Sapphire polishing intelligent monitoring system and method based on backflow regulation and control

Abstract

The invention discloses an intelligent sapphire polishing monitoring system and method based on backflow regulation and control, relates to the technical field of flow control, and aims to evaluate the polishing effect of a sapphire polishing solution based on sapphire polishing solution particle quality data and uniformity degree data and evaluate the polishing effect of a sapphire workpiece based on sapphire workpiece smoothness degree data. And according to the sapphire polishing solution polishing effect evaluation result, the sapphire workpiece polishing effect evaluation result and the initial flow control speed data, backflow flow control adjustment is conducted, uneven polishing caused by polishing solution precipitation is prevented, and then the optical performance of the sapphire workpiece is improved.

Description

Technical Field

[0001] This application belongs to the field of flow control, specifically a sapphire polishing intelligent monitoring system and method based on reflux regulation. Background Art

[0002] A sapphire wafer is a thin slice processed from sapphire single crystal material, and it is widely used in the semiconductor, optical, and electronic fields; due to the excellent physical properties of sapphire such as high hardness, high temperature resistance, and corrosion resistance, it has become an ideal material for many high-end applications; sapphire wafers are common substrate materials for blue and white LEDs, and due to their excellent optical properties and high light transmittance, they provide stable support for LED chips, making the luminous efficiency and light stability of LEDs higher; in addition, due to its high light transmittance and high strength, it is also often used in the core components of high-performance optical components such as lasers, optical windows, and infrared imaging.

[0003] A sapphire wafer is processed from a large piece of sapphire single crystal into a thin slice through cutting and polishing processes. During the production of sapphire wafers, the polishing process of sapphire wafers determines the quality and performance of sapphire wafers. In the polishing process of sapphire wafers, sapphire polishing fluid needs to be used, but there are some problems when using sapphire polishing fluid. As the use time of the polishing fluid extends or during storage, some components in the polishing fluid may precipitate. The presence of precipitates will cause the particle composition distribution of the polishing fluid to be uneven, resulting in the surface of the sapphire wafer being unable to be evenly processed during the polishing process, affecting the final effect of the sapphire wafer, causing some areas of the sapphire wafer to be over-polished or under-polished, and even causing secondary scratches or damage to the surface of the sapphire wafer. Especially when the particle precipitates in the polishing fluid are large, this effect is particularly obvious, greatly reducing the optical performance of the sapphire wafer. To solve the problems raised in this background art, this application designs a sapphire polishing intelligent monitoring system and method based on reflux regulation. Summary of the Invention

[0004] In view of the above technical deficiencies, this application proposes a sapphire polishing intelligent monitoring system and method based on reflux regulation.

[0005] To solve the above technical problems, the present invention adopts the following technical solutions: This application provides a sapphire polishing intelligent monitoring method based on reflux regulation, which includes the following specific steps:

[0006] S1. Obtain sapphire polishing fluid particle mass data, uniformity data, sapphire workpiece smoothness data, and initial flow control speed data;

[0007] S2. Evaluate the polishing effect of the sapphire polishing fluid based on the sapphire polishing fluid particle mass data and uniformity data;

[0008] S3. Evaluate the polishing effect of the sapphire workpiece based on the smoothness data of the sapphire workpiece;

[0009] S4. Adjust the reflux flow control according to the evaluation results of the polishing effect of the sapphire polishing liquid, the evaluation results of the polishing effect of the sapphire workpiece, and the initial flow control speed data.

[0010] It should be noted that, as an optimal technical solution of the intelligent monitoring system and method for sapphire polishing based on reflux regulation, the specific steps for obtaining the particle quality data, uniformity data, smoothness data of the sapphire workpiece, and initial flow control speed data of the sapphire polishing liquid are as follows:

[0011] S11. Collect the particle quality data of the sapphire polishing liquid through a laser particle size analyzer. Among them, the particle quality data of the sapphire polishing liquid includes the particle size data and roundness data in the sapphire polishing liquid;

[0012] S12. Collect the uniformity data of the sapphire polishing liquid through a laser particle size analyzer and an optical microscope. Among them, the uniformity data of the sapphire polishing liquid includes the liquid concentration data and the particle distribution width data;

[0013] S13. Collect the smoothness data of the sapphire workpiece through a white light interferometer. Among them, the smoothness data of the sapphire workpiece includes the thickness data of the sapphire workpiece, the surface measurement area data, and the position height data of each measurement point;

[0014] S14. Obtain the initial flow control speed data through the flow control speed data stored in the storage component;

[0015] S15. Store the collected data in the storage component for use in the analysis process.

