Photoresist and photoetching defect detection device and method
By introducing fluorescent molecular groups into the photoresist and setting up a laser and a fluorescence detector in the lithography machine, the problem of low detection efficiency of photolithography defects is solved, and in-situ dynamic monitoring is realized during the lithography process, which improves detection efficiency and saves costs.
Patent Information
- Application Number
- CN202510398633.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-31
- Publication Date
- 2025-07-04
AI Technical Summary
In the prior art, the photolithography defect detection efficiency is low, and the optical automatic detection machine is prone to damage the photoresist, and the photolithography rework cannot be performed, making it cumbersome and time-consuming to investigate the causes of the defect.
The polymer resin structure of the photoresist is introduced to the fluorescent molecular groups, so that the excited fluorescent wavelength is in the yellow light and above band of the photoresist insensitive, and combined with a laser and a fluorescence detector to achieve in-situ dynamic defect detection in the lithography machine.
Defect detection without affecting lithography exposure is achieved, defect monitoring efficiency is improved, abnormal origins are accurately positioned, and manpower and material costs are saved for defect traceability.
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Figure CN120255287A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor integrated circuit manufacturing, and particularly to a photoresist. The present invention also relates to a photolithography defect detection device. The present invention also relates to a photolithography defect detection method. Background Art
[0002] With the rapid development of the semiconductor industry, advanced processes have been continuously reduced from the micron scale to the nanoscale. More refined patterns mean more complex and diverse defect detection technologies. Photolithography is a key process for generating patterns, and photolithography defect detection is particularly important.
[0003] The general process of current photolithography defect detection is to perform optical automatic defect detection after the exposure of the lithography machine and use an SEM machine for defect detection after etching. The defect detection rate of the optical automatic detection machine is low, the energy of the SEM machine is large and it is easy to damage the photoresist, and lithography rework cannot be performed. At the same time, investigate the possible causes of defects according to the defect situation, and if necessary, shut down the lithography machine for in-depth investigation. The whole process is cumbersome, lengthy, time-consuming and laborious. An advanced in-situ photolithography defect detection technology is urgently needed to be proposed. Summary of the Invention
[0004] The technical problem to be solved by the present invention is to provide a photoresist that can detect defects in the photoresist without affecting exposure, especially to realize in-situ dynamic monitoring of defects during the photolithography process. For this purpose, the present invention also provides a photolithography defect detection device. The present invention also provides a photolithography defect detection method.
[0005] To solve the above technical problem, the polymer resin structure of the photoresist provided by the present invention contains a fluorescent molecular group.
[0006] The wavelength of the fluorescence emitted by the excitation of the fluorescent molecular group is required to be in the yellow light and above bands to which the photoresist is insensitive.
[0007] A further improvement is that the wavelength of the fluorescence emitted by the excitation of the fluorescent molecular group is greater than 600 nm.
[0008] A further improvement is that the fluorescent molecular group has a fluorescence wavelength of 600 nm - 760 nm when irradiated with a laser having a wavelength of 620 nm - 650 nm.
[0009] A further improvement is that the photoresist is a non-chemically amplified photoresist or a chemically amplified photoresist.
[0010] A further improvement is that the non-chemically amplified photoresist includes I-line photoresist; the chemically amplified photoresist includes: 248, 193 and 193i photoresists.
[0011] A further improvement is that the material of the fluorescent molecular group includes: cyanines, fluoresceins, rhodamines, porphyrins.
[0012] To solve the above technical problems, the lithography defect detection device provided by the present invention includes:
[0013] A photoresist that contains a fluorescent molecular group in the polymer resin structure thereof.
[0014] The wavelength of the fluorescence emitted by the excitation of the fluorescent molecular group is required to be in the yellow light band and above to which the photoresist is insensitive.
[0015] A laser for emitting a laser for exciting the fluorescent molecular group;
[0016] A fluorescence detector for collecting the fluorescence excited by the fluorescent molecular group and forming a fluorescence image or fluorescence video.
[0017] A further improvement is that it includes: a data processor.
[0018] The data processor is used to process the fluorescence image or fluorescence video to determine whether there are defects.
[0019] A further improvement is that both the laser and the fluorescence detector are arranged in a lithography machine to achieve in-situ dynamic defect detection.
[0020] A further improvement is that the data processor is arranged in the lithography machine.
[0021] A further improvement is that the wavelength of the fluorescence emitted by the excitation of the fluorescent molecular group is greater than 600 nm.
[0022] A further improvement is that the wavelength of the laser emitted by the laser is between 620 - 650 nm.
