Circuit topology and control method of half-bridge converter based on mixing of full-control device and thyristor
Through the half-bridge converter topology and auxiliary shutdown unit that mixes the full control device with the thyristor, the problem of unbalanced parallel devices and long shutdown time in high-voltage and high-power applications is solved, and the effect of rapid shutdown and cost reduction is achieved.
Patent Information
- Application Number
- CN202510722626.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-30
- Publication Date
- 2025-07-08
AI Technical Summary
Traditional half-bridge converters based on controllable devices have problems such as uneven parallel device, high cost and high operating risk in high voltage and high power applications. The semi-controlled thyristor device cannot be turned off actively, resulting in a long shutdown time and a risk of electrical arcing.
The half-bridge converter topology is adopted that combines the full control device with the thyristor, combined with the auxiliary shutdown unit, and the active shutdown of the main power unit thyristor is achieved through pulse width modulation strategy and coupling inductor. The full control device is used to output a short-time square wave pulse voltage to induce the reverse voltage in the coupled inductor, achieving rapid shutdown.
The rapid shutdown of the main power unit thyristor is achieved, avoiding electrical arcing, reducing system costs and improving device service life and current distribution balance.
Smart Images
Figure CN120281197A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of high-power power electronic converters, and particularly relates to a circuit topology and a control method of a half-bridge converter based on a hybrid of fully-controlled devices and thyristors. Background Art
[0002] With the rapid development of fields such as renewable energy power generation, high-voltage direct current power transmission, electric vehicles, and industrial electrification, the demand for high-efficiency and high-reliability high-power power conversion is becoming increasingly prominent. As the basic unit of a multilevel topology, the half-bridge power electronic converter shows important potential in medium-voltage and high-power application scenarios due to its advantages such as simple structure, flexible control, and easy modular expansion. However, in the face of application requirements of megawatt-level power ratings and voltage platforms above kilovolts, traditional half-bridge converters based on controllable devices (such as silicon-based IGBTs and silicon carbide SiCs) still face severe challenges in terms of current-carrying capacity and system cost. In high-voltage and high-power application scenarios, multiple devices need to be connected in parallel, resulting in high system costs and uneven current distribution among multiple devices, with high operation risks. The half-bridge converter using semi-controlled thyristor devices has the ability to carry high voltage and large current. However, this device cannot be actively turned off and relies on an external mechanical switch of the converter or the grid voltage to decay the current flowing into the device to the holding current before turning off. The turn-off time is long and there is an electric arc when the mechanical switch is disconnected, which is likely to affect the service life of the switch. Summary of the Invention
[0003] To solve the above technical problems, the present invention adopts the following technical solutions:
[0004] A circuit topology of a half-bridge converter based on a hybrid of fully-controlled devices and thyristors, comprising: a main power unit based on thyristors and an auxiliary turn-off unit based on fully-controlled devices;
[0005] The main power unit includes: a thyristor S1, a first winding L1 of a three-coupled inductor, a second winding L2 of the three-coupled inductor, and a thyristor S2 connected in series in sequence, a diode D1 and a diode D2 connected in series, and a capacitor C1 and a capacitor C2 connected in series. The above three series circuits are all connected in parallel across the support capacitor Cdc;
[0006] The auxiliary turn-off unit is set as a half-bridge fully-controlled device auxiliary turn-off unit or a full-bridge fully-controlled device auxiliary turn-off unit;
[0007] The half-bridge fully-controlled device auxiliary turn-off unit includes a half-bridge composed of an insulated gate bipolar transistor S3 and a diode D3 connected in series, and a third winding L3 of the three-coupled inductor connected in parallel with the diode D3; the half-bridge is connected in parallel across the support capacitor Cdc;
[0008] The full-bridge type fully-controlled device auxiliary turn-off unit includes a half-bridge formed by connecting an insulated gate bipolar transistor S13 and a diode D13 in series, and another half-bridge formed by connecting an insulated gate bipolar transistor S14 and a diode D14 in series; the two half-bridges are respectively connected in parallel to the support capacitor Cdc; the third winding L3 of the three-coupled inductor is connected to the emitter of S13 and the collector of S14.
