Preparation method of high-temperature solar-blind ultraviolet photoelectric detector with embedded precious metal nanoparticles and single crystal diamond nanowires

Abstract

The invention relates to the field of diamond processing and preparation and photoelectric devices, in particular to a preparation method of a high-temperature solar-blind ultraviolet photoelectric detector with embedded precious metal nanoparticles and single crystal diamond nanowires. The method comprises the following steps: depositing a noble metal film on the surface of a single crystal diamond nanowire, carrying out annealing treatment in microwave plasma chemical vapor deposition equipment to enable the noble metal film to be thermally dehumidified to form nanoparticles, and then carrying out homoepitaxial growth of the single crystal diamond nanowire to enable the noble metal nanoparticles to be embedded into the diamond nanowire. The responsivity of the prepared high-temperature solar-blind ultraviolet photoelectric detector to 220nm deep ultraviolet light at room temperature is improved by three orders of magnitude compared with that of a block oxygen terminal diamond. The responsivity at the high temperature of 275 DEG C reaches gt; the light response performance and the high-temperature stability are excellent. The detector is suitable for deep ultraviolet light detection in extreme environments such as aerospace, industrial monitoring and military affairs.

Description

Technical Field

[0001] The present invention relates to the fields of diamond processing and optoelectronic devices, and specifically to a method for preparing a high-temperature solar-blind ultraviolet photodetector based on single-crystal diamond nanowires embedded with noble metal nanoparticles. Background Art

[0002] Solar-blind ultraviolet light (wavelength < 280 nm) detectors have important applications in both military and civilian fields such as aerospace, industrial monitoring, environmental monitoring, and chemical analysis. With the development of technology, solar-blind ultraviolet photodetectors have been developed and applied in more and more complex scenarios, including service environments such as high temperature and high radiation. Traditional silicon-based photodetectors show a significant decline in performance under high-temperature conditions, which limits their application in extreme conditions. Diamond, a semiconductor material with an ultra-wide bandgap (Eg = 5.47 eV), high thermal conductivity, and the highest radiation resistance among many materials, has become an ideal material for solar-blind ultraviolet photodetectors serving in harsh conditions.

[0003] The electrical properties of diamond are significantly affected by surface termination. The electrical performance of hydrogen-terminated diamond deteriorates significantly in high-temperature environments, while oxygen-terminated diamond has excellent thermal stability and chemical inertness and maintains stable properties in harsh conditions. However, there are usually a large number of deep-level traps on the surface of oxygen-terminated diamond, resulting in a high carrier recombination efficiency and a low responsivity. To solve this problem, researchers have tried to optimize by adjusting the electrode structure and introducing noble metal nanoparticles, etc., but these methods still have certain limitations in terms of responsivity and spectral selectivity. Therefore, there is an urgent need to develop new methods to significantly improve the performance of oxygen-terminated diamond photodetectors, especially under high-temperature conditions. Summary of the Invention

[0004] The purpose of the present invention is to provide a method for preparing a high-temperature solar-blind ultraviolet photodetector based on single-crystal diamond nanowires embedded with noble metal nanoparticles, overcoming the limitations in the prior art, realizing an efficient deep-ultraviolet photodetector, and being able to work stably under high-temperature conditions. The ultraviolet photodetector based on the single-crystal diamond nanowires has a significantly improved photoresponsivity and is particularly suitable for deep-ultraviolet light detection in extreme environments.

[0005] The technical solution of the present invention is as follows:

[0006] A preparation method of a high-temperature solar-blind ultraviolet photodetector based on single-crystalline diamond nanowires embedded with noble metal nanoparticles. First, the single-crystalline diamond nanowires are transferred to the surface of a substrate insulated by Si / SiO2 through spin coating. Then, a noble metal thin film is deposited on the diamond surface by an electron beam evaporation device. Next, using a microwave plasma chemical vapor deposition device, the noble metal thin film is dehumidified and aggregated to form nanoparticles. Continuing in the microwave plasma chemical vapor deposition device, homoepitaxial growth of the single-crystalline diamond nanowires occurs, coating the noble metal nanoparticles. Finally, electrodes are fabricated at both ends of the single-crystalline diamond nanowires through a standard photolithography process to form the device.

