Electron detector
By using closed structure isolation components and voltage control in electronic multiplier devices, the dependence of electronic multiplier devices on environmental vacuum is solved, achieving higher signal amplification efficiency and lower environmental pollution sensitivity.
Patent Information
- Application Number
- CN202510334383.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-20
- Publication Date
- 2025-07-08
AI Technical Summary
Existing electronic multiplier devices have high requirements for environmental vacuum during storage, assembly, transportation and use, and are susceptible to contamination of tiny particles and gas molecules, resulting in failure.
The first isolation component and the second isolation component are used to form a closed space, and the electronic multiplication device is packaged. The isolation component serves as a pressure-resistant window to reduce environmental pollution, and signal amplification is achieved through voltage control.
It improves the amplification of electronic signals, reduces the requirements for environmental vacuum, protects the devices from contamination, and is easy to store, assemble and transport.
Smart Images
Figure CN120280328A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of electronic gain, and particularly to an electronic detector. Background Art
[0002] An electron multiplier device is a vacuum detector that can amplify weak electronic signals and is widely used in fields such as mass spectrometers, medical imaging, astronomy, and space research. Commonly used electron multiplier devices include electron multiplier tubes, single-channel electron multipliers, and microchannel plates, etc.
[0003] Currently, most of these devices belong to an open structure, and tiny particles or gas molecules in the environment are easily adsorbed inside the device, which may seriously lead to device failure in severe cases. Therefore, such electron multiplier devices have very high requirements for the environmental vacuum degree during storage, assembly, transportation, and use. Summary of the Invention
[0004] In view of this, the present invention provides an electronic detector to solve the problem that the existing electron multiplier devices have very high requirements for the environmental vacuum degree during storage, assembly, transportation, and use.
[0005] In a first aspect, the present invention provides an electronic detector, which includes: a first isolation component, a second isolation component, and an electron multiplier device;
[0006] The first isolation component is spaced apart and arranged on the incident surface of the electron multiplier device, the second isolation component is spaced apart and arranged on the exit surface of the electron multiplier device, and a closed space is formed based on the first isolation component and the second isolation component, and the electron multiplier device is arranged in the closed space, wherein both the first isolation component and the second isolation component transmit electrons;
[0007] The incident electron beam sequentially passes through the first isolation component, the electron multiplier device, and the second isolation component and then is output to a receiving electrode.
[0008] For the electronic detector proposed by the present invention, the closed space formed by the first isolation component and the second isolation component isolates the electron multiplier device from the outside, that is, the electron multiplier device is encapsulated. Thus, compared with the traditional open electron multiplier device, the problem that tiny particles and gas molecules in the environment are easily adsorbed inside the device, which may seriously lead to device failure in severe cases, in this application, the first isolation component and the second isolation component are used as pressure-resistant windows, which can be protected from contamination by tiny particles or gas molecules in the environment, and voltage control is performed on the electronic detector, so that the electronic detector can further improve the amplification factor of electronic signals and can also reduce the requirements for the environmental vacuum degree of the electronic detector during storage, assembly, transportation, and use.
[0009] In an alternative embodiment, the voltages of the electron detector and the collector are controlled such that the first isolation member and the second isolation member amplify the incident electron beam respectively.
[0010] In an alternative embodiment, a first electrode is disposed on the incident surface of the first isolation member, a second electrode is disposed on the incident surface of the electron multiplier device, a third electrode is disposed on the exit surface of the electron multiplier device, a fourth electrode is disposed on the incident surface of the second isolation member, and a fifth electrode is disposed on the collector;
[0011] The pressure difference between the first electrode and the second electrode is within a first preset range;
[0012] The pressure difference between the third electrode and the fourth electrode is within a second preset range;
[0013] The pressure difference between the fourth electrode and the fifth electrode is within a third preset range.
[0014] In an alternative embodiment, both the first isolation member and the second isolation member include a base member and a thin film member. The thin film member is disposed on the window structure of the base member, and the window structure includes a single window structure or a multi-window structure.
[0015] In an alternative embodiment, the thin film member is made of gold or titanium nitride.
[0016] In an alternative embodiment, a conductive layer is disposed on the incident surface of the thin film member.
