Metasurface implementation method, device, equipment and medium based on beam shaping

Abstract

The present invention discloses a metasurface implementation method, device, equipment, and medium based on beam shaping. The method includes: obtaining light source parameters of an array light source incident on a metasurface device; calculating the initial focal length of the first phase of the metasurface device based on the light source parameters and optimizing the first phase distribution; calculating the angular spectrum difference between holes and the angular spectrum difference occupied by a single hole under the action of the first phase based on the light source parameters and the initial focal length; calculating the angular spectrum distribution of the second phase of the metasurface device based on the angular spectrum difference between holes and the angular spectrum difference occupied by a single hole, and then optimizing the second phase distribution of the metasurface device using a weighted angular spectrum component. Based on this, under the combined action of the optimized first phase distribution and the second phase distribution, the incident light of the array light source is beam shaped to form a projection effect of a high-cutoff line laser or a homogenized light spot.

Description

Technical Field

[0001] The present invention relates to the field of optical technology, and in particular to a method, device, equipment and medium for realizing a metasurface based on beam shaping. Background Art

[0002] Line lasers are widely used in fields such as three-dimensional scanning and ranging. The traditional way to achieve the conversion of point lasers into line lasers requires the use of cylindrical lenses, and their total length and structural dimensions do not meet the requirements of miniaturized design. In the scenario of long-distance work, stray light and low cutoff bring about the problem of low energy utilization. Homogenized light spots are also widely used in lighting and measurement. Good cutoff can improve measurement accuracy and efficiency. The use of Vcsel array light sources provides a new solution to the problem of long-distance transmission caused by power. However, beam shaping solutions for array light sources often have problems such as complex devices, large system size, low efficiency, and poor cutoff. Diffractive optical elements (DOEs) have the potential to replace optical lenses, but the diffraction efficiency is often difficult to improve.

[0003] Line lasers are widely used in fields such as 3D scanning and distance measurement. Traditional methods use cylindrical lenses to convert point lasers into line lasers, but their overall length and structural dimensions make them difficult to miniaturize. In long-distance applications, stray light and low cutoff efficiency lead to poor energy utilization. Homogenized beams are also widely used in lighting and measurement, where good cutoff efficiency improves measurement accuracy and efficiency.

[0004] Existing technologies use VCSEL array light sources to address power issues in long-distance transmission. However, beam shaping solutions for VCSEL array light sources generally suffer from complex components, large system size, low efficiency, and poor cutoff performance. Diffractive optical elements (DOEs) have the potential to replace traditional optical lenses, but their diffraction efficiency is often difficult to improve. Therefore, a solution for beam shaping VCSEL array light sources to improve projection quality is urgently needed. Summary of the Invention

[0005] The purpose of the present invention is to provide a method, device, equipment and medium for realizing a metasurface based on beam shaping, aiming to solve the problem of how to efficiently shape the beam of an array light source to improve the projection effect.

[0006] In a first aspect, an embodiment of the present invention provides a method for realizing a metasurface based on beam shaping, comprising:

[0007] Obtaining light source parameters of the array light source incident on the metasurface device;

[0008] Calculating an initial focal length of a first phase of the metasurface device according to the light source parameters;

[0009] Optimizing the first phase according to a set target focal length and a modulation transfer function to confirm a first phase distribution;

[0010] Calculating the angular spectrum difference between holes and the angular spectrum difference occupied by a single hole under the action of the first phase according to the light source parameters and the initial focal length;

[0011] Calculating the angular spectrum distribution of the second phase of the metasurface device according to the angular spectrum difference between the holes and the angular spectrum difference occupied by a single hole;

[0012] According to the angular spectrum distribution of the second phase and the optimized first phase distribution, beam shaping is performed on the incident light of the array light source to form a line laser projection effect.

[0013] In a second aspect, an embodiment of the present invention provides a metasurface implementation device based on beam shaping, comprising:

[0014] A parameter acquisition unit, configured to acquire light source parameters of the array light source incident on the metasurface device;

[0015] a focal length calculation unit, configured to calculate an initial focal length of the first phase of the metasurface device according to the light source parameters;

[0016] a first phase confirmation unit, configured to optimize the first phase according to a set target focal length and a modulation transfer function to confirm a first phase distribution;

[0017] an angular spectrum difference calculation unit, configured to calculate the angular spectrum difference between holes and the angular spectrum difference occupied by a single hole under the action of the first phase according to the light source parameters and the initial focal length;

[0018] an angular spectrum distribution calculation unit, configured to calculate the angular spectrum distribution of the second phase of the metasurface device according to the angular spectrum difference between the holes and the angular spectrum difference occupied by a single hole;

[0019] The first beam shaping unit is used to perform beam shaping on the incident light of the array light source according to the angular spectrum distribution of the second phase and the optimized first phase distribution to form a line laser projection effect.