[0016] It should be noted that, as an optimal technical solution of the intelligent monitoring system and method for sapphire polishing based on reflux regulation, the evaluation of the polishing effect of the sapphire polishing liquid in S2 includes the following specific steps:

[0017] S21. Obtain the particle size data and roundness data in the sapphire polishing liquid, and obtain the particle quality evaluation value of the sapphire polishing liquid from the particle size data and roundness data in the sapphire polishing liquid;

[0018] S22. Obtain the liquid concentration data and particle distribution width data in the sapphire polishing liquid, and obtain the uniformity evaluation value of the sapphire polishing liquid from the liquid concentration data and particle distribution width data in the sapphire polishing liquid;

[0019] S23. Obtain the particle quality evaluation value and uniformity evaluation value of the sapphire polishing liquid, and obtain the polishing effect evaluation value of the sapphire polishing liquid from the particle quality evaluation value and uniformity evaluation value of the sapphire polishing liquid;

[0020] S24. Compare the polishing effect evaluation value of the sapphire polishing liquid with the set threshold value of the polishing effect evaluation value. If the polishing effect evaluation value of the sapphire polishing liquid is greater than the set threshold value of the polishing effect evaluation value, it indicates that the polishing effect of the sapphire polishing liquid is excellent. If the polishing effect evaluation value of the sapphire polishing liquid is equal to the set threshold value of the polishing effect evaluation value, it indicates that the polishing effect of the sapphire polishing liquid is qualified. If the polishing effect evaluation value of the sapphire polishing liquid is less than the set threshold value of the polishing effect evaluation value, it indicates that the polishing effect of the sapphire polishing liquid is unqualified. Evaluate the polishing effect of the sapphire polishing liquid by integrating the evaluation results of the particle quality and the uniformity of the sapphire polishing liquid, which improves the accuracy of the control parameters for adjusting the reflux flow rate of the sapphire polishing liquid.

[0021] It should be noted that as an optimal technical solution of the intelligent monitoring system and method for sapphire polishing based on reflux regulation, the specific steps of S21 are as follows: Import the particle size data and roundness data in the sapphire polishing liquid into the calculation formula for the particle quality evaluation value of the sapphire polishing liquid to calculate the particle quality evaluation value of the sapphire polishing liquid. Among them, the calculation formula for the particle quality evaluation value of the sapphire polishing liquid is: , where is the standard deviation of the particle size, D is the average particle size, D0 is the set reference particle size, and d min is the minimum value of the particle roundness diameter, and d max is the maximum value of the particle roundness diameter, and a is the set weight of the particle size ratio. It should be noted here that measures the width of the particle size data distribution. The smaller the standard deviation of the particle size, the more concentrated the particle size data distribution. The larger the standard deviation of the particle size, the more dispersed the particle size data distribution. indicates that as the average particle size is farther away from the set reference particle size, the attenuation rate of the particle quality evaluation value of the sapphire polishing liquid is faster. The values of the average particle size, the minimum value of the particle roundness diameter, and the maximum value of the particle roundness diameter in this formula are obtained by: acquiring the average particle size, the minimum value of the particle roundness diameter, and the maximum value of the particle roundness diameter through the data analysis software corresponding to the laser particle size analyzer.

[0022] It should be noted that as an optimal technical solution of the intelligent monitoring system and method for sapphire polishing based on reflux regulation, the specific steps of S22 are as follows: Import the liquid concentration data and particle distribution width data in the sapphire polishing liquid into the calculation formula for the uniformity evaluation value of the sapphire polishing liquid to calculate the uniformity evaluation value. Among them, the calculation formula for the uniformity evaluation value is: , where C is the liquid concentration in the sapphire polishing liquid, and C min is the set minimum liquid concentration, and C maxTo set the maximum value of the liquid concentration, W 90 Is the value less than or equal to the distribution width of 90% of the liquid particles in the sapphire polishing liquid, W 10 Is the value less than or equal to the distribution width of 10% of the liquid particles in the sapphire polishing liquid, W 50 Is the value less than or equal to the distribution width of 50% of the liquid particles in the sapphire polishing liquid. Here, it should be noted that To analyze the similarity between the liquid concentration of the sapphire polishing liquid and the set liquid concentration, when the liquid concentration in the sapphire polishing liquid is more uniform, that is The smaller it is, the higher the evaluation value of the uniformity of the sapphire polishing liquid To analyze the similarity of the particle distribution width in the sapphire polishing liquid, when the particle distribution width in the sapphire polishing liquid is more uniform, that is The smaller it is, the higher the evaluation value of the uniformity of the sapphire polishing liquid. The value-taking methods of the liquid concentration value in the sapphire polishing liquid and the values less than or equal to the distribution widths of 10%, 50%, and 90% of the liquid particles in the sapphire polishing liquid in this formula are as follows: Obtain the liquid concentration value in the sapphire polishing liquid through a laser particle size analyzer, and obtain the values less than or equal to the distribution widths of 10%, 50%, and 90% of the liquid particles in the sapphire polishing liquid through an optical microscope

[0023] It should be noted that as an optimal technical solution of the intelligent monitoring system and method for sapphire polishing based on reflux regulation, the S23 specifically includes the following steps: Import the data of the sapphire polishing liquid particle quality evaluation value and the uniformity evaluation value into the calculation formula of the sapphire polishing liquid polishing effect evaluation value to calculate the polishing liquid polishing effect evaluation value. Among them, the calculation formula of the polishing liquid polishing effect evaluation value is , where b is the proportion weight of the sapphire polishing liquid particle quality evaluation value. Here, it should be noted that when the data of the sapphire polishing liquid particle quality evaluation value and the uniformity evaluation value are smaller, the polishing liquid polishing effect evaluation value is smaller. By comprehensively considering the sapphire polishing liquid particle quality evaluation value and the uniformity evaluation value, the accuracy of the control parameters for adjusting the reflux flow rate of the sapphire polishing liquid is improved

[0024] It should be noted that as an optimal technical solution of the intelligent monitoring system and method for sapphire polishing based on reflux regulation, the S3 specifically includes the following steps