[0009] A control method for a half-bridge converter based on a hybrid of fully-controlled devices and thyristors, which is used for the circuit topology of the half-bridge converter based on a hybrid of fully-controlled devices and thyristors, includes:
[0010] During system operation, the thyristors S1 and S2 in the main power unit operate using a pulse width modulation strategy, and the thyristors S1 and S2 are not turned on simultaneously; the half-bridge type fully-controlled device auxiliary turn-off unit or the full-bridge type fully-controlled device auxiliary turn-off unit is started when the circuit needs to be blocked;
[0011] Send a half-bridge converter blocking instruction to the half-bridge type fully-controlled device auxiliary turn-off unit or the full-bridge type fully-controlled device auxiliary turn-off unit. After receiving the half-bridge converter blocking instruction, through the conduction of the fully-controlled devices in the half-bridge type fully-controlled device auxiliary turn-off unit or the full-bridge type fully-controlled device auxiliary turn-off unit, the main power unit is blocked at any time.
[0012] The present invention has the following beneficial effects: Compared with the existing thyristor half-bridge converter, the present invention integrates a fully-controlled device auxiliary turn-off unit inside the converter, uses the fully-controlled devices of the auxiliary turn-off unit and the thyristor devices of the main power unit in combination, and controls the fully-controlled devices of the auxiliary turn-off unit to output a short-time square wave pulse voltage. The pulse voltage is coupled to the thyristor circuit of the main power unit and induces a reverse voltage in the coupled inductor winding, realizing the active turn-off of all thyristors in the main power unit, with a short turn-off time. At the same time, due to the current limiting of the coupled inductor, there is no electric arc pull during the turn-off process. Description of the Drawings
[0013] Figure 1(a) is a circuit topology diagram of the half-bridge converter based on a hybrid of half-bridge type fully-controlled devices and thyristors of the present invention;
[0014] Figure 1(b) is a circuit topology diagram of the half-bridge converter based on a hybrid of full-bridge type fully-controlled devices and thyristors of the present invention. Detailed Embodiments
[0015] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.
[0016] The present invention provides a circuit topology of a half - bridge converter based on a hybrid of fully - controlled devices and thyristors, including a main power unit based on thyristors and an auxiliary turn - off unit based on fully - controlled devices. Two thyristors S1 and S2 in the main power unit conduct complementarily. The auxiliary turn - off unit is only activated when the circuit needs to be blocked. When the blocking signal is triggered, the thyristors S1 and S2 in the main power unit are reverse - biased and turned off.
[0017] The present invention provides a circuit topology of a half - bridge converter based on a hybrid of fully - controlled devices and thyristors, including a main power unit based on thyristors and an auxiliary turn - off unit based on fully - controlled devices. The auxiliary turn - off unit can be set as a half - bridge type fully - controlled device auxiliary turn - off unit or a full - bridge type fully - controlled device auxiliary turn - off unit. The main power unit includes: thyristors S1, the first winding L1 of a three - coupled inductor, the second winding L2 of the three - coupled inductor, and thyristor S2 connected in series in sequence, diodes D1 and D2 connected in series, and capacitors C1 and C2 connected in series. The aforementioned three series circuits are all connected in parallel across both ends of the support capacitor Cdc.
[0018] The auxiliary turn - off unit is set as a half - bridge type fully - controlled device auxiliary turn - off unit or a full - bridge type fully - controlled device auxiliary turn - off unit.
[0019] The half - bridge type fully - controlled device auxiliary turn - off unit includes a half - bridge formed by connecting an insulated gate bipolar transistor S3 and a diode D3 in series, and the third winding L3 of the three - coupled inductor connected in parallel across the diode D3; the half - bridge is connected in parallel across the support capacitor Cdc.
[0020] The full - bridge type fully - controlled device auxiliary turn - off unit includes a half - bridge formed by connecting an insulated gate bipolar transistor S13 and a diode D13 in series, and another half - bridge formed by connecting an insulated gate bipolar transistor S14 and a diode D14 in series; the two half - bridges are respectively connected in parallel across the support capacitor Cdc; the third winding L3 of the three - coupled inductor is connected to the emitter of S13 and the collector of S14.