[0020] In a third aspect, an embodiment of the present invention provides a computer device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the computer program, the method for realizing a metasurface based on beam shaping as described in the first aspect above is implemented.

[0021] In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the processor executes the beam shaping-based metasurface implementation method described in the first aspect above.

[0022] The embodiment of the present invention discloses a method for realizing a metasurface based on beam shaping. The method includes: obtaining the light source parameters of an array light source incident on a metasurface device; calculating the initial focal length of the first phase of the metasurface device according to the light source parameters and optimizing the first phase distribution; calculating the angular spectrum difference between holes and the angular spectrum difference occupied by a single hole under the action of the first phase according to the light source parameters and the initial focal length; calculating the angular spectrum distribution of the second phase of the metasurface device according to the angular spectrum difference between holes and the angular spectrum difference occupied by a single hole, and then optimizing the second phase distribution of the metasurface device by using weighted angular spectrum components. Based on this, the present invention performs beam shaping on the incident light of the array light source under the joint action of the optimized first phase distribution and the second phase distribution, which can form a projection effect of a high-cutoff line laser or a homogenized light spot. Moreover, compared with the existing DOE device, the metasurface device improves the continuity of the phase distribution and effectively improves the diffraction efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 A phase and transmittance curve provided by an embodiment of the present invention;

[0025] Figure 2 A schematic structural diagram of an array light source provided by an embodiment of the present invention;

[0026] Figure 3 A schematic diagram of a line laser projection module provided by an embodiment of the present invention;

[0027] Figure 4 A schematic diagram of a metasurface phase arrangement provided by an embodiment of the present invention;

[0028] Figure 5 A schematic diagram of the projection effect of a shaped line laser provided in an embodiment of the present invention;

[0029] Figure 6 A schematic flow chart of a method for realizing a metasurface based on beam shaping provided in an embodiment of the present invention;

[0030] Figure 7 A schematic diagram of a sub-flow diagram of step S605 provided in an embodiment of the present invention;

[0031] Figure 8 A schematic block diagram of a device for implementing a metasurface based on beam shaping provided in an embodiment of the present invention;

[0032] Figure 9 A schematic block diagram of a computer device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0033] The following will provide a clear and complete description of the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0034] It will be understood that when used in this specification and the appended claims, the terms “comprises” and “comprising” indicate the presence of described features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0035] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the present invention. As used in the specification and appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly indicates otherwise.

[0036] It should be further understood that the term "and / or" used in the present description and appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0037] To facilitate understanding of the present invention, the metasurface device involved in the present invention is first introduced. The metasurface device includes a transparent substrate and a nanostructure provided on the substrate, wherein the nanostructure is a nanocolumn or a nanopore; the transparent substrate can be made of materials such as silicon dioxide and silicon nitride, and the nanostructure is taken as an example of a nanocolumn, which can be made of amorphous silicon. The size range of the nanocolumn is between 180nm and 300nm, and the specific value is as follows: Figure 1 The phase and transmittance curve shown in the figure is determined. The nanopillars can be cylindrical, rectangular, hexagonal, triangular and other shapes. The height of the nanopillars ranges from 500nm to 700nm, and within this range, the height with high transmittance is preferred. The metasurface device of the present invention can be based on the following metasurface implementation method based on beam shaping, and the array light source (reference Figure 2 The incident light of the VCSEL light source (as shown) is beam shaped to form a projection effect of a line laser or a homogenized light spot.

[0038] See also Figure 6 , Figure 6A schematic flow chart of a method for realizing a metasurface based on beam shaping provided in an embodiment of the present invention.

[0039] like Figure 6 As shown, the method includes steps S601-S606.

[0040] S601, obtaining light source parameters of an array light source incident on a metasurface device;

[0041] In step S601, the array light source may be a light board having a plurality of light emitting lamps arranged in an array, and the light source parameters include the length of the light emitting area. L x ,Width L y , the distribution of light-emitting holes in the light-emitting area, the diameter of the light-emitting holes r And the hole spacing of the light-emitting hole D , then you need to determine the specified distance z Line length of downward projected light (such as line laser) L z and line width V , or determine the length and width of the homogenized light spot.

