Conversion structure from waveguide to single-layer substrate integrated waveguide structure and electronic equipment

Abstract

The present invention relates to the field of conversion structures, and specifically relates to a conversion structure from a waveguide to a single-layer substrate integrated waveguide structure and an electronic device. The conversion structure comprises a first connection structure from the waveguide to the conversion structure and a second connection structure from the conversion structure to the single-layer substrate integrated waveguide structure. The first connection structure is a wedge-shaped structure and a connected first dielectric substrate. The wedge-shaped structure comprises a pair of symmetrical wedges whose width gradually narrows from the proximal end to the distal end, and the wedge-shaped structure is composed of a multi-layer substrate arranged from top to bottom, wherein the wedge-shaped structure is provided with a non-metallized hole. The first connection structure and the second connection structure are designed, wherein the first connection structure is a combination of the wedge-shaped structure and the non-metallized hole, and the second connection structure is a combination of the stepped dielectric substrate and the semi-metallic hole. Impedance matching control is achieved, and the structure is easy to integrate and assemble. The assembly process is simple, electromagnetic wave leakage can be effectively avoided, and the radiation efficiency and gain stability of the antenna are improved.

Description

Technical Field

[0001] The present invention relates to the field of conversion structures, and in particular to a conversion structure from a waveguide to a single-layer substrate integrated waveguide structure and an electronic device. Background Art

[0002] Currently, automotive millimeter-wave radars with high-precision, long-range detection capabilities play a key role. These radars typically operate in the 76 GHz to 81 GHz frequency band. However, they face challenges in practical applications. The antennas used in automotive millimeter-wave radars are relatively small, making them difficult to design and manufacture, requiring high process precision. Furthermore, machining errors have a significant impact on the performance of automotive millimeter-wave radars, causing distortion in the antenna's radiation pattern and reduced gain, which in turn affects the radar's detection accuracy.

[0003] It is usually difficult to evaluate the performance of antennas used in automotive radars using traditional conversion structures. The conversion structure is one of the important components of the antenna or feeder, and its performance is directly related to whether the antenna can operate stably. The conversion structure can be mainly divided into vertical conversion structure and parallel conversion structure.

[0004] In order to achieve electromagnetic energy transmission, the various parts of the vertical conversion structure need to fit tightly together. If there are gaps between the parts or the fit is not tight, it may cause leakage of electromagnetic energy. The leakage will not only reduce the radiation efficiency of the antenna and shorten the detection distance of the radar, but may also cause signal interference and affect the normal operation of the radar system.

[0005] The design process of the parallel conversion structure is relatively complicated. The parallel conversion structure involves complex electromagnetic field distribution and signal transmission path design, and needs to consider the mutual influence of multiple factors, which increases the difficulty and cycle of design. In addition, due to its complex structure and design principles, the parallel conversion structure is not suitable for the measurement of related devices such as automotive radar antennas. Summary of the Invention

[0006] In response to the problems mentioned in the prior art, the present invention proposes a conversion structure and electronic device from a waveguide to a single-layer substrate integrated waveguide structure. The conversion structure has a simple design process, good performance, and can accurately evaluate the performance of related microwave devices such as automotive radar antennas.

[0007] In order to achieve the above object, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a waveguide to single-layer substrate integrated waveguide structure conversion structure, comprising a first connecting structure and a second connecting structure connected to each other;

[0009] comprising a first connecting structure and a second connecting structure connected to each other;

[0010] The first connection structure includes a connected wedge-shaped structure and a first dielectric substrate. The wedge-shaped structure includes a pair of symmetrical wedge-shaped structure bodies whose width gradually narrows from the proximal end to the distal end. The wedge-shaped structure bodies are composed of multiple layers of substrates arranged sequentially from top to bottom, wherein each layer of the substrate is provided with a non-metallized hole.

[0011] The second connection structure includes a second dielectric substrate. Both the first and second dielectric substrates are provided with semi-metallic holes. The second dielectric substrate has a stepped structure that gradually descends along a first direction. The first direction is from an end of the second connection structure close to the first connection structure to an end of the second connection structure away from the first connection structure.

[0012] As a further improvement of the present invention, the proximal end of the wedge-shaped structure is connected to the first dielectric substrate, and the distal end is connected to the waveguide;

[0013] The number of substrate layers of the wedge-shaped structure is equal to the number of layers of the first dielectric substrate.

