Temperature sensor and electronic device including the same

Abstract

The invention relates to a temperature sensor and an electronic device including the same. The temperature sensor includes a variable voltage selection circuit configured to compare, when a selection pulse is generated, a first variable voltage having a voltage level corresponding to an internal temperature of a first region and a second variable voltage having a voltage level corresponding to an internal temperature of a second region to generate a selected variable voltage, and a voltage level of the second variable voltage corresponds to an internal temperature of the second region; and a temperature code generation circuit configured to compare the selected variable voltage with a reference voltage to generate a temperature code whenever the comparison pulse is generated after the temperature code activation signal is activated.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2024 - 0000580, filed on January 2, 2024, which is incorporated herein by reference in its entirety. Technical field

[0003] Various embodiments of the present disclosure generally relate to temperature sensors, and more particularly, to electronic devices including temperature sensors. Background art

[0004] Recently, electronic systems are equipped with sensors that can sense various operating conditions to control the speed and activation of internal operations. The operating conditions sensed by the sensors can include temperature and light amount. The sensors can include a temperature sensor and an optical sensor. The temperature sensor generates a temperature code according to the temperature, and the optical sensor generates a light - sensing code according to the light amount. Summary of the invention

[0005] Embodiments of the present disclosure may provide a temperature sensor including: a variable - voltage selection circuit configured to compare a first variable voltage with a second variable voltage to generate a selected variable voltage when a selection pulse is generated, wherein a voltage level of the first variable voltage corresponds to an internal temperature of a first region and a voltage level of the second variable voltage corresponds to an internal temperature of a second region; and a temperature - code generation circuit configured to compare the selected variable voltage with a reference voltage to generate a temperature code whenever a comparison pulse is generated after a temperature - code activation signal is activated.

[0006] Embodiments of the present disclosure may provide a temperature sensor including: a variable - voltage selection circuit configured to receive a plurality of variable voltages, each of the plurality of variable voltages being set to have a voltage level corresponding to an internal temperature of each of a plurality of regions, and select and output the variable voltage having the highest voltage level among the variable voltages as the selected variable voltage; and a temperature - code generation circuit configured to compare the selected variable voltage with a reference voltage to generate a temperature code whenever a comparison pulse is generated after a temperature - code activation signal is activated.

[0007] Embodiments of the present disclosure may provide an electronic device, including: a first variable voltage generation circuit located in a first region and configured to generate a first variable voltage, the voltage level of the first variable voltage corresponding to the internal temperature of the first region; a second variable voltage generation circuit located in a second region and configured to generate a second variable voltage, the voltage level of the second variable voltage corresponding to the internal temperature of the second region; a variable voltage selection circuit configured to compare the first variable voltage with the second variable voltage to generate a selected variable voltage when a selection pulse is generated; and a temperature code generation circuit configured to compare the selected variable voltage with a reference voltage to generate a temperature code whenever a comparison pulse is generated after a temperature code activation signal is activated.

[0008] Embodiments of the present disclosure may provide an electronic device, including: a variable voltage selection circuit configured to select and output, as a first selected variable voltage, the first measured one of a first variable voltage and a second variable voltage, and select and output, as a second selected variable voltage, the second measured one of the first variable voltage and the second variable voltage; and a temperature code generation circuit configured to compare the first selected variable voltage with a reference voltage to generate a temperature code when the first selected variable voltage is received, and compare the second selected variable voltage with a reference voltage to generate a temperature code when the second selected variable voltage is received. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a block diagram showing a configuration of a temperature sensor according to an embodiment of the present disclosure.

[0010] Figure 2 is a block diagram showing a configuration of an embodiment of a code control circuit included in the temperature sensor shown according to Figure 1 the temperature sensor shown.

[0011] Figure 3 is a block diagram showing an embodiment of Figure 1 and Figure 2 the operation of the temperature sensor shown in.

[0012] Figure 4 is a block diagram showing a configuration of an embodiment of an electronic device including the temperature sensor shown according to Figure 1 the temperature sensor shown.

[0013] Figure 5 is a block diagram showing a configuration of an embodiment of an electronic device including the temperature sensor shown according to Figure 1 the temperature sensor shown.

[0014] Figure 6 is a block diagram showing a configuration of an embodiment of an electronic device including the temperature sensor shown according to Figure 1 the temperature sensor shown.

[0015] Figure 7 is a block diagram showing the configuration of a temperature sensor according to an embodiment of the present disclosure.

[0016] Figure 8 is a block diagram showing the configuration of an embodiment of an electronic device including the Figure 7 temperature sensor shown.

[0017] Figure 9 is a block diagram showing the configuration of an embodiment of an electronic device including the Figure 7 temperature sensor shown. DETAILED DESCRIPTION

[0018] In the following description of the embodiments, when a parameter is referred to as "predetermined", this may mean that when the parameter is used in a process or algorithm, the value of the parameter is pre-determined. The value of the parameter may be set at the start of the process or algorithm, or may be set during the period when the process or algorithm is being executed.

[0019] It should be understood that although the terms "first", "second", "third", etc. are used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another, and are not intended to imply an order or number of elements. Thus, a first element in some embodiments may be referred to as a second element in other embodiments without departing from the teachings of the present disclosure.

[0020] In addition, it should be understood that when an element is referred to as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element, or there may be intervening elements. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements.

[0021] A logic "high" level and a logic "low" level can be used to describe the logic level of an electrical signal. A signal having a logic "high" level can be distinguished from a signal having a logic "low" level. For example, when a signal having a first voltage corresponds to a signal having a logic "high" level, a signal having a second voltage corresponds to a signal having a logic "low" level. In an embodiment, the logic "high" level can be set to a voltage level higher than the voltage level of the logic "low" level. In addition, the logic level of a signal can be set to be different or opposite according to various embodiments. For example, a certain signal having a logic "high" level in one embodiment can be set to have a logic "low" level in another embodiment.

[0022] The term "logical bit group" may refer to a combination of the logical levels of the bits included in a signal. When the logical level of each bit included in the signal changes, the logical bit group of the signal may be set differently. For example, if the signal includes two bits, when the logical level of each of the two bits included in the signal is "logical low level, logical low level", the logical bit group of the signal may be set to a first logical bit group, and when the logical level of each of the two bits included in the signal is "logical low level and logical high level", the logical bit group of the signal may be set to a second logical bit group.