[0007] The preparation method of the high-temperature solar-blind ultraviolet photodetector based on single-crystalline diamond nanowires embedded with noble metal nanoparticles, which includes the following steps:

[0008] a. Transfer of single-crystalline diamond nanowires: The prepared single-crystalline diamond nanowires are dispersed in an isopropanol solution and ultrasonicated for 30 s to 2 min to form a suspension of single-crystalline diamond nanowires. Take 1 to 2 drops of the suspension and drop them on the surface of the Si / SiO2 substrate. Using a spin coater, spin dry the suspension at a rotation speed of 300 to 1200 rad / min, and the single-crystalline diamond nanowires are evenly dispersed on the surface of the Si / SiO2 substrate.

[0009] b. Deposition of noble metal thin film: Place the Si / SiO2 substrate containing single-crystalline diamond nanowires in step a in an electron beam evaporation device, and deposit a noble metal thin film with a thickness of 2 to 4 nm on the surface of the single-crystalline diamond nanowires.

[0010] c. Homoepitaxial growth of single-crystalline diamond nanowires: Place the single-crystalline diamond nanowires deposited with noble metal thin film in step b in a 915 MHz microwave plasma chemical vapor deposition device. The flow rate of hydrogen is 350 to 450 sccm, and the microwave power and working pressure are set to 5 to 8 kW and 40 to 60 mbar. Annealing treatment is carried out in a pure hydrogen plasma atmosphere to heat the noble metal thin film to dehumidify and form uniformly distributed noble metal nanoparticles. Continuing in the microwave plasma chemical vapor deposition device, homoepitaxial growth of the single-crystalline diamond nanowires occurs. The flow rates of hydrogen and methane are 350 to 450 sccm and 2 to 6 sccm respectively, and the microwave power and working pressure are set to 5 to 8 kW and 40 to 60 mbar to coat the noble metal nanoparticles with the grown single-crystalline diamond epitaxial layer, forming single-crystalline diamond nanowires embedded with noble metal nanoparticles.

[0011] d. Preparation of solar-blind ultraviolet photodetector: Through standard lithography process, metal electrodes with a spacing of 5 - 12 μm and a thickness of 100 - 150 nm are deposited at both ends of the single-crystal diamond nanowire. Then the device is placed in a tube furnace, and a protective gas atmosphere is introduced and processed at 500 - 700 °C for 10 - 30 min to form an ohmic contact between the metal electrode and the single-crystal diamond nanowire. Then the device is processed by an oxygen plasma cleaning device for 10 - 20 min to form a stable oxygen termination on the surface of the single-crystal diamond nanowire.

[0012] In the preparation method of the high-temperature solar-blind ultraviolet photodetector with embedded noble metal nanoparticles in single-crystal diamond nanowires, in step b, a noble metal thin film is deposited on the surface of the single-crystal diamond nanowire, and the selected noble metal is platinum or palladium.

[0013] In the preparation method of the high-temperature solar-blind ultraviolet photodetector with embedded noble metal nanoparticles in single-crystal diamond nanowires, in step c, when the noble metal thin film is dehumidified, the treatment temperature is 600 - 800 °C, the treatment time is 10 - 20 min, and the size of the formed noble metal nanoparticles is between 5 - 50 nm.

[0014] In the preparation method of the high-temperature solar-blind ultraviolet photodetector with embedded noble metal nanoparticles in single-crystal diamond nanowires, in step c, the temperature of homoepitaxial growth of the single-crystal diamond nanowire is 700 - 850 °C, and the growth time is 20 - 60 min.

[0015] In the preparation method of the high-temperature solar-blind ultraviolet photodetector with embedded noble metal nanoparticles in single-crystal diamond nanowires, in the microwave plasma chemical vapor deposition equipment, the dehumidification of noble metal nanoparticles and the homoepitaxial growth of single-crystal diamond nanowires are continuously realized.

[0016] In the preparation method of the high-temperature solar-blind ultraviolet photodetector with embedded noble metal nanoparticles in single-crystal diamond nanowires, in step d, the protective gas atmosphere is an Ar / H2 mixed gas or pure Ar gas.

[0017] In the preparation method of the high-temperature solar-blind ultraviolet photodetector with embedded noble metal nanoparticles in single-crystal diamond nanowires, in step d, the metal electrode materials are titanium, gold, and platinum, respectively, to form a multi-layer structure electrode of titanium / gold or titanium / platinum / gold.