[0023] The fluorescent molecular group has a fluorescence wavelength of 600 - 760 nm when irradiated with a laser having a wavelength of 620 nm to 650 nm.
[0024] A further improvement is that the photoresist is a non-chemically amplified photoresist or a chemically amplified photoresist.
[0025] A further improvement is that the non-chemically amplified photoresist includes I-line photoresist; the chemically amplified photoresist includes: 248, 193, and 193i photoresists.
[0026] A further improvement is that the material of the fluorescent molecular group includes: cyanines, fluoresceins, rhodamines, porphyrins.
[0027] A further improvement is that the fluorescence detector uses a super-resolution fluorescence microscope with a resolution of 10 nm to 60 nm.
[0028] A further improvement is that the data processor preliminarily determines whether there are defects by comparing the fluorescence image and the ideal image.
[0029] A further improvement is that the laser and the fluorescence detector are both provided in the exposure unit and the development unit of the lithography machine.
[0030] A further improvement is that the laser includes a solid-state diode laser and a helium-neon laser.
[0031] To solve the above technical problems, the lithography defect detection method provided by the present invention includes the following steps:
[0032] Step 1: Provide a photoresist, and a fluorescent molecular group is included in the polymer resin structure of the photoresist.
[0033] The wavelength of the fluorescence emitted by the excitation of the fluorescent molecular group is required to be in the yellow light band and above to which the photoresist is insensitive.
[0034] Step 2: Perform a lithography process using the photoresist.
[0035] Step 3: Collect a fluorescence image or a fluorescence image of the photoresist after the lithography process, including:
[0036] Irradiate the fluorescent molecular group with the laser emitted by the laser to excite fluorescence.
[0037] Use a fluorescence detector to collect the fluorescence excited by the fluorescent molecular group to form a fluorescence image or a fluorescence image, and perform defect detection according to the fluorescence image or the fluorescence image.
[0038] A further improvement is that in step 3, the data processor processes the fluorescence image or the fluorescence image to determine whether there are defects.
[0039] A further improvement is that the laser and the fluorescence detector are both provided in the lithography machine to realize in-situ dynamic defect detection.
[0040] A further improvement is that in step 3, the fluorescence detector collects the image information at a time point as the fluorescence image; or, the fluorescence detector collects the dynamic image within a time period as the fluorescence image;
[0041] A further improvement is that the data processor preliminarily determines whether there are defects by comparing the fluorescence image and the ideal image.
[0042] A further improvement is that when the preliminary judgment has defects, it further includes:
[0043] Dynamically collect the fluorescence image or fluorescence video in-situ to accurately analyze the cause of the defect.
[0044] In the present invention, a fluorescent molecular group is added to the polymer resin structure of the photoresist, and the wavelength of the fluorescence emitted by the excitation of the fluorescent molecular group is in the yellow light band and above to which the photoresist is insensitive. In this way, the photoresist is used for fluorescence monitoring and does not affect the exposure of the photoresist. Through fluorescence monitoring, defects in the photoresist can be detected at any time and any position. Therefore, the present invention can detect defects in the photoresist without affecting the exposure, especially can realize in-situ dynamic monitoring of defects during the lithography process, which can improve the lithography defect monitoring efficiency, accurately locate the abnormal origin efficiently, greatly save the human and material costs for defect tracing, and share the defect detection pressure of the entire manufacturing process. BRIEF DESCRIPTION OF THE DRAWINGS
[0045] The present invention will be further described in detail below with reference to the drawings and specific embodiments:
[0046] Figure 1 is a schematic diagram of the exposure of the photoresist in the embodiment of the present invention;
[0047] Figure 2 is a schematic diagram of the lithography defect detection device in the embodiment of the present invention;
[0048] Figure 3 is an example diagram of the data processor of the lithography defect detection device in the embodiment of the present invention processing the fluorescence image. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0049] As Figure 1 shown, it is a schematic diagram of the exposure of the photoresist 203 in the embodiment of the present invention; the polymer resin structure of the photoresist 203 in the embodiment of the present invention contains a fluorescent molecular group 102.
[0050] The wavelength of the fluorescence emitted by the excitation of the fluorescent molecular group 102 is required to be in the yellow light band and above to which the photoresist 203 is insensitive.
[0051] In the embodiment of the present invention, the wavelength of the fluorescence emitted by the excitation of the fluorescent molecular group 102 is greater than 600 nm. Preferably, the fluorescent molecular group 102 has a fluorescence wavelength of 600 nm - 760 nm when irradiated by a laser with a wavelength of 620 nm - 650 nm.
[0052] The photoresist 203 is a non-chemically amplified photoresist or a chemically amplified photoresist.