[0023] Various embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. However, the embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the present disclosure.

[0024] Figure 1 is a block diagram showing the configuration of the temperature sensor 10 according to an embodiment of the present disclosure.

[0025] As Figure 1 shown, the temperature sensor 10 may include a first variable voltage generation circuit (VTEMP1 GEN) 101, a second variable voltage generation circuit (VTEMP2 GEN) 103, a variable voltage selection circuit 105, and a temperature code generation circuit 107.

[0026] The first variable voltage generation circuit 101 may generate a first variable voltage VTEMP1 based on the sense activation signal S_EN. The sense activation signal S_EN may be activated for a temperature sensing operation in which the temperature sensor 10 senses the internal temperature of multiple regions and generates a temperature code corresponding to the highest internal temperature. When the sense activation signal S_EN is activated, the first variable voltage generation circuit 101 may generate a first variable voltage VTEMP1 having a voltage level corresponding to the internal temperature of the first region. As an example, the first variable voltage generation circuit 101 may generate a first variable voltage VTEMP1 having a voltage level that increases as the internal temperature of the first region increases. The first variable voltage generation circuit 101 may send the first variable voltage VTEMP1 to the selection signal generation circuit 111. According to an embodiment, a unity gain buffer (not shown) capable of amplifying the first variable voltage VTEMP1 may be provided between the first variable voltage generation circuit 101 and the selection signal generation circuit 111, so that signal loss occurring when sending the first variable voltage VTEMP1 may be prevented or reduced.

[0027] The second variable voltage generation circuit 103 can generate a second variable voltage VTEMP2 based on the sense activation signal S_EN. When the sense activation signal S_EN is activated, the second variable voltage generation circuit 103 can generate a second variable voltage VTEMP2 having a voltage level corresponding to the internal temperature of the second region. As an example, the second variable voltage generation circuit 103 can generate a second variable voltage VTEMP2 having a voltage level that increases as the internal temperature of the second region increases. The second region can be provided separately from the first region, and each of the first region and the second region can be provided in various ways according to embodiments. The second variable voltage generation circuit 103 can send the second variable voltage VTEMP2 to the selection signal generation circuit 111. According to an embodiment, a unity gain buffer (not shown) capable of amplifying the second variable voltage VTEMP2 can be provided between the second variable voltage generation circuit 103 and the selection signal generation circuit 111, thereby preventing or reducing signal loss that occurs when sending the second variable voltage VTEMP2.

[0028] The variable voltage selection circuit 105 can include a selection signal generation circuit 111 and a selector 113.

[0029] The selection signal generation circuit 111 may be electrically connected to the first variable voltage generation circuit 101 and the second variable voltage generation circuit 103 to receive the first variable voltage VTEMP1 from the first variable voltage generation circuit 101 and the second variable voltage VTEMP2 from the second variable voltage generation circuit 103. The selection signal generation circuit 111 may generate a selection signal M_SEL based on a selection pulse S_PUL, the first variable voltage VTEMP1, and the second variable voltage VTEMP2. The selection pulse S_PUL may be generated for a selection operation after the sense activation signal S_EN is activated. When the selection pulse S_PUL is generated, the selection signal generation circuit 111 may compare the first variable voltage VTEMP1 and the second variable voltage VTEMP2 to generate a selection signal M_SEL having a set logic level. As an example, the selection signal generation circuit 111 may generate a selection signal M_SEL set to have a first logic level for selecting the first variable voltage VTEMP1 when the first variable voltage VTEMP1 has a higher voltage level than the second variable voltage VTEMP2, and may generate a selection signal M_SEL set to have a second logic level for selecting the second variable voltage VTEMP2 when the second variable voltage VTEMP2 has a higher voltage level than the first variable voltage VTEMP1. As another example, the selection signal generation circuit 111 may be implemented to generate a selection signal M_SEL set to have a second logic level for selecting the second variable voltage VTEMP2 when the first variable voltage VTEMP1 has a higher voltage level than the second variable voltage VTEMP2, and may be implemented to generate a selection signal M_SEL set to have a first logic level for selecting the first variable voltage VTEMP1 when the second variable voltage VTEMP2 has a higher voltage level than the first variable voltage VTEMP1. The first logic level may be set to a logic "low" level, and the second logic level may be set to a logic "high" level, but this is merely an example, and the present disclosure is not limited thereto.

[0030] Selector 113 may be electrically connected to the first variable voltage generation circuit 101, the second variable voltage generation circuit 103, and the selection signal generation circuit 111 to receive a first variable voltage VTEMP1 from the first variable voltage generation circuit 101, a second variable voltage VTEMP2 from the second variable voltage generation circuit 103, and a selection signal M_SEL from the selection signal generation circuit 111. Selector 113 may generate a selected variable voltage VTEMP_S based on the first variable voltage VTEMP1, the second variable voltage VTEMP2, and the selection signal M_SEL. As an example, when the first variable voltage VTEMP1 is generated at a voltage level higher than that of the second variable voltage VTEMP2 and the selection signal M_SEL is set to have a first logic level, selector 113 may select and output the first variable voltage VTEMP1 as the selected variable voltage VTEMP_S, and when the second variable voltage VTEMP2 is generated at a voltage level higher than that of the first variable voltage VTEMP1 and the selection signal M_SEL is set to have a second logic level, selector 113 may select and output the second variable voltage VTEMP2 as the selected variable voltage VTEMP_S. As another example, selector 113 may be implemented to select and output the second variable voltage VTEMP2 as the selected variable voltage VTEMP_S when the first variable voltage VTEMP1 is generated at a voltage level higher than that of the second variable voltage VTEMP2 and the selection signal M_SEL is set to have a second logic level, and selector 113 may be implemented to select and output the first variable voltage VTEMP1 as the selected variable voltage VTEMP_S when the second variable voltage VTEMP2 is generated at a level higher than that of the first variable voltage VTEMP1 and the selection signal S_SEL is set to have a first logic level.

