Chip implantable temperature measuring cable outer sheath material and preparation method and application thereof

Abstract

The invention relates to an outer sheath material of a chip implantable temperature measuring cable as well as a preparation method and application of the outer sheath material of the chip implantable temperature measuring cable, and the preparation method of the outer sheath material of the chip implantable temperature measuring cable comprises the following steps: carrying out melt blending on high-density polyethylene, a modifier, a boron nitride nanosheet and a functional additive, obtaining the outer sheath material of the chip implantable temperature measuring cable; the preparation method of the modifier comprises the following steps: (1) carrying out fluorination treatment on a multi-walled carbon nanotube, mixing the obtained fluorinated multi-walled carbon nanotube with an organic solvent, a metal source and an organic ligand, and carrying out a first reaction to obtain an intermediate; and (2) mixing PE-g-MA, an organic solvent and the intermediate obtained in the step (1), and carrying out a second reaction to obtain the modifier. The outer sheath material is modified, so that the outer sheath material is endowed with excellent waterproof and moisture-proof performance, mechanical property and low dielectric constant, and a chip implanted in the cable can transmit signals conveniently.

Description

Technical Field

[0001] The present invention relates to the technical field of cable materials, and particularly relates to an outer sheath material for a chip-implanted temperature-measuring cable, a preparation method thereof, and an application thereof. Background Art

[0002] Power cables play an important role in the power supply network. With the continuous development of the power system, the requirements for the reliability and safety of power transmission and distribution equipment are getting higher and higher. The temperature of the cable is one of the important indicators for measuring the operating conditions of power equipment. If it operates at a high temperature for a long time, it will accelerate the aging of the cable insulation layer, increase the fire hazard, and even lead to the failure of the power system.

[0003] Traditional manual inspection and regular maintenance methods cannot grasp the temperature change of the cable in real time. Therefore, establishing an on-line cable temperature monitoring system, producing temperature-measuring cables, and realizing real-time temperature monitoring and early warning functions have become necessary means to ensure the safe and stable operation of the power system.

[0004] CN221077869U discloses an induction chip temperature-measuring and positioning medium-voltage power cable, which includes a temperature-measuring and communication unit arranged at the center of the cable and a plurality of conductor layers surrounding the temperature-measuring and communication unit and arranged inside the inner liner layer. The temperature-measuring and communication unit includes a plurality of temperature-measuring and positioning chips and temperature sensors. A co-extrusion layer and a metal shielding layer are sequentially arranged outside the conductor layer. The induction chip temperature-measuring and positioning medium-voltage power cable detects the temperatures of high-voltage busbar joints, high-voltage cable joints, and high-voltage switch contacts through temperature sensors. Staff can remotely send a reading instruction to the temperature-measuring and positioning chips to obtain corresponding temperature data and positioning data. CN220137981U discloses a pluggable armored digital chip temperature-measuring cable, which includes an armored protective sleeve, a tapered flange head, a digital chip temperature-measuring cable, and a temperature inspection instrument; one end of the armored protective sleeve is connected to the tapered flange head and the other end is closed; the digital chip temperature-measuring cable is installed inside the armored protective sleeve, and a signal line is led out from the tapered flange head end of the armored protective sleeve to be connected to the temperature inspection instrument. However, the above-disclosed temperature-measuring cables do not consider the protection of the chips and the requirements for data transmission. If the existing sheath materials are used to produce chip-implanted temperature-measuring cables, the sheath materials will affect signal transmission due to problems such as poor electromagnetic compatibility and insufficient waterproof and moisture-proof performance. Summary of the Invention

[0005] Aiming at the deficiencies of the existing technology, the purpose of the present invention is to provide an outer sheath material for a chip-implanted temperature-measuring cable, a preparation method thereof, and an application thereof. By modifying the outer sheath material, the outer sheath material is given excellent waterproof and moisture-proof performance, mechanical properties, low dielectric constant, and loss factor, which is convenient for the chips implanted in the cable to transmit signals, and reduces signal attenuation and delay.

[0006] To achieve the object of the present invention, the following technical solutions are adopted in the present invention:

[0007] In a first aspect, the present invention provides a preparation method of an outer sheath material for a chip-implanted temperature-measuring cable, and the preparation method includes the following steps:

[0008] Melting and blending high-density polyethylene, a modifier, boron nitride nanosheets and a functional auxiliary agent to obtain the outer sheath material for the chip-implanted temperature-measuring cable; the preparation method of the modifier includes:

[0009] (1) Fluorinating multi-walled carbon nanotubes, mixing the obtained fluorinated multi-walled carbon nanotubes with an organic solvent, a metal source and an organic ligand, and then carrying out a first reaction to obtain an intermediate;

[0010] (2) Mixing PE-g-MA, an organic solvent and the intermediate obtained in step (1), and then carrying out a second reaction to obtain the modifier.