[0053] In some embodiments, the non-chemically amplified resist includes an I-line resist 203; the chemically amplified resist includes: 248, 193, and 193i resists 203.
[0054] In some embodiments, the material of the fluorescent molecular group 102 includes: cyanines, fluoresceins, rhodamines, porphyrins.
[0055] Figure 1 In the corresponding example, the resist 203 is a 248 nm resist 203, that is, a KrF resist 203, and the polymer resin structure uses a PHS resin, a polyhydroxystyrene resin.
[0056] It can be seen that in the resist 203 molecules 101a before exposure and the resist 203 molecules 101b after exposure, the fluorescent molecular group 102 does not change. Figure 1 In the example of, the fluorescent molecular group 102 uses a rhodamine-based fluorescent group.
[0057] Before exposure, the resist 203 molecules 101a have a protecting group 103. Figure 1 In, the protecting group 103 is t-butoxycarbonyl (t-BOC).
[0058] During the exposure process, the photoacid generator (PAG) generates an acid, i.e., H + under the action of light, i.e., hv; the acid causes the protecting group 103 to fall off.
[0059] After exposure, a hydroxyl group 104 is formed at the place where the protecting group 103 has fallen off, which makes the resist soluble in water.
[0060] In the embodiments of the present invention, a fluorescent molecular group 102 is added to the polymer resin structure of the resist 203, and the wavelength of the fluorescence emitted by the fluorescent molecular group 102 is in the yellow light and above bands to which the resist 203 is insensitive. In this way, the resist 203 can be used for fluorescence monitoring and does not affect the exposure of the resist 203. Through fluorescence monitoring, the detection of defects in the resist 203 can be achieved at any time and any position. Therefore, the embodiments of the present invention can analyze the defects in the resist 203 without affecting the exposure, especially can realize the in-situ dynamic monitoring of defects during the lithography process. In this way, the lithography defect monitoring efficiency can be improved, and the abnormal origin can be accurately located efficiently, greatly saving the manpower and material costs for defect tracing and sharing the defect detection pressure of the entire process.
[0061] Such as Figure 2 shown, is a schematic diagram of the lithography defect detection device according to the embodiments of the present invention; the lithography defect detection device according to the embodiments of the present invention includes:
[0062] The resist 203, with reference to Figure 1As shown, the polymer resin structure of the photoresist 203 contains a fluorescent molecular group 102.
[0063] The wavelength of the fluorescence emitted by the excited fluorescent molecular group 102 is required to be in the yellow light band and above to which the photoresist 203 is insensitive.
[0064] A laser 204 is used to emit a laser for exciting the fluorescent molecular group 102, and the excited laser is as shown by the arrow line corresponding to the label 205.
[0065] A fluorescence detector 207 is used to collect the fluorescence excited by the fluorescent molecular group 102 and form a fluorescence image or a fluorescence video. The fluorescence is as shown by the arrow line corresponding to the label 206.
[0066] It further includes: a data processor.
[0067] The data processor is used to process the fluorescence image or the fluorescence video to determine whether there are defects.
[0068] In an embodiment of the present invention, the laser 204 and the fluorescence detector 207 are both arranged in a lithography machine to realize in-situ dynamic defect detection.
[0069] The data processor is arranged in the lithography machine.
[0070] In an embodiment of the present invention, the data processor preliminarily determines whether there are defects by comparing the fluorescence image with an ideal image. As Figure 3 shown, it is an example diagram of the data processor of the lithography defect detection device in an embodiment of the present invention processing a fluorescence image; Figure 3 In the corresponding example, by comparing the fluorescence image corresponding to the label 301 with the ideal image corresponding to the label 302, for example, performing a logical subtraction, a defect image corresponding to the label 303 can be obtained.
[0071] The lithography machine is used to perform a lithography process. After the wafer 202 is coated with the photoresist 203, it will be placed on the support structure 201 of the corresponding lithography machine unit of the lithography machine. Different lithography machine units correspond to different steps in the lithography process, such as exposure and development. The lithography machine unit for performing exposure is an exposure unit, and the lithography machine unit for performing development is a development unit.
[0072] In an embodiment of the present invention, the laser 204 and the fluorescence detector 207 are both arranged in the exposure unit and the development unit of the lithography machine.
[0073] In an embodiment of the present invention, the wavelength of the fluorescence emitted by the excited fluorescent molecular group 102 is greater than 600 nm.
[0074] In some preferred embodiments, the laser wavelength emitted by the laser 204 is between 620 - 650 nm.
[0075] The laser includes a solid-state diode laser and a helium-neon laser.