[0031] The variable voltage selection circuit 105 can compare the first variable voltage VTEMP1 and the second variable voltage VTEMP2 when the selection pulse S_PUL is generated, and select and output one of the first variable voltage VTEMP1 and the second variable voltage VTEMP2 as the selected variable voltage VTEMP_S. As an example, the variable voltage selection circuit 105 can select and output the first variable voltage VTEMP1 as the selected variable voltage VTEMP_S when the first variable voltage VTEMP1 has a higher voltage level than the second variable voltage VTEMP2 (i.e., the internal temperature of the first region is higher than the internal temperature of the second region), and select and output the second variable voltage VTEMP2 as the selected variable voltage VTEMP_S when the second variable voltage VTEMP2 has a higher voltage level than the first variable voltage VTEMP1 (i.e., the internal temperature of the second region is higher than the internal temperature of the first region). The variable voltage selection circuit 105 can generate the selected variable voltage VTEMP_S having a voltage level corresponding to the selected internal temperature, and the selected internal temperature is selected as the higher temperature among the internal temperature of the first region and the internal temperature of the second region. For example, the variable voltage selection circuit 105 can be implemented to select and output the second variable voltage VTEMP2 as the selected variable voltage VTEMP_S when the first variable voltage VTEMP1 has a higher voltage level than the second variable voltage VTEMP2 (i.e., the internal temperature of the first region is higher than the internal temperature of the second region), and can be implemented to select and output the first variable voltage VTEMP1 as the selected variable voltage VTEMP_S when the second variable voltage VTEMP2 has a higher voltage level than the first variable voltage VTEMP1 (i.e., the internal temperature of the second region is higher than the internal temperature of the first region). The variable voltage selection circuit 105 can generate the selected variable voltage VTEMP_S having a voltage level corresponding to the selected internal temperature, and the selected internal temperature is selected as the lower temperature among the internal temperature of the first region and the internal temperature of the second region.

[0032] The temperature code generation circuit 107 can include a reference voltage generation circuit (VREF GEN) 121, a comparison circuit 123, a code control circuit (CD CTR) 125, and a temperature code latch 127.

[0033] The reference voltage generation circuit 121 can be electrically connected to the code control circuit 125 to receive the preliminary temperature code TCD_P from the code control circuit 25. The reference voltage generation circuit 121 can generate a reference voltage VREF based on the preliminary temperature code TCD_P. The reference voltage generation circuit 121 can adjust the voltage level of the reference voltage VREF according to the preliminary temperature code TCD_P, or adjust the change rate of the voltage level according to the time change of the reference voltage VREF, but this is only an example, and the present disclosure is not limited thereto.

[0034] The comparison circuit 123 may be electrically connected to the reference voltage generation circuit 121 and the variable voltage selection circuit 105 to receive the reference voltage VREF from the reference voltage generation circuit 121, and may receive the selected variable voltage VTEMP_S from the variable voltage selection circuit 105. The comparison circuit 123 may generate a comparison signal COM based on the comparison pulse C_PUL, the reference voltage VREF, and the selected variable voltage VTEMP_S. After the temperature code activation signal TCD_EN is activated, the comparison pulse C_PUL may be generated multiple times for the comparison operation. The temperature code activation signal TCD_EN may be activated after the sense activation signal S_EN is activated and the selection pulse S_PUL is generated. Whenever the comparison pulse C_PUL is generated, the comparison circuit 123 may compare the selected variable voltage VTEMP_S with the reference voltage VREF to generate the comparison signal COM. Whenever the comparison pulse C_PUL is generated during the comparison period, the comparison circuit 123 may generate the comparison signal COM held in the non-activated state, and the selected variable voltage VTEMP_S is generated at a voltage level higher than the voltage level of the reference voltage VREF during the comparison period. When the comparison pulse C_PUL is generated after the selected variable voltage VTEMP_S is generated at a voltage level equal to or lower than the voltage level of the reference voltage VREF after passing through the comparison period, the comparison circuit 123 may generate the activated comparison signal COM. The logic level at which the comparison signal COM is activated may be set in various ways according to the embodiment.

[0035] The code control circuit 125 may be electrically connected to the comparison circuit 123 to receive the comparison signal COM from the comparison circuit 123. The code control circuit 125 may generate a preliminary temperature code TCD_P based on the comparison signal COM and the temperature code activation signal TCD_EN. After the temperature code activation signal TCD_EN is activated, when the comparison signal COM is activated as a result of the comparison operation (i.e., when the selected variable voltage VTEMP_S is generated at a voltage level equal to or lower than the voltage level of the reference voltage VREF), the code control circuit 125 may generate the preliminary temperature code TCD_P and the latch clock LCLK.

[0036] The temperature code latch 127 may be electrically connected to the code control circuit 125 to receive the preliminary temperature code TCD_P and the latch clock LCLK from the code control circuit 125. The temperature code latch 127 may generate a temperature code TCD based on the preliminary temperature code TCD_P and the latch clock LCLK. The temperature code latch 127 may latch the preliminary temperature code TCD_P synchronously with the latch clock LCLK and may output the preliminary temperature code TCD_P as the temperature code TCD.

[0037] After the temperature code activation signal TCD_EN is activated, the temperature code generation circuit 107 can generate a temperature code TCD by comparing a selected variable voltage VTEMP_S with a reference voltage VREF whenever a comparison pulse C_PUL is generated. After the temperature code activation signal TCD_EN is activated, the temperature code generation circuit 107 can perform a counting operation during a comparison period in which the selected variable voltage VTEMP_S is generated at a voltage level higher than the reference voltage VREF to generate a count code (e.g., Figure 2 C_CD in Figure 2 ). When the selected variable voltage VTEMP_S is determined to have a voltage level equal to or lower than the reference voltage VREF as a result of a comparison operation performed by the comparison pulse C_PUL, the temperature code generation circuit 107 can generate a temperature code TCD based on the count code (e.g.,

[0038] Figure 2 is a block diagram showing the configuration of a code control circuit 125A according to an embodiment of the code control circuit 125 shown in Figure 1 . As shown in Figure 2 , the code control circuit 125A can include a counter (CNT) 131, a code output circuit (CD OUT) 133, and a latch clock generation circuit (LCLK GEN) 135.