[0042] S602, calculating the initial focal length of the first phase of the metasurface device according to the light source parameters;

[0043] For step S602, the initial focal length of the first phase of the metasurface device is calculated according to the following formula: f :

[0044] ;

[0045] ;

[0046] in, L x Indicates the length of the luminous area, θ represents the angle of each line, z Indicates the desired projection distance. L z Indicates the specified distance z The line length of the laser line below.

[0047] S603, optimizing the first phase according to the set target focal length and modulation transfer function to confirm a first phase distribution;

[0048] In step S603, the first phase is used to modulate the incident light to achieve focusing, deflection, or homogenization. Through simulation and iterative calculation, the first phase distribution is adjusted to achieve predetermined performance indicators at the target focal length and modulation transfer function (MTF).

[0049] For step S603, the first phase distribution is optimized according to the following formula: :

[0050] ;

[0051] in, M represents the weight coefficient, N represents the maximum number of even-order terms, i represents the number of even-order terms, A is a constant coefficient, A Belong to the optimization variable; ρ is the normalized radius. By adjusting the constant coefficient A The value of is set so that the first phase distribution achieves the set target focal length and modulation transfer function. The coverage of the optimized first phase must be at least larger than the illuminated area of ​​the light spot.

[0052] S604, calculating the angular spectrum difference between holes and the angular spectrum difference occupied by a single hole under the action of the first phase according to the light source parameters and the initial focal length;

[0053] In step S604, the inter-aperture angular spectrum difference is calculated according to the following formula: The angular spectrum difference between the single hole :

[0054] ;

[0055] ;

[0056] in, D Indicates the hole spacing of the light-emitting holes in the array light source, f represents the initial focal length of the first phase, r Indicates the diameter of the light-emitting hole in the array light source, λ represents the design wavelength, λ Determined by the wavelength of the array light source.

[0057] S605, calculating the angular spectrum distribution of the second phase of the metasurface device according to the angular spectrum difference between the holes and the angular spectrum difference occupied by a single hole;

[0058] In step S605, the angular spectrum distribution of the second phase is used to further determine the light field control characteristics of the metasurface device, including light focusing, deflection, beam splitting, beam expansion and other effects.

[0059] like Figure 7 As shown, step S605 may include:

[0060] S701, setting the overlap ratio of adjacent angular spectrum positions in the angular spectrum distribution of the second phase of the metasurface device;

[0061] S702, taking the product of the angular spectrum difference occupied by the single hole and the overlap ratio as the minimum angular spectrum of the angular spectrum distribution of the second phase;

[0062] S703, taking the angular spectrum difference between the holes as the maximum angular spectrum of the angular spectrum distribution of the second phase;

[0063] S704: Obtain an angular spectrum distribution of a second phase according to the minimum angular spectrum and the maximum angular spectrum.

[0064] In steps S701-S704, in order to ensure uniform distribution of the line laser, the overlap ratio of adjacent angular spectrum positions in the angular spectrum distribution of the second phase must reach more than 40%, and the distribution must be based on the angular spectrum difference between the holes. within the determined range.

[0065] In some preferred embodiments, the overlap ratio in step S701 is set to 50%, and the angular spectrum distribution of the second phase can be expressed as:

[0066] ;

[0067] in, F min represents the minimum angular spectrum of the second phase angle spectrum distribution, F max It indicates the maximum angular spectrum of the second phase angular spectrum distribution. It should be noted that the minimum angular spectrum and the maximum angular spectrum are not fixed values, and the minimum angular spectrum can be slightly floating; the value of the maximum angular spectrum can be the angular spectrum difference between the holes. , but in general it is worse than the inter-aperture angular spectrum It should be small to avoid over-modulation during beam shaping.

[0068] S606, performing beam shaping on the incident light of the array light source according to the angular spectrum distribution of the second phase and the optimized first phase distribution to form a line laser projection effect;

[0069] In step S606, the first phase and the second phase are simultaneously applied: the first phase determines the final spot's outline, while the second phase controls the intensity distribution within that outline. For example, assuming a line laser projection is required, the first phase focuses the incoming light from the array light source into discrete points at different angles, while the second phase connects these discrete points into a single line through horizontal and vertical beam splitting and expansion, achieving a high-cutoff line laser projection.

