow conditions for subsequent dust removal and plasma purification, thereby improving the overall purification efficiency.

[0018] 3. In the present invention, the dust removal module employs at least two dust collectors that can be selectively connected in series for operation, with at least one being a cyclone dust collector. Its unique design enhances the dust removal effect. The selection of this diverse dust removal method enables the device to perform targeted treatment according to different exhaust gas characteristics, further improving the purification efficiency.

[0019] 4. In the plasma reaction module of the present invention, through the cooperation of the first electrode and the second electrode with a honeycomb skeleton structure, and the setting of deceleration holes, the plasma discharge process is optimized, enabling the full utilization of electron energy and effectively degrading complex macromolecular pollutants. At the same time, this design also ensures the safety and stability of the purification process.

[0020] 5. In the present invention, the overflow pipe forms an intercepting water curtain through the diversion platform, combined with the elastic diversion curved surface design of the sputtering platform, enabling the spray liquid to form a uniform water film and a diffused "purification fountain", greatly increasing the gas-liquid contact area and reaction time, and effectively capturing residual particles and soluble pollutants. The through-hole partition design on the spray baffle further optimizes the gas flow distribution, avoids gas flow short-circuiting, and improves the spray purification efficiency. Brief Description of the Drawings

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0022] Figure 1 It is a schematic diagram of the module structure of a semiconductor exhaust gas treatment device based on plasma technology in an embodiment;

[0023] Figure 2 For Figure 1 It is a schematic diagram of the structure of a semiconductor exhaust gas treatment device based on plasma technology in;

[0024] Figure 3 For Figure 2 It is a schematic diagram of the structure of the front cylinder in;

[0025] Figure 4 For Figure 3 It is a schematic diagram of the structure of the air distribution cylinder in;

[0026] Figure 5 For Figure 3 It is a partial schematic diagram of the connection structure between the flow retarder plate and the flow splitting partition in;

[0027] Figure 6 It is a schematic diagram of the internal structure of the first dust collector in 2;

[0028] Figure 7 is Figure 2 a schematic diagram of the internal structure of the purifier in

[0029] Figure 8 is Figure 7 a schematic diagram of the monomer structure of the plasma purification component in

[0030] Figure 9 is Figure 8 a partial top view structure diagram of

[0031] Figure 10 is Figure 8 a three-dimensional structure diagram of the second electrode and the bottom plate in

[0032] Figure 11 is Figure 2 a schematic diagram of the internal structure of the sprayer in

[0033] Figure 12 is Figure 11 a schematic diagram of the spray partition in

[0034] Figure 13 is Figure 11 a partial schematic diagram of the connection structure between the sputtering table and the middle column in

[0035] Labels in the figure: 100, frame; 101, first cabinet; 102, second cabinet; 103, third cabinet; 104, fourth cabinet; 200, front cylinder; 201, uniform gas inlet; 202, intake partition; 203, partition through-hole; 204, uniform gas cylinder; 2041, cylinder body; 2042, uniform gas holes; 2043, baffle; 205, shunt partition; 2051, shunt holes; 206, flow retarder plate; 2061, flow retarder holes; 207, uniform gas outlet; 208, pulling spring; 210, sensor assembly; 300, first dust collector; 301, first inlet; 302, first outlet; 303, second outlet; 304, inner tube; 305, rough surface; 306, spiral blade; 310, dust collector; 400, second dust collector; 500, purifier; 501, purification inlet; 502, purification outlet; 510, plasma purification component; 511, first electrode; 512, purification channel; 513, second electrode; 514, bottom plate; 515, deceleration hole; 600, sprayer; 601, spray inlet; 602, spray outlet; 603, middle column; 604, spray partition; 6041, first through-hole; 6042, second through-hole; 605, overflow pipe; 6051, diversion platform; 606, sputtering table; 6061, fixing block; 6062, elastic member; 607, spray rack. Specific embodiments

[0036] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts belong to the scope of protection of the present invention. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention.

[0037] In the description of the present invention, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0038] It should be noted that when an element is referred to as "fixedly provided on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to an element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are only for illustrative purposes and do not represent the only embodiments.

[0039] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0040] Combined Figure 1 and Figure 2 As shown, this embodiment discloses a semiconductor waste gas treatment device based on plasma technology. Through modular design, detachable connections between the treatment modules are realized, greatly improving the flexibility and maintenance convenience of the device. At the same time, by optimizing the internal structures of the modules, the efficiency and effect of waste gas treatment are enhanced.