[0039] The counter 131 can sequentially perform a counting operation during a comparison period in which the selected variable voltage VTEMP_S is generated at a voltage level higher than the reference voltage VREF after the temperature code activation signal TCD_EN is activated to generate a count code C_CD. The period of the counting operation performed by the counter 131 can be set to be the same as the period in which the comparison pulse C_PUL is generated, but this is only an example and the present disclosure is not limited thereto.

[0040] The code output circuit 133 can be electrically connected to the counter 131 to receive the count code C_CD from the counter 131. The code output circuit 133 can generate a preliminary temperature code TCD_P based on a comparison signal COM and the count code C_CD. After the temperature code activation signal TCD_EN is activated, when the comparison signal COM is activated as a result of a comparison operation (i.e., when the selected variable voltage VTEMP_S is generated at a voltage level equal to or lower than the reference voltage VREF), the code output circuit 133 can output the count code C_CD as the preliminary temperature code TCD_P.

[0041] The latch clock generation circuit 135 can generate a latch clock LCKL based on the comparison signal COM. After the temperature code activation signal TCD_EN is activated, when the comparison signal COM is activated as a result of the comparison operation (i.e., when the selected variable voltage VTEMP_S is generated at a voltage level equal to or lower than the reference voltage VREF), the latch clock generation circuit 135 can generate the latch clock LCKL.

[0042] Figure 3 is a timing diagram showing Figure 1 and Figure 2 the operation of the temperature sensor 10 shown.

[0043] First, referring to Figure 1 and Figure 3 , when the sense activation signal S_EN is activated to a logic "high" level for temperature sensing operation at time T11, the first variable voltage generation circuit 101 can generate a first variable voltage VTEMP1 having a voltage level corresponding to the internal temperature of the first region, and generate a second variable voltage VTEMP2 having a voltage level corresponding to the internal temperature of the second region.

[0044] Next, referring to Figure 1 and Figure 3 , when the selection pulse S_PUL is generated at time T12, the variable voltage selection circuit 105 can compare the first variable voltage VTEMP1 and the second variable voltage VTEMP2 to select and output the first variable voltage VTEMP1 as the selected variable voltage VTEMP_S.

[0045] Next, referring to Figure 2 and Figure 3 , after the temperature code activation signal TCD_EN is activated at time T13, the counter 131 can sequentially perform a counting operation to generate a count code C_CD.

[0046] In addition, referring to Figure 1 and Figure 3 , after the temperature code activation signal TCD_EN is activated at time T13, the comparison circuit 123 can compare the selected variable voltage VTEMP_S with the reference voltage VREF each time the comparison pulse C_PUL is generated to generate a comparison signal COM. During the comparison period T13 - T14 in which the selected variable voltage VTEMP_S is generated at a voltage level higher than the reference voltage VREF, the comparison circuit 123 can generate a comparison signal COM that remains inactive at a logic "low" level each time the comparison pulse C_PUL is generated.

[0047] Finally, referring to Figure 1 and Figure 3, at time T14, when the comparison pulse C_PUL is generated, the selected variable voltage VTEMP_S can be generated at a voltage level equal to or lower than the voltage level of the reference voltage VREF, such that the comparison circuit 123 can generate a comparison signal COM activated at a logic "high" level. When the comparison signal COM is activated at a logic "high" level, the code control circuit 125 can generate a preliminary temperature code TCD_P and a latch clock LCLK. The temperature code latch 127 can latch the preliminary temperature code TCD_P synchronously with the latch clock LCLK, and output the latched preliminary temperature code TCD_P as the temperature code TCD.

[0048] As described above, the variable voltages VTEMP1 and VTEMP2 corresponding to the temperatures of multiple regions can be measured, the variable voltage corresponding to the highest temperature (the lowest temperature according to the embodiment) among the measured variable voltages VTEMP1 and VTEMP2 can be selected as the selected variable voltage VTEMP_S, and the temperature code TCD can be adjusted or trimmed to correspond to the selected variable voltage VTEMP_S, so as to measure the internal temperature of the region with the highest internal temperature among the multiple regions. In addition, whenever the temperature sensor 10 measures the variable voltages VTEMP1 and VTEMP2 corresponding to the temperatures of multiple regions, the temperature sensor 10 can repeatedly perform the operation of adjusting or trimming the temperature code according to the selected variable voltage VTEMP_S, so as to accurately generate the temperature code corresponding to the highest internal temperature among the internal temperatures of the multiple regions.

[0049] Figure 4 is a block diagram showing the configuration of an embodiment of an electronic device 201 including Figure 1 the temperature sensor 10 shown.

[0050] As Figure 4As shown, the electronic device 201 may include a first variable voltage generation circuit (VTEMP1 GEN) 101A, a second variable voltage generation circuit (VTEMP2 GEN) 103A, a variable voltage selection circuit (VTEMP SEL) 105A, and a temperature code generation circuit (TCODE GEN) 107A. The first variable voltage generation circuit 101A may be located in the central region of the electronic device 201 and may generate a first variable voltage VTEMP1 corresponding to the internal temperature of the central region of the electronic device 201. The second variable voltage generation circuit 103A may be located in the left region of the electronic device 201 and may generate a second variable voltage VTEMP2 corresponding to the internal temperature of the left region of the electronic device 201. The variable voltage selection circuit 105A and the temperature code generation circuit 107A may be located in the left region of the electronic device 201, adjacent to the second variable voltage generation circuit 103A. The first variable voltage generation circuit 101A, the second variable voltage generation circuit 103A, the variable voltage selection circuit 105A, and the temperature code generation circuit 107A may be implemented to be the same as the first variable voltage generation circuit 101, the second variable voltage generation circuit 103, the variable voltage selection circuit 105, and the temperature code generation circuit 107, respectively, and thus a detailed description of each configuration is omitted. Each of the left region and the central region of the electronic device 201 may be implemented as one of the following regions: a region forming various logic circuits (not shown) for controlling internal operations, a region generating an internal clock, and a region forming a circuit (not shown) for controlling signal transmission to an external device, but this is merely an example and the present disclosure is not limited thereto. The left region may be located in a first direction with respect to the central region, and the first direction may be set differently according to an embodiment.