[0021] As shown in Figure 1(a), its auxiliary turn - off unit is set as a half - bridge type fully - controlled device auxiliary turn - off unit. The half - bridge type fully - controlled device auxiliary turn - off unit consists of an insulated gate bipolar transistor S3, a diode D3, and the third winding L3 of the three - coupled inductor. The three - coupled inductor consists of the first winding L1, the second winding L2, and the third winding L3. The inductance value of the third winding L3 is k times the inductance of the first winding L1 and the second winding L2. The value range of k is [1, 100]. The coupling coefficient between the first winding L1 and the second winding L2 ranges from [0.8, 1]. The coupling coefficient between the first winding L1 and the third winding L3 ranges from [0.8, 1]. The coupling coefficient between the second winding L2 and the third winding L3 ranges from [0.8, 1].
[0022] The collector of the insulated gate bipolar transistor S3 is connected to the positive electrode of the support capacitor Cdc, and the emitter is connected to the corresponding terminal of the third winding L3; the anode of the diode D3 is connected to the non-corresponding terminal of the third winding L3 of the three-coupled inductor, and the cathode is connected to the corresponding terminal of the third winding L3 of the three-coupled inductor; the non-corresponding terminal of the third winding L3 of the three-coupled inductor, the anode of the diode D3 are connected to the negative electrode of the support capacitor Cdc.
[0023] As shown in Fig. 1(b), its auxiliary turn-off unit is set as a full-bridge fully-controlled device auxiliary turn-off unit. The full-bridge fully-controlled device auxiliary turn-off unit consists of a first insulated gate bipolar transistor S13, a second insulated gate bipolar transistor S14, diodes D13, D14 and the third winding L3 of the three-coupled inductor. The insulated gate bipolar transistor S13 and the diode D13 form a half-bridge, and the insulated gate bipolar transistor S14 and the diode D14 form another half-bridge. The emitter of the insulated gate bipolar transistor S13 is connected to the cathode of the diode D13, the collector is connected to the positive electrode of the support capacitor Cdc, and the anode of the diode D13 is connected to the negative electrode of the support capacitor Cdc; the collector of the insulated gate bipolar transistor S14 is connected to the anode of the diode D14, the emitter is connected to the negative electrode of the support capacitor Cdc; the cathode of the diode D14 is connected to the positive electrode of the support capacitor Cdc; the corresponding terminal of the third winding L13 of the three-coupled inductor is connected to the emitter of the insulated gate bipolar transistor S13, and the non-corresponding terminal is connected to the collector of the insulated gate bipolar transistor S14. For the fully-controlled devices in the auxiliary turn-off circuit, in addition to the insulated gate bipolar transistor, other fully-controlled devices can also be used, such as gate turn-off thyristors, metal oxide semiconductor field effect transistors, integrated gate-commutated thyristors, etc.
[0024] As shown in Fig. 1(a) and Fig. 1(b), the main power unit consists of a support capacitor Cdc, a first winding L1 of a three-coupled inductor, a second winding L2 of the three-coupled inductor, a thyristor S1, a thyristor S2, a diode D1, a diode D2, a capacitor C1, and a capacitor C2. The cathode of the thyristor S1 is connected to the same-name end of the first winding L1 of the three-coupled inductor, the non-same-name end of the first winding L1 of the three-coupled inductor is connected to the same-name end of the second winding L2 of the three-coupled inductor, the non-same-name end of the second winding L2 of the three-coupled inductor is connected to the anode of the thyristor S2, the cathode of the thyristor S2 is connected to the negative electrode of the capacitor C2, and the anode of the thyristor S1 is connected to the positive electrode of the capacitor C1. The anode of the diode D1 is connected to the non-same-name end of the first winding L1 of the three-coupled inductor, and the cathode is connected to the positive electrode of the support capacitor Cdc; the cathode of the diode D2 is connected to the non-same-name end of the first winding L1 of the three-coupled inductor, and the anode of the diode D2 is connected to the negative electrode of the support capacitor Cdc. The negative electrode of the capacitor C1 is connected to the non-same-name end of the first winding L1 of the three-coupled inductor, and the positive electrode of the capacitor C1 is connected to the positive electrode of the support capacitor Cdc; the positive electrode of the capacitor C2 is connected to the non-same-name end of the first winding L1 of the three-coupled inductor, and the negative electrode of the capacitor C2 is connected to the negative electrode of the support capacitor Cdc.