[0011] In the preparation method provided by the present invention, high-density polyethylene is used as a base material, and a modifier is added to prepare the outer sheath material for the chip-implanted temperature-measuring cable. Among them, in the preparation of the modifier, first, multi-walled carbon nanotubes are fluorinated to form C-F bonds on the surface of the multi-walled carbon nanotubes. The strong electronegativity of the generated C-F bonds inhibits electronic polarization and reduces the dielectric constant. Then, a porous crystal material is in-situ grown on the surface of the fluorinated multi-walled carbon nanotubes by using a metal source and an organic ligand. The porous crystal material adsorbs trace amounts of water vapor, which can avoid dielectric loss caused by moisture. Finally, the amino group on the intermediate condenses with the carboxyl group of PE-g-MA to obtain the modifier. In the obtained modifier, the multi-walled carbon nanotubes can effectively improve the mechanical properties of the material, and the fluorinated layer obtained by fluorinating the multi-walled carbon nanotubes can block the leakage current path; while the porous crystal material deposited on the surface of the fluorinated multi-walled carbon nanotubes can inhibit interfacial polarization. Using the obtained modifier in the outer sheath material for the chip-implanted temperature-measuring cable can endow it with good mechanical properties, and at the same time has a low dielectric constant and loss factor, good electromagnetic wave permeability, effectively reduces signal attenuation and delay when the chip transmits signals, and improves the high-frequency signal penetration.

[0012] Preferably, based on the total mass percentage content of 100 wt%, the raw materials for the melting and blending include: 66-83 wt% of high-density polyethylene, 5-15 wt% of the modifier, 2-4 wt% of boron nitride nanosheets, and 10-15 wt% of the functional auxiliary agent.

[0013] The mass percentage content of high-density polyethylene in the raw materials for the melting and blending is 66-83 wt%. For example, it can be 66 wt%, 70 wt%, 75 wt%, 80 wt% or 83 wt%, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0014] The mass percentage content of the modifier in the raw materials for melt blending is 5-15 wt%, for example, it can be 5 wt%, 8 wt%, 10 wt%, 12 wt% or 15 wt%, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0015] The mass percentage content of boron nitride nanosheets in the raw materials for melt blending is 2-4 wt%, for example, it can be 2 wt%, 2.5 wt%, 3 wt%, 3.5 wt% or 4 wt%, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0016] The mass percentage content of the functional additive in the raw materials for melt blending is 10-15 wt%, for example, it can be 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 or 15 wt%, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0017] Preferably, the functional additive includes an antioxidant, an ultraviolet absorber, a lubricant and a flame retardant with a mass ratio of (0.5-1):(0.3-0.5):(0.5-1):(10-15), for example, it can be 0.5:0.3:0.5:15, 0.8:0.4:0.8:13 or 1:0.5:1:10, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0018] Preferably, the antioxidant includes antioxidant 1010.

[0019] Preferably, the ultraviolet absorber includes ultraviolet absorber UV-531.

[0020] Preferably, the lubricant includes zinc stearate.

[0021] Preferably, the flame retardant includes nano-aluminum hydroxide.

[0022] Preferably, the fluorination treatment in step (1) is carried out in a plasma reactor.

[0023] Preferably, CF4 is introduced in the fluorination treatment in step (1).

[0024] Preferably, the power of the fluorination treatment in step (1) is 100-200 W, and the pressure is 8-12 Pa.

[0025] The power of the fluorination treatment is 100-200 W, for example, it can be 100 W, 120 W, 150 W, 180 W or 200 W, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0026] The pressure of the fluorination treatment is 8 - 12 Pa. For example, it can be 8 Pa, 9 Pa, 10 Pa, 11 Pa, or 12 Pa, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.

[0027] Preferably, the time of the fluorination treatment in step (1) is 15 - 30 min. For example, it can be 15 min, 20 min, 25 min, 28 min, or 30 min, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.

[0028] Preferably, the dosage ratio of the fluorinated multi - walled carbon nanotubes, organic solvent, metal source, and organic ligand in step (1) is 10 g:(100 - 200) mL:(4 - 8) g:(2.5 - 5) g. For example, it can be 10 g:150 mL:4 g:4 g, 10 g:100 mL:6 g:2.5 g, or 10 g:200 mL:8 g:5 g, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.

[0029] Preferably, the organic solvent in step (1) includes N,N - dimethylformamide.

[0030] Preferably, the metal source in step (1) includes ZrCl4.

[0031] Preferably, the organic ligand in step (1) includes 2 - aminoterephthalic acid.

[0032] Preferably, after the fluorinated multi - walled carbon nanotubes are uniformly dispersed in the organic solvent, the metal source and the organic ligand are added.