[0051] In an embodiment, the electronic device 201 may be implemented to include the first variable voltage generation circuit 101A in the central region, the second variable voltage generation circuit 103A in the left region, and the variable voltage selection circuit 105A and the temperature code generation circuit 107A that receive the first variable voltage VTEMP1 and the second variable voltage VTEMP2 to generate a temperature code TCD, thereby reducing the layout area of the temperature sensor provided therein.

[0052] Figure 5 is a block diagram showing a configuration of an embodiment of an electronic device 203 including a temperature sensor 10 Figure 1 as shown.

[0053] As Figure 5As shown, the electronic device 203 may include a first variable voltage generation circuit (VTEMP1 GEN) 101B, a second variable voltage generation circuit (VTEMP2 GEN) 103B, a variable voltage selection circuit (VTEMP SEL) 105B, and a temperature code generation circuit (TCODE GEN) 107B. The first variable voltage generation circuit 101B may be located in the left region of the electronic device 203 and may generate a first variable voltage VTEMP1 corresponding to the internal temperature of the left region of the electronic device 203. The second variable voltage generation circuit 103B may be located in the central region of the electronic device 203 and may generate a second variable voltage VTEMP2 corresponding to the internal temperature of the central region of the electronic device 203. The variable voltage selection circuit 105B and the temperature code generation circuit 107B may be located in the central region of the electronic device 203, adjacent to the second variable voltage generation circuit 103B. The first variable voltage generation circuit 101B, the second variable voltage generation circuit 103B, the variable voltage selection circuit 105B, and the temperature code generation circuit 107B may be implemented to be the same as the first variable voltage generation circuit 101, the second variable voltage generation circuit 103, the variable voltage selection circuit 105, and the temperature code generation circuit 107, respectively, and thus a detailed description of each configuration is omitted. Each of the left region of the electronic device 203 and the central region in the electronic device 203 may be implemented as one of the following regions: a region forming various logic circuits (not shown) for controlling internal operations, a region generating an internal clock, and a region forming a circuit for controlling signal transmission to an external device (not shown), but this is merely an example and the present disclosure is not limited thereto.

[0054] In an embodiment, the electronic device 203 may be implemented to include the first variable voltage generation circuit 101B in the left region, the second variable voltage generation circuit 103B in the central region, and the variable voltage selection circuit 105B and the temperature code generation circuit 107B that receive the first variable voltage VTEMP1 and the second variable voltage VTEMP2 to generate a temperature code TCD, thereby reducing the layout area of the temperature sensor provided therein.

[0055] Figure 6 is a block diagram showing a configuration of an embodiment of an electronic device 205 including a Figure 1 temperature sensor 10 as shown.

[0056] As Figure 6As shown, the electronic device 205 may include a first variable voltage generation circuit (VTEMP1 GEN) 101C, a second variable voltage generation circuit (VTEMP2 GEN) 103C, a variable voltage selection circuit (VTEMP SEL) 105C, and a temperature code generation circuit (TCODE GEN) 107C. The first variable voltage generation circuit 101C may be located in the left region of the electronic device 205 and may generate a first variable voltage VTEMP1 corresponding to the internal temperature of the left region of the electronic device 205. The second variable voltage generation circuit 103C may be located in the central region of the electronic device 205 and may generate a second variable voltage VTEMP2 corresponding to the internal temperature of the central region of the electronic device 205. The variable voltage selection circuit 105C and the temperature code generation circuit 107C may be located in the right region of the electronic device 205. The first variable voltage generation circuit 101C, the second variable voltage generation circuit 103C, the variable voltage selection circuit 105C, and the temperature code generation circuit 107C may be implemented to be the same as the first variable voltage generation circuit 101, the second variable voltage generation circuit 103, the variable voltage selection circuit 105, and the temperature code generation circuit 107, respectively, and thus a detailed description of each configuration is omitted. Each of the left region of the electronic device 205 and the central region in the electronic device 205 may be implemented as one of the following regions: a region forming a plurality of logic circuits (not shown) for controlling internal operations, a region generating an internal clock, and a region forming a circuit for controlling signal transmission to an external device (not shown), but this is merely an example and the present disclosure is not limited thereto. The right region may be located in a second direction of the central region, and the second direction may be set in a direction opposite to the first direction.

[0057] In an embodiment, the electronic device 205 may be implemented to include the first variable voltage generation circuit 101C in the left region, the second variable voltage generation circuit 103C in the central region, and the variable voltage selection circuit 105C and the temperature code generation circuit 107C that receive the first variable voltage VTEMP1 and the second variable voltage VTEMP2 to generate a temperature code TCD, thereby reducing the layout area of the temperature sensor provided therein.

[0058] Figure 7 is a block diagram showing a configuration of a temperature sensor 30 according to an embodiment of the present disclosure.

[0059] As Figure 7 shown, the temperature sensor 30 may include a first variable voltage generation circuit (VTEMP1 GEN) 301_1 to an L-th variable voltage generation circuit (VTEMPL GEN) 301_L, a variable voltage selection circuit 305, and a temperature code generation circuit 307.

[0060] The first variable voltage generation circuit 301_1 can generate a first variable voltage VTEMP1 based on the sense activation signal S_EN. When the sense activation signal S_EN is activated, the first variable voltage generation circuit 301_1 can generate the first variable voltage VTEMP1 having a voltage level corresponding to the internal temperature of the first region. As an example, the first variable voltage generation circuit 301_1 can generate the first variable voltage VTEMP1 having a voltage level that increases as the internal temperature of the first region increases. The first variable voltage generation circuit 301_1 can send the first variable voltage VTEMP1 to the variable voltage selection circuit 305. According to an embodiment, a unity gain buffer (not shown) capable of amplifying the first variable voltage VTEMP1 can be provided between the first variable voltage generation circuit 301_1 and the variable voltage selection circuit 305, so that signal loss occurring when sending the first variable voltage VTEMP1 can be prevented or reduced.

