Method and equipment for manufacturing small-size and small-spacing copper columns
By preparing through holes on the substrate and electroplating copper, combined with the use of the photoresist layer, the problems of deformation error and dimensional spacing in the preparation of copper columns are solved, and copper column manufacturing with high precision and good heat dissipation is achieved.
Patent Information
- Application Number
- CN202510204367.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-24
- Publication Date
- 2025-07-04
AI Technical Summary
The prior art is prone to deformation errors when preparing large-height copper columns, and the size and spacing of copper columns cannot be further reduced, affecting the fineness and heat dissipation.
By preparing through holes on the target substrate and electroplating copper, combined with the use of the photoresist layer, a plurality of photoresist holes are formed to connect the copper body corresponding to the through holes, and finally removing the multi-layer structure to obtain a copper column supported on the lower copper layer.
The deformation error of the copper column is greatly reduced, the size and spacing of the copper column is further reduced, and the fineness and heat dissipation of the copper column are improved.
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Figure CN120264587A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of circuit board packaging, and in particular to a method and device for manufacturing copper pillars with small size and small pitch. Background Art
[0002] In the prior art, traditional copper pillar preparation is carried out by directly filling photoresist on a substrate and then electroplating copper. However, the filling height of the photoresist on the substrate is limited. When large-height copper pillars need to be prepared, multiple stacking and filling of the photoresist are required. During the multiple stacking process, stacking misalignment is likely to occur, resulting in deformation of the electroplated copper pillars, causing large errors. Moreover, due to the limited resolution of the photoresist, that is, the aperture of the opening for electroplating is limited, the size of the prepared copper pillars cannot be further reduced, and the pitch between multiple copper pillars cannot be further reduced, affecting the fineness and heat dissipation of the copper pillars. Summary of the Invention
[0003] The main purpose of the embodiments of this application is to propose a method for manufacturing copper pillars with small size and small pitch, which can greatly reduce the deformation error of copper pillars during the process of preparing large-height copper pillars. At the same time, it can further reduce the size of copper pillars and the pitch between multiple copper pillars, improving the fineness and heat dissipation of copper pillars.
[0004] To achieve the above object, the first aspect of the embodiments of this application proposes a method for manufacturing copper pillars with small size and small pitch, including: Obtain a target substrate, where the target substrate includes an upper copper layer, an intermediate layer, and a lower copper layer; Prepare a plurality of through holes on the target substrate, and the through holes penetrate the upper copper layer, the intermediate layer, and the lower copper layer; Electroplate copper in each through hole of the target substrate; Prepare a first photoresist layer on the lower surface of the target substrate after the first electroplating, and prepare a second photoresist layer on the upper surface of the target substrate after the first electroplating, where the second photoresist layer includes a plurality of photoresist holes, and the positions of the photoresist holes correspond one-to-one to the positions of the through holes; Electroplate copper in each photoresist hole of the target substrate to connect the copper bodies in the photoresist holes with the copper bodies in the corresponding through holes; Remove the upper copper layer, the intermediate layer, the first photoresist layer, and the second photoresist layer of the target substrate after the second electroplating to obtain a plurality of target copper pillars supported on the lower copper layer.
[0005] Further, in one embodiment, preparing a plurality of through holes on the target substrate includes: Based on the perforation technology, prepare a plurality of through holes on the target substrate; Or, based on the development and etching technology, prepare a plurality of through holes on the target substrate.
[0006] Further, in one embodiment, based on a perforation technique, a plurality of through-holes are prepared on a target substrate, including: Determine a plurality of perforation positions in the target substrate; Perform punching treatment on each perforation position on the target substrate to obtain a plurality of through-holes; Alternatively, perform drilling treatment on each perforation position on the target substrate to obtain a plurality of through-holes.
[0007] Further, in one embodiment, photoresist is filled on the upper copper layer and the lower copper layer of the target substrate respectively; Determine a plurality of perforation positions in the target substrate, and determine a first photolithography pattern on the target substrate based on each perforation position; Based on the first photolithography pattern, perform exposure and development treatment on the photoresist on the upper copper layer to obtain a third photoresist layer, and the third photoresist layer includes a plurality of first photolithography holes; Based on the first photolithography pattern, perform exposure and development treatment on the photoresist on the lower copper layer to obtain a fourth photoresist layer, wherein the fourth photoresist layer includes a plurality of second photolithography holes, and the positions of the first photolithography holes correspond to the positions of the second photolithography holes; Through an etching process, perform etching treatment on the target substrate synchronously in each first photolithography hole and each second photolithography hole until each first photolithography hole is respectively connected to the second photolithography hole at the corresponding position to obtain a plurality of through-holes, and remove the third photoresist layer and the fourth photoresist layer.
[0008] Further, in one embodiment, obtaining the target substrate includes: Obtain an original substrate, and the material of the original substrate is a material that can be dissolved by acid or alkali; Take the original substrate as an intermediate layer, and electroplate a thin layer of copper on the upper surface and the lower surface of the target substrate respectively to obtain the target substrate.