[0041] Specifically, as Figure 1 shown, the device specifically includes a pretreatment module, a dust removal module, a plasma reaction module, and a post-treatment module. Each module is detachably connected to the cabinet (realized by the method of bolt tightening), facilitating flexible combination and adjustment according to actual needs. Each cabinet together constitutes the frame 100. The cabinet adopts a stainless steel frame, and the bottom of the module is provided with a slide rail and a positioning pin for quick installation and alignment.

[0042] The pretreatment module is the first step in waste gas treatment. Its main function is to preliminarily treat and homogenize the waste gas entering the device to ensure the efficient progress of subsequent treatment steps. Combined with Figure 2 , the pretreatment module includes a pre - cylinder 200 disposed inside the first cabinet 101. The input end of the pre - cylinder 200 is located at the left - top of it, specifically the gas - equalizing inlet 201. The gas - equalizing inlet 201 extends to the outside of the first cabinet 101 and is used to connect the waste gas pipeline so as to introduce the waste gas generated in the semiconductor production process into the device. A gas - equalizing outlet 207 is provided at the bottom of the pre - cylinder 200, and the gas - equalizing outlet 207 is connected to the sensor assembly 210 through a pipeline.

[0043] Furthermore, a gas homogenization structure is provided inside the pre - cylinder 200. This structure is composed of an intake partition 202, a gas - equalizing cylinder 204, a shunt partition 205, and a flow - retardation plate 206. Specifically, a number of uniformly distributed partition through - holes 203 are provided on the intake partition 202, and a downward - extending gas - equalizing cylinder 204 is arranged inside the partition through - holes 203. The gas - equalizing cylinder 204 includes a cylinder body 2041 of the main body structure. A baffle 2043 is provided at the bottom of the cylinder body 2041 to prevent the waste gas from directly impacting the rear - side structure. Gas - equalizing holes 2042 (with a hole diameter of 1 - 3 mm and arranged in a honeycomb pattern) are provided on the side wall of the gas - equalizing cylinder 204. Its structure is as Figure 4 shown. The waste gas is evenly distributed inside the pre - cylinder 200 through the gas - equalizing holes 2042. This design can effectively reduce the vortex and turbulence phenomena in the waste gas and improve the uniformity and stability of the waste gas. In this embodiment, the gas - equalizing cylinder 204 is fixed to the intake partition 202 by welding. In other embodiments, a threaded locking structure can also be used to achieve the convenient disassembly and assembly of the gas - equalizing cylinder 204, so as to realize the replacement of the gas - equalizing cylinder 204 with different specifications according to actual needs.

[0044] The shunt partition 205 is arranged below the intake partition 202 at an interval of 50 - 100 mm. A number of uniformly distributed shunt holes 2051 are provided on the shunt partition 205. The diameter of the shunt holes 2051 is 5 - 8 mm, and the hole pitch is 2 - 3 times the hole diameter. The design of the shunt holes 2051 can further evenly distribute the waste gas to different regions inside the pre - cylinder 200 and reduce the vortex and turbulence phenomena.

[0045] Combined with Figure 5 shown, the flow - retardation plate 206 is arranged at an interval below the shunt partition 205. A number of uniformly distributed flow - retardation holes 2061 are provided on the flow - retardation plate 206. The diameter of the flow - retardation holes 2061 is smaller than the diameter of the shunt holes 2051. The design of the flow - retardation holes 2061 can slow down the flow rate of the waste gas, so that the waste gas can be more fully homogenized and stabilized inside the pre - cylinder 200.

[0046] The slow-flow plate 206 and the flow-dividing partition plate 205 are connected by an elastic pulling member. Specifically, a pulling spring 208 is adopted. The telescopic direction of the pulling spring 208 is vertically arranged, and its upper and lower ends are fixedly connected to the flow-dividing partition plate 205 and the slow-flow plate 206 respectively. This design can ensure that the distance between the slow-flow plate 206 and the flow-dividing partition plate 205 can be adaptively adjusted under the fluctuation of the air flow velocity. For example, when the wind speed is higher than the threshold, the slow-flow plate 206 forms a flow-blocking structure, and the air flow pushes the slow-flow plate 206 downward and stretches the pulling spring 208. That is to say, when the wind speed is too fast, the slow-flow plate 206 can play a role in reducing the speed, avoiding the influence of too fast air flow speed on the subsequent detection results.