[0025] S31. Obtain the sapphire workpiece thickness data, surface measurement area data, and the position height data of each measurement point

[0026] S32. Import the sapphire workpiece thickness data, surface measurement area data, and the position height data of each measurement point into the calculation formula of the sapphire workpiece polishing effect evaluation value to calculate the workpiece polishing effect evaluation value. Among them, the calculation formula of the workpiece polishing effect evaluation value is , where H is the thickness of the sapphire workpiece, S is the surface measurement area of the sapphire workpiece, and h(x) is the height change at each measurement point on the surface of the sapphire workpiece. Here, it should be noted that The average value of the height changes at each measurement point on the surface of the sapphire workpiece is used to represent the polishing effect of the workpiece. At the same time, the influence of the thickness of the sapphire workpiece on the evaluation value of the polishing effect of the sapphire workpiece is also comprehensively considered. The value-taking methods of the sapphire workpiece thickness data, the surface measurement area data, and the height data at each measurement point in this formula are as follows: The probe of the white light interferometer is used to perform three-dimensional scanning on the sapphire workpiece to obtain the sapphire workpiece thickness distribution map and the surface contour map. The workpiece thickness data is obtained from the sapphire workpiece thickness distribution map, and the surface measurement area data and the height data at each measurement point are obtained from the sapphire surface contour map.

[0027] It should be noted that as an optimal technical solution of the intelligent monitoring system and method for sapphire polishing based on reflux regulation, the step S4 specifically includes the following steps:

[0028] S41. Obtain the evaluation value data of the polishing effect of the sapphire polishing liquid, the evaluation value data of the polishing effect of the sapphire workpiece, and the initial flow control speed data;

[0029] S42. Import the evaluation value data of the polishing effect of the sapphire polishing liquid, the evaluation value data of the polishing effect of the sapphire workpiece, and the initial flow control speed data into the reflux flow adjustment value calculation formula to calculate the reflux flow adjustment value. Among them, the reflux flow adjustment value calculation formula is: , where v0 is the initial flow control speed of the sapphire polishing liquid, is the set standard polishing effect evaluation value of the polishing liquid, is the set reference fluctuation value of the polishing effect evaluation value of the polishing liquid, is the set standard workpiece polishing effect evaluation value, is the set reference fluctuation value of the workpiece polishing effect evaluation value, and c is the proportion weight of the polishing effect evaluation value of the polishing liquid. Here, it should be noted that in this formula In order to analyze the similarity between the polishing effect evaluation value of the polishing liquid and the standard polishing effect evaluation value of the polishing liquid, when the polishing effect evaluation value of the polishing liquid is more similar to the standard polishing effect evaluation value of the polishing liquid, that is is smaller, the reflux flow adjustment value is smaller. In order to analyze the similarity between the polishing effect evaluation value of the sapphire workpiece and the standard workpiece polishing effect evaluation value, when the polishing effect evaluation value of the sapphire workpiece is more similar to the standard workpiece polishing effect evaluation value, that is, when The smaller it is, the smaller the reflux flow rate adjustment value. Based on the evaluation results of the polishing effect of the comprehensive sapphire polishing liquid, the polishing effect of the sapphire workpiece, and the initial flow control speed of the sapphire polishing liquid, the reflux flow rate of the sapphire polishing liquid is adjusted and controlled, improving the accuracy of the adjustment and control of the reflux flow rate.

[0030] A sapphire polishing intelligent monitoring system based on reflux regulation, which is implemented based on the above-mentioned sapphire polishing intelligent monitoring method based on reflux regulation. It specifically includes a polishing data acquisition module, a polishing liquid effect evaluation module, a workpiece polishing evaluation module, and a reflux flow control module. Among them, the polishing data acquisition module is used to acquire sapphire polishing liquid particle quality data, uniformity data, sapphire workpiece smoothness data, and initial flow control speed data.

[0031] The polishing liquid effect evaluation module is used to evaluate the polishing effect of the sapphire polishing liquid based on the sapphire polishing liquid particle quality data and the uniformity data.

[0032] The workpiece polishing evaluation module is used to evaluate the polishing effect of the sapphire workpiece based on the sapphire workpiece smoothness data.

[0033] The reflux flow control module is used to adjust and control the reflux flow rate according to the evaluation results of the polishing effect of the sapphire polishing liquid, the evaluation results of the polishing effect of the sapphire workpiece, and the initial flow control speed data.

[0034] An electronic device includes: a processor and a memory. Among them, a computer program that can be called by the processor is stored in the memory.

[0035] The processor executes the above-mentioned sapphire polishing intelligent monitoring method based on reflux regulation by calling the computer program stored in the memory.

[0036] A computer-readable storage medium stores instructions. When the instructions run on a computer, the computer executes the above-mentioned sapphire polishing intelligent monitoring method based on reflux regulation.