[0009] Further, in one embodiment, preparing a first photoresist layer on the lower surface of the target substrate after the first electroplating includes: Fill photoresist on the lower surface of the target substrate after the first electroplating; Perform exposure and development treatment on the photoresist on the lower surface of the target substrate to obtain the first photoresist layer.
[0010] Further, in one embodiment, preparing a second photoresist layer on the upper surface of the target substrate after the first electroplating includes: Fill photoresist on the upper surface of the target substrate after the first electroplating; Determine a second photolithography pattern according to the positions of a plurality of through-holes; Based on the second photolithography pattern, perform exposure and development treatment on the photoresist on the upper surface of the target substrate to obtain the second photoresist layer.
[0011] Further, in one embodiment, the upper copper layer, the intermediate layer, the first photoresist layer, and the second photoresist layer of the target substrate after the second electroplating are removed to obtain a plurality of target copper pillars supported on the lower copper layer, including: The upper and lower surfaces of the target substrate after the second electroplating are polished until both the first photoresist layer and the second photoresist layer are completely exposed on the outer surface; Through an etching process, the first photoresist layer and the second photoresist layer are etched until both the upper copper layer and the lower copper layer are completely exposed on the outer surface; The upper copper layer is polished until the intermediate layer is completely exposed on the outer surface; Through an etching process, the intermediate layer is etched until the copper bodies in the photoresist holes and the copper bodies in the corresponding through holes are completely exposed on the outer surface, obtaining the target copper pillars.
[0012] Further, in one embodiment, the pitch between the respective target copper pillars is 60 micrometers to 100 micrometers, and the height of each target copper pillar is 0.4 millimeters or more.
[0013] To achieve the above object, a second aspect of the embodiments of the present application provides an electronic device, including: one or more processors; a memory storing one or more programs thereon, and when the one or more programs are executed by the one or more processors, the one or more processors implement the method for manufacturing copper pillars with small size and small pitch in the first aspect of the above embodiments.
[0014] To achieve the above object, a third aspect of the embodiments of the present application provides a storage medium, the storage medium is a computer-readable storage medium, and the storage medium stores a computer program, and when the computer program is executed by a processor, the method for manufacturing copper pillars with small size and small pitch in the first aspect of the above embodiments is implemented.
[0015] The embodiments of the present application have the following beneficial effects: By obtaining a target substrate, which includes an upper copper layer, an intermediate layer, and a lower copper layer, then preparing a plurality of through-holes on the target substrate, the through-holes penetrate the upper copper layer, the intermediate layer, and the lower copper layer. Next, copper is electroplated in each through-hole of the target substrate. Further, a first photoresist layer is prepared on the lower surface of the target substrate after the first electroplating, and a second photoresist layer is prepared on the upper surface of the electroplated target substrate. Among them, the second photoresist layer includes a plurality of photoresist holes, and the positions of the photoresist holes correspond one-to-one to the positions of the through-holes. Then, copper is electroplated in each photoresist hole of the target substrate so that the copper bodies in the photoresist holes are connected to the copper bodies in the corresponding through-holes. Finally, the upper copper layer, the intermediate layer, the first photoresist layer, and the second photoresist layer of the target substrate after the second electroplating are removed to obtain a plurality of target copper pillars supported on the lower copper layer. Furthermore, during the process of manufacturing copper pillars with a large height, the deformation error of the copper pillars can be significantly reduced. At the same time, the size of the copper pillars and the spacing between the plurality of copper pillars can be further reduced, improving the fineness and heat dissipation of the copper pillars. Description of the Drawings
[0016] Figure 1 is a flowchart of a method for manufacturing copper pillars with a small size and a small pitch provided by an embodiment of the present application; Figure 2 is a schematic structural diagram of a target substrate provided by an embodiment of the present application; Figure 3 is a schematic diagram of a through-hole in a target substrate provided by an embodiment of the present application; Figure 4 is a schematic structural diagram of a target substrate after the first electroplating provided by an embodiment of the present application; Figure 5 is a schematic structural diagram of a first photoresist layer and a second photoresist layer prepared on a target substrate provided by an embodiment of the present application; Figure 6 is a schematic structural diagram of electroplating copper in each photoresist hole of a target substrate provided by an embodiment of the present application; Figure 7 is a schematic structural diagram of a target copper pillar supported on a lower copper layer provided by an embodiment of the present application; Figure 8 is provided by an embodiment of the present application Figure 1 flowchart of step S120 in; Figure 9 is provided by an embodiment of the present application Figure 8 flowchart of step S810 in; Figure 10 is provided by an embodiment of the present application Figure 8 flowchart of step S820 in; Figure 11It is a schematic structural diagram of a third photoresist layer and a fourth photoresist layer formed after exposure and development processing of a target substrate provided by an embodiment of the present application; Figure 12 It is a schematic structural diagram of a target substrate after etching processing provided by an embodiment of the present application; Figure 13 It is provided by an embodiment of the present application Figure 1 The flowchart of step S110 in Figure 14 It is a flowchart of preparing a first photoresist layer on the lower surface of a target substrate provided by an embodiment of the present application; Figure 15 It is a flowchart of preparing a second photoresist layer on the upper surface of a target substrate provided by an embodiment of the present application; Figure 16 It is provided by an embodiment of the present application Figure 1 The flowchart of step S150 in Figure 17 It is a schematic hardware structure diagram of an electronic device provided by an embodiment of the present application. Detailed implementation manners
[0017] In order to make the objectives, technical solutions and advantages of the present application more clear and understandable, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.