[0025] The control method of the half-bridge converter based on the hybrid of fully-controlled devices and thyristors includes:
[0026] During system operation, the thyristors S1 and S2 in the main power unit operate using a pulse width modulation strategy. The thyristors S1 and S2 do not conduct simultaneously. When the thyristor S1 conducts, the thyristor S2 is turned off; when the thyristor S2 conducts, the thyristor S1 is turned off. The operating frequency range of the thyristors S1 and S2 is 0 - 2 kHz.
[0027] For the half-bridge fully-controlled device auxiliary turn-off unit, the specific control method for achieving the locking of the main power unit at any time is as follows:
[0028] During system operation, the insulated gate bipolar transistor S3 in the auxiliary turn-off unit is in a non-conducting state. When a given half-bridge converter locking instruction is received, the auxiliary turn-off unit outputs a square-wave voltage with a pulse width of Ts, where the value range of Ts is [0, 10 μs], and the insulated gate bipolar transistor S3 in the auxiliary turn-off unit is turned on. The currents flowing into the first winding L1 of the three-coupled inductor and the second winding L2 of the three-coupled inductor in the main power unit are subjected to a reverse voltage and decrease. When the current decays to zero, the thyristors S1 and S2 are turned off.
[0029] For the full-bridge fully-controlled device auxiliary turn-off unit, the specific control method for achieving the locking of the main power unit at any time is as follows:
[0030] During system operation, the insulated gate bipolar transistors S13 and S14 in the auxiliary turn-off unit are in the non-conducting state. When a given half-bridge converter blocking instruction is received, the auxiliary turn-off unit outputs a square-wave voltage with a pulse width of Ds, where the value range of Ds is [0, 10 μs], turning on the insulated gate bipolar transistors S13 and S14. The currents flowing into the first winding L1 of the triple-coupled inductor and the second winding L2 of the triple-coupled inductor in the main power unit are subjected to a reverse voltage and decrease. When the current decays to zero, the thyristors S1 and S2 turn off.
[0031] The above are only embodiments of the present invention, and do not limit the patent scope of the present invention. Any equivalent structural or equivalent process transformations made by using the content of the specification and drawings of the present invention, or directly or indirectly applied in other related system fields, are equally included in the protection scope of the present invention.
[0032] The content not detailedly described in the specification of the present invention belongs to the prior art well-known to those skilled in the art.
Claims
1. A circuit topology of a half-bridge converter based on a hybrid of fully controlled devices and thyristors, characterized in that, Comprising: A main power unit based on thyristors and an auxiliary turn-off unit based on fully-controlled devices; The main power unit includes: a thyristor S1, a first winding L1 of a three-coupled inductor, a second winding L2 of the three-coupled inductor, and a thyristor S2 connected in series in sequence, diodes D1 and D2 connected in series, and capacitors C1 and C2 connected in series. The above three series circuits are all connected in parallel across both ends of the support capacitor Cdc; The auxiliary turn-off unit is set as a half-bridge type fully-controlled device auxiliary turn-off unit or a full-bridge type fully-controlled device auxiliary turn-off unit; The half-bridge type fully-controlled device auxiliary turn-off unit includes a half-bridge formed by connecting an insulated gate bipolar transistor S3 and a diode D3 in series, and a third winding L3 of the three-coupled inductor connected in parallel to the diode D3; the half-bridge is connected in parallel across the support capacitor Cdc; The full-bridge type fully-controlled device auxiliary turn-off unit includes a half-bridge formed by connecting an insulated gate bipolar transistor S13 and a diode D13 in series, and another half-bridge formed by connecting an insulated gate bipolar transistor S14 and a diode D14 in series; the two half-bridges are respectively connected in parallel across the support capacitor Cdc; the third winding L3 of the three-coupled inductor is connected to the emitter of S13 and the collector of S14.