[0017] In an alternative embodiment, the thin film member is made of silicon nitride.
[0018] In an alternative embodiment, the area of the thin film member is larger than the area of the electron beam incident on the position of the thin film member.
[0019] In an alternative embodiment, the thickness of the thin film member is determined according to the electron energy incident on the thin film member.
[0020] In an alternative embodiment, the enclosed space is in a vacuum state, and the pressure in the enclosed space is lower than a preset pressure. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0022] Figure 1 It is a structural diagram of an electronic detector according to an embodiment of the present invention;
[0023] Figure 2 It is a schematic diagram of a first isolation component and a second isolation component in an electronic detector according to an embodiment of the present invention.
[0024] Explanation of the reference numerals in the drawings:
[0025] 1 - First isolation component; 2 - Electron multiplication device; 3 - Second isolation component; 4 - Collector; 5 - 1 - First electrode; 5 - 2 - Second electrode; 5 - 3 - Third electrode; 5 - 4 - Fourth electrode; 5 - 5 - Fifth electrode; 6 - Incident electrons; 7 - Emitted electrons; 8 - Substrate; 9 - Thin film component; 10 - Electron incident surface; 11 - Electron emission surface. Detailed implementation manners
[0026] Next, the technical solutions of the present invention will be clearly and completely described in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.
[0027] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. In addition, the terms "first", "second", "third" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.
[0028] In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, the terms "installed", "connected", "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and can also be the internal communication of two components. It can be a wireless connection or a wired connection. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.
[0029] In addition, the technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.
[0030] An electron multiplier device is a vacuum detector that can amplify weak electronic signals and is widely used in fields such as mass spectrometers, medical imaging, astronomy, and space research. Commonly used electron multiplier devices include electron multiplier tubes, single-channel electron multipliers, and microchannel plates, etc.
[0031] Currently, most of these devices belong to an open structure, and tiny particles and gas molecules in the environment are easily adsorbed inside the devices, which may cause the devices to fail severely. Therefore, this type of electron multiplier device has very high requirements for the environmental vacuum degree during storage, assembly, transportation, and use.
[0032] In response to this, in this embodiment, an electron detector is provided, as Figure 1 shown. The electron detector includes: a first isolation component 1, a second isolation component 3, and an electron multiplier device 2;
[0033] The first isolation component 1 is disposed at intervals on the incident surface of the electron multiplier device 2, and the second isolation component 3 is disposed at intervals on the exit surface of the electron multiplier device 2, and a closed space is formed based on the first isolation component 2 and the second isolation component 3, and the electron multiplier device 2 is disposed inside the closed space;
[0034] The incident electron beam is transmitted to the receiving electrode 4 after passing through the first isolation component 1, the electron multiplier device 2, and the second isolation component 3 in sequence.
[0035] Specifically, referring to Figure 1 , both the first isolation component 1 and the second isolation component 3 transmit electrons, that is, both the first isolation component 1 and the second isolation component 3 can pass the electron beam. A closed space is formed based on the first isolation component 1, the second isolation component 3, and the closed wall. The closed wall can be made of any material, and specifically, stainless steel can be selected. The first isolation component 1 is disposed parallel to the incident surface of the electron multiplier device 2, and the second isolation component 3 is disposed parallel to the exit surface of the electron multiplier device 2. Of course, the first isolation component 1 may not be parallel to the incident surface of the electron multiplier device 2, and the second isolation component 3 may not be parallel to the exit surface of the electron multiplier device 2, which is not limited herein.
[0036] Specifically, referring to Figure 1 , the incident electron 6 is transmitted to the incident surface of the first isolation component 1, passes through the first isolation component 1 and then is transmitted to the incident surface of the electron multiplier device 2 through the exit surface of the first isolation component 1, passes through the electron multiplier device 2 and then is transmitted to the incident surface of the second isolation component 3 through the exit surface of the electron multiplier device 2, passes through the second isolation component 3 and then the exit electrons 7 are transmitted out through the exit surface of the second isolation component 3, and finally the exit electrons 7 are transmitted to the receiving end.