[0033] Preferably, the temperature of the first reaction in step (1) is 110 - 120 °C, and the time is 12 - 15 h.

[0034] The temperature of the first reaction is 110 - 120 °C. For example, it can be 110 °C, 112 °C, 115 °C, 118 °C, or 120 °C, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.

[0035] The time of the first reaction is 12 - 15 h. For example, it can be 12 h, 13 h, 14 h, or 15 h, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.

[0036] Preferably, after the first reaction in step (1), there are also steps of washing and drying.

[0037] Preferably, the dosage ratio of the PE-g-MA, organic solvent and intermediate in step (2) is (1-2) g: (200-400) mL: 10 g. For example, it can be 1.5 g: 300 mL: 10 g, 1 g: 200 mL: 10 g or 2 g: 400 mL: 10 g, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0038] Preferably, the organic solvent in step (2) includes xylene.

[0039] Preferably, the temperature of the second reaction in step (2) is 60-70 °C and the time is 24-30 h.

[0040] The temperature of the second reaction is 60-70 °C. For example, it can be 60 °C, 62 °C, 65 °C, 68 °C or 70 °C, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0041] The time of the second reaction is 24-30 h. For example, it can be 24 h, 25 h, 26 h, 28 h or 30 h, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0042] Preferably, the second reaction is terminated by adding absolute ethanol.

[0043] Preferably, after the second reaction in step (2), there are also steps of solid-liquid separation, washing and drying.

[0044] Preferably, the preparation method of the PE-g-MA in step (2) includes: mixing high-density polyethylene, organic solvent, maleic anhydride and dibenzoyl peroxide and then reacting, naturally cooling, and washing and drying the obtained flocculent precipitate with acetone to obtain PE-g-MA.

[0045] Preferably, the dosage ratio of the high-density polyethylene, organic solvent, maleic anhydride and dibenzoyl peroxide is 10 g: (80-120) mL: (4-6) g: 1 g. For example, it can be 10 g: 100 mL: 5 g: 1 g, 10 g: 80 mL: 4 g: 1 g or 10 g: 120 mL: 6 g: 1 g, but is not limited to the listed values, and other unlisted values within the numerical range are equally applicable.

[0046] Preferably, the organic solvent includes xylene.

[0047] Preferably, the temperature of the reaction is 125-135 °C and the time is 2-4 h.

[0048] The temperature of the reaction is 125 - 135 °C. For example, it can be 125 °C, 128 °C, 130 °C, 132 °C or 135 °C, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.

[0049] The time of the reaction is 2 - 4 h. For example, it can be 2 h, 2.5 h, 3 h, 3.5 h or 4 h, but is not limited to the listed values. Other unlisted values within the numerical range are equally applicable.

[0050] In a second aspect, the present invention provides an outer sheath material for a chip - implanted temperature - measuring cable, and the outer sheath material for the chip - implanted temperature - measuring cable is prepared by the preparation method of the outer sheath material for the chip - implanted temperature - measuring cable described in the first aspect.

[0051] The outer sheath material for the chip - implanted temperature - measuring cable provided by the present invention is given a low dielectric constant and loss factor by adding a modifier, which facilitates the transmission of signals by the chip implanted in the cable, and reduces signal attenuation and delay.

[0052] In a third aspect, the present invention provides a chip - implanted temperature - measuring cable. The chip - implanted temperature - measuring cable includes an outer sheath layer made by melt - extruding the outer sheath material for the chip - implanted temperature - measuring cable described in the second aspect;

[0053] The chip - implanted temperature - measuring cable further includes a conductor. The surface of the conductor is wrapped with an insulating layer, and the surface of the insulating layer is successively coated with an inner sheath layer and an outer sheath layer. A filling rope is filled between the insulating layer and the inner sheath layer, and a temperature - measuring chip is arranged between the inner sheath layer and the outer sheath layer.

[0054] The chip - implanted temperature - measuring cable provided by the present invention realizes the effect of real - time detection of the cable temperature by implanting a temperature - measuring chip. The implanted chip has an integrated temperature - sensing function and operates in a passive manner by receiving the radio - frequency energy of a reader - writer. By real - time detection of the cable temperature, faults can be discovered and processed in time, improving the service life of the cable. In addition, using the outer sheath material for the chip - implanted temperature - measuring cable prepared in this application as the raw material to prepare the outer sheath layer of the cable not only has excellent mechanical properties, but also endows the outer sheath layer with a low dielectric constant and loss factor, facilitating the transmission of signals by the chip implanted in the cable and reducing signal attenuation and delay.

[0055] Preferably, the conductor is a single conductive copper material or a stranded conductor composed of two or more conductive copper materials.