[0018] In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms such as up, down, front, back, left, right, etc. is based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application.
[0019] It should also be noted that in the description of the present application, the meaning of several is more than one, the meaning of multiple is more than two, greater than, less than, exceeding, etc. are understood as not including the present number, and above, below, within, etc. are understood as including the present number. If the first and second are described only for the purpose of distinguishing technical features, they should not be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features or implicitly indicating the sequence relationship of the indicated technical features.
[0020] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present application belongs. The terms used herein are only for the purpose of describing the embodiments of the present application and are not intended to limit the present application.
[0021] In the description of this application, the descriptions with reference to terms such as "one embodiment", "an embodiment", "schematic embodiment", "example", "specific example", or "some examples" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of this application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.
[0022] In the prior art, traditional copper pillar preparation is carried out by directly filling photoresist on a substrate and then electroplating copper. However, the filling height of the photoresist on the substrate is limited. When large-height copper pillars need to be prepared, it is necessary to prepare them by stacking and filling the photoresist multiple times. And this method is prone to stacking misalignment during the multiple stacking process, which in turn causes the electroplated copper pillars to deform, resulting in large errors. Moreover, due to the limited resolution of the photoresist, that is, the aperture of the opening for electroplating is limited, it is impossible to further reduce the size of the prepared copper pillars, and it is also impossible to further reduce the spacing between multiple copper pillars, affecting the fineness and heat dissipation of the copper pillars.
[0023] Based on this, the embodiments of this application provide a method and device for manufacturing copper pillars with small size and small spacing. By obtaining a target substrate, the target substrate includes an upper copper layer, an intermediate layer, and a lower copper layer. Then, a plurality of through holes are prepared on the target substrate, and the through holes penetrate through the upper copper layer, the intermediate layer, and the lower copper layer. Next, copper is electroplated in each through hole of the target substrate. Further, a first photoresist layer is prepared on the lower surface of the target substrate after the first electroplating, and a second photoresist layer is prepared on the upper surface of the electroplated target substrate. Among them, the second photoresist layer includes a plurality of photoresist holes, and the positions of the photoresist holes correspond one-to-one to the positions of the through holes. Then, copper is electroplated in each photoresist hole of the target substrate so that the copper bodies in the photoresist holes are connected to the copper bodies in the corresponding through holes. Finally, the upper copper layer, the intermediate layer, the first photoresist layer, and the second photoresist layer of the target substrate after the second electroplating are removed to obtain a plurality of target copper pillars supported on the lower copper layer, thereby being able to greatly reduce the deformation error of the copper pillars during the process of preparing large-height copper pillars. At the same time, it is also possible to further reduce the size of the copper pillars and the spacing between multiple copper pillars, improving the fineness and heat dissipation of the copper pillars.
[0024] A method and device for manufacturing copper pillars with small size and small spacing provided by the embodiments of this application are specifically described through the following embodiments. First, a method for manufacturing copper pillars with small size and small spacing in the embodiments of this application is described.
[0025] Refer to Figure 1 as shown Figure 1It is a flowchart of a method for manufacturing copper pillars with small size and small pitch provided by an embodiment of the present application. The method for manufacturing copper pillars with small size and small pitch may include, but is not limited to, steps S110 to S160.
[0026] Step S110: Obtain a target substrate.
[0027] Among them, referring to Figure 2 as shown in Figure 2 is a schematic structural diagram of a target substrate provided by an embodiment of the present application. The target substrate includes an upper copper layer, an intermediate layer, and a lower copper layer.
[0028] Step S120: Prepare a plurality of through holes on the target substrate.
[0029] Among them, referring to Figure 3 as shown in Figure 3 is a schematic diagram of a through hole in a target substrate provided by an embodiment of the present application. The through hole penetrates through the upper copper layer, the intermediate layer, and the lower copper layer.
[0030] Specifically, obtain preset perforation position parameters, determine the perforation positions corresponding to each through hole on the target substrate according to the perforation position parameters, and prepare a plurality of through holes on the target substrate according to each perforation position.
[0031] Step S130: Electroplate copper in each through hole of the target substrate.
[0032] Among them, referring to Figure 4 as shown in Figure 4 is a schematic structural diagram of the target substrate after the first electroplating provided by an embodiment of the present application. Electroplating copper in the through hole is mainly through an electrochemical reaction to deposit a uniform and well-adhering copper layer on the inner wall of the through hole of the substrate. The specific process is as follows. Before electroplating, remove the oil or organic residues on the inner wall of the through hole and the surface of the substrate through a cleaning agent, and then slightly etch the inner wall surface through chemical treatment to form an active layer to increase the adhesion of the copper layer. Then, immerse the target substrate in an electroplating tank filled with an electroplating solution containing copper ions, and then under the action of an external electric field, the copper ions are reduced to metallic copper and gradually deposited on the inner wall of the through hole. Among them, an ideal copper layer thickness and uniformity can be obtained by precisely controlling the current density and electroplating time. After electroplating is completed, rinse the target substrate to remove the residual electroplating solution, and then perform drying and inspection.