[0037] It should be noted that the top view of the closed space of the electron detector can be a rectangle or a trapezoid, that is, the length of the first isolation component 1 in the top view is shorter than the length of the second isolation component 3 in the top view. The distances between the first isolation component 1 and the electron multiplier device 2, and between the electron multiplier device 2 and the second isolation component 3 can be determined according to the actual situation, the size of the electron detector, and the area of the incident and outgoing electron beams, and are not limited here.
[0038] In the electron detector proposed by the present invention, the closed space formed by the first isolation component 1 and the second isolation component 3 isolates the electron multiplier device 2 from the outside, that is, the electron multiplier device 2 is encapsulated. Thus, compared with the traditional open electron multiplier device, tiny particles and gas molecules in the environment are likely to be adsorbed inside the device, and in severe cases, it will cause the problem of device failure. In this application, the first isolation component 1 and the second isolation component 3 are used as pressure-resistant windows, which can be protected from contamination by tiny particles or gas molecules in the environment, and can also reduce the requirements for the environmental vacuum degree of the electron detector during storage, assembly, transportation, and use.
[0039] In some optional embodiments, such as Figure 1 shown, control the voltages of the electron detector and the collecting electrode 4 so that the first isolation component 1 and the second isolation component 3 respectively amplify the incident electron beam.
[0040] It should be noted that by controlling the voltages of the electron detector and the collecting electrode 4, the incident electron beam can still have a signal amplification function at the first isolation component 1 and the second isolation component 3 respectively. When the electron beam passes through the first isolation component 1 and the second isolation component 3, it has the function of electron signal amplification. Therefore, the electron beams passing through the first isolation component 1, the electron multiplier device 2, and the second isolation component 3 respectively can further improve the amplification factor of the electron signal, and thus improve the amplification performance.
[0041] Specifically, referring to Figure 1 , the incident electron beam is amplified by the first isolation component 1 and then transmitted to the electron multiplier device 2. The electron beam passing through the electron multiplier device 2 is amplified again and then transmitted to the second isolation component 3. The electron beam passing through the second isolation component 3 is amplified again and then transmitted to the collecting electrode 4. Thus, the electron detector can further improve the amplification factor of the electron signal. Optionally, the voltages of the electron detector and the collecting electrode 4 can be controlled specifically by setting electrodes for the electron detector and the collecting electrode 4.
[0042] In some optional embodiments, such as Figure 1As shown, a first electrode 5-1 is provided on the incident surface of the first isolation component 1, a second electrode 5-2 is provided on the incident surface of the electron multiplier device 2, a third electrode 5-3 is provided on the exit surface of the electron multiplier device 2, a fourth electrode 5-4 is provided on the incident surface of the second isolation component 3, and a fifth electrode 5-5 is provided on the receiving electrode 4;
[0043] The pressure difference between the first electrode 5-1 and the second electrode 5-2 is within a first preset range;
[0044] The pressure difference between the third electrode 5-3 and the fourth electrode 5-4 is within a second preset range;
[0045] The pressure difference between the fourth electrode 5-4 and the fifth electrode 5-5 is within a third preset range.
[0046] Specifically, referring to Figure 1 , the second electrode 5-2, the third electrode 5-3, and the fourth electrode 5-4 are led out in a closed electron detector. The potentials of the first electrode 5-1, the second electrode 5-2, the third electrode 5-3, the fourth electrode 5-4, and the fifth electrode 5-5 increase in sequence. Different voltages are respectively applied to the first electrode 5-1, the second electrode 5-2, the third electrode 5-3, the fourth electrode 5-4, and the fifth electrode 5-5, so that the electron beams passing through the first isolation component 1, the electron multiplier device 2, and the second isolation component 3 all have an amplifying effect. At the same time, the pressure differences between the first electrode 5-1 and the second electrode 5-2, between the third electrode 5-3 and the fourth electrode 5-4, and between the fourth electrode 5-4 and the fifth electrode 5-5 all meet the preset range, thereby improving the working effect of the electron multiplier device 2.