[0037] Compared with the prior art, the beneficial effects of the present invention are as follows: The present invention acquires sapphire polishing liquid particle quality data, uniformity data, sapphire workpiece smoothness data, and initial flow control speed data, evaluates the polishing effect of the sapphire polishing liquid based on the sapphire polishing liquid particle quality data and the uniformity data, evaluates the polishing effect of the sapphire workpiece based on the sapphire workpiece smoothness data, and adjusts and controls the reflux flow rate according to the evaluation results of the polishing effect of the sapphire polishing liquid, the evaluation results of the polishing effect of the sapphire workpiece, and the initial flow control speed data, preventing uneven polishing caused by polishing liquid precipitation, and thus improving the optical performance of the sapphire workpiece. Description of the Drawings

[0038] Other features, objects, and advantages of the present application will become more apparent by reading the detailed description of the non-limiting embodiments with reference to the following drawings;

[0039] Figure 1 This is a schematic diagram of the overall process of the intelligent monitoring method for sapphire polishing based on reflux regulation in the present application.

[0040] Figure 2 This is a schematic diagram of the process of step S2 of the intelligent monitoring method for sapphire polishing based on reflux regulation in the present application.

[0041] Figure 3 This is a schematic diagram of the overall framework of the intelligent monitoring system for sapphire polishing based on reflux regulation in the present application.

[0042] Figure 4 This is a diagram of the implementation scenario of the present application Detailed implementation manners

[0043] To better understand the present application, various aspects of the present application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are only descriptions of the exemplary embodiments of the present application and do not limit the scope of the present application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0044] In the accompanying drawings, for ease of illustration, the sizes, dimensions, and shapes of the elements have been slightly adjusted. The drawings are for illustrative purposes only and are not drawn to an exact scale. As used herein, terms such as "substantially", "about", and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values that would be recognized by a person of ordinary skill in the art. Additionally, in this application, the order in which the steps of each process are described does not necessarily represent the order in which these processes occur in actual operation, unless otherwise specifically limited or derivable from the context. It should also be understood that expressions such as "comprising", "including", "having", "containing", and / or "including having" in this specification are open-ended rather than closed-ended expressions, which indicate the presence of the stated features, elements, and / or components, but do not exclude the presence of one or more other features, elements, components, and / or combinations thereof. Furthermore, when an expression such as "at least one of..." appears after a list of listed features, it modifies the entire list of features rather than just a single element in the list. Additionally, when describing embodiments of this application, the use of "may" indicates "one or more embodiments of this application". And the term "exemplary" is intended to refer to an example or illustration. Unless otherwise defined, all terms used herein (including engineering terms and scientific and technical terms) have the same meaning as the ordinary understanding of a person of ordinary skill in the art to which this application pertains. It should also be understood that unless specifically stated in this application, words defined in common dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense.

[0045] To solve the technical problems presented in the background art, this application provides a preferred embodiment: Please refer to Figure 4 As shown, it demonstrates the implementation scenario of this embodiment. The implementation scenario is as follows: Polishing data is collected from an information collection terminal, and the polishing data is transmitted to a data processing terminal, where the data processing terminal performs analysis and calculation to obtain the reflux flow control adjustment value.

[0046] The specific content of this embodiment is as follows:

[0047] As Figure 1 shown, a sapphire polishing intelligent monitoring system and method based on reflux regulation includes the following specific steps:

[0048] S1. Obtain sapphire polishing fluid particle quality data, uniformity data, sapphire workpiece smoothness data, and initial flow control speed data;

[0049] In this embodiment, the specific steps of S1 are as follows:

[0050] S11. Collect the sapphire polishing fluid particle quality data through a laser particle size analyzer. Among them, the sapphire polishing fluid particle quality data includes the particle size data and roundness data of the particles in the sapphire polishing fluid;

[0051] S12. Collect the sapphire polishing fluid uniformity data through a laser particle size analyzer and an optical microscope. Among them, the sapphire polishing fluid uniformity data includes the liquid concentration data and the particle distribution width data;

[0052] S13. Collect the sapphire workpiece smoothness data through a white light interferometer. Among them, the sapphire workpiece smoothness data includes the sapphire workpiece thickness data, the surface measurement area data, and the position height data of each measurement point;

[0053] S14. Obtain the initial flow control speed data through the flow control speed data stored in the storage component;

[0054] S15. Store the collected data in the storage component for use in the analysis process.

[0055] S2. Evaluate the polishing effect of the sapphire polishing fluid based on the sapphire polishing fluid particle quality data and the uniformity data;

[0056] As Figure 2 shown, in this embodiment, the evaluation of the polishing effect of the sapphire polishing fluid in S2 includes the following specific steps:

[0057] S21. Obtain the particle size data and roundness data of the particles in the sapphire polishing fluid, and obtain the sapphire polishing fluid particle quality evaluation value from the particle size data and roundness data of the particles in the sapphire polishing fluid;

[0058] S22. Obtain the liquid concentration data and the particle distribution width data of the sapphire polishing fluid, and obtain the sapphire polishing fluid uniformity evaluation value from the liquid concentration data and the particle distribution width data of the sapphire polishing fluid;

[0059] S23. Obtain the sapphire polishing fluid particle quality evaluation value and the uniformity evaluation value, and obtain the sapphire polishing fluid polishing effect evaluation value from the sapphire polishing fluid particle quality evaluation value and the uniformity evaluation value;

[0060] S24. Compare the polishing effect evaluation value of the sapphire polishing liquid with the set threshold value of the polishing effect evaluation value. If the polishing effect evaluation value of the sapphire polishing liquid is greater than the set threshold value of the polishing effect evaluation value, it indicates that the polishing effect of the sapphire polishing liquid is excellent. If the polishing effect evaluation value of the sapphire polishing liquid is equal to the set threshold value of the polishing effect evaluation value, it indicates that the polishing effect of the sapphire polishing liquid is qualified. If the polishing effect evaluation value of the sapphire polishing liquid is less than the set threshold value of the polishing effect evaluation value, it indicates that the polishing effect of the sapphire polishing liquid is unqualified. Evaluate the polishing effect of the sapphire polishing liquid by integrating the evaluation results of the particle quality and the uniformity of the sapphire polishing liquid, which improves the accuracy of the control parameters for adjusting the reflux flow rate of the sapphire polishing liquid.

