Manufacturing method of semiconductor structure

Abstract

Embodiments of the present disclosure provide a bonding tool for bonding a die to a substrate and a method including positioning a substrate and a plurality of dies over a substrate support of the bonding tool wherein the plurality of dies are disposed on the substrate and the substrate is surrounded by an edge ring, a film of a bonding tool disposed over the substrate and the edge ring is expanded to expand the film downward with a polyether-ether-ketone (PEEK) layer attached to the film bearing against the edge ring, and a force is applied from the expanded film to the plurality of grains via the polyether-ether-ketone layer.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a method of manufacturing a semiconductor structure, and more particularly to a method of manufacturing a semiconductor structure using a bonding tool including a polymer layer to bond dies to a substrate. Background Art

[0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in integrated circuit materials and design have produced generations of integrated circuits, with each generation of circuits being smaller and more complex than the previous one. During the development of integrated circuits, the functional density (i.e., the number of interconnect devices per wafer area) has generally increased, while the geometric size (i.e., the smallest component (or line) that can be created using a manufacturing process) has decreased. This reduction in size generally brings benefits by increasing production efficiency and reducing related costs. This reduction in size also increases the complexity of integrated circuit processing and manufacturing.

[0003] Therefore, there is a need to improve the processing and manufacturing of integrated circuits. Summary of the Invention

[0004] Embodiments of the present disclosure provide a method of manufacturing a semiconductor structure, including positioning a substrate and a plurality of dies above a substrate support of a bonding tool, wherein the dies are disposed on the substrate and the substrate is surrounded by an edge ring; expanding a film of the bonding tool disposed above the substrate and the edge ring to cause the film to expand downward, wherein a polyetheretherketone layer attached to the film abuts against the edge ring; and applying a force from the expanded film to the dies via the polyetheretherketone layer.

[0005] Embodiments of the present disclosure provide a method of manufacturing a semiconductor structure, including positioning a substrate and a plurality of dies above a substrate support of a bonding tool, wherein the dies are disposed on the substrate and the substrate is surrounded by an edge ring; expanding a film of the bonding tool disposed above the substrate and the edge ring to cause the film to expand downward, wherein a polymer layer attached to the film abuts against the edge ring and when the film contracts, the diameter of the polymer layer is smaller than the diameter of the film; and applying a force from the expanded film to the dies via the polymer layer.

[0006] Embodiments of the present disclosure provide a method of manufacturing a semiconductor structure, including positioning a substrate and a plurality of dies above a substrate support of a bonding tool, wherein the dies are disposed on the substrate and the substrate is surrounded by an edge ring; placing a polymer layer and a release film on the edge ring, wherein the gap between the top surface of one of the dies and the bottom surface of the release film is in the range of about 80 μm to about 120 μm; and expanding a film of the bonding tool disposed above the substrate and the edge ring to apply a force to the dies via the polymer layer. Description of the Drawings

[0007] With reference to the following detailed description and in conjunction with the accompanying drawings, the concepts of the embodiments of the present disclosure can be better understood. It should be noted that, in accordance with the standard practice in the industry, the various features in the drawings are not necessarily drawn to scale. In fact, the dimensions of the various features may be arbitrarily enlarged or reduced for clear illustration. Similar reference numerals denote similar features throughout the specification and the drawings.

[0008] Figures 1A to 1E A schematic diagram showing the various stages of bonding a die to a substrate according to some embodiments of the present disclosure.

[0009] Figure 2 A flowchart showing a method of bonding a die to a substrate according to some embodiments of the present disclosure.

[0010] Figure 3 A perspective view showing a thin film assembly according to some embodiments of the present disclosure.

[0011] Figure 4 A partial cross-sectional view showing the expanded state of bonding a die to a substrate according to some embodiments of the present disclosure.

[0012] Figure 5 A partial cross-sectional schematic view showing the force application state of bonding a die to a substrate according to some embodiments of the present disclosure.

[0013] Figures 6A to 6E A schematic diagram showing a method of bonding a die to a substrate according to some embodiments of the present disclosure.

[0014] Figure 7 A flowchart showing an alternative method of bonding a die to a substrate according to some embodiments of the present disclosure.

[0015] Figure 8 A cross-sectional schematic view showing the first bonding step of forming a semiconductor device package according to some embodiments of the present disclosure.

[0016] Figure 9 A cross-sectional schematic view showing the second bonding step of forming a semiconductor device package according to some embodiments of the present disclosure.

[0017] Among them, the reference numerals are explained as follows:

[0018] 100: Bonding tool

[0019] 102: Lower tray

[0020] 104: Upper tray

[0021] 106: Sealing ring

[0022] 108: Processing area

[0023] 110: Base support

[0024] 112: Edge ring

[0025] 114: Film

[0026] 116: Polymer layer

[0027] 118: Substrate

[0028] 120: Grain

[0029] 122: Release film

[0030] 124: Controller

[0031] 126: Processor

[0032] 128: Memory

[0033] 200: Method

[0034] 210, 220, 230, 240, 250, 260: Blocks

[0035] 300: Film assembly

[0036] 302: Flange

[0037] 304: Hole

[0038] 400: Expanded state

[0039] 402: Exterior

[0040] 404: Interior

[0041] 406: Top surface

[0042] 408: Bottom surface

[0043] 500: Force application state

[0044] 502: Structure

[0045] 600: Joining tool

[0046] 624: Controller

[0047] 626: Processor

[0048] 628: Memory

[0049] 700: Method

[0050] 710, 720, 730, 740: Blocks

[0051] 800: Semiconductor device package

[0052] 801: First crystal grain

[0053] 802: Temporary substrate

[0054] 804: Inner connection structure

[0055] 806: Substrate

[0056] 808, 812: Vertical gap

[0057] 810: Outer edge

[0058] 814, 816: Radial gap

[0059] 901: Second crystal grain

[0060] 902:Dummy structure

[0061] 904: Inner connection structure

[0062] 906: Substrate

[0063] 907: Carrier substrate

[0064] 908, 912: Vertical gap

[0065] 910: Outer edge

[0066] 914, 916: Radial gap

[0067] d0, d1: Diameter

[0068] d2: Inner diameter

[0069] F: Force

[0070] h1, h2d, h2s: Height

[0071] h2: Combined height

[0072] g1: Gap

[0073] P: Film pressure

[0074] t1, t2, t3: Thickness Detailed implementation mode

[0075] The following disclosure provides many different embodiments or examples for implementing different features of the embodiments of the present disclosure. Reference numerals and / or letters may be reused in the various examples described in the present disclosure. These repetitions are for the purpose of simplicity and clarity, and do not themselves indicate any relationship between the various embodiments and / or configurations disclosed. In addition, specific examples of components and configurations are described below to simplify the description of the embodiments of the present disclosure. Of course, these specific examples are only for illustration and not intended to limit the embodiments of the present disclosure. For example, in the following description, it is mentioned that the first feature is formed on or above the second feature, which means that it may include an embodiment in which the first feature and the second feature are in direct contact, and may also include an embodiment in which additional features are formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact.

[0076] In addition, spatially relative terms may be used herein. For example, "under", "below", "lower", "above", "higher" and similar terms are used to facilitate the description of the relationship between one element or feature shown in the drawings and another (some) element or feature. In addition to the orientation shown in the drawings, these spatially relative terms are intended to include different orientations of the device during use or operation. The device may be turned to different orientations (rotated 90 degrees or other orientations), and the spatially relative terms used herein may be interpreted in the same way accordingly.

[0077] Embodiments of the present disclosure provide a bonding tool for bonding a die to a substrate and related methods. According to the method described in the present disclosure, especially by using a polymer layer between the bonding tool film and the die to be bonded, the die yield determined by the wafer acceptance test (WAT) can be significantly improved. For example, the test shows that the die yield is increased by 10% to 20%, and can reach 95% to 100%. In addition, the method described in the present disclosure can reduce die shift and enhance the final bonding strength by about 0.5 J / m 2 order of magnitude.

[0078] Figures 1A to 1E A schematic diagram showing the various stages of bonding a die to a substrate according to some embodiments. Figure 2 A flowchart showing a method 200 for bonding a die to a substrate according to some embodiments. Refer to Figure 1A and Figure 2 (block 210), a substrate and a plurality of dies to be bonded to the substrate are transferred from a factory interface to a substrate support of a bonding tool by a robotic handler. As Figure 1AAs shown, the bonding tool 100 (e.g., a molding machine) includes a lower tray 102, an upper tray 104, and a sealing ring 106 located between the lower tray 102 and the upper tray 104. The lower tray 102 and / or the upper tray 104 can move away from and toward each other to open and close the bonding tool 100, respectively. For example, the lower tray 102 can move downward in a substantially vertical direction and / or the upper tray 104 can move upward in a substantially opposite vertical direction. The sealing ring 106 is configured to form an airtight seal and / or a fluid-tight seal between the lower tray 102 and the upper tray 104 when the lower tray 102 and the upper tray 104 are moved to a closed position of the bonding tool 100. The closed position is as shown in FIG. Figures 1A to 1E As shown. The sealing ring 106 may be an annular elastic seal (e.g., an O-ring seal). The processing area 108 is defined between and / or within the lower tray 102 and the upper tray 104 and is sealed by the sealing ring 106. The processing area 108 may be connected to processing equipment (e.g., a pump, a vacuum pump, an inert gas source, a valve, a sensor, and / or other equipment) attached to the bonding tool 100.

[0079] The lower tray 102 includes a substrate support 110 attached to the lower tray 102 and an edge ring 112 located on the substrate support 110. In some embodiments, the substrate support 110 and the edge ring 112 can be different elements attached together. For example, the edge ring 112 can be attached to the upper surface of the substrate support 110 away from the lower tray 102. In some other embodiments, the substrate support 110 and the edge ring 112 can be a single element. The upper tray 104 includes a film 114 (which may also be referred to as a "cushion" in the present disclosure) attached to the upper tray 104 and a polymer layer 116 attached to the film 114. The film 114 is disposed above the substrate support 110 and the edge ring 112. For example, the film 114 can be attached to the lower surface of the upper tray 104 facing the lower tray 102. Similarly, the polymer layer 116 can be attached to the lower surface of the film 114. Fitting Figures 1A to 1E and Figure 2The described process may be referred to as an "automatic processing" process because the polymer layer 116 is fixedly attached to the film 114 and is not handled by an operator during this process. The film 114 may be formed of a material that is highly elastic compared to the polymer layer 116. For example, the film 114 may mainly comprise silicone resin. The polymer layer 116 may be formed of a material different from that of the film 114. For example, the elasticity of the polymer layer 116 may be substantially less than the elasticity of the film 114 (e.g., the elasticity ratio between the film 114 and the polymer layer 116 may be greater than 10 times, e.g., within a range between about 10 times and about 100 times). The polymer layer 116 may mainly comprise polyetheretherketone (PEEK). Based on the elasticity difference between the film 114 and the polymer layer 116, the film 114 is configured to expand volumetrically to a much greater extent than the polymer layer 116. To address this difference, the polymer layer 11 may be attached to the film 114 by a bonding technique capable of withstanding the relative difference in expansion between the two materials.