[0018] The high-temperature solar-blind ultraviolet photodetector prepared by the preparation method of the high-temperature solar-blind ultraviolet photodetector with embedded noble metal nanoparticles in single-crystal diamond nanowires includes: single-crystal diamond nanowires embedded with platinum nanoparticles and metal electrodes. Two metal electrodes are deposited in parallel at both ends of the single-crystal diamond nanowires embedded with platinum nanoparticles. The metal electrodes form a carbide interface layer through annealing in a protective gas atmosphere to achieve ohmic contact with the single-crystal diamond nanowires.

[0019] The preparation method of the described single-crystal diamond nanowire high-temperature solar-blind ultraviolet photodetector embedded with noble metal nanoparticles uses a bulk single-crystal diamond substrate instead of single-crystal diamond nanowires.

[0020] The design concept of the present invention is as follows:

[0021] The present invention mainly aims at the problem that although oxygen-terminated diamond has high stability when applied to solar-blind deep ultraviolet photodetection, its responsivity is relatively low. By embedding noble metal nanoparticles in oxygen-terminated single-crystal diamond nanowires, using the one-dimensional carrier directional transport channel brought by the nanowires, the local surface plasmon resonance (LSPR) effect of noble metal nanoparticles, and the carrier separation mechanism of local Schottky junctions, the light absorption, carrier separation, and transport efficiency are improved, thereby realizing the preparation of a solar-blind ultraviolet photodetector with high responsivity that can work at high temperatures.

[0022] Compared with the existing technologies, the advantages and beneficial effects of the present invention are mainly reflected in:

[0023] (1) The preparation of the material is simple and can achieve a large amount of preparation at one time. The present invention can simultaneously perform noble metal thin film deposition, dehumidification, and diamond homoepitaxial growth on a large number of diamond nanowires, with the characteristics of high efficiency, and obtain a large number of single-crystal diamond nanowires embedded with noble metal nanoparticles.

[0024] (2) The size of the device is small. The solar-blind ultraviolet detector prepared by the present invention is based on single-crystal diamond nanowires, with the characteristics of small size and convenient integration with other systems.

[0025] (3) The device prepared by the present invention combines multiple performance enhancement mechanisms, achieving a significant improvement in the optical responsivity, combining the one-dimensional carrier directional transport channel, the LSPR effect of noble metal nanoparticles, and the carrier separation mechanism of local Schottky junctions. The responsivity reaches 68.5 A / W at room temperature, which is much higher than that of the photodetector based on oxygen-terminated bulk single-crystal diamond.

[0026] (4) Excellent high-temperature ultraviolet detection ability. As the working temperature increases, the responsivity of the device not only does not decrease but increases instead, reaching >3000 A / W at 275 °C, and maintaining a stable response to deep ultraviolet light at different temperatures.

[0027] (5) The nanowires prepared by the present invention maintain a high-quality single-crystal morphology, and the prepared device has excellent performance, maintaining good spectral selectivity at both room temperature and high temperature, meeting the requirements of solar-blind ultraviolet detection at different temperatures.

[0028] In summary, the single-crystalline diamond nanowire material embedded with noble metal nanoparticles provided by the method of the present invention meets the application requirements for solar-blind ultraviolet detection in high-temperature and harsh environments, and demonstrates broad application prospects in the fields of aerospace, industrial monitoring, and military. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 FIG. is a flowchart for the preparation of single-crystalline diamond nanowires embedded with platinum nanoparticles, where: (a) transfer of original diamond nanowires; (b) evaporation of platinum thin film; (c) dewetting of platinum thin film to form nanoparticles; (d) homoepitaxial growth to coat platinum nanoparticles. In the figure, 1, original diamond nanowires; 2, diamond nanowires coated with platinum thin film; 3, platinum nanoparticles; 4, single-crystalline diamond nanowires embedded with platinum nanoparticles; 5, Si / SiO2 substrate.

[0030] Figure 2 FIG. are the transmission electron microscope image (a) and energy-dispersive X-ray spectroscopy (b) of single-crystalline diamond nanowires embedded with platinum nanoparticles. In FIG. (b), the abscissa Energy is energy (keV), and the ordinate Intensity is relative intensity (Counts).