[0070] The above steps S601-S606 are mainly used to form a line laser, and only need to be operated in one-dimensional direction. They can be expanded to two dimensions to be applied to the formation of a uniform spot, and can be operated twice in one-dimensional direction.

[0071] In one embodiment, the method for realizing a metasurface based on beam shaping further includes steps S607-S608.

[0072] S607, optimizing the second phase distribution of the metasurface device by weighting different angular spectrum components;

[0073] In step S607, the second phase distribution is calculated according to the following formula: :

[0074] ;

[0075] in, m represents the total number of superimposed phase distributions, α represents the weight coefficient, α The larger the value, the larger the corresponding angular spectrum component. λ represents the design wavelength, λ Determined by the wavelength of the array light source, a i represents the tilt coefficient, j Indicates imaginary units, except wavelength λ All other parameters except can be optimized to optimize the second phase distribution.

[0076] S608 : Perform beam shaping on the incident light of the array light source according to the optimized second phase distribution and the first phase distribution to form a uniform light spot projection effect.

[0077] In steps S607-S608, by finely controlling the weight coefficients of different angular spectrum components, the second phase distribution of the metasurface device can be further optimized so that it works in synergy with the first phase distribution to achieve more precise control of the incident light. This synergy enables the incident light of the array light source to form not only a high-cutoff line laser projection after passing through the metasurface device, but also a uniform spot projection effect. The characteristic of the uniform spot projection effect is that its light intensity distribution is uniform, without obvious hot spots or dark areas, which is particularly important for application scenarios that require uniform lighting. In addition, by optimizing by weighting different angular spectrum components, the diffraction efficiency of the metasurface device can be further improved, making the beam shaping process more efficient and accurate.

[0078] Based on the above steps S601 to S608 , precise beam shaping of the incident light of the array light source is achieved, thereby forming a projection effect of a line laser or a homogenized light spot with high cutoff.

[0079] Based on the above-mentioned method of realizing the metasurface based on beam shaping, taking the formation of line laser as an example, the obtained metasurface device and array light source can be formed as follows Figure 3 The line laser projection module shown; wherein 21 represents the array light source, 22 represents the metasurface device, and 23 represents the receiving screen.

[0080] Based on the above-mentioned metasurface implementation method based on beam shaping, the first phase and the second phase jointly realize the overall beam function of the metasurface device, which can be achieved as follows: Figure 4 The common display effect shown is due to the unique metasurface implementation method of the present invention, which makes the phase distribution continuity extremely good, effectively improves the diffraction efficiency of the metasurface and reduces the design difficulty.

[0081] Based on the above-mentioned metasurface implementation method based on beam shaping, taking the formation of line laser as an example, the first phase and the second phase jointly realize the overall beam function of the metasurface device, which can be achieved as follows: Figure 5 A line laser projection effect shown can achieve high cutoff and uniformity.

[0082] The embodiment of the present invention further provides a metasurface realization device based on beam shaping, which is used to perform any embodiment of the aforementioned metasurface realization method based on beam shaping. Figure 8 , Figure 8 It is a schematic block diagram of a metasurface implementation device based on beam shaping provided by an embodiment of the present invention.

[0083] like Figure 8 As shown, a metasurface implementation device 800 based on beam shaping includes: a parameter acquisition unit 801, a focal length calculation unit 802, a first phase confirmation unit 803, an angular spectrum difference calculation unit 804, an angular spectrum distribution calculation unit 805 and a first beam shaping unit 806.

[0084] A parameter acquisition unit 801 is used to acquire light source parameters of an array light source incident on a metasurface device;

[0085] A focal length calculation unit 802 is configured to calculate an initial focal length of the first phase of the metasurface device according to light source parameters;

[0086] A first phase confirmation unit 803 is configured to optimize the first phase according to a set target focal length and a modulation transfer function to confirm a first phase distribution;

[0087] An angular spectrum difference calculation unit 804 is used to calculate the angular spectrum difference between holes and the angular spectrum difference occupied by a single hole under the action of the first phase according to the light source parameters and the initial focal length;

[0088] An angular spectrum distribution calculation unit 805 is used to calculate the angular spectrum distribution of the second phase of the metasurface device based on the angular spectrum difference between the holes and the angular spectrum difference occupied by a single hole;

[0089] The first beam shaping unit 806 is configured to perform beam shaping on the incident light of the array light source according to the angular spectrum distribution of the second phase and the optimized first phase distribution to form a line laser projection effect.