[0080] Position the substrate 118 and the plurality of dies 120 above the substrate support 110. The plurality of dies 120 are disposed on the substrate 118. For example, the plurality of dies 120 may be positioned on the top surface of the substrate 118 away from the substrate support 110. The substrate 118 is surrounded by an edge ring 112. The film 114 is disposed above the substrate 118 and the edge ring 112. As Figure 1A shown, the edge ring 112 extends above the plurality of dies 120. For example, as will be described in more detail below, the height of the edge ring 112 is substantially greater than the combined height of one of the substrate 118 and the plurality of dies 120.

[0081] The substrate 118 may comprise a semiconductor substrate, such as a wafer, a chip, a system on chip (SoC), or a system on integrated chip (SoIC), etc. The plurality of dies 120 may comprise semiconductor dies to be attached to a semiconductor substrate (such as a wafer, a chip, an SoC, or an SoIC, etc.). The plurality of dies 120 may be configured relative to the substrate 118 according to the device layout to be formed using a wafer bonding process. For example, the plurality of dies 120 may be spaced apart across the diameter of the entire substrate 118.

[0082] The lower tray 102 and the upper tray 104 may each include a heating element capable of independently controlling the temperature of each of the lower tray 102 and the upper tray 104. In some embodiments, die bonding using the bonding tool 100 described in the present disclosure includes low-temperature annealing. For example, the temperature of each of the lower tray 102 and the upper tray 104 may be in the range of between about 130°C and about 150°C, such as about 140°C. In some embodiments, the temperature of each of the lower tray 102 and the upper tray 104 may be set to the process temperature for bonding a plurality of dies 120 to the substrate 118. In some embodiments, the glass transition temperature (Tc) of the material of the polymer layer 116 is in the range of between about -40°C and about +30°C relative to the process temperature, such as in the range of between about -30°C and about +20°C relative to the process temperature, such as in the range of between about -20°C and about +10°C relative to the process temperature, such as in the range of between about -10°C and about +10°C relative to the process temperature. Thus, in some embodiments, the material of the polymer layer 116 is determined by the process temperature of the die bonding process. If the glass transition temperature of the material of the polymer layer 116 is significantly greater than the process temperature, such as higher than the process temperature by about 50°C, the polymer layer 116 may break under the action of the force F applied by the film 114. On the other hand, if the glass transition temperature of the material of the polymer layer 116 is significantly lower than the process temperature, such as lower than the process temperature by about 50°C, the polymer layer 116 may become too soft to uniformly transfer the force F to the plurality of dies 120.

[0083] As Figure 1AAs shown, the release film 122 is positioned (e.g., suspended) between the polymer layer 116 and the plurality of dies 120. The release film 122 may be formed of a material that does not adhere to the polymer layer 116, the substrate 118, or the plurality of dies 120. For example, in the absence of the release film 122, the polymer layer 116 may be prone to adhering to and damaging the substrate 118 and / or the plurality of dies 120 during the die bonding process. The release film 122 may be a plastic material different from the polymer layer 116. For example, the release film 122 may mainly include polytetrafluoroethylene (PTFE). In some embodiments, the release film 122 is a low friction material (e.g., characterized by a smooth and / or slippery texture). In some embodiments, the glass transition temperature of the release film 122 may be in the range of between about 2 times and about 5 times compared to the glass transition temperature of the polymer layer 116. The release film 122 may be used only once and is configured to be replaced after each bonding step. For example, a roll of the release film 122 may be located at one end of the processing area 108, and the release film 122 is pulled across the processing area 108 to the opposite end of the processing area 108. The release film 122 may be pulled by any device (e.g., a roller). In some embodiments, after each die bonding process, the used release film 122 is pulled away from the processing area 108, and a new release film 122 from the above roll is positioned above the substrate support 110.

[0084] Referring to Figure 1B and Figure 2 (block 220), the film 114 is inflated to expand the film 114 and the polymer layer 116 attached to the film 114 downward toward the substrate 118. When the film 114 is inflated, the vertical distance between the bottom surface of the polymer layer 116 and the top surface of the edge ring 112 decreases. During the inflation of the film 114, the polymer layer 116 contacts the release film 122. After contacting the polymer layer 116, the release film 122 and the polymer layer 116 move downward together toward the substrate 118. When the film 114 is inflated to reach a threshold volume (or threshold pressure), the polymer layer 116 contacts the edge ring 112 (e.g., via the release film 122), as Figure 1BAs shown. At this stage, the polymer layer 116 abuts against the edge ring 112, and the release film 122 is disposed between the polymer layer 116 and the edge ring 112. For example, the diameter of the polymer layer 116 can be greater than the inner diameter of the edge ring 112 such that the outer portion of the polymer layer 116 overlaps and abuts against the inner portion of the edge ring 112. In some embodiments, the film 114 can be inflated by providing pressurized gas (such as an inert gas or air) within the film 114. For example, the inflation of the film 114 can be based on the pressure difference between the film 114 and the processing area 108. The upper tray 104 of the bonding tool 100 can include one or more gas connectors located therein, which are in fluid communication between the interior of the film 114 and an inflation device (such as a pump, a vacuum pump, a pressurized gas source, a valve, a sensor, and / or other devices) attached to the bonding tool 100.

[0085] When the polymer layer 116 first contacts the edge ring 112 via the release film 122, as Figure 1B shown, there is a gap between the top surface of one of the plurality of dies 120 and the bottom surface of the release film 122. In some embodiments, the gap can be in the range of about 80 μm to about 120 μm. The film 114 can continue to inflate after reaching the edge ring 112, causing the inner radial portion of the polymer layer 116 to pass through the gap (or closing the gap) to abut against the plurality of dies 120 and applying a force on the plurality of dies 120, which will be described in more detail below.