[0047] Exemplarily, the first preset range is between 50V and 200V, the second preset range is greater than 3KV, and the third preset range is between 50V and 200V. Optionally, the first electrode 5-1 can be set to -4200V, the second electrode 5-2 can be set to -4100V, the third electrode 5-3 can be set to -3100V, the fourth electrode 5-4 can be set to -100V, and the fifth electrode 5-5 can be set to 0V, so that the electron multiplier device 2 and the first isolation component 1 and the second isolation component 3 work in an optimal state.
[0048] That is to say, the electron detector of the present application has two advantages. One is that the electron multiplier device is placed between two thin films, and the thin films can protect the device from contamination and are easy to store, assemble, transport, and use; the other is that both thin films have the effect of transmitting electron gain, which can further increase the electron signal amplification factor of the electron multiplier device, that is, the detector has a low requirement for the environmental vacuum degree and a larger electron signal amplification factor.
[0049] In some alternative embodiments, such as Figure 2 shown, both the first isolation member 1 and the second isolation member 3 include a base member 8 and a thin film member 9. The thin film member 9 is disposed on a window structure of the base member 8, and the window structure includes a single window structure or a multi-window structure.
[0050] Specifically, the first isolation member 1 includes a first base member and a first thin film member, and the second isolation member 3 includes a second base member and a second thin film member. Referring to Figure 2 , Figure 2 being a single window structure, the base member 8 can be a silicon substrate, Figure 2 in which 10 is the electron incident surface and 11 is the electron exit surface. The base member 8 is fixedly adhesively connected to the closed wall. It should be noted that the window structure includes a single window structure. A window is etched on the base member 8, and the thin film member 9 is adhered to the base member 8. Only the thin film member 9 is in the window, and the electron beam is transmitted through the thin film member 9 on the window. Alternatively, after the thin film member 9 is grown on the base member 8, the silicon substrate at the single window position is etched away on the back surface or by other means. Of course, the single window structure can also be, for example, Figure 2 shown with a silicon substrate only disposed around the thin film member 9.
[0051] Specifically, the window structure further includes a multi-window structure (not shown in the figure). The multi-window structure is obtained by etching the base member 8 under the thin film to form multiple windows, and the thin film member 9 is adhered to the base member 8. Only the thin film member 9 is in each window. Alternatively, after the thin film member 9 is grown on the base member 8, the base member 8 at the multi-window position is etched away on the back surface or by other means. The multi-window structure can be used for a thin film with a relatively large electron incident area to achieve a support effect.
[0052] It should be noted that, depending on the installation directions of the first isolation member 1 and the second isolation member 3 with respect to the closed wall, taking 10 as the electron exit surface and 11 as the electron incident surface, there is no limitation here.
[0053] In some alternative embodiments, the thin film member 9 is made of gold or titanium nitride.
[0054] Specifically, the thin film member 9 can be a thin film with good conductivity, such as a thin film made of gold or titanium nitride. It should be understood that there is no limitation on the thin film with good conductivity here.
[0055] In some alternative embodiments, a conductive layer is provided on the incident surface of the thin film member 9.
[0056] Specifically, the thin film member 9 can be a non-conductive thin film. In this case, a conductive layer is deposited on the non-conductive thin film.
[0057] In some alternative embodiments, the thin film member 9 is made of silicon nitride.
[0058] Specifically, the thin film member 9 is a non-conductive thin film, such as silicon nitride. It should be understood that the non-conductive thin film is not limited herein.
[0059] Exemplarily, silicon nitride can be specifically grown on the substrate member 8.
[0060] In some alternative embodiments, such as Figure 1 as shown, the area of the thin film member 9 is larger than the area of the electron beam incident on the position of the thin film member 9.
[0061] Specifically, referring to Figure 1 , the first thin film member position includes the incident surface and the exit surface of the first thin film member, and the second thin film member position includes the incident surface and the exit surface of the second thin film member. That is, the area of the first thin film member is larger than the area where the incident electron 6 is incident on the first thin film member, and the area of the second thin film member is larger than the area where the electron multiplier device 2 emits the electron beam to the second thin film member. If the substrate member 8 has a multi-window structure, the area of the first thin film member is the sum of the thin film areas on each window structure, and the area of the second thin film member is the sum of the thin film areas on each window structure.