[0061] In this embodiment, S21 specifically includes the following steps: Import the particle size data and roundness data in the sapphire polishing liquid into the calculation formula for the particle quality evaluation value of the sapphire polishing liquid to calculate the particle quality evaluation value of the sapphire polishing liquid. Among them, the calculation formula for the particle quality evaluation value of the sapphire polishing liquid is: , where is the standard deviation of the particle size, D is the average particle size, D0 is the set reference particle size, and d min is the minimum value of the particle roundness diameter, and d max is the maximum value of the particle roundness diameter, and a is the set weight of the particle size ratio. It should be noted here that measures the width of the particle size data distribution. The smaller the standard deviation of the particle size, the more concentrated the particle size data distribution. The larger the standard deviation of the particle size, the more dispersed the particle size data distribution. indicates that as the average particle size is farther away from the set reference particle size, the attenuation speed of the particle quality evaluation value of the sapphire polishing liquid is faster. The value-taking methods of the average particle size, the minimum value of the particle roundness diameter, and the maximum value of the particle roundness diameter in this formula are: Obtain the average particle size, the minimum value of the particle roundness diameter, and the maximum value of the particle roundness diameter through the data analysis software corresponding to the laser particle size analyzer.

[0062] In this embodiment, S22 specifically includes the following steps: Import the liquid concentration data and particle distribution width data in the sapphire polishing liquid into the calculation formula for the uniformity evaluation value of the sapphire polishing liquid to calculate the uniformity evaluation value. Among them, the calculation formula for the uniformity evaluation value is: , where C is the liquid concentration in the sapphire polishing liquid, C min is the set minimum liquid concentration, C max is the set maximum liquid concentration, W 90 is the value less than or equal to which 90% of the liquid particles in the sapphire polishing liquid are distributed, and W 10 is the value less than or equal to which 10% of the liquid particles in the sapphire polishing liquid are distributed.50 is the value of the distribution width of 50% of the liquid particles in the sapphire polishing liquid. Here, it should be noted that To analyze the similarity between the liquid concentration of the sapphire polishing liquid and the set liquid concentration, when the liquid concentration in the sapphire polishing liquid is more uniform, that is the smaller it is, the higher the evaluation value of the uniformity of the sapphire polishing liquid. To analyze the similarity of the particle distribution width in the sapphire polishing liquid, when the particle distribution width in the sapphire polishing liquid is more uniform, that is the smaller it is, the higher the evaluation value of the uniformity of the sapphire polishing liquid. The method for obtaining the liquid concentration value in the sapphire polishing liquid and the values of the distribution widths of 10%, 50%, and 90% of the liquid particles less than or equal to in the sapphire polishing liquid in this formula is as follows: Obtain the liquid concentration value in the sapphire polishing liquid through a laser particle size analyzer, and obtain the values of the distribution widths of 10%, 50%, and 90% of the liquid particles less than or equal to in the sapphire polishing liquid through an optical microscope.

[0063] In this embodiment, S23 specifically includes the following steps: Import the data of the sapphire polishing liquid particle quality evaluation value and the uniformity evaluation value into the calculation formula for the sapphire polishing liquid polishing effect evaluation value to calculate the polishing liquid polishing effect evaluation value. Among them, the calculation formula for the polishing liquid polishing effect evaluation value is: , where b is the proportion weight of the sapphire polishing liquid particle quality evaluation value. Here, it should be noted that when the data of the sapphire polishing liquid particle quality evaluation value and the uniformity evaluation value are smaller, the polishing liquid polishing effect evaluation value is smaller. Combining the sapphire polishing liquid particle quality evaluation value and the uniformity evaluation value improves the accuracy of the control parameters for adjusting the reflux flow rate of the sapphire polishing liquid.

[0064] S3. Evaluate the polishing effect of the sapphire workpiece based on the smoothness data of the sapphire workpiece;

[0065] In this embodiment, S3 specifically includes the following steps:

[0066] S31. Obtain the thickness data, surface measurement area data, and height data of each measurement point position of the sapphire workpiece;

[0067] S32. Import the thickness data, surface measurement area data, and height data of each measurement point position of the sapphire workpiece into the calculation formula for the sapphire workpiece polishing effect evaluation value to calculate the workpiece polishing effect evaluation value. Among them, the calculation formula for the workpiece polishing effect evaluation value is: , where H is the thickness of the sapphire workpiece, S is the surface measurement area of the sapphire workpiece, and h(x) is the height change of each measurement point position on the surface of the sapphire workpiece. Here, it should be noted that The average value of the height changes at each measurement point on the surface of the sapphire workpiece is used to represent the polishing effect of the workpiece. At the same time, the influence of the thickness of the sapphire workpiece on the evaluation value of the polishing effect of the sapphire workpiece is also comprehensively considered. In this formula, the data of the sapphire workpiece thickness, the surface measurement area data, and the height data of each measurement point position are obtained as follows: Use the probe of the white light interferometer to perform three-dimensional scanning on the sapphire workpiece to obtain the sapphire workpiece thickness distribution map and the surface contour map. Obtain the workpiece thickness data from the sapphire workpiece thickness distribution map, and obtain the surface measurement area data and the height data of each measurement point position from the sapphire surface contour map.