[0086] In some embodiments, inflating the film 114 by the block 220 can include a first vacuum process of reducing the pressure in the processing area 108 from atmospheric pressure (760 Torr) to about 5000 mTorr and a second vacuum process of further reducing the pressure to less than about 1000 mTorr (such as less than about 100 mTorr, such as in the range between about 10 mTorr and about 100 mTorr). When the pressure in the processing area 108 is reduced, the film 114 can be inflated simultaneously. In some embodiments, the above vacuum and inflation processes can be performed over a total time period in the range of about 2 minutes to about 6 minutes (such as in the range between about 3 minutes and about 5 minutes, such as about 4 minutes). In some embodiments, the first vacuum process can be performed over a first time period T1 in the range of about 30 seconds to about 90 seconds (such as about 60 seconds). In some embodiments, the second vacuum process and the inflation process that can be performed simultaneously can be performed over a second time period T2 in the range of about 2 minutes to about 4 minutes (such as about 3 minutes).

[0087] Referring to Figure 1C and Figure 2(Block 230), a force F is applied to the plurality of die 120 from the expansion film 114 via the polymer layer 116. For example, when the polymer layer 116 first contacts the plurality of die 120 through the release film 122, an initial force can be applied to the die 120. Then, as the pressure in the film 114 further rises, the force can be increased according to force = pressure x area until the pressure reaches and maintains the target pressure for applying the force F. In some embodiments, the time elapsed during the application of the initial force and the force accumulation up to (but not including) the force F can be considered part of the above-mentioned second time period T2. In some embodiments, after the force F is reached, the target pressure can be maintained, and the force F can be applied for a third time period T3 (e.g., about 25 minutes) within a range between about 20 minutes and about 30 minutes.

[0088] As described above, the polymer layer 116 can be formed of a substantially inelastic material. The force F from the film 114 pushes the polymer layer 116 towards the plurality of die 120. Although the material of the polymer layer 116 is substantially inelastic, the material of the polymer layer 116 softens at the process temperature (within plus or minus 50 °C of the glass transition temperature of the material of the polymer layer 116). For example, at the process temperature, the polymer layer 116 has limited ductility such that the polymer layer 116 can be shaped by the gap inside the edge ring 112. Thus, the portion of the polymer layer 116 located above the plurality of die 120 can uniformly fill the gap. In other words, even though the polymer layer 116 softens due to the process temperature, the inelastic property of the polymer layer 116 is beneficial for uniformly applying the force F on the plurality of die 120. For example, when the force F is applied to the plurality of die 120, the bottom surface of the inner radial portion of the polymer layer 116 can be substantially flat. In some embodiments, the force F can be set based on the process temperature of the bonding tool 100. For example, the force F may be positively correlated with the process temperature. A higher process temperature (e.g., T greater than the glass transition temperature) can make the polymer layer 116 more ductile (less brittle), whereby a greater force can be applied without causing the polymer layer 116 to rupture. Similarly, a lower process temperature (e.g., T less than the glass transition temperature) may cause the polymer layer 116 to be more brittle (less ductile), such that only a relatively small force can be applied on the plurality of die 120 to prevent the polymer layer 116 from rupturing. For example, when the process temperature is greater than the glass transition temperature of the polymer layer 116, the force F can be greater than 3000 kg, e.g., within a range between about 3000 kg and about 4000 kg. On the other hand, when the process temperature is less than the glass transition temperature of the polymer layer 116, the force F can be less than about 2000 kg, e.g., within a range between about 1000 kg and about 2000 kg.

[0089] As described above, the glass transition temperature of the material of the polymer layer 116 may not be significantly greater than or less than the process temperature, such as 50 °C higher or lower than the process temperature. If the glass transition temperature of the material of the polymer layer 116 is more than 50 °C higher than the process temperature, then during the die bonding process, the polymer layer 116 is too brittle or too hard at the process temperature. As such, the polymer layer 116 may crack. On the other hand, if the glass transition temperature of the material of the polymer layer 116 is more than 50 °C lower than the process temperature, then during the wafer bonding process, the polymer layer 116 is too flexible or too soft at the process temperature. As such, the force F from the thin film 114 may not be evenly applied to the plurality of dies 120 through the polymer layer 116. Accordingly, some of the dies 120 may not be bonded to the substrate 118.

[0090] Refer to Figure 1D and Figure 2 (block 240), shrink the thin film 114 to remove the force F from the plurality of dies 120 and return the polymer layer 116 to the point of initial contact (e.g., via the release film 122) with the edge ring 112, and the thin film 114 is in a threshold volume (the same state as Figure 1B ). When the polymer layer 116 is separated from the plurality of dies 120, the release film 122 is able to achieve complete separation. If the release film 122 is absent, one or more of the dies 120 may adhere to the polymer layer 116 and detach from the substrate 118. In some embodiments, the process of block 240 may be performed in a fourth time period T4 (e.g., about 90 seconds) in the range of between about 60 seconds and about 120 seconds.

[0091] Refer to Figure 1E and Figure 2 (block 250), further shrink the thin film 114 to retract the thin film 114 and the polymer layer 116 attached to the thin film 114 upward away from the substrate 118. In some embodiments, the further shrinkage of the thin film 114 in block 250 may be performed in conjunction with pressure venting of the processing area 108. When the thin film 114 shrinks, the vertical distance between the bottom surface of the polymer layer 116 and the top surface of the edge ring 112 increases until the thin film 114 returns to its original state (the same state as Figure 1A ). When the thin film 114 shrinks, the tension in the release film 122 causes the release film 122 to detach from the polymer layer 116. In some embodiments, the process of block 250 may be performed in a fifth time period T5 (e.g., about 90 seconds) in the range of between about 60 seconds and about 120 seconds.