[0014] As a further improvement of the present invention, the non-metallized holes are evenly arranged along the length direction of the wedge-shaped structure (11), wherein the spacing between adjacent non-metallized holes is 0.6 mm.

[0015] As a further improvement of the present invention, the non-metallized holes are divided into multiple groups, and the aperture of each group of non-metallized holes gradually decreases with a difference of 0.1 mm along the direction from the proximal end to the distal end of the wedge-shaped structure body.

[0016] As a further improvement of the present invention, the top layer and the bottom layer of the first dielectric substrate and the second dielectric substrate are both metal layers.

[0017] As a further improvement of the present invention, the upper and lower side surfaces of the second dielectric substrate are both symmetrical stepped structures.

[0018] As a further improvement of the present invention, the thickness of the stepped structure decreases in sequence with a difference of 0.127 mm.

[0019] As a further improvement of the present invention, the semi-metal holes are arranged in two rows, and the semi-metal holes are not arranged through;

[0020] The spacing between adjacent half-metal holes is the same.

[0021] As a further improvement of the present invention, the second dielectric substrate adjusts the impedance matching by adjusting the middle distance between the two rows of half-metal holes.

[0022] In a second aspect, the present invention provides an electronic device comprising a conversion structure from a waveguide to a single-layer substrate integrated waveguide structure as described above.

[0023] Compared with the prior art, the present invention has achieved the following technical effects:

[0024] The conversion structure of the present invention utilizes a first connection structure and a second connection structure, wherein the first connection structure is a combination of a wedge-shaped structure and a non-metallized hole, and the second connection structure is a combination of a stepped dielectric substrate and a semi-metallic hole, thereby achieving impedance matching control. Compared to traditional vertical conversion structures, the present invention is easy to integrate and assemble, simplifying the assembly process while effectively preventing electromagnetic wave leakage, thereby improving the antenna's radiation efficiency and gain stability. Impedance matching is adjusted by adjusting the spacing between the semi-metallic holes, a simple and convenient adjustment method that simplifies the impedance matching adjustment process. Furthermore, the conversion structure can adapt to the dimensional characteristics of a single-layer substrate integrated waveguide, resolving the signal loss problem caused by the complex path design of traditional parallel conversion structures. This provides a highly reliable testing basis for the performance evaluation of automotive millimeter-wave radar antennas. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0026] Figure 2 This is a schematic diagram of the first connection structure of the present invention;

[0027] Figure 3 This is a schematic diagram of the second connection structure of the present invention;

[0028] Figure 4 Schematic diagram of the dimensions of the first connection structure of the present invention;

[0029] Figure 5 is a schematic diagram of the dimensions of the second connection structure of the present invention;

[0030] Figure 6 Schematic diagram of the simulation of the conversion structure of the present invention.

[0031] Reference numerals: 1, first connection structure; 11, wedge-shaped structure; 12, first dielectric substrate; 2, second connection structure; 21, second dielectric substrate. DETAILED DESCRIPTION

[0032] Hereinafter, only certain exemplary embodiments are briefly described. As will be appreciated by those skilled in the art, the described embodiments may be modified in various ways without departing from the spirit or scope of the present invention. Therefore, the drawings and description are to be considered as illustrative in nature and not restrictive.

[0033] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0034] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0035] In the present invention, unless otherwise expressly specified or limited, terms such as "mounted," "connected," "connect," and "fixed" should be understood broadly. For example, they may refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection, or communication; direct connection or indirect connection through an intermediate medium; and internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0036] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Furthermore, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0037] It will be understood that when used in this specification and the appended claims, the terms “comprises” and “comprising” indicate the presence of described features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0038] It should also be understood that the terms used in the present specification are only for the purpose of describing particular embodiments and are not intended to limit the present invention. As used in the present specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms unless the context clearly indicates otherwise.

[0039] It should be further understood that the term "and / or" used in the present description and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0040] The accompanying drawings illustrate various schematic diagrams of structures according to embodiments disclosed herein. These figures are not drawn to scale; for clarity, some details are exaggerated and some details may be omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are merely exemplary and may deviate in practice due to manufacturing tolerances or technical limitations. Those skilled in the art may design regions / layers with different shapes, sizes, and relative positions as needed.

[0041] The embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0042] like Figure 1 The figure shows a conversion structure from a waveguide to a single-layer substrate integrated waveguide structure of the present invention. The conversion structure includes a first connection structure 1 and a second connection structure 2 that are connected.