2. The circuit topology of the half-bridge converter based on the hybrid of fully-controlled devices and thyristors according to claim 1, characterized in that, The described main power unit includes a support capacitor Cdc, a first winding L1 of a three-coupled inductor, a second winding L2 of the three-coupled inductor, a thyristor S1, a thyristor S2, diodes D1, D2, capacitors C1 and C2; the cathode of the thyristor S1 is connected to the same-named end of the first winding L1 of the three-coupled inductor, the non-same-named end of the first winding L1 of the three-coupled inductor is connected to the same-named end of the second winding L2 of the three-coupled inductor, the non-same-named end of the second winding L2 of the three-coupled inductor is connected to the anode of the thyristor S2, the cathode of the thyristor S2 is connected to the negative pole of the capacitor C2, the anode of the thyristor S1 is connected to the positive pole of the capacitor C1; the anode of the diode D1 is connected to the non-same-named end of the first winding L1 of the three-coupled inductor, and the cathode is connected to the positive pole of the support capacitor Cdc; the cathode of the diode D2 is connected to the non-same-named end of the first winding L1 of the three-coupled inductor, and the anode of the diode D2 is connected to the negative pole of the support capacitor Cdc; the negative pole of the capacitor C1 is connected to the non-same-named end of the first winding L1 of the three-coupled inductor, and the positive pole of the capacitor C1 is connected to the positive pole of the support capacitor Cdc; the positive pole of the capacitor C2 is connected to the non-same-named end of the first winding L1 of the three-coupled inductor, and the negative pole of the capacitor C2 is connected to the negative pole of the support capacitor Cdc.
3. The circuit topology of the half-bridge converter based on the hybrid of fully controlled devices and thyristors according to claim 1, characterized in that, The described three-coupled inductor is composed of a first winding L1, a second winding L2, and a third winding L3. The inductance value of the third winding L3 is k times the inductance of the first winding L1 and the second winding L2, and the value range of k is [1, 100].
4. The circuit topology of the half-bridge converter based on the hybrid of fully controlled devices and thyristors according to claim 1, characterized in that, The described half - bridge fully - controlled device auxiliary turn - off unit includes: an insulated - gate bipolar transistor S3, a diode D3, and the third winding L3 of a three - coupled inductor; the collector of the insulated - gate bipolar transistor S3 is connected to the positive electrode of the support capacitor Cdc, and the emitter is connected to the homonymous end of the third winding L3; the anode of the diode D3 is connected to the non - homonymous end of the third winding L3 of the three - coupled inductor, and the cathode is connected to the homonymous end of the third winding L3 of the three - coupled inductor; the non - homonymous end of the third winding L3 of the three - coupled inductor, the anode of the diode D3 are connected to the negative electrode of the support capacitor Cdc.
5. The circuit topology of the half-bridge converter based on the hybrid of fully controlled devices and thyristors according to claim 1, wherein The described full - bridge fully - controlled device auxiliary turn - off unit consists of a first insulated - gate bipolar transistor S13, a second insulated - gate bipolar transistor S14, a diode D13, a diode D14, and the third winding L3 of a three - coupled inductor; the insulated - gate bipolar transistor S13 and the diode D13 form a half - bridge, and the insulated - gate bipolar transistor S14 and the diode D14 form another half - bridge; the emitter of the insulated - gate bipolar transistor S13 is connected to the cathode of the diode D13, the collector is connected to the positive electrode of the support capacitor Cdc, and the anode of the diode D13 is connected to the negative electrode of the support capacitor Cdc; the collector of the insulated - gate bipolar transistor S14 is connected to the anode of the diode D14, the emitter is connected to the negative electrode of the support capacitor Cdc; the cathode of the diode D14 is connected to the positive electrode of the support capacitor Cdc; the homonymous end of the third winding L13 of the three - coupled inductor is connected to the emitter of the insulated - gate bipolar transistor S13, and the non - homonymous end is connected to the collector of the insulated - gate bipolar transistor S14.