[0068] S4. Adjust the reflux flow rate control according to the evaluation result of the polishing effect of the sapphire polishing liquid, the evaluation result of the polishing effect of the sapphire workpiece, and the initial flow rate control speed data.

[0069] In this embodiment, S4 specifically includes the following steps:

[0070] S41. Obtain the evaluation value data of the polishing effect of the sapphire polishing liquid, the evaluation value data of the polishing effect of the sapphire workpiece, and the initial flow rate control speed data;

[0071] S42. Import the evaluation value data of the polishing effect of the sapphire polishing liquid, the evaluation value data of the polishing effect of the sapphire workpiece, and the initial flow rate control speed data into the reflux flow rate adjustment value calculation formula to calculate the reflux flow rate adjustment value. Among them, the reflux flow rate adjustment value calculation formula is: , where v0 is the initial flow rate control speed of the sapphire polishing liquid, is the set standard evaluation value of the polishing effect of the polishing liquid, is the reference fluctuation value of the evaluation value of the polishing effect of the polishing liquid, is the set standard evaluation value of the polishing effect of the workpiece, is the reference fluctuation value of the evaluation value of the polishing effect of the workpiece, c is the proportion weight of the evaluation value of the polishing effect of the polishing liquid. Here, it should be noted that in this formula In order to analyze the similarity between the evaluation value of the polishing effect of the polishing liquid and the standard evaluation value of the polishing effect of the polishing liquid, when the evaluation value of the polishing effect of the polishing liquid is more similar to the standard evaluation value of the polishing effect of the polishing liquid, that is is smaller, the reflux flow rate adjustment value is smaller. In order to analyze the similarity between the evaluation value of the polishing effect of the sapphire workpiece and the standard evaluation value of the polishing effect of the workpiece, when the evaluation value of the polishing effect of the sapphire workpiece is more similar to the standard evaluation value of the polishing effect of the workpiece, that is, when is smaller, the reflux flow rate adjustment value is smaller. Comprehensively adjust and control the reflux flow rate of the sapphire polishing liquid according to the evaluation result of the polishing effect of the sapphire polishing liquid, the evaluation result of the polishing effect of the sapphire workpiece, and the initial flow rate control speed of the sapphire polishing liquid, which improves the accuracy of the reflux flow rate adjustment control.

[0072] It should be noted here that the setting parameters (such as weights and thresholds, etc.) in this embodiment need to be set by those skilled in the art according to relevant experiments. The specific experimental method is as follows: Obtain the particle mass data and uniformity data of the sapphire polishing liquid, and bring them into each step in this embodiment to evaluate the polishing effect of the sapphire polishing liquid. At the same time, obtain the smoothness data of the sapphire workpiece, and bring it into each step in this embodiment to evaluate the polishing effect of the sapphire workpiece. Import the evaluation results of the sapphire polishing liquid polishing effect, the evaluation results of the sapphire workpiece polishing effect, and the initial flow rate control speed data of the sapphire polishing liquid into the fitting software for continuous fitting, and output the values of the reflux flow rate control setting parameters (such as weights and thresholds, etc.) with the highest compliance.

[0073] According to the above implementation content, this embodiment has the following advantages compared with the prior art: The present invention obtains the particle mass data, uniformity data, smoothness data of the sapphire workpiece, and initial flow rate control speed data of the sapphire polishing liquid. Based on the particle mass data and uniformity data of the sapphire polishing liquid, it evaluates the polishing effect of the sapphire polishing liquid. Based on the smoothness data of the sapphire workpiece, it evaluates the polishing effect of the sapphire workpiece. According to the evaluation results of the sapphire polishing liquid polishing effect, the evaluation results of the sapphire workpiece polishing effect, and the initial flow rate control speed data, it adjusts the reflux flow rate control to prevent uneven polishing caused by the precipitation of the polishing liquid, thereby improving the optical performance of the sapphire workpiece.

[0074] As Figure 3 shown, this embodiment also provides a sapphire polishing intelligent monitoring system based on reflux regulation, which is implemented based on the above-mentioned sapphire polishing intelligent monitoring method based on reflux regulation. It specifically includes a polishing data acquisition module, a polishing liquid effect evaluation module, a workpiece polishing evaluation module, and a reflux flow rate control module. Among them, the polishing data acquisition module is used to obtain the particle mass data, uniformity data, smoothness data of the sapphire workpiece, and initial flow rate control speed data of the sapphire polishing liquid; the polishing liquid effect evaluation module is used to evaluate the polishing effect of the sapphire polishing liquid based on the particle mass data and uniformity data of the sapphire polishing liquid; the workpiece polishing evaluation module is used to evaluate the polishing effect of the sapphire workpiece based on the smoothness data of the sapphire workpiece; the reflux flow rate control module is used to adjust the reflux flow rate control according to the evaluation results of the sapphire polishing liquid polishing effect, the evaluation results of the sapphire workpiece polishing effect, and the initial flow rate control speed data.