[0061] The second variable voltage generation circuit 301_2 can generate a second variable voltage VTEMP2 based on the sense activation signal S_EN. When the sense activation signal S_EN is activated, the second variable voltage generation circuit 301_2 can generate the second variable voltage VTEMP2 having a voltage level corresponding to the internal temperature of the second region. As an example, the second variable voltage generation circuit 301_2 can generate the second variable voltage VTEMP2 having a voltage level that increases as the internal temperature of the second region increases. The second variable voltage generation circuit 301_2 can send the second variable voltage VTEMP2 to the variable voltage selection circuit 305. According to an embodiment, a unity gain buffer (not shown) capable of amplifying the second variable voltage VTEMP2 can be provided between the second variable voltage generation circuit 301_2 and the variable voltage selection circuit 305, so that signal loss occurring when sending the second variable voltage VTEMP2 can be prevented or reduced.

[0062] The third variable voltage generation circuit 301_3 can generate a third variable voltage VTEMP3 based on the sense activation signal S_EN. When the sense activation signal S_EN is activated, the third variable voltage generation circuit 301_3 can generate the third variable voltage VTEMP3 having a voltage level corresponding to the internal temperature of the third region. As an example, the third variable voltage generation circuit 301_3 can generate the third variable voltage VTEMP3 having a voltage level that increases as the internal temperature of the third region increases. The third variable voltage generation circuit 301_3 can send the third variable voltage VTEMP3 to the variable voltage selection circuit 305. According to an embodiment, a unity gain buffer (not shown) capable of amplifying the third variable voltage VTEMP3 can be provided between the third variable voltage generation circuit 301_3 and the variable voltage selection circuit 305, so that signal loss occurring when sending the third variable voltage VTEMP3 can be prevented or alleviated.

[0063] The L-th variable voltage generation circuit 301_L can generate an L-th variable voltage VTEMPL based on the sense activation signal S_EN. When the sense activation signal S_EN is activated, the L-th variable voltage generation circuit 301_L can generate the L-th variable voltage VTEMPL having a voltage level corresponding to the internal temperature of the L-th region. As an example, the L-th variable voltage generation circuit 301_L can generate the L-th variable voltage VTEMPL having a voltage level that increases as the internal temperature of the L-th region increases. The L-th variable voltage generation circuit 301_L can send the L-th variable voltage VTEMPL to the variable voltage selection circuit 305. According to an embodiment, a unity gain buffer (not shown) capable of amplifying the L-th variable voltage VTEMPL can be provided between the L-th variable voltage generation circuit 301_L and the variable voltage selection circuit 305, so that signal loss occurring when sending the L-th variable voltage VTEMPL can be prevented or alleviated.

[0064] The variable voltage selection circuit 305 can compare the first variable voltage V TEMP1 to the L-th variable voltage V TEMPL when the selection pulse S_PUL is generated, and select and output one of the first variable voltage V TEMP1 to the L-th variable voltage V TEMPL as the selected variable voltage V TEMP_S. As an example, when the second variable voltage V TEMP2 has the highest voltage level among the first variable voltage V TEMP1 to the L-th variable voltage V TEMPL, that is, when the internal temperature of the second region among the first region to the L-th region is the highest, the variable voltage selection circuit 305 can select and output the second variable voltage V TEMP2 as the selected variable voltage V TEMP_S. As another example, when the third variable voltage V TEMP3 has the lowest voltage level among the first variable voltage V TEMP1 to the L-th variable voltage V TEMPL, that is, when the internal temperature of the third region among the first region to the L-th region is the lowest, the variable voltage selection circuit 305 can be implemented to select and output the third variable voltage V TEMP3 as the selected variable voltage V TEMP_S.

[0065] After the temperature code activation signal TCD_EN is activated, every time the comparison pulse C_PUL is generated, the temperature code generation circuit 307 can compare the selected variable voltage V TEMP_S with the reference voltage VREF to generate the temperature code TCD. The temperature code generation circuit 307 can perform a counting operation during a comparison period in which the selected variable voltage V TEMP_S is generated at a voltage level higher than the reference voltage after the temperature code activation signal TCD_EN is activated. When it is determined as a result of the comparison operation performed by the comparison pulse C_PUL that the selected variable voltage V TEMP_S has a voltage level lower than the reference voltage VREF, the temperature code generation circuit 307 can generate the temperature code TCD.

[0066] Figure 7 The illustrated temperature sensor 30 can be different from Figure 1 the illustrated temperature sensor 10 including the first variable voltage generation circuit 101 and the second variable voltage generation circuit 103 that respectively generate the first variable voltage V TEMP1 and the second variable voltage V TEMP2 in that: the temperature sensor 30 includes the first variable voltage generation circuit 301_1 to the L-th variable voltage generation circuit 301_L that measure the internal temperature on L regions to respectively generate the first variable voltage V TEMP 1 to the L-th variable voltage V TEMPL.

[0067] Figure 8 is a block diagram showing the configuration of an embodiment of an electronic device 401 including Figure 7 the illustrated temperature sensor 30.

[0068] As Figure 8As shown, the electronic device 401 may include a first variable voltage generation circuit (VTEMP1 GEN) 301_1A, a second variable voltage generation circuit (VTEMP2 GEN) 301_2A, a third variable voltage generation circuit (VTEMP3 GEN) 301_3A, a variable voltage selection circuit (VTEMP SEL) 305A, and a temperature code generation circuit (TCODE GEN) 307A. The first variable voltage generation circuit 301_1A may be located in the central region of the electronic device 401 and may generate a first variable voltage VTEMP1 corresponding to the internal temperature of the central region of the electronic device 401. The second variable voltage generation circuit 301_2A may be located in the right region of the electronic device 401 and may generate a second variable voltage VTEMP2 corresponding to the internal temperature of the right region of the electronic device 401. The third variable voltage generation circuit 301_3A may be located in the left region of the electronic device 401 and may generate a third variable voltage VTEMP3 corresponding to the internal temperature of the left region of the electronic device 401. Each of the variable voltage selection circuit 305A and the temperature code generation circuit 307A may be located adjacent to the third variable voltage generation circuit 301_3A in the left region of the electronic device 401. The first variable voltage generation circuit 301_1A, the second variable voltage generation current 301_2A, the third variable voltage generation voltage 301_3A, the variable voltage selection circuit 305A, and the temperature code generation circuit 307A may respectively correspond to Figure 7 the first variable voltage generation circuit 301_1 to the L-th variable voltage generation circuit 301_L, the variable voltage selection circuit 305, and the temperature code generation circuit 307 included in the temperature sensor 30 shown. Accordingly, a detailed description of each component is omitted. Each of the left region of the electronic device 401, the right region of the electronic device 401, and the central region of the electronic device 401 may be implemented as one of the following regions: a region forming various logic circuits (not shown) for controlling internal operations, a region generating an internal clock, and a region forming a circuit for controlling signal transmission to an external device (not shown), but this is merely an example and the present disclosure is not limited thereto.