[0033] Step S140: Prepare a first photoresist layer on the lower surface of the target substrate after the first electroplating, and prepare a second photoresist layer on the upper surface of the target substrate after the first electroplating.
[0034] Among them, referring to Figure 5 as shown in Figure 5FIG. 0 is a schematic structural diagram of preparing a first photoresist layer and a second photoresist layer on a target substrate according to an embodiment of the present application. The second photoresist layer includes a plurality of photoresist holes, and the positions of the photoresist holes correspond to the positions of the through holes one by one.
[0035] Specifically, the attached electroplating solution is removed from the target substrate after the first electroplating by a cleaning agent, and then the lower surface is subjected to micro-etching treatment to increase the surface roughness, thereby improving the adhesion of the photoresist material. Then, a prefabricated photoresist dry film is attached and heat-pressed on the lower surface of the target substrate to form a uniform and uncured first photoresist layer, and a prefabricated photoresist dry film is attached and heat-pressed on the upper surface of the target substrate to form a uniform and uncured second photoresist layer. After the coating is completed, the uncured first photoresist layer and the second photoresist layer are exposed and developed. Finally, the target substrate is placed in a high-temperature baking furnace for hard baking treatment to further cure the first photoresist layer and the second photoresist layer and enhance the chemical resistance and mechanical strength.
[0036] Step S150: Electroplate copper in each photoresist hole of the target substrate so that the copper body in the photoresist hole is connected to the copper body in the corresponding through hole.
[0037] Specifically, referring to Figure 6 as shown in Figure 6 FIG. 13 is a schematic structural diagram of electroplating copper in each photoresist hole of the target substrate according to an embodiment of the present application. Before electroplating, the oil stains or organic residues on the inner wall of the photoresist hole and the surface of the substrate are removed from the target substrate by a cleaning agent. Then, the target substrate is immersed in an electroplating bath filled with an electroplating solution containing copper ions. Then, under the action of an external electric field, the copper ions in the photoresist hole are reduced to metallic copper on the hole wall and the bottom and gradually deposited in the photoresist hole. Since the photoresist hole is connected to the through hole, the current is introduced into the photoresist hole through the copper body in the through hole until both the through hole and the photoresist hole are filled with copper, and then the electroplating is stopped. Finally, the target substrate is rinsed to remove the residual electroplating solution, and then dried and inspected.
[0038] It should be noted that the embodiment of the present application can alternately perform electroplating in the form of pulsed current, which helps to improve the uniformity of the coating, especially in deep holes or small holes. At the same time, during the electroplating process, the embodiment of the present application can also enhance the fluidity of the electroplating solution in the photoresist hole by stirring or liquid circulation to ensure the uniform growth of the copper layer in the hole.
[0039] Step S160: Remove the upper copper layer, the intermediate layer, the first photoresist layer and the second photoresist layer of the target substrate after the second electroplating to obtain a plurality of target copper columns supported on the lower copper layer.
[0040] Specifically, referring to Figure 7 as shown in Figure 7This is a schematic diagram of the structure in which a target copper column is supported on a lower copper layer provided by an embodiment of the present application. After removing the upper copper layer, the middle layer, the first photoresist layer and the second photoresist layer of the target substrate after the second electroplating, a plurality of target copper columns supported on the lower copper layer are obtained.
[0041] It should be noted that the target copper pillars with small size, small pitch and large height of the present application can be used as test probes for semiconductor chips. Multiple target copper pillars supported on the lower copper layer are inserted into the conduction nodes of the semiconductor chip to perform chip conduction testing.
[0042] Further, refer to Figure 8 As shown, Figure 8 This is an embodiment of the present application. Figure 1 In the flowchart of step S120, the method for manufacturing small-size and small-pitch copper pillars may include but is not limited to steps S810 to S820.
[0043] Step S810: Based on the perforation technology, a plurality of through holes are prepared on the target substrate.
[0044] Specifically, the surface of the target substrate is cleaned to remove impurities and oxide layers to ensure material uniformity and adhesion in the perforated area. According to the through-hole design, an appropriate perforation method is selected to perform perforations on the target substrate. After the perforation is completed, the carbides or burrs in the holes are cleaned to obtain multiple through holes.
[0045] Step S820: Alternatively, based on the development and etching technology, a plurality of through holes are prepared on the target substrate.
[0046] Specifically, the surface of the target substrate is cleaned to remove impurities and oxide layers to ensure material uniformity and adhesion in the perforated area. According to the through-hole design, holes are punched on the target substrate by developing and etching. After the perforation is completed, impurities in the holes are cleaned to obtain multiple through holes.
[0047] Further, refer to Figure 9 As shown, Figure 9 This is an embodiment of the present application. Figure 8 In the flowchart of step S810, the method for manufacturing small-size and small-pitch copper pillars may include but is not limited to steps S910 to S930.