[0092] Refer to Figure 2(Block 260), the substrate 118 and the plurality of dies 120 bonded to the substrate 118 are transferred from the substrate support 110 to the factory interface via a robotic handler. In some embodiments, the bonding tool 100 is communicatively coupled to and / or includes the controller 124( Figures 1A to 1E ). The controller 124 can be a workstation computer, a desktop computer, a laptop computer, a tablet computer, or any other type of computing device that includes one or more software products capable of controlling a process (e.g., based on input / output of some specific operating parameters), receiving process feedback, receiving test result data, making process adjustments, and / or other software-related control schemes. In some embodiments, the controller 124 includes a processor 126 and a memory 128. The processor 126 can include a central processing unit (CPU), a graphic processing unit (GPU), a microprocessor, and / or other processing units or elements. The memory 128 can be implemented as a computer-readable storage media (CRSM), which can be any available physical medium accessible by the processor 126 to execute instructions stored on the memory 128. The memory 128 can be capable of storing various computer-readable instructions for performing some of the operations described in this disclosure (e.g., operations of the controller 124). When the instructions are executed by the processor 126, these instructions can perform some of the operations described in this disclosure. The controller 124 can be communicatively coupled to and control the bonding tool 100 and various devices associated with the bonding tool 100 (e.g., robotic handlers, pumps, gas sources, valves, sensors, and other devices) to implement one or more aspects of the method 200. For example, the controller 124 can control the coordination Figure 2 of one or more of the process times (e.g., T1, T2, T3, T4, T5), temperature, pressure, force, and motion described. In some embodiments, the controller 124 can be configured to implement all of the blocks of the method 200 for bonding one or more dies to a substrate using the bonding tool 100.

[0093] Figure 3 A perspective view of a thin film assembly 300 according to some embodiments is shown. The thin film assembly 300 includes a thin film 114 to which a polymer layer 116 is attached. The thin film assembly 300 can be attached to the upper tray 104 via a flange 302 that surrounds an outer portion of the thin film 114. In some embodiments, the flange 302 can be formed of a metal (e.g., stainless steel). The flange 302 can include a plurality of holes 304 that are configured to receive corresponding fasteners (e.g., screws) that can be used to couple the thin film assembly 300 to the upper tray 104 via corresponding threaded holes in the upper tray 104(Figure 1A )。As Figure 3 shown, a plurality of holes 304 may be spaced apart from each other around the circumference of the flange 302. In some embodiments, the polymer layer 116 may be a disk that matches the shape of the edge ring 112 ( Figure 1A ). The diameter d1 of the polymer layer 116 may depend on the size of the bonding tool 100 ( Figure 1A ), and in particular on the size of the substrate that can fit within the bonding tool 100. For example, when the substrate is a 300 mm wafer, the diameter d1 of the polymer layer 116 may be in the range of between about 310 mm and about 360 mm. In another example, when the substrate is a 200 mm wafer, the diameter d1 of the polymer layer 116 may be in the range of between about 210 mm and about 260 mm. In another example, when the substrate is a 450 mm wafer, the diameter d1 of the polymer layer 116 may be in the range of between about 460 mm and about 510 mm. As Figure 3 shown, the polymer layer 116 is located at the radial center of the thin film 114 and the flange 302. There is an annular gap 306 between the flange 302 and the polymer layer 116. In some embodiments, the annular gap 306 may be in the range of between about 20 mm and about 45 mm.

[0094] Figure 4 A partial cross-sectional view showing the expanded state 400 of bonding the die 120 to the substrate 118 according to some embodiments. As Figure 4 shown, the expanded state 400 corresponds to the above-described mating Figure 1B and Figure 2 (box 220) where the thin film 114 expands to coincide with the initial contact point of the polymer layer 116 (via the spacer film 122) with the edge ring 112. As Figure 4 shown, the diameter d1 of the polymer layer 116 is generally smaller than the diameter d0 of the thin film 114 (e.g., when the thin film 114 contracts). As Figure 4 shown, the diameter d1 of the polymer layer 116 is greater than the inner diameter d2 of the edge ring 112 such that the outer portion 402 of the polymer layer 116 overlaps and bears against the inner portion 404 of the edge ring. In some embodiments, the diameter d1 of the polymer layer 116 may be 5% to 20% greater than the inner diameter d2 of the edge ring 112. As Figure 4As shown, there is a gap g1 between the top surface 406 of one of the plurality of die 120 and the bottom surface of the release film 122. In some embodiments, the gap gl can range from about 80 μm to about 120 μm, such as from about 90 μm to about 110 μm, such as about 100 μm. The size of the gap g1 can be conducive to applying the force F evenly on the plurality of die 120. For example, when the gap g1 is greater than about 120 μm, the angle of the effective force applied to one or more die toward the edge of the substrate 118 may be less than the required angle (e.g., because the outer portion 402 of the polymer layer 116 is held in place by abutting against the edge ring 112). On the other hand, in some embodiments, when the gap g1 is less than about 80 μm, the effective force applied to one or more die toward the center of the substrate 118 may be greater than the required force (e.g., greater than the threshold that may cause one or more die 120 to break). As Figure 4 shown, the gap g1 is based on the relationship of the height h1 of the edge ring 112 relative to the combined height h2 of the substrate 118 (height or thickness h2s) and the plurality of die 120 (height or thickness h2d). In other words, the gap g1 is the difference between the height h1 and the combined height h2. In some embodiments, the ratio of the height h1 to the combined height h2 can range from about 1.07 to about 1.11, such as about 1.09. In some embodiments, the height h1 of the edge ring 112 can be about 1.2 mm, and the combined height h2 can be about 1.1 mm (e.g., including the height h2s of the substrate 118 that can range from about 0.725 mm to about 0.775 mm and the height h2d of the plurality of die 120 that can range from about 0.325 mm to about 0.375 mm). In some embodiments, the ratio of the height h2s to the height h2d can range from about 1.9 to about 2.4, such as between about 2.1 and 2.2.