[0043] The first connection structure 1 includes a connected wedge-shaped structure 11 and a first dielectric substrate 12. The wedge-shaped structure 11 is a pair of symmetrical wedge-shaped structure bodies with a width gradually narrowing from the proximal end to the distal end. The wedge-shaped structure body is composed of multiple layers of substrates arranged in sequence from top to bottom, wherein each layer of the substrate is provided with non-metallized holes.

[0044] The second connection structure 2 includes a second dielectric substrate 21. Semi-metal holes are provided on both the first dielectric substrate 12 and the second dielectric substrate 21. The second dielectric substrate 21 has a stepped structure that gradually descends along a first direction. The first direction is from an end of the second connection structure 2 close to the first connection structure 1 to an end of the second connection structure 2 away from the first connection structure 1.

[0045] Implementation example Figure 1 and Figure 2 As shown, the first dielectric substrate 12 in the first connection structure 1 of the present invention is connected to the second connection structure 2, the second connection structure 2 is connected to the single-layer substrate integrated waveguide structure, and the wedge-shaped structure 11 in the first connection structure 1 is connected to the interface on the waveguide, thereby realizing waveguide transmission.

[0046] like Figure 2 As shown, the first connection structure 1 in the embodiment includes a wedge-shaped structure 11 and a first dielectric substrate 12. The wedge-shaped structure 11 and the first dielectric substrate 12 are connected in a bonded manner. Figure 2 As shown in , specifically, the proximal end (wide side) of the wedge-shaped structure 11 is connected to the first dielectric substrate 12, and the distal end (narrow side) of the wedge-shaped structure 11 is connected to the waveguide.

[0047] The wedge-shaped structure 11 in this embodiment can improve the impedance matching between the waveguide and the conversion structure of the device, thereby enabling electromagnetic energy to be more efficiently transferred from the waveguide to the conversion structure of the device.

[0048] In the embodiment, the wedge-shaped structure 11 is preferably formed by stacking five layers of substrates in sequence, each layer of substrate is provided with non-metallized holes, and the positions of the non-metallized holes in each layer correspond to each other; Figure 4 As shown, the non-metallized holes are arranged in sequence along the length direction of the wedge-shaped structure 11, and the spacing between adjacent non-metallized holes is preferably set to 0.6 mm. In the embodiment, there are preferably 6 non-metallized holes, and 2 non-metallized holes are divided into one group, thereby obtaining three groups of non-metallized holes.

[0049] It should be noted that the aperture of each group of non-metallized holes decreases from the proximal end to the distal end of the wedge-shaped structure 11. The purpose is to cause differences in the resonant frequencies at different positions through the gradual change of the aperture, forming multiple adjacent resonant points, which can effectively improve the antenna bandwidth.

[0050] In practice, the apertures of adjacent groups of non-metallized holes preferably decrease in sequence with a difference of 0.1 mm. It should be noted that the length of the wedge-shaped structure 11 in the embodiment is determined based on the impedance matching between the waveguide and the conversion structure of the device.

[0051] like Figure 4 The dimensions of the wedge-shaped structure 11 in this embodiment are shown. The specific dimensions in the figure include L6=6mm, L2=1.2mm, L3=0.1mm, L4=0.4mm, L5=0.6mm, d1=0.4mm, d2=0.3mm, and d3=0.2mm.

[0052] In the embodiment, L6 is the length of the wedge-shaped structure body, L5 is the distance between the center of the non-metallized hole and the edge of the wedge-shaped structure body, L4 is the distance between the first non-metallized hole near the proximal end and the proximal edge of the wedge-shaped structure body, L3 is the distance between the proximal intersection of the two wedge-shaped structure bodies and the top of the wedge-shaped structure body, L2 is the width of the wedge-shaped structure body, d1 is the aperture size of the first group of non-metallized holes, d2 is the aperture size of the second group of non-metallized holes, and d3 is the aperture size of the third group of non-metallized holes.

[0053] In the embodiment, the first dielectric substrate 12 is connected to the wedge-shaped structure 11 , and the number of layers of the first dielectric substrate 12 is equal to the number of layers of the wedge-shaped structure 11 , which can effectively prevent leakage of electromagnetic waves.