[0048] Step S910: determining a plurality of through-hole positions in a target substrate.
[0049] Specifically, preset perforation position parameters are obtained, and the perforation positions corresponding to the respective through holes on the target substrate are determined according to the perforation position parameters.
[0050] Step S920: punching each perforation position on the target substrate to obtain a plurality of through holes.
[0051] Specifically, first, the accuracy of each perforation position is ensured through precise positioning technology; second, punching equipment and tools suitable for the substrate material are used to avoid cracks or burrs during the processing. After punching, the area around the perforations should be cleaned and inspected to ensure that the hole diameter meets the design specifications, and the edges are smooth and defect-free, obtaining a plurality of through-holes.
[0052] Step S930: Alternatively, drill holes at each perforation position on the target substrate to obtain a plurality of through-holes.
[0053] Specifically, first, the accuracy of each perforation position is ensured through precise positioning technology; second, the substrate is firmly fixed on the drilling workbench to ensure that it does not move or vibrate during the processing. Set appropriate drilling parameters according to the substrate material, including rotational speed, feed rate, drilling pressure, and coolant flow rate. Then, start the equipment and complete the drilling operations at each perforation position one by one according to the program. After drilling, use high-pressure gas, a brush, or ultrasonic waves to clean the burrs and debris inside the hole wall to obtain a plurality of through-holes.
[0054] Refer to Figure 10 as shown in Figure 10 is a flowchart of step S820 provided by an embodiment of the present application. The manufacturing method of the small-size and small-pitch copper pillars may include but is not limited to steps S1010 to S1040. Figure 8
[0055] Step S1010: Determine a plurality of perforation positions in the target substrate, and determine the first lithography pattern on the target substrate based on each perforation position.
[0056] Specifically, determine a plurality of perforation positions in the target substrate, and then combine the perforation distribution to determine the first lithography pattern that meets the process requirements, ensuring that the pattern boundary perfectly matches the perforation position and reserving a safe boundary area for lithography.
[0057] Step S1020: Based on the first lithography pattern, perform exposure and development processing on the photoresist on the upper copper layer to obtain the third photoresist layer.
[0058] Among them, the third photoresist layer includes a plurality of first lithography holes.
[0059] Specifically, convert the designed first lithography pattern into a lithography mask plate, then align the pattern on the lithography mask plate with the perforation positions on the upper copper layer of the target substrate, and then use an exposure device (such as a step exposure machine) for precise alignment. After ensuring that the lithography pattern completely coincides with the perforations, expose the target substrate. After exposure, immerse the target substrate in the developer solution to dissolve the exposed area and reveal the first lithography pattern, obtaining the third photoresist layer.
[0060] Step S1030: Based on the first lithography pattern, perform exposure and development on the photoresist on the lower copper layer to obtain a fourth photoresist layer.
[0061] Among them, the fourth photoresist layer includes a plurality of second lithography holes, and the positions of the first lithography holes correspond to the positions of the second lithography holes.
[0062] Specifically, convert the designed first lithography pattern into a lithography mask plate, then align the pattern on the lithography mask plate with the perforation positions on the lower copper layer of the target substrate, and then use an exposure device (such as a step exposure machine) for precise alignment. After ensuring that the lithography pattern completely coincides with the perforations, expose the target substrate. After the exposure is completed, immerse the target substrate in a developer solution to dissolve the exposed area and reveal the first lithography pattern, thereby obtaining the fourth photoresist layer.
[0063] It should be noted that, as shown in Figure 11 shown, Figure 11 is a schematic structural diagram of a target substrate after exposure and development to form a third photoresist layer and a fourth photoresist layer provided by an embodiment of the present application. At this time, the target substrate includes a third photoresist layer, an upper copper layer, an intermediate layer, a lower copper layer, and a fourth photoresist layer.
[0064] Step S1040: Through an etching process, synchronously etch the target substrate in each of the first lithography holes and each of the second lithography holes until each of the first lithography holes is respectively connected to the second lithography hole at the corresponding position, obtaining a plurality of through holes, and removing the third photoresist layer and the fourth photoresist layer.
[0065] Specifically, as shown in Figure 12 shown, Figure 12 is a schematic structural diagram of a target substrate after etching provided by an embodiment of the present application. Through an etching process, synchronously etch the target substrate in each of the first lithography holes and each of the second lithography holes until each of the first lithography holes is respectively connected to the second lithography hole at the corresponding position, obtaining a plurality of through holes. Finally, remove the third photoresist layer and the fourth photoresist layer.
[0066] As shown in Figure 13 shown, Figure 13 is a flowchart of step S110 provided by an embodiment of the present application. Figure 1 The method for manufacturing copper pillars with small size and small pitch may include, but is not limited to, steps S1310 to S1320.
[0067] Step S1310: Obtain a raw substrate.
[0068] Among them, the material of the raw substrate is a material that can be dissolved by acid or alkali.
[0069] Step S1320: Use the original substrate as the intermediate layer, and electroplate a thin layer of copper on the upper and lower surfaces of the target substrate respectively to obtain the target substrate.