[0095] Figure 5 FIG. shows a partial cross-sectional schematic view of the force application state 500 for bonding the die 120 to the substrate 118 according to some embodiments. As Figure 5 shown, the force application state 500 is consistent with the above in conjunction with Figure 1C and Figure 2 described (block 230) where the polymer layer 116 contacts the plurality of die 120 (e.g., indirectly via the release film 122) and the film 114 expands to the target pressure of the applied force F. As Figure 5As shown, a film pressure P is applied to the back side of the film 114 remote from the polymer layer 116. In some embodiments, the thickness t1 of the film 114 may range between about 2 mm and about 4 mm, such as about 3 mm. The thickness t1 is the actual thickness of the film 114, rather than the thickness after the film 114 expands. In some embodiments, the thickness t2 of the polymer layer 116 may range between about 6 mm and about 10 mm, such as between about 7 mm and about 9 mm, such as about 8 mm. In some embodiments, the thickness t3 of the release film 122 may range between about 20 μm and about 80 μm, such as about 50 μm.

[0096] As Figure 5 shown, when a force F is applied to the plurality of die 120, the polymer layer 116 may be substantially flat. When the polymer layer 116 is substantially flat, the bottom surface 408 of the polymer layer 116 will be parallel to the top surface 406 of the die 120. Accordingly, the force F is mainly applied to the top surface 406 of the die 120 and in a direction generally perpendicular to the bonding interface between the die 120 and the substrate 118. This is advantageous for aligning the structure 502 and preventing displacement of the die 120 relative to the substrate 118, which can cause misalignment of the structure 502 (such as conductive features). This is a problem that may occur when using a conventional bonding tool not provided with the polymer layer described in the present disclosure. The dashed lines show an example of misalignment due to uneven application of the force.

[0097] Figures 6A to 6E A schematic diagram showing various stages of bonding a die to a substrate according to some embodiments. Figure 7 A flowchart showing an alternative method 700 for bonding a die to a substrate according to some embodiments. Aspects of method 700 that are the same as method 200 ( Figure 2 ) are denoted by reference numerals 210, 230, 240, and 260, and any description associated therewith is incorporated into method 700 without limitation. Referring Figure 7 (block 210), the substrate 118 and the plurality of die 120 to be bonded to the substrate 118 are transferred from the factory interface to the substrate support 110 of the bonding tool 600 via a robotic handler. Referring Figure 6A and Figure 7 (block 710), the bonding tool 600 is turned on and the polymer layer 116 is manually placed over the edge ring 112. The polymer layer 116 may be placed on the edge ring 112, while the release film 122 is disposed below the polymer layer 116. The process described in conjunction Figures 6A to 6E and Figure 7 may be referred to as a "manual handling" process because the polymer layer 116 is not attached to the film 114 but is handled by an operator during the process. Referring Figure 6B and Figure 7(Block 720), expand the membrane 114 of the bonding tool 600 to cause the membrane 114 to expand downward toward the substrate 118 and bond to the polymer layer 116. The process time points described in conjunction with block 220 above can be incorporated into block 720, but are not limited thereto. Refer to Figure 6C and Figure 7 (Block 230), apply a force F from the expanded membrane 114 through the polymer layer 116 to the plurality of die 120. Refer to Figure 6D and Figure 7 (Block 240), contract the membrane 114 to remove the force F from the plurality of die 120 and cause the polymer layer 116 to return to the point of initial contact with the edge ring 112 (e.g., via the release film 122), with the membrane 114 at a threshold volume (the same state as in FIG. 6). Refer to Figure 6E and Figure 7 (Block 730), further contract the membrane 114 to cause the membrane 114 to retract upward away from the substrate 118 and disengage from the polymer layer 116. The process time points described in conjunction with block 250 above can be incorporated into block 730, but are not limited thereto. Refer to Figure 7 (Block 740), open the bonding tool 600, manually remove the polymer layer 116 from the edge ring 112, and remove the used release film 122 from the processing area 108. Refer to Figure 7 (Block 260), transfer the substrate 118 and the plurality of die 120 bonded to the substrate 118 from the substrate support 110 to the factory interface via a robotic handler. The manual processing process requires stopping at two different time points in each cycle to place and remove the polymer layer. Thus, compared to the manual processing process ( Figure 7 ), the automated processing process ( Figure 2) can bring more efficient processes, shorter cycle times, and higher yields in the industry. In some embodiments, the bonding tool 600 is communicatively coupled to and / or includes a controller 624. The controller 624 can be a workstation computer, a desktop computer, a laptop computer, a tablet computer, or any other type of computing device including a software product having one or more software products capable of controlling a process (e.g., input / output based on some operating parameters), receiving process feedback, receiving test result data, making process adjustments, and / or other software-related control schemes. In some embodiments, the controller 624 includes a processor 626 and a memory 628. The processor 626 can include a central processing unit (CPU), a graphics processing unit (GPU), a microprocessor, and / or other processing units or elements. The memory 628 can be implemented as a computer-readable storage medium (CRSM), which can be any available physical medium accessible by the processor 626 to execute instructions stored on the memory 628. The memory 628 may be capable of storing various computer-readable instructions for performing some operations described in the present disclosure (e.g., operations of the controller 624). When the instructions are executed by the processor 626, the instructions can perform some operations described in the present disclosure. The controller 624 can be communicatively coupled to and control the bonding tool 600 and various devices associated with the bonding tool 600 (e.g., robotic handlers, pumps, gas sources, valves, sensors, and other devices) to implement one or more aspects of the method 700. For example, the controller 624 can control the cooperation Figure 7 of one or more of the described process time periods (e.g., T1, T2, T3, T4, T5), temperature, pressure, force, and motion. In some embodiments, the controller 624 can be configured to implement all blocks of the method 700 for bonding one or more dies to a substrate using the bonding tool 600.