[0075] For the specific steps of each unit module in the above-mentioned anti-precipitation control system of the sapphire polishing liquid based on reflux regulation of the present application to achieve the corresponding functions, reference can be made to the steps in the embodiment of the above-mentioned sapphire polishing intelligent monitoring method based on reflux regulation, which will not be elaborated here.

[0076] This embodiment also provides an electronic device, including: a processor and a memory, wherein, a computer program that can be called by the processor is stored in the memory;

[0077] The processor executes the above-mentioned intelligent monitoring method for sapphire polishing based on reflux regulation by calling the computer program stored in the memory.

[0078] The memory can be used to store instructions, programs, codes, code sets or instruction sets. The memory 310 may include a program storage area and a data storage area. Among them, the program storage area can store instructions for implementing the operating system, instructions for at least one function, and instructions for implementing the intelligent monitoring method for sapphire polishing based on reflux regulation provided in the above embodiment, etc.; the data storage area can store data involved in the intelligent monitoring method for sapphire polishing based on reflux regulation provided in the above embodiment, etc.

[0079] The processor may include one or more processing cores. The processor runs or executes instructions, programs, code sets or instruction sets stored in the memory, calls data stored in the memory, and executes various functions of this application and processes data. The processor can be at least one of an application specific integrated circuit (ASIC), a digital signal processor (DSP), a digital signal processing device (DSPD), a programmable logic device (PLD), a field programmable gate array (FPGA), a central processing unit (CPU), a controller, a microcontroller, and a microprocessor. It can be understood that for different devices, the electronic devices for implementing the above-mentioned processor functions can also be others, and the embodiments of this application do not make specific limitations.

[0080] It may also include a communication bus. The communication bus may include a path for transmitting information between the above components. The communication bus can be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus, etc. The communication bus can be divided into an address bus, a data bus, a control bus, etc.

[0081] This embodiment also proposes a computer-readable storage medium storing instructions, which when run on a computer, cause the computer to execute the above-mentioned intelligent monitoring method for sapphire polishing based on reflux regulation.

[0082] For example, the computer-readable storage medium can be a read-only memory, a random access memory, a read-only optical disc, magnetic tape, floppy disk, and optical data storage device, etc.

[0083] The above embodiments can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using software, the above embodiments can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions or computer programs. When the computer instructions or computer programs are loaded or executed on a computer, the processes or functions according to the embodiments of the present application are generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via a wired network or / and a wireless network. The computer-readable storage medium can be any available medium that the computer can access, or a data storage device such as a server or data center that contains one or more collections of available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium. The semiconductor medium can be a solid-state drive.

[0084] The term "comprising", "including", or any other variant thereof is intended to cover a non-exclusive inclusion, such that a process, method, article, or device that comprises a series of elements includes not only those elements but also other elements not expressly listed, or elements that are inherent to such process, method, article, or device.

[0085] The above description is only a preferred embodiment of the present application and an explanation of the applied technical principle. Those skilled in the art should understand that the scope of the application involved in the present application is not limited to the technical solution formed by the specific combination of the above technical features, and should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the foregoing application concept. For example, the technical solutions formed by mutually replacing the above features with (but not limited to) technical features having similar functions in the present application.

Claims

1. An intelligent monitoring method for sapphire polishing based on reflux regulation, characterized in that, Including: S1. Obtain the particle quality data, uniformity data, smoothness data of the sapphire workpiece, and the initial flow control speed data of the sapphire polishing liquid; S2. Evaluate the polishing effect of the sapphire polishing liquid based on the particle quality data and uniformity data of the sapphire polishing liquid; S3. Evaluate the polishing effect of the sapphire workpiece based on the smoothness data of the sapphire workpiece; S4. Adjust the reflux flow control according to the evaluation result of the polishing effect of the sapphire polishing liquid, the evaluation result of the polishing effect of the sapphire workpiece, and the initial flow control speed data.

2. The intelligent monitoring method for sapphire polishing based on reflux regulation according to claim 1, wherein The specific steps for evaluating the polishing effect of the sapphire polishing liquid in S2 include: S21. Obtain the particle size data and roundness data of the particles in the sapphire polishing liquid, and obtain the particle quality evaluation value of the sapphire polishing liquid from the particle size data and roundness data of the particles in the sapphire polishing liquid; S22. Obtain the liquid concentration data and particle distribution width data in the sapphire polishing liquid, and obtain the uniformity evaluation value of the sapphire polishing liquid from the liquid concentration data and particle distribution width data in the sapphire polishing liquid; S23. Obtain the particle quality evaluation value and uniformity evaluation value of the sapphire polishing liquid, and obtain the polishing effect evaluation value of the sapphire polishing liquid from the particle quality evaluation value and uniformity evaluation value of the sapphire polishing liquid; S24. Compare the polishing effect evaluation value of the sapphire polishing liquid with the set polishing effect evaluation value threshold. If the polishing effect evaluation value of the sapphire polishing liquid is greater than the set polishing effect evaluation value threshold, it indicates that the polishing effect of the sapphire polishing liquid is excellent. If the polishing effect evaluation value of the sapphire polishing liquid is equal to the set polishing effect evaluation value threshold, it indicates that the polishing effect of the sapphire polishing liquid is qualified. If the polishing effect evaluation value of the sapphire polishing liquid is less than the set polishing effect evaluation value threshold, it indicates that the polishing effect of the sapphire polishing liquid is unqualified.