[0090] like Figure 8 As shown, the metasurface device 800 based on beam shaping further includes: a second phase confirmation unit 807 and a second beam shaping unit 808.

[0091] A second phase confirmation unit 807 is configured to optimize the second phase distribution of the metasurface device by weighting different angular spectrum components;

[0092] The second beam shaping unit 808 is used to perform beam shaping on the incident light of the array light source according to the optimized second phase distribution and the first phase distribution to form a uniform light spot projection effect.

[0093] The device, through the combined action of the optimized first and second phase distributions, shapes the incident light from the array light source, creating a high-cutoff line laser or a homogenized spot projection effect. Furthermore, compared to existing DOE devices, the metasurface device improves the continuity of the phase distribution, effectively increasing diffraction efficiency.

[0094] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the above-described devices and units can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0095] The above-mentioned metasurface implementation device based on beam shaping can be implemented in the form of a computer program, which can be used in Figure 9 Runs on the computer equipment shown.

[0096] See also Figure 9 , Figure 9 Schematic block diagram of a computer device provided by an embodiment of the present invention. The computer device 900 is a server, which can be an independent server or a server cluster composed of multiple servers.

[0097] See Figure 9 The computer device 900 includes a processor 902 , a memory, and a network interface 905 connected via a system bus 901 , wherein the memory may include a non-volatile storage medium 903 and an internal memory 904 .

[0098] The non-volatile storage medium 903 may store an operating system 9031 and a computer program 9032. When the computer program 9032 is executed, the processor 902 may execute a metasurface implementation method based on beam shaping.

[0099] The processor 902 is used to provide computing and control capabilities to support the operation of the entire computer device 900.

[0100] The internal memory 904 provides an environment for the operation of the computer program 9032 in the non-volatile storage medium 903. When the computer program 9032 is executed by the processor 902, the processor 902 can execute the metasurface implementation method based on beam shaping.

[0101] The network interface 905 is used for network communication, such as providing data information transmission. Those skilled in the art will understand that Figure 9 The structure shown in the figure is merely a block diagram of a portion of the structure related to the solution of the present invention and does not constitute a limitation on the computer device 900 to which the solution of the present invention is applied. The specific computer device 900 may include more or fewer components than those shown in the figure, or combine certain components, or have a different component arrangement.

[0102] Those skilled in the art will understand that Figure 9 The embodiment of the computer device shown in the figure does not constitute a limitation on the specific composition of the computer device. In other embodiments, the computer device may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently. For example, in some embodiments, the computer device may only include a memory and a processor. In such an embodiment, the structure and function of the memory and processor are the same as those in the figure. Figure 9 The embodiments shown are consistent and will not be described again here.

[0103] It should be understood that in the embodiment of the present invention, the processor 902 may be a central processing unit (CPU), or may be other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor may be a microprocessor or any conventional processor.

[0104] In another embodiment of the present invention, a computer-readable storage medium is provided. The computer-readable storage medium may be a non-volatile computer-readable storage medium. The computer-readable storage medium stores a computer program, wherein when the computer program is executed by a processor, the method for implementing a metasurface based on beam shaping according to an embodiment of the present invention is implemented.

[0105] The storage medium is a physical, non-transient storage medium, for example, a USB flash drive, a mobile hard disk, a read-only memory (ROM), a magnetic disk, or an optical disk, etc., which can store program codes.

[0106] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the above-described equipment, devices and units can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0107] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and such modifications or substitutions are intended to be within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.

Claims

1. A method for realizing a metasurface based on beam shaping, characterized in that: include: Obtaining light source parameters of the array light source incident on the metasurface device; Calculating an initial focal length of the first phase of the metasurface device according to the light source parameters; Optimizing the first phase according to a set target focal length and a modulation transfer function to confirm a first phase distribution; Calculating the angular spectrum difference between holes and the angular spectrum difference occupied by a single hole under the action of the first phase according to the light source parameters and the initial focal length; Calculating the angular spectrum distribution of the second phase of the metasurface device according to the angular spectrum difference between the holes and the angular spectrum difference occupied by a single hole; According to the angular spectrum distribution of the second phase and the optimized first phase distribution, beam shaping is performed on the incident light of the array light source to form a line laser projection effect.