[0076] The fluorescent molecular group 102 has a fluorescence wavelength of 600 - 760 nm when irradiated by a laser with a wavelength of 620 nm to 650 nm.
[0077] The photoresist 203 is a non-chemically amplified resist or a chemically amplified resist.
[0078] In some embodiments, the non-chemically amplified resist includes an I-line photoresist 203; the chemically amplified resist includes: 248, 193, and 193i photoresists 203.
[0079] In some embodiments, the material of the fluorescent molecular group 102 includes: cyanines, fluoresceins, rhodamines, porphyrins.
[0080] In some embodiments, the fluorescence detector 207 uses a super-resolution fluorescence microscope with a resolution of 10 nm to 60 nm.
[0081] As Figure 3 shown, in some examples, a helium-neon laser generator is added to the KrF machine platform where the fluorescent photoresist is applied, and the laser wavelength is between 620 - 650 nm; a super-resolution fluorescence microscopic detector is added with a resolution of 50 nm, and the detector can collect image information at a certain time point and also collect dynamic images within a period of time; a data processor is added to compare the captured fluorescence image with the ideal image to detect defects. In the lithography machine unit where defects are detected, in-situ dynamic images and video information are further collected to accurately analyze the causes of defects.
[0082] The lithography defect detection method according to the embodiments of the present invention includes the following steps:
[0083] Step 1: Provide a photoresist 203, and a fluorescent molecular group 102 is included in the polymer resin structure of the photoresist 203.
[0084] The wavelength of the fluorescence emitted by the excited fluorescent molecular group 102 is required to be in the yellow light band and above to which the photoresist 203 is insensitive.
[0085] Step 2: Perform a lithography process using the photoresist 203.
[0086] Step 3: Collect fluorescence images or fluorescence videos of the photoresist 203 that has undergone the lithography process, including:
[0087] The laser emitted by the laser 204 is used to irradiate the fluorescent molecular group 102 to excite fluorescence.
[0088] The fluorescence excited by the fluorescent molecular group 102 is collected by the fluorescence detector 207 to form a fluorescence image or a fluorescence video, and defect detection is performed according to the fluorescence image or the fluorescence video.
[0089] In the method of the embodiment of the present invention, in step three, the data processor is used to process the fluorescence image or the fluorescence video to determine whether there are defects.
[0090] Both the laser 204 and the fluorescence detector 207 are arranged in the lithography machine to realize in-situ dynamic defect detection.
[0091] In step three, the fluorescence detector 207 collects the image information at a time point as the fluorescence image; or, the fluorescence detector 207 collects the dynamic video within a time period as the fluorescence video;
[0092] Furthermore, the data processor preliminarily determines whether there are defects by comparing the fluorescence image with the ideal image.
[0093] When it is preliminarily determined that there are defects, it further includes:
[0094] In-situ dynamic collection of the fluorescence image or the fluorescence video is performed to accurately analyze the cause of the defects.
[0095] In the embodiment of the present invention, by adding a fluorescent molecular group to the photoresist resin, a photoresist that emits fluorescence with a wavelength of 600 - 760 nm under irradiation at a wavelength of 620 - 650 nm, that is, a fluorescent photoresist, is obtained. By adding a laser in the lithography machine and cooperating with a super-resolution fluorescence detection probe, in-situ dynamic defect detection during development and exposure can be realized. In the embodiment of the present invention, the fluorescence with a wavelength greater than 600 nm emitted by the fluorescent photoresist is in the yellow light band and above which the photoresist is insensitive. Without affecting exposure, it can in-situ dynamically monitor defects such as peeling, water mark, residual, droplet, scrape, splash, etc. that may occur in each link of coating and development, thereby improving the efficiency of photolithography defect detection, accurately positioning the abnormal origin efficiently, and greatly saving the labor and material costs in the debug process.
[0096] The above has described the present invention in detail through specific embodiments, but these do not constitute a limitation to the present invention. Without departing from the principle of the present invention, those skilled in the art can also make many deformations and improvements, which should also be regarded as the protection scope of the present invention.
Claims
1. A photoresist, characterized in that: A fluorescent molecular group is included in the polymer resin structure of the photoresist; The wavelength of the fluorescence emitted by the stimulated emission of the fluorescent molecular group is required to be in the yellow light and above wavelength bands to which the photoresist is insensitive.
2. The photoresist according to claim 1, wherein: The wavelength of the fluorescence emitted by the stimulated emission of the fluorescent molecular group is greater than 600 nm.
3. The photoresist according to claim 2, wherein: The fluorescent molecular group has a fluorescence wavelength of 600 nm to 760 nm when irradiated by a laser with a wavelength of 620 nm to 650 nm.