[0070] Specifically, before electroplating, remove the oil or organic residues on the upper and lower surfaces of the original substrate with a cleaning agent, and then slightly etch the upper and lower surfaces through chemical treatment to form an active layer to increase the adhesion of the copper layer. Then, immerse the original substrate in an electroplating tank filled with an electroplating solution containing copper ions. Under the action of an external electric field, the copper ions are reduced to metallic copper and gradually deposited on the upper and lower surfaces. Among them, an ideal copper layer thickness and uniformity can be obtained by precisely controlling the current density and electroplating time. After electroplating is completed, rinse the original substrate to remove the residual electroplating solution, and then perform drying and inspection to obtain the target substrate.
[0071] Further, referring to Figure 14 as shown in Figure 14 FIG. is a flowchart of preparing a first photoresist layer on the lower surface of the target substrate provided by an embodiment of the present application. The manufacturing method of the copper pillars with small size and small pitch may include but is not limited to steps S1410 to S1420.
[0072] Step S1410: Fill photoresist glue on the lower surface of the target substrate after the first electroplating.
[0073] Specifically, fix the target substrate after the first electroplating on the support table of the photoresist coating equipment, ensure that its lower surface faces upward and is placed horizontally, then drop the photoresist glue onto the center of the lower surface of the substrate, and make the colloid evenly distributed by high-speed rotation. Finally, place the substrate filled with photoresist glue in a constant temperature oven and perform pre-baking according to the requirements of the photoresist glue.
[0074] Step S1420: Perform exposure and development processing on the photoresist glue on the lower surface of the target substrate to obtain the first photoresist layer.
[0075] Specifically, use an exposure device (such as a step exposure machine) to perform full exposure on the target substrate. After the exposure is completed, immerse the target substrate in the developer to obtain the first photoresist layer.
[0076] Further, referring to Figure 15 as shown in Figure 15 FIG. is a flowchart of preparing a second photoresist layer on the upper surface of the target substrate provided by an embodiment of the present application. The method may include but is not limited to steps S1510 to S1530.
[0077] Step S1510: Fill photoresist glue on the upper surface of the target substrate after the first electroplating.
[0078] Specifically, fix the target substrate after the first electroplating on the support table of the photoresist coating equipment, ensure that its lower surface faces upward and is placed horizontally, then drop the photoresist onto the center of the lower surface of the substrate, and make the colloid evenly distributed by high-speed rotation. Finally, place the substrate filled with photoresist in a constant-temperature oven and perform pre-baking according to the requirements of the photoresist.
[0079] Step S1520: Determine the second lithography pattern according to the positions of multiple through-holes.
[0080] Specifically, determine the positions of multiple perforations in the target substrate, and then determine the second lithography pattern that meets the process requirements in combination with the perforation distribution, ensure that the pattern boundary perfectly matches the perforation positions, and reserve a safety boundary area for lithography.
[0081] Step S1530: Based on the second lithography pattern, perform exposure and development processing on the photoresist on the upper surface of the target substrate to obtain a second photoresist layer.
[0082] Specifically, convert the designed second lithography pattern into a lithography mask, then align the pattern on the lithography mask with the perforation positions on the upper surface of the target substrate, and then use an exposure device (such as a step exposure machine) for precise alignment. After ensuring that the lithography pattern completely coincides with the perforations, expose the target substrate. After the exposure is completed, immerse the target substrate in the developer to dissolve the exposed area and reveal the second lithography pattern to obtain a third photoresist layer.
[0083] Further, referring to Figure 16 shown, Figure 16 is a flowchart of step S150 provided by an embodiment of the present application. The manufacturing method of the small-size and small-pitch copper pillars may include but is not limited to steps S1610 to S1640. Figure 1
[0084] Step S1610: Grind the upper and lower surfaces of the target substrate after the second electroplating until both the first photoresist layer and the second photoresist layer are completely exposed on the outer surface.
[0085] Specifically, use a mechanical grinder to grind the upper and lower surfaces of the target substrate after the second electroplating until both the first photoresist layer and the second photoresist layer are completely exposed on the outer surface, then stop grinding.
[0086] Step S1620: Through an etching process, etch the first photoresist layer and the second photoresist layer until both the upper copper layer and the lower copper layer are completely exposed on the outer surface.
[0087] In a possible embodiment, use a plasma device to etch the first photoresist layer and the second photoresist layer until both the upper copper layer and the lower copper layer are completely exposed on the outer surface, then stop etching.
[0088] Step S1630: Grind the upper copper layer until the intermediate layer is completely exposed on the outer surface.
[0089] Specifically, use a mechanical grinder to grind the upper copper layer of the target substrate until the intermediate layer is completely exposed on the outer surface, and then stop grinding.
[0090] Step S1640: Etch the intermediate layer through an etching process until the copper bodies in the photoresist holes and the copper bodies in the corresponding through holes are completely exposed on the outer surface, obtaining the target copper pillars.