[0031] Figure 3 FIG. are a schematic diagram (a) of a deep ultraviolet detector based on single-crystalline diamond nanowires embedded with platinum nanoparticles and the dynamic light response diagram (b) of the device to 220 nm deep ultraviolet light at different temperatures in the range of 25 - 275 °C. In FIG. (b), the abscissa Time is time (s), and the ordinate Current is current (A). DETAILED DESCRIPTION OF THE EMBODIMENTS

[0032] In the specific implementation process, the present invention provides a method for preparing a high-temperature solar-blind ultraviolet photodetector based on single-crystalline diamond nanowires embedded with noble metal nanoparticles. First, transfer the single-crystalline diamond nanowires to the surface of an insulating substrate of Si / SiO2 (a layer of silicon dioxide is deposited on the silicon surface), then deposit a noble metal thin film on the diamond surface through an electron beam evaporation device, and then use a microwave plasma chemical vapor deposition device (MPCVD) to dewet and agglomerate the noble metal thin film to form nanoparticles, and then perform homoepitaxial growth on the diamond nanowires. Finally, prepare electrodes at both ends of the diamond nanowires through a standard lithography process to form a high-temperature deep ultraviolet photodetection device.

[0033] The present invention will be further described below in conjunction with embodiments, but the protection scope of the present invention is not limited thereto:

[0034] Example 1:

[0035] In this example, the method for preparing a solar-blind ultraviolet photodetector based on single-crystalline diamond nanowires embedded with platinum nanoparticles is as follows:

[0036] (1) The prepared single-crystal diamond nanowires with a length of about 16 μm and a width of about 200 nm were dispersed in an isopropanol solution and ultrasonicated for 1 min to form a diamond nanowire suspension. Two drops (about 50 μL) of the suspension were dropped on the surface of a 1.2×1.2 cm Si / SiO2 substrate 5, and the suspension was spun dry using a spin coater at a rotation speed of 600 rad / min. The original diamond nanowires 1 were uniformly dispersed on the surface of the Si / SiO2 substrate 5, as Figure 1 shown in a.

[0037] (2) One or more substrates containing the original single-crystal diamond nanowires were placed in an electron beam evaporation device, and a platinum thin film with a thickness of 3 nm was deposited. The surface of the nanowires was uniformly covered with the platinum thin film to form platinum-coated diamond nanowires 2, as Figure 1 shown in b.

[0038] (3) One or more substrates containing the platinum-coated single-crystal diamond nanowires were placed in a 915 MHz microwave plasma chemical vapor deposition device. The flow rate of hydrogen was 380 sccm, and the microwave power and working pressure were set to 7 kW and 50 mbar. Annealing treatment was carried out in a pure hydrogen plasma atmosphere at a treatment temperature of 700 °C for 15 min, so that the platinum thin film was heated to remove moisture and form uniformly distributed platinum nanoparticles 3. The size of the platinum nanoparticles 3 was between 10 and 30 nm, as Figure 1 shown in c.

[0039] (4) Continuing the homoepitaxial growth of single-crystal diamond nanowires in the microwave plasma chemical vapor deposition device at a temperature of 800 °C for 30 min, while keeping the hydrogen flow rate unchanged, introducing methane gas with a flow rate of 4 sccm, and setting the microwave power and pressure to 6 kW and 50 mbar, so that the platinum nanoparticles were coated with the grown single-crystal diamond epitaxial layer to form single-crystal diamond nanowires 4 embedded with platinum nanoparticles, as Figure 1 shown in d. Figure 2 a shows the transmission electron microscopy image of this structure, and it can be seen that the platinum nanoparticles are distributed in a banded pattern within the single-crystal diamond nanowires. Figure 2 b shows the energy-dispersive X-ray spectroscopy of this structure, where the carbon element signal comes from diamond and the platinum element signal comes from the embedded platinum nanoparticles.

[0040] (5) Using a standard lithography process, titanium / gold electrodes with a spacing of 12 μm and a thickness of 120 nm / 30 nm are deposited at both ends of the diamond nanowires embedded with platinum nanoparticles. Subsequently, it is treated at 600 °C for 20 min in an Ar / H2 (volume ratio of 1:1) protective gas to form an ohmic contact between the titanium / gold electrodes and the diamond nanowires. Finally, the photodetector is treated with oxygen plasma to complete the preparation of the oxygen-terminated diamond nanowires embedded with platinum nanoparticles device. As Figure 3 shown in Fig. a, the deep ultraviolet detector mainly includes: a Si / SiO2 substrate, single-crystal diamond nanowires embedded with platinum nanoparticles, and titanium / gold electrodes. The two electrodes are deposited in parallel on both ends of the single-crystal diamond nanowires embedded with platinum nanoparticles on the surface of the quartz substrate and are connected. As Figure 3 shown in Fig. b, the device is heated from room temperature to 275 °C, and the device stably responds to deep ultraviolet light at 220 nm at different temperatures.