[0054] In the embodiment, since the wedge-shaped structure 11 has five layers, the first dielectric substrate 12 is preferably composed of five dielectric plates arranged sequentially from top to bottom. Each dielectric plate layer has a thickness of 0.254 mm and is made of Rogers 5880. Each dielectric plate layer is provided with two rows of semi-metal holes. The semi-metal holes are arranged sequentially along the length of the dielectric plate, extending from one edge of the dielectric plate to the other edge of the dielectric plate. The spacing between adjacent semi-metal holes is the same, the aperture of each semi-metal hole is the same, and the spacing between rows is the same. In the embodiment, the semi-metal holes are not arranged through, and the depth of the semi-metal holes is preferably 0.127 mm. The metal layer is provided on the top and bottom of the first dielectric substrate 12, which can effectively suppress edge radiation and external interference during electromagnetic wave transmission.

[0055] like Figure 4 The figure shows the dimensions of the first dielectric substrate 12 in this embodiment. The specific dimensions in the figure include a=2.2mm, s=0.6mm, and d=0.4mm, where a represents the spacing between two rows of semi-metal holes, s represents the spacing between adjacent semi-metal holes, and d represents the aperture of the semi-metal hole.

[0056] like Figure 3 As shown, in the embodiment, the second dielectric substrate 21 is stepped, and both the top and the bottom of the second dielectric substrate 21 are stepped. The purpose of the step-shaped structure is to improve the transmission performance and prevent electromagnetic wave leakage.

[0057] like Figure 3 As shown, the height of the steps of the second dielectric substrate 21 gradually decreases from left to right in the embodiment. The second dielectric substrate 21 in the figure is divided into five groups according to the step-like shape for illustration, with the rightmost group being the first and the leftmost group being the fifth. The first group consists of a single dielectric plate with a thickness of 0.254 mm, made of Rogers 5880. The second group consists of a dielectric plate with a thickness of 0.254 mm and two dielectric plates with upper and lower side thicknesses of 0.127 mm. The third group consists of three dielectric plates, each with a thickness of 0.254 mm. The fourth group consists of three dielectric plates with a thickness of 0.254 mm and two dielectric plates with upper and lower side thicknesses of 0.127 mm. The fifth group consists of five dielectric plates, each with a thickness of 0.254 mm. Therefore, in this embodiment, the step-like shape on the upper side of the second dielectric substrate 21 and the step-like shape on the lower side of the second dielectric substrate 21 both have a transition difference of 0.127 mm.

[0058] Implementation example Figure 5As shown, the second dielectric substrate 21 controls the impedance matching of the conversion structure by adjusting the distance between the two rows of half-metal holes. Each dielectric plate of the second dielectric substrate 21 is provided with two rows of half-metal holes. The second dielectric substrate 21 is also divided into five groups for illustration, with the rightmost group being the first and the leftmost group being the fifth.

[0059] like Figure 5 As shown in the figure, the spacing between the two columns of semi-metal holes in the first, third, and fifth groups is different. Specifically, the distance between the middle positions of the two columns of semi-metal holes is different, and the distance between the left and right sides of the two columns of semi-metal holes is the same. In the figure, IM1, IM2, and IM3 are used to represent the different distances between the middle positions of the two columns of semi-metal holes. In this embodiment, there are 10 metal holes in each column. When impedance matching needs to be adjusted, it is only necessary to adjust the distance between the 5th and 6th semi-metal holes in the two columns of semi-metal holes. The middle position is determined according to the number of semi-metal holes in each column, and impedance matching is achieved by adjusting the distance between the middle positions of the two columns of semi-metal holes.

[0060] like Figure 5 As shown, the structural parameters of the second dielectric substrate 21 in the embodiment are: a = 2.2 mm, s = 0.6 mm, s1 = 0.55 mm, IM1 = 2 mm, IM2 = 2.4 mm, and IM3 = 2 mm. a represents the spacing between two rows of semi-metallic holes, s represents the spacing between adjacent semi-metallic holes, d represents the diameter of the semi-metallic holes, IM1 represents the distance between two rows of semi-metallic holes on the first set of second dielectric substrates 21, IM2 represents the distance between two rows of semi-metallic holes on the third set of second dielectric substrates 21, and IM3 represents the distance between two rows of semi-metallic holes on the fifth set of second dielectric substrates 21.

[0061] The device is specifically used by being installed between a waveguide and a single-layer substrate integrated waveguide structure. The device can transmit electromagnetic energy from the waveguide to the single-layer substrate integrated waveguide structure. Impedance matching can be adjusted by adjusting the distance between the two rows of semi-metal holes between the wedge-shaped structure 11 and the second dielectric substrate 21.