4. The photoresist according to claim 1, wherein: The photoresist is a non-chemically amplified photoresist or a chemically amplified photoresist.
5. The photoresist according to claim 4, characterized in that: The non-chemically amplified photoresist includes I-line photoresist; the chemically amplified photoresist includes: 248, 193, and 193i photoresists.
6. The photoresist according to claim 1, characterized in that: The materials of the fluorescent molecular group include: cyanine, fluorescein, rhodamine, porphyrin.
7. A lithography defect detection device, characterized in that, Including: A photoresist, in which a fluorescent molecular group is included in the polymer resin structure of the photoresist; The wavelength of the fluorescence emitted by the stimulated emission of the fluorescent molecular group is required to be in the yellow light and above wavelength bands to which the photoresist is insensitive; A laser for emitting a laser for exciting the fluorescent molecular group; A fluorescence detector for collecting the fluorescence excited by the fluorescent molecular group and forming a fluorescence image or fluorescence image.
8. The lithography defect detection device according to claim 7, wherein Including: A data processor; The data processor is used to process the fluorescence image or fluorescence image to judge whether there are defects.
9. The lithography defect detection device according to claim 7, wherein: The laser and the fluorescence detector are both arranged in the lithography machine to realize in-situ dynamic defect detection.
10. The lithography defect detection device according to claim 8, wherein: The data processor is arranged in the lithography machine.
11. The lithography defect detection device according to claim 7, wherein: The wavelength of the fluorescence emitted by the stimulated emission of the fluorescent molecular group is greater than 600 nm.
12. The lithography defect detection device according to claim 11, characterized in that: The wavelength of the laser emitted by the laser is between 620 - 650 nm; The fluorescent molecular group has a fluorescence wavelength of 600 nm to 760 nm when irradiated by a laser with a wavelength of 620 nm to 650 nm.
13. The lithography defect detection device according to claim 7, wherein: The photoresist is a non-chemically amplified photoresist or a chemically amplified photoresist.
14. The lithography defect detection device according to claim 13, characterized in that: The non-chemically amplified photoresist includes I-line photoresist; the chemically amplified photoresist includes: 248, 193, and 193i photoresists.
15. The lithography defect detection device according to claim 7, wherein: The materials of the fluorescent molecular group include: cyanine, fluorescein, rhodamine, porphyrin.
16. The lithography defect detection device according to claim 7, wherein: The fluorescence detector uses a super-resolution fluorescence microscope with a resolution of 10 nm to 60 nm.
17. The lithography defect detection device according to claim 8, wherein: The data processor preliminarily judges whether there are defects by comparing the fluorescence image with an ideal image.
18. The lithography defect detection device according to claim 9, wherein: The laser and the fluorescence detector are both arranged in the exposure unit and the development unit of the lithography machine.
19. The lithography defect detection device according to claim 12, wherein: The laser includes a solid-state diode laser and a helium-neon laser.
20. A lithography defect detection method, characterized in that, Including the following steps: Step 1: Provide a photoresist, in which a fluorescent molecular group is included in the polymer resin structure of the photoresist; The wavelength of the fluorescence emitted by the stimulated emission of the fluorescent molecular group is required to be in the yellow light and above wavelength bands to which the photoresist is insensitive; Step 2: Perform a lithography process using the photoresist; Step 3: Collect a fluorescence image or fluorescence image of the photoresist after the lithography process, including: Irradiating the fluorescent molecular group with the laser emitted by the laser to excite fluorescence; A fluorescence detector is used to collect the fluorescence excited by the fluorescent molecular group to form a fluorescence image or a fluorescence video, and defect detection is performed based on the fluorescence image or the fluorescence video.
21. The lithography defect detection method according to claim 20, wherein: In step three, the data processor is used to process the fluorescence image or the fluorescence video to determine whether there are defects.
22. The lithography defect detection method according to claim 21, wherein: Both the laser and the fluorescence detector are arranged in a lithography machine to achieve in-situ dynamic defect detection.
23. The lithography defect detection method according to claim 22, characterized in that: In step three, the fluorescence detector collects the image information at a time point as the fluorescence image; alternatively, the fluorescence detector collects the dynamic video within a time period as the fluorescence video.
24. The lithography defect detection method according to claim 23, wherein: The data processor preliminarily determines whether there are defects by comparing the fluorescence image with an ideal image.
25. The lithography defect detection method according to claim 24, wherein: When it is preliminarily determined that there are defects, it further includes: In-situ dynamic collection of the fluorescence image or the fluorescence video is performed to accurately analyze the cause of the defects.