[0062] It should be noted that the size of the second thin film member is determined according to the exit area of the electron multiplier device 2 and the distance between the exit end of the electron multiplier device 2 and the second thin film member. And the size of the first thin film member is determined according to the electron area of the incident electron 6 and the distance between the electron source of the incident electron 6 and the first thin film member.
[0063] In some alternative embodiments, such as Figure 1 as shown, the thickness of the thin film member 9 is determined according to the electron energy incident on the thin film member 9.
[0064] Specifically, the thickness of the thin film member 9 is determined according to the electron energy incident on the upper surface of the thin film member 9 such that the number of electrons exiting from the transmission surface is greater than the number of incident electrons. That is, the thickness of the first thin film member is determined according to the electron energy incident on the upper surface of the first thin film member, and the thickness of the second thin film member is determined according to the electron energy incident on the upper surface of the second thin film member. The thicknesses of the first thin film member and the second thin film member can be determined by the Monte Carlo simulation method. It should be noted that if the thickness of the first thin film member or the second thin film member is too thin, there is a risk that the thin film member cannot withstand the pressure and will break. Optionally, the thickness of the first thin film member and / or the second thin film member can be specifically 10 nm.
[0065] In some alternative embodiments, the enclosed space is in a vacuum state, and the pressure in the enclosed space is lower than a preset pressure.
[0066] Specifically, the enclosed space is in a vacuum state, and the electron multiplier device 2 operates in a vacuum environment. When performing vacuum enclosure through the first isolation component 1, the second isolation component 3 and the enclosure wall, first leave an outlet, evacuate the vacuum through the outlet, and finally seal the outlet. It should be noted that the pressure in the enclosed space is lower than the preset pressure, and the preset pressure can specifically be 1×10 -4 Pa.
[0067] In addition, it should be noted that the method of evacuating the vacuum can also be other methods, which are not limited herein.
[0068] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations all fall within the scope defined by the appended claims.
Claims
1. An electronic detector, characterized in that, The electronic detector includes: a first isolation component, a second isolation component, and an electron multiplier device; The first isolation component is disposed at an interval on the incident surface of the electron multiplier device, the second isolation component is disposed at an interval on the exit surface of the electron multiplier device, and a closed space is formed based on the first isolation component and the second isolation component, and the electron multiplier device is disposed in the closed space, wherein both the first isolation component and the second isolation component transmit electrons; The incident electron beam sequentially passes through the first isolation component, the electron multiplier device, and the second isolation component and then is output to the receiving electrode.
2. The electronic detector according to claim 1, characterized in that, Control the voltages of the electronic detector and the receiving electrode such that the first isolation component and the second isolation component respectively amplify the incident electron beam.
3. The electronic detector according to claim 2, characterized in that, A first electrode is disposed on the incident surface of the first isolation component, a second electrode is disposed on the incident surface of the electron multiplier device, a third electrode is disposed on the exit surface of the electron multiplier device, a fourth electrode is disposed on the incident surface of the second isolation component, and a fifth electrode is disposed on the receiving electrode; The pressure difference between the first electrode and the second electrode is within a first preset range; The pressure difference between the third electrode and the fourth electrode is within a second preset range; The pressure difference between the fourth electrode and the fifth electrode is within a third preset range.
4. The electronic detector according to claim 1, characterized in that, Both the first isolation component and the second isolation component include a base member and a thin film member, the thin film member is disposed on a window structure of the base member, and the window structure includes a single window structure or a multi-window structure.
5. The electronic detector according to claim 4, wherein The thin film member is made of gold or titanium nitride.
6. The electronic detector according to claim 4, characterized in that, A conductive layer is disposed on the incident surface of the thin film member.
7. The electronic detector according to claim 6, characterized in that, The thin film member is made of silicon nitride.
8. The electronic detector according to claim 4, wherein The area of the thin film member is larger than the area of the electron beam incident on the position of the thin film member.
9. The electronic detector according to claim 4, wherein Determine the thickness of the thin film member according to the electron energy incident on the thin film member.
10. The electronic detector according to claim 1, characterized in that, The closed space is in a vacuum state, and the pressure in the closed space is lower than a preset pressure.