[0056] Preferably, the insulating layer includes a conductor insulation shielding layer and a metal shielding layer successively coated on the surface of the conductor.

[0057] A metal shielding layer and a conductor insulating shielding layer are provided between the chip and the conductor, effectively preventing interference with the chip signal during the power transmission of the power cable.

[0058] Preferably, the metal shielding layer is made by winding a copper tape or braiding copper wires.

[0059] Preferably, the inner sheath layer includes an isolation layer and a steel tape armor layer sequentially coated on the surface of the insulating layer.

[0060] Compared with the prior art, the present invention has the following beneficial effects:

[0061] (1) The preparation method of the outer sheath material of the chip-implanted temperature-measuring cable provided by the present invention uses high-density polyethylene as the base material and adds a modifier to prepare the outer sheath material of the chip-implanted temperature-measuring cable. Among them, in the preparation of the modifier, first, the multi-walled carbon nanotubes are fluorinated, so that C-F bonds are formed on the surface of the multi-walled carbon nanotubes. The strong electronegativity of the generated C-F bonds inhibits electronic polarization and reduces the dielectric constant. Then, a porous crystal material is in-situ grown on the surface of the fluorinated multi-walled carbon nanotubes by using a metal source and an organic ligand. The porous crystal material adsorbs trace amounts of water vapor, which can avoid dielectric loss caused by moisture. Finally, the amino group on the intermediate reacts with the carboxyl group of PE-g-MA by condensation to obtain the modifier. The multi-walled carbon nanotubes in the prepared modifier can effectively improve the mechanical properties of the material, and the fluorinated layer obtained by fluorinating the multi-walled carbon nanotubes can block the leakage current path; while the porous crystal material deposited on the surface of the fluorinated multi-walled carbon nanotubes can inhibit interfacial polarization. Using the obtained modifier in the outer sheath material of the chip-implanted temperature-measuring cable can endow it with good mechanical properties, low dielectric constant and loss factor, good electromagnetic wave permeability, effectively reduce signal attenuation and delay during chip signal transmission, and improve high-frequency signal penetration.

[0062] (2) The chip-implanted temperature-measuring cable provided by the present invention realizes the effect of real-time detection of the cable temperature by implanting a temperature-measuring chip. The implanted chip has an integrated temperature sensing function and operates in a passive manner by receiving the radio frequency energy of the reader-writer. By real-time detecting the cable temperature, faults can be discovered and processed in time, improving the service life of the cable. BRIEF DESCRIPTION OF THE DRAWINGS

[0063] Figure 1 is a schematic structural diagram of the chip-implanted temperature-measuring cable provided in Embodiment 1 of the present invention.

[0064] Among them: 1. Conductor; 2. Conductor insulating shielding layer; 3. Metal shielding layer; 4. Filling rope; 5. Isolation layer; 6. Steel tape armor layer; 7. Temperature-measuring chip; 8. Outer sheath layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0065] The technical solution of the present invention will be further described below through specific embodiments. Those skilled in the art should understand that the embodiments are only for helping to understand the present invention and should not be regarded as specific limitations on the present invention.

[0066] In the following embodiments, the high-density polyethylene is of the LO555P type; the outer diameter of the multi-walled carbon nanotubes is 10 - 20 nm, and the length is 30 μm.

[0067] Example 1

[0068] This embodiment provides an outer sheath material for a chip-implanted temperature-measuring cable. The preparation method of the outer sheath material for the chip-implanted temperature-measuring cable includes the following steps:

[0069] Based on a total mass percentage of 100 wt%, 70% high-density polyethylene, 12% modifier, 3% boron nitride nanosheets, and 15% functional additives are melt-blended in a twin-screw extruder to obtain the outer sheath material for the chip-implanted temperature-measuring cable; the functional additives include antioxidant 1010, ultraviolet absorber UV-531, zinc stearate, and nano-aluminum hydroxide with a mass ratio of 0.8:0.4:0.8:13.

[0070] The preparation method of the modifier includes:

[0071] (1) Place the multi-walled carbon nanotubes in a plasma reactor, control the power to 150 W, the pressure to 10 Pa, introduce CF4 for fluorination treatment for 25 min. The obtained fluorinated multi-walled carbon nanotubes are uniformly dispersed in N,N-dimethylformamide, and then ZrCl4 and 2-aminoterephthalic acid are added for mixing. The dosage ratio of the fluorinated multi-walled carbon nanotubes, N,N-dimethylformamide, ZrCl4, and 2-aminoterephthalic acid is 10 g:100 mL:6 g:2.5 g; then a first reaction is carried out at a temperature of 115 °C for 13 h. After washing and drying, an intermediate is obtained.