[0098] Figure 8 A cross-sectional schematic view showing a first bonding step of forming a semiconductor device package 800 according to some embodiments. Figure 9 A cross-sectional schematic view showing a second bonding step of forming a semiconductor device package 800 according to some embodiments. The first bonding step and the second bonding step are exemplary illustrations of a process using a bonding tool 100 or a bonding tool 600 including a polymer layer 116 as described in the present disclosure. Referring to Figure 8 , the semiconductor device package 800 includes a temporary substrate 802 and a first die 801 bonded to the temporary substrate 802. The first die 801 can include a substrate 806 and an interconnect structure 804. In some embodiments, the first die 801 can be or include a central processing unit (CPU).

[0099] In some embodiments, due to the significant mismatch between the coefficients of thermal expansion (CTEs) of the materials of the first die 801, warping of the substrate 806 of the first die 801 may occur. For example, as Figure 8 shown, warping of the substrate 806 of the first die 801 may result in delamination, creating a vertical gap 808 around the outer edge 810 of the first die 801. Compared with the warping caused by die bonding without the polymer layer 116, the first bonding step with the polymer layer 116 as described in the present disclosure can reduce warping. The warping caused by die bonding without the polymer layer 116 may create a vertical gap 812 (shown as a dashed line). In some embodiments, the vertical gap 808 may range from about 11 μm to about 15 μm, while the vertical gap 812 may range from about 14 μm to about 19 μm. In some embodiments, using the polymer layer 116 can reduce warping by more than about 20%, such as about 20% to about 30%, such as about 30%. As Figure 8 shown, delamination caused by warping from the first bonding step may also include a radial gap 814 around the outer edge 810 of the first die 801. Compared with the radial gap 816 (shown as a dashed line, which is created by die bonding without the polymer layer 116), the radial gap 814 is reduced. In some embodiments, the radial gap 814 may be about 200 μm or less, such as in the range between about 0 μm and about 200 μm, such as between about 0 μm and 100 μm, such as about 0 μm, or between about 3 μm and about 20 μm, such as about 3 μm. In some embodiments, the radial gap 816 may be more than about 200 μm, such as in the range between about 200 μm and about 300 μm, such as about 300 μm.

[0100] As Figure 9As shown, a second bonding step forms a bond between the second die 901 and the first die 801. Similar to the first die 801, the second die 901 includes a substrate 906 and an interconnect structure 904, and the substrate 906 may have warpage. The warpage of the substrate 906 may cause delamination, resulting in the formation of a vertical gap 908 around the outer edge 910 of the second die 901. Compared with the warpage caused by bonding dies without the polymer layer 116, the second bonding step with the polymer layer 116 as described in the present disclosure can reduce warpage. The warpage caused by bonding dies without the polymer layer 116 may produce a vertical gap 912 (shown in dashed lines). In some embodiments, the vertical gap 908 may be in the range of about 4 μm to about 5.5 μm, while the vertical gap 912 may be in the range of about 5 μm to about 7 μm. In some embodiments, using the polymer layer 116 can reduce warpage by more than about 20%, such as about 20% to about 30%, such as about 30%. As Figure 9 As shown, the delamination caused by the warpage induced by the second bonding step may also include a radial gap 914 around the outer edge 910 of the second die 901. Compared with the radial gap 916, the radial gap 914 is reduced (shown in dashed lines, which is generated by bonding dies without the polymer layer 116). In some embodiments, the radial gap 914 may be less than about 100 μm, such as in the range of about 0 μm to about 100 μm, such as in the range of about 0 μm to 50 μm, such as about 0 μm, or in the range of about 3 μm to about 20 μm, such as about 3 μm. In some embodiments, the radial gap 916 may be more than about 100 μm, such as in the range of about 100 μm to about 200 μm, such as about 120 μm. The semiconductor device package 800 may include one or more dummy structures 902 located outside the second die 901 and a carrier substrate 907 located above the second die 901. In some embodiments, the second die 901 may be or include a static random-access memory (SRAM). After bonding the first die 801 and the second die 901, the temporary substrate 802 and the carrier substrate 907 may be removed, and the resulting package may be a chip-on-wafer (CoW) package.

[0101] Embodiments of the present disclosure provide a bonding tool for bonding wafers to a substrate and a method of using the same. In some embodiments, the method includes positioning a substrate and a plurality of dies above a substrate support of the bonding tool, wherein the dies are disposed on the substrate and the substrate is surrounded by an edge ring; expanding a thin film of the bonding tool disposed above the substrate and the edge ring to cause the thin film to expand downward, wherein a polyetheretherketone layer attached to the thin film bears against the edge ring; and applying a force from the expanded thin film to the dies via the polyetheretherketone layer.

[0102] In some embodiments, the height of the edge ring is greater than the combined height of one of the substrate and the die.

[0103] In some embodiments, the substrate support is attached to the lower tray of the bonding tool, and the film is attached to the upper tray of the bonding tool.

[0104] In some embodiments, the method further includes controlling the temperature of each of the upper tray and the lower tray, wherein the temperatures of the upper tray and the lower tray are configured to be independently controlled.

[0105] In some embodiments, the method further includes: maintaining the temperatures of the upper tray and the lower tray within a range of about -40°C to about +30°C relative to the glass transition temperature of the polyetheretherketone layer.

[0106] In some embodiments, the processing temperature of the bonding tool is higher than the glass transition temperature of the polyetheretherketone layer, and the force is in the range of about 3000 kg to about 4000 kg.