[0047] A sensor assembly 210 for at least detecting the concentration of waste gas is provided at the output end of the front cylinder 200. In this embodiment, the sensor assembly 210 specifically includes a concentration sensor and a flow rate sensor. Among them, the concentration sensor adopts an in-situ laser gas analyzer (TDLAS), tunable diode laser absorption spectroscopy technology, measures the gas absorption rate by laser with a specific wavelength penetrating the pipeline, and adopts a through-type installation, with the transmitting end and the receiving end located on both sides of the pipeline. In other embodiments, technologies such as an inserted electrochemical sensor array and a micro mass spectrometry probe (MEMS-QMS) can also be adopted; the flow rate sensor in this embodiment adopts a thermal mass flowmeter (inserted type), and its principle is to measure the corresponding relationship between the temperature difference between the upstream and downstream of the heating element and the flow rate. In other embodiments, technologies such as an ultrasonic time-difference flowmeter and a Coriolis mass flowmeter can also be adopted. The above sensor detection technologies are all prior arts, and their specific structures and working principles will not be elaborated here. Those skilled in the art can select and implement from the prior arts according to the actual operation situation.

[0048] The sensor assembly 210 can monitor the concentration and flow rate changes of the waste gas in real time, providing accurate data support for the subsequent dust removal and plasma purification steps.

[0049] The dust removal module is one of the key steps in waste gas treatment, and its main function is to remove particulate matter and suspended matter in the waste gas. As Figure 2 shown, the dust removal module in this embodiment includes two dust collectors that can be selectively connected in series, specifically, a first dust collector 300 and a second dust collector 400 provided inside the second cabinet 102. The first dust collector 300 is located in front of the second dust collector 400. The input end of the first dust collector 300 located in the front is detachably connected to the output end of the front cylinder 200 (through structures such as bolts and flange plates). This design enables the dust removal module to be flexibly adjusted according to different waste gas characteristics and treatment requirements.

[0050] Further, in combination with Figure 6, the first dust collector 300 adopts a cyclone dust collector, which is internally provided with a vertical inner pipe 304. A spiral blade 306 is arranged outside the inner pipe 304, and a rough surface 305 is arranged on the inner end face of the inner pipe 304. The first inlet 301 of the first dust collector 300 is located at the top of the outer wall of the first dust collector 300. The first inlet 301 is connected to the pipeline at the output end of the pre - cylinder 200, so that the gas output from the pre - cylinder 200 can enter the interior of the first dust collector 300 (outside the inner pipe 304). A first outlet 302 is arranged at the bottom of the first dust collector 300, and the first outlet 302 is used for the downward discharge of particulate matter. The bottom of the first outlet 302 is connected to a dust collector 310 through a pipeline. After the gas enters the interior of the first dust collector 300, it will be guided by the spiral blade 306 and spiral downward. When the wind speed is in an appropriate range, the particulate matter mixed in the gas will fall due to its own gravity or be adsorbed on the inner wall of the first dust collector 300 after rotational centrifugation. Subsequently, the gas enters the inner side of the inner pipe 304 from the bottom opening of the inner pipe 304 and ascends, and is discharged from the second outlet 303 at the top of the inner pipe 304. In this process, the first dust removal process is completed. At the same time, a rough surface 305 is arranged on the inner end face of the inner pipe 304, which can further enhance the adhesion effect of particulate matter and improve the dust removal efficiency.

[0051] Furthermore, as shown in Figure 2 , the second dust collector 400 is a wet dust collector arranged on one side of the first dust collector 300. The pipeline connected to the second outlet 303 is not only connected to the intake end of the second dust collector 400, but also connected to the outlet end of the second dust collector 400 (through structures such as bolts and flange plates), as specifically shown in Figure 2 . And electromagnetic valves and check valves are arranged on the pipeline connected to the second outlet 303, which are used to control the opening state of the pipeline, and can realize the control of the series connection state of the second dust collector 400 and the first dust collector 300. Its control instructions are automatically associated according to the detection structure of the sensor assembly 210. If the air flow is too fast or the concentration is too high, the first dust collector 300 and the second dust collector 400 are controlled to work in series. The dust removal of the waste gas needs to pass through the first dust collector 300 and the second dust collector 400 successively, which is conducive to carrying out more accurate and reliable dust removal treatment according to the actual gas situation.