[0091] Specifically, use a plasma device to etch the intermediate layer until the copper bodies in the photoresist holes and the copper bodies in the corresponding through holes are completely exposed on the outer surface, obtaining the target copper pillars.
[0092] The embodiment of the present application also provides an electronic device, which includes a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, it implements the above-mentioned method for manufacturing copper pillars with small size and small pitch.
[0093] Please refer to Figure 17 , Figure 17 which is a schematic diagram of the hardware structure of an electronic device provided by an embodiment of the present application. The electronic device includes: A processor 1701, which can be implemented by using a general-purpose CPU (Central Processing Unit), a microprocessor, an application-specific integrated circuit (ASIC), or one or more integrated circuits, etc., and is used to execute relevant programs to implement the method for manufacturing copper pillars with small size and small pitch provided by the embodiment of the present application; A memory 1702, which can be implemented in the form of a read-only memory (ROM), a static storage device, a dynamic storage device, or a random access memory (RAM), etc. The memory 1702 can store an operating system and other application programs. When implementing the technical solutions provided by the embodiments of this specification through software or firmware, the relevant program codes are stored in the memory 1702 and are called by the processor 1701 to execute the method for manufacturing copper pillars with small size and small pitch provided by the embodiment of the present application; An input / output interface 1703, which is used to implement information input and output; A communication interface 1704, which is used to implement communication interaction between this device and other devices, and can achieve communication through a wired method (such as USB, network cable, etc.) or through a wireless method (such as mobile network, WIFI, Bluetooth, etc.); The bus 1705 transmits information among various components of the device (such as the processor 1701, the memory 1702, the input / output interface 1703, and the communication interface 1704); Among them, the processor 1701, the memory 1702, the input / output interface 1703, and the communication interface 1704 are communicatively connected to each other inside the device through the bus 1705.
[0094] The embodiment of the present application also provides a computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, it is the method for manufacturing copper pillars with small size and small pitch provided by the embodiment of the present application.
[0095] As a non-transitory computer-readable storage medium, the memory can be used to store non-transitory software programs and non-transitory computer-executable programs. In addition, the memory may include high-speed random access memory, and may also include non-transitory memory, such as at least one magnetic disk storage device, a flash memory device, or other non-transitory solid-state storage devices. In some embodiments, the memory may optionally include a memory remotely disposed relative to the processor, and these remote memories can be connected to the processor through a network. Examples of the above networks include, but are not limited to, the Internet, an enterprise intranet, a local area network, a mobile communication network, and combinations thereof.
[0096] The embodiments described in the embodiments of the present application are for more clearly illustrating the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided by the embodiments of the present application. Those skilled in the art will know that with the evolution of technology and the emergence of new application scenarios, the technical solutions provided by the embodiments of the present application are equally applicable to similar technical problems.
[0097] Those skilled in the art can understand that the technical solutions shown in the figures do not constitute a limitation on the embodiments of the present application, and may include more or fewer steps than those shown, or combine some steps, or different steps.
[0098] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separated, that is, they may be located in one place, or may be distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment.
[0099] Those of ordinary skill in the art can understand that all or some of the steps in the methods disclosed above, and the functional modules / units in the systems and devices can be implemented as software, firmware, hardware, and appropriate combinations thereof.
[0100] In the description of the present application and the above-mentioned drawings, terms such as "first", "second", "third", "fourth", etc. (if any) are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances so that the embodiments of the present application described herein can be implemented in an order different from those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products, or devices.
[0101] It should be understood that in the present application, "at least one (item)" means one or more, and "a plurality" means two or more. "And / or" is used to describe the association relationship of associated objects and indicates that there can be three relationships. For example, "A and / or B" can mean: only A exists, only B exists, and both A and B exist at the same time. Among them, A and B can be singular or plural. The character " / " generally means that the associated objects before and after are in an "or" relationship. "At least one (one) of the following" or its similar expression means any combination of these items, including any combination of single item (one) or plural items (ones). For example, at least one (one) of a, b, or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.
[0102] In several embodiments provided by the present application, it should be understood that the disclosed systems and methods can be implemented in other ways. For example, the system embodiments described above are merely illustrative. For example, the above-mentioned division of units is only a logical function division, and there can be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the displayed or discussed coupling or direct coupling or communication connection to each other can be through some interfaces, and the indirect coupling or communication connection of devices or units can be in an electrical, mechanical or other form.
[0103] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.
[0104] In addition, in each embodiment of the present application, the functional units may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of a software functional unit.
[0105] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes multiple instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods in the various embodiments of the present application. The aforementioned storage medium includes: various media that can store programs such as USB flash drives, mobile hard disks, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical discs.
[0106] The preferred embodiments of the embodiments of the present application have been described above with reference to the accompanying drawings, and thus do not limit the scope of rights of the embodiments of the present application. Any modifications, equivalent replacements, and improvements made by those skilled in the art without departing from the scope and essence of the embodiments of the present application shall be within the scope of rights of the embodiments of the present application.