6. The circuit topology of the half-bridge converter based on the hybrid of fully-controlled devices and thyristors according to claim 1, characterized in that, Replace the insulated - gate bipolar transistor S3 with a gate - turn - off thyristor, a metal - oxide - semiconductor field - effect transistor, an integrated - gate - commutated thyristor, or other types of fully - controlled devices.
7. The circuit topology of the half-bridge converter based on the hybrid of fully controlled devices and thyristors according to claim 1, characterized in that, Replace the insulated - gate bipolar transistor S13 and the insulated - gate bipolar transistor S14 with a gate - turn - off thyristor, a metal - oxide - semiconductor field - effect transistor, an integrated - gate - commutated thyristor, or other types of fully - controlled devices.
8. The circuit topology of the half-bridge converter based on the hybrid of fully-controlled devices and thyristors according to claim 1, characterized in that, The coupling coefficient between the first winding L1 and the second winding L2 ranges from [0.8, 1], the coupling coefficient between the first winding L1 and the third winding L3 ranges from [0.8, 1], and the coupling coefficient between the second winding L2 and the third winding L3 ranges from [0.8, 1].
9. A control method for a half-bridge converter based on a hybrid of fully-controlled devices and thyristors, which is used for the circuit topology of the half-bridge converter based on a hybrid of fully-controlled devices and thyristors according to any one of claims 1 to 8, characterized in that, Including: During system operation, the thyristors S1 and S2 in the main power unit operate using a pulse - width modulation strategy, and the thyristors S1 and S2 do not conduct simultaneously; the half - bridge fully - controlled device auxiliary turn - off unit or the full - bridge fully - controlled device auxiliary turn - off unit is activated when the circuit needs to be blocked. Send a half - bridge converter blocking instruction to the half - bridge fully - controlled device auxiliary turn - off unit or the full - bridge fully - controlled device auxiliary turn - off unit. After receiving the half - bridge converter blocking instruction, through the conduction of the fully - controlled devices in the half - bridge fully - controlled device auxiliary turn - off unit or the full - bridge fully - controlled device auxiliary turn - off unit, the main power unit is blocked at any time.
10. The control method of the half-bridge converter based on the hybrid of fully-controlled devices and thyristors according to claim 9, wherein: For the half-bridge fully-controlled device auxiliary turn-off unit, the operation of locking the main power unit at any time is as follows: during system operation, the insulated gate bipolar transistor S3 in the auxiliary turn-off unit is in the non-conducting state; when receiving the locking instruction of the half-bridge converter given by the system, the insulated gate bipolar transistor S3 conducts; the currents flowing into the first winding L1 of the triple-coupled inductor and the second winding L2 of the triple-coupled inductor in the main power unit are subject to reverse voltage and decrease. When the current decays to zero, the thyristors S1 and S2 turn off. For the full-bridge fully-controlled device auxiliary turn-off unit, the operation of locking the main power unit at any time is as follows: during system operation, the insulated gate bipolar transistors S13 and S14 in the auxiliary turn-off unit are in the non-conducting state; when receiving the locking instruction of the half-bridge converter given by the system, the insulated gate bipolar transistors S13 and S14 conduct; the currents flowing into the first winding L1 of the triple-coupled inductor and the second winding L2 of the triple-coupled inductor in the main power unit are subject to reverse voltage and decrease. When the current decays to zero, the thyristors S1 and S2 turn off.
11. The control method of the half-bridge converter based on the hybrid of fully controlled devices and thyristors according to claim 10, characterized in that, For the half-bridge fully-controlled device auxiliary turn-off unit, when receiving the given locking instruction of the half-bridge converter, the auxiliary turn-off unit outputs a square-wave voltage with a pulse width of Ts, where the value range of Ts is [0, 10 μs], and the insulated gate bipolar transistor S3 in the auxiliary turn-off unit is conducted; for the full-bridge fully-controlled device auxiliary turn-off unit, when receiving the given locking instruction of the half-bridge converter, the auxiliary turn-off unit outputs a square-wave voltage with a pulse width of Ds, where the value range of Ds is [0, 10 μs], and the insulated gate bipolar transistors S13 and S14 are conducted; the operating frequency range of the thyristors S1 and S2 in the main power unit is 0 - 2 kHz.