[0052] The plasma reaction module is the core part of waste gas treatment, and its main function is to use low - temperature plasma technology to convert toxic and harmful substances in the waste gas into non - toxic, harmless or low - toxic and low - harmful substances. In this embodiment, as shown in Figures 7 - 10 , the plasma reaction module includes a purifier 500 detachably connected to the output end of the dust collector (through structures such as bolts and flange plates). As shown in Figure 2, The purifier 500 is arranged inside the third cabinet 103. The top of the purifier 500 is provided with an essence inlet. The outer end of the purification inlet 501 is communicated with the output end of the dust remover. The bottom of the purifier 500 is provided with an essence outlet. A purification air flow path is formed between the essence inlet and the purification outlet 502. The purifier 500 is provided with 2 plasma purification components 510 which are distributed at intervals up and down on the air flow path.

[0053] The plasma purification component includes a number of first electrodes 511 with a honeycomb skeleton structure. A purification channel 512 is formed inside the first electrode 511. A second electrode 513 is arranged inside the purification channel 512. One end of the second electrode 513 extends to the outside of the bottom of the purification channel 512 and is connected with a bottom plate 514. A number of uniformly distributed deceleration holes 515 are arranged on the bottom plate 514. The first electrode 511 and the second electrode 513 are connected with a power supply module to form a plasma discharge environment. When the waste gas enters the plasma purification component 510, under the action of the electric field, a large number of energy-carrying electrons generated by dielectric discharge bombard the waste gas molecules, triggering a series of complex physical and chemical reactions. These reactions degrade the toxic and harmful substances in the waste gas into simple small molecule safe substances, or convert the toxic substances into non-toxic and harmless substances. At the same time, the design of the deceleration holes 515 can slow down the flow rate of the waste gas and extend the residence time of the waste gas in the plasma environment, thereby improving the purification efficiency. Specifically, the first electrode 511 adopts a honeycomb ceramic skeleton (pore diameter 5-10 mm, wall thickness 1-2 mm), and the surface is coated with a titanium dioxide catalyst to form a multi-channel purification path; the second electrode 513 is a rod-shaped metal electrode (the material is stainless steel or titanium alloy), which penetrates the purification channel. The deceleration holes reduce the gas flow velocity through local resistance and extend the residence time of the waste gas in the ionization region. The power supply module outputs a high-frequency pulsed voltage (frequency 10-50 kHz, voltage 10-30 kV), forming a strong electric field between the first electrode and the second electrode to excite dielectric discharge to generate plasma.

[0054] During operation, the output voltage and frequency are dynamically adjusted according to the waste gas concentration feedback by the sensor. When the concentration is high, the power is increased to enhance the ionization intensity. When the concentration is low, it enters the energy-saving mode; or single plasma component operation or two plasma components operate simultaneously according to the actual waste gas situation.

[0055] In other embodiments, an electromagnetic device can also be set up to offset the plasma to the target area by using a specific electromagnetic field, realizing controllable purification area, being able to be far away from the electrode, so that the purification reaction area of the waste gas can be far away from the electrode, playing the role of protecting the electrode.

[0056] The post-treatment module is the last step of waste gas treatment, and its main function is to further remove the residual pollutants in the waste gas and ensure that the waste gas meets the discharge standards. In this embodiment, combined with Figure 2, the post - processing module includes a sprayer 600 disposed in the fourth cabinet 104, and further in combination with Figures 11 to 13 As shown, the input end of the sprayer 600 is detachably connected to the output end of the purifier 500 (through structures such as bolts and flange plates). Inside the sprayer 600, there are 2 longitudinally spaced overflow pipes 605 arranged on the air flow path, and the overflow pipes 605 can form an intercepting water curtain. When the waste gas enters the sprayer 600, it fully contacts the waste gas through the intercepting water curtain formed by the overflow pipes 605, and further removes the residual pollutants in the waste gas by means of the adsorption, dissolution, and chemical reaction of water. At the same time, the intercepting effect of the water curtain can also effectively prevent the escape of fine particles and improve the purification effect.