[0072] (2) Mix high-density polyethylene, xylene, maleic anhydride, and dibenzoyl peroxide with a dosage ratio of 10 g:100 mL:5 g:1 g and then carry out a reaction at a temperature of 130 °C for 3 h. Let it cool naturally. The obtained flocculent precipitate is washed with acetone and dried to obtain PE-g-MA.

[0073] Mix PE-g-MA, xylene, and the intermediate obtained in step (1) with a dosage ratio of 1.5 g:300 mL:10 g and then carry out a second reaction at a temperature of 65 °C for 26 h. Add absolute ethanol to terminate the reaction. After filtration, washing, and drying, the modifier is obtained.

[0074] The obtained chip-implanted temperature-measuring cable outer sheath material is melt-extruded to form an outer sheath layer 8 for use in the chip-implanted temperature-measuring cable. The structural schematic diagram of the chip-implanted temperature-measuring cable is as shown in Figure 1 Figure Figure 1 . The chip-implanted temperature-measuring cable further includes a conductor 1, which is obtained by stranding two conductive copper materials. The surface of the conductor 1 is sequentially coated with a conductor insulation shielding layer 2 and a metal shielding layer 3 to form an insulated wire core. The metal shielding layer 3 is made of copper wire braiding. A filling rope 4 is filled outside the three insulated wire cores, and then an isolation layer 5 and a steel tape armor layer 6 are sequentially coated. A temperature-measuring chip 7 is arranged on the surface of the steel tape armor layer 6, and the outer sheath layer 8 is coated on the surface of the steel tape armor layer 6.

[0075] Example 2

[0076] This example provides a chip-implanted temperature-measuring cable outer sheath material. The preparation method of the chip-implanted temperature-measuring cable outer sheath material includes the following steps:

[0077] Based on the total mass percentage content of 100 wt%, 66% high-density polyethylene, 15% modifier, 4% boron nitride nanosheets, and 15% functional additives are melt-blended in a twin-screw extruder to obtain the chip-implanted temperature-measuring cable outer sheath material. The functional additives include antioxidant 1010, ultraviolet absorber UV-531, zinc stearate, and nano-aluminum hydroxide with a mass ratio of 0.5:0.3:0.5:15.

[0078] The preparation method of the modifier includes:

[0079] (1) Place multi-walled carbon nanotubes in a plasma reactor, control the power to 100 W, the pressure to 12 Pa, introduce CF4 for fluorination treatment for 15 min. The obtained fluorinated multi-walled carbon nanotubes are evenly dispersed in N,N-dimethylformamide, and then ZrCl4 and 2-aminoterephthalic acid are added for mixing. The dosage ratio of the fluorinated multi-walled carbon nanotubes, N,N-dimethylformamide, ZrCl4, and 2-aminoterephthalic acid is 10 g:150 mL:4 g:4 g. Then a first reaction is carried out at a temperature of 110 °C for 15 h. After washing and drying, an intermediate is obtained.

[0080] (2) Mix high-density polyethylene, xylene, maleic anhydride, and dibenzoyl peroxide with a dosage ratio of 10 g:80 mL:4 g:1 g and then carry out a reaction at a temperature of 125 °C for 4 h. After natural cooling, the obtained flocculent precipitate is washed with acetone and dried to obtain PE-g-MA.

[0081] Mix PE-g-MA, xylene, and the intermediate obtained in step (1) at a dosage ratio of 1 g: 200 mL: 10 g, and then carry out the second reaction at a temperature of 60 °C for 30 h. Add absolute ethanol to terminate the reaction, and after filtration, washing, and drying, the modifier is obtained.

[0082] The obtained outer sheath material of the chip-implanted temperature-measuring cable is melt-extruded to form an outer sheath layer 8 for use in the chip-implanted temperature-measuring cable. The structure of the chip-implanted temperature-measuring cable is the same as that in Example 1.

[0083] Example 3

[0084] This example provides an outer sheath material for a chip-implanted temperature-measuring cable. The preparation method of the outer sheath material for the chip-implanted temperature-measuring cable includes the following steps:

[0085] Based on a total mass percentage content of 100 wt%, melt-blend 83% high-density polyethylene, 5% modifier, 2% boron nitride nanosheets, and 10% functional additives in a twin-screw extruder to obtain the outer sheath material for the chip-implanted temperature-measuring cable. The functional additives include antioxidant 1010, ultraviolet absorber UV-531, zinc stearate, and nanoaluminum hydroxide with a mass ratio of 1:0.5:1:10.