Claims
1. A manufacturing method for copper pillars with small size and small pitch, characterized in that, Comprising: Obtaining a target substrate, the target substrate including an upper copper layer, an intermediate layer, and a lower copper layer; Preparing a plurality of through-holes on the target substrate, the through-holes penetrating through the upper copper layer, the intermediate layer, and the lower copper layer; Electroplating copper in each of the through-holes of the target substrate; Preparing a first photoresist layer on the lower surface of the target substrate after the first electroplating, and preparing a second photoresist layer on the upper surface of the target substrate after the first electroplating, wherein the second photoresist layer includes a plurality of photoresist holes, and the positions of the photoresist holes correspond one-to-one to the positions of the through-holes; Electroplating copper in each of the photoresist holes of the target substrate so that the copper bodies in the photoresist holes are connected to the copper bodies in the corresponding through-holes; Removing the upper copper layer, the intermediate layer, the first photoresist layer, and the second photoresist layer of the target substrate after the second electroplating to obtain a plurality of target copper pillars supported on the lower copper layer.
2. The method for manufacturing a copper pillar according to claim 1, characterized in that The preparing a plurality of through-holes on the target substrate includes: Based on a perforation technique, preparing a plurality of through-holes on the target substrate; Or, based on a development and etching technique, preparing a plurality of through-holes on the target substrate.
3. The method for manufacturing a copper pillar according to claim 2, wherein, The based on a perforation technique, preparing a plurality of through-holes on the target substrate includes: Determining a plurality of perforation positions in the target substrate; Performing a punching process on each of the perforation positions on the target substrate to obtain a plurality of the through-holes; Or, performing a drilling process on each of the perforation positions on the target substrate to obtain a plurality of the through-holes.
4. The method for manufacturing a copper pillar according to claim 2, wherein, The based on a development and etching technique, preparing a plurality of through-holes on the target substrate includes: Filling photoresist glue on the upper copper layer and the lower copper layer of the target substrate respectively; Determining a plurality of perforation positions in the target substrate and determining a first photolithography pattern on the target substrate based on each of the perforation positions; Based on the first photolithography pattern, performing an exposure and development process on the photoresist glue on the upper copper layer to obtain a third photoresist layer, the third photoresist layer including a plurality of first photolithography holes; Based on the first photolithography pattern, performing an exposure and development process on the photoresist glue on the lower copper layer to obtain a fourth photoresist layer, wherein the fourth photoresist layer includes a plurality of second photolithography holes, and the positions of the first photolithography holes correspond to the positions of the second photolithography holes; Through an etching process, performing an etching process on the target substrate synchronously in each of the first photolithography holes and each of the second photolithography holes until each of the first photolithography holes is respectively connected to the second photolithography hole at the corresponding position to obtain a plurality of the through-holes, and removing the third photoresist layer and the fourth photoresist layer.
5. The method for manufacturing a copper pillar according to claim 1, characterized in that, The obtaining a target substrate includes the following steps: Obtaining an original substrate, the material of the original substrate being a material that can be dissolved by an acid or a base; Using the original substrate as an intermediate layer and electroplating a thin layer of copper on the upper surface and the lower surface of the target substrate respectively to obtain the target substrate.
6. The method for manufacturing a copper pillar according to claim 1, characterized in that, The preparing a first photoresist layer on the lower surface of the target substrate after the first electroplating includes: Filling photoresist glue on the lower surface of the target substrate after the first electroplating; Performing an exposure and development process on the photoresist glue on the lower surface of the target substrate to obtain the first photoresist layer.
7. The method for manufacturing a copper pillar according to claim 1, characterized in that, Preparing a second photoresist layer on the upper surface of the target substrate after the first electroplating includes: Filling photoresist glue on the upper surface of the target substrate after the first electroplating; Determining a second lithography pattern according to the positions of a plurality of the through holes; Based on the second lithography pattern, performing exposure and development processing on the photoresist glue on the upper surface of the target substrate to obtain the second photoresist layer.
8. The method for manufacturing a copper pillar according to claim 1, wherein Removing the upper copper layer, the intermediate layer, the first photoresist layer and the second photoresist layer of the target substrate after the second electroplating to obtain a plurality of target copper pillars supported on the lower copper layer, including: Performing grinding processing on the upper surface and the lower surface of the target substrate after the second electroplating until both the first photoresist layer and the second photoresist layer are completely exposed on the outer surface; Performing etching processing on the first photoresist layer and the second photoresist layer through an etching process until both the upper copper layer and the lower copper layer are completely exposed on the outer surface; Performing grinding processing on the upper copper layer until the intermediate layer is completely exposed on the outer surface; Performing etching processing on the intermediate layer through an etching process until the copper bodies in the photoresist holes and the copper bodies in the corresponding through holes are completely exposed on the outer surface to obtain the target copper pillars.
9. The method for manufacturing a copper pillar according to claim 1, wherein The pitch between each of the target copper pillars is 60 micrometers to 100 micrometers, and the height of each of the target copper pillars is 0.4 millimeters or more.
10. An electronic device, characterized in that, Including: One or more processors; A memory having stored thereon one or more programs which, when executed by the one or more processors, cause the one or more processors to implement the copper pillar manufacturing method according to any one of claims 1 to 9.