[0041] Example 2:

[0042] In this example, the preparation method of a solar-blind ultraviolet photodetector based on single-crystal diamond nanowires embedded with palladium nanoparticles is as follows:

[0043] (1) The prepared single-crystal diamond nanowires with a length of about 16 μm and a width of about 200 nm are dispersed in an isopropanol solution and sonicated for 2 min to form a diamond nanowire suspension. Take 2 drops (about 50 μL) of the suspension and drop it on the surface of a 1.2 × 1.2 cm Si / SiO2 substrate. Use a spin coater to spin-dry the suspension at a rotation speed of 900 rad / min, and the diamond nanowires are uniformly dispersed on the surface of the Si / SiO2 substrate.

[0044] (2) One or more substrates containing the original single-crystal diamond nanowires are placed in an electron beam evaporation device, and a palladium thin film with a thickness of 2 nm is deposited, and the surface of the nanowires is uniformly covered with the palladium thin film.

[0045] (3) One or more substrates containing single-crystal diamond nanowires covered with a palladium thin film are placed in a 915 MHz microwave plasma chemical vapor deposition device. The flow rate of hydrogen is 420 sccm, and the microwave power and working pressure are set to 6 kW and 40 mbar. Annealing treatment is carried out in a pure hydrogen plasma atmosphere. The treatment temperature is 600 °C, and the treatment time is 20 min, so that the palladium thin film is heated to remove moisture and form uniformly distributed palladium nanoparticles, and the size of the palladium nanoparticles is between 20 and 40 nm.

[0046] (4) Continue the homoepitaxial growth of single-crystal diamond nanowires in a microwave plasma chemical vapor deposition equipment at a temperature of 700 °C for a growth time of 60 min. Keep the hydrogen flow rate constant and introduce methane gas at a flow rate of 5 sccm. Set the microwave power and gas pressure to 7 kW and 60 mbar, respectively, so that the palladium nanoparticles are coated by the grown single-crystal diamond epitaxial layer, forming single-crystal diamond nanowires embedded with palladium nanoparticles.

[0047] (5) Use the standard photolithography process to deposit titanium / platinum / gold electrodes with a spacing of 12 microns and a thickness of 120 nm / 30 nm / 30 nm at both ends of the diamond nanowires embedded with palladium nanoparticles. Subsequently, treat them in an Ar / H2 protective gas (volume ratio of 1:1) at 700 °C for 10 min to form an ohmic contact between the titanium / platinum / gold electrodes and the diamond nanowires. Finally, perform oxygen plasma treatment on the photodetector to complete the preparation of the oxygen-terminated diamond nanowire device embedded with palladium nanoparticles.

[0048] The implementation results show that in the present invention, noble metal thin films such as platinum or palladium are deposited on the surface of single-crystal diamond nanowires, and annealing treatment is carried out in a microwave plasma chemical vapor deposition equipment to thermally desorb the noble metal thin films to form nanoparticles. Subsequently, homoepitaxial growth of single-crystal diamond nanowires is performed to embed the noble metal nanoparticles into the diamond nanowires. The prepared high-temperature solar-blind ultraviolet photodetector has a responsivity to 220 nm deep ultraviolet light at room temperature that is three orders of magnitude higher than that of bulk oxygen-terminated diamond. Moreover, the responsivity reaches >3000 A / W at a high temperature of 275 °C, possessing excellent optical response performance and high-temperature stability. This detector is suitable for deep ultraviolet light detection in extreme environments such as aerospace, industrial monitoring, and military applications.

Claims

1. A preparation method of a high-temperature solar-blind ultraviolet photodetector based on single-crystalline diamond nanowires embedded with noble metal nanoparticles, characterized in that, First, transfer single-crystal diamond nanowires to the surface of a substrate insulated by Si / SiO2 through spin coating. Then, deposit a noble metal thin film on the diamond surface using an electron beam evaporation device. Next, utilize a microwave plasma chemical vapor deposition device to dewet and agglomerate the noble metal thin film to form nanoparticles. Continuously, perform homoepitaxial growth of single-crystal diamond nanowires in the microwave plasma chemical vapor deposition device to coat the noble metal nanoparticles. Finally, prepare electrodes at both ends of the single-crystal diamond nanowires through a standard photolithography process to form a device.