[0069] In an embodiment, the electronic device 401 may be implemented to include the first variable voltage generation circuit 301_1A in the central region, the second variable voltage generation circuit 301_2A in the right region, the third variable voltage generation circuit 301_3A in the left region, and the variable voltage selection circuit 305A and the temperature code generation circuit 307A that receive the first variable voltage VTEMP1, the second variable current VTEMP2, and the third variable current VTEMP3 to generate a temperature code TCD, thereby reducing the layout area of the temperature sensor provided therein.

[0070] Figure 9 is a block diagram showing a configuration of an embodiment of an electronic device 403 including a Figure 7 temperature sensor 30 shown.

[0071] As Figure 9 shown, the electronic device 403 may include a first variable voltage generation circuit (VTEMP1 GEN) 301_1B, a second variable voltage generation circuit (VTEMP2 GEN) 301_2B, a third variable voltage generation circuit (VTEMP3 GEN) 301_3B, a fourth variable voltage generation circuit (VTEMP4 GEN) 301_4B, a fifth variable voltage generation circuit (VTEMP5 GEN) 301_5B, a variable voltage selection circuit (VTEMP SEL) 305B, and a temperature code generation circuit (TCODE GEN) 307B. The first variable voltage generation circuit 301_1B may be located in the left region of the electronic device 403 and may generate a first variable voltage VTEMP1 corresponding to the internal temperature of the left region of the electronic device 403. The second variable voltage generation circuit 301_2B may be located in the upper region of the electronic device 403 and may generate a second variable voltage VTEMP2 corresponding to the internal temperature of the upper region of the electronic device 403. The third variable voltage generation circuit 301_3B may be located in the central region of the electronic device 403 and may generate a third variable voltage VTEMP3 corresponding to the internal temperature of the central region of the electronic device 403. The fourth variable voltage generation circuit 301_4B may be located in the right region of the electronic device 403 and may generate a fourth variable voltage VTEMP4 corresponding to the internal temperature of the right region of the electronic device 403. The fifth variable voltage generation circuit 301_5B may be located in the lower region of the electronic device 403 and may generate a fifth variable voltage VTEMP5 corresponding to the internal temperature of the lower region of the electronic device 403. The variable voltage selection circuit 305B and the temperature code generation circuit 307B may be located in the lower region of the electronic device 403, adjacent to the fifth variable voltage generation circuit 301_5B. The first variable voltage generation circuit 301_1B, the second variable voltage generation circuit 301_2B, the third variable voltage generation circuit 301_3B, the fourth variable voltage generation circuit 301_4B, the fifth variable voltage generation circuit 301_5B, the variable voltage selection circuit 305B, and the temperature code generation circuit 307B may respectively correspond to Figure 7The first variable voltage generation circuit 301_1 to the L-th variable voltage generation circuit 301_L, the variable voltage selection circuit 305, and the temperature code generation circuit 307 included in the temperature sensor 30 shown are provided. Thus, detailed descriptions of each component are omitted. Each of the upper region, the lower region, the left region, the right region, and the central region of the electronic device 403 may be implemented as one of the following regions: a region forming a variety of logic circuits (not shown) for controlling internal operations, a region generating an internal clock, and a region forming a circuit for controlling signal transmission to an external device (not shown), but this is merely an example and the present disclosure is not limited thereto. The upper region may be located in the third direction with respect to the central region, the lower region may be located in the fourth direction with respect to the central region, the third direction may be set in a direction opposite to the fourth direction, and each of the third direction and the fourth direction may be set to be orthogonal to the first direction and the second direction.

[0072] In an embodiment, the electronic device 403 may be implemented to include the first variable voltage generation circuit 301_1B in the left region, the second variable voltage generation circuit 301_2B in the upper region, the third variable voltage generation circuit 301_3B in the central region, the fourth variable voltage generation circuit 301_4B in the right region, the fifth variable voltage generation circuit 301_5B in the lower region, and include a variable voltage selection circuit 305B and a temperature code generation circuit 307B that receive the first variable voltage VTEMP1, the second variable voltage VTEMP2, the third variable voltage VTEMP 3, the fourth variable voltage VTEMP4, and the fifth variable voltage VTEMP5 to generate a temperature code TCD, thereby reducing the layout area of the temperature sensor provided therein.

[0073] Concepts have been disclosed in connection with some embodiments as described above. Those skilled in the art will understand that various modifications, additions, and substitutions are possible without departing from the scope and spirit of the present disclosure. Therefore, the embodiments disclosed in this specification should be considered from an illustrative rather than a restrictive perspective. The scope of the concepts is not limited to the above description but is defined by the appended claims, and all different features within the equivalent scope should be construed as being included in the concepts.

Claims

1. A temperature sensor, comprising: A variable voltage selection circuit, which: when a selection pulse is generated, compares a first variable voltage with a second variable voltage to generate a selected variable voltage, wherein the voltage level of the first variable voltage corresponds to the internal temperature of a first region, and the voltage level of the second variable voltage corresponds to the internal temperature of a second region; and A temperature code generation circuit, which: after a temperature code activation signal is activated, compares the selected variable voltage with a reference voltage each time a comparison pulse is generated to generate a temperature code.

2. The temperature sensor according to claim 1, wherein, The variable voltage selection circuit receives the selection pulse generated after a sense activation signal is activated for a temperature sensing operation.