[0086] The preparation method of the modifier includes:

[0087] (1) Place multi-walled carbon nanotubes in a plasma reactor, control the power at 200 W, the pressure at 8 Pa, introduce CF4 for fluorination treatment for 30 min. The obtained fluorinated multi-walled carbon nanotubes are uniformly dispersed in N,N-dimethylformamide, and then ZrCl4 and 2-aminoterephthalic acid are added for mixing. The dosage ratio of the fluorinated multi-walled carbon nanotubes, N,N-dimethylformamide, ZrCl4, and 2-aminoterephthalic acid is 10 g: 200 mL: 8 g: 5 g. Then carry out the first reaction at a temperature of 120 °C for 12 h, and after washing and drying, an intermediate is obtained.

[0088] (2) Mix high-density polyethylene, xylene, maleic anhydride, and dibenzoyl peroxide at a dosage ratio of 10 g: 120 mL: 6 g: 1 g and then carry out the reaction at a temperature of 135 °C for 2 h. Let it cool naturally. The obtained flocculent precipitate is washed with acetone and dried to obtain PE-g-MA.

[0089] Mix PE-g-MA, xylene, and the intermediate obtained in step (1) at a dosage ratio of 2 g: 400 mL: 10 g, and then carry out the second reaction at a temperature of 70 °C for 24 h. Add absolute ethanol to terminate the reaction, and after filtration, washing, and drying, the modifier is obtained.

[0090] The obtained chip-implanted temperature-measuring cable outer sheath material is melt-extruded to form an outer sheath layer 8 for use in the chip-implanted temperature-measuring cable. The structure of the chip-implanted temperature-measuring cable is the same as that in Example 1.

[0091] Example 4

[0092] This example provides a chip-implanted temperature-measuring cable outer sheath material. The preparation method of the chip-implanted temperature-measuring cable outer sheath material is different from that in Example 1 in that, except that the power of the fluorination treatment in step (1) is adjusted to 50 W, the rest are the same as in Example 1.

[0093] Example 5

[0094] This example provides a chip-implanted temperature-measuring cable outer sheath material. The preparation method of the chip-implanted temperature-measuring cable outer sheath material is different from that in Example 1 in that, except that the power of the fluorination treatment in step (1) is adjusted to 250 W, the rest are the same as in Example 1.

[0095] Example 6

[0096] This example provides a chip-implanted temperature-measuring cable outer sheath material. The preparation method of the chip-implanted temperature-measuring cable outer sheath material is different from that in Example 1 in that, except that the dosage ratio of the fluorinated multi-walled carbon nanotubes, N,N-dimethylformamide, ZrCl4, and 2-aminoterephthalic acid in step (1) is adjusted to 5 g:50 mL:2 g:1 g, the rest are the same as in Example 1.

[0097] Example 7

[0098] This example provides a chip-implanted temperature-measuring cable outer sheath material. The preparation method of the chip-implanted temperature-measuring cable outer sheath material is different from that in Example 1 in that, except that the dosage ratio of the fluorinated multi-walled carbon nanotubes, N,N-dimethylformamide, ZrCl4, and 2-aminoterephthalic acid in step (1) is adjusted to 15 g:250 mL:10 g:7 g, the rest are the same as in Example 1.

[0099] Example 8

[0100] This example provides a chip-implanted temperature-measuring cable outer sheath material. The preparation method of the chip-implanted temperature-measuring cable outer sheath material is different from that in Example 1 in that, except that the temperature of the second reaction in step (2) is adjusted to 50 °C, the rest are the same as in Example 1.

[0101] Example 9

[0102] This embodiment provides an outer sheath material for a chip-implanted temperature-measuring cable. The difference between the preparation method of the outer sheath material for the chip-implanted temperature-measuring cable and that of Example 1 is that except that the temperature of the second reaction in step (2) is adjusted to 80 °C, the rest are the same as in Example 1.

[0103] Comparative Example 1

[0104] This comparative example provides an outer sheath material for a chip-implanted temperature-measuring cable. The difference between the preparation method of the outer sheath material for the chip-implanted temperature-measuring cable and that of Example 1 is that the multi-walled carbon nanotubes in step (1) are not fluorinated and are directly used in the first reaction, and the rest are the same as in Example 1.

[0105] Comparative Example 2

[0106] This comparative example provides an outer sheath material for a chip-implanted temperature-measuring cable. The difference between the preparation method of the outer sheath material for the chip-implanted temperature-measuring cable and that of Example 1 is that the fluorinated multi-walled carbon nanotubes in step (1) are replaced with nano-silica in equal mass, and the rest are the same as in Example 1.

[0107] Comparative Example 3

[0108] This comparative example provides an outer sheath material for a chip-implanted temperature-measuring cable. The difference between the preparation method of the outer sheath material for the chip-implanted temperature-measuring cable and that of Example 1 is that there is no step (2), and the intermediate obtained in step (1) is directly used as a modifier to prepare the outer sheath material for the chip-implanted temperature-measuring cable, and the rest are the same as in Example 1.