[0057] Furthermore, the gas input end of the sprayer 600 is a spray inlet 601 located near the bottom of the side wall, and the gas output end of the sprayer 600 is a spray outlet 602 located at the top of the sprayer 600. Inside the sprayer 600, there is a vertical middle column 603 at the axial center. The middle column 603 has a hollow structure, and the inside of the middle column 603 is used to convey the spray liquid upward (such as NaOH solution or clear water). The overflow pipe 605 is an annular circular pipe attached to the inner wall of the sprayer 600. The inner end of the circular pipe is communicated with the inner cavity of the middle column 603 through a number of uniformly distributed connecting pipes. The bottom of the overflow pipe 605 is provided with a number of water outlet holes (not shown in the figure). At the bottom of the water outlet holes of the overflow pipe 605, there is also a guiding platform 6051. The top of the guiding platform 6051 has a guiding curved surface that is higher on the outer side and lower on the inner side relative to the radial direction of the sprayer 600. The spray liquid overflowing from the water outlet holes of the overflow pipe 605 can form the intercepting water curtain after flowing along the curved surface at the top of the guiding platform 6051.

[0058] Furthermore, a sputtering platform 606 is arranged on the outer side wall of the middle column 603. The sputtering platform 606 corresponds to the guiding platform 6051 one by one and is arranged offset below the guiding platform 6051. The top of the sputtering platform 606 has a sputtering curved surface that is higher on the inner side and lower on the outer side relative to the radial direction of the sprayer 600. The intercepting water curtain formed at the end of the guiding platform 6051 can fall on the sputtering curved surface and form a purification fountain after flowing on the sputtering curved surface. This design can not only enhance the contact area and contact time between water and waste gas, but also improve the purification efficiency and quality of waste gas.

[0059] As Figure 13As shown in the figure, in order to improve the docking flexibility of the sputtering table 606 with the intercepting water curtain, the inner end of the sputtering table 606 is slidably connected to the outer wall of the middle column 603. A fixing block 6061 is fixedly provided on the outer wall of the middle column 603 above the sputtering table 606. The bottom of the fixing block 6061 is connected to the top of the sputtering table 606 through an elastic member 6062. In this embodiment, the elastic member 6062 is specifically a rubber sleeve sleeved on the middle column 603, and its top is firmly connected to the fixing block 6061. The outer side of the rubber sleeve is coated with an anti-corrosion material to extend its service life. In other embodiments, an elastic member 6062 such as a spring can also be used. The purpose is to realize the lifting movement of the sputtering table 606 to cope with the impact force generated by the intercepting water curtain with different flow rates, and then achieve a more reasonable sputtering effect.

[0060] Inside the sprayer 600, a spray partition 604 is provided above the gas input end, which is used to further evenly distribute the waste gas and slow down the flow rate of the waste gas. A plurality of second through holes 6042 with a strip-shaped through hole structure are provided on the relatively radially outer side of the spray partition 604 with respect to the sprayer 600. A plurality of first through holes 6041 are evenly distributed in the inner area of the spray partition 604 where the second through holes 6042 are located. During actual operation, the first through holes 6041 are used for the upward penetration of the gas in the inner area, and can further homogenize and mix before spraying. The second through holes 6042 are mainly used for the downward discharge of the upper spray liquid to avoid the phenomenon of excessive liquid accumulation. It should be noted that a water storage tank (not shown in the figure) is provided at the bottom of the sprayer 600, and a drain pipe is configured to drain the accumulated water in time.

[0061] Furthermore, in order to further improve the spraying effect, a spray rack 607 is also provided between the two overflow pipes 605. The spray rack 607 is also connected to the middle column 603 through a connecting pipe. The output end of the spray rack 607 is provided with a plurality of atomizing nozzles for atomizing and outputting the spray liquid to perform atomizing spraying treatment on the gas passing through this area.

[0062] Through modular design, detachable connection and structural optimization, the present invention constructs an efficient and flexible semiconductor waste gas treatment device, which can adapt to complex and changeable waste gas components and working conditions requirements, and at the same time reduce the maintenance cost. The coordinated work of each module ensures the efficient treatment of the whole process from pretreatment to deep purification, providing reliable technical support for the green production of the semiconductor industry.