3. The temperature sensor according to claim 1, wherein, The variable voltage selection circuit selects and outputs the variable voltage with the higher voltage level among the first variable voltage and the second variable voltage as the selected variable voltage.

4. The temperature sensor according to claim 1, wherein, The variable voltage selection circuit selects and outputs the variable voltage with the lower voltage level among the first variable voltage and the second variable voltage as the selected variable voltage.

5. The temperature sensor according to claim 1, wherein, The variable voltage selection circuit includes: A selection signal generation circuit, which: when the selection pulse is generated, compares the first variable voltage with the second variable voltage to generate a selection signal; and A selector, which: based on the selection signal, selects and outputs one of the first variable voltage and the second variable voltage.

6. The temperature sensor according to claim 5, wherein, The selection signal generation circuit: When the voltage level of the first variable voltage is higher than the voltage level of the second variable voltage, generates the selection signal and sets the selection signal to have a first logic level, and When the voltage level of the second variable voltage is higher than the voltage level of the first variable voltage, generates the selection signal and sets the selection signal to have a second logic level.

7. The temperature sensor according to claim 1, wherein, The temperature code generation circuit receives the comparison pulses that are generated multiple times for a comparison operation after the selection pulse is generated and the temperature code activation signal is activated.

8. The temperature sensor according to claim 1, wherein, The temperature code generation circuit: During a comparison period, when the comparison pulse is generated, performs a counting operation to generate a count code, in the comparison period, the selected variable voltage is generated at a voltage level higher than the reference voltage, and When the selected variable voltage is generated at a voltage level equal to or lower than the reference voltage and the comparison pulse is generated, generates the temperature code based on the count code.

9. The temperature sensor according to claim 1, wherein, The temperature code generation circuit includes: A comparison circuit, which: each time the comparison pulse is generated, compares the selected variable voltage with the reference voltage to generate a comparison signal; A code control circuit, which: after a temperature code activation signal is activated, generates a preliminary temperature code and a latch clock based on the comparison signal; and A temperature code latch, which: latches the preliminary temperature code synchronously with the latch clock and outputs the latched preliminary temperature code as the temperature code.

10. The temperature sensor according to claim 9, wherein, The code control circuit includes: A counter, which: after the temperature code activation signal is activated, performs a counting operation to generate a count code; A code output circuit that: outputs the count code as the preliminary temperature code when the comparison signal is activated; and A latch clock generation circuit that: generates the latch clock when the comparison signal is activated.

11. A temperature sensor, comprising: A variable voltage selection circuit that: receives a plurality of variable voltages, each of the plurality of variable voltages being set to have a voltage level corresponding to the internal temperature of each of a plurality of regions; and selects and outputs the variable voltage having the highest voltage level among the variable voltages as the selected variable voltage; and A temperature code generation circuit that: after the temperature code activation signal is activated, compares the selected variable voltage with a reference voltage each time a comparison pulse is generated to generate a temperature code.

12. The temperature sensor according to claim 11, Among them, The plurality of regions include a first region, a second region, and a third region, wherein, the plurality of variable voltages include a first variable voltage, a second variable voltage, and a third variable voltage, and wherein, the variable voltage selection circuit: receives the first variable voltage, the voltage level of the first variable voltage corresponding to the internal temperature of the first region, receives the second variable voltage, the voltage level of the second variable voltage corresponding to the internal temperature of the second region, and receives the third variable voltage, the voltage level of the third variable voltage corresponding to the internal temperature of the third region.

13. The temperature sensor according to claim 12, wherein, The variable voltage selection circuit: when the internal temperature of the first region among the first region, the second region, and the third region is the highest, selects and outputs the first variable voltage as the selected variable voltage, when the internal temperature of the second region among the first region, the second region, and the third region is the highest, selects and outputs the second variable voltage as the selected variable voltage, and when the internal temperature of the third region among the first region, the second region, and the third region is the highest, selects and outputs the third variable voltage as the selected variable voltage.

14. The temperature sensor according to claim 11, wherein, The temperature code generation circuit receives the comparison pulses that are generated multiple times for a comparison operation after a selection pulse is generated and the temperature code activation signal is activated.

15. The temperature sensor according to claim 11, wherein, The temperature code generation circuit: during a comparison period, when the comparison pulse is generated, performs a counting operation to generate a count code, in the comparison period the selected variable voltage is generated at a voltage level higher than the voltage level of the reference voltage; and when the selected variable voltage is generated at a voltage level equal to or lower than the voltage level of the reference voltage and the comparison pulse is generated, generates the temperature code based on the count code.

16. An electronic device, comprising: A first variable voltage generation circuit that is located in a first region and generates a first variable voltage, the voltage level of the first variable voltage corresponding to the internal temperature of the first region; A second variable voltage generation circuit, which is located in a second region different from the first region and generates a second variable voltage, the voltage level of the second variable voltage corresponding to the internal temperature of the second region; A variable voltage selection circuit, which: when a selection pulse is generated, compares the first variable voltage with the second variable voltage to generate a selected variable voltage; and A temperature code generation circuit, which: after a temperature code activation signal is activated, compares the selected variable voltage with a reference voltage each time a comparison pulse is generated to generate a temperature code.

17. The electronic device according to claim 16, wherein, Each of the variable voltage selection circuit and the temperature code generation circuit is located in one of the first region and the second region.

18. The electronic device according to claim 16, wherein, Each of the variable voltage selection circuit and the temperature code generation circuit is located in a third region separately positioned from the first region and the second region.

19. An electronic device, comprising: A variable voltage selection circuit, which: selects and outputs the first measured one of a first variable voltage and a second variable voltage as a first selected variable voltage, and selects and outputs the second measured one of the first variable voltage and the second variable voltage as a second selected variable voltage; and A temperature code generation circuit, which: compares the first selected variable voltage with a reference voltage to generate a temperature code when the first selected variable voltage is received, and compares the second selected variable voltage with the reference voltage to generate the temperature code when the second selected variable voltage is received.

20. The electronic device according to claim 19, Among them, The first variable voltage has a voltage level corresponding to the internal temperature of a first region, and wherein the second variable voltage has a voltage level corresponding to the internal temperature of a second region.

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