Stoll packaged MOS tube temperature test structure and manufacturing method thereof

Abstract

The present invention discloses a temperature testing structure and manufacturing method for a Stoll-packaged MOS tube. The MOS tube includes an electrode D, an electrode G, and an electrode S. The MOS tube is connected to a PCB test board for testing. The PCB test board is provided with a first groove for eliminating pin short-circuit faults and a second groove for thermocouple testing. The preparation method comprises S1, adding two grooves to the PCB test board; S2, arranging circuit wiring on the PCB test board using a Kelvin four-wire system. The present invention eliminates soldering problems after SMT. The circuit design and wiring of the entire PCB test board adopts a Kelvin four-wire system, solving the problem of inaccurate Rdson internal resistance between DSs of the MOS when monitoring device temperature online, thereby reducing errors.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, in particular to a temperature testing structure of a Stoll-packaged MOS tube and a manufacturing method thereof. Background Art

[0002] To ensure the reliability of MOS devices, a series of reliability tests are performed before they leave the factory. The type and conditions of reliability tests used vary depending on the device's operating environment, making on-board temperature testing of the device pins particularly important. High-temperature operating life testing for Stoll-packaged (7*8) MOS tubes is the most effective test for simulating and accelerating device lifespan. Different PCB test boards are designed for different MOS tube packages to ensure they can withstand high-temperature testing. The test duration varies depending on the device's application environment, but typically requires up to 1000 hours for applications in power systems.

[0003] Deficiencies of existing technology:

[0004] Currently, the Stoll package (7*8) temperature test board on the market is to attach the device to the PCB test board and reserve a temperature measurement point on the PCB board, which can indirectly realize the temperature test of the MOS single tube device, and reduce the accuracy error of the Rdson value in the monitoring test. In actual operation, the error will also be aggravated by temperature changes. Summary of the Invention

[0005] The object of the present invention is to provide a temperature testing structure for a Stoll-packaged MOS tube and a manufacturing method thereof, so as to solve the problems raised in the above-mentioned background technology.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a temperature testing structure for a Stoll-packaged MOS transistor, wherein the MOS transistor includes an electrode D, an electrode G, and an electrode S. The MOS transistor is connected to a PCB test board for testing, wherein the PCB test board is provided with a first groove for eliminating pin short circuit faults and a second groove for thermocouple testing;

[0007] The first groove is provided on the PCB test board corresponding to the electrode G and the electrode S;

[0008] The PCB test board is provided with two pads corresponding to the electrode D, and the second groove is provided between the two pads.

[0009] Preferably, the distance between the two pads is set to 0.5 mm.

[0010] The present invention further provides a method for manufacturing a temperature testing structure for a Stoll-packaged MOS tube, the manufacturing method specifically comprising the following steps:

[0011] S1. Add two grooves to the PCB test board;

[0012] S2. The PCB test board adopts the Kelvin four-wire method to set the circuit routing.

[0013] Preferably, the specific steps of step S1 include:

[0014] a1. Digging the first groove between the electrode G and the electrode S on the PCB test board;

[0015] a2. Disconnect the electrode D into two welding points and dig the second groove.

[0016] Preferably, the step S2 specifically includes the following steps:

[0017] b1. Two wiring paths are used for the electrodes of the PCB test board;

[0018] b2. Divide the electrode D into two independent pads, one of which corresponds to the power supply under test, and the other corresponds to the measurement under test. The electrodes G and S also use the same wiring method as the electrode D.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] The present invention provides a temperature test structure for a Stoll-packaged MOS tube and a manufacturing method thereof. The PCB test board is provided with a first groove for eliminating pin short-circuit faults and a second groove for thermocouple testing, thereby eliminating soldering problems after surface-mounted (SMT). The circuit design and routing of the entire PCB test board adopt a Kelvin four-wire system, which solves the problem of inaccurate Rdson internal resistance between the DS of the MOS when monitoring the device temperature online, thereby reducing errors. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a schematic diagram of the overall structure of the PCB test board of the present invention;

[0022] Figure 2 This is a schematic diagram of the top layer of the PCB test board of the present invention;

[0023] Figure 3 This is a schematic diagram of the bottom layer of the PCB test board of the present invention.

[0024] In the figure: 1, MOS tube; 2, PCB test board; 110, electrode D; 120, electrode G; 130, electrode S; 140, first groove; 150, second groove; 160, two pads. DETAILED DESCRIPTION

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0026] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0027] In the description of this patent, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "disposed" should be understood broadly. For example, they can refer to fixed connection or disposition, detachable connection or disposition, or integrated connection or disposition. Those skilled in the art will understand the specific meanings of the above terms in this patent based on the specific circumstances.

[0028] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "several" means two or more, unless otherwise specifically defined.