2. The preparation method according to claim 1, wherein This method includes the following steps: a. Transfer of single-crystal diamond nanowires: Disperse the prepared single-crystal diamond nanowires in an isopropanol solution and ultrasonicate for 30 s to 2 min to form a suspension of single-crystal diamond nanowires. Take 1 to 2 drops of the suspension and drop them on the surface of a Si / SiO2 substrate. Use a spin coater to spin-dry the suspension at a rotational speed of 300 to 1200 rad / min, and the single-crystal diamond nanowires are uniformly dispersed on the surface of the Si / SiO2 substrate. b. Deposition of noble metal thin film: Place the Si / SiO2 substrate containing single-crystal diamond nanowires in step a in an electron beam evaporation device and deposit a noble metal thin film with a thickness of 2 to 4 nm on the surface of the single-crystal diamond nanowires. c. Homoepitaxial growth of single-crystal diamond nanowires: Place the single-crystal diamond nanowires deposited with a noble metal thin film in step b in a 915 MHz microwave plasma chemical vapor deposition device. The flow rate of hydrogen is 350 to 450 sccm, and the microwave power and working pressure are set to 5 to 8 kW and 40 to 60 mbar. Perform annealing treatment in a pure hydrogen plasma atmosphere to heat the noble metal thin film to dewet and form uniformly distributed noble metal nanoparticles. Continuously, perform homoepitaxial growth of single-crystal diamond nanowires in the microwave plasma chemical vapor deposition device. The flow rates of hydrogen and methane are 350 to 450 sccm and 2 to 6 sccm respectively, and the microwave power and working pressure are set to 5 to 8 kW and 40 to 60 mbar to coat the noble metal nanoparticles with the grown single-crystal diamond epitaxial layer, forming single-crystal diamond nanowires embedded with noble metal nanoparticles. d. Preparation of a solar-blind ultraviolet photodetector: Through a standard photolithography process, deposit metal electrodes with a spacing of 5 to 12 μm and a thickness of 100 to 150 nm at both ends of the single-crystal diamond nanowires. Then, place the device in a tube furnace, introduce a protective gas atmosphere, and treat it at 500 to 700 °C for 10 to 30 min to form an ohmic contact between the metal electrodes and the single-crystal diamond nanowires. Then, use an oxygen plasma cleaning device to treat the device for 10 to 20 min to form a stable oxygen termination on the surface of the single-crystal diamond nanowires.

3. The preparation method according to claim 2, characterized in that, In step b, when depositing a noble metal thin film on the surface of the single-crystal diamond nanowires, the noble metal selected is platinum or palladium.

4. The preparation method according to claim 2, characterized in that, In step c, when performing the dewetting treatment of the noble metal thin film, the treatment temperature is 600 to 800 °C, the treatment time is 10 to 20 min, and the size of the formed noble metal nanoparticles is between 5 and 50 nm.

5. The preparation method according to claim 2, characterized in that, In step c, the temperature for homoepitaxial growth of single-crystal diamond nanowires is 700 - 850 °C, and the growth time is 20 - 60 min.

6. The preparation method according to claim 2, characterized in that, In a microwave plasma chemical vapor deposition apparatus, the dewetting of noble metal nanoparticles and the homoepitaxial growth of single-crystal diamond nanowires were continuously achieved.

7. The preparation method according to claim 2, characterized in that, In step d, the protective gas atmosphere is an Ar / H2 mixed gas or pure Ar gas.

8. The preparation method according to claim 2, characterized in that, In step d, the metal electrode material is titanium, gold, and platinum respectively to form a multi-layer structure electrode of titanium / gold or titanium / platinum / gold.

9. The preparation method according to any one of claims 1 to 8, characterized in that, The high-temperature solar-blind ultraviolet photodetector includes: single-crystal diamond nanowires embedded with platinum nanoparticles and metal electrodes. The two metal electrodes are deposited in parallel at both ends of the single-crystal diamond nanowires embedded with platinum nanoparticles. The metal electrodes form a carbide interface layer by annealing in a protective gas atmosphere to achieve ohmic contact with the single-crystal diamond nanowires.

10. The preparation method according to claim 1, wherein The single-crystal diamond nanowires are replaced with a bulk single-crystal diamond substrate.

Images