[0107] In some embodiments, the processing temperature of the bonding tool is lower than the glass transition temperature of the polyetheretherketone layer, and the force is in the range of about 1000 kg to about 2000 kg.

[0108] In some embodiments, a semiconductor manufacturing method includes positioning a substrate and a plurality of dies above a substrate support of a bonding tool, wherein the dies are disposed on the substrate and the substrate is surrounded by an edge ring; expanding a film of the bonding tool disposed above the substrate and the edge ring to cause the film to expand downward, wherein a polymer layer attached to the film bears against the edge ring, and when the film contracts, the diameter of the polymer layer is smaller than the diameter of the film; and applying a force from the expanded film to the dies via the polymer layer.

[0109] In some embodiments, the elasticity of the polymer layer is less than the elasticity of the film.

[0110] In some embodiments, expanding the film further includes bringing the bottom surface of the polymer layer into contact with a release film located between the polymer layer and the dies.

[0111] In some embodiments, the height of the edge ring is greater than the combined height of one of the substrate and the die.

[0112] In some embodiments, the height of the edge ring is about 80 μm to about 120 μm greater than the combined height of the substrate and the dies.

[0113] In some embodiments, the polymer layer includes polyetheretherketone.

[0114] In some embodiments, the diameter of the polymer layer is 5% to 20% larger than the inner diameter of the edge ring.

[0115] In some embodiments, a semiconductor manufacturing method includes positioning a substrate and a plurality of dies above a substrate support of a bonding tool, wherein the dies are disposed on the substrate and the substrate is surrounded by an edge ring; placing a polymer layer and a release film on the edge ring, wherein a gap between a top surface of one of the dies and a bottom surface of the release film is in a range of about 80 μm to about 120 μm; and expanding a thin film of the bonding tool disposed above the substrate and the edge ring to apply a force to the dies via the polymer layer.

[0116] In some embodiments, the polymer layer comprises polyetheretherketone.

[0117] In some embodiments, a diameter of the polymer layer is 5% to 20% larger than an inner diameter of the edge ring.

[0118] In some embodiments, the thin film comprises silicone.

[0119] In some embodiments, expanding the thin film further comprises: passing an inner radial portion of the polymer layer through the gap to abut against the die.

[0120] In some embodiments, a bottom surface of the inner radial portion of the polymer layer is flat when the force is applied to the die.

[0121] The features of many embodiments are outlined above so that those skilled in the art to which the present disclosure pertains can better understand the various embodiments of the present disclosure. Those skilled in the art to which the present disclosure pertains should understand that other processes and structures can be easily designed or changed based on the embodiments of the present disclosure to achieve the same purposes and / or attain the same advantages as the embodiments introduced herein. Those skilled in the art to which the present disclosure pertains should also understand that these equivalent structures do not depart from the concept and scope of the present disclosure. Various changes, substitutions, and alterations can be made to the embodiments of the present disclosure without departing from the concept and scope of the appended claims.

Claims

1. A method of manufacturing a semiconductor structure, comprising: Positioning a substrate and a plurality of dies above a substrate support of a bonding tool, wherein the plurality of dies are disposed on the substrate, and the substrate is surrounded by an edge ring; Expanding a film of the bonding tool disposed above the substrate and the edge ring to cause the film to expand downward, wherein a polyetheretherketone layer attached to the film bears against the edge ring; And Applying a force from the expanded film to the plurality of dies via the polyetheretherketone layer.

2. The method of manufacturing a semiconductor structure according to claim 1, wherein a height of the edge ring is greater than a combined height of one of the substrate and the plurality of dies.

3. The method of manufacturing a semiconductor structure according to claim 1, wherein the substrate support is attached to a lower tray of the bonding tool, and the film is attached to an upper tray of the bonding tool.

4. The method of manufacturing a semiconductor structure according to claim 3, further comprising controlling respective temperatures of the upper tray and the lower tray, wherein the temperature of the upper tray and the temperature of the lower tray are configured to be independently controlled.

5. The method of manufacturing a semiconductor structure according to claim 4, further comprising: Maintaining the temperature of the upper tray and the temperature of the lower tray within a range of about -40°C to about +30°C relative to a glass transition temperature of the polyetheretherketone layer.

6. The method of manufacturing a semiconductor structure according to claim 1, wherein a process temperature of the bonding tool is higher than a glass transition temperature of the polyetheretherketone layer, and the force is within a range of about 3000 kg to about 4000 kg.

7. The method of manufacturing a semiconductor structure according to claim 1, wherein a process temperature of the bonding tool is lower than a glass transition temperature of the polyetheretherketone layer, and the force is within a range of about 1000 kg to about 2000 kg.

8. A method of manufacturing a semiconductor structure, comprising: Positioning a substrate and a plurality of dies above a substrate support of a bonding tool, wherein the plurality of dies are disposed on the substrate, and the substrate is surrounded by an edge ring; Expanding a film of the bonding tool disposed above the substrate and the edge ring to cause the film to expand downward, wherein a polymer layer attached to the film bears against the edge ring, and when the film contracts, a diameter of the polymer layer is smaller than a diameter of the film; and Applying a force from the expanded film to the plurality of dies via the polymer layer.

9. The method of manufacturing a semiconductor structure according to claim 8, wherein the polymer layer has less elasticity than the film.

10. A method of manufacturing a semiconductor structure, comprising: Positioning a substrate and a plurality of dies above a substrate support of a bonding tool, wherein the plurality of dies are disposed on the substrate, and the substrate is surrounded by an edge ring; Placing a polymer layer and a release film on the edge ring, wherein a gap between a top surface of one of the plurality of dies and a bottom surface of the release film is within a range of about 80 μm to about 120 μm; and Inflate a membrane of the bonding tool disposed above the substrate and the edge ring to apply a force to the plurality of die via the polymer layer.

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