[0062] The technical effects of the present invention are described below in conjunction with simulation experiments.

[0063] 1. Simulation conditions and contents:

[0064] The simulation software uses HFSS19.0, and the simulation working frequency is set to 77GHz. The reflection coefficient and insertion loss of the present invention are simulated, and the results are as follows: Figure 6 shown.

[0065] 2. Analysis of simulation results:

[0066] Reference Figure 6In the frequency band of 76 GHz to 81 GHz, the S11 (reflection coefficient) of the conversion structure of the present device is less than 10 dB, while the S21 (insertion loss) is about 0.95 dB, which is less than 1 dB. This shows that the conversion structure designed by the present invention has good transmission performance.

[0067] It is shown that the waveguide to single-layer substrate integrated waveguide conversion structure involved in the present invention has good performance, which enables it to meet the performance measurement requirements of related microwave devices such as automotive radar antennas.

[0068] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It is obvious to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, from all points of view, the embodiments should be regarded as illustrative and non-restrictive. The scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes that fall within the meaning and range of equivalents of the claims are included in the present invention. Any reference signs in the claims should not be construed as limiting the claim to which they relate.

[0069] In addition, it should be understood that although this specification describes the embodiments, not every embodiment contains only one independent technical solution. This description is for clarity only. Those skilled in the art should consider the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art. The above content is only for the purpose of illustrating the technical concept of the present invention and cannot be used to limit the scope of protection of the present invention. Any changes made based on the technical solution in accordance with the technical concept proposed by the present invention fall within the scope of protection of the claims of the present invention.

Claims

1. A waveguide to single-layer substrate integrated waveguide structure conversion structure, characterized in that: It comprises a first connecting structure (1) and a second connecting structure (2) connected to each other; The first connection structure (1) comprises a connected wedge-shaped structure (11) and a first dielectric substrate (12), wherein the wedge-shaped structure (11) comprises a pair of symmetrical wedge-shaped structure bodies whose width gradually narrows from the proximal end to the distal end, and the wedge-shaped structure body is composed of a plurality of substrates arranged sequentially from top to bottom, wherein each layer of the substrate is provided with non-metallized holes; the non-metallized holes are evenly arranged along the length direction of the wedge-shaped structure (11), wherein the spacing between adjacent non-metallized holes is 0.6 mm, and the non-metallized holes are divided into multiple groups, and the aperture of each group of non-metallized holes gradually decreases by a difference of 0.1 mm along the direction from the proximal end to the distal end of the wedge-shaped structure (11) body; The second connecting structure (2) comprises a second dielectric substrate (21), and the first dielectric substrate (12) and the second dielectric substrate (21) are both provided with semi-metallic holes, wherein the second dielectric substrate (21) is a stepped structure, and the stepped structure gradually decreases along a first direction, and the first direction is a direction from an end of the second connecting structure (2) close to the first connecting structure (1) to an end of the second connecting structure (2) away from the first connecting structure (1); The semi-metal holes are arranged in two rows, and the semi-metal holes are not arranged through; the spacing between adjacent semi-metal holes is the same, and the second dielectric substrate (21) adjusts the impedance matching by adjusting the middle distance between the two rows of semi-metal holes.

2. The waveguide to single-layer substrate integrated waveguide structure conversion structure according to claim 1, characterized in that: The proximal end of the wedge-shaped structure (11) is connected to the first dielectric substrate (12), and the distal end is connected to the waveguide; The number of substrate layers of the wedge-shaped structure (11) is equal to the number of layers of the first dielectric substrate (12).

3. The waveguide to single-layer substrate integrated waveguide structure conversion structure according to claim 1, characterized in that: The top layer and the bottom layer of the first dielectric substrate (12) and the second dielectric substrate (21) are both metal layers.

4. The waveguide to single-layer substrate integrated waveguide structure conversion structure according to claim 1, characterized in that: The upper and lower side surfaces of the second dielectric substrate (21) are both symmetrical stepped structures.

5. The waveguide to single-layer substrate integrated waveguide structure conversion structure according to claim 4, characterized in that: The thickness of the stepped structure decreases in sequence with a difference of 0.127 mm.

6. An electronic device, characterized in that: A conversion structure comprising a waveguide to a single-layer substrate integrated waveguide structure as claimed in any one of claims 1 to 5.

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