[0109] Performance testing

[0110] (1) Waterproof and moisture-proof performance:

[0111] The water absorption rate of the outer sheath materials for the chip-implanted temperature-measuring cables prepared in Examples 1-7 and Comparative Examples 1-3 was detected according to ASTM D570, and the results are shown in Table 1;

[0112] The volume resistivity of the outer sheath materials for the chip-implanted temperature-measuring cables prepared in Examples 1-7 and Comparative Examples 1-3 was detected according to ASTM D257, and the volume resistivity results before and after immersion treatment (72 h, 40 °C) are shown in Table 1.

[0113] (2) Dielectric performance: The dielectric constant of the outer sheath materials for the chip-implanted temperature-measuring cables prepared in Examples 1-9 and Comparative Examples 1-3 at 100 kHz was detected according to ASTM D150, and the results are shown in Table 2.

[0114] (3) Mechanical properties: According to GB / T 1040, the tensile strength and elongation at break of the outer sheath materials of the chip-implanted temperature-measuring cables prepared in Examples 1-9 and Comparative Examples 1-3 were detected, and the results are shown in Table 2.

[0115] Table 1

[0116]

[0117] Table 2

[0118]

[0119] As can be seen from Table 1, the outer sheath material of the chip-implanted temperature-measuring cable provided by the present invention has a low water absorption rate, and the volume resistivity does not decrease significantly after the immersion test, and it has good waterproof and moisture-proof performance. As the outer sheath layer of the power cable, it can effectively protect the internal equipment. As can be seen from Table 2, the outer sheath material of the chip-implanted temperature-measuring cable prepared in this application has excellent mechanical properties and a low dielectric constant. Applied to the outer sheath of the chip-implanted power cable, it comprehensively balances electromagnetic protection, mechanical strength, environmental tolerance and signal compatibility, and improves the chip function reliability and the overall life of the cable.

[0120] By comparing Example 1 with Examples 4 and 5, it can be seen that if the power of the fluorination treatment is too low, the water absorption rate will be relatively high, and if the power is too high, the mechanical properties will be relatively low. By comparing Example 1 with Examples 6 and 7, it can be seen that if the raw material ratio of the first reaction exceeds the specified range, the water absorption rate will be relatively high or the dielectric loss will be too large. By comparing Example 1 with Examples 8 and 9, it can be seen that if the temperature of the second reaction is too high or too low, the mechanical properties will decline. By comparing Example 1 with Comparative Example 1, it can be seen that if the multi-walled carbon nanotubes are not fluorinated, the dielectric constant and the water absorption rate will be relatively high. By comparing Example 1 with Comparative Example 2, it can be seen that using nano-silica to replace fluorinated multi-walled carbon nanotubes will result in poor mechanical properties. By comparing Example 1 with Comparative Example 3, it can be seen that directly using the intermediate as a modifier will result in a high water absorption rate and poor mechanical properties.

[0121] In summary, the preparation method of the outer sheath material of the chip-implanted temperature-measuring cable provided by the present invention uses high-density polyethylene as the base material and adds a modifier to prepare the outer sheath material of the chip-implanted temperature-measuring cable. Among them, in the preparation of the modifier, first, the multi-walled carbon nanotubes are fluorinated, so that C-F bonds are formed on the surface of the multi-walled carbon nanotubes. The strong electronegativity of the generated C-F bonds inhibits electronic polarization and reduces the dielectric constant. Then, a porous crystal material is in-situ grown on the surface of the fluorinated multi-walled carbon nanotubes by using a metal source and an organic ligand. The porous crystal material adsorbs trace amounts of water vapor, which can avoid dielectric loss caused by moisture. Finally, the amino group on the intermediate reacts with the carboxyl group of PE-g-MA through condensation to obtain the modifier. In the prepared modifier, the multi-walled carbon nanotubes can effectively improve the mechanical properties of the material, and the fluorinated layer obtained by fluorinating the multi-walled carbon nanotubes can block the leakage current path; while the porous crystal material deposited on the surface of the fluorinated multi-walled carbon nanotubes can inhibit interfacial polarization. When the obtained modifier is used in the outer sheath material of the chip-implanted temperature-measuring cable, it can make the cable have good mechanical properties, low dielectric constant and loss factor, good electromagnetic wave permeability, effectively reduce the signal attenuation and delay when the chip transmits signals, and improve the high-frequency signal penetration.

[0122] The chip-implanted temperature-measuring cable provided by the present invention realizes the effect of real-time detection of the cable temperature by implanting a temperature-measuring chip. The implanted chip has an integrated temperature sensing function and operates in a passive manner by receiving the radio frequency energy of the reader-writer. By real-time detection of the cable temperature, faults can be found and processed in time, and the service life of the cable is improved.