[0063] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A semiconductor waste gas treatment device based on plasma technology, characterized in that, It includes a pretreatment module, a dust removal module, a plasma reaction module, and a post-treatment module. Each module is detachably connected through a cabinet body; the pretreatment module includes a front cylinder, the input end of the front cylinder is used to connect to an exhaust gas pipeline, a gas homogenization structure is provided inside the front cylinder, and a sensor assembly for at least detecting the exhaust gas concentration is provided at the output end of the front cylinder; the dust removal module includes at least two dust collectors that can work in series selectively, and the input end of the dust collector located at the front side is detachably connected to the output end of the front cylinder; the plasma reaction module includes a purifier detachably connected to the output end of the dust collector, and several plasma purification components are provided on the air flow path of the purifier. The plasma purification component includes several first electrodes with a honeycomb-like skeleton structure, a purification channel is formed inside the first electrode, a second electrode is arranged in the purification channel, one end of the second electrode extends to the outside of the bottom of the purification channel and is connected to a bottom plate, and several uniformly distributed deceleration holes are provided on the bottom plate. The first electrode and the second electrode are connected to a power supply module; the post-treatment module includes a sprayer, the input end of the sprayer is detachably connected to the output end of the purifier, and several overflow pipes are arranged on the air flow path inside the sprayer, and the overflow pipes can form an intercepting water curtain.

2. The semiconductor waste gas treatment device based on plasma technology according to claim 1, wherein, An intake partition is provided inside the front cylinder, several uniformly distributed partition through holes are provided on the intake partition, a gas equalizing cylinder extending downward is arranged in the partition through hole, a baffle is provided at the bottom of the gas equalizing cylinder, and uniformly distributed gas equalizing holes with a through hole structure are provided on the side wall of the gas equalizing cylinder.

3. A semiconductor waste gas treatment device based on plasma technology according to claim 2, characterized in that, Shunt partitions are arranged at intervals below the intake partition inside the front cylinder, several uniformly distributed shunt holes are provided on the shunt partitions, the shunt holes penetrate the shunt partitions, buffer plates are arranged at intervals below the shunt partitions, several uniformly distributed buffer holes are provided on the buffer plates, the buffer holes penetrate the buffer plates, and the buffer plates and the shunt partitions are connected by elastic pulling members.

4. A semiconductor waste gas treatment device based on plasma technology according to claim 1, characterized in that, At least one of the dust collectors is a cyclone dust collector, and a vertical inner pipe is provided inside it, spiral blades are provided outside the inner pipe, and a rough surface is provided on the inner side end surface of the inner pipe.

5. A semiconductor waste gas treatment device based on plasma technology according to claim 1, characterized in that, The gas input end of the sprayer is located near the bottom of the side wall. A vertical middle column is provided at the axial center inside the sprayer. The middle column has a middle hole structure, and the inside of the middle column is used to convey the spray liquid upward. The overflow pipe is an annular circular pipe attached to the inner wall of the sprayer. The inner side end of the circular pipe is communicated with the inner cavity of the middle column through several uniformly distributed connecting pipes. Several water outlet holes are opened at the bottom of the overflow pipe. A guide platform is also provided at the bottom of the overflow pipe where the water outlet holes are located. The top of the guide platform has a guide curved surface that is higher outside and lower inside relative to the radial direction of the sprayer. The spray liquid overflowing from the water outlet holes of the overflow pipe can form the intercepting water curtain after flowing along the curved surface at the top of the guide platform.

6. The semiconductor waste gas treatment device based on plasma technology according to claim 5, characterized in that, A sputtering platform is provided on the outer side wall of the middle column. The sputtering platform corresponds to the guide platform one by one and is arranged offset below the guide platform. The top of the sputtering platform has a sputtering curved surface that is higher inside and lower outside relative to the radial direction of the sprayer. The intercepting water curtain formed at the end of the guide platform can fall on the sputtering curved surface and form a purification fountain after flowing on the sputtering curved surface.

7. A semiconductor waste gas treatment device based on plasma technology according to claim 6, characterized in that, The inner side end of the sputtering platform is slidably connected to the outer side wall of the middle column. A fixing block is fixedly provided on the outer side wall of the middle column above the sputtering platform, and an elastic member is connected between the bottom of the fixing block and the top of the sputtering platform.

8. A semiconductor waste gas treatment device based on plasma technology according to claim 5, characterized in that, Above the gas input end inside the said sprayer, there is a spray partition board. On the radially outer side of the spray partition board relative to the sprayer, there are several second through holes with a strip-shaped through hole structure, and several first through holes are evenly distributed in the inner area of the spray partition board where the second through holes are located.

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