3. The intelligent monitoring method for sapphire polishing based on reflux regulation according to claim 1, wherein The specific steps of S21 are as follows: Import the particle size data and roundness data in the sapphire polishing liquid into the calculation formula of the particle quality evaluation value of the sapphire polishing liquid to calculate the particle quality evaluation value of the sapphire polishing liquid. Among them, the calculation formula of the particle quality evaluation value of the sapphire polishing liquid is: , where is the standard deviation of the particle size, D is the average particle size, D0 is the set reference particle size, dmin is the minimum value of the particle roundness diameter, dmax is the maximum value of the particle roundness diameter, and a is the set weight of the particle size proportion.

4. The intelligent monitoring method for sapphire polishing based on reflux regulation according to claim 3, characterized in that The specific steps of S22 are as follows: Import the liquid concentration data and the particle distribution width data in the sapphire polishing liquid into the calculation formula of the evaluation value of the uniformity of the sapphire polishing liquid. The calculation formula of the evaluation value of the uniformity is as follows: , where C is the liquid concentration in the sapphire polishing liquid, C min is the set minimum value of the liquid concentration, C max is the set maximum value of the liquid concentration, W 90 is the value less than or equal to which the particle distribution width of 90% of the liquid in the sapphire polishing liquid is, W 10 is the value less than or equal to which the particle distribution width of 10% of the liquid in the sapphire polishing liquid is, W 50 is the value less than or equal to which the particle distribution width of 50% of the liquid in the sapphire polishing liquid is.

5. The intelligent monitoring method for sapphire polishing based on reflux regulation according to claim 4, characterized in that The specific steps of S23 are as follows: Import the sapphire polishing liquid particle quality evaluation value data and the uniformity evaluation value data into the sapphire polishing liquid polishing effect evaluation value calculation formula to calculate the polishing effect evaluation value of the polishing liquid. Among them, the polishing effect evaluation value calculation formula of the polishing liquid is: , where b is the proportion weight of the sapphire polishing liquid particle quality evaluation value.

6. The intelligent monitoring method for sapphire polishing based on reflux regulation according to claim 5, wherein The specific steps of S3 are: S31. Obtain the thickness data of the sapphire workpiece, the surface measurement area data, and the position height data of each measurement point; S32. Import the sapphire workpiece thickness data, surface measurement area data, and the height data of each measurement point position into the calculation formula for the evaluation value of the sapphire workpiece polishing effect to calculate the evaluation value of the workpiece polishing effect. The calculation formula for the evaluation value of the workpiece polishing effect is as follows: , where H is the thickness of the sapphire workpiece, S is the surface measurement area of the sapphire workpiece, and h(x) is the height change of each measurement point position on the surface of the sapphire workpiece.

7. The intelligent monitoring method for sapphire polishing based on reflux regulation according to claim 6, wherein The specific steps of S4 are: S41. Obtain the polishing effect evaluation value data of the sapphire polishing liquid, the polishing effect evaluation value data of the sapphire workpiece, and the initial flow control speed data; S42. Import the data of the evaluation value of the polishing effect of the sapphire polishing liquid, the data of the evaluation value of the polishing effect of the sapphire workpiece, and the initial flow control speed data into the calculation formula of the reflux flow adjustment value. The calculation formula of the reflux flow adjustment value is as follows: , where v0 is the initial flow control speed of the sapphire polishing liquid, is the set standard evaluation value of the polishing effect of the polishing liquid, is the set reference fluctuation value of the evaluation value of the polishing effect of the polishing liquid, is the set standard evaluation value of the polishing effect of the workpiece, is the set reference fluctuation value of the evaluation value of the polishing effect of the workpiece, and c is the proportion weight of the evaluation value of the polishing effect of the polishing liquid.

8. The sapphire polishing intelligent monitoring system based on reflux regulation is implemented based on the sapphire polishing intelligent monitoring method based on reflux regulation according to any one of claims 1-7, and is characterized in that, Specifically, it includes a polishing data acquisition module, a polishing liquid effect evaluation module, a workpiece polishing evaluation module, and a reflux flow control module. Among them, the polishing data acquisition module is used to obtain the particle quality data, uniformity data, smoothness data of the sapphire workpiece, and the initial flow control speed data of the sapphire polishing liquid; The polishing liquid effect evaluation module is used to evaluate the polishing effect of the sapphire polishing liquid based on the particle quality data and uniformity data of the sapphire polishing liquid; The workpiece polishing evaluation module is used to evaluate the polishing effect of the sapphire workpiece based on the smoothness data of the sapphire workpiece; The reflux flow control module is used to adjust the reflux flow control according to the evaluation result of the polishing effect of the sapphire polishing liquid, the evaluation result of the polishing effect of the sapphire workpiece, and the initial flow control speed data.

9. An electronic device, comprising: A processor and a memory, wherein the memory stores a computer program that can be called by the processor; It is characterized in that the processor executes the intelligent monitoring method for sapphire polishing based on reflux regulation as described in any one of claims 1-7 by calling the computer program stored in the memory.

10. A computer-readable storage medium, characterized in that, Stored with instructions, when the instructions run on a computer, the computer is caused to execute the intelligent monitoring method for sapphire polishing based on reflux regulation as described in any one of claims 1-7.

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