2. The method for realizing a metasurface based on beam shaping according to claim 1, wherein: Also includes: Optimizing the second phase distribution of the metasurface device by weighting different angular spectrum components; According to the optimized second phase distribution and the first phase distribution, beam shaping is performed on the incident light of the array light source to form a uniform light spot projection effect.

3. The method for realizing a metasurface based on beam shaping according to claim 2, wherein: Calculating the initial focal length of the first phase of the metasurface device according to the light source parameters includes: The initial focal length of the first phase of the metasurface device is calculated as follows: f : ； ； in, L x Indicates the length of the luminous area, θ represents the angle of each line, z Indicates the desired projection distance. L z Indicates the specified distance z The line length of the laser line below.

4. The method for realizing a metasurface based on beam shaping according to claim 1, wherein: Optimizing the first phase according to the set target focal length and modulation transfer function to confirm a first phase distribution includes: The first phase distribution is calculated as follows: : ； in, M represents the weight coefficient, N represents the maximum number of even-order terms, i represents the number of even-order terms, A is a constant coefficient, A Belong to the optimization variable; ρ is the normalized radius.

5. The method for realizing a metasurface based on beam shaping according to claim 1, wherein: The calculating, according to the light source parameters and the initial focal length, the angular spectrum difference between the holes and the angular spectrum difference occupied by a single hole under the action of the first phase includes: The inter-aperture angular spectrum difference is calculated as follows The angular spectrum difference between the single hole and : ； ； in, D represents the hole spacing of the light-emitting holes in the array light source, f represents the initial focal length of the first phase, r represents the diameter of the light-emitting hole in the array light source, λ represents the design wavelength, λ Determined by the wavelength of the array light source.

6. The method for realizing a metasurface based on beam shaping according to claim 1, wherein: The calculating the angular spectrum distribution of the second phase of the metasurface device according to the angular spectrum difference between the holes and the angular spectrum difference occupied by a single hole includes: Setting the overlap ratio of adjacent angular spectrum positions in the angular spectrum distribution of the second phase of the metasurface device; The product of the angular spectrum difference occupied by the single hole and the overlap ratio is used as the minimum angular spectrum of the angular spectrum distribution of the second phase; Taking the inter-aperture angular spectrum difference as the maximum angular spectrum of the angular spectrum distribution of the second phase; The angular spectrum distribution of the second phase is obtained according to the minimum angular spectrum and the maximum angular spectrum.

7. The method for realizing a metasurface based on beam shaping according to claim 2, wherein: The step of optimizing the second phase distribution of the metasurface device by weighting different angular spectrum components comprises: The second phase distribution is calculated as follows: : ； in, m represents the total number of superimposed phase distributions, α represents the weight coefficient, α The larger the value, the larger the corresponding angular spectrum component. λ represents the design wavelength, λ Determined by the wavelength of the array light source, a i represents the tilt coefficient, j Represents an imaginary unit.

8. The method for realizing a metasurface based on beam shaping according to any one of claims 1 to 7, wherein: The metasurface device includes a transparent substrate and a nanostructure arranged on the substrate. The metasurface device is used to perform phase modulation on incident light to achieve the beam shaping.

9. A metasurface implementation device based on beam shaping, characterized in that: include: A parameter acquisition unit, configured to acquire light source parameters of the array light source incident on the metasurface device; a focal length calculation unit, configured to calculate an initial focal length of the first phase of the metasurface device according to the light source parameters; a first phase confirmation unit, configured to optimize the first phase according to a set target focal length and a modulation transfer function to confirm a first phase distribution; an angular spectrum difference calculation unit, configured to calculate the angular spectrum difference between holes and the angular spectrum difference occupied by a single hole under the action of the first phase according to the light source parameters and the initial focal length; an angular spectrum distribution calculation unit, configured to calculate the angular spectrum distribution of the second phase of the metasurface device according to the angular spectrum difference between the holes and the angular spectrum difference occupied by a single hole; The first beam shaping unit is used to perform beam shaping on the incident light of the array light source according to the angular spectrum distribution of the second phase and the optimized first phase distribution to form a line laser projection effect.

10. A computer device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the computer program, the method for realizing a metasurface based on beam shaping according to any one of claims 1 to 8 is implemented.

11. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, which, when executed by a processor, causes the processor to perform the metasurface implementation method based on beam shaping according to any one of claims 1 to 8.

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