[0123] The applicant declares that the above description is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention fall within the protection scope and the disclosure scope of the present invention.

Claims

1. A preparation method of an outer sheath material for a chip-implanted temperature-measuring cable, characterized in that The preparation method includes the following steps: Melting and blending high-density polyethylene, a modifier, boron nitride nanosheets, and a functional additive to obtain the outer sheath material of the chip-implanted temperature-measuring cable; The preparation method of the modifier includes: (1) Fluorinating multi-walled carbon nanotubes, mixing the obtained fluorinated multi-walled carbon nanotubes with an organic solvent, a metal source, and an organic ligand, and then performing a first reaction to obtain an intermediate; (2) Mixing PE-g-MA, an organic solvent, and the intermediate obtained in step (1), and then performing a second reaction to obtain the modifier.

2. The preparation method according to claim 1, characterized in that, Based on the total mass percentage being 100 wt%, the raw materials for the melting and blending include: 66 - 83 wt% of high-density polyethylene, 5 - 15 wt% of the modifier, 2 - 4 wt% of boron nitride nanosheets, and 10 - 15 wt% of the functional additive; Preferably, the functional additive includes an antioxidant, an ultraviolet absorber, a lubricant, and a flame retardant in a mass ratio of (0.5 - 1):(0.3 - 0.5):(0.5 - 1):(10 - 15).

3. The preparation method according to claim 1 or 2, characterized in that, The fluorination treatment in step (1) is carried out in a plasma reactor; Preferably, CF4 is introduced in the fluorination treatment in step (1); Preferably, the power of the fluorination treatment in step (1) is 100 - 200 W, and the pressure is 8 - 12 Pa; Preferably, the time of the fluorination treatment in step (1) is 15 - 30 min.

4. The preparation method according to any one of claims 1 to 3, characterized in that, The dosage ratio of the fluorinated multi-walled carbon nanotubes, the organic solvent, the metal source, and the organic ligand in step (1) is 10 g:(100 - 200) mL:(4 - 8) g:(2.5 - 5) g; Preferably, the organic solvent in step (1) includes N,N-dimethylformamide; Preferably, the metal source in step (1) includes ZrCl4; Preferably, the organic ligand in step (1) includes 2-aminoterephthalic acid.

5. The preparation method according to any one of claims 1-4, characterized in that, The temperature of the first reaction in step (1) is 110 - 120 °C, and the time is 12 - 15 h.

6. The preparation method according to any one of claims 1-5, characterized in that, The dosage ratio of PE-g-MA, the organic solvent, and the intermediate in step (2) is (1 - 2) g:(200 - 400) mL:10 g; Preferably, the organic solvent in step (2) includes xylene; Preferably, the temperature of the second reaction in step (2) is 60 - 70 °C, and the time is 24 - 30 h.

7. The preparation method according to any one of claims 1-6, characterized in that, The preparation method of PE-g-MA in step (2) includes: mixing high-density polyethylene, an organic solvent, maleic anhydride, and dibenzoyl peroxide, and then performing a reaction. The obtained flocculent precipitate is washed and dried to obtain PE-g-MA; Preferably, the dosage ratio of high-density polyethylene, the organic solvent, maleic anhydride, and dibenzoyl peroxide is 10 g:(80 - 120) mL:(4 - 6) g:1 g; Preferably, the organic solvent includes xylene; Preferably, the temperature of the reaction is 125 - 135 °C, and the time is 2 - 4 h.

8. An outer sheath material for a chip-implanted temperature-measuring cable, characterized in that, The outer sheath material of the chip-implanted temperature-measuring cable is prepared by the preparation method of the outer sheath material of the chip-implanted temperature-measuring cable according to any one of claims 1 - 7.

9. A chip-implanted temperature-measuring cable, characterized in that, The chip-implanted temperature-measuring cable includes an outer sheath layer made by melt-extruding the outer sheath material of the chip-implanted temperature-measuring cable described in claim 8; The chip-implanted temperature-measuring cable further includes a conductor, the surface of the conductor is wrapped with an insulating layer, the surface of the insulating layer is successively coated with an inner sheath layer and an outer sheath layer, a filling rope is filled between the insulating layer and the inner sheath layer, and a temperature-measuring chip is arranged between the inner sheath layer and the outer sheath layer.

10. The chip-implanted temperature-measuring cable according to claim 9, wherein, The conductor is obtained by stranding one conductive copper material or two or more conductive copper materials; Preferably, the insulating layer includes a conductor insulation shielding layer and a metal shielding layer successively coated on the surface of the conductor; Preferably, the metal shielding layer is made by winding a copper tape or braiding copper wires; Preferably, the inner sheath layer includes an isolation layer and a steel tape armor layer successively coated on the surface of the insulating layer.

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