[0029] Example

[0030] See also Figure 1-3As shown, the present invention provides a technical solution for the temperature test structure of a Stoll-packaged MOS tube: the MOS tube 1 includes an electrode D110, an electrode G120, and an electrode S130. The MOS tube 1 is connected to a PCB test board 2 for testing. The PCB test board 2 is provided with a first groove 140 for eliminating pin short circuit faults and a second groove 150 for thermocouple testing. The first groove 140 is provided between the corresponding electrode G120 and the electrode S130 on the PCB test board 2. The first groove 140 increases the distance between the electrode G120 and the electrode S130, which can eliminate the pin short circuit fault after the MOS tube 1 is subsequently attached to the PCB test board 2. Two pads 160 are provided at the PCB test board 2 corresponding to the electrode D110. The second groove 150 is provided between the two pads 160 for testing the wiring of the temperature sensor line. The distance between the two pads 160 is set to 0.5 mm.

[0031] The present invention provides a method for manufacturing a temperature testing structure of a Stoll-packaged MOS tube, the manufacturing method comprising:

[0032] S1. Add two grooves to the PCB test board 2;

[0033] a1. Dig a first groove 140 between the corresponding electrode G120 and the electrode S130 on the PCB test board 2;

[0034] a2. Disconnect the electrode D110 into two welding points and dig a second groove 150;

[0035] S2 and PCB test board 2 use the Kelvin four-wire method to set the circuit routing;

[0036] b1. Two lines are used for the two electrodes of the corresponding PCB test board;

[0037] b2. Divide electrode D110 into two independent pads. One pad corresponds to the power supply under test, and the other pad corresponds to the measurement circuit under test. Electrodes G120 and S130 use the same wiring method as electrode D110 to more accurately test the Rdson of MOS tube 1 itself and facilitate continuous monitoring of changes in the device's internal resistance under high temperature.

[0038] The working principle of the present invention is as follows:

[0039] Two additional grooves are added to PCB test board 2. A first groove 140 is dug between electrodes G120 and S130 on PCB test board 2. Electrode D110 is separated into two solder joints, and a second groove 150 is dug. PCB test board 2 uses a four-wire Kelvin system for circuit routing. Two routing paths are used for each electrode on PCB test board 2, dividing electrode D110 into two independent pads. One pad corresponds to the power supply under test, and the other pad corresponds to the measurement under test. Electrodes G120 and S130 use the same wiring method as electrode D110. This allows for more accurate testing of the Rdson of MOS tube 1 and facilitates continuous monitoring of changes in the device's internal resistance under high temperatures.

[0040] The above shows and describes the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are merely preferred examples of the present invention and are not intended to limit the present invention. Various changes and improvements may be made to the present invention without departing from the spirit and scope of the present invention. Such changes and improvements fall within the scope of the present invention. The scope of protection claimed in the present invention is defined by the appended claims and their equivalents.

Claims

1. The temperature test structure of the Stoll packaged MOS tube is characterized by: The MOS transistor (1) comprises an electrode D (110), an electrode G (120), and an electrode S (130); the MOS transistor (1) is connected to a PCB test board (2) for testing; the PCB test board (2) is provided with a first groove (140) for eliminating pin short circuit faults and a second groove (150) for thermocouple testing; The first groove (140) is provided between the electrode G (120) and the electrode S (130) corresponding to the PCB test board (2); The PCB test board (2) is provided with two pads (160) corresponding to the electrode D (110), and the second groove (150) is provided between the two pads (160).

2. The temperature test structure for a Stoll-packaged MOS tube according to claim 1, characterized in that: The distance between the two pads (160) is set to 0.5 mm.

3. The method for manufacturing a temperature test structure for a Stoll-packaged MOS transistor according to any one of claims 1 to 2, characterized in that: The manufacturing method specifically comprises the following steps: S1, adding two grooves to the PCB test board (2); S2. The PCB test board (2) uses a Kelvin four-wire system to set the circuit routing.

4. The method for manufacturing a temperature test structure for a Stoll-packaged MOS tube according to claim 3, characterized in that: The specific steps of step S1 include: a1. Digging the first groove (140) between the electrode G (120) and the electrode S (130) on the PCB test board (2); a2. Disconnect the electrode D (110) into two welding points and dig the second groove (150).

5. The method for manufacturing a temperature test structure for a Stoll-packaged MOS tube according to claim 3, characterized in that: The step S2 specifically includes the following steps: b1. Two wiring paths are used for the electrodes of the PCB test board (2); b2. The electrode D (110) is divided into two independent pads, one of which corresponds to the power supply under test, and the other pad corresponds to the measurement under test. The electrode G (120) and the electrode S (130) also use the same wiring method as the electrode D (110).

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